CN113035790A - Welding base and power semiconductor module - Google Patents

Welding base and power semiconductor module Download PDF

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Publication number
CN113035790A
CN113035790A CN201911347198.XA CN201911347198A CN113035790A CN 113035790 A CN113035790 A CN 113035790A CN 201911347198 A CN201911347198 A CN 201911347198A CN 113035790 A CN113035790 A CN 113035790A
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China
Prior art keywords
welding
power semiconductor
welding base
semiconductor module
annular flange
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Application number
CN201911347198.XA
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Chinese (zh)
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CN113035790B (en
Inventor
时海定
彭勇殿
常桂钦
邹淅
赵凯
方杰
吴义伯
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Zhuzhou CRRC Times Semiconductor Co Ltd
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Zhuzhou CRRC Times Semiconductor Co Ltd
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Priority to CN201911347198.XA priority Critical patent/CN113035790B/en
Publication of CN113035790A publication Critical patent/CN113035790A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Abstract

The application provides a welding base and a power semiconductor module, and relates to the technical field of power module manufacturing. The welding base comprises a tubular main body, wherein a first end and a second end of the main body are respectively provided with a first annular flange and a second annular flange which extend outwards perpendicular to the outer wall of the main body, and the welding base is characterized in that an annular boss is arranged on the surface, away from the main body, of at least one of the first annular flange and the second annular flange. The end face of the welding base is provided with the annular boss, so that the area of a welding joint surface of the welding base and the copper coating on the lining plate is increased, and the welding base is prevented from falling off. The power semiconductor module comprises the welding base.

Description

Welding base and power semiconductor module
Technical Field
The invention relates to the technical field of power module manufacturing, in particular to a welding base and a power semiconductor module.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a fully-controlled power semiconductor device, and an auxiliary signal pin can be connected to an IGBT power semiconductor module and a driving circuit board on an upper layer of the IGBT power semiconductor module to implement Gate driving control or detection protection, so that the power semiconductor module is usually provided with the auxiliary signal pin. Currently, a large number of mounting methods of the integrated package are used, and the auxiliary signal pin needs to be embedded in the side frame 10 of the power semiconductor module shown in fig. 1, so that the copper-clad layer of the auxiliary control electrode of the power semiconductor module needs to extend to the side frame 10 and needs to be connected by using a bonding wire. The copper-clad layer occupies the effective utilization area of the lining plate, so that the power density of the power semiconductor module is difficult to be improved to the maximum extent. Meanwhile, the bonding wire has low vibration tolerance and is easy to break when vibrating, so that the power semiconductor module cannot be applied to high-vibration environments such as an electric drive controller of a three-in-one or all-in-one vehicle.
In order to maximize the power density of the power semiconductor module and reduce the area of the copper clad layer, the soldering base 20 is widely focused and used, as shown in fig. 2, the soldering base 20 has an i-shaped structure, and the square auxiliary signal pin is in interference fit with the inner wall of the soldering base 20, thereby connecting the auxiliary signal pin and the backing plate. However, since the end of the soldering base 20 has a planar structure, it is difficult to form a sufficient bonding surface with the solder during soldering, and therefore the soldering effect is poor and the soldering is liable to fall off.
Disclosure of Invention
To solve the above problems in the prior art, the present application provides a soldering base and a power semiconductor module. The end face of the welding base is provided with the annular boss, so that the area of a welding joint surface of the welding base and the copper coating on the lining plate is increased, and the welding base is prevented from falling off.
In a first aspect, the present invention provides a welding base comprising a tubular main body, a first annular flange and a second annular flange extending outwardly perpendicular to an outer wall of the main body are respectively provided at a first end and a second end of the main body, and an annular boss is provided on a flange surface of at least one of the first annular flange and the second annular flange, the flange surface being remote from the main body. By utilizing the welding base, the welding joint surface area of the copper coating on the welding base and the lining plate can be increased, the welding strength is improved, and the welding base is prevented from falling off.
In one embodiment of the first aspect, the junction of the inner wall of the body and the annular boss is provided with a radius. Through this embodiment, be favorable to the solder to upwards pile up along the surperficial of radius gradually to be favorable to the solder to flow into the inboard of cyclic annular boss, increase welding base and the bonding surface area of the copper layer that coats on the welt, improved welding strength, be favorable to avoiding droing of welding base.
In one embodiment of the first aspect, the radius of the radius is between 0.1 and 0.5 mm. By the embodiment, a large enough accommodating space can be provided for the solder, the area of a welding joint surface of the welding base and the copper coating layer on the lining plate can be increased, and the welding strength is improved; the stability of the welding base can be kept, and the welding base is prevented from shaking in the welding process or inclining after welding.
In an embodiment of the first aspect, the soldering mount is made of copper or a copper alloy. By this embodiment, a facility is provided for the selection of solder.
In one embodiment of the first aspect, the inner wall of the body has a nickel plating; the flange surface has a silver, tin or gold plating. By the embodiment, the nickel plating layer can play a role of solder resistance, and solder is prevented from being accumulated to the inner wall of the main body from the rounding part; the solder is easy to combine with the silver, tin or gold plating layer, which is beneficial to firmly fixing the welding base on the copper-coated layer through the surface of the flange.
In one embodiment of the first aspect, the height of the welding base is between 2.0 and 5.0 mm, the inner diameter of the main body is between 0.6 and 1.0 mm, the outer diameter of the first annular flange or the outer diameter of the second annular flange is between 2.5 and 4.0 mm, the height of the annular boss is between 0.05 and 0.25 mm, the distance from the annular boss to the outer edge of the annular flange is between 0.05 and 1.50 mm, and the outer diameter of the annular boss is between 1.45 and 2.50 mm.
In a second aspect, the invention also provides a power semiconductor module comprising the soldering mount. By utilizing the power semiconductor module, the annular boss is arranged on the end face of the welding base, so that the area of a welding joint surface of the welding base and the copper coating layer on the lining plate is increased, and the welding base is prevented from falling off; meanwhile, the bonding wire is prevented from being used for connecting the auxiliary signal pin and the lining plate, so that the power semiconductor module of the embodiment is suitable for high-vibration environments such as an electric drive controller of a three-in-one or all-in-one vehicle.
In one embodiment of the second aspect, the power semiconductor module includes a substrate, a backing plate, and a copper clad layer stacked in this order, and the soldering base is soldered to the copper clad layer. By means of this embodiment, it is advantageous for the power semiconductor module to be able to conduct auxiliary signals to the outside.
In one embodiment of the second aspect, the power semiconductor module further includes an auxiliary signal pin inserted into the hollow cavity of the main body, wherein the auxiliary signal pin has a circular cross-sectional shape and is in clearance fit with the hollow cavity; or the cross section of the auxiliary signal needle is square and is in interference fit with the hollow cavity. By means of this embodiment, it is advantageous for the power semiconductor module to be able to conduct auxiliary signals to the outside.
In one embodiment of the second aspect, the power semiconductor module is an insulated gate bipolar transistor module. According to the embodiment, the IGBT module adopts the welding base, and the annular boss is arranged on the end face of the welding base, so that the area of a welding joint surface of the welding base and a copper coating layer on a lining plate is increased, the welding base is prevented from falling off, the auxiliary signal needle can be better fixed, and the IGBT module can be ensured to conduct an auxiliary signal outwards; meanwhile, the bonding wire is prevented from being used for connecting the auxiliary signal pin and the lining plate, so that the IGBT module is favorable for being suitable for high-vibration environments such as an electric drive controller of a three-in-one or multi-in-one vehicle.
The application provides a welding base and power semiconductor module compares in prior art, has following beneficial effect:
1. the end face of the welding base is provided with the annular boss, so that the area of a welding joint surface of the welding base and the copper coating on the lining plate is increased, and the welding base is prevented from falling off;
2. the use of a bonding wire for connecting the auxiliary signal pin and the lining plate is avoided, so that the power semiconductor module is favorable for being suitable for high-vibration environments such as an electric drive controller of a three-in-one or all-in-one vehicle and the like;
3. the auxiliary signal pin can be better fixed, and the power semiconductor module can be ensured to conduct the auxiliary signal outwards.
The features mentioned above can be combined in various suitable ways or replaced by equivalent features as long as the object of the invention is achieved.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings, in which:
FIG. 1 shows a schematic structural view of a side frame of the prior art;
FIG. 2 shows a schematic structural diagram of a prior art welding shoe;
FIG. 3 illustrates a perspective view of a welding shoe according to an embodiment of the present invention;
FIG. 4 shows a schematic cross-sectional view of a weld mount according to an embodiment of the invention;
FIG. 5 shows a schematic cross-sectional view of a welded mount according to an embodiment of the invention;
FIG. 6 is a schematic diagram illustrating the connection of a soldering terminal with an auxiliary signal pin according to an embodiment of the present invention;
fig. 7 shows a schematic partial structural view of a power semiconductor module according to an embodiment of the invention;
fig. 8 shows a schematic cross-sectional view of a power semiconductor module according to an embodiment of the invention.
Reference numerals:
10-side frame;
20-welding the base;
100-welding a base;
110-a body;
111-hollow cavity;
120-a first annular flange;
130-a second annular flange;
140-annular boss;
150-rounding;
400-solder;
500-a tube shell;
600-a substrate;
700-lining board;
800-copper clad layer;
900-auxiliary signal pin.
In the drawings, like parts are provided with like reference numerals. The drawings are not to scale.
Detailed Description
The invention will be further explained with reference to the drawings.
As shown in fig. 3 to 8, the present embodiment provides a welding base 100. As shown in fig. 3 and 4, the welding holder 100 includes a tubular main body 110, a first end and a second end of the main body 110 are respectively provided with a first annular flange 120 and a second annular flange 130 extending outward perpendicular to an outer wall of the main body 110, and an annular boss 140 is provided on a flange surface of at least one of the first annular flange 120 and the second annular flange 130 away from the main body 110.
The annular boss 140 increases the area of the welding joint surface between the welding base 100 and the copper coating 800 on the lining plate 700, improves the welding strength, and is beneficial to avoiding the falling off of the welding base 100.
Since the annular boss 140 protrudes from the annular flange, an annular recess is formed outside the annular boss 140. In the welding process, the liquid solder 400 can fill the annular concave part, so that the area of the joint surface of the solder 400 and the welding base 100 is increased, the welding strength is improved, and the welding base 100 is prevented from falling off. After the soldering process is completed, as shown in fig. 5, the solder 400 is distributed in the annular recess outside the annular boss 140, and is bonded to the outer wall of the annular boss 140 and the bottom surface of the annular recess.
Because only one end of the welding base 100 needs to be welded and connected with the copper coating 800 on the lining plate 700, at least one of the first annular flange 120 and the second annular flange 130 needs to be provided with the annular boss 140, and the welding base 100 is welded and connected with the copper coating 800 on the lining plate 700 by using the annular flange provided with the annular boss 140, so that the welding joint surface area of the copper coating 800 on the welding base 100 and the lining plate 700 is increased, the welding strength is improved, and the welding base 100 is prevented from falling off.
When only one end of the welding base 100 is provided with the annular boss 140, and the end face of the other end is of a planar structure, the planar end face is easier to process, which is beneficial to reducing the production cost of the welding base 100. However, during welding, the worker is required to select and identify the two end faces of the welding base 100 and weld the two end faces to the copper clad layer 800 of the backing plate 700 using the annular flange having the annular boss 140.
When the annular bosses 140 are disposed at both ends of the welding base 100, a worker can use any end of the welding base 100 to be welded with the copper clad layer 800 on the lining plate 700, and does not need to select and distinguish two end faces of the welding base 100, which is beneficial to improving the working efficiency and avoiding mistakenly using the end face of the planar structure to be welded with the copper clad layer 800 on the lining plate 700.
In the embodiment, the annular boss 140 is disposed on the end face of the welding base 100, so that the area of the welding joint surface between the welding base 100 and the copper coating 800 on the lining plate 700 is increased, the welding strength is improved, and the welding base 100 is prevented from falling off.
As shown in fig. 4, optionally, the junction of the inner wall of the body 110 and the annular boss 140 of the present embodiment is provided with a radius 150.
When the copper layer 800 is coated on the welding base 100 and the lining plate 700 in welded connection, the arrangement of the radius 150 is beneficial to the gradual upward accumulation of the solder 400 along the surface of the radius 150, so that the solder 400 flows into the inner side of the annular boss 140, the welding joint surface area of the copper layer 800 coated on the welding base 100 and the lining plate 700 is increased, the welding strength is improved, and the falling-off of the welding base 100 is avoided. After the soldering process is completed, as shown in fig. 5, the solder 400 is distributed inside the annular boss 140, and the surface of the radius 150 is covered with the solder 400.
The end of the auxiliary signal pin 900, which is far away from the copper-clad layer 800 from the soldering base 100, is inserted into the hollow cavity 111 of the main body 110, and the end is provided with the radius 150, so that the auxiliary signal pin 900 can be prevented from being scratched, and the auxiliary signal pin 900 can be guided to smoothly enter the hollow cavity 111 of the main body 110.
Optionally, the radius of the radius 150 of the present embodiment is between 0.1 and 0.5 millimeters.
The radius of the radius 150 is too small to provide a sufficient receiving space for the solder 400, and it is not beneficial to increase the area of the bonding surface between the soldering base 100 and the copper-clad layer 800 on the substrate 700, and therefore it is not beneficial to increase the soldering strength, and it may cause the soldering base 100 to fall off from the surface of the copper-clad layer 800 on the substrate 700.
The radius of the radius 150 is too large, which may result in the area of the end surface of the annular boss 140 being too small, and during the welding process, it is not favorable for maintaining the stability of the welding base 100, and is not favorable for the welding connection between the annular boss 140 and the copper coating 800 on the lining board 700, and may result in the welding base 100 shaking during the welding process or inclining after the welding process, which is not favorable for the fixation of the welding base 100.
Thus, the radius of the chamfer is set between 0.1 and 0.5 mm: a large enough accommodating space is provided for the solder 400, which is beneficial to increasing the welding joint surface area of the welding base 100 and the copper coating layer 800 on the lining plate 700 and improving the welding strength; the stability of the welding base 100 can be maintained, which is beneficial to avoiding the welding base from shaking in the welding process or inclining after welding.
Alternatively, the soldering base 100 of the present embodiment is made of copper or a copper alloy. Because the welding base 100 needs to be fixed on the copper-clad layer 800, the welding base 100 made of copper or copper alloy is connected with the copper-clad layer 800 made of copper in a welding mode, the welding firmness is improved, and because the welding flux 400 only needs to be matched with the copper, convenience is brought to material selection of the welding flux 400.
Alternatively, the inner wall of the body 110 of the present embodiment has a nickel plating layer; the flange surface has a silver, tin or gold plating.
Because the solder 400 is not easy to combine with the nickel plating layer, the solder 400 can be prevented from being accumulated to the inner wall of the main body 110 from the rounding 150 to play a role of resistance welding, so that the solder 400 is limited at the rounding 150 and is gathered at the rounding 150 to form a firmer welding surface, the welding strength is favorably improved, and the falling-off of the welding base 100 is favorably avoided.
The surface of the flange has a silver, tin or gold plating layer, which facilitates the solder 400 to be easily combined with the silver, tin or gold plating layer, thereby firmly fixing the soldering base 100 to the copper-clad layer 800.
Alternatively, the height of the welding base 100 of the present embodiment is between 2.0 and 5.0 mm, the inner diameter of the main body 110 is between 0.6 and 1.0 mm, the outer diameter of the first annular flange 120 or the outer diameter of the second annular flange 130 is between 2.5 and 4.0 mm, the height of the annular boss 140 is between 0.05 and 0.25 mm, the distance from the annular boss 140 to the outer edge of the annular flange is between 0.05 and 1.50 mm, and the outer diameter of the annular boss 140 is between 1.45 and 2.50 mm.
The height of the soldering base 100 mainly depends on the height of the auxiliary signal pin 900, and it is necessary to ensure that the auxiliary signal pin 900 does not shake. The inner diameter of the main body 110 of the soldering base 100 is mainly adapted to the sectional size of the auxiliary signal pin 900, and thus depends on the sectional size of the auxiliary signal pin 900. The outer diameter of the first annular flange 120 or the outer diameter of the second annular flange 130 depends mainly on the height of the welding base 100, the greater the outer diameter of the first annular flange 120 or the outer diameter of the second annular flange 130 in order to guarantee the stability of the welding base 100.
The height of the annular boss is too large, so that the solder 400 cannot be sufficiently bonded to the bottom surface of the annular recess formed outside the annular boss 140, the bonding surface area between the solder 400 and the soldering base 100 is reduced, and the dropping of the soldering base 100 is not favorably avoided. The height of the annular projection 140 is too small to provide a large enough space for the solder 400, and it is not beneficial to increase the area of the bonding surface between the soldering base 100 and the copper coating 800 on the substrate 700. Therefore, the height of the annular boss 140 is between 0.05 and 0.25 mm, which can ensure that the solder 400 is fully combined with the bottom surface of the annular recess, and also can provide a large enough accommodating space for the solder 400, thereby increasing the welding combination surface area of the welding base 100 and the copper layer 800 covering the lining board 700, and being beneficial to avoiding the falling-off of the welding base 100.
The distance from the annular boss 140 to the outer edge of the annular flange is between 0.05 and 1.50 mm, the outer diameter of the annular boss 140 is between 1.45 and 2.50 mm, and the outer diameter of the annular flange is between 2.5 and 4.0 mm, which is beneficial for providing a large enough accommodating space for the solder 400 located outside the annular boss 140.
As shown in fig. 7 and 8, the present embodiment also provides a power semiconductor module including the above-described soldering base 100.
Because the power semiconductor module adopts the welding base 100, the annular boss 140 is arranged on the end face of the welding base 100, so that the area of the welding joint surface of the welding base 100 and the copper coating 800 on the lining plate 700 is increased, and the welding base 100 is prevented from falling off.
The bonding wire has low vibration tolerance and is easy to break when vibrating, so that the power semiconductor module adopting the bonding wire to connect the auxiliary signal pin 900 and the lining plate 700 cannot be suitable for high-vibration environments such as an electric drive controller of a three-in-one or all-in-one vehicle. Since the auxiliary signal pin 900 and the substrate 700 are connected by the soldering base 100 in the present embodiment, the bonding wire is not used to connect the auxiliary signal pin 900 and the substrate 700, so that the power semiconductor module of the present embodiment is suitable for high vibration environments such as an electric driving controller of a three-in-one or multi-in-one vehicle.
As shown in fig. 8, the power semiconductor module of the present embodiment may optionally include a substrate 600, a backing plate 700, and a copper clad layer 800 stacked in this order, and the soldering base 100 is soldered to the copper clad layer 800.
The substrate 600 may be made of, but not limited to, copper or aluminum silicon carbide (AlSiC). Alternatively, the backing plate 700 is a ceramic backing plate 700, which may be made of, but not limited to, an insulating ceramic such as alumina, aluminum nitride, or silicon nitride. Alternatively, a chip may be soldered on the backing plate 700, and the chip may be an Insulated Gate Bipolar Transistor (IGBT) chip.
The soldering base 100 is soldered to the copper-clad layer 800, thereby connecting the auxiliary signal pin 900 and the backing plate 700, so that the power semiconductor module can conduct an auxiliary signal to the outside.
Since the soldering mount 100 can be disposed at any position of the copper-clad layer 800 on the substrate 700 without being limited by the structure of the side frame, the soldering mount 100 can be installed in the middle of the parallel IGBT chips, thereby improving the parallel current sharing characteristics of the IGBT chips.
As shown in fig. 6 to 8, optionally, the power semiconductor module of this embodiment further includes an auxiliary signal pin 900 inserted into the hollow cavity 111 of the main body 110, wherein the cross-sectional shape of the auxiliary signal pin 900 is circular and is in clearance fit with the hollow cavity 111; alternatively, as shown in fig. 6, the cross-sectional shape of the auxiliary signal pin 900 is a square, which is interference-fitted with the hollow cavity 111.
When the auxiliary signal pin 900 is clearance-fitted into the hollow cavity 111, it is necessary to solder-connect the auxiliary signal pin 900 and the solder mount 100 so that the power semiconductor module can conduct the auxiliary signal to the outside.
The auxiliary signal pin 900 may be, but is not limited to, made of copper or copper alloy and have a surface plating of nickel, tin, or gold. The solder 400 is not easily combined with the nickel plating layer, a solder mask area can be formed on the surface of the auxiliary signal pin 900, the tin or gold surface plating layer is easily combined with the solder 400, and an easily-soldered area can be formed on the surface of the auxiliary signal pin 900.
As shown in fig. 8, the height of the auxiliary signal pin 900 is higher than the height of the package 500 of the power semiconductor module, so that the auxiliary signal pin 900 penetrates through the package 500 to be connected with the driving circuit board on the upper layer of the power semiconductor module, thereby smoothly conducting the auxiliary signal to the outside.
Alternatively, the auxiliary signal pin 900 may be connected to the driving circuit board on the upper layer of the power semiconductor module by using a press-fit (press-fit) or soldering connection method.
Optionally, the power semiconductor module of this embodiment is an insulated gate bipolar transistor module.
Because the IGBT module adopts the above-mentioned welding base 100, the end face of this welding base 100 is provided with the annular boss 140 to increase the welding faying face area of the copper layer 800 on welding base 100 and welt 700, be favorable to avoiding the coming off of welding base 100, can fix the auxiliary signal needle 900 better, ensure that the IGBT module can outwards conduct the auxiliary signal.
The bonding wire has low vibration tolerance and is easy to break when vibrating, so that the IGBT module adopting the bonding wire to connect the auxiliary signal pin 900 and the lining plate 700 cannot be suitable for high-vibration environments such as an electric drive controller of a three-in-one or multi-in-one vehicle. Because the welding base 100 is adopted to connect the auxiliary signal pin 900 and the lining board 700, the bonding wire is not used to connect the auxiliary signal pin 900 and the lining board 700, and therefore the IGBT module of the embodiment is suitable for high-vibration environments such as an electric driving controller of a three-in-one or multi-in-one vehicle.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "bottom", "top", "front", "rear", "inner", "outer", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.

Claims (10)

1. A welding base comprising a tubular body, a first end and a second end of the body being provided with a first annular flange and a second annular flange respectively extending outwardly perpendicular to an outer wall of the body, characterised in that an annular boss is provided on a flange surface of at least one of the first annular flange and the second annular flange remote from the body.
2. The welding shoe of claim 1, wherein a junction of the inner wall of the body and the annular boss is provided with a radius.
3. The welding shoe of claim 2, wherein the radius of the radius is between 0.1 and 0.5 millimeters.
4. The welding shoe of claim 1, wherein the welding shoe is made of copper or a copper alloy.
5. The welding shoe of claim 1, wherein an inner wall of the body has a nickel plating; the flange surface has a silver, tin or gold plating.
6. The welding shoe of claim 1, wherein the height of the welding shoe is between 2.0 and 5.0 millimeters, the inner diameter of the body is between 0.6 and 1.0 millimeters, the outer diameter of the first annular flange or the outer diameter of the second annular flange is between 2.5 and 4.0 millimeters, the height of the annular boss is between 0.05 and 0.25 millimeters, the distance from the annular boss to the outer edge of the annular flange is between 0.05 and 1.50 millimeters, and the outer diameter of the annular boss is between 1.45 and 2.50 millimeters.
7. A power semiconductor module, characterized in that it comprises a soldering foot according to any one of claims 1 to 6.
8. The power semiconductor module of claim 7, comprising a substrate, a backing plate and a copper-clad layer stacked in sequence, wherein the welding base is welded to the copper-clad layer.
9. The power semiconductor module of claim 7, further comprising an auxiliary signal pin inserted in a hollow cavity of said main body, wherein,
the section of the auxiliary signal needle is circular and is in clearance fit with the hollow cavity; or,
the cross section of the auxiliary signal needle is square and is in interference fit with the hollow cavity.
10. The power semiconductor module according to any of claims 7-9, characterized in that the power semiconductor module is an insulated gate bipolar transistor module.
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