CN113035679A - Plasma processing device - Google Patents
Plasma processing device Download PDFInfo
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- CN113035679A CN113035679A CN201911346160.0A CN201911346160A CN113035679A CN 113035679 A CN113035679 A CN 113035679A CN 201911346160 A CN201911346160 A CN 201911346160A CN 113035679 A CN113035679 A CN 113035679A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32486—Means for reducing recombination coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
Abstract
The invention discloses a plasma processing device, comprising: the device comprises a vacuum reaction cavity, a first electrode, a second electrode, a third electrode, a fourth electrode, a fifth electrode and a sixth electrode, wherein the vacuum reaction cavity is internally provided with the upper electrode and the lower electrode which are oppositely arranged; a spacer ring surrounding the upper electrode; the radio frequency shielding piece is arranged on the outer side of the isolating ring in a surrounding mode and is connected with the isolating ring; the heating bodies are positioned in the radio frequency shielding piece; the plurality of vacuum electrodes are respectively connected with the heating body; one end of the corrugated pipes is connected with the radio frequency shielding piece, and the other end of the corrugated pipes is connected with the top of the reaction cavity. The advantages are that: the isolating ring, the radio frequency shielding piece, the heating body and other parts are combined, so that the isolating ring is always in a high-temperature state in the technical process, the isolating ring is prevented from being polluted by a polymer, meanwhile, the high-temperature isolating ring can improve the etching rate of the outer edge area of the wafer by means of high-temperature radiation, the etching rate of the wafer cannot be influenced by the temperature of the isolating ring, and the uniformity of wafer etching is guaranteed.
Description
Technical Field
The invention relates to the field of plasma etching, in particular to a plasma processing device.
Background
In the field of semiconductor manufacturing, plasma etching techniques are commonly used to etch, deposit, sputter, etc., wafers (substrates). Generally, a capacitive coupling type plasma processing apparatus and an inductive coupling type plasma processing apparatus are mainly used as a plasma processing apparatus that operates by a high-frequency discharge method. The capacitively-coupled plasma processing apparatus is generally provided with an upper electrode and a lower electrode which are opposed to each other, and the two electrodes are usually arranged in parallel. In the working process, a wafer to be processed is placed on the lower electrode, a high-frequency power supply for generating plasma is applied to the upper electrode or the lower electrode through the integrator, external electrons of reaction gas are accelerated through a high-frequency electric field generated by the high-frequency power supply, and a plasma environment is formed between the upper electrode and the lower electrode, so that plasma etching or deposition processing is carried out on the wafer.
In a capacitively-coupled plasma processing apparatus, a separating ring is generally provided, which surrounds the upper electrode and is exposed to the plasma environment. The isolation ring is arranged at the periphery of the wafer processing environment and used for isolating plasma so as to prevent the plasma from polluting and damaging the cavity of the vacuum reaction cavity. At present, the isolating ring used in the plasma processing device is generally made of quartz material, and the isolating ring is not contacted with high-temperature parts in the reaction chamber and is positioned at the periphery of the wafer. In the process of plasma treatment of a semiconductor substrate, because the temperature of the isolating ring is low, gas byproducts (mostly polymers) generated in the process are easy to accumulate on the isolating ring when meeting the low temperature of the isolating ring, so that the isolating ring can be corroded, deposited or eroded, and the service life of the isolating ring is further reduced; in addition, the low temperature at the isolation ring also affects the etching rate of the wafer near the outer edge area, and affects the uniformity of wafer etching.
Disclosure of Invention
The invention aims to provide a plasma processing device, which combines components such as an isolating ring, a radio frequency shielding piece, a heating body and the like, ensures that the isolating ring can be always in a high-temperature state in the wafer processing process, prevents the isolating ring from being polluted by polymer deposition, ensures the etching rate of the outer edge area of a wafer by the high-temperature isolating ring, does not influence the etching rate of the wafer due to the temperature of the isolating ring, and ensures the uniformity of wafer etching.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a plasma processing apparatus, the apparatus comprising:
the plasma reaction device comprises a vacuum reaction cavity, a plasma reaction cavity and a plasma reaction cavity, wherein an upper electrode and a lower electrode are arranged in the vacuum reaction cavity, the upper electrode and the lower electrode are oppositely arranged, and a plasma environment is arranged between the upper electrode and the lower electrode;
an isolation ring surrounding the upper electrode and exposed to a plasma environment;
the radio frequency shielding piece is arranged on the outer side of the isolating ring in a surrounding mode and is connected with the isolating ring;
the heating bodies are positioned in the radio frequency shielding piece and used for heating the isolating ring;
the vacuum electrodes are respectively connected with the corresponding heating bodies and supply power to the heating bodies;
one end of the corrugated pipes is connected with the radio frequency shielding piece, and the other end of the corrugated pipes is connected with the top of the reaction cavity.
Optionally, one side of the isolation ring away from the upper electrode is a step-like structure, which includes:
the upper end part is arranged at the outer side of the upper electrode in a surrounding way;
the lower end part is positioned below the upper end part and is obtained by outward diffusion of the upper end part from top to bottom, and a transition part is arranged between the upper end part and the lower end part.
Optionally, the radio frequency shield includes:
the first radio frequency shielding piece is matched with the step-shaped structure on the outer side of the isolating ring, a plurality of grooves are formed in the first radio frequency shielding piece in a surrounding mode, and the grooves are used for accommodating the heating body;
and the second radio frequency shielding piece is positioned on the first radio frequency shielding piece and connected with the first radio frequency shielding piece so as to wrap the heating body in the groove.
Optionally, the connection between the first rf shield, the second rf shield and the spacer ring comprises welding or connection by mechanical fastening means.
Optionally, the mechanical fastening means is a bolt assembly.
Optionally, the radio frequency shielding piece includes first metallic coating on the spacer ring surface and is located the second metallic coating on the first metallic coating, the heat-generating body is for being located the heat-generating body coating between first metallic coating and the second metallic coating, first metallic coating with set up first insulating layer between the heat-generating body coating, the second metallic coating with set up the second insulating layer between the heat-generating body coating.
Optionally, the first metal plating layer is a first aluminum coating layer, and the second metal plating layer is a second aluminum coating layer.
Optionally, the material of the heat generating body coating comprises: graphene, carbon nanotubes, nichrome.
Optionally, the material of the isolation ring comprises quartz and ceramic;
the material of the radio frequency shield comprises a metal.
Compared with the prior art, the invention has the following advantages:
(1) according to the plasma processing device, the isolation ring, the radio frequency shielding piece, the heating body and other components are combined, so that the isolation ring can be always in a high-temperature state in the wafer processing process, the isolation ring is prevented from being polluted by polymer deposition, meanwhile, the high-temperature isolation ring can also ensure the etching rate of the outer edge area of the wafer, the etching rate of the wafer cannot be influenced by the temperature of the isolation ring, and the uniformity of wafer etching is ensured;
(2) the radio frequency shielding piece of the invention constructs a metal conductor shielding electric field for the heating element, so that the heating element can work in a vacuum environment with a radio frequency electric field, and the ignition phenomenon can not occur.
Drawings
FIG. 1 is a schematic diagram of a plasma processing apparatus according to the present invention;
FIG. 2 is a schematic view of the spacer ring and RF shield of FIG. 1;
fig. 3 is a schematic view of a spacer ring and rf shield of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, in this document, the terms "comprises," "comprising," "includes," "including," "has" or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrases "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article, or terminal that comprises the element.
It is to be noted that the drawings are in a very simplified form and employ non-precise ratios for the purpose of facilitating and distinctly facilitating the description of one embodiment of the present invention.
Example one
Fig. 1 is a schematic structural diagram of a plasma processing apparatus according to the present invention, the plasma processing apparatus comprising: the vacuum reaction chamber 1001 is formed by surrounding a reaction chamber body 1011 and a chamber body end cover 1012, an upper electrode 1002 and a lower electrode 1003 are arranged in the vacuum reaction chamber 1001, the upper electrode 1002 is connected with the chamber body end cover 1012, the upper electrode 1002 and the lower electrode 1003 are oppositely arranged, and a plasma environment is formed between the upper electrode 1002 and the lower electrode 1003. An isolation ring 1005 surrounds the upper electrode 1002 and is exposed to the plasma environment, wherein the isolation ring 1005 is used to isolate the plasma generated during the process and prevent the plasma from contaminating the reaction chamber 1011.
The chamber end cap 1012 is provided with a plurality of through holes, the top of the isolating ring 1005 is connected to the beam 1009 above the chamber end cap 1012 by a plurality of connectors 1091 respectively passing through the through holes of the chamber end cap 1012, and the parts of the connectors 1091 above and below the chamber end cap 1012 (i.e. the parts of the connectors 1091 inside and outside the vacuum reaction chamber 1001) are respectively surrounded by bellows (not shown) to ensure air tightness. One end of the corrugated pipe located outside the vacuum reaction cavity 1001 is connected with the cavity end cover 1012, the other end of the corrugated pipe is connected with the cross beam 1009, one end of the corrugated pipe located inside the vacuum reaction cavity 1001 is connected with the cavity end cover 1012, and the other end of the corrugated pipe is connected with the isolating ring 1005. The cross beam 1009 is connected with a cylinder, and the cylinder can drive the cross beam 1009 to move up and down relative to the cavity end cover 1012, so as to drive the isolation ring 1005 connected with the cross beam to move up and down. Wherein the isolation ring 1005 is made of quartz or ceramic material, and the bellows is made of copper. In one embodiment, the spacer ring 1005 is connected to the beam 1009 by three connectors 1091.
In addition, as shown in fig. 1 and fig. 2, the plasma processing apparatus further includes a radio frequency shield 1007, a plurality of heating elements 1006, and a plurality of vacuum electrodes 1008 respectively connected to the heating elements 1006, wherein the vacuum electrodes 1008 provide power to the heating elements 1006 so as to heat the heating elements 1006.
The radio frequency shielding member 1007 is arranged outside the isolation ring 1005 in a surrounding manner and connected to the isolation ring 1005, and the heating unit 1006 is arranged inside the radio frequency shielding member 1007 in a surrounding manner and used for heating the radio frequency shielding member 1007 and the isolation ring 1005 (the radio frequency shielding member 1007 and the isolation ring 1005 transfer heat by contact). The vacuum electrode 1008 is disposed on the cavity end cap 1012, a connection line between the vacuum electrode 1008 and the heating element 1006 is surrounded by a corrugated tube (or not), one end of the corrugated tube is connected to the rf shield 1007, and the other end of the corrugated tube is connected to the cavity end cap 1012 of the vacuum reaction cavity 1001. It should be noted that, if the connection line between the two is not surrounded by the bellows, at least one bellows is included, one end of which is connected to the rf shield 1007, and the other end of which is connected to the cavity end cap 1012 of the vacuum reaction chamber 1001, so as to complete the grounding of the rf shield 1007; the bellows also ensures that the connection to the chamber end cap 1012 and the rf shield 1007 is always made as the isolator ring 1005 moves up and down.
Fig. 2 is a schematic structural diagram of the portions of the isolation ring 1005 and the rf shield 1007 shown in fig. 1. In this embodiment, a side of the isolation ring 1005 away from the upper electrode 1002 is a step-like structure, which includes: an upper end 1051, a transition portion 1052, and a lower end 1053. The upper end 1051 is disposed around the outer side of the upper electrode 1002, the lower end 1053 is disposed below the upper end 1051, and the upper end 1051 extends outward (opens as a horn downward), and a transition portion 1052 is disposed therebetween.
The radio frequency shield 1007 (see fig. 2) includes: a first radio frequency shield 1071 and a second radio frequency shield 1072. The first radio frequency shielding piece 1071 is matched with a step-shaped structure on the outer side of the isolating ring 1005, a plurality of grooves are formed in the first radio frequency shielding piece 1071 in a surrounding mode, and the grooves are used for containing the heating body 1006. The second rf shield 1072 is a plate structure, and is located on the first rf shield 1071, and is connected to the first rf shield 1071 to wrap the heating element 1006 in the groove. In one embodiment, the upper end surface of the second rf shield 1072 is flush with the upper end surface of the isolator ring 1005 to maintain the alignment of the workpiece. The radio frequency shielding member 1007 constructs a metal conductor shielding electric field (in a groove) for the heating element 1006, so that the heating element 1006 can work in a vacuum environment with a radio frequency electric field, and an ignition (arc) phenomenon cannot occur.
The first rf shield 1071, the second rf shield 1072 and the isolating ring 1005 are connected by mechanical fastening means or by welding (e.g. soldering). In one embodiment, the mechanical fastening means is a bolt assembly.
In this embodiment, the heating element 1006 is a heating tube, and the first rf shielding member 1071 and the second rf shielding member 1072 are aluminum casings. A plurality of bolt holes are formed in the isolating ring 1005, a plurality of thread through holes are correspondingly formed in the first radio frequency shielding piece 1071 and the second radio frequency shielding piece 1072, and bolts (screws) 1073 are sequentially inserted into the thread through holes in the second radio frequency shielding piece 1072 and the first radio frequency shielding piece 1071 and the bolt holes in the isolating ring 1005 to assemble and connect the three components (the top of the bolt 1073 is flush with the top of the second radio frequency shielding piece 1072).
Typically, the bottom electrode 1003 comprises a pedestal for supporting the wafer 1004, a source of RF power connected to and supplying RF power to the pedestal, and the pedestal comprises an electrostatic chuck (not shown) on which the wafer 1004 to be processed is placed. A vacuum pump for vacuum pumping is connected below the reaction chamber body 1011, and the connection (pumping port) between the vacuum pump and the reaction chamber body 1011 is located in the range surrounded by the isolation ring 1005, so that the reaction by-products are discharged out of the vacuum reaction chamber 1001 during the operation of the vacuum pump. A wafer transfer door is disposed on the sidewall of the reaction chamber 1011 for transferring the wafer 1004 between the inside and the outside of the vacuum reaction chamber 1001. The upper electrode 1002 includes a gas spraying device, the gas spraying device is connected to a gas supply device outside the vacuum reaction chamber 1001, and the reaction gas in the gas supply device enters the vacuum reaction chamber 1001 through the gas spraying device.
In one embodiment, the connection between the vacuum pump and the reaction chamber 1011 is located right below the transition portion 1052 of the isolation ring 1005, the inner side of the transition portion 1052 is a slope-shaped structure, and the lower surface of the first rf shield 1071 is lower than the lower surface of the lower end 1053 of the isolation ring 1005, so that the vacuum pump can exhaust the reaction by-products out of the vacuum reaction chamber 1001, the diffusion space of plasma during the process can be increased, and the uniformity of wafer processing can be enhanced.
When the plasma processing apparatus is used to process the wafer 1004, the air cylinder is used to drive the beam 1009 to move upward, so as to drive the isolation ring 1005 to move upward, so as to transfer the wafer 1004 from the outside of the vacuum reaction chamber 1001 to the inside of the vacuum reaction chamber 1001 through the wafer transfer door. After the wafer 1004 is placed on the electrostatic chuck, the air cylinder is used to drive the beam 1009 to move downward, so as to drive the isolation ring 1005 to move downward, so as to isolate plasma during the working process, thereby preventing the plasma from polluting the reaction chamber 1011.
The rf power of the rf power source is applied to the susceptor to generate an electric field in the vacuum reaction chamber 1001 for dissociating the reaction gas into plasma, which contains a large amount of active particles such as electrons, ions, excited atoms, molecules, and radicals, which can react with the surface of the wafer 1004 to be processed in various physical and chemical ways, so that the surface of the wafer 1004 is changed in shape, i.e., the etching process is completed. The connection between the vacuum pump and the reaction chamber 1011 is in the plasma environment surrounded by the isolation ring 1005, which facilitates the discharge of the gaseous by-products generated during the reaction process out of the vacuum reaction chamber 1001.
In addition, during the etching process of the wafer 1004, the vacuum electrode 1008 provides power for the heating element 1006 to start heating, so that the radio frequency shielding member 1007 is heated, and the radio frequency shielding member 1007 transfers heat to the isolation ring 1005 through contact, thereby heating the isolation ring 1005. Therefore, during the processing, the isolation ring 1005 is also in a high temperature state, and the gas by-products (mostly polymers) generated during the process cannot encounter the deposition of the isolation ring 1005 and accumulate on the isolation ring 1005, thereby avoiding the contamination to the isolation ring 1005 and the chamber environment, and the high temperature at the isolation ring 1005 cannot affect the etching rate of the wafer 1004 near the outer edge region, so as not to affect the etching uniformity of the wafer 1004.
Example two
Based on the structural characteristics of the plasma processing apparatus in the first embodiment, the present embodiment makes some changes to the structures of the isolation ring 2005 and the rf shield 2007, mainly to the structure of the rf shield 2007. Fig. 3 is a schematic structural diagram of the isolating ring 2005 and the rf shield 2007 in the plasma processing apparatus of this embodiment.
The side of the isolating ring 2005 away from the upper electrode is in a circular arc structure, and the structure of the side (inner side) close to the upper electrode is similar to that in the first embodiment, the isolating ring 2005 includes: an upper end 2051, a transition portion 2052, and a lower end 2053. The upper end portion 2051 is arranged around the outer side of the upper electrode, the lower end portion 2053 is located below the upper end portion 2051, the inner side surface of the upper end portion 2051 is obtained by diffusing and extending outwards from top to bottom, and the inner side surface of the lower end portion 2053 (the isolating ring 2005 is downwards in a horn opening) is arranged between the upper end portion and the lower end portion, and a transition portion 2052 is arranged between the upper end portion and the lower end portion. In this embodiment, a connection portion (an air suction port) between the vacuum pump and the reaction chamber cavity is located right below the transition portion 2052, the inner side of the transition portion 2052 is of a slope-shaped structure, and the inner side of the lower end portion 2053 is of a step-shaped structure, so that reaction byproducts are conveniently discharged out of the vacuum reaction chamber by the vacuum pump, and the structure also increases a space surrounded by the isolation ring 2005, so that a plasma diffusion range in a process is increased, and the processing of a wafer is facilitated.
The radio frequency shield 2007 includes a first metal plating layer 2071 on the outer surface of the isolating ring 2005 and a second metal plating layer 2072 on the first metal plating layer 2071, and the heating element 2006 is a heating element coating layer (heating element plating layer) 2006 between the first metal plating layer 2071 and the second metal plating layer 2072. An electric field shielding space is formed between the first metal plating layer 2071 and the second metal plating layer 2072, which can effectively ensure that the heating element coating 2006 is not ignited (arc) in a vacuum environment and in a radio frequency electric field environment, thereby ensuring the normal operation of the heating element coating 2006.
Further, a first insulating layer is provided between the first metal plating layer 2071 and the heating element coating 2006, and a second insulating layer is provided between the second metal plating layer 2072 and the heating element coating 2006. The heating element coating 2006 is wrapped by the first insulating layer and the second insulating layer, so that the heating element coating 2006 is not in contact with the outside and is in an electric field shielding environment.
Wherein the heating element coating layer 2006 is equivalent to a resistor or a conductor, which can be prepared from heating paste on the market, and specifically, the material of the heating element coating layer 2006 may include: graphene, carbon nanotubes, nichrome. In this embodiment, the first metal plating layer 2071 is a first aluminum coating layer, and the second metal plating layer 2072 is a second aluminum coating layer.
In summary, the plasma processing apparatus of the present invention combines the isolation ring, the rf shielding member, the heating element, and other components, so as to ensure that the isolation ring can be always in a high temperature state during the wafer processing process, thereby preventing the isolation ring from being contaminated by polymer deposition during the process, and meanwhile, the high temperature isolation ring can also improve the etching rate of the outer edge region of the wafer by high temperature radiation, and the etching rate of the wafer is not affected by the temperature of the isolation ring, thereby ensuring the uniformity of wafer etching.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (9)
1. A plasma processing apparatus, comprising:
the plasma reaction device comprises a vacuum reaction cavity, a plasma reaction cavity and a plasma reaction cavity, wherein an upper electrode and a lower electrode are arranged in the vacuum reaction cavity, the upper electrode and the lower electrode are oppositely arranged, and a plasma environment is arranged between the upper electrode and the lower electrode;
an isolation ring surrounding the upper electrode and exposed to a plasma environment;
the radio frequency shielding piece is arranged on the outer side of the isolating ring in a surrounding mode and is connected with the isolating ring;
the heating bodies are positioned in the radio frequency shielding piece and used for heating the isolating ring;
the vacuum electrodes are respectively connected with the corresponding heating bodies and supply power to the heating bodies;
one end of the corrugated pipes is connected with the radio frequency shielding piece, and the other end of the corrugated pipes is connected with the top of the reaction cavity.
2. The plasma processing apparatus according to claim 1,
the isolating ring is of a step-shaped structure at one side far away from the upper electrode, and comprises:
the upper end part is arranged at the outer side of the upper electrode in a surrounding way;
the lower end part is positioned below the upper end part and is obtained by outward diffusion of the upper end part from top to bottom, and a transition part is arranged between the upper end part and the lower end part.
3. The plasma processing apparatus of claim 2 wherein the radio frequency shield comprises:
the first radio frequency shielding piece is matched with the step-shaped structure on the outer side of the isolating ring, a plurality of grooves are formed in the first radio frequency shielding piece in a surrounding mode, and the grooves are used for accommodating the heating body;
and the second radio frequency shielding piece is positioned on the first radio frequency shielding piece and connected with the first radio frequency shielding piece so as to wrap the heating body in the groove.
4. The plasma processing apparatus according to claim 3,
the connection between the first radio frequency shield, the second radio frequency shield and the spacer ring may comprise welding or by mechanical fastening means.
5. The plasma processing apparatus according to claim 4,
the mechanical fastening device is a bolt assembly.
6. The plasma processing apparatus according to claim 1,
radio frequency shield includes the first metallic coating on the spacer ring surface and is located the second metallic coating on the first metallic coating, the heat-generating body is for being located the heat-generating body coating between first metallic coating and the second metallic coating, first metallic coating with set up first insulating layer between the heat-generating body coating, the second metallic coating with set up the second insulating layer between the heat-generating body coating.
7. The plasma processing apparatus according to claim 6,
the first metal coating is a first aluminum coating layer, and the second metal coating is a second aluminum coating layer.
8. The plasma processing apparatus according to claim 6,
the material of the heating body coating comprises: graphene, carbon nanotubes, nichrome.
9. The plasma processing apparatus according to claim 1,
the material of the isolating ring comprises quartz and ceramic;
the material of the radio frequency shield comprises a metal.
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| CN201911346160.0A CN113035679B (en) | 2019-12-24 | 2019-12-24 | Plasma processing device |
| TW109140156A TWI768546B (en) | 2019-12-24 | 2020-11-17 | A plasma treatment device |
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| CN201911346160.0A CN113035679B (en) | 2019-12-24 | 2019-12-24 | Plasma processing device |
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| TWI768546B (en) | 2022-06-21 |
| CN113035679B (en) | 2023-09-29 |
| TW202129690A (en) | 2021-08-01 |
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