CN113016072A - 显示装置 - Google Patents
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- Publication number
- CN113016072A CN113016072A CN201980073247.7A CN201980073247A CN113016072A CN 113016072 A CN113016072 A CN 113016072A CN 201980073247 A CN201980073247 A CN 201980073247A CN 113016072 A CN113016072 A CN 113016072A
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- China
- Prior art keywords
- light emitting
- light
- display device
- substrate
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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Abstract
提供了一种显示装置。显示装置包括:柔性基板;多个发光元件,在基板上彼此隔开;以及光阻断膜,填充发光元件之间并覆盖每个发光元件的一部分而分别限定光提取面,其中,光提取面之间的距离彼此相同。
Description
技术领域
本发明涉及一种显示装置,更为详细地涉及一种柔性显示装置。
背景技术
通常,显示装置包括利用光显示图像的显示面板以及向显示面板提供光的背光单元。显示面板包括包含有开关元件、像素电极、共同电极以及彩色层的多个像素单元。作为显示面板一般使用液晶显示面板。背光单元所提供的光通过液晶以及彩色层并借由光的可变混色而使显示装置可以显示彩色图像。此时,用于显示彩色图像的彩色层包括例如红色滤光器、绿色滤光器以及蓝色滤光器。而且,借由通过滤光器的光的混合而显示多种颜色。即,为了实现用于显示图像的多种颜色的光,需要滤光器。
并且,由于利用液晶而需要偏光,据此而应用偏光片并需要多种光学薄膜。由于这些多种部件,从而使显示装置变厚而且变重。
发明内容
本发明所要解决的技术问题在于提供一种能够省略液晶、背光单元、偏光片以及滤色器等的部件的包括多个发光二极管的显示装置。
本发明要解决的技术问题并不局限于以上提到的技术问题,未提到的其他技术问题能够通过下文的记载而被本领域技术人员明确地理解。
为了解决所要解决的技术问题,根据本发明的实施例的一种显示装置包括:柔性基板;多个发光元件,在所述基板上彼此隔开;以及光阻断膜,填充所述发光元件之间并覆盖所述发光元件中的每个的一部分,而分别限定光提取面,其中,所述光提取面之间的距离彼此相同。
根据实施例,所述发光元件可以沿第一方向相隔第一距离,并可以沿与所述第一方向垂直的第二方向相隔第二距离,所述第一距离可以大于或等于所述第二距离。
根据实施例,所述基板可以沿所述第一方向卷曲。
根据实施例,在所述第一距离大于所述第二距离的情况下,所述光阻断膜沿第二方向覆盖所述发光元件的区域可以比沿第一方向覆盖所述发光元件的区域大。
根据实施例,所述显示装置还可以包括:共同电路,与所述发光元件共同电连接,其中,所述共同电路在所述基板可以具有网格结构。
根据实施例,所述显示装置还可以包括:保护层,在所述基板上覆盖所述发光元件,并包括使可见光透过的物质。
根据实施例,所述基板的硬度可以比所述发光元件中的每个的硬度小。
根据实施例,所述发光元件中的每个可以包括在所述基板上水平地彼此隔开的第一发光部、第二发光部以及第三发光部。
根据实施例,所述发光元件中的每个可以包括在所述基板上垂直层叠的第一发光部、第二发光部以及第三发光部。
根据实施例,所述第三发光部可以具有比所述第二发光部小的宽度,所述第二发光部可以具有比所述第一发光部小的宽度。
根据实施例,所述发光元件中的每个可以具有从所述基板的一面趋向于上方而逐渐变窄的宽度。
其他实施例的具体事项包含在详细说明以及附图中。
根据发明的实施例的显示装置,通过在柔软的基板上布置包含多个发光部的多个发光元件而可以以较少的电力提取高效率的光,从而可以应用于多种电子装置。
附图说明
图1a至图1c是用于说明根据本发明的一实施例的显示装置的平面图。
图2a是用于说明根据本发明的一实施例的发光元件的平面图。
图2b是将图2a的发光元件沿A-A’截取的剖面图。
图2c是将图2a的发光元件沿B-B’截取的剖面图。
图3a以及图3b是用于说明根据本发明的另一实施例的发光元件的剖面图。
图4a以及图4b是用于说明根据本发明的另一实施例的发光元件的剖面图。
图5a是用于说明根据本发明的又一实施例的发光元件的平面图。
图5b是将图5a的发光元件沿A-A’截取的剖面图。
图6a是用于说明根据本发发明的又一实施例的发光元件的平面图。
图6b是将图6a的发光元件沿A-A’和B-B’截取的剖面图。
图7a至图12a是用于说明根据本发明的一实施例的发光元件的制造方法的平面图。
图7b至图12b是将图7a至图12a的发光元件沿A-A’截取的剖面图。
图7c至图12c是将图7a至图12a的发光元件沿B-B’截取的剖面图。
图13a以及图13b是用于说明将根据本发明的一实施例而制造的发光元件贴装于贴装基板的方法的剖面图。
图14以及图15图示了应用了根据本发明的实施例的显示装置的电子装置。
具体实施方式
为了充分理解本发明的构成及效果,参照附图对本发明的优选实施例进行说明。然而,本发明并不局限于以下公开的实施例,可以实现为多种形态,并且能够进行多样的变更。
并且,在本发明的实施例中使用的术语除非被另外定义,否则可以被解释为相应技术领域中具有通常知识的人员通常已知的含义。
以下,参照附图针对根据本发明的实施例的显示装置进行详细说明。
图1a至图1c是用于说明根据本发明的一实施例的显示装置的平面图。图2a是用于说明根据本发明的一实施例的发光元件的平面图,图2b是将图2a的发光元件沿A-A’截取的剖明图,图2c是将图2a的发光元件沿B-B’截取的剖明图。图3a以及图3b是用于说明根据本发明的另一实施例的发光元件的剖面图。图4a以及图4b是用于说明根据本发明的又一实施例的发光元件的剖面图。
参照图1a、图1b、图1c、图2a、图2b、图2c、图3a、图3b、图4a以及图4b,显示装置可以包括基板SUB以及布置于基板SUB上的多个发光元件LED。图1a以及图1b是在显示装置中观察多个发光元件LED中的每一个的第一面的平面图,图1c是在显示装置中从与每个发光元件LED的第二面对向的另一面观察的平面图。每个发光元件LED的第二面可以是与基板SUB相面对的面。
基板SUB可以包括具有柔性(flexibility)以及可见光透射特性的塑料基板SUB。塑料基板SUB可以包括如聚对苯二甲酸乙二醇酯(PET:polyethylene terephthalate)或聚萘二甲酸乙二醇酯(PEN:polyethylene naphthalate)的聚酯树脂(polyester resin)、聚丙烯腈树脂(polyacrylonitrile resin)、聚酰亚胺树脂(polyimide resin)、聚甲基丙烯酸甲酯树脂(polymethyl methacrylate resin)、聚碳酸酯(PC:polycarbonate)树脂、聚醚砜(PES:polyethersulfone)树脂、聚酰胺树脂(Polyamide resin)、环烯烃树脂(cycloolefin resin)、聚苯乙烯树脂(polystyrene resin)、聚酰胺酰亚胺树脂(polyamide imide resin)、聚醚酰亚胺树脂(polyether imide resin)、聚甲基硅氧烷(PDMS:polymethyl siloxane)树脂、聚醚醚酮(PEEK:polyetheretherketone)树脂以及聚氯乙烯树脂(polyvinylchloride resin)中的至少一种。然而,塑料基板(SUB)并不局限于上述的物质。
根据一实施例,基板SUB可以沿第一方向DR1卷曲(rolling)。
在基板SUB的第一表面上,多个发光元件LED分别可以沿第一方向DR1按第一距离DT1隔开而布置,并且可以沿与第一方向DR1垂直的方向的第二方向DR2按第二距离DT2隔开而布置。根据一实施例,第一距离DT1可以比第二距离DT2大。在此情况下,发光元件LED沿第一方向DR1隔开更大,从而基板SUB可以易于沿第一方向DR1卷曲。根据另一实施例,第一距离DT1实质上可以与第二距离DT2相同。
发光元件LED之间的第一距离DT1以及第二距离DT2可以是每个发光元件LED的临界尺寸(critical dimension)CD的8倍至15备份。发光元件LED的临界尺寸可以是50~80μm。
根据一实施例,基板SUB可以具有第一硬度,每个发光元件LED可以具有第二硬度。第一硬度可以比第二硬度小。由于具有50~80μm的非常小的临界尺寸的发光元件LED之间按第一距离DT1以及第二距离DT2而充分地隔开,从而即使发光元件LED以比基板SUB更硬的材质构成,在基板SUB卷曲并弯曲的情况下,可以防止发光元件LED破损等损伤。
根据图1a所示的一实施例,显示装置还可以包括在基板SUB上填充发光元件LED之间并覆盖发光元件LED的保护层PRT。保护层PRT可以包括使可见光透过并柔软的物质。保护层PRT可以包括硅类树脂,具体地,可以包括如硅氧烷类树脂的硅类树脂或环氧树脂。例如,保护层PRT可以包括PDMS。在此情况下,每个发光元件LED的发光区域LEA可以与光提取区域LEX相同。发光区域LEA表示发光元件LED发出光的区域,光提取区域LEX表示从发光区域LEA发出的光被提取到外部的区域。发光区域LEA以及光提取区域LEX以基板的一面为基准。作为一例,在发光元件LED之间的第一距离DT1以及第二距离DT2相同的情况下,光提取区域LEX之间的距离可以相同。作为另外一例,在发光元件LED之间的第一距离DT1大于第二距离DT2的情况下,光提取区域LEX之间的距离可以根据发光元件LED之间的距离而彼此不同。
根据图1b所示的另一实施例,显示装置可以还包括在基板SUB上填充发光元件LED之间且覆盖每个发光元件LED的一部分的光阻断膜LS。光阻断膜LS可以包括具有绝缘特性并吸收或阻隔光的物质。例如,光阻断膜LS可以包括光致抗蚀剂或黑色矩阵(blackmatrix)。未形成光阻断膜LS的部分可以被保护层PRT保护。在此情况下,由于光阻断膜LS,各个发光元件的光提取区域可以比发光区域小。从而,可以增加从每个发光元件LED发出的光的明暗比(contrast)。
继续参照图1b,在发光元件LED中,在第一距离DT1比第二距离DT2大的情况下,光阻断膜LS沿第二方向DR2覆盖发光元件LED的区域可以比沿第一方向DR1覆盖发光元件LED的区域大。作为一例,光阻断膜LS沿第一方向DR1使发光元件暴露,然而沿第二方向DR2覆盖发光元件LED的一部分(即,第一距离DT1以及第二距离DT2的差异程度),从而可以使光提取区域LEX按第一距离DT1等间距而隔开。如此,若光提取区域LEX之间按等间距而隔开,则包含发光元件LED的显示装置整体上可以发出均匀的光。
根据图2a、图2b、图2c、图3a以及图3b所示的一实施例,每个发光元件LED可以包括垂直层叠的第一发光部LE1、第二发光部LE2以及第三发光部LE3。根据一实施例,第一发光部LE1可以发出波长最短的光,第二发光部LE2可以发出比从第一发光部LE1发出的光的波长长并比从第三发光部LE3发出的光的波长短的波长的光,第三发光部LE3可以发出波长最长的光。作为一例,第一发光部LE1可以发出蓝光,第二发光部LE2可以发出绿光,第三发光部LE3可以发出红光。然而,第一发光部至第三发光部LE1、LE2、LE3分别发出的光的颜色并不局限于此,可以变更为多种。例如,第一发光部至第三发光部LE1、LE2、LE3依次可以发出红光、蓝光以及绿光。或者,第一发光部至第三发光部LE1、LE2、LE3分别可以发出彼此不同的光,但是一部分可以发出相同的光。
第一发光部LE1可以包括第一n型半导体层102、第一活性层104、第一p型半导体层106以及第一欧姆层108。第二发光部LE2可以包括第二n型半导体层202、第二活性层204、第二p型半导体层206以及第二欧姆层208。第三发光部LE3可以包括第三n型半导体层302、第三活性层304、第三p型半导体层306以及第三欧姆层308。
第一n型半导体层102、第二n型半导体层202以及第三n型半导体层302分别可以是掺杂有Si的氮化镓类半导体层。第一p型半导体层106、第二p型半导体层206以及第三p型半导体层306分别可以是掺杂有Mg的氮化镓类半导体层。第一活性层104、第二活性层204以及第三活性层可以分别包括多量子阱结构(MQW:Multi Quantum Well),并且其组成比可以决定为发出所需的峰值波长的光。第一欧姆层108、第二欧姆层208以及第三欧姆层308可以使用选自铟锡氧化物(ITO:Indium Tin Oxide)、掺杂锌的铟锡氧化物(ZITO:Zinc-dopedIndium Tin Oxide)、氧化铟锌(ZIO:Zinc Indium Oxide)、氧化镓铟(GIO:Gallium IndiumOxide)、氧化锌锡(ZTO:Zinc Tin Oxide)、掺杂氟的氧化锡(FTO:Fluorine-doped TinOxide)、掺杂铝的氧化锌(AZO:Aluminium-doped Zinc Oxide)、掺杂镓的氧化锌(GZO:Gallium-doped Zinc Oxide)、In4Sn3O12以及Zn(1-x)MgxO(氧化锌镁,0≤x≤1)中的至少一个透明氧化物层(TCO:Transparent Conductive Oxide)。第一发光部LE1中第一n型半导体层102、第一活性层104、第一p型半导体层106以及第一欧姆层108可以依次层叠,第二发光部中LE2中第二欧姆层208、第二p型半导体层206、第二活性层204以及第二n型半导体层202可以依次层叠,第三发光部中LE3中第三欧姆层308、第三p型半导体层306、第三活性层304以及第三n型半导体层302可以依次层叠。根据一实施例,第二发光部LE2可以具有比第一发光部LE1小的平面积,第三发光部LE3可以具有比第二发光部LE2小的平面积。作为一例,第一发光部LE1可以具有第一活性层104、第一p型半导体层106以及第一欧姆层108被蚀刻而暴露第一n型半导体层的一部分102的结构。第二发光部LE2可以具有比第一发光部LE1小的平面积而以暴露第一发光部LE1的第一欧姆层108,并且具有第二p型半导体层206、第二活性层204以及第二n型半导体层202被蚀刻而暴露第二欧姆层208的一部分的结构。第三发光部LE3可以具有比第二发光部LE2小的平面积而暴露第二n型半导体层202,并且具有第三p型半导体层306、第三活性层304以及第三n型半导体层302被蚀刻而暴露第三欧姆层308的一部分的结构。
发光元件LED还可以包括:第一垫PD1,与第一n型半导体层102电连接;第二垫PD2,与第二n型半导体层202电连接;第三垫PD3,与第三n型半导体层302电连接;以及共同垫CPD,与第一欧姆层108、第二欧姆层208以及第三欧姆层308共同电连接。第一垫PD1、第二垫PD2、第三垫PD3以及共同垫CPD中的每个可以包括选自以Au、Ag、Ni、Al、Rh、Pd、Ir、Ru、Mg、Zn、Pt、Hf、Cr、Ti以及Cu构成的群中的至少一个。并且,可以包括上述金属的合金。
本实施例中,示例性地说明了第一欧姆层108、第二欧姆层208以及第三欧姆层308电连接于共同垫CPD的例子,然而第一n型半导体层102、第二n型半导体层202以及第三n型半导体层302也可以电连接于共同垫CPD。
发光元件LED还可以包括在第一发光部LE1以及第二发光部LE2之间将第一发光部LE1以及第二发光部LE2粘合的第一粘合部AD1和在第二发光部LE2以及第三发光部LE3之间将第二发光部LE2以及第三发光部LE3粘合的第二粘合部AD2。第一粘合部AD1以及第二粘合部AD2分别可以包括具有绝缘性并使可见光透过而且具有粘合特性的物质。第一粘合部AD1以及第二粘合部AD2可以分别包括玻璃(glass)、聚合物(polymer)、抗蚀剂(resist)或者聚酰亚胺(polyimide)等。例如,第一粘合部AD1以及第二粘合部AD2中的每个可以包括旋涂玻璃(SOG:Spin On Glass)、苯并环丁烯(BCB:benzocyclobutene)、氢硅倍半环氧乙烷(HSQ:hydrogen silsesquioxane)或者SU-8光致抗蚀剂。
选择性地,发光元件LED还可以包括布置于第一发光部LE1以及第二发光部LE2之间的第一滤色器CF1和布置于第二发光部LE2以及第三发光部LE3之间的第二滤色器CF2。第一滤色器CF1可以反射从第一发光部LE1发出的光使得从第一发光部LE1发出的光均不会对第二发光部LE2以及第三发光部LE3产生影响,并且可以使分别从第二发光部LE2以及第三发光部LE3发出的光通过。第二滤色器CF2可以反射分别从第一发光部LE1以及第二发光部LE2发出的光使得分别从第一发光部LE1以及第二发光部LE2发出的光不会对第三发光部LE3产生影响,并且可以使从第三发光部LE3发出的光通过。第一滤色器CF1以及第二滤色器CF2分别可以包括具有TiO2以及SiO2交替层叠的结构的分布布拉格反射器(DBR:Distributed Bragg Reflector)。例如,第二滤色器CF2的TiO2以及SiO2交替的顺序和次数可以与第一滤色器CF1的TiO2以及SiO2交替的顺序和次数不同。
发光元件LED还可以包括:第一接触图案CT1,与第一n型半导体层102电接触;第一延伸图案EL1,与第一接触图案CT1电接触并延伸至第一n型半导体层102的平坦的上部;以及第一贯通图案VA1,电连接第一延伸图案EL1和第一垫PD1。还可以包括:第二接触图案CT2,与第二n型半导体层202电接触;第二延伸图案EL2,与第二接触图案CT2电接触并延伸至第一n型半导体层102的平坦的上部;以及第二贯通图案VA2,电连接第二延伸图案EL2和第二垫PD2。还可以包括:第三接触图案CT3,与第三n型半导体层302电接触;第三延伸图案EL3,与第三接触图案CT3电接触并延伸至第一n型半导体层102的平坦的上部;以及第三贯通图案VA3,电连接第三延伸图案EL3和第三垫PD3。还可包括:第一共同接触图案CCT1,与第一欧姆层108以及第二欧姆层208电接触;第二共同接触图案CCT2,与第三欧姆层308电连接;共同延伸图案CEL,与第一共同接触图案CCT1以及第二共同接触图案CCT2电接触,并延伸至第一n型半导体层102的平坦的上部;以及共同贯通图案CVA,电连接共同延伸图案CEL和共同垫CPD。在此情况下,第一垫PD1、第二垫PD2、第三垫PD3以及共同垫CPD均可布置于第三发光部LE3和基板SUB之间。
参照图2a、图2b、图2c、图3a以及图3b,第一贯通图案VA1、第二贯通图案VA2、第三贯通图案VA3以及共同贯通图案CVA布置于延伸至平坦的第一n型半导体层102的第一延伸图案EL1、第二延伸图案EL2、第三延伸图案EL3以及共同延伸图案CEL上,从而可以具有彼此相同的高度(height)。因此,通过每个第一贯通图案VA1、第二贯通图案VA2、第三贯通图案VA3以及共同贯通图案CVA可以更加稳定地将所需的电流提供至第一n型半导体层102、第二n型半导体层202、第三n型半导体层302中的每一个和第一欧姆层108、第二欧姆层208以及第三欧姆层308。根据一实施例,第一垫PD1、第二垫PD2、第三垫PD3以及共同垫CPD分别可延伸至覆盖发光元件LED的钝化膜PVT。因此,在发光元件LED的尺寸小而使第一垫PD1、第二垫PD2、第三垫PD3以及共同垫CPD的位置或尺寸不适合用于贴装的基板SUB的情况下,可以将第一垫PD1、第二垫PD2、第三垫PD3以及共同垫CPD在钝化膜PVT上延伸,从而可以容易地贴装于目的基板SUB。
参照图1a、图1b、图2a、图2b、图2c、图3a以及图3b,每个第三发光部LE3可以布置为与基板SUB相面对,每个第一发光部LE1的一面可以包括发光区域LEA。根据图2a、图2b以及图2c所示的实施例,发光元件LED分别可借由保护层PRT而彼此绝缘。根据图3a以及图3b所示的另一实施例,显示装置还可以包括填充发光元件LED之间并覆盖每个发光元件LED的第一发光部LE1的一面的一部分的光阻断膜LS。第一发光部LE1的第一n型半导体层102的宽度可以是发光区域LEA。光阻断膜可以覆盖发光区域LEA的一部分,并可以定义光提取区域LEX。在此情况下,光提取区域LEX可以比发光区域LEA小。光阻断膜LS覆盖每个发光元件LED的第一面的一部分而减少光被提取的面的面积,从而可以增加从每个发光元件LED发出的光的明暗比。
根据图4a以及图4b所示的另一实施例,发光元件LED还可以包括与第一n型半导体层102电接触的第一接触图案CT1以及与第一接触图案CT1电接触并从第三发光部LE3延伸至第一发光部LE1的第一延伸图案EL1。还可以包括与第二n型半导体层202电接触的第二接触图案CT2以及与第二接触图案CT2电接触并从第三发光部LE3延伸至第一发光部LE1的第二延伸图案EL2。还可以包括与第三n型半导体层302电接触的第三接触图案CT3以及与第三接触图案CT3电接触并从发光元件LED的第三发光部LE3延伸至第一发光部LE1的第三延伸图案EL3。还可以包括:第一共同接触图案CCT1,与第一欧姆层108以及第二欧姆层208电接触;第二共同接触图案CCT2,与第三欧姆层308电接触;以及共同延伸图案CEL,与第一共同接触图案CCT1以及第二共同接触图案CCT2电接触并从发光元件LED的第三发光部LE3延伸至第一发光部LE1。在此情况下,第一发光部LE1与基板SUB相面对,并且与基板SUB的与第一发光部LE1相面对的一面对向的另一面可以包括光提取面。
图4a以及图4b所示的第一延伸图案EL1、第二延伸图案EL2、第三延伸图案EL3以及共同延伸图案CEL中的每个可包括选自Au、Ag、Ni、Al、Rh、Pd、Ir、Ru、Mg、Zn、Pt、Hf、Cr、Ti以及CU构成的群中的至少一个。并且,可以包括上述金属的合金。包含所述的金属的第一延伸图案EL1、第二延伸图案EL2、第三延伸图案EL3以及共同延伸图案CEL从发光元件LED的第三发光部LE3延伸至第一发光部LE1而布置于发光元件LED的侧面,从而可以起到光阻断膜的功能。并且,可以具有从第一发光部LE1至第三发光部LE3逐渐变小的宽度。因此,可以容易地卷曲布置有多个发光元件LED的基板SUB。
显示装置还可以包括分别与第一垫PD1、第二垫PD2、第三垫PD3以及共同垫CPD电连接的第一基板垫SPD1、第二基板垫SPD2、第三基板垫SPD3以及共同基板垫SCPD。第一基板垫SPD1、第二基板垫SPD2、第三基板垫SPD3以及共同基板垫SCPD分别布置于与第一垫PD1、第二垫PD2、第三垫PD3以及共同垫CPD对应的位置,且可以分别借由如焊料球(solderball)SD的导电性物质而电粘合。
显示装置还可以包括在与发光元件LED相面对的基板SUB的一面与共同基板垫SCPD电连接的共同电路CC(参照图1c)。共同电路CC可以具有将多个共同基板垫SCPD电连接的网格(mesh)结构。共同基板垫SCPD可以借由共同电路CC而彼此电连接。共同电路CC可以包括与各共同基板垫SCPD电连接的第一延伸部ET1以及第二延伸部ET2。如此,对共同基板垫SCPD施加预定的电压的共同电路CC以网格结构将多个发光元件LED的共同垫CPD电连接,从而可以在基板卷曲的期间,即使共同电路CC或共同基板垫SCPD中的一部分损伤,也可以对共同垫CPD施加预定的电压。
显示装置的发光元件可以多样地变更。以下,针对根据多种实施例的发光元件进行详细说明。
图5a是用于说明根据本发明的又一实施例的发光元件的平面图,图5b是将图5a的发光元件沿A-A’截取的剖面图。
参照图5a以及图5b,发光元件可以包括在同一平面上彼此水平隔开的第一发光部LE1、第二发光部LE2以及第三发光部LE3。
第一发光部LE1可以包括第一n型半导体层102、第一活性层104、第一p型半导体层106以及第一欧姆层108,并且第一活性层104、第一p型半导体层106以及第一欧姆层108可以具有台面(mesa)结构使得第一n型半导体层102的一部分暴露。第二发光部LE2可以包括第二n型半导体层202、第二活性层204、第二p型半导体层206以及第二欧姆层208,并且第二活性层204、第二p型半导体层206以及第二欧姆层208可以具有台面结构使得第二n型半导体层202的一部分暴露。第三发光部LE3可以包括第三n型半导体层302、第三活性层304、第三p型半导体层306以及第三欧姆层308,并且第三活性层304、第三p型半导体层306以及第三欧姆层308可以具有台面结构使得第三n型半导体层302的一部分暴露。
第一垫PD1可以通过第一接触图案CT1而与第一欧姆层108电连接,第二垫PD2可以通过第二接触图案CT2而与第二欧姆层208电连接,第三垫PD3可以通过第三接触图案CT3而与第三欧姆层308电连接。第一n型半导体层102、第二n型半导体层202以及第三n型半导体层302中的每个可以借由连接第一共同接触图案CCT1、第二共同接触图案CCT2以及第三共同接触图案CCT3的共同垫CPD而电连接。
本实施例中,示例性地说明第一n型半导体层102、第二n型半导体层202以及第三n型半导体层302电连接于共同垫CPD,然而第一欧姆层108、第二欧姆层208以及第三欧姆层308可以电连接于共同垫CPD。
针对在图5a以及图5b所示的发光元件中省略的详细说明与图1a、图1b、图2a、图2b、图2c、图3a、图3b、图4a以及图4b所示的发光元件相同,从而将其省略。
图6a是用于说明根据本发发明的又一实施例的发光元件的平面图,图6b是将图6a的发光元件沿A-A’和B-B’截取的剖面图。
参照图6a以及图6b,发光元件可以包括垂直层叠的第一发光部LE1、第二发光部LE2以及第三发光部LE3。
第一发光部LE1可以包括垂直层叠的第一n型半导体层102、第一活性层104、第一p型半导体层106以及第一欧姆层108。第二发光部LE2可以包括垂直层叠的第二n型半导体层202、第二活性层204、第二p型半导体层206以及第二欧姆层208。第三发光部LE3可以包括垂直层叠的第三欧姆层308、第三p型半导体层306、第三活性层304以及第三n型半导体层302。
第一垫PD1可以通过贯通第一发光部LE1、第二发光部LE2以及第三发光部LE3的第一贯通图案VA1与第一n型半导体层102电连接。第二垫PD2可以通过贯通第二发光部LE2以及第三发光部LE3的第二贯通图案VA2与第二n型半导体层202电连接。第三垫PD3可以通过第三贯通图案VA3与第三n型半导体层302电连接。共同垫CPD可以通过如下贯通图案而与第一欧姆层108、第二欧姆层208以及第三欧姆层308电连接:贯通第二发光部LE2以及第三发光部LE3而与第一欧姆层108电连接的第四贯通图案VA4;贯通第三发光部LE3而与第二欧姆层208电连接的第五贯通图案VA5;以及与第三欧姆层308电连接的第六贯通图案VA6。
发光元件还可以包括第一粘合部AD1、第二粘合部AD2、第一滤色器CF1以及第二滤色器CF2。
针对在图6a以及图6b所示的发光元件中省略的详细说明与图1a、图1b、图2a、图2b、图2c、图3a、图3b、图4a以及图4b所示的发光元件相同,从而将其省略。
以下,示例性地说明在图1a、图2a、图2b以及图2c所示的发光元件的制造方法。
图7a至图12a是用于说明根据本发明的一实施例的发光元件的制造方法的平面图,图7b至图12b是将图7a至图12a的发光元件沿A-A’截取的剖面图、图7c至图12c是将图7a至图12a的发光元件沿B-B’截取的剖面图。
参照图7a、图7b以及图7c,在第一基板100上可以依次形成第一n型半导体层102、第一活性层104、第一p型半导体层106以及第一欧姆层108,从而可以形成第一发光部LE1。在第一欧姆层108上还可以形成第一滤色器CF1。然而,可以省略第一滤色器CF1。在第二基板(未图示)上可以依次形成第二n型半导体层202、第二活性层204、第二p型半导体层206以及第二欧姆层208,从而可以形成第二发光部LE2。在第三基板(未图示)上可以依次形成第三n型半导体层302、第三活性层304、第三p型半导体层306以及第三欧姆层308,从而可以形成第三发光部LE3。在第三欧姆层308上还可以形成第二滤色器CF2。然而,可以省略第二滤色器CF2。在第一欧姆层108上形成第一粘合部AD1并粘合第二发光部LE2,使得第二欧姆层208粘合于第一粘合部AD1,并可以利用激光剥离(LLO:Laser Lift Off)或化学剥离(CLO:Chemical Lift Off)去除第二基板。在第二n型半导体层202上形成第二粘合部AD2并粘合第三发光部LF3,使得第三欧姆层308粘合于第二粘合部AD2,并可以利用LLO或CLO去除第三基板。
参照图8a、8b以及8c,利用第一掩膜(未图示)蚀刻第三n型半导体层302、第三活性层304以及第三p型半导体层306,从而暴露第三欧姆层308,并利用第二掩膜(未图示)蚀刻第三欧姆层308以及第一粘合部AD1,从而可以暴露第二n型半导体层,并利用第三掩膜(未图示)蚀刻第二n型半导体层202、第二活性层204以及第二p型半导体层206,从而可以暴露第二欧姆层208,并利用第四掩膜(未图示)蚀刻第二欧姆层208、第一粘合部AD1,从而可以暴露第一欧姆层108,并利用第五掩膜(未图示)蚀刻第一欧姆层108、第一p型半导体层106以及第一活性层104,从而可以暴露第一n型半导体层102。
参照图9a、图9b以及图9c,可以形成覆盖蚀刻的发光元件的绝缘膜IDL。绝缘膜IDL可以包括SiOx、SiNx、AlxOy以及SiOxNy中的一个。可以蚀刻绝缘膜IDL而形成暴露第一n型半导体层102、第二n型半导体层202、第三n型半导体层302、第一欧姆层108、第二欧姆层208以及第三欧姆层308的开口。
参照图10a、图10b以及图10c,可以形成:第一接触图案CT1,与借由绝缘膜IDL的开口而暴露的第一n型半导体层102电接触;第二接触图案CT2,与借由绝缘膜IDL的开口而暴露的第二n型半导体层202电接触;第三接触图案CT3,与借由绝缘膜IDL的开口而暴露的第三n型半导体层302电接触;第一共同接触图案CCT1,与与由绝缘膜IDL的开口而暴露的第一欧姆层108以及第二欧姆层208电连接;以及第二共同接触图案CCT2,与借由绝缘膜IDL的开口而暴露的第三欧姆层308电接触。
参照图11a、图11b以及图11c,可以形成如下延伸图案:第一延伸图案EL1,与第一接触图案CT1电接触,并沿着第一发光部LE1、第二发光部LE2以及第三发光部LE3的侧面延伸至形成于平坦的第一n型半导体层102上的绝缘膜IDL上;第二延伸图案EL2,与第二接触图案CT2电接触,并沿着第一发光部LE1、第二发光部LE2以及第三发光部LE3的侧面延伸至形成于平坦的第一n型半导体层102上的绝缘膜IDL上;第三延伸图案EL3,与第三接触图案CT3电接触,并沿着第一发光部LE1、第二发光部LE2以及第三发光部LE3的侧面延伸至形成于平坦的第一n型半导体层102上的绝缘膜IDL上;以及共同延伸图案CEL,与第一共同接触图案CCT1以及第二共同接触图案CCT2电接触,并沿着第一发光部LE1、第二发光部LE2以及第三发光部LE3的侧面延伸至形成于平坦的第一n型半导体层102上的绝缘膜IDL上。
参照图12a、图12b以及图12c,可以形成覆盖第一发光部LE1、第二发光部LE2、第三发光部LE3、第一延伸图案EL1、第二延伸图案EL2、第三延伸图案EL3以及共同延伸图案CEL的钝化膜PVT。钝化膜PVT可以包括至少一个无机物质或至少一个有机物质。作为有机物质可以包括丙烯醛基(acryl)、玻璃(glass)、聚合物(polymer)、抗蚀剂(resist)、聚酰亚胺(polyimide)、聚酰胺(PA:Polyamide)、旋涂玻璃(SOG:Spin On Glass)、苯并环丁烯(BCB:benzocyclobutene)、氢硅倍半环氧乙烷(HSQ:hydrogen silsesquioxane)或者SU-8光致抗蚀剂等中的一个,作为无机物可以包括SiOx、SiNx、AlxOy以及SiOxNy中的一个。钝化膜PVT可以形成为无色透明或者可以具有多种颜色。例如,钝化膜PVT可以提供为透明的,或者可以形成为黑色或白色等。
蚀刻钝化膜PVT,从而可以形成将第一延伸图案EL1、第二延伸图案EL2、第三延伸图案EL3以及共同延伸图案CEL暴露的贯通孔(未图示)。
将贯通孔以导电物质填充,从而可以分别形成第一贯通图案VA1、第二贯通图案VA2、第三贯通图案VA3以及共同贯通图案CVA。随后,可以分别形成与第一贯通图案VA1电连接的第一垫PD1、与第二贯通图案VA2电连接的第二垫PD2、与第三贯通图案VA3电连接的第三垫PD3以及与共同贯通图案CVA电连接的共同垫CPD。至此,在第一基板SUB上可以分别形成多个发光元件LED。
图13a以及图13b是用于说明将根据本发明的一实施例而制造的发光元件贴装于贴装基板的方法的剖面图。
参照图13a以及13b,将形成有发光元件LED的第一基板100颠倒,从而可以与目的贴装基板SUB相面对。在第一基板100的一面形成掩膜图案MSK之后,在第一基板100执行选择性激光剥离(selective LLO),并且可考虑相隔距离将发光元件LED从基板选择性地分离。
在与分离的每个发光元件LED的第一垫PD1、第二垫PD2、第三垫PD3以及共同垫CPD对应的位置可以分别形成第一基板垫SPD1、第二基板垫SPD2、第三基板垫SPD3以及共同基板垫SCPD。
第一垫PD1、第二垫PD2、第三垫PD3以及共同垫CPD分别与第一基板垫SPD1、第二基板垫SPD2、第三基板垫SPD3以及共同基板垫SCPD利用诸如焊球SD等的具有粘合性并具有导电性的物质粘合,从而可以使发光元件LED贴装于基板SUB上。
图14以及图15图示了应用了根据本发明的实施例的显示装置的电子装置。
参照图14,电子装置可以是手表。电子装置可以包括:壳体HS;以及显示部DP,能够以出入于壳体HS的内部以及外部的方式卷曲。显示部DP可以包括在图1a、图1b、图2a、图2b、图2c、图3a、图3b、图4a以及图4b中所述的显示装置。
根据一实施例,若利用静电方式以及压电方式拖动(drag)显示部DP,则可以调整显示部的面积。为了实现此方案,显示部DP的多个发光元件可以与独立驱动电路电连接。
参照图15,电子装置可以是可卷曲屏幕(rollable screen)。电子装置可以包括:壳体HS;以及显示部DP,能够以出入于壳体HS的内部以及外部的方式卷曲。显示部DP可以包括在图1a、图1b、图2a、图2b、图2c、图3a、图3b、图4a以及图4b中所述的显示装置。
根据本实施例,作为电子装置而示例性地说明了手表以及可卷曲屏幕,然而根据本发明的显示装置可以应用于多种电子装置。
以上,虽然参照附图对本发明的实施例进行了说明,但是在本发明所属技术领域中具有通常知识的人员可以理解本发明能够在不改变其技术思想或必要特征的情况下实施为其他具体的形态。因此,应该理解以上所述的实施例在所有方面均为示意性而并非限定性的。
Claims (11)
1.一种显示装置,其特征在于,包括:
柔性基板;
多个发光元件,在所述基板上彼此隔开;以及
光阻断膜,填充所述多个发光元件之间并覆盖所述多个发光元件中的每个的一部分而分别限定光提取面,
其中,所述光提取面之间的距离彼此相同。
2.如权利要求1所述的显示装置,其特征在于,
所述多个发光元件沿第一方向相隔第一距离,并沿与所述第一方向垂直的第二方向相隔第二距离,
所述第一距离大于或等于所述第二距离。
3.如权利要求2所述的显示装置,其特征在于,
所述基板沿所述第一方向卷曲。
4.如权利要求2所述的显示装置,其特征在于,
在所述第一距离大于所述第二距离的情况下,
所述光阻断膜沿第二方向覆盖所述发光元件的区域比沿所述第一方向覆盖所述发光元件的区域大。
5.如权利要求1所述的显示装置,其特征在于,还包括:
共同电路,与所述多个发光元件共同电连接,
其中,所述共同电路在所述基板具有网格结构。
6.如权利要求1所述的显示装置,其特征在于,还包括:
保护层,在所述基板上覆盖所述多个发光元件,并包括使可见光透过的物质。
7.如权利要求1所述的显示装置,其特征在于,
所述基板的硬度比所述多个发光元件中的每个的硬度小。
8.如权利要去1所述的显示装置,其特征在于,
所述多个发光元件中的每个包括在所述基板上水平地彼此隔开的第一发光部、第二发光部以及第三发光部。
9.如权利要求1所述的显示装置,其特征在于,
所述多个发光元件中的每个包括在所述基板上垂直层叠的第一发光部、第二发光部以及第三发光部。
10.如权利要求9所述的显示装置,其特征在于,
所述第三发光部具有比所述第二发光部小的宽度,
所述第二发光部具有比所述第一发光部小的宽度。
11.如权利要求1所述的显示装置,其特征在于,
所述多个发光元件中的每个具有从所述基板的一面趋向于上方而逐渐变窄的宽度。
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CN107211504A (zh) * | 2016-01-11 | 2017-09-26 | Lg电子株式会社 | 使用半导体发光器件的显示装置及制造方法 |
CN210743949U (zh) * | 2018-11-07 | 2020-06-12 | 首尔伟傲世有限公司 | 显示装置 |
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CN210743949U (zh) | 2020-06-12 |
JP7447105B2 (ja) | 2024-03-11 |
EP3879574A1 (en) | 2021-09-15 |
US11476236B2 (en) | 2022-10-18 |
EP3879574A4 (en) | 2022-08-03 |
JP2024063107A (ja) | 2024-05-10 |
JP2022505505A (ja) | 2022-01-14 |
US20230013944A1 (en) | 2023-01-19 |
BR112021008897A2 (pt) | 2021-08-10 |
KR20210072007A (ko) | 2021-06-16 |
WO2020096383A1 (ko) | 2020-05-14 |
US20200144233A1 (en) | 2020-05-07 |
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