CN113005421A - Vacuum plasma forming cavity equipment - Google Patents
Vacuum plasma forming cavity equipment Download PDFInfo
- Publication number
- CN113005421A CN113005421A CN202110268555.4A CN202110268555A CN113005421A CN 113005421 A CN113005421 A CN 113005421A CN 202110268555 A CN202110268555 A CN 202110268555A CN 113005421 A CN113005421 A CN 113005421A
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- CN
- China
- Prior art keywords
- cavity
- filter
- air inlet
- cooling
- plasma forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4402—Reduction of impurities in the source gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The invention relates to the technical field of coating equipment, and discloses vacuum plasma forming cavity equipment which comprises a cavity body with a hollow interior, an air inlet pipeline communicated with the cavity body, a filter plate, a discharging device and a workpiece, wherein the filter plate is used for sequentially filtering air in the air inlet pipeline before the air enters the cavity body; the number of the filter plates is at least three, and each filter plate is provided with a filter hole; in the direction along which the air flows, the number of filter pores of the filter sheet gradually increases, and the pore diameter of the filter pores gradually decreases.
Description
Technical Field
The invention relates to the technical field of coating equipment, in particular to vacuum plasma forming cavity equipment.
Background
Plasma, also known as plasma, has been widely used in the field of semiconductor integrated circuits, and the growth of thin films of different materials and the etching of circuits are generally achieved by plasma techniques. In the semiconductor packaging and textile industries, plasma is used to clean and modify the surface of materials to achieve special functions and effects; in the aspect of environmental protection, the plasma torch can safely solidify the high-pollution ash slag generated by the incinerator; has important effects in medical treatment and scientific research.
The present invention provides an apparatus for coating a workpiece using a plasma technique.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a vacuum plasma forming chamber apparatus.
In order to solve the technical problems, the invention adopts the following technical scheme:
a vacuum plasma forming cavity device comprises a cavity body with a hollow interior, an air inlet pipeline communicated with the cavity body, a filter plate used for filtering air in the air inlet pipeline in sequence before entering the cavity body, a discharging device arranged in the cavity body and a workpiece; the number of the filter plates is at least three, and each filter plate is provided with a filter hole; in the direction along which the air flows, the number of filter pores of the filter sheet gradually increases, and the pore diameter of the filter pores gradually decreases.
Further, the filter box body is arranged in the cavity; the air inlet pipeline penetrates through the cavity and the upper wall of the filtering box body to enter the filtering box body; the filter plates are sequentially and horizontally arranged in the box body from top to bottom, the filter plate on the uppermost layer is positioned at the lower part of the air inlet pipeline, and the filter hole of the filter plate on the lowermost layer is communicated with the cavity.
Further, the cooling device comprises a cooling plate arranged at the lower part of the cavity, a cooling pipeline which is arranged in the cooling plate and in which cooling water flows, and a water circulating device which is arranged outside the cavity and is communicated with the cooling pipeline; the workpiece is placed on a cooling plate.
Further, the device comprises a vacuum pumping device and a gas monitor which are communicated with the cavity.
Furthermore, a perspective window is arranged on the side edge of the cavity.
Compared with the prior art, the invention has the beneficial technical effects that:
1. compressed air after primary filtration enters the cavity from the air inlet pipeline, and in order to ensure the film coating effect, the air is further filtered by utilizing the multi-layer filter plate before entering the cavity; the invention adopts a multi-layer grading filtration mode, the number of the filter plates is gradually increased, the aperture is gradually reduced, the filtration efficiency and the filtration effect can be considered, and impurities in the air are prevented from entering the cavity.
2. The gas in the cavity is extracted through the vacuumizing device, the residual amount of the gas in the cavity is monitored through the gas monitor, and when the inert gas in the cavity reaches a set value, the vacuumizing device is suspended, so that a proper amount of the inert gas is reserved in the cavity, and the subsequent film coating effect is ensured.
Drawings
FIG. 1 is a cross-sectional view of the present invention;
FIG. 2 is a top view of the present invention;
fig. 3 is a working principle diagram of the present invention.
Detailed Description
A preferred embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1-2, a vacuum plasma forming chamber device comprises a hollow chamber 3, an air inlet pipe 1-1 communicated with the chamber, a filter plate 11 for filtering air in the air inlet pipe before entering the chamber, a discharging device and a workpiece 6 arranged in the chamber; the number of the filter plates is at least three, and each filter plate is provided with a filter hole; in the direction along which the air flows, the number of filter pores of the filter sheet gradually increases, and the pore diameter of the filter pores gradually decreases.
Comprises a filtering box body arranged in a cavity; the air inlet pipeline penetrates through the cavity and the upper wall of the filtering box body to enter the filtering box body; the filter plates are sequentially and horizontally arranged in the box body from top to bottom, the filter plate on the uppermost layer is positioned at the lower part of the air inlet pipeline, and the filter hole of the filter plate on the lowermost layer is communicated with the cavity.
In the embodiment, the number of the filter plates is three, the aperture of the uppermost filter plate is 3.4mm, and the aperture of the lowermost filter plate is 0.4 mm; the large-aperture filter holes are used for filtering large-particle impurities in the air and allowing the air and small-particle impurities to rapidly pass through; the small-aperture filtering holes are used for filtering small particle impurities in the air and finally filtering the small particle impurities in the air; the graded filtering mode can improve the air inlet speed, ensure the air filtering effect and improve the film coating quality of workpieces.
The air inlet pipeline is arranged in the air inlet shaft 1, the air inlet shaft is connected with the outer wall of the cavity through the connecting rod 10, the air inlet shaft penetrates through the upper wall of the cavity to enter the cavity, the bottom of the air inlet shaft is connected with the filtering box body through the connecting disc 2, the bottom of the air inlet pipeline is located above the highest filtering plate, and the filtering plate at the lowest layer serves as the bottom plate of the filtering box body.
As shown in fig. 1, the cooling device comprises a cooling plate 8 arranged at the lower part of the cavity, a cooling pipeline 7-1 arranged in the cooling plate and internally provided with cooling water in a flowing manner, and a water circulating device arranged outside the cavity and communicated with the cooling pipeline; the workpiece is placed on a cooling plate.
The cooling pipeline is arranged in the water inlet shaft 7, and the water inlet shaft penetrates through the lower wall of the cavity to enter the cavity; when the workpiece is coated, the temperature of the cavity and the workpiece rises, and the workpiece and the gas in the cavity need to be kept in a certain temperature range during coating.
As shown in fig. 2, comprises a vacuum device 4 and a gas monitor 5 which are communicated with the cavity.
Considering that some electrons or ions must be redirected to produce the conversion effect, a subatmospheric pressure is used in the ion conversion modification process, and a vacuum pressure of between 0.1Torr and 0.2Torr is generated by the ionized gas to allow the plasma to perform the ion conversion modification in a vacuum pressure environment.
As shown in fig. 3, the vacuum-pumping device 4 pumps out the ineffective gas elements in the cavity air, and controls a proper amount of inert gas to remain in the cavity through the gas monitor, and the discharge device activates the plasma to impact, so that the plasma moves at a high speed and adheres to the surface of the workpiece 6, and a uniform coating is formed on the surface of the workpiece after a period of time.
As shown in fig. 1, a transparent window 9 is arranged on the side of the cavity.
The perspective window is convenient for operators to observe the conditions inside the cavity, dynamically observes the ion conversion conditions in a vacuum state and the film coating conditions on the surface of a target workpiece through the etching principle, and is convenient for controlling the film coating effect.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein, and any reference signs in the claims are not intended to be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (5)
1. A vacuum plasma forming chamber device is characterized in that: the device comprises a hollow cavity, an air inlet pipeline communicated with the cavity, a filter plate used for filtering air in the air inlet pipeline before entering the cavity, a discharging device and a workpiece, wherein the discharging device and the workpiece are arranged in the cavity; the number of the filter plates is at least three, and each filter plate is provided with a filter hole; in the direction along which the air flows, the number of filter pores of the filter sheet gradually increases, and the pore diameter of the filter pores gradually decreases.
2. The vacuum plasma forming chamber apparatus of claim 1, wherein: comprises a filtering box body arranged in a cavity; the air inlet pipeline penetrates through the cavity and the upper wall of the filtering box body to enter the filtering box body; the filter plates are sequentially and horizontally arranged in the box body from top to bottom, the filter plate on the uppermost layer is positioned at the lower part of the air inlet pipeline, and the filter hole of the filter plate on the lowermost layer is communicated with the cavity.
3. The vacuum plasma forming chamber apparatus of claim 2, wherein: the cooling device comprises a cooling plate arranged at the lower part of a cavity, a cooling pipeline which is arranged in the cooling plate and in which cooling water flows, and a water circulating device which is arranged outside the cavity and is communicated with the cooling pipeline; the workpiece is placed on a cooling plate.
4. The vacuum plasma forming chamber apparatus of claim 1, wherein: comprises a vacuum pumping device and a gas monitor which are communicated with a cavity.
5. The vacuum plasma forming chamber apparatus of claim 1, wherein: and a perspective window is arranged on the side edge of the cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110268555.4A CN113005421A (en) | 2021-03-12 | 2021-03-12 | Vacuum plasma forming cavity equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110268555.4A CN113005421A (en) | 2021-03-12 | 2021-03-12 | Vacuum plasma forming cavity equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113005421A true CN113005421A (en) | 2021-06-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110268555.4A Pending CN113005421A (en) | 2021-03-12 | 2021-03-12 | Vacuum plasma forming cavity equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113005421A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0797690A (en) * | 1993-09-29 | 1995-04-11 | Toppan Printing Co Ltd | Plasma cvd device |
| CN106637097A (en) * | 2017-01-22 | 2017-05-10 | 魏永强 | Lining conical pipe and porous baffle composite multi-level magnetic field arc ion plating method |
| CN109306454A (en) * | 2018-10-26 | 2019-02-05 | 武汉华星光电半导体显示技术有限公司 | Evaporation coating device and its control method |
-
2021
- 2021-03-12 CN CN202110268555.4A patent/CN113005421A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0797690A (en) * | 1993-09-29 | 1995-04-11 | Toppan Printing Co Ltd | Plasma cvd device |
| CN106637097A (en) * | 2017-01-22 | 2017-05-10 | 魏永强 | Lining conical pipe and porous baffle composite multi-level magnetic field arc ion plating method |
| CN109306454A (en) * | 2018-10-26 | 2019-02-05 | 武汉华星光电半导体显示技术有限公司 | Evaporation coating device and its control method |
Non-Patent Citations (1)
| Title |
|---|
| 魏永强 等: "电弧离子镀中大颗粒缺陷清除方法的研究现状", 《热加工工艺》 * |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
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| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 201619 No. 1586 Changxing East Road, Dongjing Town, Songjiang District, Shanghai Applicant after: Shanghai xinkeqian IOT Technology Co.,Ltd. Address before: No.1586, Changxing East Road, Tongjing Town, Songjiang District, Shanghai, 201619 Applicant before: Shanghai xinkeqian IOT Technology Co.,Ltd. |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210622 |