CN113005415A - Vacuum coating system - Google Patents
Vacuum coating system Download PDFInfo
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- CN113005415A CN113005415A CN202110201847.6A CN202110201847A CN113005415A CN 113005415 A CN113005415 A CN 113005415A CN 202110201847 A CN202110201847 A CN 202110201847A CN 113005415 A CN113005415 A CN 113005415A
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- magnetic field
- substrate carrier
- substrate
- gas
- coating system
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a vacuum coating system, which comprises a fixed part and a movable part, wherein the movable part and the fixed part form an opening and closing structure, a back plate used for bearing a target material is arranged in the movable part, the back plate is connected with a cathode of an electrode, a substrate carrier is arranged in the fixed part, the substrate carrier is arranged in parallel with the back plate, an isolation magnetic field generator is arranged between the back plate and the substrate carrier and used for generating an isolation magnetic field, and the substrate carrier is movably connected with the fixed part.
Description
Technical Field
The invention relates to the technical field of coating equipment, in particular to a vacuum coating system.
Background
In vacuum coating, atoms of a material are extracted from a heating source and hit on the surface of an object to be coated in a vacuum chamber. Vacuum coating has three forms, namely evaporation coating, sputtering coating and ion plating. Sputtering coating is a coating technique in which a coating material is used as a target cathode, argon ions are used for bombarding a target material to generate cathode sputtering, and target material atoms are sputtered onto a workpiece to form a deposition layer. The magnetron sputtering coating has the advantages that: the film layer has strong adhesive force; the film layer has compact structure and good corrosion resistance; the coating has the winding and plating performance and can coat a film on the surface of a part with a complex shape; the film forming rate is high, and can be equivalent to the rate of evaporation coating, and a thick film can be coated. However, in the magnetron sputtering coating process, not only neutral gas molecules but also gas positive ions reach the substrate, the gas molecules are adsorbed on the surface of the film, and the positive ions can also penetrate into the film to a certain depth, so that the gas content in the deposited film is high, and the film quality is influenced.
Disclosure of Invention
The invention aims to solve the problem that the gas content in a film subjected to sputtering coating is high in the prior art, and provides a vacuum coating system which is used for reducing the gas content in the film and improving the quality of the film.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides a vacuum coating system, includes fixed part and the movable part that forms the opening and shutting with the fixed part, and the inside backplate that is used for bearing the target that sets up of movable part, the negative pole of electrode is connected to the backplate, the inside substrate carrier that sets up of fixed part, substrate carrier and backplate parallel arrangement, set up isolation magnetic field generator between backplate and the substrate carrier, isolation magnetic field generator is used for producing isolation magnetic field, substrate carrier and fixed part swing joint.
Further, the inside spout that sets up of fixed part, the substrate carrier is located the inside of spout, and the fixed part setting is used for adjusting the adjusting part that the substrate carrier is located, adjusting part include set screw and with set screw threaded connection's screw seat, the screw seat is fixed in the fixed part, set screw one end sets up swivelling joint substrate carrier, set screw's the other end sets up the handle. The position between the substrate carrier and the back plate can be adjusted by rotating the positioning screw through the handle, so that the applicability is improved.
Furthermore, a cooling pipe is arranged in the substrate carrier and used for cooling the substrate, the positioning screw is a hollow screw, and a cooling medium inlet pipe and a cooling medium outlet pipe of the cooling pipe penetrate through an inner hole of the positioning screw to realize external connection, so that the whole structure is compact.
Furthermore, the fixing part is provided with a vacuum tube for vacuumizing the coating box and an air inlet tube for feeding working gas.
When the vacuum coating system is used for coating, the fixed part and the movable part are combined to form a coating space, the coating space is firstly vacuumized, then working gas enters the coating space from the gas inlet pipe and is ionized to form gas positive ions and gas negative ions, the gas positive ions bombard a target material on the back plate under the attraction of a cathode, target material atoms leave the target material and move towards the direction close to the substrate, and the target material atoms are deposited on the substrate to form a film. In the process, the isolating magnetic field generated by the isolating magnetic field generator blocks positive ions of the gas.
Further, the isolation magnetic field is provided with an edge line parallel to the substrate carrier, and when the substrate is mounted on the substrate carrier, the minimum distance L between the edge line and the substrate is matched with the magnetic field intensity B of the isolation magnetic field E, so that positive ions in the gas cannot reach the substrate.
Further, the matching relationship between the minimum distance L between the edge line and the substrate and the magnetic field strength B is as follows:
wherein m is the mass of the positive gas ions, q is the charge amount of the positive gas ions, and Vo is the standard speed Vo of the positive gas ions entering the isolation magnetic field.
When the positive gas ions enter the isolation magnetic field from the edge line of the isolation magnetic field at a speed less than the standard speed Vo, the positive gas ions are subjected to the lorentz force to make circular motion, and no matter how many the bias angles of the positive gas ions are, the positive gas ions cannot reach the substrate.
In the coating process, because the speeds of positive ions of gas in the coating box approaching the substrate are different, the value of the standard speed Vo needs to keep the effectiveness of the isolation magnetic field.
Preferably, the method for obtaining the standard speed Vo comprises the following steps:
a1: measuring the positive ion velocity V of the gas at a distance L from the surface of the substrate to form a data total database M related to the numerical value of the positive ion velocity V of the gas;
a2: and taking out the numerical value dense numerical value section G in the data total library M, and taking the maximum numerical value speed Vmax in the dense numerical value section G as the standard speed Vo of the isolated magnetic field.
By acquiring the standard speed Vo, the isolation magnetic field can intercept a large amount of positive gas ions. The standard speed Vo obtained by the method is generally applicable to only one target material.
The position of the substrate carrier (10) is adjustable, the position of the substrate is adjustable under the condition that the position of the edge line of the isolation magnetic field and the magnetic field intensity are not changed, and further the minimum distance L between the edge line and the substrate can be changed, so that the effective isolation effect of the isolation magnetic field is met for different standard speeds Vo under the condition of different targets.
The invention has the beneficial effects that:
1. according to the vacuum coating system, the isolation magnetic field is arranged between the target material and the substrate, and can block positive gas ions, so that the positive air ions are prevented from permeating into the film when the film is formed on the surface of the substrate, and the quality of the film is improved.
2. The position of the substrate carrier in the vacuum coating system is adjustable, so that the applicability of the vacuum coating system can be further improved;
3. the vacuum coating system can be improved and realized on the existing magnetron sputtering coating device, and has the advantages of low implementation cost, obvious effect and high application value.
Drawings
FIG. 1 is a schematic structural view of the present vacuum plating system;
FIG. 2 is a schematic view of the vacuum coating system at the position of a cooling pipe;
FIG. 3 is a diagram of the motion trajectory (normal bias angle) of positive gas ions in an isolated magnetic field;
FIG. 4 is a diagram of the motion trajectory (maximum bias angle) of positive gas ions in an isolated magnetic field;
fig. 5 is a step chart of the method of obtaining the standard speed Vo.
In the figure: 1. coating a film box; 2. a cathode; 3. a magnet; 4. a back plate; 5. a target material; 6. an air inlet pipe; 7. a vacuum tube; 8. an isolated magnetic field generator; 9. a substrate; 10. a substrate carrier; 11. a chute; 12. positioning a threaded rod; 13. a threaded seat; 14. a handle; 15. a cooling medium inlet pipe; 16. a cooling tube; 17. and a cooling medium outlet pipe.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Referring to fig. 1, a vacuum coating system includes a fixed portion 3 and a movable portion 1 that forms an opening and closing with the fixed portion 3, a back plate 4 for bearing a target 5 is arranged inside the movable portion 1, the back plate 4 is connected with a cathode 2 of an electrode, a substrate carrier 10 is arranged inside the fixed portion 3, the substrate carrier 10 is arranged in parallel with the back plate 4, an isolation magnetic field generator 8 is arranged between the back plate 4 and the substrate carrier 10, the isolation magnetic field generator 8 is used for generating an isolation magnetic field, and the substrate carrier 10 is movably connected with the fixed portion 3.
Further, fixed part 3 is inside to set up spout 11, substrate carrier 10 is located the inside of spout 11, and fixed part 3 sets up the adjusting part that is used for adjusting substrate carrier 10 and is located, adjusting part includes set screw 12 and the screw seat 13 with set screw 12 threaded connection, screw seat 13 is fixed in fixed part 3, set screw 12 one end sets up swivelling joint substrate carrier 10, set screw 12's the other end sets up handle 14. By rotating the set screw 12 via the handle 14, the position between the substrate carrier 10 and the backing plate 4 can be adjusted, improving the applicability.
Further, referring to fig. 2, a cooling pipe 16 is disposed inside the substrate carrier 10, the cooling pipe 16 is used for cooling the substrate 9, the set screw 12 is a hollow screw, and a cooling medium inlet pipe 15 and a cooling medium outlet pipe 17 of the cooling pipe 16 penetrate through an inner hole of the set screw 12 to achieve external connection, so that the whole structure is compact.
Further, the fixing portion 3 is provided with a vacuum tube 7 for evacuating the coating box 1 to a vacuum state and an air inlet tube 6 for feeding working gas. The working gas in this example was argon.
When the vacuum coating system is used for coating, the fixed part 3 and the movable part 1 are combined to form a coating space, firstly, the coating box 1 needs to be vacuumized, then working gas enters the coating box 1 from the air inlet pipe 6 to be ionized to form gas positive ions and gas negative ions, the gas positive ions bombard the target 5 on the back plate 4 under the attraction of a cathode, atoms of the target 5 leave the target 5 and move towards the direction close to the substrate 9, and the target atoms are deposited on the substrate 9 to form a film. In the process, the isolating magnetic field generated by the isolating magnetic field generator 8 blocks positive gas ions.
Further, the isolation magnetic field is provided with edge lines parallel to the substrate carrier 10, and when the substrate is mounted on the substrate carrier 10, the minimum distance L between the edge lines and the substrate is matched with the magnetic field strength B of the isolation magnetic field E, so as to keep the positive ions of the gas from reaching the substrate 9.
Further, the matching relationship between the minimum distance L between the edge line and the substrate and the magnetic field strength B is as follows:
wherein m is the mass of the positive gas ions, q is the charge amount of the positive gas ions, and Vo is the standard speed Vo of the positive gas ions entering the isolation magnetic field.
When positive gas ions enter the isolating magnetic field from the edge line of the isolating magnetic field at a speed less than the standard speed Vo, the positive gas ions are subjected to Lorentz force to make circular motion, because of the fact that the positive gas ions are subjected to the Lorentz force
The L is greater than 2R. Referring to fig. 3 and 4, fig. 3 shows that positive gas ions enter the isolation magnetic field at a general bias angle, and exit the isolation magnetic field after passing through an arc in the isolation magnetic field; wherein FIG. 4 shows that positive gas ions enter the isolation magnetic field at the maximum bias angle, and exit the isolation magnetic field after passing through a full arc in the isolation magnetic field, i.e. no matter what the bias angle of the positive gas ions isI.e. none of the positive ions of the gas can reach the substrate 9.
In the coating process, because the speeds of positive gas ions in the coating box 1 approaching the substrate 9 are different, the value of the standard speed Vo needs to keep the effectiveness of the isolation magnetic field. In this embodiment, referring to fig. 5, the method for obtaining the standard speed Vo in this embodiment includes the following steps:
a1: measuring the positive ion velocity V of the gas at a distance L from the surface of the substrate to form a data total database M related to the numerical value of the positive ion velocity V of the gas;
a2: and taking out the numerical value dense numerical value section G in the data total library M, and taking the maximum numerical value speed Vmax in the dense numerical value section G as the standard speed Vo of the isolated magnetic field.
By acquiring the standard speed Vo by the method, the isolation magnetic field can intercept a large amount of positive ions of the gas, and the high effectiveness of isolation is kept.
By acquiring the standard speed Vo, the isolation magnetic field can intercept a large amount of positive gas ions.
The standard speed Vo obtained by the method is generally applicable to only one target material. Because the position of the substrate carrier (10) in the embodiment is adjustable, the position of the substrate is adjustable under the condition that the position of the edge line of the isolation magnetic field and the magnetic field intensity are not changed, and further the minimum distance L between the edge line and the substrate can be changed, so that the effective isolation effect of the isolation magnetic field can be met for different standard speeds Vo under the condition of different targets.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (6)
1. The utility model provides a vacuum coating system, its characterized in that, including fixed part (3) and movable part (1) that opens and shuts with fixed part 3 formation, inside backplate (4) that are used for bearing target (5) that set up of movable part (1), negative pole (2) of electrode are connected in backplate (4), fixed part (3) inside sets up substrate carrier (10), substrate carrier (10) and backplate (4) parallel arrangement, set up between backplate (4) and substrate carrier (10) and keep apart magnetic field generator (8), substrate carrier (10) and fixed part (3) swing joint.
2. A vacuum coating system according to claim 1, wherein the fixing part (3) is provided with a slide groove (11) therein, the substrate carrier (10) is located inside the slide groove 11, the fixing part (3) is provided with an adjusting assembly for adjusting the position of the substrate carrier (10), the adjusting assembly comprises a positioning screw (12) and a screw seat (13) in threaded connection with the positioning screw (12), the screw seat (13) is fixed to the fixing part (3), one end of the positioning screw (12) is provided with a rotary connection substrate carrier (10), and the other end of the positioning screw (12) is provided with a handle (14).
3. The vacuum coating system according to claim 2, wherein a cooling pipe (16) is arranged inside the substrate carrier (10), the set screw (12) is a hollow screw, and a cooling medium inlet pipe (15) and a cooling medium outlet pipe (17) of the cooling pipe (16) penetrate through an inner hole of the set screw (12) to realize external connection.
4. Vacuum coating system according to claim 1 or 2, characterized in that the isolating magnetic field is arranged with edge lines parallel to the substrate carrier (10).
5. The magnetron sputtering coating method and apparatus according to claim 4, wherein when the substrate is mounted on the substrate carrier (10), the minimum distance L between the edge line and the substrate matches with the magnetic field intensity B of the isolation magnetic field E, and the matching relationship between the distance L and the magnetic field intensity B is as follows:
wherein m is the mass of the positive gas ions, q is the charge amount of the positive gas ions, and Vo is the standard speed Vo of the positive gas ions entering the isolation magnetic field;
the method for obtaining the standard speed Vo comprises the following steps:
a1: measuring the positive ion velocity V of the gas at a distance L from the surface of the substrate to form a data total database M related to the numerical value of the positive ion velocity V of the gas;
a2: and taking out the numerical value dense numerical value section G in the data total library M, and taking the maximum numerical value speed Vmax in the dense numerical value section G as the standard speed Vo of the isolated magnetic field.
6. A vacuum coating system according to claim 1, wherein the fixing part (3) is provided with a vacuum tube (7) for evacuating the coating chamber (1) and an inlet tube (6) for the working gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110201847.6A CN113005415A (en) | 2021-02-23 | 2021-02-23 | Vacuum coating system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110201847.6A CN113005415A (en) | 2021-02-23 | 2021-02-23 | Vacuum coating system |
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| Publication Number | Publication Date |
|---|---|
| CN113005415A true CN113005415A (en) | 2021-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110201847.6A Pending CN113005415A (en) | 2021-02-23 | 2021-02-23 | Vacuum coating system |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0987839A (en) * | 1995-09-22 | 1997-03-31 | Semiconductor Energy Lab Co Ltd | Method and apparatus for thin film formation |
| JP2000313958A (en) * | 1999-04-28 | 2000-11-14 | Canon Inc | Thin film deposition system and thin film deposition |
| CN102234762A (en) * | 2010-04-23 | 2011-11-09 | 鸿富锦精密工业（深圳）有限公司 | Coating system |
| CN110438462A (en) * | 2019-07-24 | 2019-11-12 | 中山大学 | A kind of magnetic control sputtering device improving oxide semiconductor quality of forming film |
| CN111155067A (en) * | 2020-02-19 | 2020-05-15 | 三河市衡岳真空设备有限公司 | Magnetron sputtering equipment |
| CN111945122A (en) * | 2020-08-07 | 2020-11-17 | 安徽诚志显示玻璃有限公司 | TFT coating device |
-
2021
- 2021-02-23 CN CN202110201847.6A patent/CN113005415A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0987839A (en) * | 1995-09-22 | 1997-03-31 | Semiconductor Energy Lab Co Ltd | Method and apparatus for thin film formation |
| JP2000313958A (en) * | 1999-04-28 | 2000-11-14 | Canon Inc | Thin film deposition system and thin film deposition |
| CN102234762A (en) * | 2010-04-23 | 2011-11-09 | 鸿富锦精密工业（深圳）有限公司 | Coating system |
| CN110438462A (en) * | 2019-07-24 | 2019-11-12 | 中山大学 | A kind of magnetic control sputtering device improving oxide semiconductor quality of forming film |
| CN111155067A (en) * | 2020-02-19 | 2020-05-15 | 三河市衡岳真空设备有限公司 | Magnetron sputtering equipment |
| CN111945122A (en) * | 2020-08-07 | 2020-11-17 | 安徽诚志显示玻璃有限公司 | TFT coating device |
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