CN113004028A - 一种硅基低介微波介质陶瓷及其制备方法 - Google Patents

一种硅基低介微波介质陶瓷及其制备方法 Download PDF

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CN113004028A
CN113004028A CN202110230008.7A CN202110230008A CN113004028A CN 113004028 A CN113004028 A CN 113004028A CN 202110230008 A CN202110230008 A CN 202110230008A CN 113004028 A CN113004028 A CN 113004028A
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雷文
杜康
吕文中
付明
宋小强
王飞
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Wenzhou Institute Of Advanced Manufacturing Technology Huazhong University Of Science And Technology
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Abstract

本发明属于微波介质陶瓷技术领域，更具体地，涉及一种硅基低介微波介质陶瓷及其制备方法。将化学通式为xBaO‑yMO‑zSiO2(M＝Ca,Sr；0<x≤1.0；1.0≤y≤2.0；1.0≤z≤3.0)的化合物用于制备微波介质陶瓷材料。该陶瓷具有低介电常数(εr＝7.3～11.0)、优异的品质因数(Q×f＝5370～40500GHz)和较宽的烧结温度(1150℃～1250℃)，同时该微波介质陶瓷具有负的谐振频率温度系数(‑76.6ppm/℃≤τf≤‑36.3ppm/℃)。该微波介质陶瓷的较低的烧结温度和优异的品质因数可使这种硅基低介微波介质材料应用于BME‑MLCC领域。

Description

一种硅基低介微波介质陶瓷及其制备方法
技术领域
本发明属于微波介质陶瓷技术领域，更具体地，涉及一种硅基低介微波介质陶瓷及其制备方法。
背景技术
微波介质陶瓷是指应用于微波频段(300MHz～300GHz)电路中作为介质的陶瓷材料。随着通信设备运行频率不断的提高，信号延迟现象会变得更加明显，***损耗和发热量也会随之增大，***稳定性会逐渐变差。而低介电常数能减小材料与电极之间的交互耦合损耗，并且能提高电信号的传输速率，优异的品质因数能减小***损耗且会提高材料的选频特性。考虑到环境友好和低成本等因数，硅基低介电常数的微波介质陶瓷的研究显得尤为重要。
多层陶瓷电容器(Multi-layer ceramic capacitors，简称MLCC)是一种广泛应用于表面贴装技术中的元器件，作为电子行业的基础原件，MLCC的需求量近年来以每年10％左右的递增，但MLCC的出口量90％以上都来自日本、美国等国家。MLCC按照内电极的种类可分为贵金属内电极多层陶瓷电容器(Precious Metal Electrode，简称PME-MLCC)和贱金属内电极多层陶瓷电容器(Base Metal Electrode，简称BME-MLCC)。PME-MLCC采用价格昂贵的Ag或Ag-Pd电极，可以在空气中烧结。而BME-MLCC通常采用相对廉价的Cu或Ni电极，BME-MLCC的价格相对较低但需要在还原性气氛中烧结。较低的生产成本和稳定的生产工艺是我国MLCC领域需要努力的目标。
为了制备出有竞争力的MLCC产品，研究出一种能抗还原(不含易变价元素)、价格低廉(富含Si、Ba、Ca等)且烧结温度在Cu或Ni电极熔点以下的微波介质陶瓷显得尤为重要。
发明内容
针对现有技术的以上缺陷或改进需求，本发明提供了一种化合物在制备微波介质陶瓷中的应用，拓宽了低介电常数的BME-MLCC微波介质陶瓷材料的选择范围。
为实现上述目的，按照本发明的一个方面，提供了一种化合物在制备微波介质陶瓷中的应用，该化合物的化学式为xBaO-yMO-zSiO2，其中M＝Ca,Sr；0<x≤1.0；1.0≤y≤2.0；1.0≤z≤3.0。
优选地，采用所述化合物制备得到的微波介质陶瓷的介电常数在7.3至11.0之间，品质因数Q×f为5370～40500GHz，谐振频率温度系数τf的范围为：-76.6ppm/℃≤τf≤-36.3ppm/℃。
优选地，按照如下方法制备得到所述微波介质陶瓷：
步骤(1)：按照化学表达式为xBaO-yMO-zSiO2的化学计量比称取BaCO3、CaCO3、SrCO3和SiO2，其中M为Ca或Sr，称量后湿法球磨处理，球磨后烘干，然后进行预烧，得到预烧陶瓷粉体；
步骤(2)：将步骤(1)得到的预烧陶瓷粉体，进行二次湿法球磨处理，烘干后加入粘合剂造粒，压片后进行烧结，获得所述微波介质陶瓷。
优选地，步骤(1)所述湿法球磨处理，湿法球磨分散剂为300wt％的去离子水和介质为锆球，球磨工艺为以360r/min的速度球磨5小时。
优选地，步骤(1)所述预烧的温度为1000℃～1100℃，预烧时间为5～10小时。
优选地，步骤(2)所述粘结剂为PVA或石蜡，粘合剂加入的质量分数为5％～10％。
优选地，步骤(2)所述烧结的温度为1150℃～1250℃，烧结时间为5～10小时。
总体而言，通过本发明所构思的以上技术方案与现有技术相比，能够取得下列有益效果：
(1)本发明将化学通式为xBaO-yMO-zSiO2(M＝Ca,Sr；0<x≤1.0；1.0≤y≤2.0；1.0≤z≤3.0)的化合物用于制备微波介质陶瓷材料，该新型微波介质陶瓷具有低介电常数和优异的品质因数，具有相成分单一、性能稳定的优点。
(2)本发明提供了一种不含易变价元素、原料成本低廉且烧结温度在Ni电极熔点以下的BME-MLCC用微波介质陶瓷。
附图说明
图1为本发明硅基低介微波介质陶瓷的制备流程图；
图2本发明硅基低介微波介质陶瓷的XRD图谱；
图3本发明硅基低介微波介质陶瓷的SEM图；
图4本发明硅基低介微波介质陶瓷样品与微波介电性能测试图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。此外，下面所描述的本发明各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以相互组合。
本发明提供了一种化合物在制备微波介质陶瓷中的应用，该化合物的化学式为xBaO-yMO-zSiO2，其中M＝Ca,Sr；0<x≤1.0；1.0≤y≤2.0；1.0≤z≤3.0。
将该化合物用于制备微波介质陶瓷时，所述微波介质陶瓷具有低介电常数和优异的品质因数(Q×f＝5370～40500GHz)，其介电常数范围较宽，在7.3至11.0之间，所述的微波介质陶瓷具有低介电常数的同时还具有负的谐振频率温度系数(-76.6ppm/℃≤τf≤-36.3ppm/℃)。
按照如下方法制备得到所述微波介质陶瓷：
步骤(1)：按照化学表达式为xBaO-yMO-zSiO2的化学计量比称取BaCO3、CaCO3、SrCO3和SiO2，其中M＝Ca,Sr；0<x≤1.0；1.0≤y≤2.0；1.0≤z≤3.0，称量后湿法球磨处理，球磨后烘干，然后进行预烧，得到预烧陶瓷粉体；
步骤(2)：将步骤(1)得到的预烧陶瓷粉体，进行二次湿法球磨处理，烘干后加入粘合剂造粒，压片后进行烧结，获得所述微波介质陶瓷。
作为一种具体实施方式，步骤(1)所述湿法球磨处理，湿法球磨分散剂为300wt％的去离子水和介质为锆球，球磨工艺为以360r/min的速度球磨5小时。
作为一种具体实施方式，步骤(1)所述预烧的温度为1000℃～1100℃，预烧时间为5～10小时，预烧的目的是得到陶瓷粉体的预烧相。
作为一种具体实施方式，步骤(2)所述粘结剂为PVA或石蜡，粘合剂加入的质量分数为5％～10％。
作为一种具体实施方式，步骤(2)所述烧结的温度为1150℃～1250℃，烧结时间为5～10小时。
本发明所制备的新型微波介质陶瓷具有低介电常数的同时还具有优异的综合微波介电性能。其中低介电常数的特性有利于提高电信号在介质材料中传输的速率，优异的综合微波介电性能减少了***工作的损耗并改善了稳定性，且不含易变价元素、原料成本低廉、烧结温度在Ni电极熔点以下，适用于BME-MLCC领域。
以下为实施例：
实施例1～5
一种微波介质陶瓷，其制备方法按照如下步骤进行：
(1)将分析纯的BaCO3、CaCO3、SrCO3和SiO2分别按照化学计量比配比混合后，以锆球为介质、去离子水为分散剂，利用球磨机将粉末混合搅拌5小时，转速为360r/min；将获得的浆料烘干后在1050℃下预烧5小时，得到预烧陶瓷粉体；
(2)将步骤(1)得到的预烧陶瓷粉体再次进行湿法球磨处理，分散剂采用去离子水，烘干后在干燥的粉末中加入8wt％的聚乙烯醇(PVA)粘接剂造粒，在150MPa压力下将其压制成厚度与直径比为0.4～0.6的圆柱形生坯试样；压片后在1150℃～1250℃的空气中烧结5小时，获得如表1所述的微波介质陶瓷。
表1实施例1～5、烧结温度及微波介电性能
Figure BDA0002957514330000051
从实施例1～5可以看出，该新型的硅基微波介质陶瓷材料具有低介电常数和较好的微波介电性能，其介电常数在7.30至11.0之间，品质因数在Q×f在5370～40500GHz之间，且相成分单一、不含易变价元素、烧结温度低于Ni电极熔点等，能应用于BME-MLCC领域。
本领域的技术人员容易理解，以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (6)

1.一种硅基低介微波介质陶瓷，其特征在于：包括陶瓷本体，所述陶瓷本体由化合物制备而成，该化合物的化学式为xBaO-yMO-zSiO2，其中M＝Ca,Sr；0<x≤1.0；1.0≤y≤2.0；1.0≤z≤3.0。
2.根据权利要求1所述的一种硅基低介微波介质陶瓷，其特征在于：采用所述化合物制备得到的微波介质陶瓷的介电常数在7.3至11.0之间，品质因数Q×f为5370～40500GHz，谐振频率温度系数τf的范围为：-76.6ppm/℃≤τf≤-36.3ppm/℃。
3.一种根据权利要求1所述的硅基低介微波介质陶瓷的制备方法，其特征在于，按照如下方法制备得到所述微波介质陶瓷：
步骤(1)：按照化学表达式为xBaO-yMO-zSiO2(M＝Ca,Sr；0<x≤1.0；1.0≤y≤2.0；1.0≤z≤3.0)的化学计量比称取BaCO3、CaCO3、SrCO3和SiO2，称量后湿法球磨处理，球磨后烘干，然后进行预烧，得到预烧陶瓷粉体；
步骤(2)：将步骤(1)得到的预烧陶瓷粉体，进行二次湿法球磨处理，烘干后加入粘合剂造粒，压片后进行烧结，获得所述微波介质陶瓷。
4.根据权利要求3所述一种硅基低介微波介质陶瓷的制备方法，其特征在于：步骤(1)、(2)所述的湿法球磨处理，球磨分散剂为300wt％的去离子水和介质为锆球，球磨工艺为以360r/min的速度球磨5小时。
5.根据权利要求3所述一种硅基低介微波介质陶瓷的制备方法，其特征在于：步骤(1)所述预烧的温度为1000℃～1100℃，预烧时间为5～10小时；步骤(2)所述烧结的温度为1150℃～1250℃，烧结时间为5～10小时。
6.根据权利要求3所述一种硅基低介微波介质陶瓷的制备方法，其特征在于：步骤(2)所述粘合剂含量为5～10wt％。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114634352A (zh) * 2022-03-08 2022-06-17 华中科技大学温州先进制造技术研究院 一种硅锗基低介微波介质陶瓷及其制备方法
CN115286375A (zh) * 2022-07-14 2022-11-04 桂林理工大学 低介电常数Ba-Ca-R-Si基微波介质陶瓷材料及其制备方法
CN115925401A (zh) * 2022-11-10 2023-04-07 华中科技大学 一种低介硅酸盐微波介质陶瓷材料及其制备方法
CN115947587A (zh) * 2022-09-30 2023-04-11 郴州功田电子陶瓷技术有限公司 一种低介电常数的微波介质陶瓷及其制备方法和应用
CN116217213A (zh) * 2023-02-20 2023-06-06 武汉纺织大学 超低介电常数的硅基微波介质陶瓷的制备方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1634798A (zh) * 2003-12-30 2005-07-06 广东风华高新科技集团有限公司 抗还原热补偿陶瓷介质材料及其制成的陶瓷电容器
CN1854105A (zh) * 2004-12-31 2006-11-01 电子科技大学 纳米级陶瓷材料掺杂剂、陶瓷电容器介质材料及二者的制备方法
CN101805172A (zh) * 2010-02-05 2010-08-18 华中科技大学 一种超低介电常数的微波介质陶瓷材料
CN101863655A (zh) * 2010-06-08 2010-10-20 杭州电子科技大学 一种微波介质陶瓷材料及其制备方法
CN102030477A (zh) * 2009-10-07 2011-04-27 旭硝子株式会社 陶瓷原料组合物
CN102214775A (zh) * 2010-04-02 2011-10-12 旭硝子株式会社 发光元件搭载基板及使用了该基板的发光装置
CN104496442A (zh) * 2014-11-27 2015-04-08 中国计量学院 一种低介电常数微波介质陶瓷粉体及其制备方法
US20160090529A1 (en) * 2013-05-23 2016-03-31 Merck Patent Gmbh Phosphors
CN106927804A (zh) * 2017-03-15 2017-07-07 华中科技大学 一种微波介质陶瓷温频特性调控剂及其ltcc材料
CN107637185A (zh) * 2015-06-29 2018-01-26 株式会社村田制作所 多层陶瓷基板以及多层陶瓷基板的制造方法
CN109320225A (zh) * 2018-09-30 2019-02-12 天津大学 一种超低介电损耗钙镁硅系微波介质陶瓷的制备方法
CN109928753A (zh) * 2019-03-14 2019-06-25 杭州电子科技大学 一种低介电常数硅基微波介质陶瓷材料及其制备方法
CN112279632A (zh) * 2020-10-31 2021-01-29 林玉婷 一种微波介电陶瓷及其制备方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1634798A (zh) * 2003-12-30 2005-07-06 广东风华高新科技集团有限公司 抗还原热补偿陶瓷介质材料及其制成的陶瓷电容器
CN1854105A (zh) * 2004-12-31 2006-11-01 电子科技大学 纳米级陶瓷材料掺杂剂、陶瓷电容器介质材料及二者的制备方法
CN102030477A (zh) * 2009-10-07 2011-04-27 旭硝子株式会社 陶瓷原料组合物
CN101805172A (zh) * 2010-02-05 2010-08-18 华中科技大学 一种超低介电常数的微波介质陶瓷材料
CN102214775A (zh) * 2010-04-02 2011-10-12 旭硝子株式会社 发光元件搭载基板及使用了该基板的发光装置
CN101863655A (zh) * 2010-06-08 2010-10-20 杭州电子科技大学 一种微波介质陶瓷材料及其制备方法
US20160090529A1 (en) * 2013-05-23 2016-03-31 Merck Patent Gmbh Phosphors
CN104496442A (zh) * 2014-11-27 2015-04-08 中国计量学院 一种低介电常数微波介质陶瓷粉体及其制备方法
CN107637185A (zh) * 2015-06-29 2018-01-26 株式会社村田制作所 多层陶瓷基板以及多层陶瓷基板的制造方法
CN106927804A (zh) * 2017-03-15 2017-07-07 华中科技大学 一种微波介质陶瓷温频特性调控剂及其ltcc材料
CN109320225A (zh) * 2018-09-30 2019-02-12 天津大学 一种超低介电损耗钙镁硅系微波介质陶瓷的制备方法
CN109928753A (zh) * 2019-03-14 2019-06-25 杭州电子科技大学 一种低介电常数硅基微波介质陶瓷材料及其制备方法
CN112279632A (zh) * 2020-10-31 2021-01-29 林玉婷 一种微波介电陶瓷及其制备方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114634352A (zh) * 2022-03-08 2022-06-17 华中科技大学温州先进制造技术研究院 一种硅锗基低介微波介质陶瓷及其制备方法
CN115286375A (zh) * 2022-07-14 2022-11-04 桂林理工大学 低介电常数Ba-Ca-R-Si基微波介质陶瓷材料及其制备方法
CN115947587A (zh) * 2022-09-30 2023-04-11 郴州功田电子陶瓷技术有限公司 一种低介电常数的微波介质陶瓷及其制备方法和应用
CN115947587B (zh) * 2022-09-30 2024-02-02 郴州功田电子陶瓷技术有限公司 一种微波介质陶瓷及其制备方法
CN115925401A (zh) * 2022-11-10 2023-04-07 华中科技大学 一种低介硅酸盐微波介质陶瓷材料及其制备方法
CN116217213A (zh) * 2023-02-20 2023-06-06 武汉纺织大学 超低介电常数的硅基微波介质陶瓷的制备方法
CN116217213B (zh) * 2023-02-20 2024-02-27 武汉纺织大学 超低介电常数的硅基微波介质陶瓷的制备方法

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