CN113003534A - Pressure sensor and preparation method thereof - Google Patents

Pressure sensor and preparation method thereof Download PDF

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Publication number
CN113003534A
CN113003534A CN202110205710.8A CN202110205710A CN113003534A CN 113003534 A CN113003534 A CN 113003534A CN 202110205710 A CN202110205710 A CN 202110205710A CN 113003534 A CN113003534 A CN 113003534A
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CN
China
Prior art keywords
sheet body
pressure sensor
metal layer
reducing gas
bonding
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110205710.8A
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Chinese (zh)
Inventor
赵雪龙
尹振
孟莹
李俊龙
徐杨
王盛凯
王英辉
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Kunshan Microelectronics Technology Research Institute
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Kunshan Microelectronics Technology Research Institute
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Application filed by Kunshan Microelectronics Technology Research Institute filed Critical Kunshan Microelectronics Technology Research Institute
Priority to CN202110205710.8A priority Critical patent/CN113003534A/en
Publication of CN113003534A publication Critical patent/CN113003534A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00Assembling of devices or systems from individually processed components
    • B81C3/001Bonding of two components
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00095Interconnects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00Measuring force or stress, in general
    • G01L1/18Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices

Abstract

The application discloses a pressure sensor and a preparation method thereof, wherein the method comprises the following steps: obtaining a first sheet body with a metal layer deposited on the surface; obtaining a second sheet body with a metal layer deposited on the surface; the second sheet body is provided with a groove; placing the first sheet body and the second sheet body aligned with the metal layer in a bonding chamber, and vacuumizing the bonding chamber; introducing reducing gas into the bonding chamber, and carrying out hot-press bonding on the first sheet body and the second sheet body under the atmosphere of the reducing gas to obtain a semi-finished product of the pressure sensor; and carrying out graphical processing and electrode preparation on the pressure sensor semi-finished product to obtain the pressure sensor. According to the method, the reducing gas is introduced into the bonding chamber, the reducing gas reduces the oxide on the surface of the metal layer, and the influence of the oxide on the bonding strength is effectively removed, so that the bonding strength is improved, and the air tightness of the cavity is improved; meanwhile, the reducing gas can also activate the surface of the metal layers, accelerate the bonding speed between the metal layers and reduce the temperature required by bonding.

Description

Pressure sensor and preparation method thereof
Technical Field
The application relates to the technical field of pressure sensors, in particular to a pressure sensor and a preparation method thereof.
Background
The pressure sensor of the micro electro mechanical system is a commonly used sensor and mainly comprises a force sensitive part and a signal conversion part, wherein the force sensitive part is used for sensing pressure, and the signal conversion part is used for converting a pressure signal into an electric signal.
Pressure sensors generally require a cavity structure to convert between pressure and a testable electrical signal, and therefore, the packaging process and quality of the cavity directly affect the performance of the pressure sensor. The mode of forming the cavity by sealing is various, and Cu-Cu hot-pressing bonding is well developed as a new sealing mode in recent years. However, Cu-Cu thermocompression bonding has a fatal problem that Cu is unstable and easily oxidized during a bonding process, resulting in low bonding strength and affecting airtightness of a cavity.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The application aims to provide a pressure sensor and a preparation method thereof, so that the strength of a bonding part of the pressure sensor and the air tightness of a cavity are improved, the bonding speed is increased, and the bonding temperature is reduced.
In order to solve the above technical problem, the present application provides a method for manufacturing a pressure sensor, including:
obtaining a first sheet body with a metal layer deposited on the surface;
obtaining a second sheet body with the metal layer deposited on the surface; the second sheet body is provided with a groove;
placing the first sheet body and the second sheet body which are aligned with the metal layer into a bonding chamber, and vacuumizing the bonding chamber;
introducing reducing gas into the bonding chamber, and carrying out hot-press bonding on the first sheet body and the second sheet body under the atmosphere of the reducing gas to obtain a semi-finished product of the pressure sensor;
and carrying out graphical processing and electrode preparation on the pressure sensor semi-finished product to obtain the pressure sensor.
Optionally, before the introducing the reducing gas into the bonding chamber, the method further includes:
carrying out catalytic treatment on the reducing gas by using a heated metal catalyst to obtain catalyzed reducing gas;
correspondingly, the step of introducing a reducing gas into the bonding chamber and performing thermocompression bonding on the first sheet body and the second sheet body in the atmosphere of the reducing gas includes:
and introducing the catalyzed reducing gas into the bonding chamber, and carrying out hot-press bonding on the first sheet body and the second sheet body under the atmosphere of the catalyzed reducing gas.
Optionally, the second sheet body with the metal layer deposited on the surface is obtained; the second blade having a groove comprising:
depositing the metal layer on the surface of the second sheet body to be processed;
and etching the second sheet body to be processed deposited with the metal layer to form the groove, so as to obtain the second sheet body.
Optionally, the second sheet body with the metal layer deposited on the surface is obtained; the second blade having a groove comprising:
etching the second sheet body to be processed to form the groove;
and depositing the metal layer on the surface of the to-be-processed second sheet body with the groove to obtain the second sheet body.
Optionally, the first sheet body and the second sheet body are any one of a wafer and an epitaxial wafer.
Optionally, when the first wafer body is an epitaxial wafer, the obtaining of the first wafer body with the metal layer deposited on the surface includes:
thinning the epitaxial wafer;
and depositing the metal layer on the surface of the epitaxial wafer after thinning to obtain the first sheet body.
Optionally, the reducing gas is any one or any combination of formic acid gas, hydrogen gas and acetic acid gas.
Optionally, the metal catalyst is any one or any combination of elemental platinum, platinum alloy, elemental palladium and palladium alloy.
Optionally, the metal layer is made of any one or any combination of the following materials:
copper, silver, nickel, aluminum, gold.
The application also provides a pressure sensor, and the pressure sensor is prepared by the preparation method of any one of the pressure sensors.
The application provides a pressure sensor preparation method, including: obtaining a first sheet body with a metal layer deposited on the surface; obtaining a second sheet body with the metal layer deposited on the surface; the second sheet body is provided with a groove; placing the first sheet body and the second sheet body which are aligned with the metal layer into a bonding chamber, and vacuumizing the bonding chamber; introducing reducing gas into the bonding chamber, and carrying out hot-press bonding on the first sheet body and the second sheet body under the atmosphere of the reducing gas to obtain a semi-finished product of the pressure sensor; and carrying out graphical processing and electrode preparation on the pressure sensor semi-finished product to obtain the pressure sensor.
Therefore, according to the preparation method of the pressure sensor, the metal layers of the first sheet body and the second sheet body are aligned and are arranged in the bonding chamber, the bonding chamber is vacuumized, and then reducing gas is introduced into the bonding chamber, the reducing gas can reduce the metal oxide on the surface of the metal layer, the influence of the metal oxide on the surface of the metal layer on the bonding strength is effectively removed, the bonding strength is improved, and the air tightness of the cavity is improved; meanwhile, the reducing gas can also activate the surface of the metal layers, accelerate the bonding speed between the metal layers and reduce the temperature required by bonding.
In addition, the application also provides a pressure sensor with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of a method for manufacturing a pressure sensor according to an embodiment of the present disclosure;
FIG. 2 is a flow chart of another method for manufacturing a pressure sensor according to an embodiment of the present disclosure;
fig. 3 to 12 are flow charts of a pressure sensor manufacturing process according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, the current Cu-Cu thermocompression bonding has a fatal problem that Cu is unstable and easily oxidized during the bonding process, resulting in low bonding strength and affecting the airtightness of the cavity.
In view of the above, the present application provides a method for manufacturing a pressure sensor, please refer to fig. 1, where fig. 1 is a flowchart of a method for manufacturing a pressure sensor according to an embodiment of the present application, the method includes:
step S101: obtaining the first sheet body with the metal layer deposited on the surface.
The material of the metal layer may be any one or any combination of copper, silver, nickel, aluminum and gold, and may be other materials that are stable and easily oxidized. The first body may be a wafer or an epitaxial wafer, and when the first body is a wafer, the material of the wafer may be silicon, silicon carbide, or the like.
Step S102: obtaining a second sheet body with the metal layer deposited on the surface; the second blade has a groove.
The second sheet body may be a wafer or an epitaxial wafer, and when the second sheet body is a wafer, the wafer may be made of silicon, silicon carbide, or the like. The opening of the groove is positioned in the metal layer and extends from the metal layer to the inside of the second sheet body. The metal layer of the second sheet body is made of the same material as the metal layer of the first sheet body.
Preferably, after obtaining the first sheet and the second sheet, before aligning the metal layers of the first sheet and the second sheet, the method further includes:
the surfaces of the first sheet body and the second sheet body are cleaned so as to remove organic matters and contamination on the surfaces of the first sheet body and the second sheet body and improve the performance of the pressure sensor.
Step S103: and placing the first sheet body and the second sheet body which are aligned with the metal layers into a bonding chamber, and vacuumizing the bonding chamber.
The purpose of vacuumizing is to remove oxygen in the bonding chamber and prevent the metal layer from being oxidized by gas in the bonding chamber.
Step S104: and introducing reducing gas into the bonding chamber, and carrying out hot-press bonding on the first sheet body and the second sheet body under the atmosphere of the reducing gas to obtain a semi-finished product of the pressure sensor.
It is to be noted that the reducing gas is not particularly limited in this application as the case may be. For example, the reducing gas may be any one or any combination of reducing gases such as formic acid gas, hydrogen gas, and acetic acid gas. After the first sheet body and the second sheet body are bonded, the groove becomes a cavity of the pressure sensor.
The flow rate of the reducing gas is generally set to 20cc/min to 60cc/min, depending on the thickness of the metal layer. The pressure during bonding is generally 3MPa, the surface of the metal layer is activated by introducing the reducing gas, compared with the bonding speed of the related technology, the bonding speed in the embodiment is accelerated, the bonding time is shortened, and the temperature required by bonding is reduced, wherein the temperature is generally 150-250 ℃.
After bonding is finished, stopping introducing the reducing gas and introducing inert gas, such as nitrogen, into the bonding chamber to discharge the reducing gas, and simultaneously avoiding reoxidizing the semi-finished product of the pressure sensor by air after the bonding chamber is opened to play a role in protection; and stopping pressurizing and heating, and cooling the pressure sensor semi-finished product.
Step S105: and carrying out graphical processing and electrode preparation on the pressure sensor semi-finished product to obtain the pressure sensor.
It should be noted that the patterning process and the electrode preparation are well known to those skilled in the art and will not be described in detail herein.
The process of obtaining the first panel and the second panel is further described below.
When the first sheet body is an epitaxial wafer, the obtaining of the first sheet body with the metal layer deposited on the surface comprises:
step S1011: and thinning the epitaxial wafer.
Specifically, the epitaxial wafer is fixed on a support wafer and subjected to CMP (Chemical Mechanical Polishing) to complete the thinning process, thereby forming a pressure-sensitive film.
Step S1012: and depositing the metal layer on the surface of the epitaxial wafer after thinning to obtain the first sheet body.
The metal layer may be deposited by a physical deposition method, a chemical deposition method, or a combination of physical deposition and chemical deposition, wherein the physical deposition method may be a sputtering method, an electroplating method, an evaporation method, or the like, and the chemical deposition method may be a chemical vapor deposition method, a plasma-enhanced chemical vapor deposition method, or the like.
The second sheet body with the metal layer deposited on the surface is obtained; the second sheet body is provided with a groove, and two realization modes can be provided as an embodiment mode:
step S1021: and depositing the metal layer on the surface of the second sheet body to be processed.
The metal layer may be deposited by a physical deposition method, a chemical deposition method, or a combination of physical deposition and chemical deposition, wherein the physical deposition method may be a sputtering method, an electroplating method, an evaporation method, or the like, and the chemical deposition method may be a chemical vapor deposition method, a plasma-enhanced chemical vapor deposition method, or the like.
Step S1022: and etching the second sheet body to be processed deposited with the metal layer to form the groove, so as to obtain the second sheet body.
The etching manner may be a physical etching method, a chemical etching method, or a method combining physical etching and chemical etching, wherein the physical etching method may be plasma etching, Inductively Coupled Plasma (ICP), Reactive Ion Etching (RIE), or the like; the chemical etching method may be wet etching or the like.
As another possible embodiment, the second sheet body with the metal layer deposited on the surface is obtained; the second blade having a groove comprising:
step S1023: and etching the second sheet body to be processed to form the groove.
Step S1024: and depositing the metal layer on the surface of the to-be-processed second sheet body with the groove to obtain the second sheet body.
The etching and deposition methods can be referred to the above description and will not be described in detail herein.
According to the preparation method of the pressure sensor, the metal layers of the first sheet body and the second sheet body are aligned and are arranged in the bonding chamber, the bonding chamber is vacuumized, and then reducing gas is introduced into the bonding chamber, the reducing gas can reduce the metal oxide on the surface of the metal layer, so that the influence of the metal oxide on the surface of the metal layer on the bonding strength is effectively removed, the bonding strength is improved, and the air tightness of the cavity is improved; meanwhile, the reducing gas can also activate the surface of the metal layers, accelerate the bonding speed between the metal layers and reduce the temperature required by bonding.
Referring to fig. 2, fig. 2 is a flowchart illustrating another method for manufacturing a pressure sensor according to an embodiment of the present disclosure, the method including:
step S201: obtaining the first sheet body with the metal layer deposited on the surface.
Step S202: obtaining a second sheet body with the metal layer deposited on the surface; the second blade has a groove.
Step S203: and placing the first sheet body and the second sheet body which are aligned with the metal layers into a bonding chamber, and vacuumizing the bonding chamber.
Step S204: and carrying out catalytic treatment on the reducing gas by using the heated metal catalyst to obtain the catalyzed reducing gas.
The metal catalyst is not particularly limited in the present application and may be selected. For example, the metal catalyst is any one or any combination of elemental platinum, platinum alloy, elemental palladium and palladium alloy.
The metal catalyst is heated and the reducing gas is caused to flow through the metal catalyst to catalyze the reducing gas. Preferably, the metal catalyst is in a mesh shape, and increases a contact area of the metal catalyst with the reducing gas, thereby enhancing a catalytic effect.
Step S205: and introducing the catalyzed reducing gas into the bonding chamber, and carrying out hot-press bonding on the first sheet body and the second sheet body under the atmosphere of the catalyzed reducing gas to obtain a semi-finished product of the pressure sensor.
Step S206: and carrying out graphical processing and electrode preparation on the pressure sensor semi-finished product to obtain the pressure sensor.
In this embodiment, the activation effect on the surface of the metal layer can be further enhanced by introducing the catalyzed reducing gas into the bonding chamber, so that the temperature required for bonding is further reduced, and the bonding speed is increased.
The application also provides a pressure sensor, and the pressure sensor is prepared by the pressure sensor preparation method of any one of the embodiments.
The method for manufacturing the pressure sensor in the present application is further described below by taking the material of the metal layer as copper, the first sheet body as an epitaxial wafer, and the second sheet body as a wafer.
Step 1, preparing an epitaxial wafer, referring to fig. 3, including a wafer 1 and an epitaxial layer 2; then, the epitaxial wafer is fixed on the support wafer to perform CMP grinding and polishing, and the thinning operation is completed to manufacture the pressure-sensitive film, as shown in fig. 4.
And 2, depositing a Cu metal layer 3 on the surface of the thinned epitaxial wafer, as shown in FIG. 5.
Step 3, preparing a wafer 5 as shown in fig. 6, and depositing a Cu metal layer 3 on the surface of the wafer 1 as shown in fig. 7.
And 4, etching the wafer 5 on which the Cu metal layer 3 is deposited to etch a groove 4 required by the pressure sensor, and referring to fig. 8.
And 5, cleaning the surfaces of the epitaxial wafer with the Cu metal layer and the etched wafer with the Cu metal layer to remove other organic matters and contaminants on the surfaces.
Step 6, aligning the epitaxial wafer with the Cu metal layer 3 of the wafer, then placing the epitaxial wafer into a bonding chamber, and vacuumizing to remove residual oxygen in the bonding chamber; opening a heating source of the platinum net to heat the platinum net, setting the flow rate of formic acid gas, and introducing formic acid gas catalyzed by the platinum net as shown in FIG. 9; setting heating and pressurizing parameters and setting bonding time, and starting a pressurizing and heating device; to set the bonding timeStopping introducing formic acid gas after the reaction is finished, and introducing N2A gas; and stopping heating and pressurizing, and cooling the bonded semi-finished product of the pressure sensor, wherein the schematic diagram after bonding is shown in fig. 10.
Step 7, taking out the pressure sensor semi-finished product, carrying out epitaxial layer imaging, and manufacturing a piezoresistive pattern as shown in fig. 11; finally, the electrode preparation is completed, and as shown in fig. 12, the subsequent packaging is carried out.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The pressure sensor and the method for manufacturing the same provided by the present application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.

Claims (10)

1. A method of making a pressure sensor, comprising:
obtaining a first sheet body with a metal layer deposited on the surface;
obtaining a second sheet body with the metal layer deposited on the surface; the second sheet body is provided with a groove;
placing the first sheet body and the second sheet body which are aligned with the metal layer into a bonding chamber, and vacuumizing the bonding chamber;
introducing reducing gas into the bonding chamber, and carrying out hot-press bonding on the first sheet body and the second sheet body under the atmosphere of the reducing gas to obtain a semi-finished product of the pressure sensor;
and carrying out graphical processing and electrode preparation on the pressure sensor semi-finished product to obtain the pressure sensor.
2. The method of making a pressure sensor of claim 1, further comprising, prior to said introducing a reducing gas into said bonding chamber:
carrying out catalytic treatment on the reducing gas by using a heated metal catalyst to obtain catalyzed reducing gas;
correspondingly, the step of introducing a reducing gas into the bonding chamber and performing thermocompression bonding on the first sheet body and the second sheet body in the atmosphere of the reducing gas includes:
and introducing the catalyzed reducing gas into the bonding chamber, and carrying out hot-press bonding on the first sheet body and the second sheet body under the atmosphere of the catalyzed reducing gas.
3. The method of manufacturing a pressure sensor of claim 1, wherein the obtaining a second sheet having the metal layer deposited on a surface thereof; the second blade having a groove comprising:
depositing the metal layer on the surface of the second sheet body to be processed;
and etching the second sheet body to be processed deposited with the metal layer to form the groove, so as to obtain the second sheet body.
4. The method of manufacturing a pressure sensor of claim 1, wherein the obtaining a second sheet having the metal layer deposited on a surface thereof; the second blade having a groove comprising:
etching the second sheet body to be processed to form the groove;
and depositing the metal layer on the surface of the to-be-processed second sheet body with the groove to obtain the second sheet body.
5. The method for manufacturing a pressure sensor according to claim 1, wherein the first sheet body and the second sheet body are any one of a wafer and an epitaxial wafer.
6. The method of making a pressure sensor of claim 5, wherein when the first sheet is an epitaxial wafer, the obtaining a first sheet with a metal layer deposited on a surface thereof comprises:
thinning the epitaxial wafer;
and depositing the metal layer on the surface of the epitaxial wafer after thinning to obtain the first sheet body.
7. The method for preparing a pressure sensor according to claim 1, wherein the reducing gas is any one of or any combination of formic acid gas, hydrogen gas and acetic acid gas.
8. The method for preparing a pressure sensor according to claim 2, wherein the metal catalyst is any one or any combination of elemental platinum, platinum alloy, elemental palladium and palladium alloy.
9. The method for manufacturing a pressure sensor according to any one of claims 1 to 8, wherein the material of the metal layer is any one or any combination of the following materials:
copper, silver, nickel, aluminum, gold.
10. A pressure sensor produced by the pressure sensor production method according to any one of claims 1 to 9.
CN202110205710.8A 2021-02-24 2021-02-24 Pressure sensor and preparation method thereof Pending CN113003534A (en)

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