CN112993753B - Monolithic integrated waveguide device and integrated semiconductor chip thereof - Google Patents
Monolithic integrated waveguide device and integrated semiconductor chip thereof Download PDFInfo
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- CN112993753B CN112993753B CN202110176830.XA CN202110176830A CN112993753B CN 112993753 B CN112993753 B CN 112993753B CN 202110176830 A CN202110176830 A CN 202110176830A CN 112993753 B CN112993753 B CN 112993753B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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Abstract
The present invention provides a monolithically integrated waveguide device comprising a laser section comprising a wavelength selective element and a modulator section comprising a laser waveguide and a modulator waveguide, respectively, in which an optical mode propagates, the modulator section being adapted for modulating phase and/or amplitude. The monolithic integrated waveguide device adopts a monolithic device and consists of a plurality of laser sections, and each laser section is provided with an independent laser bar; or a dev monolithic device consisting of a plurality of laser segments and a plurality of modulator segments for modulating the phase is adopted and is formed on the same chip together. An integrated semiconductor chip comprising: a monolithic integrated waveguide device having a plurality of segments angled from the front and rear mirrors, and a front and rear mirror, the laser emitted by the laser segment being directly coupled to the modulator segment.
Description
Technical Field
The invention relates to the field of semiconductor parts and chips, in particular to a monolithic integrated waveguide device and an integrated semiconductor chip thereof.
Background
It is well known that dc modulation of semiconductor laser diodes mainly results in variations in the intensity of the light output. By directly modulating the semiconductor laser diode, optical fiber signal transmission in digital and analog formats up to several Gbs or GHz can be easily achieved. Various nonlinear effects limit the transmission of fiber optic signals, one of which is wavelength chirp.
The wavelength chirp during current modulation affects all semiconductor lasers to different extents, even for lasers such as DFB, DBR lasers, whose internal wavelength selective elements are specified to emit at a single wavelength. When this wavelength chirped optical output from a laser is passed through a dispersive medium, such as an optical fiber, the combination of laser chirp and medium dispersion may result in increased signal distortion of the analog signal or an increased bit error rate of the digital signal. These adverse effects limit transmission distance and signal speed.
Monolithically integrated devices, such as electro-absorption modulated lasers (EMLs), solve the partial wavelength chirp problem. In this device, the laser segments are CW biased to emit light of constant intensity. Because the laser is unmodulated, the emission has little or no chirp. The RF voltage applied to the integrated modulator changes the degree of absorption of the laser to form the modulated signal. However, EML is not suitable for analog signals due to the high non-linearity of the electroabsorption effect.
For transmitting analog signals in optical fibers, directly modulated lasers are still the most common. As the lasing wavelength approaches zero dispersion of the fiber, the transmitted signal will retain its fidelity. However, if the laser wavelength is far from the zero dispersion point, the transmitted signal is distorted due to the interaction of the laser chirp and the fiber dispersion.
Various schemes for compensating for distortion caused by dispersion have been proposed, such as using dispersion compensating fibers, predistortion compensation circuits and external phase modulators. For example, Iannelli et al in application 11/080721 propose a method of canceling the chirp of a source semiconductor laser using a discrete phase modulator and control electronics. Ramachandran et al, in application number 11/800,063, propose a WDM system in which the wavelength acoustic outputs from multiple lasers are combined and then compensated by separate phase modulators. Both systems rely on combining commonly used discrete components and using them in a novel manner. However, the discrete components of the present integrated device cannot be used with the accompanying circuit, and therefore cannot introduce the compensation effect of the operating phase while generating the optical output without wavelength chirp, and cannot make the phase modulator have the characteristic of low distortion after propagating in a long length of optical fiber.
Disclosure of Invention
The present invention aims to provide a monolithically integrated waveguide device comprising a laser section 1 and a modulator section 2, wherein the laser section 1 comprises a wavelength selective element 11, the laser section 1 and the modulator section 2 comprise a laser waveguide 12 and a modulator waveguide 22, respectively, an optical mode both propagating within the laser waveguide 12 and the modulator waveguide 22, and the modulator section 2 is used for modulating phase and/or amplitude.
Preferably, the wavelength selective element 11 is a built-in laser grating.
Preferably, the laser waveguide 12 and the modulator waveguide 22 are formed based on a plurality of quantum wells or semiconductor, strained or unstrained, and the laser waveguide 12 and the modulator waveguide 22 and the active regions of the laser segment 1 and modulator segment 2 share a portion of a common layer, or are constructed from completely different layers using epitaxial growth techniques such as selective area epitaxy or butt-junction epitaxy. The laser waveguide 12 and the modulator waveguide 22 are physically aligned so that the optical output of the laser section 1 enters the modulator section 2 with minimal loss, the modulator waveguide 22 has a higher bandgap than the active region of the laser section 1, and the modulator waveguide 22 is a buried heterostructure or a ridge waveguide structure.
Preferably, an electrical isolation element 3 is arranged between the modulator section 2 and the laser section 1, and the electrical isolation element 3 is electrically isolated by using a process of ion bombardment or trench etching.
Preferably, the facet at the end of the modulator section 2 is an anti-reflection antireflection film front facet 22, which is a position for light signal transmission and has an antireflection coating, and the modulator waveguide 21 is angled at the end of the modulator section 2; the facet at the tail end of the laser section 1 is a high-reflection antireflection film rear facet 13, and high-reflection coating, no coating or antireflection coating is carried out on the high-reflection antireflection film rear facet 13.
Preferably, the laser section 1 and modulator section 2 build a material system of ingaas material on an ingaas substrate, the laser section 1 being arranged on an ITU grid to emit at discrete wavelengths.
Preferably, the modulator section 2 has phase adjustment contact pads, and the wavelength chirp of the laser is cancelled by sending an appropriate signal to the phase adjustment contact pads in the modulator section 2, which is derived from the input radio frequency signal by an external signal conditioning circuit 4; alternatively, a large amount of phase information is added to the intensity modulation by injecting an RF signal into the phase adjusting contact pad.
Preferably, the monolithically integrated waveguide device is a monolithic device, consisting of a plurality of laser segments 1, each laser segment 1 having an independent laser stripe, the light from the plurality of laser segments 1 being combined into a single modulator waveguide 21 comprising a modulator segment 2 for phase modulation using a combiner combining a plurality of laser waveguides 12, each laser segment 1 operating at a different wavelength, producing an output comprising a plurality of ITU wavelength channels.
Preferably, the monolithic integrated waveguide device is a monolithic device, the monolithic device is composed of a plurality of laser sections 1 and a plurality of modulator sections 2 for modulating phase, and the laser sections 1 and the modulator sections 2 are formed on the same chip, light from the laser sections 1 and the modulator sections 2 is combined into one output waveguide through a waveguide combiner, each laser section 1 and modulator section 2 operates at different wavelengths, and the generated output comprises a plurality of ITU wavelength channels.
It is also an object of the present invention to provide an integrated semiconductor chip comprising: the monolithic waveguide device comprises a monolithic waveguide device and a front and back view mirror, wherein the monolithic waveguide device is provided with a plurality of sections which form a certain angle with the front and back view mirror, the plurality of sections comprise a laser section 1 and a modulator section 2, the monolithic waveguide device further comprises a laser waveguide 12 of the laser section 1 and a modulator waveguide 21 of the modulator section 2, and laser emitted by the laser section 1 is directly coupled to the modulator section 2.
The working principle is as follows: a directly modulated signal is injected into the laser section 1, a separate signal is injected into the modulator section 2, and the adjustment signal from the directly modulated signal to the laser section 1 is injected into the phase modulator of the modulator section 2, thereby producing an optical output free of wavelength chirp, and due to the compensation effect of the operating phase, the phase modulator has low distortion characteristics after propagating in a long length of fiber.
The invention has the beneficial effects that:
the integrated device is used with accompanying circuitry to introduce a compensation effect on the operating phase while producing an optical output free of wavelength chirp, so that the phase modulator has low distortion characteristics after propagation over a long length of optical fiber.
The above and other objects, advantages and features of the present invention will become more apparent to those skilled in the art from the following detailed description of specific embodiments thereof, taken in conjunction with the accompanying drawings.
Drawings
Some specific embodiments of the invention will be described in detail hereinafter, by way of illustration and not limitation, with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily drawn to scale. The objects and features of the present invention will become more apparent in view of the following description taken in conjunction with the accompanying drawings, in which:
fig. 1 is a schematic structural diagram of a monolithically integrated waveguide device according to an embodiment of the present invention.
Detailed Description
The basic idea of this embodiment is a monolithically integrated waveguide device comprising a plurality of segments and electrodes, which can be used to generate amplitude and phase modulated laser output. Depending on the way the electrical signal is applied to the individual electrodes, this device can only produce an intensity modulated (zero chirp) signal. Alternatively, in other preferred embodiments, the apparatus may be caused to generate a signal that conveys information encoded by amplitude and phase.
An exemplary apparatus according to a first embodiment of the invention is shown in fig. 1. The optical modulator comprises a laser section 1 and a modulator section 2, wherein the laser section 1 includes a wavelength selective element 11, in the embodiment, a built-in laser grating is adopted as the wavelength selective element 11, and of course, a person skilled in the art can select other common wavelength selective elements 11. The laser section 1 and modulator section 2 contain a laser waveguide 12 and a modulator waveguide 22, respectively, and the optical modes both propagate within the laser waveguide 12 and modulator waveguide 22. As a preferred embodiment, the laser waveguide 12 and modulator waveguide 22 are formed based on strained or unstrained multiple quantum wells or a semiconductor. The laser waveguides 12 and modulator waveguides 22 of laser section 1 and modulator section 2 and the active area share part of a common layer or are constructed from completely different layers using epitaxial growth techniques such as selective area epitaxy or butt-joint epitaxy. The laser waveguide 12 and modulator waveguide 22 are physically aligned so that the optical output of the laser section 1 enters the modulator section 2 with minimal loss. The modulator section 2 is used for modulating the phase. Furthermore, an electrical isolation element 3 is arranged between the modulator section 2 and the laser section 1 to prevent cross-talk between the two sections. In this embodiment, the electrical isolation element 3 uses a process such as ion bombardment or trench etching to achieve electrical isolation.
The modulator waveguides 22 of modulator section 2 have a significantly higher bandgap than the active region of laser section 1. This is in contrast to EML devices, where the band gap of the electro-absorption part is designed to be close to the laser wavelength and to operate in absorption mode. The modulator waveguide 22 is further formed in a suitable structure, such as a buried heterostructure or a ridge waveguide structure. Of course, other reasonable forms of waveguides can be used by those skilled in the art.
The Facet at the end of the modulator is the anti-reflective anti-reflection film Front Facet 22AR Coated Front face, which is the location where the optical signal is emitted, with an anti-reflection coating. The modulator waveguides 21 are angled at the modulator ends to further reduce the reflection at the front facet 22 of the anti-reflection coating. Light emitted from the anti-reflective antireflection film front facet 22 is suitable for coupling into a single mode optical fiber.
The Facet at the tail end of the laser section is a high-reflection antireflection film rear Facet 13HR Coated Back face, and the Facet is subjected to high-reflection coating to increase the output power, or no coating or an antireflection film is used.
The modulator section 2 is biased to cause a change in the refractive index in the modulator waveguide 22, mainly by the electro-optic effect. As the signal propagates in modulator waveguide 22, the change in refractive index causes a phase delay in the signal. This is in sharp contrast to EML. The modulator section 2 in the device of the present embodiment is designed not to absorb the emitted light from the laser section 1, whereas the modulator in the EML is designed to absorb the emitted light from the laser section.
In a first exemplary arrangement, the laser section 1 and the modulator section 2 are built on a suitable material system, for example a material system consisting of an ingaas material on an ingaas substrate. The laser wavelength can cover the optical fiber communication range of 1100 nm to 1650 nm. The laser section 1 may be designed to emit at discrete wavelengths on the ITU grid.
In another embodiment of the invention the laser segment 1 is directly modulated by an analog radio frequency signal. The laser light from the laser passes through modulator section 2 phase adjusting part of modulator waveguide 21. The modulator section 2 has phase adjusting contact pads. By sending appropriate signals to the phase adjusting contact pads in the modulator section 2, the wavelength chirp of the laser can be cancelled.
Suitable signals may be derived from the input radio frequency signal by external signal conditioning circuitry 4. The removal of chirp results in a chirp-free optical output, which is required for fiber optic networks designed for the transmission of analog radio frequency signals.
Alternatively, a large amount of phase information is added to the intensity modulation by injecting an RF signal into the phase adjusting contact pad. This feature may increase the amount of information that may be transmitted, as may be required by other particular fiber optic network systems that require more signal input. In the device of this embodiment, the individual segments and contacts, matched waveguides, etc. can be implemented by standard processing techniques. However, it is the monolithic integration of the laser section 1 and the phaser modulation section 2, and the method of using the integrated device with accompanying circuitry, that gives the present embodiment unique characteristics and achieves significant technical results.
A second preferred embodiment of the invention consists in using a monolithic device consisting of a plurality of laser segments 1, each laser segment 1 having a separate laser stripe. Light from multiple laser sections 1 is combined into a single modulator waveguide 21 comprising a modulator section 2 for phase modulation using a combiner that combines multiple laser waveguides 12. Each laser segment 1 operates at a different wavelength and so the output produced contains a plurality of ITU wavelength channels.
A third preferred embodiment of the invention is to use a monolithic device consisting of a plurality of laser sections 1 and a plurality of modulator sections 2 for modulating the phase, which are formed together on the same chip. From the plurality of laser sections 1 and the plurality of modulator sections 2, there are respectively waveguides, by means of which the light is combined into one output waveguide. Each laser section 1 and modulator section 2 operates at a different wavelength and the output produced thereby comprises a plurality of ITU wavelength channels. An integrated semiconductor chip formed in accordance with the above embodiments includes: the monolithic waveguide device comprises a monolithic waveguide device and a front and back view mirror, wherein the monolithic waveguide device is provided with a plurality of sections which form a certain angle with the front and back view mirror, the plurality of sections comprise a laser section 1 and a modulator section 2, the monolithic waveguide device further comprises a laser waveguide 12 of the laser section 1 and a modulator waveguide 21 of the modulator section 2, and laser emitted by the laser section 1 is directly coupled to the modulator section 2.
As a preferred embodiment, the directly modulated signal is injected into the laser section 1 and the separate signal is injected into the modulator section 2. The working principle is as follows: the adjustment signal from the direct modulation signal to the laser section 1 is injected into the phase modulator of the modulator section 2 to produce an optical output free of wavelength chirp and which, due to the compensation effect of the operating phase, has low distortion characteristics after propagation over a long length of optical fibre.
While the present invention has been described with reference to the particular illustrative embodiments, it is not to be restricted by the embodiments but only by the appended claims. It will be understood by those skilled in the art that variations and modifications of the embodiments of the present invention can be made without departing from the scope and spirit of the invention.
Claims (9)
1. A monolithically integrated waveguide device, characterized by: comprising a laser section (1) and a modulator section (2), wherein the laser section (1) comprises a wavelength selective element (11), the laser section (1) and the modulator section (2) comprise a laser waveguide (12) and a modulator waveguide (21), respectively, an optical mode both propagating within the laser waveguide (12) and the modulator waveguide (21), the modulator waveguide (21) having a higher bandgap than an active area of the laser section (1); the modulator section (2) is used for modulating the phase, the modulator waveguide (21) being a buried heterostructure or a ridge waveguide structure; the laser section (1) is directly modulated by a radio frequency signal, from which the signal for the modulator section (2) is derived by an external signal conditioning circuit (4), so that the wavelength chirp of the laser is cancelled; the small plane at the tail end of the modulator section (2) is an anti-reflection antireflection film front small plane (22), the small plane is a position for transmitting an optical signal and is provided with an antireflection coating, and the modulator waveguide (21) forms a certain angle at the tail end of the modulator section (2); the facet at the tail end of the laser section (1) is a high-reflection antireflection film rear facet (13), and high-reflection coating is carried out on the high-reflection antireflection film rear facet (13).
2. A monolithically integrated waveguide device of claim 1, wherein: the wavelength selection element (11) is a built-in laser grating.
3. A monolithically integrated waveguide device of claim 1, wherein: the laser waveguide (12) and the modulator waveguide (21) are formed based on a plurality of quantum wells or a semiconductor, strained or unstrained, the laser waveguide (12) and the modulator waveguide (21) and the active regions of the laser and modulator segments (1, 2) sharing part of a common layer, or being built from completely different layers using epitaxial growth techniques such as selective area epitaxy or butt-joint epitaxy;
the laser waveguide (12) and the modulator waveguide (21) are physically aligned so that the optical output of the laser section (1) enters the modulator section (2) with minimal loss.
4. A monolithically integrated waveguide device of claim 1, wherein: an electrical isolation element (3) is arranged between the modulator section (2) and the laser section (1), the electrical isolation element (3) being electrically isolated using a process of ion bombardment or trench etching.
5. A monolithically integrated waveguide device of claim 1, wherein: the laser section (1) and modulator section (2) build a material system of indium gallium arsenide phosphide material on an indium phosphide substrate, the laser section (1) being arranged on an ITU grid to emit at discrete wavelengths.
6. A monolithically integrated waveguide device of claim 1, wherein: the modulator section (2) has phase adjustment contact pads.
7. A monolithically integrated waveguide device of claim 1, wherein: the monolithically integrated waveguide device is a monolithic device consisting of a plurality of laser segments (1), each laser segment (1) having an independent laser bar, light from the plurality of laser segments (1) being combined into a single modulator waveguide (21) comprising a modulator segment (2) for phase modulation using a combiner combining a plurality of laser waveguides (12), each laser segment (1) operating at a different wavelength, the output produced comprising a plurality of ITU wavelength channels.
8. A monolithically integrated waveguide device of claim 1, wherein: the monolithic integrated waveguide device adopts a monolithic device, the monolithic device is composed of a plurality of laser sections (1) and a plurality of modulator sections (2) for modulating phases and is formed on the same chip together, light from the laser sections (1) and the modulator sections (2) is combined into an output waveguide through a waveguide combiner, each laser section (1) and modulator section (2) work under different wavelengths, and the generated output comprises a plurality of ITU wavelength channels.
9. An integrated semiconductor chip comprising: a monolithically integrated waveguide device as claimed in any of claims 1-8 and a front-view mirror, wherein the monolithically integrated waveguide device has a plurality of sections, at an angle to the front-view mirror, the plurality of sections comprising a laser section (1) and a modulator section (2), the monolithically integrated waveguide device further comprising a laser waveguide (12) provided by the laser section (1) and a modulator waveguide (21) provided by the modulator section (2), the laser light emitted by the laser section (1) being directly coupled to the modulator section (2).
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| CN202110176830.XA CN112993753B (en) | 2021-02-07 | 2021-02-07 | Monolithic integrated waveguide device and integrated semiconductor chip thereof |
| PCT/CN2021/079322 WO2022165901A1 (en) | 2021-02-07 | 2021-03-05 | Monolithic integrated waveguide device and integrated semiconductor chip thereof |
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| CN202110176830.XA CN112993753B (en) | 2021-02-07 | 2021-02-07 | Monolithic integrated waveguide device and integrated semiconductor chip thereof |
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| GB9523731D0 (en) * | 1995-11-20 | 1996-01-24 | British Telecomm | Optical transmitter |
| AU766362B2 (en) * | 1999-09-03 | 2003-10-16 | Regents Of The University Of California, The | Tunable laser source with integrated optical modulator |
| GB0206204D0 (en) * | 2002-03-15 | 2002-05-01 | Denselight Semiconductors Pte | Direct modulation of laser diode with chirp control |
| US20060104321A1 (en) * | 2004-11-15 | 2006-05-18 | Lightip Technologies Inc. | Q-modulated semiconductor laser with electro-absorptive grating structures |
| US7502394B2 (en) * | 2004-12-03 | 2009-03-10 | Corning Incorporated | System and method for modulating a semiconductor laser |
| CN100570969C (en) * | 2008-01-18 | 2009-12-16 | 清华大学 | Photoproduction microwave single slice photon integrated device based on the injection locking of FP laser |
| CN102393593B (en) * | 2011-06-30 | 2013-08-07 | 北京邮电大学 | Ultra-short pulse light source generating device |
| CN104412468B (en) * | 2012-06-25 | 2018-04-24 | 韩国科学技术院 | Wavelength keeps fabry-Perot laser diode and the optical transmitter including the laser diode |
| US9306672B2 (en) * | 2013-03-14 | 2016-04-05 | Encore Corporation | Method of fabricating and operating an optical modulator |
| CN103956652B (en) * | 2014-04-25 | 2018-08-31 | 南京威宁锐克信息技术有限公司 | The tunable DFB semiconductor laser of low cost and preparation method of integrated modulator |
| US9762028B2 (en) * | 2015-01-06 | 2017-09-12 | Applied Optoelectronics, Inc. | Two-section semiconductor laser with modulation-independent grating section to reduce chirp |
| CN105846312A (en) * | 2015-01-12 | 2016-08-10 | 南京大学（苏州）高新技术研究院 | Monolithic integration double-segment type DFB semiconductor laser and array |
| JP6470127B2 (en) * | 2015-06-24 | 2019-02-13 | 日本電信電話株式会社 | Optical modulation signal generator |
| CN104993375A (en) * | 2015-06-24 | 2015-10-21 | 华中科技大学 | Distributed feedback laser with short cavity length |
| CN108649427B (en) * | 2018-05-10 | 2020-09-01 | 常州工学院 | High-efficiency lasing output DFB semiconductor laser device and photon integrated emission chip |
| CN110911948A (en) * | 2019-11-29 | 2020-03-24 | 西安奇芯光电科技有限公司 | Chirp management laser based on hybrid integration technology |
| CN111245520A (en) * | 2020-02-17 | 2020-06-05 | 北京理工大学 | Linear coherent receiving system of composite light phase-locked loop based on acousto-optic modulator |
| CN112038888B (en) * | 2020-08-05 | 2021-10-26 | 南京大学 | Semiconductor laser of integrated waveguide grating modulator |
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