CN112993584A - Intelligent stealth super surface capable of sensing electromagnetic energy - Google Patents
Intelligent stealth super surface capable of sensing electromagnetic energy Download PDFInfo
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- CN112993584A CN112993584A CN202110160956.8A CN202110160956A CN112993584A CN 112993584 A CN112993584 A CN 112993584A CN 202110160956 A CN202110160956 A CN 202110160956A CN 112993584 A CN112993584 A CN 112993584A
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- 230000010287 polarization Effects 0.000 description 6
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/004—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective using superconducting materials or magnetised substrates
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Abstract
The invention relates to an intelligent stealth super surface capable of sensing electromagnetic energy. The stealth super surface detects the electromagnetic property of incident waves incident on the super surface by using an energy sensing module and feeds the electromagnetic property back to a microcontroller; the microcontroller controls the voltage value of the PIN diode according to the electromagnetic characteristic so as to switch the working state of the super surface; the working state comprises a communication state and a stealth state. The invention can switch the stealth state and the communication state in real time.
Description
Technical Field
The invention relates to the field of stealth super surfaces, in particular to an intelligent stealth super surface capable of sensing electromagnetic energy.
Background
The electromagnetic wave stealth is used as a technology which can prevent an object from being identified by an electromagnetic wave detector or human eyes, and has important research value in the technical fields of military, aerospace, ocean and the like. In the last two decades, the emergence of metamaterials and transformation optics has injected new vitality into the traditional electromagnetic stealth field and is rapidly a research hotspot in the electromagnetic field of the 21 st century. The current stealth technologies are mainly classified into four categories: simulating to hide; invisible illusion; stealth around waves; and wave-absorbing stealth. The traditional wave-absorbing stealth is realized by coating a wave-absorbing layer on the surface of an object and combining a special appearance design to reduce a radar scattering cross section, the wave-absorbing stealth with a super-surface design and a traditional structure can only absorb waves in a pass band to realize stealth, wave transmission outside the pass band is realized to realize communication, the stealth and the communication are not in the same frequency band, the stealth state and the communication state cannot be switched in real time, polarization is sensitive, an incident angle is sensitive, and manual intervention is still needed.
Disclosure of Invention
The invention aims to provide an intelligent stealth super-surface for electromagnetic energy perception, which aims to solve the problems that a stealth state and a communication state cannot be switched in real time, polarization is sensitive, an incident angle is sensitive, and manual intervention is still needed.
In order to achieve the purpose, the invention provides the following scheme:
an electromagnetic energy aware intelligent stealth super surface comprising: the system comprises a super surface, an energy perception module and a microcontroller;
the super surface comprises a plurality of super surface units which are periodically arranged; the super-surface unit is provided with an upper-layer metal structure, a middle-layer metal structure and a lower-layer metal structure in a laminated manner from top to bottom;
the upper-layer metal structure comprises a first dielectric substrate, and a square metal patch and 4 rectangular metal patches which are arranged on the first dielectric substrate; the square metal patch is arranged at the center of the first dielectric substrate, 4 rectangular metal patches are respectively arranged at the center of the edge of the first dielectric substrate, a first gap is arranged between the 4 rectangular metal patches, a second gap is arranged between the square metal patch and the rectangular metal patch, and a PIN diode is arranged in the second gap; the lower layer metal structure and the upper layer metal structure have the same structure;
the energy perception module is respectively connected with the super surface and the microcontroller, and the microcontroller is connected with the PIN diode; the energy perception module is used for detecting the electromagnetic characteristics of incident waves incident on the super surface and feeding the electromagnetic characteristics back to the microcontroller; the microcontroller is used for controlling the voltage value of the PIN diode according to the electromagnetic characteristic so as to switch the working state of the super surface; the working state comprises a communication state and a stealth state.
Optionally, the intermediate metal structure specifically includes: the hollow slotted square metal patch and the second medium substrate are arranged on the first medium substrate;
the second medium substrate is embedded into the hollow slotted square metal patch; in the vertical direction, the second dielectric substrate is overlapped with the square metal patch, and the hollow grooved square metal patch is overlapped with the first dielectric substrate.
Optionally, only one PIN diode is arranged in each second gap; the PIN diode is used for connecting the square metal patch and the rectangular metal patch; the positive pole of PIN diode with the rectangle metal patch is connected, the negative pole of PIN diode with square metal patch is connected.
Optionally, the energy sensing module specifically includes: a microstrip antenna and a detection wave chip;
the microstrip antenna is arranged on the first dielectric substrate in the upper-layer metal structure, and the detection wave chip is arranged on the first dielectric substrate in the lower-layer metal structure.
Optionally, the type of the detection wave chip is LTC 5530.
Optionally, the microcontroller specifically includes: a single chip microcomputer and a field programmable gate array;
the single chip microcomputer is connected with the field programmable gate array; the field programmable gate array is connected with the PIN diode; the single chip microcomputer is connected with the energy sensing module.
Optionally, the microcontroller provides 0V voltage to the PIN diode in the upper metal structure and the PIN diode in the lower metal structure, and a resistance value of the PIN diode is 1KM Ω, so that an incident state of an incident wave of the super surface in a vertical direction is a wave-transparent state, and the wave-transparent state is a communication state.
Optionally, the microcontroller provides 0.8V voltage for the PIN diode in the upper metal structure, the resistance value of the PIN diode in the upper metal structure is 20 Ω, and provides 0.6V voltage for the PIN diode in the lower metal structure, the resistance value of the PIN diode in the lower metal structure is 300 Ω, so that the incident state of the incident wave of the super surface in the vertical direction is a wave-absorbing state, and the wave-absorbing state is a stealthy state.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects: the invention provides an intelligent stealth super surface for electromagnetic energy perception, which is characterized in that a super surface formed by periodically arranging a plurality of super surface units is connected with an energy perception module so as to detect the electromagnetic characteristics (specifically incident wave signals) of incident electromagnetic waves on the super surface and feed back the electromagnetic characteristics to a microcontroller; PIN diodes are added into the second gaps of the upper-layer metal structure and the second gaps of the lower-layer metal structure, the microcontroller controls the resistance value of the PIN diodes according to the electromagnetic characteristics, and therefore the wave absorbing state and the wave transmitting state of the intelligent stealth super-surface can be switched in real time, the working state of the intelligent stealth super-surface is dynamically switched, manual intervention is not needed, and the intelligent stealth super-surface switching device is intelligent and simple in structure.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic diagram of an electromagnetic energy-aware intelligent stealth super-surface structure provided by the present invention;
FIG. 2 is a schematic view of an upper metal structure or a lower metal structure provided in the present invention;
FIG. 3 is a side view of a super surface unit provided by the present invention;
FIG. 4 is a schematic diagram of an intermediate metal structure provided by the present invention;
fig. 5 is a schematic diagram of S parameters of X polarized waves of the electromagnetic energy sensing intelligent stealth super-surface structure provided by the present invention in a communication state;
fig. 6 is a schematic diagram of S parameter of Y polarized wave of the electromagnetic energy sensing intelligent stealth super-surface structure provided by the present invention in a stealth state;
fig. 7 is a schematic diagram of S parameters of X polarized waves of the electromagnetic energy sensing intelligent stealth super-surface structure provided by the present invention in a communication state;
fig. 8 is a schematic diagram of S parameter of Y polarized wave of the electromagnetic energy sensing intelligent stealth super-surface structure provided by the present invention in a stealth state;
fig. 9 is a schematic diagram of S parameters of an electromagnetic energy sensing intelligent stealth super-surface structure provided by the present invention when in a communication state, X polarized waves are incident at different elevation angles;
fig. 10 is a schematic diagram of S parameters of X polarized waves incident at different elevation angles in a stealth state of the electromagnetic energy sensing intelligent stealth super-surface structure provided by the present invention;
fig. 11 is a peripheral circuit diagram of an energy sensing module LTC5530 chip provided by the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide an intelligent stealth super-surface capable of sensing electromagnetic energy, which can switch a stealth state and a communication state in real time.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Fig. 1 is a schematic diagram of an electromagnetic energy-aware intelligent stealth super-surface structure provided by the present invention, where the electromagnetic energy-aware intelligent stealth super-surface shown in fig. 1 is formed by arranging 8 × 8 super-surface units 1, and an electromagnetic energy-aware intelligent stealth super-surface includes: the system comprises a super surface, an energy perception module and a microcontroller; the super surface comprises a plurality of super surface units 1 which are periodically arranged; the super-surface unit 1 is provided with an upper-layer metal structure 1-1, a middle-layer metal structure 1-2 and a lower-layer metal structure in a laminated manner from top to bottom. The gap between the upper layer metal structure 1-1, the middle layer metal structure 1-2 and the lower layer metal structure is filled with a medium substrate.
As shown in fig. 2-3, the upper metal structure 1-1 includes a first dielectric substrate 1-1-1, and a square metal patch 1-1-2 and 4 rectangular metal patches 1-1-3 disposed on the first dielectric substrate 1-1-1; the square metal patches 1-1-2 are arranged at the center of the first dielectric substrate 1-1-1, the 4 rectangular metal patches 1-1-3 are respectively arranged at the center of the edge of the first dielectric substrate 1-1-1, a first gap is arranged between the 4 rectangular metal patches 1-1-3, a second gap is arranged between the square metal patches 1-1-2 and the rectangular metal patches 1-1-3, and PIN diodes 1-1-4 are arranged in the second gap; the lower layer metal structure is the same as the upper layer metal structure 1-1 in structure; the super-surface can realize polarization insensitivity and incidence angle insensitivity due to the structural design.
The energy perception module is respectively connected with the super surface and the microcontroller, and the microcontroller is connected with the PIN diodes 1-1-4; the energy perception module is used for detecting the electromagnetic characteristics of incident waves incident on the super surface, wherein the electromagnetic characteristics comprise incident wave signals, incident wave polarization modes, incident wave frequencies and incident wave energy densities, and feeding the electromagnetic characteristics back to the microcontroller; the microcontroller is used for controlling the voltage value of the PIN diode 1-1-4 according to the electromagnetic characteristic so as to switch the working state of the super surface; the working state comprises a communication state and a stealth state.
In practical application, fig. 4 is a schematic view of an intermediate metal structure, and as shown in fig. 4, the intermediate metal structure specifically includes: the hollow slotted square metal patch comprises a hollow slotted square metal patch 1-2-1 and a second medium substrate 1-2-2; the second medium substrate 1-2-2 is embedded into the hollow slotted square metal patch 1-2-1; in the vertical direction, the second dielectric substrate 1-2-2 coincides with the square metal patch 1-1-2, and the hollow grooved square metal patch 1-2-1 coincides with the first dielectric substrate 1-1-1.
In practical application, only one PIN diode 1-1-4 is arranged in each second gap; the PIN diode 1-1-4 is used for connecting the square metal patch 1-1-2 and the rectangular metal patch 1-1-3; the positive pole of the PIN diode 1-1-4 is connected with the rectangular metal patch 1-1-3, and the negative pole of the PIN diode 1-1-4 is connected with the square metal patch 1-1-2.
In practical application, the energy sensing module specifically includes: a microstrip antenna and a detection wave chip; the microstrip antenna is arranged on the first dielectric substrate 1-1-1 in the upper-layer metal structure 1-1, and the detection wave chip is arranged on the first dielectric substrate 1-1-1 in the lower-layer metal structure; the type of the detection wave chip is LTC 5530. In addition, the energy sensing module further includes a peripheral circuit, specifically as shown in fig. 11, radio frequency energy is input by a pin1 of the LTC5530 chip, a pin5 outputs a direct current signal, and parameters of each device of the peripheral circuit: r1=68KΩ,R2=22KΩ,R3=82KΩ,R4=10KΩ,C1=0.1μF,C2=100pF,C2=39pF,VCC=6.3V,VENA=7.1V。
In practical application, the microcontroller specifically includes: a single chip microcomputer and a field programmable gate array; the single chip microcomputer is connected with the field programmable gate array; the field programmable gate array is connected with the PIN diodes 1-1-4; the single chip microcomputer is connected with the energy sensing module.
In practical application, fig. 5 to 8 show simulation results of S parameters of x-polarized waves and y-polarized waves in a communication state and a stealth state of the present invention, and functions of realizing communication are shown in fig. 5 and 7, where the microcontroller provides 0V voltage to the PIN diodes 1-1-4 in the upper metal structure 1-1 and the PIN diodes 1-1-4 in the lower metal structure, and a resistance value of the PIN diodes 1-1-4 is 1KM Ω, so that an incident state of an incident wave on the super surface in a vertical direction is a wave-transparent state, and the wave-transparent state is a communication state. That is, the present invention realizes a function of transmitting a wave to an incident wave in the + Z direction, that is, communication, and as can be seen from a comparison between fig. 5 and fig. 7, the present invention realizes a polarization insensitive characteristic.
As shown in fig. 6 and 8, the microcontroller provides 0.8V voltage to the PIN diodes 1-1-4 in the upper metal structure 1-1, the resistance value of the PIN diodes 1-1-4 in the upper metal structure 1-1 is 20 Ω, 0.6V voltage is provided to the PIN diodes 1-1-4 in the lower metal structure, and the resistance value of the PIN diodes 1-1-4 in the lower metal structure is 300 Ω, so that the incident state of the incident wave of the super surface in the vertical direction is a wave-absorbing state, and the wave-absorbing state is a stealth state. Namely, the wave-absorbing function in the + Z direction, namely the stealth function is realized, and the polarization insensitivity characteristic is realized by comparing fig. 6 and fig. 8.
9-10 simulation results show the S parameters of the communication and stealth states of the present invention at different angles of incidence, and fig. 9 shows the S simulation parameters in the communication state at angles of elevation of 10 °, 20 °, and 30 °; fig. 10 shows the S simulation parameters in the stealth state for the elevation angles of 10 °, 20 ° and 30 °, and all show the characteristic of angle insensitivity.
According to the invention, the voltage value of the PIN diode 1-1-4 is controlled by the incident wave signal fed back to the microcontroller by the energy sensing module to change the resistance value of the PIN diode 1-1-4, so that the wave absorbing state and the wave transmitting state of the super surface can be switched in real time; the dynamic switching of the working state of the super surface is realized, manual intervention is not needed, and the intelligent super surface switch device is intelligent and simple in structure.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (8)
1. An intelligent stealth super-surface for electromagnetic energy perception, comprising: the system comprises a super surface, an energy perception module and a microcontroller;
the super surface comprises a plurality of super surface units which are periodically arranged; the super-surface unit is provided with an upper-layer metal structure, a middle-layer metal structure and a lower-layer metal structure in a laminated manner from top to bottom;
the upper-layer metal structure comprises a first dielectric substrate, and a square metal patch and 4 rectangular metal patches which are arranged on the first dielectric substrate; the square metal patch is arranged at the center of the first dielectric substrate, 4 rectangular metal patches are respectively arranged at the center of the edge of the first dielectric substrate, a first gap is arranged between the 4 rectangular metal patches, a second gap is arranged between the square metal patch and the rectangular metal patch, and a PIN diode is arranged in the second gap; the lower layer metal structure and the upper layer metal structure have the same structure;
the energy perception module is respectively connected with the super surface and the microcontroller, and the microcontroller is connected with the PIN diode; the energy perception module is used for detecting the electromagnetic characteristics of incident waves incident on the super surface and feeding the electromagnetic characteristics back to the microcontroller; the microcontroller is used for controlling the voltage value of the PIN diode according to the electromagnetic characteristic so as to switch the working state of the super surface; the working state comprises a communication state and a stealth state.
2. The electromagnetic energy aware smart stealth metasurface of claim 1, wherein the intermediate metal structure specifically comprises: the hollow slotted square metal patch and the second medium substrate are arranged on the first medium substrate;
the second medium substrate is embedded into the hollow slotted square metal patch; in the vertical direction, the second dielectric substrate is overlapped with the square metal patch, and the hollow grooved square metal patch is overlapped with the first dielectric substrate.
3. The electromagnetic energy aware smart stealth super surface of claim 1, wherein only one said PIN diode is disposed within each said second gap; the PIN diode is used for connecting the square metal patch and the rectangular metal patch; the positive pole of PIN diode with the rectangle metal patch is connected, the negative pole of PIN diode with square metal patch is connected.
4. The electromagnetic energy aware intelligent stealth super surface of claim 2, wherein the energy aware module specifically comprises: a microstrip antenna and a detection wave chip;
the microstrip antenna is arranged on the first dielectric substrate in the upper-layer metal structure, and the detection wave chip is arranged on the first dielectric substrate in the lower-layer metal structure.
5. The electromagnetic energy aware intelligent stealth super surface of claim 4, wherein the detection wave chip is of type LTC 5530.
6. The electromagnetic energy aware intelligent stealth super surface as claimed in any one of claims 1-5, wherein said microcontroller specifically comprises: a single chip microcomputer and a field programmable gate array;
the single chip microcomputer is connected with the field programmable gate array; the field programmable gate array is connected with the PIN diode; the single chip microcomputer is connected with the energy sensing module.
7. The electromagnetic energy aware smart stealth super surface of claim 6, wherein the microcontroller provides 0V voltage to a PIN diode in the upper metal structure and a PIN diode in the lower metal structure, the PIN diodes having a resistance of 1KM Ω, such that an incident state of an incident wave of the super surface in a vertical direction is a wave-transparent state, and the wave-transparent state is a communication state.
8. The electromagnetic energy aware intelligent stealth super surface according to claim 6, wherein the microcontroller provides 0.8V voltage to the PIN diode in the upper metal structure, the resistance value of the PIN diode in the upper metal structure is 20 Ω, 0.6V voltage is provided to the PIN diode in the lower metal structure, and the resistance value of the PIN diode in the lower metal structure is 300 Ω, so that the incident state of the incident wave of the super surface in the vertical direction is a wave-absorbing state, and the wave-absorbing state is a stealth state.
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