CN112992644A - Neutralizer system applied to ion beam nonmetal etching - Google Patents
Neutralizer system applied to ion beam nonmetal etching Download PDFInfo
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- CN112992644A CN112992644A CN202110026600.5A CN202110026600A CN112992644A CN 112992644 A CN112992644 A CN 112992644A CN 202110026600 A CN202110026600 A CN 202110026600A CN 112992644 A CN112992644 A CN 112992644A
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- neutralizer
- ion source
- tantalum wire
- ion beam
- grid plate
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- 238000005530 etching Methods 0.000 title claims abstract description 35
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 32
- 229910052755 nonmetal Inorganic materials 0.000 title claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims abstract description 55
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052786 argon Inorganic materials 0.000 claims abstract description 29
- -1 argon ions Chemical class 0.000 claims abstract description 22
- 230000000694 effects Effects 0.000 claims abstract description 18
- 238000006386 neutralization reaction Methods 0.000 claims abstract description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 50
- 230000001133 acceleration Effects 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000005336 cracking Methods 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000007935 neutral effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
Abstract
The invention relates to a neutralizer system applied to ion beam nonmetal etching, which comprises an ion source, a neutralizer and a workbench, wherein the ion source is arranged on the ion source; the positive argon ions which move linearly at a constant speed are generated in front of the ion source, the neutralizer is used for generating electrons with negative charges, and after the electrons with negative charges and the positive argon ions generated by the ion source generate a neutralization effect, the uncharged argon ions which move linearly at a constant speed bombard a workpiece to be etched on the workpiece table; the workbench is used for fixing a workpiece to be etched. The invention can make the resonant gyroscope more perfect in various performance indexes such as precision, slope drift, resolution ratio and the like by reducing frequency cracking.
Description
Technical Field
The invention belongs to the technical field of ion beam etching, and particularly relates to a neutralizer system applied to ion beam nonmetal etching.
Background
Ion beam etching is essentially a processing mode realized by impacting a surface of a part with high-energy ion flow and separating impacted atoms from a body of the part. The ion current of the ion etcher is generated in the ion source component. The ion source mainly comprises a cathode filament, an anode cylinder, a screen grid plate and an accelerating grid plate. After the cathode filament is electrified, electrons are released to impact Ar atoms, so that the Ar atoms are changed into excited Ar + from a stable state, disordered Ar + is accumulated to a certain amount in the ion source, and is led out by a screen grid plate, and then is filtered by an accelerating grid plate to form high-energy ion flow which is emitted to the workpiece table target.
As shown in fig. 1 and 2, the conventional ion beam etching method directly fixes a substrate on a workpiece stage of a vacuum chamber, and starts an ion source to perform ion beam etching on the substrate.
When the original ion beam etching machine is used for etching metal materials such as GT35 and the like, the working principle is that excited Ar + has positive charges, when the excited Ar + bombards the surface of a GT35 base material, the positively charged Ar + is led out along with the grounding of a workpiece target, and the GT35 base material is continuously bombarded by the subsequent Ar + continuously, so that the physical sputtering is realized, and the etching is successful. The harmonic oscillator of the existing quartz material also needs to be bombarded and sputtered by excited Ar < + > to realize the effect of ion beam etching, but when the Ar < + > with positive charge is bombarded to the quartz surface, the Ar < + > cannot be led out due to the insulating property of the quartz material to form accumulation, and due to the principle that like charges repel each other, the accumulated Ar < + > can repel subsequent Ar < + > which is continuously accelerated by the accelerating grid plate, so that the subsequent Ar < + > cannot act on the quartz surface to form the sputtering effect, and the ion beam etching work cannot be finished.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a neutralizer system applied to ion beam nonmetal etching, and can enable a resonant gyroscope to be more perfect in various performance indexes such as precision, slant drift, resolution ratio and the like by reducing frequency cracking.
The invention solves the practical problem by adopting the following technical scheme:
a neutralizer system applied to ion beam nonmetal etching comprises an ion source, a neutralizer and a workbench; the positive argon ions which move linearly at a constant speed are generated in front of the ion source, the neutralizer is used for generating electrons with negative charges, and after the electrons with negative charges and the positive argon ions generated by the ion source generate a neutralization effect, the uncharged argon ions which move linearly at a constant speed bombard a workpiece to be etched on the workpiece table; the workbench is used for fixing a workpiece to be etched.
Further, the neutralizer comprises: the device comprises an ionization tantalum wire, a ceramic insulating sleeve and a regulating transformer; the regulating transformer is connected with the ionization tantalum wire, and voltage is applied to two ends of the ionization tantalum wire to enable the surface of the ionization tantalum wire to generate an ionization effect and ionize a large number of electrons; and the two ends of the ionization tantalum wire are fixedly provided with ceramic insulating sleeves and are fixedly connected with an external cold sleeve through the ceramic insulating sleeves, and the cold sleeve is used for cooling the ion source.
And the ionized tantalum wire is a tantalum wire with the diameter of 0.4 mm, and is wound into a spiral shape with the diameter of 10 mm.
Furthermore, the ion source includes: the cathode filament, the anode cylinder, the screen grid plate and the acceleration grid plate; the cathode filament is arranged on the base, an anode cylinder is sleeved on the periphery of the cathode filament, and a screen grid plate and an acceleration grid plate are sequentially arranged in parallel in front of the anode cylinder; electrons generated after the cathode filament is electrified are ionized with argon introduced into the anode cylinder, and the generated argon ions with positive electricity rotate in the anode cylinder in a disorder way; the positively charged argon ions sequentially pass through the screen grid plate and the acceleration grid plate to form a positively charged argon ion beam which moves linearly at a constant speed.
The invention has the advantages and beneficial effects that:
1. the invention provides a neutralizer device and a system for ion beam etching of non-metallic materials such as quartz and the like, which realize the etching function of non-metallic materials such as quartz and the like on the basis that the original ion beam etching equipment can only etch metal materials such as GT35 and the like, and solve the bottleneck of quality leveling precision requirement of harmonic oscillators. Through quartz hemisphere etching of many heats after installing neutralizer device additional, based on the trimming experiment that frequency trimming system carried out, frequency schizolysis has been repaired from 10Hz to 0.05Hz at present, and the further reduction of frequency schizolysis makes the resonance top all tend towards more perfect in each performance index such as precision, drift to one side, resolution ratio.
2. The invention researches the relationship between the quartz material characteristics and the ion beam sputtering energy and the process parameters such as voltage and current input by further adjusting various parameter indexes of the neutralizer device, analyzes the measurement data, further searches and adjusts the process parameters suitable for quartz material etching, meets the requirement of a leveling test system of the quartz hemispherical harmonic oscillator, and achieves the aims of further trimming frequency cracking and improving the technical indexes of the resonant gyroscope. The technical problem that the performance of the gyroscope is seriously influenced due to frequency cracking of the harmonic oscillator caused by various errors and uneven density stress generated in the processing and manufacturing process of the harmonic oscillator is solved.
Drawings
FIG. 1 is a schematic view of an ion beam etching method of a conventional etching apparatus;
FIG. 2 is a schematic diagram of an ion beam etching method of a conventional etching apparatus;
FIG. 3 is a schematic view of the neutralizer device of the present invention;
FIG. 4 is a schematic diagram of an ion beam etching method after a neutralizer device is added to the etching apparatus of the present invention.
Detailed Description
The embodiments of the invention will be described in further detail below with reference to the accompanying drawings:
a neutralizer system applied to ion beam non-metal etching is disclosed, as shown in FIG. 3 and FIG. 4, comprising an ion source, a neutralizer and a workbench; the positive argon ions which move linearly at a constant speed are generated in front of the ion source, the neutralizer is used for generating electrons with negative charges, and after the electrons with negative charges and the positive argon ions generated by the ion source generate a neutralization effect, the uncharged argon ions which move linearly at a constant speed bombard a workpiece to be etched on the workpiece table; the workbench is used for fixing a workpiece to be etched.
In this embodiment, the neutralizer includes: the device comprises an ionization tantalum wire, a ceramic insulating sleeve and a regulating transformer; the regulating transformer is connected with the ionization tantalum wire, and voltage is applied to two ends of the ionization tantalum wire to enable the surface of the ionization tantalum wire to generate an ionization effect and ionize a large number of electrons; and the two ends of the ionization tantalum wire are fixedly provided with ceramic insulating sleeves and are fixedly connected with an external cold sleeve through the ceramic insulating sleeves, and the cold sleeve is used for cooling the ion source.
In this embodiment, the ionized tantalum wire is a phi 0.4 tantalum wire and is wound into a spiral shape with a diameter of 10 mm.
In this embodiment, the ion source includes: the cathode filament, the anode cylinder, the screen grid plate and the acceleration grid plate; the cathode filament is arranged on the base, an anode cylinder is sleeved on the periphery of the cathode filament, and a screen grid plate and an acceleration grid plate are sequentially arranged in parallel in front of the anode cylinder; electrons generated after the cathode filament is electrified are ionized with argon introduced into the anode cylinder, and the generated argon ions with positive electricity rotate in the anode cylinder in a disorder way; the positively charged argon ions sequentially pass through the screen grid plate and the acceleration grid plate to form a positively charged argon ion beam which moves linearly at a constant speed.
In the embodiment, the neutralizer device mainly comprises a tantalum wire led out from an ion source cold sleeve through an insulator and a regulating transformer. A certain voltage is applied to two ends of the tantalum wire, so that the surface of the tantalum wire is ionized to generate a large number of electrons, and the polarity of the electrons is opposite to that of Ar ions generated by an ion source, so that a neutralization effect is just formed.
The specific method comprises the following steps: selecting a tantalum wire with the diameter of 0.4 mm, winding the tantalum wire into a spiral shape with the diameter of 10mm, additionally arranging the spiral shape in front of an ion source, connecting the spiral shape with a cold sleeve, additionally arranging boron nitride components at the joint of two ends of the tantalum wire and the cold sleeve to serve as insulating components and connecting a middle cathode lead, additionally arranging screws and nuts on two sides of the cold sleeve for fastening, carrying out torque test on fastening screws for locking the tantalum wires on two sides, ensuring the consistent screwing force of the screws on the two sides, and avoiding the problems of deformation, shape position change and the like of parts such as the cold sleeve, the tantalum wire and the. And testing the insulation effect by using a 250V megohmmeter to ensure that the insulation resistance is more than or equal to 250M omega. The electrical parameters are monitored by a medium cathode ammeter, and the number of electrons generated by the tantalum wire is monitored by a Faraday cylinder. The input value of the current and the voltage of the screen grid of the ion source is regulated and controlled, and the uniformity of ion beam current generated by the ion source is ensured. The current value is monitored by a screen grid ammeter, so that the screen grid current is stabilized at 90mA, and the stability of ion source beam current is ensured.
In this embodiment, the cathode filament generates electrons under the condition that voltage is applied to two ends, the electrons randomly rotate through the anode cylinder and then are mixed and collided with argon gas input in the anode cylinder to form argon ions with positive charges, the argon ions are filtered and accelerated through the screen grid plate and the acceleration grid plate to form ion beam current with positive charges with uniform speed and consistent direction, the ion beam current is oppositely attracted with electrons with negative charges generated by the neutralizer to neutralize the positive charges of the argon ions, and a neutralization effect is formed. Argon ions which do uniform linear motion are not electrified, bombard the base material on the workpiece table, and finally form physical sputtering, so that the purpose of etching is achieved.
Fig. 3 is a neutralizer device designed according to the present invention. Through research and analysis on the working mechanism of the ion source, the neutralizer device is designed, even if Ar + with positive charges passes through the acceleration grid plate and then forms a neutralization effect with negative charges generated by the neutralizer, the Ar + with the original positive charges is neutralized and uncharged to become neutral Ar ions, then the neutral Ar ions bombard the quartz substrate, and the neutral Ar ions continuously bombard the substrate to form physical sputtering, so that the purpose of ion beam etching is achieved.
The ion source control circuitry is first modified. Because the original circuit board is seriously aged, the original circuit board needs to be debugged again, and the smoothness of each circuit is ensured. Through debugging, the aging and deformation of parts of components such as resistance, capacitance and the like of the circuit board are found, the reliability cannot be ensured, and the potential safety hazard is extremely high, so that the parts of the components are replaced again; the tantalum wire is additionally arranged on the connecting ring of the ion source, and the tantalum wire is positioned at the accelerated bombardment part of the ion source, and the continuous operation time is as long as 8 hours, so that a high-temperature resistant coil needs to be additionally arranged, and the short circuit caused by deformation after being heated is prevented. Because the whole ion source component and the peripheral shielding cover need to be kept in an insulating state, a ceramic component needs to be additionally arranged at the joint of the ion source component and the peripheral shielding cover for isolation, and a layer of metal tantalum wire impurities are attached to the outer wall of the original ceramic component due to the action of the long-time tantalum wire ionization process, and need to be polished, so that the insulating property of the original ceramic component is ensured.
The neutralizer device mainly comprises a tantalum wire led out from an insulator on an ion source cold sleeve and an adjusting transformer, wherein a certain voltage is applied to two ends of the tantalum wire, so that the surface of the tantalum wire is ionized to generate a large amount of electrons, and the polarity of the tantalum wire is opposite to that of Ar ions generated by the ion source and just forms a neutralization effect with the Ar ions. The tantalum wire is required to be insulated from the cold sleeve, so that negative charges generated by the tantalum wire cannot be led out by the cold sleeve, an insulating sleeve is required to be installed at a fixed part of the tantalum wire, and the insulating performance of the tantalum wire is required to be detected by a megohmmeter during working. After the insulation effect is ensured, a transformer is additionally arranged between the neutralizer and the control circuit board and used for adjusting the current of the neutralizer. The main part of the transformer is an auto-coupling type voltage regulating transformer, and the voltage regulating transformer is arranged in a narrow space of the existing electric control system to meet the working requirement in consideration of the characteristics of undistorted waveform, small volume, high efficiency, long-term stable operation and the like.
The turn ratio of the self-coupling type voltage regulating transformer is continuously adjustable, when a voltage regulator electric brush slides along the polished surface of the coil under the action of a hand wheel, a main shaft and a brush holder, the turn ratio can be continuously changed, so that the output voltage is smoothly adjusted from zero to the maximum value, as the electric brush of a contact group of the voltage regulator electric brush is tightly matched with the polished surface of the coil under the action of spring pressure, the hand wheel is rotated to drive the electric brush to slide on the polished surface of the coil for voltage regulation, the coupling voltage is maintained in a (75-80) V range, and the accurate control of electrical parameters of a neutralizer is realized.
The working principle of the invention is as follows:
the invention designs an ion beam etching nonmetal neutralizer device, even if positive charge Ar + passes through an acceleration grid plate and then forms a neutralization effect with negative charge generated by a neutralizer, the positive charge Ar + is neutralized and uncharged to become neutral Ar ions, then the neutral Ar ions bombard a quartz substrate, and the subsequent continuous neutral Ar ions bombard the substrate continuously to form physical sputtering, so that the purpose of ion beam etching is achieved.
The neutralizer system mainly comprises a tantalum wire led out from an insulator on an ion source cold sleeve and an adjusting transformer, wherein a certain voltage is applied to two ends of the tantalum wire, so that the surface of the tantalum wire is ionized to generate a large amount of electrons, and the polarity of the tantalum wire is opposite to that of Ar ions generated by the ion source and just forms a neutralization effect with the Ar ions. The tantalum wire is required to be insulated from the cold sleeve, so that negative charges generated by the tantalum wire cannot be led out by the cold sleeve, an insulating sleeve is required to be installed at a fixed part of the tantalum wire, and the insulating performance of the tantalum wire is required to be detected by a megohmmeter during working. After the insulation effect is ensured, a transformer is additionally arranged between the neutralizer and the control circuit board and used for adjusting the current of the neutralizer.
It should be emphasized that the examples described herein are illustrative and not restrictive, and thus the present invention includes, but is not limited to, those examples described in this detailed description, as well as other embodiments that can be derived from the teachings of the present invention by those skilled in the art and that are within the scope of the present invention.
Claims (4)
1. A neutralizer system applied to ion beam nonmetal etching is characterized in that: comprises an ion source, a neutralizer and a workbench; the positive argon ions which move linearly at a constant speed are generated in front of the ion source, the neutralizer is used for generating electrons with negative charges, and after the electrons with negative charges and the positive argon ions generated by the ion source generate a neutralization effect, the uncharged argon ions which move linearly at a constant speed bombard a workpiece to be etched on the workpiece table; the workbench is used for fixing a workpiece to be etched.
2. The neutralizer system applied to the ion beam non-metal etching as set forth in claim 1, wherein: the neutralizer comprises: the device comprises an ionization tantalum wire, a ceramic insulating sleeve and a regulating transformer; the regulating transformer is connected with the ionization tantalum wire, and voltage is applied to two ends of the ionization tantalum wire to enable the surface of the ionization tantalum wire to generate an ionization effect and ionize a large number of electrons; and the two ends of the ionization tantalum wire are fixedly provided with ceramic insulating sleeves and are fixedly connected with an external cold sleeve through the ceramic insulating sleeves, and the cold sleeve is used for cooling the ion source.
3. The neutralizer system applied to the ion beam non-metal etching as set forth in claim 1, wherein: the ionized tantalum wire is a tantalum wire with the diameter of 0.4 mm, and is wound into a spiral shape with the diameter of 10 mm.
4. The neutralizer system applied to the ion beam non-metal etching as set forth in claim 1, wherein: the ion source includes: the cathode filament, the anode cylinder, the screen grid plate and the acceleration grid plate; the cathode filament is arranged on the base, an anode cylinder is sleeved on the periphery of the cathode filament, and a screen grid plate and an acceleration grid plate are sequentially arranged in parallel in front of the anode cylinder; electrons generated after the cathode filament is electrified are ionized with argon introduced into the anode cylinder, and the generated argon ions with positive electricity rotate in the anode cylinder in a disorder way; the positively charged argon ions sequentially pass through the screen grid plate and the acceleration grid plate to form a positively charged argon ion beam which moves linearly at a constant speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110026600.5A CN112992644A (en) | 2021-01-08 | 2021-01-08 | Neutralizer system applied to ion beam nonmetal etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110026600.5A CN112992644A (en) | 2021-01-08 | 2021-01-08 | Neutralizer system applied to ion beam nonmetal etching |
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| CN112992644A true CN112992644A (en) | 2021-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110026600.5A Pending CN112992644A (en) | 2021-01-08 | 2021-01-08 | Neutralizer system applied to ion beam nonmetal etching |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10226881A (en) * | 1997-02-18 | 1998-08-25 | Hitachi Ltd | Ion beam working machine |
| CN1917131A (en) * | 2005-08-18 | 2007-02-21 | 中国科学院半导体研究所 | Filament of neutralization cathode in Kaufman ion source, and method |
| CN1983504A (en) * | 2005-12-14 | 2007-06-20 | 鸿富锦精密工业（深圳）有限公司 | Ion source and mould polisher therewith |
| CN105150048A (en) * | 2015-06-19 | 2015-12-16 | 中国人民解放军国防科学技术大学 | Plasma bridge neutralization integrated direct-current ion beam optical polishing device |
| CN106181594A (en) * | 2016-08-31 | 2016-12-07 | 北京埃德万斯离子束技术研究所股份有限公司 | A kind of Subnano-class ion beam polishing equipment and finishing method |
-
2021
- 2021-01-08 CN CN202110026600.5A patent/CN112992644A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10226881A (en) * | 1997-02-18 | 1998-08-25 | Hitachi Ltd | Ion beam working machine |
| CN1917131A (en) * | 2005-08-18 | 2007-02-21 | 中国科学院半导体研究所 | Filament of neutralization cathode in Kaufman ion source, and method |
| CN1983504A (en) * | 2005-12-14 | 2007-06-20 | 鸿富锦精密工业（深圳）有限公司 | Ion source and mould polisher therewith |
| CN105150048A (en) * | 2015-06-19 | 2015-12-16 | 中国人民解放军国防科学技术大学 | Plasma bridge neutralization integrated direct-current ion beam optical polishing device |
| CN106181594A (en) * | 2016-08-31 | 2016-12-07 | 北京埃德万斯离子束技术研究所股份有限公司 | A kind of Subnano-class ion beam polishing equipment and finishing method |
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Application publication date: 20210618 |
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