CN112986779B - Reliability testing device and method for gallium nitride device - Google Patents
Reliability testing device and method for gallium nitride device Download PDFInfo
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Abstract
The invention discloses a reliability testing device and a reliability testing method for a gallium nitride device, wherein the device comprises a load resistor, a load capacitor and a first semiconductor switch device, one end of the load resistor is connected to a direct-current power supply, the other end of the load resistor is connected to a drain electrode of the first semiconductor switch device, a source electrode of the first semiconductor switch device is respectively connected to the drain electrode of the gallium nitride device to be tested and one end of the load capacitor, the other end of the load capacitor is connected to the direct-current power supply, and the source electrode of the gallium nitride device to be tested is grounded; the grid electrode of the first semiconductor switch device is connected to the first pulse generator, and the grid electrode of the to-be-tested gallium nitride device is connected to the second pulse generator. The device and the test method not only greatly reduce the test power consumption of the system, but also can independently accelerate the test in a wide range, and meet the requirements of low power consumption, high flexibility, multiple dimensions and large-batch test of the gallium nitride device.
Description
Technical Field
The invention relates to a reliability testing technology, in particular to a reliability testing device and method applied to a gallium nitride device.
Background
The gallium nitride power transistor is superior to other power transistors in the aspects of efficiency, package size and switching speed, and in order to ensure the application reliability of the gallium nitride device, various stress acceleration tests need to be carried out on the gallium nitride device.
The traditional test circuit based on double-pulse test and resistance-inductance load and Boost test circuit have high system power consumption and limited batch test. A test circuit based on a double-pulse test and an inductive load is also limited in test frequency and duty ratio, and multi-dimensional accelerated test is limited.
Disclosure of Invention
The invention aims to solve the problems in the prior art, and provides a testing device based on a half-bridge circuit and a resistance-capacitance load. The technical scheme of the invention is as follows: the invention discloses a gallium nitride deviceThe reliability testing device comprises a load resistor R load A load capacitor C load A first semiconductor switching device Q H ，
The load resistor R load Is connected to a DC power supply V dd Said load resistance R load Is connected to the first semiconductor switching device Q at the other end H The drain electrode of (a) the first electrode,
the first semiconductor switching device Q H Respectively connected to the gallium nitride device Q to be tested T Drain electrode of (1), and load capacitance C load Said load capacitance C load Is connected to a DC power supply V at the other end dd The source electrode of the to-be-tested gallium nitride device is grounded;
the first semiconductor switching device Q H Is connected to a first pulse generator, and the gallium nitride device Q to be tested T Is connected to a second pulse generator.
Further, the first semiconductor switching device Q H The device is used for voltage stress loading and load capacitance discharging of a gallium nitride device to be tested; in the first semiconductor switching device Q H Conduction and to-be-tested gallium nitride device Q T Cut-off process, gallium nitride device Q to be tested T Bearing the voltage stress V of the test dd Load capacitance C load Through a load resistor R load Discharging; load capacitance C load For realizing gallium nitride device Q to be tested T Switching pulse current stress of (1); gallium nitride device Q to be tested after first semiconductor switching device QH is cut off T Turn-on process, gallium nitride device Q to be tested T Variations in drain-source voltage result in a load capacitance C load Two-terminal voltage change to generate a GaN device Q to be tested T Pulsed current during turn-on.
Further, in an embodiment of the present invention, the first semiconductor switching device (Q) H ) Is a gallium nitride HEMT device; the to-be-tested gallium nitride device is a gallium nitride HEMT device.
The load resistor R load The resistance value range of (A) is 10-1000 omega;
further, in the present inventionIn a specific embodiment, the load capacitor C load The value range of the capacity value is 1 pF-1000 pF.
Based on the above device for testing reliability of gallium nitride, the invention also provides a method for testing reliability of a gallium nitride device, comprising the following steps:
measuring the on-resistance of a gallium nitride device to be measured, and recording the on-resistance as Ron;
secondly, a gallium nitride device to be tested is connected into a gallium nitride reliability testing device, wherein the gallium nitride reliability testing device is the gallium nitride reliability testing device;
step three, setting a direct current power supply V dd Duty ratio of the pulse signal output by the first pulse generator and duty ratio of the pulse signal output by the second pulse generator;
fourthly, placing the gallium nitride reliability testing device at a set testing temperature and operating the gallium nitride reliability testing device;
step five, after the gallium nitride device to be tested runs for a period of time through the reliability device, taking out the gallium nitride device to be tested, measuring the on-resistance of the gallium nitride device to be tested, and recording the on-resistance as R' on;
and sixthly, judging the device performance of the to-be-tested gallium nitride device according to the change value of the on-resistance of the to-be-tested gallium nitride device before and after the to-be-tested gallium nitride device runs through the reliability device.
It should be noted that the gallium nitride device to be tested of the present invention is a single gallium nitride device or is formed by connecting a plurality of gallium nitride devices in parallel; first semiconductor switching device (Q) H ) Is a gallium nitride HEMT device; the to-be-tested gallium nitride device is a gallium nitride HEMT device.
In the above method, the pulse signal output by the first pulse generator is complementary to the pulse signal output by the second pulse generator, i.e. the first semiconductor switching device Q H And a gallium nitride device Q to be tested T Are complementary to each other.
In another embodiment of the present invention, the pulse width of the upper tube of the half-bridge circuit is extended to further adjust the pulse current width flowing through the gan device to be tested, so as to implement a multi-switch test mode, and when the pulse signal output by the second pulse generator changes from a low level to a high level, the pulse signal output by the first pulse generator remains at a high level.
In the above method, further, the first semiconductor switching device Q H And a gallium nitride device Q to be tested T The driving signal of (2) sets a certain proper dead zone to avoid the two devices from being conducted simultaneously.
In the method, further, the duty ratio of the pulse signal output by the second pulse generator ranges from 20% to 60%.
In the method, further, the gallium nitride device to be tested is set at the test temperature through the reliability device, and the direct current power supply V adjusts the test temperature dd Testing the gallium nitride device to be tested under any one or more conditions of the frequency of the pulse signal output by the first/second pulse generator, the duty ratio of the pulse signal output by the first/second pulse generator and the test current;
the test current is the gallium nitride device Q to be tested when the gallium nitride device to be tested runs through the reliability device T Pulse current during the turn-on process;
according to the rated current of the gallium nitride device to be tested, the DC power supply V is applied dd Load resistance R load A load capacitor C load A design choice is made.
The traditional pulse test circuit generally adopts an inductor or a resistor as a load, has larger limitation on test dimensions such as test frequency, test duty ratio and the like, and has larger system test power consumption related to test voltage and test current, so that the traditional pulse test circuit cannot carry out large-batch and multi-dimensional accelerated test and cannot meet the reliability test requirement of gallium nitride.
In comparison, the reliability testing device and method for the gallium nitride device adopt a traditional mature, reliable and largely-used half-bridge circuit form to realize voltage stress testing, and capacitance and resistance loads are used for replacing inductance-resistance loads to realize current pulse stress testing, so that the testing power consumption of a system is greatly reduced, the testing frequency and the testing duty ratio are not limited, the testing dimensions such as testing voltage, testing temperature, testing current, testing frequency and testing duty ratio can be tested independently and widely, and the requirements of low power consumption, high flexibility, multiple dimensions and large-batch testing of the gallium nitride device are met.
Drawings
FIG. 1 is a schematic diagram of a reliability testing apparatus for a GaN device according to the present invention;
FIG. 2 is a schematic diagram of the reliability testing apparatus for GaN device according to the invention,
FIG. 3 is a schematic diagram II of the reliability testing apparatus for GaN devices according to the invention;
FIG. 4 is a diagram illustrating driving signals of a reliability testing method for a GaN device according to a second embodiment of the invention,
fig. 5 is a schematic diagram of driving signals of a reliability testing apparatus for a gan device according to a third embodiment of the present invention.
Detailed Description
The invention is further explained below with reference to the figures and the specific embodiments.
Example one
Referring to fig. 1, the reliability testing device for gallium nitride device of the embodiment of the invention comprises a load resistor R load A load capacitor C load A first semiconductor switching device Q H In the embodiment of the present invention, the first semiconductor switching device Q H Is a gallium nitride device; the load resistor R load Is connected to a DC power supply V dd Said load resistance R load Is connected to the first gallium nitride device Q at the other end H The first gallium nitride device Q H Respectively connected to the gallium nitride device Q to be tested T Drain electrode of (1), load capacitance C load Said load capacitance C load Is connected to a direct current power supply V at the other end dd The source electrode of the to-be-tested gallium nitride device is grounded; the first gallium nitride device Q H Is connected to a first pulse generator, and the gallium nitride device Q to be tested T Is connected to a second pulse generator.
In the embodiment of the invention, the gallium nitride device Q to be tested T Is an enhanced HEMT device; the first gallium nitride device Q H Is an enhanced HEMT device; it is to be noted that the gallium nitride device Q to be tested of the present invention T It can also be a depletion mode HEMT device, the first gallium nitride device Q H Is a depletion mode HEMT device.
Note that the first gallium nitride device Q H The device performance of the gallium nitride device meets the requirements after reliability verification.
The pulse signal output by the first pulse generator is complementary with the pulse signal output by the second pulse generator, namely the first gallium nitride device Q H And a gallium nitride device Q to be tested T Are complementary to each other. In the embodiment of the invention, the pulse amplitude of the first pulse generator is the same as that of the second pulse generator, but it should be noted that the first gallium nitride device Q is different H ；
First gallium nitride device Q H The device is used for voltage stress loading and load capacitance discharging of a gallium nitride device to be tested;
referring to FIG. 2, in a first gallium nitride device Q H Conduction to-be-tested gallium nitride device Q T Cut-off process, gallium nitride device Q to be tested T Bearing the voltage stress V of the test dd Load capacitance C load Through a load resistor R load Discharging; load capacitance C load For realizing gallium nitride device Q to be tested T Switching pulse current stress of (1);
referring to FIG. 3, in a first gallium nitride device Q H Cut-off to-be-tested gallium nitride device Q T Opening process of gallium nitride device Q to be tested T The variation of the drain-source voltage results in a load capacitance C load Two-terminal voltage change to generate a GaN device Q to be tested T Pulsed current during turn-on. Gallium nitride device Q to be tested T The opening process is the gallium nitride device Q to be measured T The process of changing from off to on state.
Further, the load resistor R load The resistance value range of (A) is 10-1000 omega; in generalIn the case of the load resistor R load Has a resistance value ranging from tens of ohms to hundreds of ohms, and a load resistance R load For adjusting load capacitance C load Discharge rate of, i.e. gallium nitride device Q to be measured T The drain-source voltage rise rate.
The load capacitor C load The value range of the capacity value is 1 pF-1000 pF. Normally, the load capacitance C load The capacitance value range is several picofarads to hundreds of picofarads, and the capacitance value range is used for adjusting the to-be-measured gallium nitride device Q T The peak value of the on pulse current.
It should be noted that the gallium nitride device to be tested of the present invention is a single gallium nitride device or a plurality of gallium nitride devices connected in parallel.
Flows through the gallium nitride device Q to be tested T Source-drain current of i d ，i d ＝i R +i C 。i R To flow through a load resistor R load Current of (i) C To flow through a load capacitor C load The current of (2). In the first gallium nitride device Q H Cut-off and to-be-tested gallium nitride device Q T Turn-on process, gallium nitride device Q to be tested T The variation of the drain-source voltage results in a load capacitance C load The voltage change at two ends generates pulse current and load resistance R in the QT turn-on process of the gallium nitride device to be detected load And a first gallium nitride device Q H The drain-drain parasitic capacitance series branch circuit can also generate RC pulse current, so that the gallium nitride device Q to be tested T Pulse current of turn-on process is i d ， id＝C load *dVds/dt+iR load 。
Example two
In the embodiment of the invention, the invention also discloses a reliability test method of the gallium nitride device, which comprises the following steps:
measuring the on-resistance of a gallium nitride device to be measured, and marking the on-resistance as Ron;
step two, connecting the gallium nitride device to be tested into a gallium nitride reliability testing device, and step three, setting a direct-current power supply V dd Duty ratio of pulse signal output from the first pulse generator, and the second pulse generatorDuty ratio of the output pulse signal;
fourthly, placing the gallium nitride reliability testing device at a set testing temperature and operating the gallium nitride reliability testing device;
fifthly, after the gallium nitride device to be tested runs for a period of time through the reliability device, taking out the gallium nitride device to be tested, and measuring the on-resistance of the gallium nitride device to be tested, and marking the on-resistance as R' on;
and sixthly, the on-resistance of the to-be-tested gallium nitride device is changed before and after the to-be-tested gallium nitride device runs through the reliability device, and the device performance of the to-be-tested gallium nitride device is judged according to the change value of the on-resistance.
The reliability testing device of gallium nitride is the same as the first embodiment, and the embodiment of the invention is not described herein again; in the method for testing the reliability of the gallium nitride device, the to-be-tested gallium nitride device is a single gallium nitride device. In order to further accelerate the reliability test of the gallium nitride device, the gallium nitride device to be tested can also be formed by connecting a plurality of gallium nitride devices in parallel. In the embodiment of the present invention, it is preferable that the first semiconductor switching device Q H Is a first gallium nitride device, which is a gallium nitride HEMT device.
The gallium nitride device to be tested is operated by the reliability device to the first semiconductor switch device Q H The device is used for voltage stress loading and load capacitance discharging of a gallium nitride device to be tested; in the first semiconductor switching device Q H Conduction and to-be-tested gallium nitride device Q T Cut-off process, gallium nitride device Q to be tested T Undertake voltage stress V of test dd Load capacitance C load Through a load resistor R load Discharging; load capacitance C load For realizing to-be-tested gallium nitride device Q T Switching pulse current stress of (a); gallium nitride device Q to be tested is cut off at first semiconductor switch device QH T Turn-on process, gallium nitride device Q to be tested T The variation of the drain-source voltage results in a load capacitance C load The voltage of the two ends is changed to generate a gallium nitride device Q to be tested T Pulsed current during turn-on.
The reliability testing device of the gallium nitride device in the embodiment of the method of the invention is the same as the first embodiment, and the invention is not repeated herein.
In the reliability testing method of the gallium nitride device of the invention, as shown in fig. 4, the pulse signal output by the first pulse generator is complementary to the pulse signal output by the second pulse generator, that is, the first gallium nitride device Q H And a gallium nitride device Q to be tested T Are complementary.
In an embodiment of the present invention, a duty ratio of the pulse signal output by the first pulse generator is 50%, and a duty ratio of the pulse signal output by the second pulse generator is 50%. It should be noted that the gallium nitride device Q to be tested T The duty cycle range of the actual accelerated test of the driving signal of (1) may be 20% to 60%, or even wider.
The first gallium nitride device Q H And a gallium nitride device Q to be tested T The driving signal of (2) is set to a certain proper dead zone to prevent two devices from being conducted simultaneously.
Further, the gallium nitride device to be tested is set at a test temperature through the operation of the reliability device, and the test temperature and the direct-current power supply V are adjusted according to the test temperature dd Testing the gallium nitride device to be tested under any one or more conditions of the frequency of the pulse signal output by the first/second pulse generator, the duty ratio of the pulse signal output by the first/second pulse generator and the test current;
the test current is the gallium nitride device Q to be tested when the gallium nitride device to be tested runs through the reliability device T Pulse current during the turn-on process;
the test current is applied to the DC power supply Vdd and the load resistor R according to the rated current of the gallium nitride device to be tested load A load capacitor C load A design choice is made.
It should be noted that, the reference range of the test temperature is 25 ℃ -150 ℃ (generally, the test temperature is a high temperature above 100 ℃, and the highest temperature depends on the ultimate test temperature value of the subsequent device);
under normal conditions, the reference range of the test voltage is 0V-650V (higher voltage devices, higher test voltage, the highest test voltage being the rated voltage of the device or even higher);
the reference range of the test current is several amperes to tens of amperes, and is related to the rated current of the to-be-tested gallium nitride device;
the frequency (test frequency) of the pulse signal output by the first/second pulse generator is in a reference range of tens kilohertz to hundreds kilohertz, and the common test frequency is 100kHz to 500 kHz;
the reference range of the test duty ratio is 20% -60% or even wider.
EXAMPLE III
The method for testing reliability of a gallium nitride device in the second embodiment of the present invention is the same as the second embodiment, and is different from the second embodiment in that in the second embodiment of the present invention, by expanding the pulse width of the upper tube (the first semiconductor switching device) of the half-bridge circuit, as shown in fig. 5, the pulse current width flowing through the gallium nitride device to be tested is further adjusted, so as to implement a multi-switch test mode, and when the pulse signal output by the second pulse generator changes from a low level to a high level, the pulse signal output by the first pulse generator still maintains the high level.
First gallium nitride device Q H And a gallium nitride device Q to be tested T The driving signal of (2) is added with a certain overlapping time based on the complementation of the first embodiment, and can be a first gallium nitride device Q H Delayed turn-off or gallium nitride device Q to be tested T And opening in advance.
Further, the gallium nitride device to be tested is set at a test temperature through the operation of the reliability device, and the test temperature and the direct-current power supply V are adjusted according to the test temperature dd Testing the gallium nitride device to be tested under any one or more conditions of the frequency of the pulse signal output by the first/second pulse generator, the duty ratio of the pulse signal output by the first/second pulse generator and the test current;
the test current is the gallium nitride device Q to be tested when the gallium nitride device to be tested runs through the reliability device T Pulse current during the turn-on process;
the test current is used for testing the DC power supply Vdd and the load resistor R according to the rated current of the gallium nitride device to be tested load Load, and method of operating the sameCapacitor C load A design choice is made.
It should be noted that, the reference range of the test temperature is 25 ℃ -150 ℃ (generally, the test temperature is a high temperature above 100 ℃, and the highest temperature depends on the ultimate test temperature value of the subsequent device);
under normal conditions, the reference range of the test voltage is 0V-650V (higher voltage devices, higher test voltage, the highest test voltage being the rated voltage of the device or even higher);
the reference range of the test current is several amperes to tens of amperes, and is related to the rated current of the to-be-tested gallium nitride device;
the frequency (test frequency) of the pulse signal output by the first/second pulse generator is in a reference range of tens kilohertz to hundreds kilohertz, and the common test frequency is 100kHz to 500 kHz;
the reference range of the test duty ratio is 20% -60% or even wider.
In the reliability test process, the current flows through the gallium nitride device Q to be tested T Source-drain current of i d ，i Rload To flow through a load resistor R load Current of (i) C For flowing through a load capacitor C load Current of (i) d ＝i Rload +i C . In the first gallium nitride device Q H Cut-off to-be-tested gallium nitride device Q T Turn-on process, gallium nitride device Q to be tested T The variation of the drain-source voltage results in a load capacitance C load The voltage of the two ends is changed to generate a gallium nitride device Q to be tested T Pulse current during turn-on, load resistance R load And a first gallium nitride device Q H The parasitic capacitance series branch of the drain source electrode can also generate RC pulse current, and the gallium nitride device Q to be tested T Pulse current of turn-on process is i d ，i d ＝C load *dV ds /dt+i Rload 。
First gallium nitride device Q of half bridge circuit of the invention H Gallium nitride device Q to be tested T There is some overlap in drive pulse widths.
In the first gallium nitride device Q H Conduction to-be-tested gallium nitride device Q T Cut-off process, gallium nitride to be testedDevice Q T Bearing the voltage stress V of the test dd Load capacitance C load Through a load resistor R load Discharging;
in the first gallium nitride device Q H Conduction and to-be-tested gallium nitride device Q T Cut-off process, gallium nitride device Q to be tested T Bearing the voltage stress V of the test dd Load capacitance C load Through a load resistor R load Discharging;
in the first gallium nitride device Q H Conduction and to-be-tested gallium nitride device Q T Conduction process of the GaN device Q to be tested T The variation of the drain-source voltage results in a load capacitance C load The voltage of the two ends is changed to generate a gallium nitride device Q to be tested T Pulse current during the switching-on process, while superimposing a load resistance R load At a test voltage V dd Under the action of the load current, the action time of the load current can be adjusted by adjusting the overlapped pulse width, and various switch current tests are realized.
The above embodiments are only used to further illustrate the reliability testing apparatus and method for gan device of the present invention, but the present invention is not limited to the embodiments, and any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention fall within the protection scope of the technical solution of the present invention.
Claims (9)
1. A reliability testing device for gallium nitride device is characterized in that,
comprising a load resistor (R) load ) Load capacitance (C) load ) A first semiconductor switching device (Q) H ），
The load resistor (R) load ) Is connected to a direct current power supply (V) dd ) The load resistance (R) load ) Is connected to a first semiconductor switching device (Q) H ) The drain electrode of (a) the first electrode,
the first semiconductor switching device (Q) H ) Are respectively connected to the gallium nitride device (Q) to be tested T ) Drain electrode, load capacitance (C) load ) The one terminal of, the load capacitance（C load ) Is connected to a direct current power supply (V) dd ) The source electrode of the gallium nitride device to be tested is grounded;
the first semiconductor switching device (Q) H ) Is connected to a first pulse generator, and the gallium nitride device Q to be tested T Is connected to a second pulse generator;
first semiconductor switching device (Q) H ) The device is used for voltage stress loading and load capacitance discharging of a gallium nitride device to be tested;
in the first semiconductor switching device (Q H ) Conduction and to-be-tested gallium nitride device (Q) T ) Cut-off process, gallium nitride device (Q) to be tested T ) Undertake Voltage stress of test: (V dd ) Load capacitance (C) load ) Through a load resistor (R) load ) Discharging; load capacitance (C load ) For realizing gallium nitride device Q to be tested T Switching pulse current stress of (a);
in the first semiconductor switching device (Q) H ) Cut-off, gallium nitride device (Q) to be tested T ) Turn-on process, gallium nitride device (Q) to be tested T ) The variation of the drain-source voltage results in a load capacitanceC load ) The voltage at two ends changes to generate the gallium nitride device (Q) to be tested T ) Pulsed current during turn-on.
2. The reliability testing apparatus for GaN device according to claim 1, characterized in that,
the first semiconductor switch device is a gallium nitride HEMT device;
the load resistance (R load ) The resistance value range of (1) is 10-1000 omega;
the load capacitance (C) load ) The value range of the volume value is 1 pF-1000 pF.
3. A reliability test method for a gallium nitride device is characterized by comprising the following steps:
measuring the on-resistance of a gallium nitride device to be measured, and marking the on-resistance as Ron;
secondly, a gallium nitride device to be tested is connected into a reliability testing device of the gallium nitride device, wherein the reliability testing device of the gallium nitride device is the reliability testing device of the gallium nitride device in claim 1;
step three, setting a direct current power supply (V) dd ) The duty ratio of the pulse signal output by the first pulse generator and the duty ratio of the pulse signal output by the second pulse generator;
fourthly, the reliability testing device of the gallium nitride device is placed at a set testing temperature and operates;
step five, after the gallium nitride device to be tested runs for a period of time through the reliability device, taking out the gallium nitride device to be tested, measuring the on-resistance of the gallium nitride device to be tested, and recording the on-resistance as R' on;
and sixthly, judging the device performance of the to-be-tested gallium nitride device according to the change value of the on-resistance of the to-be-tested gallium nitride device before and after the to-be-tested gallium nitride device runs through the reliability device.
4. The method of claim 3, wherein the step of testing the reliability of the gallium nitride device,
the to-be-tested gallium nitride device is a single gallium nitride device or is formed by connecting a plurality of gallium nitride devices in parallel;
first semiconductor switching device (Q) H ) Is a gallium nitride HEMT device; the to-be-tested gallium nitride device is a gallium nitride HEMT device.
5. The method of testing reliability of a gallium nitride device according to claim 3,
the pulse signal output by the first pulse generator is complementary to the pulse signal output by the second pulse generator, i.e. the first semiconductor switching device (Q) H ) And a gallium nitride device (Q) to be tested T ) Are complementary.
6. The method of testing reliability of a gallium nitride device according to claim 3,
when the pulse signal output by the second pulse generator changes from low level to high level, the pulse signal output by the first pulse generator still keeps high level.
7. The method of testing reliability of a gallium nitride device according to claim 5,
the first semiconductor switching device (Q) H ) And a gallium nitride device (Q) to be tested T ) The driving signal of (2) sets a certain proper dead zone to avoid the two devices from being conducted simultaneously.
8. The method of testing reliability of a gallium nitride device according to claim 5,
the duty ratio range of the pulse signal output by the second pulse generator is 20% -60%.
9. The method of testing reliability of a gallium nitride device according to claim 3,
setting the gallium nitride device to be tested at test temperature via the reliability device, and adjusting the test temperature according to the DC power supply (V) dd ) Testing the gallium nitride device to be tested under any one or more conditions of the frequency of the pulse signal output by the first/second pulse generator, the duty ratio of the pulse signal output by the first/second pulse generator and the test current;
the test current is the gallium nitride device (Q) to be tested when the gallium nitride device to be tested runs through the reliability device T ) Pulse current during turn-on;
according to rated current of gallium nitride device to be tested, the direct current power supply (V) is connected dd ) Load resistor (R) load ) Load capacitance (C) load ) A design choice is made.
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