CN112986685B - 单晶硅棒电阻率的测量方法及装置 - Google Patents
单晶硅棒电阻率的测量方法及装置 Download PDFInfo
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- CN112986685B CN112986685B CN202110180928.2A CN202110180928A CN112986685B CN 112986685 B CN112986685 B CN 112986685B CN 202110180928 A CN202110180928 A CN 202110180928A CN 112986685 B CN112986685 B CN 112986685B
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- silicon rod
- single crystal
- resistivity
- doping concentration
- crystal silicon
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 366
- 238000000034 method Methods 0.000 title claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- 238000004364 calculation method Methods 0.000 claims abstract description 30
- 238000009826 distribution Methods 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 28
- 238000005204 segregation Methods 0.000 claims description 19
- 238000004590 computer program Methods 0.000 claims description 3
- 238000000691 measurement method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 35
- 239000013078 crystal Substances 0.000 description 17
- 239000002019 doping agent Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000002231 Czochralski process Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/041—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
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CN202110180928.2A CN112986685B (zh) | 2021-02-09 | 2021-02-09 | 单晶硅棒电阻率的测量方法及装置 |
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CN202110180928.2A CN112986685B (zh) | 2021-02-09 | 2021-02-09 | 单晶硅棒电阻率的测量方法及装置 |
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CN112986685A CN112986685A (zh) | 2021-06-18 |
CN112986685B true CN112986685B (zh) | 2023-11-10 |
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Families Citing this family (2)
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CN114047383A (zh) * | 2021-11-02 | 2022-02-15 | 中环领先半导体材料有限公司 | 一种单晶硅棒电阻率的自动化测试设备及方法 |
CN114325105A (zh) * | 2022-01-05 | 2022-04-12 | 青海高景太阳能科技有限公司 | 一种单晶硅棒电阻率的测量方法及装置 |
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JP2017220545A (ja) * | 2016-06-07 | 2017-12-14 | 信越半導体株式会社 | シリコン単結晶ウェーハの抵抗率評価方法 |
JP2019108248A (ja) * | 2017-12-19 | 2019-07-04 | 株式会社Sumco | シリコン単結晶の製造方法 |
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JP2019202913A (ja) * | 2018-05-23 | 2019-11-28 | 信越半導体株式会社 | 原料結晶の抵抗率の測定方法及びfzシリコン単結晶の製造方法 |
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2021
- 2021-02-09 CN CN202110180928.2A patent/CN112986685B/zh active Active
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JP2008211113A (ja) * | 2007-02-28 | 2008-09-11 | Shin Etsu Handotai Co Ltd | エピタキシャル層のドーパント濃度測定方法およびこれを用いたエピタキシャル層の抵抗率測定方法 |
CN102081063A (zh) * | 2009-12-01 | 2011-06-01 | 王正园 | 掺硼磷cz硅棒及配料中硼、磷快速分析法 |
JP2017220545A (ja) * | 2016-06-07 | 2017-12-14 | 信越半導体株式会社 | シリコン単結晶ウェーハの抵抗率評価方法 |
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CN111364099A (zh) * | 2020-04-21 | 2020-07-03 | 宁夏银和新能源科技有限公司 | 连续拉制单晶棒剩余锅中料电阻率计算方法 |
CN111477560A (zh) * | 2020-05-14 | 2020-07-31 | 包头美科硅能源有限公司 | 太阳能电池用镓、硼掺杂单晶硅棒区分的快速检测方法 |
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Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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