CN112985651A - Gear dynamic meshing force detection film sensor and application method thereof - Google Patents
Gear dynamic meshing force detection film sensor and application method thereof Download PDFInfo
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- CN112985651A CN112985651A CN202110063419.1A CN202110063419A CN112985651A CN 112985651 A CN112985651 A CN 112985651A CN 202110063419 A CN202110063419 A CN 202110063419A CN 112985651 A CN112985651 A CN 112985651A
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000001514 detection method Methods 0.000 title abstract description 24
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 34
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 34
- 239000012528 membrane Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 70
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 29
- 239000010410 layer Substances 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 15
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 230000000873 masking effect Effects 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 6
- 230000036541 health Effects 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract description 2
- 230000009471 action Effects 0.000 abstract 1
- 230000008859 change Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000003745 diagnosis Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 238000010586 diagram Methods 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M13/00—Testing of machine parts
- G01M13/02—Gearings; Transmission mechanisms
- G01M13/021—Gearings
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Abstract
The invention discloses a gear dynamic meshing force detection film sensor and an application method thereof, wherein the gear dynamic meshing force detection film sensor comprises: the insulating layer is arranged on the surface of the gear base body; the electrode is sputtered on the surface of the insulating layer; the electrodes comprise a tooth electrode and a shaft electrode which are electrically connected through a lead; a pressure sensitive element comprising: MoS2A piezoresistive film; wherein, MoS2The piezoresistive film is of an arch structure, MoS2The piezoresistive film is sputtered on the surface of the insulating layer of the tooth meshing tooth surface of the gear; MoS2The piezoresistive membrane is electrically connected with the tooth electrode. The invention relates to a film sensor for detecting dynamic engaging force of a gear, which has the advantages that in the process of engaging the gear, a piezoresistive film is strained under the stress action, the resistance is regularly changed, the output performance is stable, and the film sensor hasThe system has the advantages of integration, ultra-thinness, quick response, ultra-sensitivity and the like, and can monitor the running health state of the gear in real time.
Description
Technical Field
The invention belongs to the technical field of sensors, and relates to a magnetron sputtering MoS2The field, in particular to a gear dynamic meshing force detection film sensorAnd methods of use thereof.
Background
The gear transmission is the most common transmission mode in mechanical equipment, has a stable transmission ratio, and has the advantages of high transmission efficiency, reliable working performance, long service life and the like; meanwhile, gear transmission generates dynamic load during working, the problems of vibration and noise are obvious, overload protection cannot be realized, and hidden danger is brought to equipment operation safety.
In order to ensure the safe and efficient operation of equipment, the on-line monitoring and fault diagnosis during gear meshing can be realized by detecting the dynamic meshing force of the gears. At present, the monitoring and fault diagnosis of the gear meshing force is to collect vibration signals of mechanical equipment in operation by using a vibration sensor, a direct measuring device is not provided, characteristic signals are extracted by different analysis methods, the algorithm is complex and changeable, and the actual and effective gear dynamic meshing force is difficult to obtain in practice.
In summary, a new thin film sensor for detecting dynamic meshing force of gears and its application method are needed.
Disclosure of Invention
The present invention is directed to a thin film sensor for detecting dynamic meshing force of a gear and a method for applying the same, which solves one or more of the above problems. According to the film sensor for detecting the dynamic engaging force of the gear, in the process of engaging the gear, the piezoresistive film is stressed to generate strain, the resistance is regularly changed, the output performance is stable, the film sensor has the advantages of integration, super-thinness, fast response, super-sensitivity and the like, and the health state of the running of the gear can be monitored in real time; in addition, the preparation method has simple process, easy operation control, high deposition rate of the piezoresistive film, compact and uniform film formation and easy mass production.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention discloses a gear dynamic meshing force detection film sensor, which comprises:
the insulating layer is arranged on the surface of the gear base body; wherein the gear base includes a gear shaft and gear teeth;
the electrode is sputtered on the surface of the insulating layer; the electrodes comprise a tooth electrode and a shaft electrode, and the tooth electrode and the shaft electrode are electrically connected through a lead; the gear electrode is used for being arranged on a meshing tooth surface or a gear tooth side surface of a gear, and the shaft electrode is used for being arranged on the surface of a gear shaft;
a pressure sensitive element comprising: MoS2A piezoresistive film; wherein the MoS2The piezoresistive film is of an arch structure, and the MoS2The piezoresistive film is sputtered on the surface of the insulating layer of the tooth meshing tooth surface of the gear; the MoS2The piezoresistive membrane is electrically connected with the tooth electrode.
In a further development of the invention, the MoS is2The piezoresistive film is formed by adopting MoS through a magnetron sputtering method by utilizing hard masking2Sputtering the target material.
In a further development of the invention, the MoS is2The thickness of the piezoresistive film is 1-5 μm.
In a further development of the invention, the electrode and the MoS are2The piezoresistive thin films are formed by sputtering through an MEMS technology.
The invention further improves the method and also comprises the following steps: a protective layer; the protective layer covers the MoS2Piezoresistive membrane, said electrode.
In a further improvement of the invention, the insulating layer and the protective layer are both made of Si02And (4) coating.
The invention further improves the method and also comprises the following steps: and the circuit board is used for collecting and connecting the end electrodes of the teeth.
The invention is further improved in that the circuit board is arranged at the shaft end of the gear shaft, and the circuit board is electrically connected with the shaft electrode through a lead.
The invention discloses an application method of a gear dynamic meshing force detection film sensor, which is used for detecting the gear dynamic meshing force.
The invention discloses an application method of a gear dynamic meshing force detection film sensor, which comprises the following steps:
uniformly sputtering an insulating material on the gear matrix to form an insulating layer;
preparing patterned electrode and MoS on insulating layer by hard masking and magnetron sputtering process2A piezoresistive film; wherein the MoS2The piezoresistive film is contacted with the input end of the tooth electrode, and the output end of the tooth electrode is electrically connected with the shaft electrode through a lead.
Compared with the prior art, the invention has the following beneficial effects:
in the gear dynamic meshing force detection film sensor, the MoS is formed by magnetron sputtering2The resistance value of the film is obviously changed when the film is subjected to stress strain, the film shows regular change along with the change of pressure, and the output performance is excellent; the function of detecting the dynamic force of gear engagement is realized through the pressure change of gear engagement; the gear dynamic meshing force detection film sensor prepared based on the piezoresistive film has the characteristics of being ultra-thin, ultra-sensitive, fast in response and the like, and has the advantages of being easy to integrate with a gear matrix and the like.
According to the invention, the sensitive element has good wear resistance and sealing property under the encapsulation protection of the protective layer, and the abrasion of the sensitive element and the water vapor in the environment entering the sensitive element during gear meshing are avoided, so that the performance of the gear meshing force detection film sensor is ensured, and the service life of the sensor is prolonged.
MoS prepared based on magnetron sputtering process2The gear meshing force detection film sensor can measure dynamic force when the gear tooth surface is meshed with a gear; the imaging and the miniaturization of the sensitive element are realized through the MEMS technology, so that the sensitive element has higher sensitivity; the sensitive element adopts a magnetron sputtering method, and large-area uniform preparation can be realized.
The invention discloses a magnetic control sputtering-based MoS2The preparation method of the gear dynamic meshing force detection film sensor; the prepared gear dynamic meshing force detection film sensor has the characteristics of being ultrathin, fast in response, ultrasensitive and the like. Specifically, the MoS prepared by the magnetron sputtering process2The piezoresistive pressure-resistant film has piezoresistive effect, simple preparation process, easy operation control, compact and uniform film formation, large-area production and wide application prospect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art are briefly introduced below; it is obvious that the drawings in the following description are some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
FIG. 1 shows a MoS based on magnetron sputtering in an embodiment of the present invention2The structure schematic diagram of the gear dynamic meshing force detection film sensor;
FIG. 2 is a schematic top view of a single-tooth-surface engagement force detecting thin-film sensor according to an embodiment of the present invention;
FIG. 3 is a schematic side view of a single-tooth-surface meshing force detecting thin-film sensor according to an embodiment of the present invention;
in the figure, 1, a gear base; 2. an insulating layer; 3. a tooth electrode; 4. a pressure sensitive element; 5. a protective layer; 6. a gear shaft; 7. a shaft electrode; 8. a circuit board; 9. and (4) conducting wires.
Detailed Description
In order to make the purpose, technical effect and technical solution of the embodiments of the present invention clearer, the following clearly and completely describes the technical solution of the embodiments of the present invention with reference to the drawings in the embodiments of the present invention; it is to be understood that the described embodiments are only some of the embodiments of the present invention. Other embodiments, which can be derived by one of ordinary skill in the art from the disclosed embodiments without inventive faculty, are intended to be within the scope of the invention.
Referring to fig. 1 to 3, a MoS based magnetron sputtering method according to an embodiment of the invention2The thin film sensor for detecting dynamic meshing force of a gear specifically comprises:
the gear matrix 1, the surface layer of the gear matrix 1 is uniformly sputtered with an insulating layer 2, a patterned electrode and MoS2A piezoresistive film; the patterned electrode is sputtered on the surface of the insulating layer 2; the MoS2The piezoresistive film is contacted with the electrode; wherein the MoS2The piezoresistive film adopts magnetismThe pressure sensitive element 4 is formed by preparing by a controlled sputtering method.
In the embodiment of the invention, the electrode and the MoS2The piezoresistive thin films are formed by sputtering through an MEMS technology. MoS prepared based on magnetron sputtering technology in embodiment of the invention2The gear meshing force detection film sensor can measure dynamic force when the gear tooth surface is meshed with a gear; the imaging and the miniaturization of the sensitive element are realized through the MEMS technology, so that the sensitive element has higher sensitivity; the sensitive element adopts a magnetron sputtering method, and large-area uniform preparation can be realized.
In the embodiment of the invention, the electrodes comprise a tooth electrode 3 and a shaft electrode 7, and the tooth electrode 3 and the shaft electrode 7 are connected by welding through a lead 9.
In the embodiment of the invention, the gear electrodes 3 are arranged on two sides of the meshing tooth surface and the side part of the gear tooth and are formed by sputtering by a magnetron sputtering method by utilizing hard masking.
In the embodiment of the present invention, the shaft electrodes 7 are uniformly distributed on the shaft surfaces of the two sides of the gear and extend to the two ends of the shaft.
In the embodiment of the invention, a protective layer 5 is also arranged; the protective layer 5 covers the entire MoS2Piezoresistive membranes and electrodes. According to the invention, the sensitive element has good wear resistance and sealing property under the encapsulation protection of the protective layer 5, and the abrasion of the sensitive element and the water vapor in the environment entering the sensitive element during gear meshing are avoided, so that the performance of the gear meshing force detection film sensor is ensured, and the service life of the sensor is prolonged.
In the embodiment of the invention, the method further comprises the following steps: a circuit board 8; the circuit board 8 is arranged at the shaft end; the circuit board 8 and the shaft electrode 7 are connected by welding through a lead 9.
In the embodiment of the invention, the MoS2The piezoresistive film is in a bow-shaped structure, is arranged at the position of the tooth surface of the meshing, and adopts MoS by a magnetron sputtering method by utilizing hard masking2Sputtering the target material. The MoS2The piezoresistive film is 1-5 μm thick.
Magnetron sputtering MoS of the embodiment of the invention2The resistance of the film changes significantly when the film is subjected to stress strain,the pressure change shows regular change, and the output performance is excellent; the function of detecting the dynamic force of gear engagement is realized through the pressure change of gear engagement; the gear dynamic meshing force detection film sensor prepared based on the piezoresistive film has the characteristics of being ultra-thin, ultra-sensitive, fast in response and the like, and has the advantages of being easy to integrate with a gear matrix and the like.
The working principle of the invention comprises: in the process of gear meshing, due to the stress change of a meshing surface, the meshing tooth surface is strained, and MoS deposited on the meshing surface of the gear2The film has good binding force with the tooth surface, MoS2The film is also strained, MoS2The internal structure changes, resulting in regular changes in its resistance. Can be composed of MoS2The change of the film resistance calculates the surface stress condition of the gear, and the measurement of the dynamic meshing force of the gear is realized.
MoS based on magnetron sputtering2The preparation method of the thin film sensor for detecting the dynamic meshing force of the gear comprises the following steps:
uniformly sputtering an insulating material on the gear and the gear shaft to form an insulating layer;
preparing patterned electrode and MoS on insulating layer by hard masking and magnetron sputtering process2A piezoresistive film;
wherein the electrode and the MoS2Piezoresistive film contacts, said MoS2The piezoresistive membrane contacts a pressure sensitive element that constitutes a sensor. Preparing electrode and MoS on gear matrix by hard masking and magnetron sputtering process2A pressure sensitive membrane.
The invention discloses a magnetic control sputtering-based MoS2The preparation method of the gear dynamic meshing force detection film sensor; the prepared gear dynamic meshing force detection film sensor has the characteristics of being ultrathin, fast in response, ultrasensitive and the like. Specifically, the MoS prepared by the magnetron sputtering process2The piezoresistive pressure-resistant film has piezoresistive effect, simple preparation process, easy operation control, compact and uniform film formation, large-area production and wide application prospect.
Detailed description of the preferred embodiment 1
MoS based on magnetron sputtering2The gear dynamic meshing force detection film sensor of (1), comprising: a gear tooth substrate; spraying an insulating layer 2 on the surface of the gear tooth substrate; the gear teeth are characterized in that gear teeth electrodes 3 and sensitive elements are sputtered on the insulating layer 2 through hard masking at the side surfaces and the meshing surface of the gear teeth, a protective layer 5 is sprayed on the surfaces of the sensitive elements and the gear teeth electrodes 3, and the protective layer 5 covers all MoS2The piezoresistive film and the electrode prevent the abrasion when the tooth surfaces are engaged. Wherein, the piezoresistive film prepared by the magnetron sputtering method forms a piezoresistive sensitive element of the sensor.
Specific example 2
MoS based on magnetron sputtering2The thin film sensor for detecting dynamic meshing force of gears, further comprising: the gear shaft 6, the gear shaft 6 surface is evenly coated with the insulating layer 2, the shaft electrode 7 is evenly distributed on the shaft surface of the gear both sides, extends to the both ends of the shaft, and is welded and communicated with the circuit board 8 by the wire 9.
MoS prepared based on magnetron sputtering process2Gear dynamic engagement force detection film sensor, MoS2The film has good piezoresistive effect, and the piezoresistive film prepared by the magnetron sputtering process can realize patterning and miniaturization by utilizing hard masking. The MoS based on magnetron sputtering2The gear dynamic meshing force detection film sensor has the characteristics of being ultrathin, fast in response, ultrasensitive and the like.
Specific example 3
The embodiment of the invention is different from the embodiment 1 only in that the insulating layers are uniformly distributed on the surface of the gear and the surface of the gear shaft, and the SiO with uniform thickness is prepared by adopting a magnetron sputtering process2And the thickness is 500 nm.
Specific example 4
Referring to FIG. 1, the embodiment of the present invention differs from embodiment 1 only in that the MoS of magnetron sputtering2A sensor is disposed on each engaging tooth surface, the sensor having a thickness of 1 μm. The sensing element is of an arch structure and adopts MoS2Sputtering the target material.
Specific example 5
In the embodiment of the invention, the tooth electrode 3 has a self-similar structure, the input end is connected with the sensitive element, the output end is connected with the shaft electrode 7 to the circuit board 8 through the wire 9, and a symmetrical arrangement mode is adopted. The tooth electrode 3 is formed by sputtering a metal target by using hard masking, has good conductivity and has a thickness of 500 nm.
Specific example 6
In the embodiment of the invention, the protective layer 5 is Si02The coating is uniformly prepared by adopting a magnetron sputtering process, and the thickness of the coating is 5 mu m. The protective layer has good wear resistance and sealing performance, and effectively prevents the wear of a sensitive element and the water vapor in the environment from entering the sensitive element when the gear is meshed, so that the performance of the gear meshing force detection film sensor is ensured, and the service life of the sensor is prolonged.
Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art can make modifications and equivalents to the embodiments of the present invention without departing from the spirit and scope of the present invention, which is set forth in the claims of the present application.
Claims (10)
1. A thin film gear dynamic meshing force detecting sensor, comprising:
the insulating layer (2) is arranged on the surface of the gear base body (1); wherein the gear base body (1) comprises a gear shaft (6) and gear teeth;
an electrode sputtered on the surface of the insulating layer (2); the electrode comprises a tooth electrode (3) and a shaft electrode (7), and the tooth electrode (3) and the shaft electrode (7) are electrically connected through a lead (9); the gear electrode (3) is used for being arranged on a meshing tooth surface or a gear tooth side surface of a gear tooth, and the shaft electrode (7) is used for being arranged on the surface of a gear shaft (6);
pressure-sensitive element (4) comprising: MoS2A piezoresistive film; wherein the MoS2The piezoresistive film is of an arch structure, and the MoS2The piezoresistive film is sputtered on the surface of the insulating layer (2) of the tooth meshing tooth surface of the gear; the MoS2The piezoresistive membrane is electrically connected with the tooth electrode (3).
2. The thin film gear dynamic meshing force detecting sensor according to claim 1, wherein the MoS is a magnetic field sensor2The piezoresistive film is formed by adopting MoS through a magnetron sputtering method by utilizing hard masking2Sputtering the target material.
3. The thin film gear dynamic meshing force detecting sensor according to claim 1, wherein the MoS is a magnetic field sensor2The thickness of the piezoresistive film is 1-5 μm.
4. The thin film gear dynamic meshing force detecting sensor according to claim 1, wherein the electrodes and the MoS are disposed in a predetermined pattern2The piezoresistive thin films are formed by sputtering through an MEMS technology.
5. The gear dynamic meshing force detecting film sensor according to claim 1, further comprising: a protective layer (5); the protective layer (5) covers the MoS2Piezoresistive membrane, said electrode.
6. A gear dynamic meshing force detecting film sensor according to claim 5, wherein said insulating layer (2) and said protective layer (5) are both Si02And (4) coating.
7. The gear dynamic meshing force detecting film sensor according to claim 1, further comprising: and the circuit board (8) is used for collecting and connecting the electrodes.
8. A gear dynamic meshing force detecting film sensor according to claim 7, wherein said circuit board (8) is disposed at the shaft end of the gear shaft (6), and said circuit board (8) is electrically connected to said shaft electrode (7) through a lead wire (9).
9. The method for using a thin film sensor for detecting dynamic engaging force of gears according to claim 1, wherein the thin film sensor is used for detecting dynamic engaging force of gears.
10. A method of using the gear dynamic meshing force detecting film sensor according to claim 1, comprising the steps of:
uniformly sputtering an insulating material on the gear matrix to form an insulating layer;
preparing patterned electrode and MoS on insulating layer by hard masking and magnetron sputtering process2A piezoresistive film; wherein the MoS2The piezoresistive film is contacted with the input end of the tooth electrode, and the output end of the tooth electrode is electrically connected with the shaft electrode through a lead.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110063419.1A CN112985651B (en) | 2021-01-18 | 2021-01-18 | Gear dynamic meshing force detection film sensor and application method thereof |
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| CN202110063419.1A CN112985651B (en) | 2021-01-18 | 2021-01-18 | Gear dynamic meshing force detection film sensor and application method thereof |
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| CN110736421A (en) * | 2019-11-21 | 2020-01-31 | 中国船舶重工集团公司第七0四研究所 | Thin film strain gauge for elastomer strain measurement and preparation method thereof |
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