CN112981407A - Ring-removed polycrystalline diamond compact and processing method thereof - Google Patents
Ring-removed polycrystalline diamond compact and processing method thereof Download PDFInfo
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- CN112981407A CN112981407A CN202110146734.0A CN202110146734A CN112981407A CN 112981407 A CN112981407 A CN 112981407A CN 202110146734 A CN202110146734 A CN 202110146734A CN 112981407 A CN112981407 A CN 112981407A
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- 239000010432 diamond Substances 0.000 title claims abstract description 150
- 238000003672 processing method Methods 0.000 title claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 62
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 57
- 150000003624 transition metals Chemical class 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 238000012545 processing Methods 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 57
- 239000002131 composite material Substances 0.000 claims description 39
- 239000002253 acid Substances 0.000 claims description 25
- 238000001556 precipitation Methods 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 11
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
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- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
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- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229940071870 hydroiodic acid Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 1
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- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
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- 239000010948 rhodium Substances 0.000 description 1
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- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a ring-removed polycrystalline diamond compact and a processing method thereof, which are mainly used in the technical field of drilling. According to the invention, the protective layer is arranged at the designated position on the surface of the polycrystalline diamond compact, and then the solvent is utilized to selectively separate out the transition metal in the highest part of the polycrystalline diamond compact affected by the temperature in the drilling process, so that the hardness, stability, impact resistance and wear resistance of the highest part of the polycrystalline diamond compact affected by the temperature are obviously improved, and the polycrystalline diamond has longer service life; the processing method is simple and effective, and is suitable for industrial batch processing and manufacturing of ring-removed polycrystalline diamond compacts.
Description
Technical Field
The invention relates to the technical field of superhard materials, in particular to an annular polycrystalline diamond compact and a processing method thereof.
Background
Polycrystalline diamond composite materials, which are important as cutters in the aspect of being used as key working components for crude oil and natural gas extraction, need to have the most excellent material properties, including hardness, toughness and thermal stability. The thermal stability can be changed by carrying out surface treatment at the later stage of the synthesis of the composite sheet, and in the process of synthesizing the polycrystalline diamond composite material, the synthesis is usually carried out under the conditions of high temperature and high pressure in the prior art, wherein transition metal of the eighth group in the periodic table of elements is usually used as a catalyst to reduce the temperature and pressure required by the phase formation of diamond, so that the technical index level which can be reached by the existing press is realized, and the whole synthesis preparation process is completed.
However, in practical drilling applications, the transition metal element infiltrated into the polycrystalline diamond material causes local stress concentration due to the difference between the thermal expansion coefficient and the diamond body, thereby reducing the thermal stability of the composite material; in addition, the transition metal element significantly reduces the temperature at which the diamond phase is transformed into the graphite phase, typically only 700 ℃, at normal pressure, thereby severely affecting the application temperature of the composite material and causing a reduction in thermal performance.
In the prior art, the common consensus of the overall surface treatment in the industry is that the surface of the whole composite layer is treated indiscriminately, only the depth and the appearance of specific treatment are defined in different degrees, and for the consideration of technology and cost, the surface treatment control is not carried out on other parts of the composite layer when the surface of the whole composite layer is treated indiscriminately, so that the comprehensive performance of the composite sheet is further optimized.
After the transition metal phase in the polycrystalline composite material is separated out and removed, the mechanical property of the composite material is tested, the hardness index at normal temperature can be reduced by nearly 30%, and the fracture toughness is correspondingly reduced by more than 30% by analyzing from the aspect of toughness. It can be seen that surface treatment is not a comprehensive performance enhancing technique, but because of its significant improvement in thermal stability (300% is recognized by the industry), with other reductions being temporarily ignored.
As drilling technology has increased, the mechanical parameters of bit rotational speed, torque and forward shear during drilling have increased, and the thermal stability requirements have likewise increased. The market is pointing to a new balance point, which will tend to more precise surface treatment requirements, minimizing mechanical degradation while maximizing thermal stability.
In the prior art, the polycrystalline diamond compact after the surface of the whole composite layer is treated indiscriminately cannot meet the drilling requirement in the drilling process, so that the part, which is most affected by the temperature, of the polycrystalline diamond compact is seriously damaged in the drilling process, the polycrystalline diamond needs to be frequently replaced, the resource is wasted, the drilling cost is increased, and the construction progress is seriously prolonged.
Disclosure of Invention
In order to solve the problems, the invention provides a processing method of an annular polycrystalline diamond compact, which is characterized by comprising the following steps: s1, putting the polycrystalline diamond compact sample into an ultrasonic cleaning machine, and carrying out ultrasonic cleaning by using a cleaning solution; s2, putting the polycrystalline diamond compact sample cleaned by the ultrasonic cleaning machine into an air box for drying; s3, arranging a protective layer at a designated position on the surface of the polycrystalline diamond compact sample; s4, precipitating transition metal in the sample by using a solvent; and S5, drying the sample after ultrasonic cleaning again, and mechanically polishing the sample by using a polishing machine to remove a protective layer arranged on the polycrystalline diamond compact sample.
Preferably, the upper part of the polycrystalline diamond compact sample is in the shape of a circular truncated cone, and the lower part of the polycrystalline diamond compact sample is in the shape of a cylinder; wherein, the position for arranging the protective layer comprises the top surface of the circular truncated cone and the side surface of the cylinder
Preferably, a circular protective layer is arranged on the top surface of the circular truncated cone, and the circle center of the circular protective layer is superposed with the circle center of the top surface of the circular truncated cone; the vertical distance between the edge of the circular protective layer and the side surface of the cylinder is 2-3 mm; the side surface of the cylinder is provided with a protective layer, and the protective layer 3 covers the whole side surface of the cylinder which is away from the bottom surface of the circular truncated cone by a certain distance, wherein the distance is 0.5-1 mm.
Preferably, a thickness of a protective layer disposed on the polycrystalline diamond compact is 5-200 μm, preferably, the protective layer is 10-50 μm; the selective dissolving temperature of the transition metal in the polycrystalline diamond compact is 30-100 ℃, the concentration of the solvent is 0.1-1.5mol/L, and the dissolving time is 48-240 hours.
Preferably, the material for the protective layer includes a noble metal simple substance or alloy, an oxide, a metal nitride, metal boride titanium, diamond-like carbon simple substance, an epoxy resin, an acrylic resin, a urethane resin, a silicon rubber, and a fluorinated rubber, which can resist strong acid corrosion.
Preferably, the method of providing the protective layer on the polycrystalline diamond compact comprises physical vapor deposition, chemical vapor deposition, electroplating, electrophoretic deposition, sol deposition, surface in-situ deposition, and mechanical pressure bonding.
Preferably, the solvent for precipitating the transition metal includes a strong oxidizing agent, a strong acid, a medium strong acid, a weak acid, a mixed solution of any one of the strong oxidizing agent or the strong acid and the medium strong acid or the weak acid, and an aqueous solution of a high-valent metal salt.
Preferably, a protective layer is arranged on the polycrystalline diamond composite sheet by adopting a physical vapor deposition method, the deposition temperature of ion plating is 450 ℃, the deposition time is 2 hours, and the thickness of the deposited aluminum oxide layer is 11 μm.
The ring-removed polycrystalline diamond comprises a polycrystalline diamond composite layer and a hard alloy substrate, wherein the polycrystalline diamond composite layer comprises a transition metal precipitation layer and a transition metal non-precipitation layer.
Preferably, the distance between the bottom angle of the chamfer and the interface of the transition metal precipitated layer and the transition metal unseparated layer below the chamfer of the polycrystalline diamond compact is greater than 0.8 mm; measuring the middle point of a chamfer angle slope of the ring-off polycrystalline diamond compact towards the interior of the composite layer in a direction perpendicular to the chamfer angle slope, wherein the distance between the interface of a transition metal precipitation layer and a transition metal non-precipitation layer and the middle point of the chamfer angle slope is more than 0.8 mm; measuring the diamond composite layer from a position 0.5mm below the chamfer angle as a measurement starting point along a direction vertical to the excircle surface, wherein the distance between the interface of the transition metal precipitation layer and the transition metal unseparated layer and the excircle surface of the cylindrical substrate is more than 0.6 mm; and an annular transition metal precipitation layer is formed at the top of the ring-removed polycrystalline diamond compact, and the width of the ring is 2.2-3.5 mm.
By adopting the technical scheme, the invention mainly has the following technical effects:
1. utilize the solvent to selectively appear the transition metal in the polycrystalline diamond compact that the drilling in-process is influenced the highest position by the temperature through set up the protective layer in polycrystalline diamond compact surperficial assigned position to show hardness, stability, shock resistance and the wearability that improves polycrystalline diamond compact and influenced the highest position by the temperature, make polycrystalline diamond have more permanent life.
2. After the transition metal in the highest part of the polycrystalline diamond compact affected by the temperature in the drilling process is selectively separated out, the protective layer is removed by polishing through mechanical equipment, the processing method is simple and effective, and the method is suitable for industrial batch processing and manufacturing of the ring-removed polycrystalline diamond compact.
3. On the basis of the polycrystalline diamond compact, the transition metal in the highest part of the polycrystalline diamond compact affected by the temperature in the drilling process is selectively separated out, the prior art is fully utilized, and the difficulty coefficient of processing and manufacturing the ring-removing polycrystalline diamond compact is reduced.
Drawings
Fig. 1 is a schematic structural view of a temperature-affected region of a polycrystalline diamond compact during drilling;
fig. 2 is a schematic structural view of a polycrystalline diamond compact sample of the present disclosure;
fig. 3 is a schematic structural view of a protective layer disposed on the polycrystalline diamond compact of the present disclosure;
fig. 4 is a schematic structural view of a ring-out polycrystalline diamond compact of the present disclosure;
fig. 5 is a graph of wear area versus cutting distance for a ring-out polycrystalline diamond compact and a polycrystalline diamond compact.
Wherein the reference numerals have the following meanings:
1. a polycrystalline diamond composite layer; 11. a transition metal precipitate layer; 12. a transition metal non-precipitation layer; 2. a cemented carbide substrate; 3. and a protective layer.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the specification of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the invention. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
Fig. 1 shows an actual thermal distribution of the polycrystalline diamond compact in a drilling application, where a shaded portion is a portion of the polycrystalline diamond compact which is most affected by temperature during the drilling process, that is, a portion of the polycrystalline diamond compact which is most affected by temperature from a section of a lower edge of a chamfer (a connecting portion of a polycrystalline diamond table portion and a cylindrical portion) of the polycrystalline diamond compact is distributed into the composite layer along a working angle of 20 to 35 degrees with respect to a vertical axis of the cylindrical periphery, that is, a size of an angle a in fig. 1 is 20 to 35 °.
Referring to fig. 2-4, in the present invention, the polycrystalline diamond compact sample is composed of a polycrystalline diamond composite layer 1 with a height of 2mm and a cylindrical cemented carbide substrate 2 with a height of 11.2mm, wherein the polycrystalline diamond composite layer 1 is in an integrated structure with a truncated cone shape at the upper end and a cylindrical shape at the lower end, and the diameter of the cylindrical top surface of the polycrystalline diamond composite layer 1 and the diameter of the cylindrical top surface of the cemented carbide substrate 2 are both 15.88 mm.
Firstly, cleaning a polycrystalline diamond compact sample before processing, specifically, placing the polycrystalline diamond compact sample in an ultrasonic cleaning machine by an operator, and cleaning the polycrystalline diamond compact sample by using a cleaning solution, wherein the specific type of the cleaning solution used by the ultrasonic cleaning machine is not limited, and the cleaning solution can be ethanol or acetone; after the ultrasonic cleaning machine cleaned the polycrystalline diamond compact, an operator can transfer the polycrystalline diamond compact into the air box, and the air box is used for drying so as to further process the polycrystalline diamond compact.
Further, before the transition metal in the polycrystalline diamond composite layer is separated out, a protective layer 3 needs to be arranged on the surface of the polycrystalline diamond compact sample, the position, provided with the protective layer 3, of the protective layer 3 on the polycrystalline diamond compact sample is protected by the protective layer 3, so that the transition metal is separated out locally, and the appearance of the transition metal separated out by the polycrystalline diamond compact is controlled.
Further, the step of disposing the protective layer 3 on the polycrystalline diamond compact comprises physical vapor deposition, chemical vapor deposition, electroplating, electrophoretic deposition, sol deposition, surface in-situ deposition, mechanical pressure bonding and the like, and the protective layer 3 can be formed on a specified position of a polycrystalline diamond compact sample by the above method under certain conditions, wherein the material which can be used for the protective layer 3 comprises a noble metal simple substance or alloy which can resist strong acid corrosion, and at least comprises any one of the following metals, such as gold, platinum, tantalum, molybdenum, niobium, rhodium, rhenium and the like; may be an oxide including at least any one of alumina, silica, titania, zirconia, calcia, and the like; may be a metal nitride including at least any one of boron nitride, silicon nitride, aluminum nitride, titanium nitride, and the like; may be a metal boride, including at least any of the following metal borides, such as titanium boride, zirconium boride, and the like; and diamond-like carbon simple substance, epoxy resin, acrylic resin, urethane resin, silicone rubber, fluorinated rubber, and the like. In the present invention, the thickness of the protective layer 3 provided on the polycrystalline diamond compact is 5 to 200 μm, and preferably, the thickness of the protective layer 3 is 10 to 50 μm.
Further, referring to fig. 3, in the present invention, the position where the protective layer 3 is disposed on the polycrystalline diamond compact sample includes a top surface of the truncated cone portion of the polycrystalline diamond composite layer 1 and a side surface of the cylindrical portion of the polycrystalline diamond compact. Specifically, a circular protective layer 3 is arranged on the top surface of the circular truncated cone, the circle center of the circular protective layer 3 is overlapped with the circle center of the top surface of the circular truncated cone, and the distance between the edge of the circular protective layer 3 and the side surface of the cylinder is 2-3 mm; the polycrystalline diamond compact is characterized in that a protective layer 3 is also arranged on the side surface of the cylindrical part of the polycrystalline diamond compact, and the protective layer 3 covers the whole cylindrical side surface which is away from the bottom surface of the circular truncated cone by a certain distance, wherein the distance is 0.5-1 mm. That is, in FIG. 3, the distance f is 2 to 3mm, and the distance g is 0.5 to 1 mm.
According to the invention, the protective layer 3 is arranged on the surface of the polycrystalline diamond compact sample, and the protective layer 3 is utilized to protect the position, provided with the protective layer 3, on the polycrystalline diamond compact sample from corrosion so as to avoid the precipitation of transition metal, so that the transition metal in the position, which is most affected by temperature, in the polycrystalline diamond compact is precipitated, and the thermal stability of the polycrystalline diamond compact in practical drilling application is improved.
Further, after the protective layer 3 is arranged on the polycrystalline diamond compact, a transition metal in the sample can be partially precipitated by using a solvent, specifically, the transition metal in the polycrystalline diamond compact is selectively dissolved by selecting a proper solvent and is transferred into a liquid phase, so that the purpose of partially precipitating the transition metal is achieved. Wherein, the solvent capable of separating out the transition metal comprises a strong oxidant, namely at least one strong oxidant such as hydrogen peroxide, potassium permanganate and the like; it may be a strong acid, that is, it may be a strong acid including at least one of permanganic acid, sulfuric acid, nitric acid, hydrochloric acid, hydrobromic acid, hydroiodic acid, perchloric acid, and the like; it may be a medium strong acid, that is, it may be a medium strong acid including at least one of phosphoric acid, carbonic acid, sulfurous acid, nitrous acid, oxalic acid, etc.; may be a weak acid, i.e., may also include at least one weak acid such as salicylic acid, tartaric acid, hydrofluoric acid, citric acid, terephthalic acid, etc.; and any one of strong oxidizing agent or mixed solution of strong acid and medium strong acid or weak acid; it may also be an aqueous solution of a high valence metal salt, i.e., a solution including at least one of the following, such as ferric chloride, ferric sulfate, copper sulfate, cupric chloride, etc. Wherein, in the step of selecting a proper solvent to soak the polycrystalline diamond compact to selectively dissolve and separate out the transition metal, the soaking temperature is 30-100 ℃, the concentration of the solvent is 0.1-1.5mol/L, and the soaking time is 48-240 h.
And finally, ultrasonically cleaning the polycrystalline diamond compact after the transition metal is separated out, drying, and mechanically polishing by using equipment, for example, processing by using a polishing machine to remove the protective layer 3 arranged on the surface of the polycrystalline diamond compact, thereby finally obtaining the ring-removed polycrystalline diamond compact.
Referring to fig. 3, the finally obtained ring-off polycrystalline diamond compact includes a polycrystalline diamond composite layer 1 and a cemented carbide substrate 2, where the polycrystalline diamond composite layer 1 includes a transition metal precipitation layer 11 and a transition metal non-precipitation layer 12, and specifically, the final structure of the obtained ring-off polycrystalline diamond compact is: the distance between the bottom angle of the chamfer and the interface of the transition metal precipitated layer 11 and the transition metal unseparated layer 12 below the chamfer of the polycrystalline diamond compact is greater than 0.8 mm; measuring the middle point of a chamfer angle slope of the ring-off polycrystalline diamond compact towards the interior of the composite layer in a direction perpendicular to the chamfer angle slope, wherein the distance between the interface of the transition metal precipitation layer 11 and the transition metal non-precipitation layer 12 and the middle point of the chamfer angle slope is more than 0.8 mm; measuring the diamond composite layer from a position 0.5mm below the chamfer angle to the inside of the diamond composite layer along a direction vertical to the excircle surface, wherein the distance between the interface of the transition metal precipitation layer 11 and the transition metal unseparated layer 12 and the excircle surface of the cylindrical substrate is more than 0.6 mm; the top of the ring-off polycrystalline diamond compact forms an annular transition metal precipitation layer 11, the width of the ring is 2.2-3.5mm, namely as shown in figure 6, the width of a is 2.2-3.5mm, the width of b is more than 0.8mm, the distance of c is 0.5mm, the distance of d is more than 0.6mm, and the distance of e is more than 0.8 mm.
The first embodiment is as follows:
in the embodiment, the step of preparing the protective layer 3 on the polycrystalline diamond composite sheet by using the physical vapor deposition method is adopted, wherein the physical vapor deposition method comprises thermal evaporation, sputtering and ion plating, the physical vapor deposition method is generally performed at a relatively low temperature, the temperature is generally lower than 500 ℃, in addition, in the polycrystalline diamond composite sheet, due to the existence of transition metal elements, the temperature for converting a diamond phase into a graphite phase can be obviously reduced, and the temperature is generally only about 700 ℃, so that when the protective layer 3 is prepared on the polycrystalline diamond composite sheet by using the physical vapor deposition method at the temperature below 500 ℃, the diamond phase cannot be converted into the graphite phase, and meanwhile, the preparation of the protective layer 3 by using the physical vapor deposition method has the advantages of low cost, simplicity and reliability in operation, large-scale production and the like.
Specifically, the polycrystalline diamond compact sample which is cleaned by ultrasonic wave and dried is placed in a cavity of an ion plating machine. In this embodiment, the protective layer 3 is prepared by plating alumina on the surface of the polycrystalline diamond compact, wherein an alumina target is disposed in the ion plating machine cavity, the alumina target is ignited first, and the alumina is deposited at a deposition temperature of 450 ℃ for 2 hours, and the thickness of the deposited alumina layer is about 11 μm.
Further, after the protective layer 3 is prepared on the polycrystalline diamond compact, the transition metal in the part of the polycrystalline diamond compact, which is not provided with the protective layer 3, is separated out by soaking the polycrystalline diamond compact sample in dilute nitric acid, wherein the soaking temperature is 50 ℃, the concentration of the dilute nitric acid is 0.5mol/L, and the soaking time is 50 h.
And cleaning the soaked polycrystalline diamond compact sample again, drying, and polishing the protective layer 3 by using a polishing machine.
Example two:
in the embodiment, the protective layer 3 is prepared on the polycrystalline diamond composite sheet by using fluorinated rubber as a packaging protective material, the fluorinated rubber is firstly prepared into a rubber sleeve or a rubber ring, and the fluorinated rubber is compressed on the polycrystalline diamond composite sheet at the position where the protective layer 3 needs to be arranged by using a torque wrench through hard plastics, metals or ceramic materials to realize packaging, wherein the pressure of the torque wrench is 10KN in the packaging process.
Further, after the protective layer 3 is prepared on the polycrystalline diamond compact, the transition metal in the part of the polycrystalline diamond compact, which is not provided with the protective layer 3, is separated out by soaking the polycrystalline diamond compact sample in dilute nitric acid, wherein the soaking temperature is 50 ℃, the concentration of the dilute nitric acid is 0.5mol/L, and the soaking time is 50 hours.
And cleaning the soaked polycrystalline diamond compact sample again, drying, and polishing the protective layer 3 by using a polishing machine.
Comparative example one:
the first comparative example differs from the example in that the polycrystalline diamond compact sample was a polycrystalline diamond compact after the entire surface of the composite layer was treated without differentiation.
Cutting tests are carried out on granite by using a drilling machine on the ring-removed polycrystalline diamond compact obtained in the first embodiment and the polycrystalline diamond compact obtained in the first comparative example, and the relation between the wear area and the cutting distance of the ring-removed polycrystalline diamond compact and the polycrystalline diamond compact is shown in fig. 5, wherein the test results show that when the cutting distance of the polycrystalline diamond compact on the granite is greater than 0.8Km, the wear area of the polycrystalline diamond compact in the first comparative example shows a sharp increase trend along with the increase of the cutting distance; in the ring-off polycrystalline diamond compact of the first embodiment, when the cutting distance on granite exceeds 1.7Km, the abrasion area of the ring-off polycrystalline diamond compact is greatly increased along with the increase of the cutting distance, and a test result is compared and analyzed, so that the thermal stability of the ring-off polycrystalline diamond compact treated by the method is improved by more than 1 time.
Finally, it should be noted that: the embodiment of the present invention is disclosed only as a preferred embodiment of the present invention, which is only used for illustrating the technical solutions of the present invention and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art; the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. The processing method of the ring-removed polycrystalline diamond compact is characterized by comprising the following steps:
s1, putting the polycrystalline diamond compact sample into an ultrasonic cleaning machine, and carrying out ultrasonic cleaning by using a cleaning solution;
s2, putting the polycrystalline diamond compact sample cleaned by the ultrasonic cleaning machine into an air box for drying;
s3, arranging a protective layer at a designated position on the surface of the polycrystalline diamond compact sample;
s4, precipitating transition metal in the sample by using a solvent;
and S5, drying the sample after ultrasonic cleaning again, and mechanically polishing the sample by using a polishing machine to remove a protective layer arranged on the polycrystalline diamond compact sample.
2. The method for processing an annular polycrystalline diamond compact according to claim 1, wherein the upper part of the polycrystalline diamond compact sample is in the shape of a circular truncated cone, and the lower part of the polycrystalline diamond compact sample is in the shape of a cylinder; the position where the protective layer is arranged comprises the top surface of the circular truncated cone and the side surface of the cylinder.
3. The method for processing the ring-off polycrystalline diamond compact as claimed in claim 2, wherein the top surface of the circular truncated cone is provided with a circular protective layer, and the center of the circular protective layer coincides with the center of the top surface of the circular truncated cone; the vertical distance between the edge of the circular protective layer and the side surface of the cylinder is 2-3 mm; the side surface of the cylinder is provided with a protective layer, and the protective layer 3 covers the whole side surface of the cylinder which is away from the bottom surface of the circular truncated cone by a certain distance, wherein the distance is 0.5-1 mm.
4. The method of processing an annulus depletion polycrystalline diamond compact according to any one of claims 1 to 3, wherein the protective layer disposed on the polycrystalline diamond compact has a thickness of 5 to 200 μm, preferably 10 to 50 μm; the selective dissolving temperature of the transition metal in the polycrystalline diamond compact is 30-100 ℃, the concentration of the solvent is 0.1-1.5mol/L, and the dissolving time is 48-240 hours.
5. The method for processing an annular polycrystalline diamond compact according to any one of claims 1 to 3, wherein the material for the protective layer comprises a noble metal simple substance or alloy, an oxide, a metal nitride, a metal boride titanium, a diamond-like carbon simple substance, an epoxy resin, an acrylic resin, a urethane resin, a silicon rubber and a fluorinated rubber which can resist strong acid corrosion.
6. The method of processing an annulled polycrystalline diamond compact according to any of claims 1 to 3, wherein the method of providing a protective layer on the polycrystalline diamond compact comprises physical vapor deposition, chemical vapor deposition, electroplating, electrophoretic deposition, sol-gel deposition, surface in-situ deposition, and mechanical pressure bonding.
7. The method of any one of claims 1 to 3, wherein the solvent for precipitating the transition metal comprises a strong oxidizer, a strong acid, a medium strong acid, a weak acid, a mixed solution of any one of the strong oxidizer or the strong acid and the medium strong acid or the weak acid, and an aqueous solution of a high valence metal salt.
8. The method of claim 1, wherein the protective layer is deposited on the polycrystalline diamond compact by physical vapor deposition, the deposition temperature of the ion plating is 450 ℃, the deposition time is 2 hours, and the thickness of the deposited alumina layer is 11 μm.
9. The ring-removed polycrystalline diamond is characterized by comprising a polycrystalline diamond composite layer (1) and a hard alloy substrate (2), wherein the polycrystalline diamond composite layer (1) comprises a transition metal precipitation layer (11) and a transition metal non-precipitation layer (12).
10. The ring-removed polycrystalline diamond according to claim 9, wherein the distance between the interface of the transition metal precipitated layer (11) and the transition metal unprecipitated layer (12) below the chamfer of the polycrystalline diamond compact and the bottom corner of the chamfer is greater than 0.8 mm; measuring the middle point of a chamfer angle slope of the ring-off polycrystalline diamond compact towards the interior of the composite layer in a direction perpendicular to the chamfer angle slope, wherein the distance between the interface of the transition metal precipitation layer (11) and the transition metal non-precipitation layer (12) and the middle point of the chamfer angle slope is greater than 0.8 mm; measuring the diamond composite layer from a position 0.5mm below the chamfer angle as a measurement starting point along a direction vertical to the excircle surface, wherein the distance between the interface of the transition metal precipitation layer (11) and the transition metal unseparated layer (12) and the excircle surface of the cylindrical substrate is more than 0.6 mm; the top of the ring-removed polycrystalline diamond compact forms an annular transition metal precipitation layer (11), and the width of the ring is 2.2-3.5 mm.
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