CN112968671B - Novel monolithic integration terahertz second harmonic mixer - Google Patents
Novel monolithic integration terahertz second harmonic mixer Download PDFInfo
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Abstract
The invention discloses a novel monolithic integration terahertz second harmonic mixer, and relates to the technical field of terahertz mixers. The mixer comprises a substrate, a mixing circuit is formed on the substrate, the mixing circuit comprises a radio frequency input port, the radio frequency input port is connected with one end of a radio frequency filtering structure through a radio frequency matching structure, the other end of the radio frequency matching structure is divided into two paths, the first path is connected with one end of an intermediate frequency filtering structure, and the second path is connected with the input end of a mixing diode pair; the local oscillator port is connected with one end of the local oscillator filter structure through the local oscillator matching structure, the other end of the local oscillator filter structure is connected with the input end of the mixer diode pair, and the other end of the intermediate frequency filter structure is connected with the intermediate frequency output port. The mixer has mature process and good chip consistency, and can be used for on-chip test and screening.
Description
Technical Field
The invention relates to the technical field of terahertz mixers, in particular to a novel single-chip integrated terahertz second harmonic mixer.
Background
Terahertz (THz) waves refer to electromagnetic waves in the frequency range of 0.3THz to 3THz, where 1 thz=1000 GHz. It is now widely accepted in the industry that the range of terahertz frequencies can be extended to 0.1-10 thz, i.e. frequencies above 100GHz belong to terahertz frequencies. THz wave occupies a unique position in electromagnetic spectrum, has wide application prospect in security inspection imaging, high-speed wireless communication and other aspects, and is the key focusing field in the current international scientific and technological world and industry.
Because it is difficult to obtain a large local oscillation driving power in the terahertz frequency band, the mixer in the terahertz frequency band usually adopts a harmonic mixing mode to reduce the local oscillation frequency to one-nth (n=2, 4, 6 … …) of the radio frequency, and the second harmonic mixer is most commonly used.
The terahertz mixer chip disclosed and reported at home and abroad at present is mainly realized based on a hybrid integration method. And respectively designing and processing a circuit passive structure based on a quartz substrate and a terahertz Schottky diode based on a GaAs base, and integrating a discrete diode and the quartz substrate into a complete mixer circuit through a flip-chip bonding technology. The implementation of such hybrid integrated circuits has a number of limitations that make hybrid integrated mixer chips difficult to use and mass produce.
First, the size of the schottky diode in the terahertz band is very small, typically less than hundred microns, which requires the flip-chip bonding step of the chip to be performed by a very specialized technician, which is extremely inefficient. Even so, the flip-chip shift error is typically in the order of ten microns, which is unacceptable for circuits in the terahertz band, resulting in increased mixing losses. On the other hand, each port of the hybrid integrated mixer chip adopts a waveguide microstrip transitional circuit mode, and the mixer chip must be assembled into a module mode to be tested and used, so that the chip test cannot be directly performed. Because the terahertz frequency band has high frequency and small waveguide size, the mechanical machining precision requirement on the module cavity is extremely high, the machining cost is high, the working time is long, and the research and development period and cost of the terahertz frequency mixer chip are increased.
Some hybrid integrated circuit improvements have also been proposed in which the substrate of the passive structure of the circuit is replaced by a quartz substrate with the same GaAs based substrate as the schottky diode and the passive structure substrate is maintained at the same thickness as the schottky diode. During circuit manufacture, a discrete Schottky diode is manufactured, and then a circuit passive structure is manufactured on the periphery of the diode in a metal sputtering and electroplating mode. The method can realize the integrated design of the chip, and is beneficial to improving the design precision and efficiency. However, this method cannot realize the metal through hole on the back of the substrate when the circuit is fabricated, and the fabricated chip still needs to additionally design a grounded peripheral circuit. Meanwhile, the risk of performance degradation of the prefabricated schottky diode caused by the influence of the subsequent sputtering plating process is also unavoidable.
Disclosure of Invention
The invention aims to solve the technical problem of providing a novel monolithic integration terahertz second harmonic mixer which is mature in process, good in chip consistency and capable of being screened in a chip test.
In order to solve the technical problems, the invention adopts the following technical scheme: the utility model provides a novel monolithic integration terahertz second harmonic mixer which characterized in that: the frequency mixing circuit comprises a radio frequency input port, wherein the radio frequency input port is connected with one end of a radio frequency filtering structure through a radio frequency matching structure, the other end of the radio frequency matching structure is divided into two paths, the first path is connected with one end of an intermediate frequency filtering structure, and the second path is connected with the input end of a frequency mixing diode pair; the local oscillator port is connected with one end of the local oscillator filter structure through the local oscillator matching structure, the other end of the local oscillator filter structure is connected with the input end of the mixer diode pair, and the other end of the intermediate frequency filter structure is connected with the intermediate frequency output port; the radio frequency signal is input by the radio frequency port, sequentially passes through the radio frequency matching structure and the radio frequency filtering structure and then enters the mixing diode pair; the local oscillation signal of the mixer is input through the local oscillation port and then sequentially enters the mixing diode pair after passing through the local oscillation matching structure and the local oscillation filtering structure; the intermediate frequency signal is output from the middle of two diodes of the mixing diode pair and is output through the intermediate frequency filtering structure and the intermediate frequency port.
The further technical proposal is that: the radio frequency input port and the local oscillation port are respectively connected with the matching structure through a straight-blocking plane capacitor.
The further technical proposal is that: the mixer comprises a radio frequency port signal pressure point, the radio frequency port signal pressure point is connected with one end of a first connecting microstrip line through a radio frequency matching microstrip line, the other end of the first connecting microstrip line is connected with one end of a second connecting microstrip line through a radio frequency band-pass filter, the other end of the second connecting microstrip line is connected with one end of a connecting microstrip line between diodes through a third connecting microstrip line, the cathode of one terahertz Schottky mixing diode is connected with the connecting microstrip line between diodes, the anode of the terahertz Schottky mixing diode is grounded, the anode of the other terahertz Schottky mixing diode is connected with the connecting microstrip line between diodes, and the cathode of the terahertz Schottky mixing diode is grounded; the local oscillator port signal voltage point is connected with one end of a local oscillator matching microstrip line through a local oscillator blocking capacitor, the other end of the local oscillator matching microstrip line is connected with one end of a local oscillator low-pass filter through a fourth connecting microstrip line, and the other end of the local oscillator low-pass filter is connected with a connecting microstrip line between diodes through a fifth connecting microstrip line; one end of the intermediate frequency low-pass filter is connected with the second connecting microstrip line, and the other end of the intermediate frequency low-pass filter is connected with the intermediate frequency port signal pressure point.
The further technical proposal is that: the two sides of the RF port signal pressure point are respectively provided with an RF port grounding pressure point, and the RF port grounding pressure points are respectively connected with the metal on the back of the substrate through metal through holes on the back of the connecting substrate to realize grounding.
Preferably, the radio frequency matching microstrip line is implemented in the form of a high-low impedance microstrip line.
Preferably, the rf band-pass filter employs a cross-coupled line filter composed of microstrip lines.
The further technical proposal is that: and two sides of the local oscillator port signal pressure point are respectively provided with a local oscillator port grounding pressure point, and the local oscillator port grounding pressure points are respectively connected with the back metal of the substrate through holes connected with the back metal of the substrate to realize grounding.
Preferably: the local oscillation blocking capacitor adopts an upper metal layer and a lower metal layer in the GaAs diode process to form an upper polar plate and a lower polar plate of the capacitor.
The further technical proposal is that: the intermediate frequency low-pass filter is of a structure of series microstrip lines and parallel open-circuit sector microstrip lines, wherein the equivalent electrical length of the series microstrip lines is one quarter of the radio frequency wavelength.
The further technical proposal is that: and two sides of the intermediate frequency port signal pressing point are respectively provided with an intermediate frequency port grounding pressing point, and the intermediate frequency port grounding pressing points are respectively connected with the metal on the back of the substrate through holes connected with the metal on the back of the substrate to realize grounding.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: the second harmonic mixer is used for simultaneously manufacturing the Schottky diode and the passive circuit structure on the GaAs substrate, a complete terahertz second harmonic mixer circuit can be formed through one process flow, errors introduced by an additional assembly welding process are avoided, and the chip on-chip testing and batch screening can be realized.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
FIG. 1 is a basic topology of a mixer according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a detailed circuit configuration of a mixer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a 180GHz harmonic mixer in an embodiment of the invention;
FIG. 4 is a graph of frequency conversion loss simulation results for the mixer of FIG. 3;
FIG. 5 is a graph of the results of a radio frequency port standing wave ratio (VSWR) simulation of the mixer of FIG. 3;
FIG. 6 is a graph of local oscillator port standing wave ratio (VSWR) simulation results for the mixer of FIG. 3;
FIG. 7 is a graph of intermediate frequency port standing wave ratio (VSWR) simulation results for the mixer of FIG. 3;
wherein: 101. a radio frequency matching structure; 102. a radio frequency filtering structure; 103. a local oscillation filtering structure; 104. a local oscillator matching structure; 105. a blocking plane capacitor; 106. a mixer diode pair; 107. an intermediate frequency filtering structure; 108. A radio frequency input port; 109. a local oscillator port; 110. an intermediate frequency port; 201. a radio frequency matching microstrip line; 202. a radio frequency band pass filter; 203. a local oscillator low pass filter; 204. local oscillation matching microstrip line; 205. local oscillator blocking capacitance; 206. terahertz Schottky mixer diode; 207. a ground; 208. an intermediate frequency low pass filter; 209. a first connection microstrip line; 210. a second connection microstrip line; 211. the third connection microstrip line 212 and the inter-diode connection microstrip line; 213. fifth connecting microstrip line; 214. a fourth connecting microstrip line; 215. a radio frequency port signal pressure point; 216. grounding point of radio frequency port; 217. local oscillator port signal pressure points; 218. local oscillator port grounding point; 219. signal pressure points of the intermediate frequency port; 220. the intermediate frequency port is grounded; 221. a substrate.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
As shown in fig. 1, the embodiment of the invention discloses a novel monolithically integrated terahertz second harmonic mixer, which comprises a substrate 221, wherein a mixer circuit is formed on the substrate 221, the mixer circuit comprises a radio frequency input port 108, the radio frequency input port 108 is connected with one end of a radio frequency filter structure 102 through a radio frequency matching structure 101, the other end of the radio frequency matching structure 102 is divided into two paths, the first path is connected with one end of an intermediate frequency filter structure 107, and the second path is connected with the input end of a mixer diode pair 106; the local oscillation port 109 is connected with one end of the local oscillation filtering structure 103 through the local oscillation matching structure 104, the other end of the local oscillation filtering structure 103 is connected with the input end of the mixer diode pair 106, and the other end of the intermediate frequency filtering structure 107 is connected with the intermediate frequency output port 110; the radio frequency signal is input by the radio frequency port 108, sequentially passes through the radio frequency matching structure 101 and the radio frequency filtering structure 102 and then enters the mixing diode pair 106; after being input by a local oscillation port 109, local oscillation signals of the mixer sequentially pass through a local oscillation matching structure 104 and a local oscillation filtering structure 103 and then enter a mixing diode pair 106; the intermediate frequency signal is output from the middle of the two diodes of the mixing diode pair 106, and is output through the intermediate frequency filtering structure 107 and the intermediate frequency port 110, and further, the radio frequency input port 108 and the local oscillator port 109 are respectively connected with the matching structure through a blocking plane capacitor 105.
For a better illustration of the mixer of the present invention, a specific embodiment of the present invention is illustrated with a monolithically integrated 180GHz second harmonic mixer chip of fig. 2, wherein:
the radio frequency input port 108 comprises a radio frequency port signal pressure point 215 and two radio frequency port grounding pressure points 216, and the radio frequency port grounding pressure points 216 are respectively connected with the metal on the back of the substrate through holes connected with the metal on the back of the substrate to realize grounding;
the radio frequency matching structure 101 is implemented by a radio frequency matching microstrip line 201, and matching is implemented by a high-low impedance microstrip line.
The rf filtering structure 102 is implemented by an rf band-pass filter 202 in the form of a cross-coupled line filter formed by microstrip lines, which filter simultaneously has the function of isolating direct current, so that there is no separate dc blocking planar capacitor 105 on the rf side.
The mixer diode pair 106 is composed of the terahertz schottky mixer diode 206 in fig. 2 and the two inter-diode connection microstrip line 212; the cathode of one terahertz schottky mixing diode 206 is connected with the anode of the other terahertz schottky mixing diode 206 through a microstrip line 212 connected between the diodes to form a mixing diode pair 106, and meanwhile, the anode of the first terahertz schottky mixing diode 206 and the cathode of the second terahertz schottky mixing diode 206 are respectively connected with a through hole connected with the metal on the back of the substrate to form a complete direct current loop;
the local oscillation port 109 comprises a local oscillation port signal pressure point 217 and two local oscillation port grounding pressure points 218, and the local oscillation port grounding pressure points 218 are respectively connected with the back metal of the substrate through holes connected with the back metal of the substrate to realize grounding;
the local oscillation blocking capacitor 205 adopts an upper metal layer and a lower metal layer in the GaAs diode process to form an upper polar plate and a lower polar plate;
the local oscillation matching structure 104 is realized by a local oscillation matching microstrip line 204, and matching is realized by adopting a mode that a high-low impedance microstrip line is connected with a parallel open microstrip line;
the local oscillation filtering structure 103 is realized by a local oscillation low-pass filter 203, adopts an improved compact microstrip resonance unit structure, has the advantages of compact structure and small loss, and can effectively reduce the size of an integral chip;
the intermediate frequency filtering structure 107 is a structure of a series microstrip line and a parallel open sector microstrip line. The equivalent electrical length of the series microstrip line is one quarter of the radio frequency wavelength, so that radio frequency signals can be effectively isolated from leaking to the intermediate frequency port. The parallel open-circuit sector microstrip line in the structure can also be replaced by the straight-blocking plane capacitor 105 with corresponding capacitance value, which is beneficial to further reducing the layout size.
The intermediate frequency port 110 comprises an intermediate frequency port signal voltage point 219 and two intermediate frequency port grounding voltage points 220, wherein the intermediate frequency port grounding voltage points 220 are respectively connected with the back metal of the substrate through holes connected with the back metal of the substrate to realize grounding.
The first connection microstrip line 209, the second connection microstrip line 210, the third connection microstrip line 211, the inter-diode connection microstrip line 212, the fifth connection microstrip line 213, and the fourth connection microstrip line 214 are connection transition structures among various parts of the circuit;
the substrate 221 defines the length-width dimensions of the above-described mixer;
further, as shown in fig. 2, the application discloses a novel monolithically integrated terahertz second harmonic mixer, where the mixer includes a radio frequency port signal voltage point 215, where the radio frequency port signal voltage point 215 is connected to one end of a first connection microstrip line 209 through a radio frequency matching microstrip line 201, the other end of the first connection microstrip line 209 is connected to one end of a second connection microstrip line 210 through a radio frequency band-pass filter 202, the other end of the second connection microstrip line 210 is connected to one end of a inter-diode connection microstrip line 212 through a third connection microstrip line 211, the negative electrode of one terahertz schottky mixer diode 206 is connected to the inter-diode connection microstrip line 212, the positive electrode of the other terahertz schottky mixer diode 206 is grounded 207, and the positive electrode of the other terahertz schottky mixer diode 206 is connected to the inter-diode connection microstrip line 212, and the negative electrode of the other terahertz schottky mixer diode 206 is grounded 207; the local oscillator port signal voltage point 217 is connected with one end of the local oscillator matching microstrip line 204 through the local oscillator blocking capacitor 205, the other end of the local oscillator matching microstrip line 204 is connected with one end of the local oscillator low-pass filter 203 through the fourth connecting microstrip line 214, and the other end of the local oscillator low-pass filter 203 is connected with the inter-diode connecting microstrip line 212 through the fifth connecting microstrip line 213; one end of the intermediate frequency low pass filter 208 is connected to the second connection microstrip line 210, and the other end of the intermediate frequency low pass filter 210 is connected to the intermediate frequency port signal voltage point 219.
FIG. 3 is a schematic diagram of a 180GHz harmonic mixer; fig. 4 is a simulation result of the frequency conversion loss of the above mixer, and the working conditions are as follows: the radio frequency range is 160GHz to 200GHz; the local oscillation frequency ranges from 79.5GHz to 99.5GHz; intermediate frequency 1GHz. Fig. 5 is a simulation result of standing wave ratio (VSWR) of the radio frequency port of the mixer, and the working conditions are as follows: the radio frequency ranges from 160GHz to 200GHz; the local oscillation frequency ranges from 79.5GHz to 99.5GHz; intermediate frequency 1GHz. Fig. 6 is a simulation result of standing wave ratio (VSWR) of a local oscillation port of the above mixer, and the working conditions are: the radio frequency ranges from 160GHz to 200GHz; the local oscillation frequency ranges from 79.5GHz to 99.5GHz; intermediate frequency 1GHz. Fig. 7 is a simulation result of standing wave ratio (VSWR) of the intermediate frequency port of the mixer, and the working conditions are: the radio frequency ranges from 160GHz to 200GHz; the local oscillation frequency ranges from 79.5GHz to 99.5GHz; intermediate frequency 1GHz.
Claims (10)
1. The utility model provides a novel monolithic integration terahertz second harmonic mixer which characterized in that: the frequency mixing circuit comprises a substrate (221), wherein the substrate (221) is provided with a frequency mixing circuit, the frequency mixing circuit comprises a radio frequency input port (108), the radio frequency input port (108) is connected with one end of a radio frequency filtering structure (102) through a radio frequency matching structure (101), the other end of the radio frequency matching structure (102) is divided into two paths, the first path is connected with one end of an intermediate frequency filtering structure (107), and the second path is connected with the input end of a frequency mixing diode pair (106); the local oscillation port (109) is connected with one end of the local oscillation filtering structure (103) through the local oscillation matching structure (104), the other end of the local oscillation filtering structure (103) is connected with the input end of the mixer diode pair (106), and the other end of the intermediate frequency filtering structure (107) is connected with the intermediate frequency output port (110); the radio frequency signal is input through a radio frequency port (108) and then sequentially passes through a radio frequency matching structure (101) and a radio frequency filtering structure (102) and then enters a mixing diode pair (106); the local oscillation signal of the mixer is input by a local oscillation port (109) and then sequentially passes through a local oscillation matching structure (104) and a local oscillation filtering structure (103) and then enters a mixing diode pair (106); the intermediate frequency signal is output from the middle of two diodes of the mixing diode pair (106), and is output through the intermediate frequency filtering structure (107) and the intermediate frequency port (110); the second harmonic mixer is characterized in that a Schottky diode and a passive circuit structure are simultaneously manufactured on a GaAs substrate, and a complete terahertz second harmonic mixer circuit is formed through a primary process flow.
2. The novel monolithically integrated terahertz second harmonic mixer of claim 1, wherein: the radio frequency input port (108) and the local oscillation port (109) are respectively connected with the matching structure through a straight-blocking plane capacitor (105).
3. The novel monolithically integrated terahertz second harmonic mixer of claim 1, wherein: the mixer comprises a radio frequency port signal pressure point (215), the radio frequency port signal pressure point (215) is connected with one end of a first connecting microstrip line (209) through a radio frequency matching microstrip line (201), the other end of the first connecting microstrip line (209) is connected with one end of a second connecting microstrip line (210) through a radio frequency band-pass filter (202), the other end of the second connecting microstrip line (210) is connected with one end of an inter-diode connecting microstrip line (212) through a third connecting microstrip line (211), the cathode of one terahertz Schottky mixer diode (206) is connected with the inter-diode connecting microstrip line (212), the anode of the other terahertz Schottky mixer diode (206) is grounded (207), and the anode of the other terahertz Schottky mixer diode (206) is grounded (207); the local oscillator port signal voltage point (217) is connected with one end of a local oscillator matching microstrip line (204) through a local oscillator blocking capacitor (205), the other end of the local oscillator matching microstrip line (204) is connected with one end of a local oscillator low-pass filter (203) through a fourth connecting microstrip line (214), and the other end of the local oscillator low-pass filter (203) is connected with a diode connecting microstrip line (212) through a fifth connecting microstrip line (213); one end of the intermediate frequency low-pass filter (208) is connected with the second connecting microstrip line (210), and the other end of the intermediate frequency low-pass filter (210) is connected with the intermediate frequency port signal pressure point (219).
4. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: two sides of the radio frequency port signal pressure point (215) are respectively provided with a radio frequency port grounding pressure point (216), and the radio frequency port grounding pressure points (216) are respectively connected with the metal on the back of the substrate through metal through holes on the back of the connecting substrate to realize grounding.
5. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: the radio frequency matching microstrip line (201) is implemented in the form of a high-low impedance microstrip line.
6. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: the radio frequency band-pass filter (202) employs a cross-coupled line filter composed of microstrip lines.
7. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: two sides of the local oscillation port signal pressure point (217) are respectively provided with a local oscillation port grounding pressure point (218), and the local oscillation port grounding pressure points (218) are respectively connected with the back metal of the substrate through holes connected with the back metal of the substrate to realize grounding.
8. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: the local oscillation blocking capacitor (205) adopts an upper metal layer and a lower metal layer in the GaAs diode process to form an upper polar plate and a lower polar plate of the capacitor.
9. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: the intermediate frequency low-pass filter (208) is a structure of a series microstrip line and a parallel open-circuit sector microstrip line, wherein the equivalent electrical length of the series microstrip line is one quarter of the radio frequency wavelength.
10. The novel monolithically integrated terahertz second harmonic mixer of claim 3, wherein: and two sides of the intermediate frequency port signal pressing point (219) are respectively provided with an intermediate frequency port grounding pressing point (220), and the intermediate frequency port grounding pressing points (220) are respectively connected with the back metal of the substrate through holes connected with the back metal of the substrate to realize grounding.
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