CN112968030B - Display panel and manufacturing method thereof - Google Patents
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- CN112968030B CN112968030B CN202011643510.2A CN202011643510A CN112968030B CN 112968030 B CN112968030 B CN 112968030B CN 202011643510 A CN202011643510 A CN 202011643510A CN 112968030 B CN112968030 B CN 112968030B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 136
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- 239000007788 liquid Substances 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 7
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
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- 229910052802 copper Inorganic materials 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
The invention relates to a display panel and a manufacturing method thereof. The display panel comprises a substrate, a plurality of substrate electrode groups, a light-emitting device and a plurality of conductive parts, wherein the array is arranged on the substrate, and one substrate electrode group comprises a positive electrode and a negative electrode; the light-emitting device is positioned on the substrate between the positive electrode and the negative electrode in the substrate electrode group and comprises a body structure, a first electrode and a second electrode, wherein the first electrode and the second electrode are respectively positioned at two sides of the body structure; the conductive part includes a first conductive part located on the substrate between the positive electrode and the first electrode to electrically connect the positive electrode and the first electrode, and a second conductive part located on the substrate between the negative electrode and the second electrode to electrically connect the negative electrode and the second electrode. The display panel does not need to arrange solder paste between the light-emitting device and the substrate, so that the brightness and the chromaticity of the display panel are ensured to be uniform, and the display effect of the display panel is ensured to be good.
Description
Technical Field
The invention relates to the field of display, in particular to a display panel and a manufacturing method thereof.
Background
The LED (Light Emitting Diode) has the advantages of high brightness, energy saving, environmental protection, fast response, beautiful color, long service life, etc., and is widely applied in the fields of illumination, display, etc. Especially, the LED display screen is widely applied to scenes such as indoor and outdoor display, monitoring centers, advertisement/media display, stages and the like. With the continuous development of the technology, the resolution of the image is higher and higher, and the dot pitch of the LED display screen is smaller and smaller. In order to realize a small-pitch LED display screen, especially a dot pitch of 1.5mm or less, Mini LED (Mini Light Emitting Diode) and Micro LED (Micro Light Emitting Diode) technologies are proposed in the industry.
Compared with the traditional LCD and OLED (Organic electroluminescent Display), the Mini LED and Micro LED technology has higher brightness, wider color gamut, faster refresh rate and infinite size, and the Mini LED and Micro LED have many advantages to make them more advantageous in high-end Display industry, but the Mini LED and Micro LED currently have some problems restricting their development, such as too high cost, and the uniformity of brightness and chromaticity is inferior to that of LCD and OLED.
Actually, the main reasons for the uneven brightness and chromaticity of the light emitting devices such as the LED lamps are: the bonding mode of luminescent device such as current LED lamp and base plate is on the base plate coating tin cream, then shifts the LED lamp to the base plate on, the electrode alignment of LED lamp scribbles the electrode of tin cream, and the uneven LED height that can cause of being heated when tin cream thickness is uneven, pressure inequality and heating, and the lamp pearl height unevenness will lead to the uneven and chroma uneven of whole face luminance of display screen, influences the quality of display screen.
Therefore, a solution for improving the brightness uniformity of the display panel is needed.
Disclosure of Invention
In view of the foregoing disadvantages of the prior art, an object of the present application is to provide a display panel and a method for fabricating the same, which aims to solve the problem of low uniformity of luminance and chromaticity of the display panel in the prior art.
A display panel includes a substrate, a plurality of substrate electrode groups, a light emitting device, and a plurality of conductive portions, wherein a plurality of the substrate electrode groups are arrayed on the substrate, one of the substrate electrode groups includes one positive electrode and one negative electrode; one of the light emitting devices is positioned on the substrate between the positive electrode and the negative electrode in one of the substrate electrode groups, and the light emitting device comprises a body structure, a first electrode and a second electrode, wherein the first electrode and the second electrode are respectively positioned at two sides of the body structure; the conductive portion includes a first conductive portion located on the substrate between the positive electrode and the first electrode to electrically connect the positive electrode and the first electrode, and a second conductive portion located on the substrate between the negative electrode and the second electrode to electrically connect the negative electrode and the second electrode.
In the above display panel, the first electrode and the second electrode of the light emitting device are disposed on two sides of the body structure, and the substrate is provided with a plurality of substrate electrode groups, the light emitting device is located between the positive electrode and the negative electrode in one of the substrate electrode groups, and the positive electrode and the first electrode have a space therebetween, and the negative electrode and the second electrode have a space therebetween, the first conductive part is located in the space between the positive electrode and the first electrode, thereby achieving electrical connection between the positive electrode and the first electrode, and the second conductive part is located in the space between the negative electrode and the second electrode, thereby achieving electrical connection between the negative electrode and the second electrode, and further achieving electrical connection between the substrate and the light emitting device. In the scheme, the electric connection between the substrate and the light-emitting device can be realized without arranging the solder paste between the light-emitting device and the substrate, the problem that the height of the light-emitting device is uneven due to the fact that the solder paste is arranged between the substrate and the light-emitting device in the prior art is avoided, the brightness and the chromaticity of the display panel are guaranteed to be uniform, and the display effect of the display panel is guaranteed to be good.
Optionally, the display panel further includes a support structure, the support structure is located on the substrate, and the positive electrode and/or the negative electrode are located on a sidewall of the support structure and are in contact with the substrate. The supporting structure is arranged on the substrate, the height of the supporting structure is adjusted, so that the height of the positive electrode and/or the negative electrode can be further higher, the position of the positive electrode or the negative electrode on the side wall of the supporting structure is ensured to be larger than the contact area of the first electrode, and the position of the positive electrode or the negative electrode on the side wall of the supporting structure is ensured to be larger than the contact area of the second electrode.
Optionally, the material of the support structure comprises a photoresist.
Optionally, the light emitting device comprises a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer and an insulating layer, wherein the N-type semiconductor layer is located on a part of the surface of the substrate; the active layer is positioned on the part of the surface of the N-type semiconductor layer far away from the substrate; the P-type semiconductor layer is positioned on the surface of the active layer, which is far away from the N-type semiconductor layer, and the substrate, the N-type semiconductor layer, the active layer and the P-type semiconductor layer form a preparation structure; the insulating layer is located on the surface and the side wall of the preliminary structure, the insulating layer is not arranged on part of the surface and/or part of the side wall of the N-type semiconductor layer, the insulating layer is not arranged on part of the surface and/or part of the side wall of the P-type semiconductor layer, the first electrode is in contact with the surface and/or the side wall of the N-type semiconductor layer, on which the insulating layer is not arranged, and the second electrode is in contact with the surface and/or the side wall of the P-type semiconductor layer, on which the insulating layer is not arranged. Electrons provided by the N-type semiconductor and holes provided by the P-type semiconductor are subjected to recombination reaction in the active layer to generate photons.
Optionally, the insulating layer is not disposed on a portion of the surface of the N-type semiconductor layer, and the insulating layer is not disposed on a portion of the sidewall of the P-type semiconductor layer.
Optionally, the first electrode is further located on a surface of the insulating layer, and the second electrode is further located on a surface of the insulating layer.
Optionally, the light emitting device further includes an electric field dispersion layer, the electric field dispersion layer is located between the insulating layer and the P-type semiconductor layer, the electric field dispersion layer is used for homogenizing electric field distribution of the light emitting device, and the insulating layer is further located on a side wall of the electric field dispersion layer.
Optionally, the material of the electric field dispersion layer comprises indium tin oxide.
Optionally, the material of the conductive part comprises nano silver paste.
Based on the same inventive concept, the present application further provides a manufacturing method of a display panel, including: forming a substrate; forming a plurality of substrate electrode groups arranged in an array on the substrate, wherein one substrate electrode group comprises a positive electrode and a negative electrode; forming a light emitting device comprising a body structure, a first electrode and a second electrode, the first electrode and the second electrode being located on two sides of the body structure, respectively; transferring the light emitting device to the substrate between the positive electrode and the negative electrode in one of the substrate electrode sets; disposing a conductive liquid between the negative electrode and the second electrode and between the positive electrode and the first electrode; and solidifying the conductive liquid to form a first conductive part and a second conductive part, wherein the first conductive part is electrically connected with the positive electrode and the first electrode, and the second conductive part is used for electrically connecting the negative electrode and the second electrode.
The manufacturing method of the display panel comprises the steps of firstly forming a substrate; then forming a plurality of substrate electrode groups arranged in an array on the substrate; forming a light-emitting device, wherein the light-emitting device comprises a body structure, a first electrode and a second electrode, and the first electrode and the second electrode are respectively positioned on two sides of the body structure; then transferring the light emitting device to the substrate between the positive electrode and the negative electrode in one of the substrate electrode sets; then, conductive liquid is arranged between the negative electrode and the second electrode and between the positive electrode and the first electrode; and finally, solidifying the conductive liquid to form a first conductive part and a second conductive part. According to the method, the electric connection between the substrate and the light-emitting device can be realized without arranging solder paste between the light-emitting device and the substrate, the problem that the height of the light-emitting device is uneven due to the fact that the solder paste is arranged between the substrate and the light-emitting device in the prior art is avoided, the brightness and the chromaticity of the display panel are better guaranteed to be uniform, and the display effect of the display panel is better guaranteed.
Based on the same inventive concept, the application also provides an electronic device comprising any one of the display panels or the display panel manufactured by the manufacturing method.
The electronic device comprises any one of the display panels or the display panel manufactured by the manufacturing method.
In the electronic equipment, the first electrode and the second electrode of the light-emitting device are arranged on two sides of the body structure of the electronic equipment, a plurality of substrate electrode groups are arrayed on the substrate, the light-emitting device is positioned between a positive electrode and a negative electrode in one substrate electrode group, a gap is formed between the positive electrode and the first electrode, a gap is formed between the negative electrode and the second electrode, a first conductive part is positioned in the gap between the positive electrode and the first electrode so as to realize the electric connection between the positive electrode and the first electrode, and a second conductive part is positioned in the gap between the negative electrode and the second electrode so as to realize the electric connection between the substrate and the light-emitting device. In the electronic equipment, the electric connection between the substrate and the light-emitting device can be realized without arranging solder paste between the light-emitting device and the substrate, so that the problem that the height of the light-emitting device is uneven due to the fact that the solder paste is arranged between the substrate and the light-emitting device in the prior art is avoided, the uniformity of the brightness and the chromaticity of the electronic equipment is better ensured, and the good display effect of the electronic equipment is ensured.
Drawings
Fig. 1 is a schematic view of a display panel according to an embodiment of the present application;
fig. 2 and 3 are schematic views of light emitting devices according to two specific embodiments of the present application, respectively;
FIG. 4 shows a schematic diagram of a process for forming a display panel according to an embodiment of the present application;
fig. 5 to 7 are schematic views illustrating a process of forming a light emitting device according to an embodiment of the present application.
Description of reference numerals:
100. a substrate; 101. a positive electrode; 102. a light emitting device; 103. a body structure; 104. a first electrode; 105. a second electrode; 106. a first conductive portion; 107. a second conductive portion; 108. a support structure; 109. a negative electrode; 200. a substrate; 201. an N-type semiconductor layer; 202. an active layer; 203. a P-type semiconductor layer; 204. an insulating layer; 205. an electric field dispersion layer.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In view of the foregoing, it is desirable to provide a display panel and a method for fabricating the same to solve the above-mentioned problems, and the details of which will be described in the following embodiments.
According to an exemplary embodiment of the present application, there is provided a display panel, as shown in fig. 1, including a substrate 100, substrate electrode groups, a light emitting device 102, and a plurality of conductive portions, wherein one substrate electrode group includes a positive electrode 101 and a negative electrode 109, and a plurality of the substrate electrode groups are arrayed on the substrate 100; a light emitting device 102 disposed on the substrate 100 between the positive electrode 101 and the negative electrode 109 in a substrate electrode group, the light emitting device 102 comprising a body structure 103, a first electrode 104 and a second electrode 105, the first electrode 104 and the second electrode 105 being disposed on two sides of the body structure 103; the conductive part includes a first conductive part 106 and a second conductive part 107, the first conductive part 106 is located on the substrate 100 between the positive electrode 101 and the first electrode 104 to electrically connect the positive electrode 101 and the first electrode 104, and the second conductive part 107 is located on the substrate 100 between the negative electrode 109 and the second electrode 105 to electrically connect the negative electrode 109 and the second electrode 105.
In the display panel of the present application, the first electrode and the second electrode of the light emitting device are disposed on both sides of the body structure, and the substrate is provided with a plurality of substrate electrode groups, the light emitting device is disposed between the positive electrode and the negative electrode in one of the substrate electrode groups, and the positive electrode and the first electrode have a space therebetween, and the negative electrode and the second electrode have a space therebetween, the first conductive part is disposed in the space between the positive electrode and the first electrode, thereby achieving electrical connection between the positive electrode and the first electrode, and the second conductive part is disposed in the space between the negative electrode and the second electrode, thereby achieving electrical connection between the negative electrode and the second electrode, and further achieving electrical connection between the substrate and the light emitting device. In the scheme, the electric connection between the substrate and the light-emitting device can be realized without arranging the solder paste between the light-emitting device and the substrate, the problem that the height of the light-emitting device is uneven due to the fact that the solder paste is arranged between the substrate and the light-emitting device in the prior art is avoided, the brightness and the chromaticity of the display panel are guaranteed to be uniform, and the display effect of the display panel is guaranteed to be good.
In a specific embodiment, the light emitting device may be an LED, a Micro LED, or a Mini LED, but the light emitting device may also be any other light emitting device in the prior art.
In another specific embodiment of the present application, the active layer may be a MQW (Multiple Quantum Well) layer.
According to a specific embodiment of the present application, as shown in fig. 1, the display panel further includes a support structure 108, the support structure 108 is located on the substrate 100, and the positive electrodes 101 and/or the negative electrodes 109 are located on the sidewalls of the support structure 108 and are in contact with the substrate 100, that is, the positive electrodes are located on the support structure in a one-to-one correspondence, and/or the negative electrodes are located on the support structure in a one-to-one correspondence. The supporting structure is arranged on the substrate, the height of the supporting structure is adjusted, so that the contact area between the positive electrode or the negative electrode on the side wall of the supporting structure and the first electrode is large, the contact area between the positive electrode or the negative electrode on the side wall of the supporting structure and the second electrode is large, the manufacturing process is easy to realize, the electrical performance of the positive electrode and the first electrode is good, the electrical performance of the negative electrode and the second electrode is good, and the luminous performance of the display panel is good.
In order to simplify the steps of the manufacturing process of the substrate electrode assembly, in a specific embodiment, as shown in fig. 1, the positive electrode 101 and/or the negative electrode 109 may also be located on a portion of the surface of the supporting structure 108.
In practical applications, the material of the support structure includes photoresist. Of course, the material of the support structure may also comprise other possible materials.
The material of the positive electrode and/or the negative electrode comprises one or more of Al, Cu or transparent indium tin oxide. Of course, the material of the positive electrode and/or the negative electrode may also include other feasible materials, and those skilled in the art can select suitable materials to form the positive electrode and/or the negative electrode according to actual situations.
According to another specific embodiment of the present application, as shown in fig. 2 and 3, the light emitting device 102 includes a substrate 200, an N-type semiconductor layer 201, an active layer 202, a P-type semiconductor layer 203, and an insulating layer 204, wherein the N-type semiconductor layer 201 is located on a portion of a surface of the substrate 200; the active layer 202 is located on a portion of the surface of the N-type semiconductor layer 201 away from the substrate 200; the P-type semiconductor layer 203 is located on a surface of the active layer 202 away from the N-type semiconductor layer 201, and the substrate 200, the N-type semiconductor layer 201, the active layer 202, and the P-type semiconductor layer 203 form a preliminary structure; the insulating layer 204 is located on the surface and the sidewall of the preliminary structure, the insulating layer 204 is not provided on a part of the surface and/or a part of the sidewall of the N-type semiconductor layer 201, the insulating layer 204 is not provided on a part of the surface and/or a part of the sidewall of the P-type semiconductor layer 203, the first electrode 104 is in contact with the surface and/or the sidewall of the N-type semiconductor layer 201 on which the insulating layer 204 is not provided, and the second electrode 105 is in contact with the surface and/or the sidewall of the P-type semiconductor layer 203 on which the insulating layer 204 is not provided. The electrons provided by the N-type semiconductor and the holes provided by the P-type semiconductor are recombined in the active layer to generate photons.
In a specific embodiment of the present application, the insulating layer may be a DBR (Distributed Bragg Reflector) layer. In practical applications, the suitable insulating layer can be selected according to practical situations.
In a specific embodiment, the insulating layer is not provided on a part of the surface and/or a part of the sidewall of the N-type semiconductor layer, and in a first case, the insulating layer is not provided on a part of the surface and a part of the sidewall of the N-type semiconductor layer, and in this case, the first electrode is in contact with the surface and the sidewall of the N-type semiconductor layer on which the insulating layer is not provided; second, the insulating layer is not provided on a part of the surface of the N-type semiconductor layer, and in this case, the first electrode is in contact with the surface of the N-type semiconductor layer on which the insulating layer is not provided; thirdly, the insulating layer is not formed on a portion of the sidewall of the N-type semiconductor layer, and in this case, the first electrode is in contact with the sidewall of the N-type semiconductor layer on which the insulating layer is not formed. The insulating layer is not disposed on a portion of the surface and/or a portion of the sidewall of the P-type semiconductor layer, and there are three corresponding cases, which are similar to the case of the N-type semiconductor layer, and are not described herein again. The insulating layer is used for preventing unnecessary layers from being conducted with each other, and the quality of the light-emitting device is guaranteed to be high.
In still another embodiment of the present invention, as shown in fig. 2 and 3, the insulating layer is not disposed on a portion of the surface of the N-type semiconductor layer, and the insulating layer is not disposed on a portion of the sidewall of the P-type semiconductor layer.
In order to simplify the steps of the manufacturing process of the first electrode and the second electrode, according to another specific embodiment of the present application, as shown in fig. 3, the first electrode 104 is further located on the surface of the insulating layer 204, and the second electrode 105 is further located on the surface of the insulating layer 204. Of course, it is also possible to remove the first electrode and the second electrode on the surface of the insulating layer, and only the first electrode 104 and the second electrode 105 on the sidewall remain, as in the structure shown in fig. 2.
According to another specific embodiment of the present application, as shown in fig. 2 and 3, the light emitting device 102 further includes an electric field spreading layer 205, the electric field spreading layer 205 is disposed between the insulating layer 204 and the P-type semiconductor layer 203, the electric field spreading layer 205 is configured to uniform an electric field distribution of the light emitting device, and the insulating layer 204 is further disposed on a sidewall of the electric field spreading layer 205.
In practical applications, the material of the electric field dispersion layer may comprise any material that is feasible in the prior art, and in a specific embodiment, the material of the electric field dispersion layer comprises indium tin oxide.
Of course, in practical applications, the material of the electric field dispersion layer may also be other transparent and conductive materials, and those skilled in the art can select suitable materials to form the electric field dispersion layer according to practical situations.
In another specific embodiment of the present application, the material of the conductive portion includes nano silver paste. Of course, the conductive part may also comprise other conductive materials, such as other conductive liquids, etc.
According to another exemplary embodiment of the present application, there is also provided a method of manufacturing a display panel, including the steps of:
step S101, forming a substrate;
step S102, forming a plurality of substrate electrode groups arranged in an array on the substrate, wherein one substrate electrode group comprises a positive electrode 101 and a negative electrode 109;
step S103, forming a light-emitting device, wherein the light-emitting device comprises a body structure, a first electrode and a second electrode, and the first electrode and the second electrode are respectively positioned on two sides of the body structure;
step S104 of transferring the light emitting device to the substrate between the positive electrode and the negative electrode in one of the substrate electrode groups;
a step S105 of disposing a conductive liquid between the positive electrode and the second electrode and between the negative electrode and the first electrode;
step S106 is to solidify the conductive liquid to form a first conductive part and a second conductive part, wherein the first conductive part is electrically connected to the positive electrode and the first electrode, and the second conductive part is electrically connected to the negative electrode and the second electrode, so as to obtain the display panel shown in fig. 1.
The manufacturing method of the display panel comprises the steps of firstly forming a substrate; then forming a plurality of substrate electrode groups arranged in an array on the substrate; forming a light-emitting device, wherein the light-emitting device comprises a body structure, a first electrode and a second electrode, and the first electrode and the second electrode are respectively positioned at two sides of the body structure; transferring said light emitting device to said substrate between said positive electrode and said negative electrode in one of said sets of substrate electrodes; arranging conductive liquid between the negative electrode and the second electrode and between the positive electrode and the first electrode; finally, the conductive liquid is solidified to form a first conductive part and a second conductive part. According to the method, the electric connection between the substrate and the light-emitting device can be realized without arranging the solder paste between the light-emitting device and the substrate, the problem that the height of the light-emitting device is uneven due to the fact that the solder paste is arranged between the substrate and the light-emitting device in the prior art is avoided, the brightness and the chromaticity of the display panel are guaranteed to be uniform, and the display effect of the display panel is guaranteed to be good.
In a specific embodiment of the present application, after forming the substrate, before forming a plurality of substrate electrode sets arranged in an array on the substrate, the method further includes: a plurality of support structures 108 are formed on the substrate 100 by coating, exposing and developing processes on the substrate to obtain the structure shown in fig. 4.
In practical applications, the material of the support structure may include photoresist, but of course, the material of the support structure may also include other materials.
According to another specific embodiment of the present application, a plurality of substrate electrode sets arranged in an array are formed on the substrate, including: and forming the substrate electrode group on the side wall of the supporting structure through coating, exposing, developing and etching processes, wherein the positive electrode and/or the negative electrode are positioned on the side wall of the supporting structure and are in contact with the substrate. The supporting structure is arranged on the substrate, the positive electrode and/or the negative electrode are formed on the side wall of the supporting structure, the contact area between the positive electrode or the negative electrode on the side wall of the supporting structure and the first electrode can be ensured to be larger, the contact area between the positive electrode or the negative electrode on the side wall of the supporting structure and the second electrode is ensured to be larger, the manufacturing process is ensured to be easy to realize, the electrical property of the positive electrode and the first electrode is ensured to be better, the electrical property of the negative electrode and the second electrode is ensured to be better, and the light emitting property of the display panel is further ensured to be better.
In order to simplify the steps of the manufacturing process of the substrate electrode assembly, in a specific embodiment, as shown in fig. 1 and 4, the positive electrode and/or the negative electrode may also be located on a portion of the surface of the support structure.
In a specific embodiment, the material of the positive electrode and/or the negative electrode in the substrate electrode group includes one or more of Al, Cu, or transparent indium tin oxide.
In yet another specific embodiment of the present application, a light emitting device is formed comprising:
sequentially forming an N-type semiconductor, an active layer and a P-type semiconductor on a substrate to obtain a structure shown in FIG. 5;
forming an electric field distribution layer on the P-type semiconductor through coating, exposing, developing and etching processes, wherein the electric field distribution layer is used for homogenizing the electric field distribution of the light-emitting device to obtain a structure as shown in fig. 6, and the substrate, the N-type semiconductor layer, the active layer and the P-type semiconductor layer form a preliminary structure;
forming an insulating layer by coating, exposing, developing and etching processes, wherein the insulating layer is positioned on the surface and the side wall of the preparation structure, part of the surface and/or part of the side wall of the N-type semiconductor layer is not provided with the insulating layer, part of the surface and/or part of the side wall of the P-type semiconductor layer is not provided with the insulating layer, and the insulating layer is also positioned on the side wall of the electric field dispersion layer;
and forming a first electrode and a second electrode, wherein the first electrode is in contact with the surface and/or the sidewall of the N-type semiconductor layer where the insulating layer is not provided, and the second electrode is in contact with the surface and/or the sidewall of the P-type semiconductor layer where the insulating layer is not provided.
In a specific embodiment of the present application, the active layer may be an MQW (Multiple Quantum Well) layer.
According to another specific embodiment of the present application, as shown in fig. 7, the insulating layer is a DBR (Distributed Bragg Reflector) layer, the insulating layer is located on a surface and a sidewall of the preliminary structure, a portion of the surface of the N-type semiconductor layer is not provided with the insulating layer, a portion of the sidewall of the P-type semiconductor layer is not provided with the insulating layer, and the insulating layer is also located on a surface and a portion of the sidewall of the electric field dispersion layer, so as to obtain the structure shown in fig. 7.
In another specific embodiment of the present application, the first electrode is in contact with a surface of the N-type semiconductor layer where the insulating layer is not disposed, and the second electrode is in contact with a sidewall of the P-type semiconductor layer where the insulating layer is not disposed, so as to obtain the light emitting device structure shown in fig. 2 and 3.
According to still another exemplary embodiment of the present application, there is further provided an electronic device, where the electronic device includes any one of the display panels described above, or the display panel manufactured by the manufacturing method described above.
The electronic device comprises any one of the display panel or the display panel manufactured by the manufacturing method.
In the electronic apparatus, the first electrode and the second electrode of the light emitting device are disposed on both sides of the body structure, and a plurality of substrate electrode groups are arrayed on the substrate, the light emitting device is disposed between the positive electrode and the negative electrode in one substrate electrode group, and the positive electrode and the first electrode have a space therebetween, and the negative electrode and the second electrode have a space therebetween, the first conductive part is disposed in the space between the positive electrode and the first electrode, thereby achieving electrical connection between the positive electrode and the first electrode, and the second conductive part is disposed in the space between the negative electrode and the second electrode, thereby achieving electrical connection between the negative electrode and the second electrode, and further achieving electrical connection between the substrate and the light emitting device. Among the above-mentioned electronic equipment, need not to set up tin cream between luminescent device and base plate, just can realize the electricity of base plate and luminescent device and connect, avoided prior art, set up the problem that the luminescent device height that the tin cream leads to between base plate and luminescent device is uneven, guaranteed that electronic equipment's luminance and colourity are comparatively even better, guaranteed that electronic equipment's display effect is better.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (9)
1. A display panel, comprising:
a substrate;
a plurality of substrate electrode groups arranged in an array on the substrate, one of the substrate electrode groups including a positive electrode and a negative electrode;
a light emitting device, one of the light emitting devices being located on the substrate between the positive electrode and the negative electrode in one of the substrate electrode groups, the light emitting device including a body structure, a first electrode and a second electrode, the first electrode and the second electrode being respectively located at both sides of the body structure; and
a plurality of conductive parts including a first conductive part on the substrate between the positive electrode and the first electrode to electrically connect the positive electrode and the first electrode, and a second conductive part on the substrate between the negative electrode and the second electrode to electrically connect the negative electrode and the second electrode,
the display panel further includes:
a support structure on the substrate, the positive electrode and/or the negative electrode being on a sidewall of the support structure and in contact with the substrate.
2. The display panel of claim 1, wherein the material of the support structure comprises photoresist.
3. The display panel according to claim 1 or 2, wherein the light-emitting device comprises:
a substrate;
an N-type semiconductor layer on a portion of the surface of the substrate;
the active layer is positioned on the partial surface of the N-type semiconductor layer far away from the substrate;
the P-type semiconductor layer is positioned on the surface of the active layer, which is far away from the N-type semiconductor layer, and the substrate, the N-type semiconductor layer, the active layer and the P-type semiconductor layer form a preparation structure;
and the insulating layer is positioned on the surface and the side wall of the preparation structure, part of the surface and/or part of the side wall of the N-type semiconductor layer is not provided with the insulating layer, part of the surface and/or part of the side wall of the P-type semiconductor layer is not provided with the insulating layer, the first electrode is in contact with the surface and/or the side wall of the N-type semiconductor layer which is not provided with the insulating layer, and the second electrode is in contact with the surface and/or the side wall of the P-type semiconductor layer which is not provided with the insulating layer.
4. The display panel according to claim 3, wherein the insulating layer is not provided on a part of a surface of the N-type semiconductor layer, and wherein the insulating layer is not provided on a part of a sidewall of the P-type semiconductor layer.
5. The display panel according to claim 3, wherein the first electrode is further located on a surface of the insulating layer, and wherein the second electrode is further located on a surface of the insulating layer.
6. The display panel according to claim 4 or 5, wherein the light-emitting device further comprises:
and the electric field dispersion layer is positioned between the insulating layer and the P-type semiconductor layer, is used for homogenizing the electric field distribution of the light-emitting device, and is also positioned on the side wall of the electric field dispersion layer.
7. The display panel according to claim 6, wherein a material of the electric field dispersion layer comprises indium tin oxide.
8. The display panel according to any one of claims 1, 2, 4, 5, or 7, wherein a material of the conductive portion includes nano silver paste.
9. A method for manufacturing a display panel is characterized by comprising the following steps:
forming a substrate;
forming a plurality of substrate electrode groups arranged in an array on the substrate, wherein one substrate electrode group comprises a positive electrode and a negative electrode;
forming a light emitting device comprising a body structure, a first electrode and a second electrode, the first electrode and the second electrode being located on either side of the body structure;
transferring the light emitting device to the substrate between the positive electrode and the negative electrode in one of the substrate electrode sets;
disposing a conductive liquid between the negative electrode and the second electrode and between the positive electrode and the first electrode;
solidifying the conductive liquid to form a first conductive part and a second conductive part, wherein the first conductive part is electrically connected with the positive electrode and the first electrode, and the second conductive part is used for electrically connecting the negative electrode and the second electrode,
after forming the substrate, before forming a plurality of substrate electrode sets arranged in an array on the substrate, the method further comprises: a support structure is formed on the substrate,
the positive electrode and/or the negative electrode are located on a sidewall of the support structure and in contact with the substrate.
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| CN202011643510.2A CN112968030B (en) | 2020-12-30 | 2020-12-30 | Display panel and manufacturing method thereof |
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| EP1900043B1 (en) * | 2005-07-05 | 2016-02-17 | Showa Denko K.K. | Light-emitting diode and method for fabrication thereof |
| CN203456493U (en) * | 2013-08-21 | 2014-02-26 | 深圳市凯信光电有限公司 | LED wafer structure |
| CN105514254A (en) * | 2016-01-15 | 2016-04-20 | 中山芯达电子科技有限公司 | LED (Light-emitting Diode) chip packaging structure |
| CN205564813U (en) * | 2016-03-14 | 2016-09-07 | 京东方光科技有限公司 | Emitting diode device and display device |
| CN211265475U (en) * | 2020-02-20 | 2020-08-14 | 重庆康佳光电技术研究院有限公司 | LED display light-emitting unit |
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