CN112925171A - Patterned electronic light source based on anodic aluminum oxide template and manufacturing method thereof - Google Patents

Patterned electronic light source based on anodic aluminum oxide template and manufacturing method thereof Download PDF

Info

Publication number
CN112925171A
CN112925171A CN202110077236.5A CN202110077236A CN112925171A CN 112925171 A CN112925171 A CN 112925171A CN 202110077236 A CN202110077236 A CN 202110077236A CN 112925171 A CN112925171 A CN 112925171A
Authority
CN
China
Prior art keywords
light source
template
electrode layer
electron
nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110077236.5A
Other languages
Chinese (zh)
Inventor
曹雪丽
文剑锋
唐涛
李明
李新宇
余静
崔丽丹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guilin University of Technology
Original Assignee
Guilin University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guilin University of Technology filed Critical Guilin University of Technology
Priority to CN202110077236.5A priority Critical patent/CN112925171A/en
Publication of CN112925171A publication Critical patent/CN112925171A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/04Anodisation of aluminium or alloys based thereon
    • C25D11/045Anodisation of aluminium or alloys based thereon for forming AAO templates
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/04Anodisation of aluminium or alloys based thereon
    • C25D11/12Anodising more than once, e.g. in different baths
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2051Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source

Abstract

The invention discloses a patterned electronic light source based on an anodized aluminum template and a manufacturing method thereof, wherein the electronic light source comprises an electronic emitter and a light projection illumination system. The invention takes an anodic aluminum oxide template as a base, an external photoelectric effect material is filled in a nanometer hole of the anodic aluminum oxide template to be used as a photoelectron emission nanometer electrode array, and the local nanometer electrode is controlled to emit electrons by irradiating the nanometer electrode array through light projection; the nano-photoelectrode that is illuminated by light will emit electrons, while the nano-photoelectrode that is not illuminated by light will not emit electrons; therefore, the shape of the electron beam emitted by the electron light source can be changed according to the preset pattern, and the electron beam can be emitted in a large area. The electron beam emitted by the electron light source does not need a mask plate, and can form a reduced electron light source image after passing through components such as an acceleration component, a diaphragm component, a magnetic lens component and the like, and the reduced electron light source image is projected on a target substrate. The invention can conveniently and rapidly edit the final electronic projected pattern, namely the electronic photoetching pattern, by changing the light projected pattern.

Description

Patterned electronic light source based on anodic aluminum oxide template and manufacturing method thereof
Technical Field
The invention relates to the technical field of electronics, in particular to a patterned electronic light source based on an anodic aluminum oxide template and a manufacturing method thereof.
Background
Photolithography systems play a crucial role in the fabrication process of semiconductor integrated circuits. With the higher integration level and the smaller size of the components, the requirement on the resolution of the lithography system is higher. By utilizing the fluctuation of electrons, the electron beam lithography using electrons as an illumination light source can theoretically obtain extremely high resolution. For example, 20kV accelerated electrons can obtain a wavelength of 0.0086 nm.
Electron beam lithography is classified into direct-write electron beam lithography and projection electron beam lithography. Direct-write e-beam lithography works on a principle similar to a scanning electron microscope, and is exposed by controlling an electron beam to scan over a target substrate. The resolution is high, a mask plate is not needed, and the scanning working mode is low in productivity and far from meeting the requirement. The working principle of projection electron beam lithography is similar to that of photo-lithography, and large-scale simultaneous exposure can be realized, so that the productivity is greatly improved, but the mask plate is high in cost, and the development and application of the mask plate are limited by the problems of proximity effect, space charge effect and the like.
The electronic light source of the invention takes the photoelectric material nano electrode array deposited in the anodic aluminum oxide template as an electronic emitter, and the nano photoelectric electrode array emitter is irradiated by light projection so as to control the emitter to emit locally according to a preset pattern, thereby achieving the purpose of patterning the electronic light source. The emitted electron beam does not need a mask plate, and can form a reduced electron light source image after passing through components such as an accelerating component, a diaphragm and a magnetic lens, and the reduced electron light source image is projected on a target substrate.
Disclosure of Invention
The invention aims to provide a patterned electronic light source based on an anodic aluminum oxide template and a manufacturing method thereof.
In order to achieve the purpose, the invention provides the following technical scheme:
an anodized aluminum template-based patterned electron light source comprising:
the electron emitter comprises an emission electrode layer and a base electrode layer, wherein the emission electrode layer comprises a porous anodic alumina template, a photoelectric material grows or deposits in nano holes of the porous anodic alumina template, the photoelectric material is an external photoelectric effect material, and the base electrode layer comprises a metal conducting layer formed on the back surface of the emission electrode layer;
and the light projection irradiation system is used for projecting and irradiating the edited pattern onto the electron emitter so that the electron emitter locally emits an electron beam containing preset pattern information according to the projection of the preset pattern.
As a further scheme of the invention: the light projection and illumination system is a projection system of common photolithography.
As a further scheme of the invention: the light projection and irradiation system comprises a common mask plate and an optical lens, so that the common mask plate and the optical lens are utilized to finish the editing and projection of the pattern.
As a further scheme of the invention: the nano holes of the porous anodic alumina template are used for growing or depositing the photoelectric material in the nano holes of the alumina template by a hydrothermal method or an electrochemical deposition method.
As a further scheme of the invention: the external photoelectric effect material is Zn or Pt.
The method for manufacturing the patterned electron light source based on the anodized aluminum template, wherein the light projection and irradiation system is a projection system of common photolithography, and the method for manufacturing the electron emitter comprises the following steps:
s1: preparing an emitting electrode layer;
s11: synthesizing an anodic aluminum oxide template: a secondary anodic oxidation method is adopted to obtain a hole structure with more regular shape and arrangement;
s12: filling an external photoelectric effect material in the nano holes of the anodic aluminum oxide template to form an emitting electrode layer with a nano photoelectrode array;
s2: forming a base electrode layer: and forming a metal conductive layer on the back surface of the emission electrode layer to serve as a base electrode layer.
As a further scheme of the invention: the method for manufacturing the anodized aluminum template of step S11 includes the following steps:
s111: preparing a high-purity aluminum sheet, and carrying out pretreatment such as mechanical flattening, annealing, cleaning, polishing and the like;
s112: and (3) carrying out primary anodic oxidation on the treated high-purity aluminum sheet, removing an oxide layer, and carrying out secondary anodic oxidation to obtain the porous anodic alumina template with the holes arranged in order.
As a further scheme of the invention: the diameter of the holes is 2-90 nanometers.
As a further scheme of the invention: the step S12 specifically includes:
and filling an external photoelectric effect material in the nano holes by using a hydrothermal method or an electrochemical deposition method to form an emitting electrode layer of the vertical nano electrode array.
As a further scheme of the invention: the step S2 specifically includes:
removing aluminum on the back surface of the anodic aluminum oxide template, plating a layer of metal conductive material on the back surface by using methods such as magnetron sputtering, evaporation or spin coating, and the like, and forming a base electrode layer.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a patterned electronic light source based on an anodic aluminum oxide template, wherein the electronic light source is based on the anodic aluminum oxide template, an external photoelectric effect material is filled in a nano hole of the electronic light source to serve as a photoelectron emission nano electrode array, and the local nano electrode emission electrons are controlled by irradiating the nano electrode array through light projection; the nano-photoelectrode that is illuminated by light will emit electrons, while the nano-photoelectrode that is not illuminated by light will not emit electrons; therefore, the shape of the electron beam emitted by the electron light source can be changed according to the preset pattern, and the electron beam can be emitted in a large area. The electron beam emitted by the electron light source does not need a mask plate, and can form a reduced electron light source image after passing through components such as an acceleration component, a diaphragm component, a magnetic lens component and the like, and the reduced electron light source image is projected on a target substrate. The invention can conveniently and rapidly edit the final electronic projected pattern, namely the electronic photoetching pattern, by changing the light projected pattern.
Drawings
FIG. 1 is a cross-sectional view of an electron light source according to embodiment 1 of the present invention;
FIGS. 2a-d are simplified schematic diagrams of a method of fabricating an electron emitter according to an embodiment of the invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without inventive effort based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1, in an embodiment of the invention, an anodized aluminum template-based patterned electron light source includes an electron emitter and a light projection illumination system; the light projection and illumination system is responsible for editing the preset pattern and projecting and illuminating the edited pattern onto the electronic emitter. The electron emitter emits electrons locally according to the projection of the preset pattern to form an electron beam containing the preset pattern information.
The electron emitter comprises an emitting electrode layer and a base electrode layer, wherein the emitting electrode layer comprises a porous anodic aluminum oxide template, a photoelectric material grows or deposits in nano holes of the porous anodic aluminum oxide template, the photoelectric material is an external photoelectric effect material, and the base electrode layer comprises a metal conducting layer formed on the back of the emitting electrode layer. The anode alumina template is used as a field emission cathode, and has the advantages of low starting voltage, simple method and process, easy realization of large-area emission, uniform emission and the like.
When the filled photoelectric material is an external photoelectric effect material, the base electrode layer on the back can adopt a metal conductive layer, a light beam with a preset pattern irradiates an electron light source from the front side of the emitting electrode layer, the irradiated nano electrode array emits electrons, and the non-irradiated nano electrode array does not emit electrons.
In the present embodiment, the light projection and illumination system is a projection system of general photolithography; the light projection and irradiation system comprises a common mask plate and an optical lens, so that the common mask plate and the optical lens are utilized to finish the editing and projection of the pattern.
In this embodiment, the nano-pores of the porous anodic alumina template are subjected to a hydrothermal method or an electrochemical deposition method to grow or deposit a photoelectric material in the nano-pores of the alumina template; the external photoelectric effect material is Zn or Pt.
The method for manufacturing the patterned electron light source based on the anodized aluminum template, wherein the light projection and irradiation system is a projection system of common photolithography, and the method for manufacturing the electron emitter comprises the following steps:
(1) preparing an emitting electrode layer;
(11) synthesizing an anodic aluminum oxide template: a secondary anodic oxidation method is adopted to obtain a hole structure with more regular shape and arrangement;
(12) filling an external photoelectric effect material in the nano holes of the anodic aluminum oxide template to form an emitting electrode layer with a nano photoelectrode array;
(2) forming a base electrode layer: and forming a metal conductive layer on the back surface of the emission electrode layer to serve as a base electrode layer.
The specific embodiment is as follows:
a patterned electronic light source based on an anodized aluminum template comprises an electron emitter and a light projection and illumination system. The light projection and illumination system adopts a projection system of common photo-lithography. A cross-sectional view of the electron emitter is shown in fig. 1. The transmitter comprises two parts: the base electrode layer is a conductive metal layer, and can be selected from gold, copper, aluminum and the like; and the black part of the emission electrode layer is a nano electrode array for depositing an external photoelectric effect material, and the white part of the emission electrode layer is an alumina template framework.
When the light projection irradiation system projects a preset pattern on the surface of the electron emitter, because the emitter contains the nano electrode array of the external photoelectric effect material, the irradiated nano electrode can emit photoelectrons, and the non-irradiated nano electrode can not emit electrons, so that the aim of emitting electron beams according to the preset pattern is fulfilled. The emitted photoelectrons can be compensated by switching on the power supply through the base electrode. The density of emitted photoelectrons can be controlled by the density of the nanoelectrodes and the intensity of the illumination.
The method for manufacturing the patterned electron light source based on the anodized aluminum template is only described here as the method for manufacturing the electron emitter, since the light projection and illumination system uses the projection system of the conventional photolithography, and the specific steps are shown in fig. 2 a-d.
(1) Referring to fig. 2a, a piece of high purity aluminum sheet is prepared and is subjected to pretreatment such as mechanical flattening, annealing, cleaning, polishing, etc.
(2) And (3) carrying out primary anodic oxidation on the treated high-purity aluminum sheet, removing an oxide layer, and carrying out secondary anodic oxidation to obtain a porous anodic alumina template with regularly arranged holes, as shown in figure 2 b. The diameter of the holes and the distance between the holes are not too large and should be controlled within the range of several nanometers to dozens of nanometers.
(3) After the hole expansion treatment, the outer photoelectric effect material is filled in the nano holes by using methods such as a hydrothermal method or electrochemical deposition method, and the like, so as to form a vertical nano electrode array, as shown in fig. 2 c.
(4) Removing the aluminum on the back surface, plating a layer of metal conductive material on the back surface by magnetron sputtering, evaporation or spin coating, etc., and forming a base electrode layer, as shown in fig. 2 d.
The invention provides a patterned electronic light source based on an anodic aluminum oxide template, wherein the electronic light source is based on the anodic aluminum oxide template, an external photoelectric effect material is filled in a nano hole of the electronic light source to serve as a photoelectron emission nano electrode array, and the local nano electrode emission electrons are controlled by irradiating the nano electrode array through light projection; the nano-photoelectrode that is illuminated by light will emit electrons, while the nano-photoelectrode that is not illuminated by light will not emit electrons; therefore, the shape of the electron beam emitted by the electron light source can be changed according to the preset pattern, and the electron beam can be emitted in a large area. The electron beam emitted by the electron light source does not need a mask plate, and can form a reduced electron light source image after passing through components such as an acceleration component, a diaphragm component, a magnetic lens component and the like, and the reduced electron light source image is projected on a target substrate. The invention can conveniently and rapidly edit the final electronic projected pattern, namely the electronic photoetching pattern, by changing the light projected pattern.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention are equivalent to or changed within the technical scope of the present invention.

Claims (10)

1. An anodized aluminum template-based patterned electronic light source, comprising:
the electron emitter comprises an emission electrode layer and a base electrode layer, wherein the emission electrode layer comprises a porous anodic alumina template, a photoelectric material grows or deposits in nano holes of the porous anodic alumina template, the photoelectric material is an external photoelectric effect material, and the base electrode layer comprises a metal conducting layer formed on the back surface of the emission electrode layer;
and the light projection irradiation system is used for projecting and irradiating the edited pattern onto the electron emitter so that the electron emitter locally emits an electron beam containing preset pattern information according to the projection of the preset pattern.
2. The anodized aluminum template-based patterned electronic light source of claim 1, wherein the light projection illumination system is a projection system for general photolithography.
3. The anodized aluminum template-based patterned electronic light source of claim 1, wherein the light projection and illumination system comprises a common mask plate and an optical lens, so that the pattern editing and projection can be completed by using the common mask plate and the optical lens.
4. The patterned anodized aluminum template-based electronic light source of claim 1, wherein the nanopores of the porous anodized aluminum template are used to grow or deposit a photovoltaic material in the nanopores of the aluminum template by hydrothermal or electrochemical deposition.
5. The anodized aluminum template-based patterned electron light source of claim 1, wherein the external photoelectric effect material is Zn or Pt.
6. The method according to any one of claims 1 to 5, wherein the light projection system is a general photolithography projection system, and the method for manufacturing the electron emitter comprises the following steps:
s1: preparing an emitting electrode layer;
s11: synthesizing an anodic aluminum oxide template: a secondary anodic oxidation method is adopted to obtain a hole structure with more regular shape and arrangement;
s12: filling an external photoelectric effect material in the nano holes of the anodic aluminum oxide template to form an emitting electrode layer with a nano photoelectrode array;
s2: forming a base electrode layer: and forming a metal conductive layer on the back surface of the emission electrode layer to serve as a base electrode layer.
7. The method as claimed in claim 6, wherein the step S11 comprises the following steps:
s111: preparing a high-purity aluminum sheet, and carrying out pretreatment such as mechanical flattening, annealing, cleaning, polishing and the like;
s112: and (3) carrying out primary anodic oxidation on the treated high-purity aluminum sheet, removing an oxide layer, and carrying out secondary anodic oxidation to obtain the porous anodic alumina template with the holes arranged in order.
8. The method of claim 7, wherein the diameter of the holes is between 2 nm and 90 nm.
9. The method as claimed in claim 6, wherein the step S12 is specifically as follows:
and filling an external photoelectric effect material in the nano holes by using a hydrothermal method or an electrochemical deposition method to form an emitting electrode layer of the vertical nano electrode array.
10. The method as claimed in claim 6, wherein the step S2 is specifically as follows:
removing aluminum on the back surface of the anodic aluminum oxide template, plating a layer of metal conductive material on the back surface by using methods such as magnetron sputtering, evaporation or spin coating, and the like, and forming a base electrode layer.
CN202110077236.5A 2021-01-20 2021-01-20 Patterned electronic light source based on anodic aluminum oxide template and manufacturing method thereof Pending CN112925171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110077236.5A CN112925171A (en) 2021-01-20 2021-01-20 Patterned electronic light source based on anodic aluminum oxide template and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110077236.5A CN112925171A (en) 2021-01-20 2021-01-20 Patterned electronic light source based on anodic aluminum oxide template and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN112925171A true CN112925171A (en) 2021-06-08

Family

ID=76165092

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110077236.5A Pending CN112925171A (en) 2021-01-20 2021-01-20 Patterned electronic light source based on anodic aluminum oxide template and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN112925171A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118952A (en) * 1986-08-18 1992-06-02 Fujitsu Limited Patterned photo cathode and its fabrication method for electron image projection
CN1469200A (en) * 2002-07-15 2004-01-21 ���ǵ�����ʽ���� Electronic photoetching equipment with pattern emitter
CN102262989A (en) * 2011-06-27 2011-11-30 福州大学 Method for manufacturing anodic aluminum oxide template and method for manufacturing field emission cathode array material by using template
CN108048882A (en) * 2017-12-07 2018-05-18 天津大学 A kind of method that graphical cobalt nanowire array is prepared based on anodic oxidation aluminium formwork method
CN109887816A (en) * 2019-02-22 2019-06-14 福建工程学院 A kind of reflective field emission electron light source device and preparation method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118952A (en) * 1986-08-18 1992-06-02 Fujitsu Limited Patterned photo cathode and its fabrication method for electron image projection
CN1469200A (en) * 2002-07-15 2004-01-21 ���ǵ�����ʽ���� Electronic photoetching equipment with pattern emitter
CN102262989A (en) * 2011-06-27 2011-11-30 福州大学 Method for manufacturing anodic aluminum oxide template and method for manufacturing field emission cathode array material by using template
CN108048882A (en) * 2017-12-07 2018-05-18 天津大学 A kind of method that graphical cobalt nanowire array is prepared based on anodic oxidation aluminium formwork method
CN109887816A (en) * 2019-02-22 2019-06-14 福建工程学院 A kind of reflective field emission electron light source device and preparation method

Similar Documents

Publication Publication Date Title
KR100421218B1 (en) Apparatus of electron emission lithography by using selectively grown carbon nanotube and lithography method thereof
EP0992053B1 (en) Gated photocathode for controlled single and multiple electron beam emission
CN111900269A (en) Quantum dot layer patterning method and quantum dot light-emitting device manufacturing method
US20080169436A1 (en) Electron beam lithography method and apparatus using a dynamically controlled photocathode
US7538015B2 (en) Method of manufacturing micro structure, and method of manufacturing mold material
US6232040B1 (en) Method of electron beam exposure utilizing emitter with conductive mesh grid
US7594841B2 (en) Carbon nanotube field emitter array and method for fabricating the same
KR20120077596A (en) Method of manufacturing light emitting diode using zinc oxide nano-rods as a mask
US4371806A (en) Luminescent screen with grid structure for X-ray image intensifier
CN112925171A (en) Patterned electronic light source based on anodic aluminum oxide template and manufacturing method thereof
CN112921380B (en) Patterned electronic light source device based on anodic aluminum oxide template and manufacturing method thereof
CN112882351A (en) Patterned emitter for electron beam projection lithography system and method of making the same
CN101133365A (en) Exposure method, method for forming irregular pattern, and method for manufacturing optical element
JP3357874B2 (en) Electron beam writing apparatus and electron beam writing method
KR100792385B1 (en) Nanotip for electron radiation, method for manufacturing the same and nanotip lithography with the same
CN112485979A (en) Multi-beam control multi-electron beam lithography equipment and lithography method
JP2890946B2 (en) Processing method using in-situ formed mask
CN114512379B (en) Nano-gap electron source structure and preparation method thereof
RU2183040C1 (en) Electron-beam projection lithographer
CN1661753A (en) Method for forming totem of Nano carbon tubes
CN112947008B (en) Electron beam lithography machine
JPH062167A (en) Production of metallic body having fine pore and production of light emitting body for lamp
CN118028968A (en) Method for depositing periodic lattice of monocrystalline silicon by laser-induced non-optical lithography
JPH08190883A (en) Electron beam exposing device
JPH0697054A (en) Electron beam lithography apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20210608