CN112924840A - Light-emitting diode failure positioning method - Google Patents
Light-emitting diode failure positioning method Download PDFInfo
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- CN112924840A CN112924840A CN202110216537.1A CN202110216537A CN112924840A CN 112924840 A CN112924840 A CN 112924840A CN 202110216537 A CN202110216537 A CN 202110216537A CN 112924840 A CN112924840 A CN 112924840A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
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Abstract
The utility model provides a light emitting diode failure positioning method, wherein, light emitting diode has the plastic envelope structure, and the method includes: electrical property testing electrical parameters of the failed light-emitting diode, and judging whether the connection fails according to the electrical parameters; if yes, determining whether the package and the external pin are normal; if yes, ray testing is carried out to determine whether the internal pin and the chip are normal; if yes, ray testing is carried out to determine whether the bonding wire is internally broken; and if so, thinning the plastic package structure and determining the position of the internal fracture of the bonding wire. The plastic packaging structure is used for the light emitting diodes with various plastic packaging structures. The failure point is gradually positioned by combining physical testing, mechanical grinding and chemical unsealing. For the wrapping of organic matters around, the fracture crack gap is very small, and the LED in the on-off state can completely keep the form of the bonding wire and accurately analyze the internal breakpoint of the bonding wire. The cause of the fracture of the necking part of the bonding point, which usually occurs when the connection of the bonding wire fails, can be simply and efficiently analyzed.
Description
Technical Field
The disclosure relates to the technical field of measurement, in particular to a method for positioning failure of a light-emitting diode.
Background
Light Emitting Diodes (LEDs) are widely used in industrial fields due to their low power consumption, long life, small size and high reliability. The spectrum of the LED is expanded from the initial red light to the green light and the blue light to form a complete three-primary-color light emitting system, and the white light LED is realized.
In the practical application process, in the failure of the light-emitting diode, the proportion of the bonding wire connection failure is large, especially in products with high reliability requirements. However, when the bonding wire fails, a failure point is difficult to find, and failure analysis work cannot be continuously carried out.
Therefore, a new method for locating the failure of the led is needed.
Disclosure of Invention
In view of the above, an object of the present disclosure is to provide a method for locating a failure of a light emitting diode.
Based on the above purpose, the present disclosure provides a method for locating a failure of a light emitting diode, wherein the light emitting diode has a plastic package structure, and the method includes:
electrical property testing electrical parameters of the failed light-emitting diode, and judging whether the connection fails according to the electrical parameters;
if yes, determining whether the package and the external pin are normal;
if yes, ray testing is carried out to determine whether the internal pin and the chip are normal;
if yes, ray testing is carried out to determine whether the bonding wire is internally broken;
and if so, thinning the plastic package structure and determining the position of the internal fracture of the bonding wire.
In some embodiments, further comprising: and removing the residual plastic package structure, exposing the bonding wire, analyzing the picture of the bonding wire fracture opening, and determining the reason of the bonding wire fracture.
In some embodiments, analyzing the microscope picture of the bond wire fracture interface to determine the cause of the bond wire fracture specifically includes:
analyzing the form of the bonding wire fracture in the picture;
if at least one of microcracks, damages or small bonding area exists at the bonding wire fracture opening, judging that the reason of the bonding wire fracture is a production factor;
if the bonding wire fracture opening has the characteristics of fatigue fracture or tensile fracture, the bonding wire fracture reason is judged to be a use factor.
In some embodiments, the removing of the residual plastic package structure and the exposing of the bonding wire specifically include:
and (3) corroding the residual plastic package structure by concentrated sulfuric acid dropwise until the necking part of the bonding point is exposed.
In some embodiments, the radiation testing to determine whether the bond wire internal fracture specifically includes:
and analyzing the ray picture of the light-emitting diode, and determining whether the bonding wire is internally broken according to whether the outside of the bonding wire is broken.
In some embodiments, the determining whether the bond wire is an internal break comprises:
and determining whether a suspected breakpoint exists in the bonding wire.
In some embodiments, the electrical parameters include: forward current and forward voltage; the electrical parameters of the failed light-emitting diode in the electrical property test specifically include:
a predetermined forward voltage or current is applied between the positive electrode pin and the negative electrode pin of the failed light emitting diode, and the presence or absence of a forward current value or a forward voltage value is detected.
In some embodiments, the determining whether the connection fails according to the electrical parameter specifically includes:
judging whether the anode and the cathode of the light-emitting diode are in an open circuit state or an on-off state according to the forward current value and the forward voltage value;
if yes, the connection fails.
In some embodiments, the ray test specifically determines whether the internal pins and the chip are normal, including:
and analyzing the ray picture of the light-emitting diode, determining whether the internal pin is deformed or broken, and determining whether the bonding position of the chip is normal.
In some embodiments, the thinning plastic package structure specifically includes: and the plastic package structure is gradually thinned by a grinding method until the inside of the bonding wire can be identified.
As can be seen from the above, the method for locating the failure of the light emitting diode provided by the present disclosure, wherein the light emitting diode has a plastic package structure, and the method comprises the following steps: electrical property testing electrical parameters of the failed light-emitting diode, and judging whether the connection fails according to the electrical parameters; if yes, determining whether the package and the external pin are normal; if yes, ray testing is carried out to determine whether the internal pin and the chip are normal; if yes, ray test is carried out to determine whether the bonding wire is internally broken. The method can be used for the light-emitting diodes with various plastic package structures. Has the advantages of strong pertinence, simple operation and the like. Aiming at the structural characteristics of the light-emitting diode and the problem of bonding wire connection failure, failure points are gradually positioned by combining physical testing, mechanical grinding and chemical unsealing. For the wrapping of organic matters around, the fracture crack gap is very small, and the LED in the on-off state can completely keep the form of the bonding wire and accurately analyze the internal breakpoint of the bonding wire. The neck down or bond point of a bond point where bond wire connection failure typically occurs can be analyzed simply and efficiently.
Drawings
In order to more clearly illustrate the technical solutions in the present disclosure or related technologies, the drawings needed to be used in the description of the embodiments or related technologies are briefly introduced below, and it is obvious that the drawings in the following description are only embodiments of the present disclosure, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for locating a failure of a light emitting diode according to an embodiment of the present disclosure;
FIG. 2 is a schematic view of the microscope under the appearance of a failed LED according to an embodiment of the present disclosure;
FIG. 3 is a ray diagram of a failed LED according to an embodiment of the present disclosure;
FIG. 4 is an external ray view of a suspected breakpoint of a failed LED according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram of a ground topography of a negative electrode of a failed LED according to an embodiment of the present disclosure;
fig. 6 is a fracture morphology schematic diagram of a bonding wire of a failed light emitting diode according to an embodiment of the present disclosure.
Detailed Description
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
It is to be noted that technical terms or scientific terms used in the embodiments of the present disclosure should have a general meaning as understood by those having ordinary skill in the art to which the present disclosure belongs, unless otherwise defined. The use of the terms "comprising" or "including" and the like in the embodiments of the present disclosure is intended to mean that the elements or items listed before the term cover the elements or items listed after the term and their equivalents, without excluding other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
In practical applications, from the viewpoint of LED structure, transparent resin is generally used for filling, the chip in the device is sealed in a package, and the package mainly performs the functions of electrical interconnection, chip protection and visible light output. The inner square chip is bonded or sintered at the center of the lead frame reflector cup, and the lead is bonded to connect the chip and the lead frame.
The chip of the LED generally has two structures: one is a different side electrode chip, such as a GaAs chip emitting red light and yellow light, for an LED of the different side electrode chip, a front electrode is connected to a device pin through a bonding wire, and a back electrode is connected to a base pin through silver paste (or conductive paste); the other is a chip with electrodes at the same side, such as a GaN chip emitting blue light and green light, and PN electrodes of the chip with electrodes at the same side are connected with pins of the device through bonding wires. Therefore, the connection quality of the bonding wire inside the LED plays a key role in electrical interconnection.
The LED packaging structure is characterized in that the LED packaging structure is made of a non-metal organic matter filling material, the bonding wire is made of a metal material with the diameter of tens of microns and is integrally wrapped by the non-metal organic matter, the thermal expansion coefficients of the bonding wire and the non-metal organic matter are greatly different, and after the LED is subjected to temperature stress change in the using process, the bonding wire is subjected to repeated tensile stress at the connecting position of the LED packaging structure and the chip due to the difference of the thermal expansion coefficients, cracks are gradually generated, and the LED is connected and. In order to solve the problem that the bonding wire connection failure fault point is difficult to confirm, the invention aims to accurately position the bonding wire fault point by adopting a scientific and reasonable positioning mode.
Referring to fig. 1, an embodiment of the present disclosure provides a method for locating a failure of a light emitting diode, where the light emitting diode has a plastic package structure, and the method includes:
s100, testing the electrical property of the failed light-emitting diode, and judging whether the connection fails according to the electrical parameter;
s200, if yes, determining whether the package and the external pin are normal;
s300, if yes, ray testing is carried out to determine whether the internal pin and the chip are normal or not;
s400, if yes, ray testing is carried out to determine whether the bonding wire is broken;
s500, if not, thinning the plastic package structure, and determining the fracture position of the bonding wire.
In some embodiments, the plastic encapsulation structure may be of various types, including: COB integrated package, LED wafer level package, COF integrated package, LED modular integrated package, flip chip package, EMC package, COG package, and QFN package. The packaging material can be epoxy resin, epoxy plastic packaging material, silica gel, organic silicon plastic and the like.
In step S100, the electrical parameters include: a forward current and a forward voltage. The electrical parameters of the failed light-emitting diode in the electrical property test specifically include:
a predetermined forward voltage or current is applied between two pins of the failed light emitting diode, and the presence of a forward current value or a forward voltage value is detected.
The specific specified forward voltage or current may be determined based on the specific type of failed led, such as by the product specification of the failed led, etc. . The judging whether the connection fails according to the electrical parameters specifically comprises:
judging whether the anode and the cathode of the light-emitting diode are in an open circuit state or an on-off state according to the forward current value and the forward voltage value;
if yes, the connection fails.
Judging whether the anode and the cathode of the light emitting diode are in an open circuit state or an on-off state according to the forward current value and the forward voltage value specifically comprises the following steps:
if the forward current value or the forward voltage value is not detected, the two poles are in a complete open circuit state;
if the forward current value or the forward voltage value is detected to be intermittently present, the two electrodes are in an incomplete open state.
In some embodiments, the step S200 of determining whether the package and the external pin are normal may specifically include: whether the package and the pins are normal is determined by analyzing the appearance state of the LED. Analyzing the appearance of the LED can be done by observing and analyzing the appearance of the sample under a microscope. Specifically, a stereo microscope can be used for observing the external macroscopic features of the device under the condition of amplifying by 10 times to 100 times; and (3) observing the external microscopic features of the device by using a metallographic microscope under the condition of magnifying by 50-1000 times. For example, determining whether the encapsulant is intact; whether the pins are complete, etc.
In some embodiments, in step S300, the ray test to determine whether the internal pins and the chip are normal specifically includes: and analyzing the ray picture of the light-emitting diode, determining whether the internal pin is deformed or broken, and determining whether the bonding position of the chip is normal. The ray pictures of the light emitting diode can include a picture of the front angle and a picture of the side angle of the light emitting diode.
In some embodiments, the step S400 of determining whether the bonding wire is an internal fracture by the ray test specifically includes: and analyzing the ray picture of the light-emitting diode, and determining whether the bonding wire is internally broken according to whether the outside of the bonding wire is broken. That is, when the external form of the bonding wire is normal and there is no fracture, it is determined that the bonding wire is internally fractured. The exterior configuration includes an exterior configuration of a body of the bond wire and an exterior configuration of a necked down position of the bond wire. The external form of the necked location of the bonding wire may comprise the necked location of the bonding wire at a first bonding point of the negative electrode; and a necked-down position at the second bonding point of the positive electrode. And when the external form of the body and the external form of the necking position of the bonding wire are both normal, judging that no fracture exists outside the bonding wire and the inside of the bonding wire is fractured.
In some embodiments, step S400 may further include: and analyzing the ray picture of the light-emitting diode, and determining whether a suspected breakpoint exists in the bonding wire according to whether the ray picture of the light-emitting diode has a light-transmitting point.
In some embodiments, in step S500, the plastic package structure may be gradually thinned until the form of the internal bonding wire can be identified. In particular, it can be carried out by a milling method. The packaging material is gradually thinned by a grinding method, so that the plastic packaging structure is gradually thinned, and the outer surface of the plastic packaging structure can be close to the bonding wire as much as possible without damaging the form of the bonding wire. When the encapsulating material is thin to a predetermined degree, that is, the form of the internal bonding wire can be observed through an optical microscope.
Specifically, the stepwise thinning may be each time a predetermined thickness is thinned, for example, each time the thinning is not more than 0.2 mm. The packaging structure for thinning the thickness at every time can avoid the damage to the internal form of the bonding wire caused by too thick thinning, and can avoid too many thinning times caused by too thin thinning, so that the thinning efficiency is highest. Neither too cumbersome thinning nor too poor thinning effect.
In some embodiments, the method further comprises removing the residual plastic package structure, exposing the bonding wire, analyzing the picture of the bonding wire fracture opening, and determining the reason for the bonding wire fracture.
In some embodiments, analyzing the microscope picture of the bond wire fracture interface to determine the cause of the bond wire fracture specifically includes:
analyzing the form of the bonding wire fracture in the picture;
if at least one of microcracks, damages, thinner thickness or smaller combination area exists at the fracture opening of the bonding wire, the reason that the bonding wire is broken is judged to be a production factor;
if the bonding wire fracture opening has the characteristics of fatigue fracture or tensile fracture, the bonding wire fracture reason is judged to be a use factor.
The fatigue fracture is characterized in that the accumulated damage fracture surface is smooth and has no obvious plastic deformation; the stretch breaking may be characterized by a rough stretch breaking surface, presence of plastic deformation, and the like.
It should be noted that the bond wire breakage is mostly a necking portion of the bond wire. When the necking portion of the first bonding point or the second bonding point is observed to have microcracks, damages, a small thickness, a small bonding area, or the like, the bonding is caused by production factors. Production factors, which are understood here to be early defects in the bonding process, are production-related. This is due to the use factor when the neck-down at the bond point is observed to be a normal fatigue or tensile fracture characteristic. The use factor is understood to be related to the environmental stress during actual use.
In some embodiments, the removing of the residual plastic package structure and the exposing of the bonding wire specifically include:
and (3) corroding the residual plastic package structure by concentrated sulfuric acid dropwise until the necking part of the bonding point is exposed. Specifically, for the light emitting diode with the residual plastic package structure, concentrated sulfuric acid is adopted for dropwise corrosion of the residual plastic package structure, after the necking part of the bonding point is exposed visually, the corrosion is stopped in an application scene, and a chemical unsealing method can be adopted for removing the residual package structure. For different LED chips, the corresponding chemical agent is selected according to the specific packaging material and bonding wire material. The chemical reagent should avoid obvious corrosion to the bonding wire.
The method for locating the failure of the light emitting diode according to the present disclosure is further described in detail with reference to the following embodiments.
Examples
The device used in the embodiment of the disclosure is a plastic package diode, and the device is determined to be in an unstable connection state when being switched on and switched off between two poles through an electrical property test. Appearance inspection shows that the device packaging material and the external pin leading-out terminal are complete and have no obvious abnormality, and the appearance is as shown in figure 2. Analyzing the necking position 610 of the first bonding point on the surface of the diode chip and the external form of the bonding wire body by using a ray picture, wherein the necking position 620 of the second bonding point on the anode and the pin are not in bonding separation, as shown in fig. 3; but a suspected break 630 is present inside the necked region of the bonding wire as shown in fig. 4. The shape of the ray is observed after chemical unsealing, the diode bonding wire is separated from the bonding point at the necking part of the second bonding point, the necking part is flat, and the shape is shown in fig. 5, wherein the cathode pin 640 and the diode chip 650 are shown. The failure of the led thus localized is due to the bond wire breaking in the neck-down region of the second bond site. The picture of the bond wire fracture is shown in fig. 6, and by analyzing the picture, the bond wire fracture has the characteristic of fatigue fracture, that is, the bond wire at the necking part is flat, and the fracture part is thinnest. Therefore, it is judged that the cause of breakage of the bonding wire breakage port is a factor of use, that is, a crack is generated by external environmental stress during use and propagates to the breakage.
The method for positioning the failure of the light emitting diode can be used for the light emitting diodes with various plastic package structures. Has the advantages of strong pertinence, simple operation and the like. Aiming at the structural characteristics of the light-emitting diode and the problem of bonding wire connection failure, failure points are gradually positioned by combining physical testing, mechanical grinding and chemical unsealing. For the wrapping of organic matters around, the fracture crack gap is very small, and the LED in the on-off state can completely keep the form of the bonding wire and accurately analyze the internal breakpoint of the bonding wire. The neck down of the bond site where bond wire connection failure typically occurs can be analyzed simply and efficiently.
It should be noted that the above describes some embodiments of the disclosure. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments described above and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing may also be possible or may be advantageous.
Those of ordinary skill in the art will understand that: the discussion of any embodiment above is meant to be exemplary only, and is not intended to intimate that the scope of the disclosure, including the claims, is limited to these examples; within the idea of the present disclosure, also technical features in the above embodiments or in different embodiments may be combined, steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present disclosure as described above, which are not provided in detail for the sake of brevity.
In addition, well-known power/ground connections to Integrated Circuit (IC) chips and other components may or may not be shown in the provided figures for simplicity of illustration and discussion, and so as not to obscure the embodiments of the disclosure. Furthermore, devices may be shown in block diagram form in order to avoid obscuring embodiments of the present disclosure, and this also takes into account the fact that specifics with respect to implementation of such block diagram devices are highly dependent upon the platform within which the embodiments of the present disclosure are to be implemented (i.e., specifics should be well within purview of one skilled in the art). Where specific details (e.g., circuits) are set forth in order to describe example embodiments of the disclosure, it should be apparent to one skilled in the art that the embodiments of the disclosure can be practiced without, or with variation of, these specific details. Accordingly, the description is to be regarded as illustrative instead of restrictive.
While the present disclosure has been described in conjunction with specific embodiments thereof, many alternatives, modifications, and variations of these embodiments will be apparent to those of ordinary skill in the art in light of the foregoing description. For example, other memory architectures (e.g., dynamic ram (dram)) may use the discussed embodiments.
The disclosed embodiments are intended to embrace all such alternatives, modifications and variances which fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalents, improvements, and the like that may be made within the spirit and principles of the embodiments of the disclosure are intended to be included within the scope of the disclosure.
Claims (10)
1. A method for positioning failure of a light-emitting diode, wherein the light-emitting diode has a plastic package structure, and the method comprises the following steps:
electrical property testing electrical parameters of the failed light-emitting diode, and judging whether the connection fails according to the electrical parameters;
if yes, determining whether the package and the external pin are normal;
if yes, ray testing is carried out to determine whether the internal pin and the chip are normal;
if yes, ray testing is carried out to determine whether the bonding wire is internally broken;
and if so, thinning the plastic package structure and determining the position of the internal fracture of the bonding wire.
2. The method of claim 1, further comprising: and removing the residual plastic package structure, exposing the bonding wire, analyzing the picture of the bonding wire fracture opening, and determining the reason of the bonding wire fracture.
3. The method for positioning failure of a light emitting diode according to claim 2, wherein analyzing the microscope picture of the bonding wire fracture opening to determine the cause of the bonding wire fracture specifically comprises:
analyzing the form of the bonding wire fracture in the picture;
if at least one of microcracks, damages or small bonding area exists at the bonding wire fracture opening, judging that the reason of the bonding wire fracture is a production factor;
if the bonding wire fracture opening has the characteristics of fatigue fracture or tensile fracture, the bonding wire fracture reason is judged to be a use factor.
4. The method for locating the failure of the light-emitting diode according to claim 2, wherein the step of removing the residual plastic package structure and exposing the bonding wire specifically comprises the steps of:
and (3) corroding the residual plastic package structure by concentrated sulfuric acid dropwise until the necking part of the bonding point is exposed.
5. The method for locating failure of a light emitting diode according to claim 1, wherein the radiation testing to determine whether the internal fracture of the bonding wire specifically comprises:
and analyzing the ray picture of the light-emitting diode, and determining whether the bonding wire is internally broken according to whether the outside of the bonding wire is broken.
6. The method of claim 5, wherein determining whether the bonding wire is internally broken comprises:
and determining whether a suspected breakpoint exists in the bonding wire.
7. The method of claim 1, wherein the electrical parameters comprise: at least one of a forward current and a forward voltage; the electrical parameters of the failed light-emitting diode in the electrical property test specifically include:
a predetermined forward voltage or current is applied between the positive electrode pin and the negative electrode pin of the failed light emitting diode, and the presence or absence of a forward current value or a forward voltage value is detected.
8. The method for locating failure of an led according to claim 7, wherein the determining whether the connection failure is specific comprises:
judging whether the anode and the cathode of the light-emitting diode are in an open circuit state or an on-off state according to the forward current value and the forward voltage value;
if yes, the connection fails.
9. The method for locating failure of a light emitting diode according to claim 1, wherein the radiation test for determining whether the internal pin and the chip are normal specifically comprises:
and analyzing the ray picture of the light-emitting diode, determining whether the internal pin is deformed or broken, and determining whether the bonding position of the chip is normal.
10. The method for locating the failure of the light-emitting diode according to claim 1, wherein the thinning plastic package structure specifically comprises: and the plastic package structure is gradually thinned by a grinding method until the inside of the bonding wire can be identified.
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| CN115656331A (en) * | 2022-11-22 | 2023-01-31 | 胜科纳米(苏州)股份有限公司 | Unsealing and analyzing method and equipment for tracing failure root cause of chip cracking |
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