CN112916500B - Wafer cleaning device and cleaning method - Google Patents
Wafer cleaning device and cleaning method Download PDFInfo
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- CN112916500B CN112916500B CN202110099510.9A CN202110099510A CN112916500B CN 112916500 B CN112916500 B CN 112916500B CN 202110099510 A CN202110099510 A CN 202110099510A CN 112916500 B CN112916500 B CN 112916500B
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- bevel gear
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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Abstract
The invention discloses a wafer cleaning device, which comprises a cleaning chamber, wherein liquid silicon wafer cleaning liquid is filled in the cleaning chamber; the system also comprises a master controller; a spray pipe is transversely arranged between the side walls of the two opposite surfaces of the cleaning chamber and is in sliding connection with the inner wall of the cleaning chamber; a row of linear spraying holes are formed in the bottom of the spraying pipe, and the silicon wafer cleaning liquid circulates in the spraying pipe and is sprayed out of the spraying holes; the cleaning chamber is also internally provided with an electric cylinder which is electrically connected with the main controller and is electrically controlled by the main controller, a push rod of the electric cylinder is vertically upward, the push rod is fixedly connected with a round wafer base, and the wafer base is driven by the push rod to move in the vertical direction. According to the invention, when impurities are detected by infrared rays, the rotation of the wafer base is stopped in time, and the impurities on the surface of the wafer are accurately washed by moving the spray pipe to the position above the wafer base.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a wafer cleaning device and a wafer cleaning method.
Background
In a semiconductor process, the surface of a wafer has more impurities and burrs after the surface of the wafer is subjected to photoetching and other processes, the semiconductor process has extremely high requirement on the cleanliness of the surface of the wafer, incomplete cleaning or the quality of the wafer is influenced by the existence of various burr impurities, so that the subsequent semiconductor process is greatly influenced. Therefore, it is important to detect surface impurities after wafer cleaning.
In the prior art, the cleaning of the wafer is carried out by immersing the whole wafer into a silicon wafer cleaning solution, although the wafer can be cleaned in a large area, when the viscosity of impurities on the surface of the wafer is high or the impurities are adsorbed on the surface of the wafer due to static electricity and the like, the wafer can be directly immersed into the silicon wafer cleaning solution to clean the surface impurities pertinently, and the wafer which is originally cleaned completely can be easily adsorbed by impurities in the silicon wafer cleaning solution again when being immersed into the silicon wafer cleaning solution again. In conclusion, the prior art can not clean impurities on the surface of the wafer in a targeted manner, i.e. the cleaning is incomplete.
Disclosure of Invention
The invention aims to solve the problems and provides a wafer cleaning device and a wafer cleaning method which can accurately clean impurities on the surface of a wafer.
The invention is realized by the following technical scheme: the invention provides a wafer cleaning device, which comprises a cleaning chamber, wherein liquid silicon wafer cleaning liquid is filled in the cleaning chamber; the system also comprises a master controller; a spraying pipe is transversely arranged between the side walls of the two opposite surfaces of the cleaning chamber and is in sliding connection with the inner wall of the cleaning chamber; a row of linear spraying holes are formed in the bottom of the spraying pipe, and the silicon wafer cleaning liquid circulates in the spraying pipe and is sprayed out of the spraying holes; the cleaning chamber is also internally provided with an electric cylinder which is electrically connected with the main controller and is electrically controlled by the main controller, a push rod of the electric cylinder is vertically upward, the push rod is fixedly connected with a circular wafer base, and the wafer base is driven by the push rod to move in the vertical direction; the pushing rod pushes the wafer base to a position lower than the spraying pipe, and when the spraying pipe slides to the position above the wafer base, the spraying holes spray the silicon wafer cleaning liquid to clean the linear region of the upper surface of the wafer base.
The beneficial effects that adopt above-mentioned technological means can produce: through locating impurity below the shower for accurate injection is realized to the shower, realizes the accurate washing to impurity.
Optionally, a first bevel gear and a second bevel gear which are matched with each other to rotate are further arranged in the cleaning chamber; the second bevel gear is fixedly connected with the gear driving motor and rotates under the driving of the gear driving motor; the bottom of the gear driving motor is fixedly connected with a shifting iron sheet, the shifting iron sheet is fixedly connected with one end of a shifting spring, the other end of the shifting spring is fixedly connected with a shifting electromagnet, and the shifting electromagnet is fixedly connected with the bottom wall of the cleaning chamber; the gear driving motor and the shifting electromagnet are both electrically connected with the main controller and controlled to be opened and closed by the main controller; the center of the circle on the upper surface of the first bevel gear is fixedly connected with the electric cylinder, and the electric cylinder is driven by the first bevel gear to rotate along with the first bevel gear; the circle center of the lower surface of the first bevel gear is rotationally connected with a gear shaft rod, the gear shaft rod is fixedly connected with the bottom wall of the cleaning chamber, and the first bevel gear is driven by the second bevel gear to rotate by taking the gear shaft rod as a central shaft; the shifting electromagnet adsorbs the shifting iron sheet under the condition of electrification, the shifting spring is compressed, the gear driving motor is driven by the shifting iron sheet to move towards the shifting electromagnet, and the second bevel gear is away from the position matched with the first bevel gear.
The beneficial effects that adopt above-mentioned technological means can produce: can in time stop when detecting that there is impurity on the wafer surface for impurity is located the parallel line parallel with the shower all the time, thereby is favorable to accurate spraying and washs.
Optionally, one side of the gear driving motor is further rotationally connected with the pulley through a positioning rod; the pulley is embedded into the first positioning track and slides in the first positioning track; the first positioning rail is vertically and fixedly arranged on the side wall of the cleaning chamber; the upper and lower bottom surfaces of the first positioning rail are closed for constraining the pulley sliding region.
The beneficial effect that adopts above-mentioned technical means can produce: when the first bevel gear and the second bevel gear need to stop rotating, the two bevel gears can be timely kept away, and therefore the influence of delayed stop of the motor due to inertia when the gear drives the motor is avoided.
Optionally, a stop electromagnet is fixedly arranged on the side wall of the cleaning chamber; the stop electromagnet is fixedly connected with one end of a stop spring, and the other end of the stop spring is fixedly connected with a stop iron block; a fourth positioning track is fixedly arranged on the side wall of the cleaning chamber and is vertical to the side wall of the cleaning chamber; the bottom of the stop iron block is fixedly connected with a movable sliding block, the movable sliding block is embedded into the fourth positioning track and slides in the fourth positioning track, and the sliding of the movable sliding block drives the stop iron block to slide; the stop electromagnet is electrically connected with the main controller and is controlled by the main controller to be electrified; a protruding piece is arranged on the stop iron block, and the protruding piece is clamped into the first bevel gear in a reset state of the stop spring; when the power is on, the stop electromagnet adsorbs the stop spring to compress the stop spring, and the protruding piece leaves the first bevel gear.
The beneficial effects that adopt above-mentioned technological means can produce: the bevel gear can be stopped in time by the protruding piece.
Optionally, one end of the spray pipe is closed, and the other end of the spray pipe is fixedly connected with one end of the vertical water pipe to form a through pipe; the vertical water pipe is perpendicular to the bottom wall of the cleaning chamber; the other end of the vertical water pipe is fixedly connected with a water pump; the water pump is arranged below the liquid level of the silicon wafer cleaning liquid in the cleaning chamber and is used for pumping the silicon wafer cleaning liquid and conveying the silicon wafer cleaning liquid into the spraying pipe through the vertical water pipe for spraying; the water pump is electrically connected with the main controller and is controlled to be opened and closed by the main controller.
The beneficial effects that adopt above-mentioned technological means can produce: the silicon wafer cleaning liquid can be recycled.
Optionally, the side walls of two opposite surfaces of the cleaning chamber are respectively provided with a second positioning track; the two second positioning rails are parallel to the bottom wall of the cleaning chamber; a sliding rod is fixedly arranged in each of the two second positioning rails; the two ends of the spray pipe are fixedly connected with a first sliding piece, a first sliding hole is formed in the first sliding piece, and the first sliding hole is sleeved on the sliding rod so that the first sliding piece can slide along the sliding rod; the shower pipe horizontally moves by sliding the first sliding piece on the sliding rod.
Optionally, a third positioning rail is further formed on the side wall of the water pump, the third positioning rail is parallel to the second positioning rail and is arranged below the second positioning rail, and a threaded rod is arranged in the third positioning rail; the threaded rod is fixedly connected with the water pipe driving motor and is driven by the water pipe driving motor to rotate; the water pump is fixedly connected with the second sliding piece, a second sliding hole is formed in the second sliding piece, and threads are arranged on the inner wall of the second sliding hole; the second sliding hole is sleeved on the threaded rod, and the second sliding piece moves along the threaded rod when the threaded rod rotates; the water pipe driving motor is electrically connected with the main controller and is controlled by the main controller to rotate and rotate.
The beneficial effect that adopts above-mentioned technical means can produce: the movement of the spray pipe can be realized, so that the wafer can smoothly move up and down.
Optionally, an ultrasonic oscillator is further fixedly arranged on the inner wall of the cleaning chamber; the ultrasonic oscillator is arranged below the liquid level of the silicon wafer cleaning liquid in the cleaning chamber and drives the silicon wafer cleaning liquid to vibrate through ultrasonic vibration, so that the purpose of ultrasonic cleaning is achieved; the inner wall of the cleaning chamber is also fixedly provided with a blower; the air blower is arranged above the liquid level of the silicon wafer cleaning liquid in the cleaning chamber and is also arranged above the second positioning track; the ultrasonic oscillator and the air blower are both electrically connected with the main controller and are controlled by the main controller to be opened and closed.
The beneficial effect that adopts above-mentioned technical means can produce: the wafer soaked in the silicon wafer cleaning solution can be cleaned by ultrasonic waves.
Optionally, the side walls of the two opposite surfaces of the cleaning chamber are further fixedly provided with an infrared emitter and an infrared receiver respectively; the infrared transmitter and the infrared receiver are mutually opposite to form an opposite straight line; the wafer base is provided with a diameter line parallel to the spray pipe, the diameter line is parallel to the correlation straight line, and a detection plane formed by the diameter line and the correlation straight line is vertical to the bottom wall of the cleaning chamber; and the spraying of the spraying pipe when the spraying pipe moves to the detection plane realizes the spraying of the area on the diameter line.
The beneficial effect that adopts above-mentioned technical means can produce: can make impurity be located on the straight line that parallels with the shower all the time.
The invention also discloses a wafer cleaning method, which adopts the wafer cleaning device and comprises the following steps:
the method comprises the following steps: a wafer is placed on the wafer base, and the master controller controls the electric cylinder to lower the wafer base below the liquid level of the silicon wafer cleaning solution; the main controller controls the gear driving motor to drive the second bevel gear to rotate, and the second bevel gear drives the first bevel gear to rotate; the main controller controls the stop electromagnet to be electrified so as to adsorb the stop iron ore, and the protruding piece leaves the first bevel gear;
step two: the main controller controls the ultrasonic oscillator to start, the silicon wafer cleaning solution vibrates, and a wafer placed on the wafer base realizes ultrasonic cleaning;
step three: the main controller controls the ultrasonic oscillator to stop vibrating, controls the electric air cylinder to lift the wafer base to a position parallel to the air blower, and controls the air blower to blow and dry liquid on the surface of the wafer;
step four: the main controller controls the air blower to stop blowing air, the main controller controls the electric air cylinder to lift the wafer base to a position where the upper surface of the wafer is tangent to the correlation straight line, the main controller controls the infrared emitter to emit infrared rays, and the infrared receiver receives the infrared rays and sends a receiving signal to the main controller for processing;
step five: when the infrared emitter emits infrared rays and the infrared receiver does not receive the infrared ray signal, the main controller controls the gear driving motor to stop rotating and controls the shifting electromagnet to be electrified to adsorb the shifting iron sheet, the gear driving motor moves downwards along the first positioning track, and the second bevel gear leaves a position matched with the first bevel gear;
step six: the main controller controls the stop electromagnet to stop electrifying, the stop iron block moves towards the first bevel gear along the fourth positioning track under the reset thrust of the stop spring, the protruding piece is clamped into the first bevel gear, and the first bevel gear stops rotating;
step seven: the main controller controls the electric cylinder to lower the wafer base to the position below the spray pipe, controls the water pipe driving motor to be started, enables the spray pipe to move to the detection plane above the diameter line of the wafer base, controls the water pump to pump the silicon wafer cleaning liquid and sprays the silicon wafer cleaning liquid through the spray pipe, and enables the silicon wafer cleaning liquid sprayed by the spray pipe to be aligned to the diameter line;
step eight: the main controller controls the water pump to stop starting, controls the electric air cylinder to lift the wafer base to a position parallel to the air blower again, and controls the air blower to blow and dry liquid on the surface of the wafer;
repeating the fourth step to the eighth step.
The invention has the beneficial effects that:
according to the invention, when the impurities on the surface of the wafer are detected by infrared rays and when the receiving of the infrared rays is detected to be incomplete, the rotation of the gear driving motor is stopped in time, the first bevel gear is clamped by the protrusion part, and the first bevel gear stops rotating immediately, so that the impurities on the wafer are ensured to be positioned on a diameter line, and the diameter line is parallel to the correlation straight line. The main controller makes the shower be located the diameter line top of wafer base through the vertical direction position of the horizontal direction position of controlling the shower and wafer base, and the silicon chip washing liquid that the shower jetted this moment just can jet downwards to the region of diameter line place to the realization is to the accurate location spray rinsing of wafer impurity.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention. In the drawings:
FIG. 1 is a schematic diagram illustrating an overall structure of a wafer cleaning apparatus according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating positions of a second positioning rail, a first sliding hole, a third positioning rail and a second sliding hole of a wafer cleaning apparatus according to an embodiment of the invention;
FIG. 3 is a schematic diagram illustrating a fourth positioning track of a wafer cleaning apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a gear driving motor and associated components of a wafer cleaning apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating a position of a pulley of a wafer cleaning apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating the positions of spray holes of a wafer cleaning apparatus according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a system control of a wafer cleaning apparatus according to one embodiment of the present invention;
FIG. 8 is a simplified diagram of a wafer pedestal in a wafer cleaning method according to a second embodiment of the present invention, the wafer pedestal being placed in a silicon wafer cleaning solution;
fig. 9 is a simplified schematic diagram illustrating a drying status of the starting blower in the wafer cleaning method according to the second embodiment of the present invention;
FIG. 10 is a simplified diagram illustrating the infrared detection of contaminant states in a second wafer cleaning method according to one embodiment of the present invention;
FIG. 11 is a simplified schematic diagram of a detection plane in the first and second embodiments of the present invention;
001-a cleaning chamber; 002-silicon wafer cleaning solution; 003-the master controller;
100-an infrared emitter; 110-an infrared receiver; 120-correlation straight line; 130-a detection plane;
200-a blower; 300-an ultrasonic oscillator;
400-wafer pedestal; 410-diameter line; 420-an electric cylinder; 421-push rod; 430-gear shaft lever; 440-a first bevel gear;
500-gear drive motor; 510-a displacement electromagnet; 520-a displacement spring; 530-shifting iron sheets; 540-second bevel gear; 550-positioning rod; 560-a pulley;
600-a projection; 610-stop electromagnet; 620-stop spring; 630-stop iron block; 640-moving the slider;
710-a first positioning track; 720-a second positioning track; 721-a slide bar; 722-a first slide; 723-a first sliding aperture; 730-a third positioning track; 731-threaded rod; 732-a second slide; 733 — second sliding hole; 740-a fourth positioning track;
800-spraying pipe; 810-spray holes; 820-vertical water pipes; 830-a water pump; 840-water pipe driving motor.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without inventive step, are within the scope of protection of the invention.
Unless defined otherwise, technical or scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the description and in the claims of the present application does not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another.
The first embodiment is as follows:
the embodiment discloses a wafer belt cleaning device can realize ultrasonic cleaning, dry and infrared detection impurity to when infrared detection wafer surface impurity, make impurity be located wafer base 400's diameter line 410 region, and realize accurately rinsing the impurity on wafer surface through shower 800.
Specifically, the wafer cleaning device disclosed in this embodiment includes purge chamber 001, is equipped with liquid silicon chip washing liquid 002 in purge chamber 001, still includes master controller 003.
As shown in fig. 1 to 6, a spray pipe 800 is transversely disposed between two opposite side walls of the cleaning chamber 001, and the spray pipe 800 is slidably connected to an inner wall of the cleaning chamber 001. As shown in fig. 6, a row of linear spray holes 810 are formed in the bottom of the spray pipe 800, and the silicon wafer cleaning liquid 002 flows through the spray pipe 800 and is sprayed from the spray holes 810. As shown in fig. 7, an electric cylinder 420 electrically connected to the master controller 003 and electrically controlled by the master controller 003 is further disposed in the cleaning chamber 001, a push rod 421 of the electric cylinder 420 is vertically upward, the push rod 421 is fixedly connected to the circular wafer base 400, and the wafer base 400 is driven by the push rod 421 to move in the vertical direction. When the pushing rod 421 pushes the wafer base 400 to a position lower than the spraying pipe 800 and the spraying pipe 800 slides to the upper side of the wafer base 400, the spraying holes 810 spray the silicon wafer cleaning liquid 002 to clean the linear region of the upper surface of the wafer base 400.
Specifically, a first bevel gear 440 and a second bevel gear 540 are further disposed in the cleaning chamber 001 for rotating in cooperation with each other. As shown in fig. 4, the second bevel gear 540 is fixedly connected to the gear driving motor 500 and driven by the gear driving motor 500 to rotate.
As shown in fig. 4-5, the bottom of the gear driving motor 500 is fixedly connected to a shifting iron sheet 530, the shifting iron sheet 530 is fixedly connected to one end of a shifting spring 520, the other end of the shifting spring 520 is fixedly connected to a shifting electromagnet 510, and the shifting electromagnet 510 is fixedly connected to the bottom wall of the washing chamber 001. The gear driving motor 500 and the shifting electromagnet 510 are electrically connected with the main controller 003 and are controlled by the main controller 003 to be opened and closed.
The center of the upper surface of the first bevel gear 440 is fixedly connected with the electric cylinder 420, and the electric cylinder 420 is driven by the first bevel gear 440 to rotate along with the first bevel gear 440. The circle center of the lower surface of the first bevel gear 440 is rotatably connected with the gear shaft rod 430, the gear shaft rod 430 is fixedly connected with the bottom wall of the cleaning chamber 001, and the first bevel gear 440 is driven by the second bevel gear 540 to rotate by taking the gear shaft rod 430 as a central shaft.
When the shifting electromagnet 510 is electrified, the shifting iron piece 530 is attracted, the shifting spring 520 is compressed, the gear driving motor 500 is driven by the shifting iron piece 530 to move towards the shifting electromagnet 510, and the second bevel gear 540 leaves the position matched with the first bevel gear 440.
Specifically, as shown in fig. 4, one side of the gear driving motor 500 is further rotatably connected to the pulley 560 through the positioning rod 550. The pulley 560 is embedded in the first positioning rail 710 and slides in the first positioning rail 710. The first positioning rail 710 is fixedly provided vertically on a sidewall of the cleaning chamber 001. The upper and lower bottom surfaces of the first seating rail 710 are closed for restraining the sliding region of the pulley 560.
Specifically, as shown in fig. 1-3, a stop electromagnet 610 is further fixedly disposed on a sidewall of the cleaning chamber 001. The stop electromagnet 610 is fixedly connected with one end of a stop spring 620, and the other end of the stop spring 620 is fixedly connected with a stop iron block 630. The lateral wall of purge chamber 001 still sets firmly fourth location track 740, and fourth location track 740 is perpendicular with the lateral wall of purge chamber 001. The bottom of the stop iron block 630 is fixedly connected with a movable slider 640, the movable slider 640 is embedded in the fourth positioning track 740 and slides in the fourth positioning track 740, and the sliding of the movable slider 640 drives the sliding of the stop iron block 630.
As shown in fig. 7, the stop electromagnet 610 is electrically connected to the master 003 and is controlled by the master 003 to be powered on. As shown in fig. 2, a protrusion 600 is provided on the stop iron block 630, and the protrusion 600 is inserted into the first bevel gear 440 when the stop spring 620 is in a reset state. When the power is on, the stop electromagnet 610 adsorbs the stop spring 620, so that the stop spring 620 is compressed, and the protruding member 600 leaves the first bevel gear 440.
Specifically, one end of the spray pipe 800 is closed, and the other end of the spray pipe 800 is fixedly connected with one end of the vertical water pipe 820 to form a through pipe. The vertical water pipe 820 is perpendicular to the bottom wall of the cleaning chamber 001. The other end of the vertical water pipe 820 is fixedly connected with a water pump 830. The water pump 830 is arranged below the liquid level of the silicon wafer cleaning liquid 002 in the cleaning chamber 001, and the water pump 830 is used for pumping the silicon wafer cleaning liquid 002 and conveying the silicon wafer cleaning liquid 002 into the spray pipe 800 through the vertical water pipe 820 for spraying. As shown in fig. 7, the water pump 830 is electrically connected to the main controller 003, and is controlled by the main controller 003 to be turned on or off.
Specifically, as shown in fig. 1 and 4, the two opposite side walls of the cleaning chamber 001 are respectively provided with a second positioning rail 720. Both second positioning rails 720 are parallel to the bottom wall of the cleaning chamber 001. A sliding rod 721 is fixedly disposed in each of the two second positioning rails 720. As shown in fig. 2, two ends of the shower pipe 800 are fixedly connected to a first sliding member 722, the first sliding member 722 is provided with a first sliding hole 723, and the first sliding hole 723 is sleeved on the sliding rod 721 so that the first sliding member 722 slides along the sliding rod 721. The shower 800 is horizontally moved by sliding the first slider 722 on the sliding rod 721.
Specifically, as shown in fig. 1 and fig. 2, a third positioning rail 730 is further disposed on the side wall of the water pump 830, the third positioning rail 730 is parallel to the second positioning rail 720 and is disposed below the second positioning rail 720, and a threaded rod 731 is disposed in the third positioning rail 730. The threaded rod 731 is fixedly connected with the water pipe driving motor 840 and rotates under the driving of the water pipe driving motor 840. The water pump 830 is fixedly connected to the second sliding member 732, a second sliding hole 733 is formed in the second sliding member 732, and a screw thread is formed on an inner wall of the second sliding hole 733. The second sliding hole 733 is fitted over the threaded rod 731, and the second slider 732 moves along the threaded rod 731 when the threaded rod 731 rotates. The water pipe driving motor 840 is electrically connected with the main controller 003, and is controlled by the main controller 003 to rotate and rotate.
Specifically, the ultrasonic oscillator 300 is further fixedly arranged on the inner wall of the cleaning chamber 001. The ultrasonic oscillator 300 is arranged below the liquid level of the silicon wafer cleaning liquid 002 in the cleaning chamber 001, and drives the silicon wafer cleaning liquid 002 to vibrate through ultrasonic vibration, so that the purpose of ultrasonic cleaning is achieved. The blower 200 is also fixedly arranged on the inner wall of the cleaning chamber 001. The blower 200 is disposed above the liquid level of the silicon wafer cleaning liquid 002 in the cleaning chamber 001 and above the second positioning rail 720. The ultrasonic oscillator 300 and the air blower 200 are both electrically connected with the master controller 003 and are controlled by the master controller 003 to be opened and closed.
Specifically, as shown in fig. 1 and 4, the infrared emitter 100 and the infrared receiver 110 are respectively fixed on two opposite side walls of the cleaning chamber 001. As shown in fig. 10-11, infrared transmitter 100 and infrared receiver 110 are aligned with each other to form alignment line 120. The wafer pedestal 400 has a diametric line 410 parallel to the shower pipe 800, the diametric line 410 is parallel to the correlation line 120, and the detection plane 130 formed by the diametric line 410 and the correlation line 120 is perpendicular to the bottom wall of the cleaning chamber 001. The spray of shower 800 when moved onto detection plane 130 effects a spray of a region on direct line 410.
Example two.
The embodiment discloses a wafer cleaning method, which adopts the wafer cleaning device in the first embodiment, and specifically comprises the following steps:
the method comprises the following steps: the wafer is placed on the wafer pedestal 400 and the master 003 controls the electric cylinder 420 to lower the wafer pedestal 400 below the level of the silicon wafer cleaning solution 002. The main controller 003 controls the gear driving motor 500 to drive the second bevel gear 540 to rotate, and the second bevel gear 540 drives the first bevel gear 440 to rotate. The main controller 003 controls the stop electromagnet 610 to be electrified so as to adsorb the stop iron ore, and the protruding part 600 leaves the first bevel gear 440.
Step two: the master controller 003 controls the ultrasonic oscillator 300 to start, the silicon wafer cleaning liquid 002 vibrates, and the wafer placed on the wafer base 400 is cleaned ultrasonically. As shown in fig. 8, the wafer on the wafer pedestal 400 is cleaned in a wafer cleaning solution 002.
Step three: the master controller 003 controls the ultrasonic oscillator 300 to stop vibrating, as shown in fig. 9, the master controller 003 controls the electric cylinder 420 to lift the wafer pedestal 400 to a position parallel to the air blower 200, and the master controller 003 controls the air blower 200 to blow dry the liquid on the wafer surface.
Step four: as shown in fig. 10, the master 003 controls the air blower 200 to stop blowing, the master 003 controls the electric cylinder 420 to lift the wafer substrate 400 to a position where the upper surface of the wafer is tangent to the correlation straight line 120, the master 003 controls the infrared emitter 100 to emit infrared rays, and the infrared receiver 110 receives the infrared rays and sends a receiving signal to the master 003 for processing. When the surface of the wafer has no impurities, the infrared ray can be completely received by the infrared receiver 110; when impurities exist on the surface of the wafer, the infrared rays are blocked by the impurities, the infrared rays cannot receive the infrared rays or only receive partial infrared rays, and the main controller 003 can judge whether the impurities exist on the surface of the wafer after processing the condition that whether the receiving quantity of the infrared rays is equal to the transmitting quantity through the infrared receiver 110.
Step five: when the infrared transmitter 100 transmits infrared rays and the infrared receiver 110 does not receive an infrared signal, the main controller 003 controls the gear driving motor 500 to stop rotating and controls the shifting electromagnet 510 to be electrified to adsorb the shifting iron piece 530, the gear driving motor 500 moves downwards along the first positioning track 710, and the second bevel gear 540 leaves a position matched with the first bevel gear 440.
Step six: the main controller 003 controls the stop electromagnet 610 to stop energizing, the stop iron block 630 moves towards the first bevel gear 440 along the fourth positioning track 740 under the reset thrust of the stop spring 620, the protrusion 600 is clamped into the first bevel gear 440, and the first bevel gear 440 stops rotating.
Step seven: the main controller 003 controls the electric cylinder 420 to lower the wafer pedestal 400 to the position below the spray pipe 800, the main controller 003 controls the water pipe driving motor 840 to start and enables the spray pipe 800 to move to the detection plane 130 above the diameter line 410 of the wafer pedestal 400, the main controller 003 controls the water pump 830 to pump the silicon wafer cleaning liquid 002 and spray the silicon wafer cleaning liquid through the spray pipe 800, and the silicon wafer cleaning liquid 002 sprayed by the spray pipe 800 is aligned to the diameter line 410.
Step eight: the master 003 controls the water pump 830 to stop starting, the master 003 controls the electric cylinder 420 to lift the wafer base 400 to a position parallel to the air blower 200 again, and the master 003 controls the air blower 200 to blow the liquid on the wafer surface.
Repeating the fourth step to the eighth step until the infrared rays emitted by the infrared emitter 100 are all received by the infrared receiver 110 when the wafer rotates for one circle, and judging that the impurities on the surface of the wafer are completely cleaned if the infrared receiver 110 does not receive the incomplete infrared rays in the middle.
In the embodiment, when the impurities on the surface of the wafer are detected by infrared rays, when incomplete infrared ray receiving is detected, the rotation of the gear driving motor 500 is stopped in time, the second bevel gear 540 which plays a main driving role is separated from the position matched with the first bevel gear 440, the protruding part 600 blocks the first bevel gear 440 after the stop iron block 630 is popped up, and the first bevel gear 440 stops rotating immediately, so that the impurities on the wafer are ensured to be positioned on the diameter line 410, and the diameter line 410 is parallel to the correlation straight line 120. The horizontal direction position of main controller 003 through controlling shower 800 and the vertical direction position of wafer base 400 makes shower 800 be located the diameter line 410 top of wafer base 400, and the silicon chip washing liquid 002 that shower 800 jetted this moment just can spout downwards to the region of diameter line 410 to the realization is to the accurate location spray rinsing of wafer impurity.
Above-mentioned embodiment can realize the ultrasonic cleaning to the wafer simultaneously, dry by blowing and the function of infrared ray detection impurity to realize removing the wafer to the region of place of each different process through electric cylinder 420, accomplish washing, stoving and detection achievement back, electric cylinder 420 rises wafer base 400 to wafer belt cleaning device's exit position department, makes things convenient for the staff to take.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and these modifications or substitutions do not depart from the spirit of the corresponding technical solutions of the embodiments of the present invention.
In summary, the above description is only a preferred embodiment of the present invention, and all the equivalent changes and modifications made according to the claims of the present invention should be covered by the present invention.
Claims (9)
1. The wafer cleaning device is characterized by comprising a cleaning chamber (001), wherein liquid silicon wafer cleaning liquid is filled in the cleaning chamber (001); further comprising a master (003);
a spray pipe (800) is transversely arranged between the side walls of the two opposite surfaces of the cleaning chamber (001), and the spray pipe (800) is in sliding connection with the inner wall of the cleaning chamber (001); a row of linear spraying holes (810) are formed in the bottom of the spraying pipe (800), and the silicon wafer cleaning liquid circulates in the spraying pipe (800) and is sprayed out of the spraying holes (810);
an electric cylinder (420) electrically connected with the main controller (003) and electrically controlled by the main controller (003) is further arranged in the cleaning chamber (001), a push rod (421) of the electric cylinder (420) is vertically upward, the push rod (421) is fixedly connected with a circular wafer base (400), and the wafer base (400) is driven by the push rod (421) to move in the vertical direction;
when the pushing rod (421) pushes the wafer base (400) to a position lower than the spray pipe (800) and the spray pipe (800) slides to the position above the wafer base (400), the spray holes (810) spray the silicon wafer cleaning liquid to realize the positioning cleaning of the linear area of the upper surface of the wafer base (400);
the side walls of the two opposite surfaces of the cleaning chamber (001) are respectively and fixedly provided with an infrared emitter (100) and an infrared receiver (110); the infrared transmitter (100) and the infrared receiver (110) are mutually opposite to form an opposite straight line (120); the wafer base (400) is provided with a diameter line (410) parallel to the spray pipe (800), the diameter line (410) is parallel to the correlation straight line (120), and a detection plane (130) formed by the diameter line (410) and the correlation straight line (120) is vertical to the bottom wall of the cleaning chamber (001); the spraying of the shower (800) when moved onto the detection plane (130) effects a spraying of an area on a direct line (410).
2. Wafer cleaning device as claimed in claim 1, characterized in that the cleaning chamber (001) is further provided therein with a first bevel gear (440) and a second bevel gear (540) which are rotated in cooperation with each other; the second bevel gear (540) is fixedly connected with the gear driving motor (500) and rotates under the driving of the gear driving motor (500);
the bottom of the gear driving motor (500) is fixedly connected with a shifting iron sheet (530), the shifting iron sheet (530) is fixedly connected with one end of a shifting spring (520), the other end of the shifting spring (520) is fixedly connected with a shifting electromagnet (510), and the shifting electromagnet (510) is fixedly connected with the bottom wall of the cleaning chamber (001);
the gear driving motor (500) and the shifting electromagnet (510) are both electrically connected with the main controller (003) and are controlled to be opened and closed by the main controller (003);
the circle center of the upper surface of the first bevel gear (440) is fixedly connected with the electric cylinder (420), and the electric cylinder (420) is driven by the first bevel gear (440) to rotate along with the first bevel gear (440); the circle center of the lower surface of the first bevel gear (440) is rotatably connected with a gear shaft rod (430), the gear shaft rod (430) is fixedly connected with the bottom wall of the cleaning chamber (001), and the first bevel gear (440) is driven by the second bevel gear (540) to rotate by taking the gear shaft rod (430) as a central shaft;
the shifting electromagnet (510) adsorbs the shifting iron sheet (530) under the condition of electrifying, the shifting spring (520) is compressed, the gear driving motor (500) is driven by the shifting iron sheet (530) to move towards the shifting electromagnet (510), and the second bevel gear (540) leaves the position matched with the first bevel gear (440).
3. Wafer cleaning device as claimed in claim 2, characterized in that one side of the gear drive motor (500) is further connected with a pulley (560) in a rotating manner by a positioning rod (550); the pulley (560) is embedded in the first positioning track (710) and slides in the first positioning track (710); the first positioning track (710) is vertically and fixedly arranged on the side wall of the cleaning chamber (001); the upper and lower bottom surfaces of the first positioning rail (710) are closed for restraining the pulley (560) sliding area.
4. A wafer cleaning device as claimed in claim 3, characterized in that the side wall of the cleaning chamber (001) is further fixedly provided with a stop electromagnet (610); the stop electromagnet (610) is fixedly connected with one end of a stop spring (620), and the other end of the stop spring (620) is fixedly connected with a stop iron block (630); a fourth positioning rail (740) is further fixedly arranged on the side wall of the cleaning chamber (001), and the fourth positioning rail (740) is perpendicular to the side wall of the cleaning chamber (001); the bottom of the stop iron block (630) is fixedly connected with a movable sliding block (640), the movable sliding block (640) is embedded into the fourth positioning track (740) and slides in the fourth positioning track (740), and the sliding of the movable sliding block (640) drives the stop iron block (630) to slide;
the stop electromagnet (610) is electrically connected with the main controller (003) and is controlled by the main controller (003) to be electrified; a protruding piece (600) is arranged on the stop iron block (630), and the protruding piece (600) is clamped into the first bevel gear (440) in the reset state of the stop spring (620); when the power is on, the stop electromagnet (610) adsorbs the stop spring (620), so that the stop spring (620) is compressed, and the protruding piece (600) leaves the first bevel gear (440).
5. Wafer cleaning device as set forth in claim 4, characterized in that one end of the spray pipe (800) is closed, and the other end of the spray pipe (800) is fixedly connected with one end of the vertical water pipe (820) and forms a through pipe; the vertical water pipe (820) is vertical to the bottom wall of the cleaning chamber (001); the other end of the vertical water pipe (820) is fixedly connected with a water pump (830); the water pump (830) is arranged below the liquid level of the silicon wafer cleaning liquid in the cleaning chamber (001), and the water pump (830) is used for extracting the silicon wafer cleaning liquid and conveying the silicon wafer cleaning liquid into the spray pipe (800) through the vertical water pipe (820) for spraying; the water pump (830) is electrically connected with the main controller (003) and is controlled to be opened and closed by the main controller (003).
6. Wafer cleaning device as claimed in claim 5, characterized in that the two opposite side walls of the cleaning chamber (001) are each provided with a second positioning track (720); both of the second positioning rails (720) are parallel to the bottom wall of the cleaning chamber (001); a sliding rod (721) is fixedly arranged in each of the two second positioning tracks (720); two ends of the spray pipe (800) are fixedly connected with a first sliding piece (722), a first sliding hole (723) is formed in the first sliding piece (722), and the first sliding hole (723) is sleeved on the sliding rod (721) so that the first sliding piece (722) slides along the sliding rod (721); the shower pipe (800) is horizontally moved by sliding the first slider (722) on the sliding rod (721).
7. The wafer cleaning device as recited in claim 6, wherein a third positioning rail (730) is further formed on the side wall of the water pump (830), the third positioning rail (730) is parallel to the second positioning rail (720) and is arranged below the second positioning rail (720), and a threaded rod (731) is arranged in the third positioning rail (730); the threaded rod (731) is fixedly connected with the water pipe driving motor (840) and rotates under the driving of the water pipe driving motor (840); the water pump (830) is fixedly connected with the second sliding part (732), a second sliding hole (733) is formed in the second sliding part (732), and threads are arranged on the inner wall of the second sliding hole (733); the second sliding hole (733) is sleeved on the threaded rod (731), and the second sliding piece (732) moves along the threaded rod (731) when the threaded rod (731) rotates; the water pipe driving motor (840) is electrically connected with the main controller (003) and is controlled by the main controller (003) to rotate and rotate.
8. The wafer cleaning device as set forth in claim 7, characterized in that an ultrasonic oscillator (300) is further fixed to the inner wall of the cleaning chamber (001); the ultrasonic oscillator (300) is arranged below the liquid level of the silicon wafer cleaning liquid in the cleaning chamber (001), and drives the silicon wafer cleaning liquid to vibrate through ultrasonic vibration, so that the purpose of ultrasonic cleaning is achieved;
the inner wall of the cleaning chamber (001) is fixedly provided with a blower (200); the air blower (200) is arranged above the liquid level of the silicon wafer cleaning liquid in the cleaning chamber (001) and is arranged above the second positioning rail (720) at the same time;
the ultrasonic oscillator (300) and the air blower (200) are both electrically connected with the main controller (003) and are controlled by the main controller (003) to be opened and closed.
9. A wafer cleaning method using the wafer cleaning apparatus set forth in claim 8, characterized by comprising the steps of:
the method comprises the following steps: a wafer is placed on the wafer base (400), and the main controller (003) controls the electric cylinder (420) to lower the wafer base (400) below the liquid level of the silicon wafer cleaning liquid; the main controller (003) controls the gear driving motor (500) to drive the second bevel gear (540) to rotate, and the second bevel gear (540) drives the first bevel gear (440) to rotate; the main controller (003) controls the stop electromagnet (610) to be electrified so as to adsorb the stop iron block (630), and the protruding piece (600) leaves the first bevel gear (440);
step two: the master controller (003) controls the ultrasonic oscillator (300) to start, the silicon wafer cleaning solution vibrates, and a wafer placed on the wafer base (400) is cleaned by ultrasonic wave;
step three: the main controller (003) controls the ultrasonic oscillator (300) to stop vibrating, the main controller (003) controls the electric cylinder (420) to lift the wafer base (400) to a position parallel to the air blower (200), and the main controller (003) controls the air blower (200) to blow dry the liquid on the surface of the wafer;
step four: the main controller (003) controls the air blower (200) to stop blowing air, the main controller (003) controls the electric cylinder (420) to lift the wafer base (400) to a position where the upper surface of the wafer is tangent to the correlation straight line (120), the main controller (003) controls the infrared transmitter (100) to transmit infrared rays, and the infrared receiver (110) receives the infrared rays and sends a receiving signal to the main controller (003) for processing;
step five: when the infrared transmitter (100) transmits infrared rays and the infrared receiver (110) does not receive the infrared signal, the main controller (003) controls the gear driving motor (500) to stop rotating and controls the shifting electromagnet (510) to be electrified so as to adsorb the shifting iron sheet (530), the gear driving motor (500) moves downwards along the first positioning track (710), and the second bevel gear (540) leaves a position matched with the first bevel gear (440);
step six: the main controller (003) controls the stop electromagnet (610) to stop electrifying, the stop iron block (630) moves towards the first bevel gear (440) along the fourth positioning track (740) under the reset thrust of the stop spring (620), the protrusion piece (600) is clamped into the first bevel gear (440), and the first bevel gear (440) stops rotating;
step seven: the master controller (003) controls the electric cylinder (420) to lower the wafer base (400) below the spray pipe (800), the master controller (003) controls the water pipe driving motor (840) to be started and enables the spray pipe (800) to move to the detection plane (130) above the diameter line (410) of the wafer base (400), the master controller (003) controls the water pump (830) to pump the silicon wafer cleaning liquid and spray the silicon wafer cleaning liquid through the spray pipe (800), and the silicon wafer cleaning liquid sprayed by the spray pipe (800) is aligned with the diameter line (410);
step eight: the main controller (003) controls the water pump (830) to stop starting, the main controller (003) controls the electric cylinder (420) again to lift the wafer base (400) to a position parallel to the air blower (200), and the main controller (003) controls the air blower (200) to blow dry liquid on the surface of the wafer;
repeating the fourth step to the eighth step.
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| CN113898166B (en) * | 2021-11-20 | 2023-02-17 | 广东凯宏建设工程有限公司 | Green energy-saving glass curtain wall construction equipment and construction method thereof |
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| JP2005105414A (en) * | 2003-09-11 | 2005-04-21 | Shunji Murano | Linearly and uniformly discharging device, atomizing device, thin film deposition device, pattern forming device, three-dimensional forming device, and cleaning device |
| CN110660703A (en) * | 2018-06-29 | 2020-01-07 | 台湾积体电路制造股份有限公司 | Semiconductor processing system and pollution control method of semiconductor processing system |
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| JP4787089B2 (en) * | 2006-06-26 | 2011-10-05 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
| CN104658947B (en) * | 2014-12-31 | 2018-01-12 | 上海新阳半导体材料股份有限公司 | Wafer cleaning device |
| CN205289078U (en) * | 2015-12-31 | 2016-06-08 | 天津天物金佰微电子有限公司 | Wafer -cleaning device |
| CN205550954U (en) * | 2016-04-06 | 2016-09-07 | 国网湖北省电力公司咸宁供电公司 | Ultrasonic wave 3D belt cleaning device |
| CN111604105B (en) * | 2020-06-04 | 2020-12-18 | 福建永东南建设集团有限公司 | Waste concrete cleaning and recycling device |
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| JP2005105414A (en) * | 2003-09-11 | 2005-04-21 | Shunji Murano | Linearly and uniformly discharging device, atomizing device, thin film deposition device, pattern forming device, three-dimensional forming device, and cleaning device |
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