CN112910419A - Power amplifier chip output matching circuit with out-of-band gain suppression function - Google Patents
Power amplifier chip output matching circuit with out-of-band gain suppression function Download PDFInfo
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- CN112910419A CN112910419A CN202110080507.2A CN202110080507A CN112910419A CN 112910419 A CN112910419 A CN 112910419A CN 202110080507 A CN202110080507 A CN 202110080507A CN 112910419 A CN112910419 A CN 112910419A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
Abstract
The invention discloses a power amplifier chip output matching circuit with an out-of-band gain suppression function, which comprises a substrate, an active region, a radio frequency output matching circuit and an out-of-band gain suppression circuit. The active region, the radio frequency output matching circuit and the out-of-band gain suppression circuit are all arranged on the substrate, and the out-of-band gain suppression circuit and the radio frequency output matching circuit are provided with a shared microstrip line and a parallel capacitor circuit. According to the invention, the series capacitor and the method for connecting the microstrip lines are introduced at the drain bias microstrip line of the power amplifier, and the series capacitor and the connecting microstrip line are connected in parallel with the drain bias microstrip line, so that the out-of-band gain suppression function is integrated under the condition that the size of a chip of the power amplifier is not increased, the influence or interference of the emission power on the out-of-band frequency band is reduced, the loss of the introduced output matching circuit is small, the influence on the output power and the efficiency of the power amplifier chip is small, and the noise deterioration of the input end of the power amplifier is not caused.
Description
Technical Field
The invention relates to an output matching circuit of a power amplifier chip, in particular to an output matching circuit of a power amplifier chip with an out-of-band gain suppression function.
Background
Microwave solid-state power amplifiers are key components in microwave communication systems. The second generation semiconductor GaAs power amplifier and the third generation semiconductor GaN power amplifier are applied to a large amount of engineering in a communication system. With the rapid development of 5G communication and satellite internet, the microwave communication system has increasingly higher miniaturization, out-of-band rejection degree and emission efficiency of the emission component. The integration level of the chip is improved, the size of the chip is reduced, the miniaturization of the component is important, the improvement of the out-of-band rejection degree has an important effect on reducing the influence or interference of the emission power on the out-of-band frequency band, and the electromagnetic compatibility of the system is improved. By reducing the capacitance value, the suppression frequency of the out-of-band gain suppression circuit can be moved to a second harmonic frequency band, so that the second harmonic suppression degree is improved, useless second harmonic power emission is reduced, and the power amplification efficiency is improved.
In the existing microwave component, the out-of-band rejection degree is improved by connecting a band-pass filter at the output end of a power amplifier chip or adding LC circuit branches at the output port of the power amplifier. However, the insertion loss of the filter will significantly reduce the output power and power added efficiency of the power amplifier, and if a cavity filter with low insertion loss is adopted, the problem of large volume of the cavity filter is inevitable. The way of adding LC circuit branches at the output port of the power amplifier chip often affects the indexes such as in-band output power and additional efficiency.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide an output matching circuit of a power amplifier chip, which reduces the influence or interference of transmitting power on an out-of-band frequency band and has an out-of-band gain suppression function.
The technical scheme is as follows: the power amplifier chip output matching circuit comprises a substrate, an active area, a radio frequency output matching circuit and an out-of-band suppression circuit, wherein the active area, the radio frequency output matching circuit and the out-of-band suppression circuit are all arranged on the substrate; the active region is a field effect transistor and is connected with the input end of the circuit; the radio frequency output matching circuit is connected with the drain electrode of the active region; the out-of-band suppression circuit forms a parallel resonance circuit and comprises a serial capacitor and connecting microstrip circuit, a seventh microstrip, a microstrip line and a parallel capacitor circuit, wherein the serial capacitor and connecting microstrip circuit is connected with the seventh microstrip in parallel, and the seventh microstrip is connected with the microstrip line and the parallel capacitor circuit in series; the out-of-band suppression circuit and the radio frequency output matching circuit are provided with a shared microstrip line and a parallel capacitor circuit.
The radio frequency output matching circuit comprises a microstrip line, a parallel capacitor circuit, a seventh microstrip, a first microstrip, a second microstrip, a third capacitor and a fourth capacitor; one end of the first microstrip is connected with the drain electrode of the active region, and the other end of the first microstrip is respectively connected with the second microstrip, the microstrip line and the parallel capacitor circuit; the second microstrip is respectively connected with a third capacitor and a fourth capacitor, the other end of the third capacitor is grounded, and the other end of the fourth capacitor is an output end.
The microstrip line and the parallel capacitor circuit comprise a third microstrip, a sixth microstrip and a second capacitor; the third microstrip is connected with a sixth microstrip through a seventh microstrip; one end of the second capacitor is connected with the sixth microstrip, and the other end of the second capacitor is grounded;
the series capacitor and connecting microstrip circuit comprises a fourth microstrip, a fifth microstrip and a first capacitor, wherein one end of the fourth microstrip is connected with the third microstrip, and the other end of the fourth microstrip is connected with the first capacitor; one end of the fifth microstrip is connected with the sixth microstrip, and the other end of the fifth microstrip is connected with the first capacitor; the capacitance value of the first capacitor is adjustable; the series capacitor and the connecting microstrip circuit are connected with the seventh microstrip in parallel.
The first capacitor is an MIM capacitor, or a microstrip cross capacitor, or a slot coupling capacitor, or a microstrip broadside coupling capacitor.
The substrate is made of silicon carbide, silicon, sapphire or diamond.
The series capacitor and the connecting microstrip circuit are one group or a plurality of groups, and each group is respectively connected with the seventh microstrip in parallel.
Compared with the prior art, the invention has the following remarkable effects: 1. by introducing the series capacitor and the method for connecting the series capacitor with the microstrip line, and the series capacitor and the microstrip line connected with the series capacitor are in parallel connection with the leakage offset microstrip line of the power amplifier, a parallel resonance circuit is formed under the condition that the size of a chip of the power amplifier is not increased, the out-of-band rejection function is realized, and the influence or interference of the transmission power of the power amplifier on the out-of-band frequency band is reduced; 2. the loss of the introduced out-of-band gain suppression circuit is small, the influence on the in-band output power and the efficiency of the power amplifier is small, and the noise degradation of the input end of the power amplifier is not caused.
Drawings
FIG. 1 is a general structure diagram of an equivalent circuit of the present invention;
FIG. 2 is a graph of power amplifier gain versus noise for the circuit of the present invention and a circuit without out-of-band rejection;
FIG. 3 is a graph comparing the output matching loss of the circuit of the present invention with that of an out-of-band rejection circuit;
in fig. 4, (a) is the power amplifier chip with out-of-band suppression circuit, (b) is the power amplifier chip without out-of-band suppression circuit, and the inside of the virtual coil is the difference between the two power amplifier chips; (c) is an enlarged view within a dotted circle in the figure (a);
FIG. 5 (a) is a diagram of a high band out-of-band gain suppression power amplifier chip structure according to the present invention, and (b) is a partially enlarged view of the diagram (a);
fig. 6 is a comparison graph of the out-of-band gain suppression effect of the circuit of the present invention and the out-of-band suppression circuit (second harmonic band marked by dashed circle).
Detailed Description
The invention is described in further detail below with reference to the drawings and the detailed description.
The power amplifier chip output matching circuit comprises a substrate, an active area 1, a radio frequency output matching circuit 2 and an out-of-band suppression circuit 3, wherein the active area 1, the radio frequency output matching circuit 2 and the out-of-band suppression circuit 3 are all arranged on the substrate, and the out-of-band suppression circuit 3 and the radio frequency output matching circuit 2 share a microstrip line and a parallel capacitor circuit 32 (comprising a third microstrip MSL3, a sixth microstrip MSL6 and a second capacitor C2); the out-of-band suppression circuit 3 forms a parallel resonance circuit, which comprises a serial capacitance and connection microstrip circuit 31, a seventh microstrip, a microstrip line and parallel capacitance circuit 32, wherein the serial capacitance and connection microstrip circuit 31 is connected with the seventh microstrip in parallel, and the seventh microstrip is connected with the microstrip line and parallel capacitance circuit 32 in series; as shown in fig. 1.
The substrate is made of silicon carbide, silicon, sapphire or diamond.
The first Capacitor adopts MIM Capacitor (Metal-Insulator-Metal Capacitor), or microstrip cross Capacitor, or slot coupling Capacitor, or microstrip broadside coupling Capacitor.
A parallel resonance circuit is formed by the fourth microstrip MSL4, the fifth microstrip MSL5, the first capacitor C1, the third microstrip MSL3, the sixth microstrip MSL6 and the second capacitor C2, and out-of-band gain suppression is achieved; the change of the out-of-band rejection frequency band is realized by adjusting the capacitance value of the first capacitor C1; the capacitance value of the first capacitor C1 is reduced, and the out-of-band rejection frequency band is changed towards the high frequency direction; the capacitance of the first capacitor C1 increases, and the out-of-band rejection band changes toward low frequencies. The seventh microstrip MSL7 is a part of the drain-biased microstrip and is implemented to provide dc power to the die of the active region 1, while having the inductance characteristic of the drain-biased microstrip to match the capacitance characteristic of the die.
The invention realizes the suppression of different out-of-band frequency bands by connecting one or more groups of series capacitors in parallel and connecting the microstrip circuit 31.
The first capacitor C1 is implemented in different forms, such as an MIM capacitor, a microstrip cross capacitor, a slot coupling capacitor, a microstrip broadside coupling capacitor, and the like.
The existing out-of-band gain suppression method is realized by adding an LC branch or a filter structure at the output end of a chip, but the invention introduces a method of a series capacitor and a connecting microstrip circuit 31, and the series capacitor and the connecting microstrip circuit 31 thereof are in parallel connection with a power amplifier drain bias microstrip (comprising a third microstrip MSL3, a sixth microstrip MSL6 and a seventh microstrip MSL 7). Under the condition of not increasing the chip size of the power amplifier, the out-of-band rejection function is integrated, and the influence or interference of the transmission power of the power amplifier on an out-of-band frequency band is reduced; the introduced output matching circuit has small loss, so that the in-band output power and efficiency of the power amplifier are less affected, and the noise degradation of the input end of the power amplifier is not caused, as shown in fig. 2.
In order to verify the effectiveness of the low-loss output matching chip circuit with the out-of-band rejection function, a simulation experiment is carried out, and the design parameters are as follows: the working frequency is 25-27GHz, the out-of-band rejection frequency is 22.5-23.5GHz, and the gain rejection degree is more than or equal to 10dB (the in-band highest gain is 28dB, and the out-of-band highest gain is 18 dB). The chip was realized using 0.15um gaasphmemt process, as shown in fig. 4.
Fig. 4(a) is a chip diagram of the power amplifier chip output matching circuit of the present invention, fig. 4 (b) is a power amplifier chip without an out-of-band suppression circuit, and the virtual coil is different between the two power amplifier chips; fig. 4 (c) is a partially enlarged view of fig. 4 (a).
The comparison results are shown in fig. 2, and effective gain suppression is achieved for out-of-band suppression frequencies. As can be seen from the comparison result of the output matching loss of the out-of-band rejection circuit in fig. 3, in the 25-27GHz working band, the out-of-band gain rejection circuit only increases the loss of 0.07dB compared with the out-of-band rejection circuit, and realizes the low-loss out-of-band rejection function.
Fig. 5 shows a power amplifier chip with a suppression function outside a high frequency band according to the present invention, which has a function of suppressing a second harmonic. The circuit of the invention has the advantages of high out-of-band gain suppression and comparison effect with the gain of a non-out-of-band suppression circuit, and as shown in fig. 6, the low-loss out-of-band suppression function is realized in a 51-52GHz working frequency band.
Claims (6)
1. The utility model provides a power amplifier chip output matching circuit with out-of-band gain inhibit function which characterized in that: the active power amplifier comprises a substrate, an active area (1), a radio frequency output matching circuit (2) and an out-of-band rejection circuit (3), wherein the active area (1), the radio frequency output matching circuit (2) and the out-of-band rejection circuit (3) are all arranged on the substrate; the active region (1) is a field effect transistor and is connected with the input end of the circuit; the radio frequency output matching circuit (2) is connected with the drain electrode of the active region (1); the out-of-band suppression circuit (3) forms a parallel resonance circuit and comprises a series capacitor and connecting microstrip circuit (31), a seventh microstrip, a microstrip line and a parallel capacitor circuit (32), wherein the series capacitor and connecting microstrip circuit (31) is connected with the seventh microstrip in parallel, and the seventh microstrip is connected with the microstrip line and the parallel capacitor circuit (32) in series; the out-of-band rejection circuit (3) and the radio frequency output matching circuit (2) are provided with a shared microstrip line and a parallel capacitor circuit (32).
2. The power amplifier chip output matching circuit with out-of-band gain suppression function according to claim 1, wherein the radio frequency output matching circuit (2) comprises a microstrip line, a parallel capacitor circuit (32), a seventh microstrip, a first microstrip, a second microstrip, a third capacitor and a fourth capacitor; one end of the first microstrip is connected with the drain electrode of the active region (1), and the other end of the first microstrip is respectively connected with the second microstrip, the microstrip line and the parallel capacitor circuit (32); the second microstrip is respectively connected with a third capacitor and a fourth capacitor, the other end of the third capacitor is grounded, and the other end of the fourth capacitor is an output end.
3. The output matching circuit of the power amplifier chip with out-of-band gain suppression function according to claim 1, characterized in that: the microstrip line and parallel capacitor circuit (32) comprises a third microstrip, a sixth microstrip and a second capacitor; the third microstrip is connected with a sixth microstrip through a seventh microstrip; one end of the second capacitor is connected with the sixth microstrip, and the other end of the second capacitor is grounded;
the series capacitor and connection microstrip circuit (31) comprises a fourth microstrip, a fifth microstrip and a first capacitor, wherein one end of the fourth microstrip is connected with the third microstrip, and the other end of the fourth microstrip is connected with the first capacitor; one end of the fifth microstrip is connected with the sixth microstrip, and the other end of the fifth microstrip is connected with the first capacitor; the capacitance value of the first capacitor is adjustable; the series capacitor and the connecting microstrip circuit (31) are connected with the seventh microstrip in parallel.
4. The output matching circuit of the power amplifier chip with out-of-band gain suppression function according to claim 3, characterized in that: the first capacitor is an MIM capacitor, a microstrip cross capacitor, a slot coupling capacitor or a microstrip broadside coupling capacitor.
5. The output matching circuit of the power amplifier chip with out-of-band gain suppression function according to claim 1, characterized in that: the substrate is made of silicon carbide, silicon, sapphire or diamond.
6. The power amplifier chip output matching circuit with out-of-band gain suppression function according to claim 1, wherein the series capacitance and the connection microstrip circuit (31) are one or more groups, and each group is respectively connected in parallel with a seventh microstrip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110080507.2A CN112910419A (en) | 2021-01-21 | 2021-01-21 | Power amplifier chip output matching circuit with out-of-band gain suppression function |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110080507.2A CN112910419A (en) | 2021-01-21 | 2021-01-21 | Power amplifier chip output matching circuit with out-of-band gain suppression function |
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| CN112910419A true CN112910419A (en) | 2021-06-04 |
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| CN202110080507.2A Pending CN112910419A (en) | 2021-01-21 | 2021-01-21 | Power amplifier chip output matching circuit with out-of-band gain suppression function |
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Citations (10)
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| JPH09186536A (en) * | 1995-12-28 | 1997-07-15 | Fujitsu Ltd | Power amplifier circuit |
| US5982236A (en) * | 1997-01-21 | 1999-11-09 | Matsushita Electric Industrial Co., Ltd. | High-frequency power amplifier |
| US20040041634A1 (en) * | 2002-08-30 | 2004-03-04 | Kabushiki Kaisha Toshiba | High-frequency power amplifier |
| JP2005311579A (en) * | 2004-04-20 | 2005-11-04 | Miyoshi Electronics Corp | Semiconductor device |
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| JP2011166271A (en) * | 2010-02-05 | 2011-08-25 | Mitsubishi Electric Corp | Bias circuit |
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2021
- 2021-01-21 CN CN202110080507.2A patent/CN112910419A/en active Pending
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| US5982236A (en) * | 1997-01-21 | 1999-11-09 | Matsushita Electric Industrial Co., Ltd. | High-frequency power amplifier |
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| JP2005311579A (en) * | 2004-04-20 | 2005-11-04 | Miyoshi Electronics Corp | Semiconductor device |
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| JP2011166271A (en) * | 2010-02-05 | 2011-08-25 | Mitsubishi Electric Corp | Bias circuit |
| CN101882915A (en) * | 2010-04-30 | 2010-11-10 | 苏州英诺迅科技有限公司 | Push-pull type radio-frequency power amplifier with improved linearity |
| CN103430449A (en) * | 2011-01-31 | 2013-12-04 | 株式会社友华 | Terrestrial broadcast wave reception-use antenna device and component of same |
| JP2015220542A (en) * | 2014-05-15 | 2015-12-07 | 三菱電機株式会社 | amplifier |
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