CN112909070A - 超大电流高di/dt晶闸管管芯结构 - Google Patents
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Abstract
一种大电流高电压、高电流上升率的超大电流高di/dt晶闸管管芯结构，包括硅片、门极、阴极和台面保护，其特殊之处是：所述硅片为N型(100)晶向的中照单晶硅片，在硅片上进行双面P层扩散形成P1层和P2层，P1层表面研磨后扩P+层做阳极面，P2层表面经氧化光刻、单面进行三氯氧磷N+扩散形成N2区，构成非对称的晶闸管P+P1N1P2N2基本结构，所述N2区为所述阴极，所述阴极为条状且条宽为0.5～1.5mm，所述阴极周围为所述门极，所述门极包围所述阴极，且门极与阴极的面积比＝1：8～1：10。
Description
技术领域
本发明涉及一种新型功率半导体器件，特别涉及一种超大电流高di/dt晶闸管管芯结构。
背景技术
大功率晶闸管晶闸管是应用广泛的功率器件，在实际使用中造成大功率晶闸管晶闸管损坏的最主要原因是di/dt耐量偏低。
国内晶闸管的标准规定：di/dt的标准范围di/dt＝(50～1000)A/μs，这个标准已不能满足要求，实际需要更大的di/dt耐量的晶闸管。
提高晶闸管di/dt耐量的最常用的方法就是设短路点以提高器件的高温特性，设放大门极以提高di/dt耐量。设短路点的弊病就是阻碍电流的横向扩展，而放大电流受应用条件的限制，不利于强触发。放大门极要充分起作用，才能确保高di/dt耐量。目前普遍采用提高门极电压而达到提高门极触发电流的方法，这就要求放大门极对应的P基区横向电阻比主阴极对应的横向电阻大很多很多，如10倍、20倍…50倍、100倍等。如此，将造成主阴极上头排短路点太靠近放大门极，反而使初始导通面积太小，而造成di/dt耐量下降。
发明内容
本发明的目的是要解决现有技术存在的上述问题，提供一种大电流高电压、高电流上升率的超大电流高di/dt晶闸管管芯结构。
本发明的技术解决方案是：
一种超大电流高di/dt晶闸管管芯结构，包括硅片、门极、阴极和台面保护，其特殊之处是：所述硅片为N型(100)晶向的中照单晶硅片，在硅片上进行双面P层扩散形成P1层和P2层，P1层表面研磨后扩P+层做阳极面，P2层表面经氧化光刻、单面进行三氯氧磷N+扩散形成N2区，构成非对称的晶闸管P+P1N1P2N2基本结构，所述N2区为所述阴极，所述阴极为条状且条宽为0.5～1.5mm，所述阴极周围为所述门极，所述门极包围所述阴极，且门极与阴极的面积比＝1：8～1：10。
进一步优选，所述硅片台面为喷砂造型，且正斜角为大角度喷砂，喷角θ1为70°～80°的正角，宽度b1≤0.5mm；负斜角为喷砂造型，实现类台面造型，且负角θ2≤5°，宽度b2≤2.0mm。台面造型由磨角造型改为喷砂造型，即正斜角为大角度喷砂，一改磨角角度只能35度以下的状况，可喷70～80度的正角；负斜角也改为喷砂造型，实现类台面造型。阴极面积大，表面漏电流小。
进一步优选，阴极欧姆接触采用超高真空下电子束蒸发大颗粒金属铝，铝层厚度为15～20μm。
进一步优选，阳极欧姆接触采用超高真空下电子束蒸发钛-镍-金，蒸镀层Ti、Ni及Au层厚度分别为0.2μm、0.5μm及0.1μm，确保器件长时间的可靠性。
进一步优选，所述N型(100)晶向单晶硅片的电阻率为40～200Ω-cm。
本发明的提高di/dt基本出发点就是取消放大门极，取消短路点，其有益效果是：
1、采用N型(100)晶向低阻单晶硅片，相比(111)晶向单晶片，使电流扩展能力提高了20％～30％，有利于电流上升率di/dt的提高。
2、取消放大门极，彻底解决应用中出现的放大门极不起作用，而导致di/dt非但不增加，反而下降的问题。
3、取消短路点，等于去掉了横向扩展中的阻碍电流的柱状P区，有利于di/dt的提高。其带来的高温特性变坏的问题，由严格控制阴极条宽，且采用门极包围阴极的分布结构而解决。
4、经检测，直径Φ(75～100)mm、电流容量为(2000～10000)A、耐压水平在VRRM＝(1200～5500)V的晶闸管器件的电流上升率耐量达到di/dt＝(2000～10000)A/μs，可满足用户的需求。
附图说明
图1是本发明的芯片结构示意图；
图2是本发明的光刻版图示意图；
图3是本发明的全压接封装内部结构示意图；
图4是本发明的台面喷砂造型结构示意图。
具体实施方式
下面结合附图和实施例对本发明进行详细说明，以下仅为本发明的具体实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
实施例1
如图1－图3所示，该超大电流高di/dt晶闸管，包括硅片1、门极2、阴极3和台面保护4，台面保护4采用聚酰亚胺。
所述硅片1为N型(100)晶向、电阻率为80Ω-cm、直径76mm、厚度0.36mm的中照单晶硅片，在硅片1上闭管镓铝扩散形成双面P层即P1层和P2层，P1层结深Xjp1＝63μm，P2层结深Xj1＝90μm，Vsp＝11mV/mA，P1层表面研磨后(研磨厚度d＝8μm)扩P+层做阳极面，P+层结深XjP+＝10μm，Vp+＝0.04mV/mA，P2层表面经氧化光刻、单面进行三氯氧磷N+扩散形成N2区，N2区结深Xj2＝15μm，VsN+＝0.08mV/mA，构成非对称的晶闸管P+P1N1P2N2基本结构。
所述N2区以硅片1中心为圆心由内至外呈多个圆环状分布形成所述阴极3，对应每个圆环的阴极3为细条状并且径向均布，阴极3周围即为所述门极2，所述门极2包围阴极3，所述阴极3条宽为1.0mm，所述门极2与阴极3的面积比＝1：9。
所述阴极欧姆接触采用超高真空下电子束蒸发大颗粒金属铝形成铝层5，所述铝层5厚度为15μm、所述阳极欧姆接触采用超高真空下电子束蒸发钛-镍-金形成蒸镀层6，蒸镀层6中Ti:Ni:Au层厚度＝0.2:0.5:0.1(单位：μm)。
如图4所示，所述硅片1的台面为喷砂造型，即正斜角为大角度喷砂，正斜角θ1＝70°、宽度b1＝0.4mm；负斜角为喷砂造型，实现类台面造型，且负斜角θ2＝4°、宽度b2＝1.5mm，总宽度＝1.9mm。
经检测电流容量为2500A、耐压水平VRRM＝2000V，晶闸管器件的电流上升率耐量di/dt＝2500A/μs。
实施例2
如图1－图3所示，该超大电流高di/dt晶闸管管芯结构，包括硅片1，门极2、阴极3和台面保护4，台面保护4采用聚酰亚胺。
所述硅片为N型(100)晶向、电阻率为140Ω-cm、直径76mm、厚度0.75mm的中照单晶硅片，在硅片1上闭管镓铝扩散形成双面P层，P1层结深Xjp1＝80μm，P2层结深Xj1＝120μm，Vsp＝12mV/mA，P1层表面研磨后(研磨厚度d＝10μm)硼扩P+层做阳极面，P+层结深XjP+＝16μm，Vp+＝0.04mV/mA，P2层表面经氧化光刻、单面进行三氯氧磷N+扩散形成N2区，N2区结深Xj2＝16μm，VsN+＝0.09mV/mA，构成非对称的晶闸管P+P1N1P2N2基本结构。
所述N2区以硅片1中心为圆心由内至外呈多个圆环状分布形成所述阴极3，对应每个圆环的阴极3为细条状并且径向均布，阴极3周围即为所述门极2，所述门极2包围阴极3，所述阴极3条宽为1.2mm，所述门极2与阴极3的面积比＝1：10。
如图4所示，所述硅片台面为喷砂造型，即正斜角为大角度喷砂，喷角θ1＝72°，宽度b1＝0.5mm；负斜角为喷砂造型，实现类台面造型，且负角θ2＝3°，宽度b2＝2.0mm，总宽度＝2.5mm，采用聚酰亚胺作为台面保护4。
所述阴极欧姆接触采用超高真空下电子束蒸发大颗粒金属铝，铝层5厚度为18μm、阳极欧姆接触采用超高真空下电子束蒸发钛-镍-金，蒸镀层6中Ti:Ni:Au＝0.2:0.5:0.1。
实施例1、实施例2中2500A/10KHz高频晶闸管的制造方法为：
N型(100)晶向高阻单晶硅片测试、筛选、分类→去砂、去油、清洗、腐蚀→甩干→闭管镓铝扩散→氧化→阳极面P+扩散→阴极面磨片→氧化→光刻→三氯氧磷气体携带N+扩散→光刻→电子束蒸发→正负角喷砂造型→腐蚀、钝化、保护、烘干→中测→全压接装配→真空充氮气冷封→氦质谱捡漏→出厂全参数检测→打印→合格证→入库。
按照实施例1、实施例2分别做出10只成品，检测结果见表1：
以上仅为本发明的具体实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (5)
1.一种超大电流高di/dt晶闸管管芯结构，包括硅片、门极、阴极和台面保护，其特征是：所述硅片为N型(100)晶向的中照单晶硅片，在硅片上进行双面P层扩散形成P1层和P2层，P1层表面研磨后扩P+层做阳极面，P2层表面经氧化光刻、单面进行三氯氧磷N+扩散形成N2区，构成非对称的晶闸管P+P1N1P2N2基本结构，所述N2区为所述阴极，所述阴极为条状且条宽为0.5～1.5mm，所述阴极周围为所述门极，所述门极包围所述阴极，且门极与阴极的面积比＝1：8～1：10。
2.根据权利要求1所述的超大电流高di/dt晶闸管管芯结构，其特征是：所述硅片台面为喷砂造型，且正斜角为大角度喷砂，喷角θ1为70°～80°的正角，宽度b1≤0.5mm；负斜角为喷砂造型，实现类台面造型，且负角θ2≤5°，宽度b2≤2.0mm。台面造型由磨角造型改为喷砂造型，即正斜角为大角度喷砂，一改磨角角度只能35度以下的状况，可喷70～80度的正角；负斜角也改为喷砂造型，实现类台面造型。阴极面积大，表面漏电流小。
3.根据权利要求1所述的超大电流高di/dt晶闸管管芯结构，其特征是：阴极欧姆接触采用超高真空下电子束蒸发大颗粒金属铝，铝层厚度为15～20μm。
4.根据权利要求1所述的超大电流高di/dt晶闸管管芯结构，其特征是：阳极欧姆接触采用超高真空下电子束蒸发钛-镍-金，蒸镀层Ti、Ni及Au层厚度分别为0.2μm、0.5μm及0.1μm，确保器件长时间的可靠性。
5.根据权利要求1所述的超大电流高di/dt晶闸管管芯结构，其特征是：所述N型(100)晶向单晶硅片的电阻率为40～200Ω-cm。
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