CN112904174A - Power supply and analog signal current and voltage control device for semiconductor test - Google Patents
Power supply and analog signal current and voltage control device for semiconductor test Download PDFInfo
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- CN112904174A CN112904174A CN202110150403.4A CN202110150403A CN112904174A CN 112904174 A CN112904174 A CN 112904174A CN 202110150403 A CN202110150403 A CN 202110150403A CN 112904174 A CN112904174 A CN 112904174A
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- 238000012360 testing method Methods 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 230000003321 amplification Effects 0.000 claims abstract description 41
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 41
- 239000003990 capacitor Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 230000009471 action Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/28—Provision in measuring instruments for reference values, e.g. standard voltage, standard waveform
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Abstract
The invention provides a power supply for semiconductor test and a current and voltage control device for analog signals, which comprises a power supply module and a power amplification module electrically connected with the power supply module; the power supply module is divided into a high-source power supply and a low-source power supply; the power amplifier module comprises two middle-stage amplification modules which are respectively connected with the power supply module and the bias amplification module in parallel, four power output amplification modules which are respectively connected with the two middle-stage amplification modules and the power supply module in parallel, the bias amplification module is formed by connecting a transistor MJE340 and a transistor MJE350 in parallel, and the power output amplification module is formed by connecting a high-performance transistor MJE4343 and a high-performance transistor MJE4343 in parallel.
Description
Technical Field
The invention belongs to the technical field of analog signal current and voltage control devices for semiconductor testing, and particularly relates to a power supply for semiconductor testing and an analog signal current and voltage control device.
Background
Semiconductor devices are electronic devices that have electrical conductivity between a good electrical conductor and an insulator, and that use the special electrical properties of semiconductor materials to perform specific functions, and can be used to generate, control, receive, convert, amplify signals, and perform energy conversion. The semiconductor material of the semiconductor device is silicon, germanium or gallium arsenide, and can be used as a material for a rectifier, an oscillator, a light emitter, an amplifier, a photodetector, or the like. For the purpose of distinction from integrated circuits, they are sometimes also referred to as discrete devices. The basic structure of most two-terminal devices (i.e., crystal diodes) is a PN junction.
During testing of a semiconductor device, a test program is usually written on a software interface of a PC (personal computer), i.e., an upper computer, then a digital signal is sent out by using a parallel port bus form through an embedded computer, i.e., a lower computer, then the digital signal is converted into an analog signal through DA conversion, the analog signal is divided into a control low source signal and a control high source signal (voltage or current) and respectively output, the control low source signal and the control high source signal are amplified into a required power signal (voltage or current) and output to a device to be tested, so that the test of the semiconductor device is completed, the conventional power supply usually adopts a conventional triode or MOS transistor in the test process, and the current or voltage adjustability of the test power supply is poor, so that the accuracy and convenience of the test are influenced, and the overall efficiency of the test.
Disclosure of Invention
The present invention is directed to a power supply for semiconductor test and an analog signal current-voltage control device, which are provided to solve the above-mentioned problems.
In order to solve the technical problems, the invention adopts the technical scheme that: a power supply and analog signal current and voltage control device for semiconductor test comprises a power supply module and a power amplification module electrically connected with the power supply module;
the power supply module is divided into a high-source power supply and a low-source power supply;
the power amplifier module comprises a bias amplification module, a middle-stage amplification module and a power output amplification module, wherein the number of the middle-stage amplification module is two, the middle-stage amplification module is respectively connected with the power supply module and the bias amplification module in parallel, the number of the power output amplification module is four, and the power output amplification module is respectively connected with the two middle-stage amplification modules and the power supply module in parallel.
Preferably, the power module is characterized in that an external 220V alternating current is connected with a rectifier bridge A2 through a voltage transformer T, the rectifier bridge A2 is connected with a capacitor C9 and a capacitor C10, a thyristor Q12 and a thyristor Q13 are connected outside the rectifier bridge A2, and a ground wire is connected between the capacitor C9 and the capacitor C10.
Preferably, a comparator U7A, a resistor R32 and a resistor R34 which are connected in series with each other, a capacitor CF1 are further connected between the outside of the thyristor Q12 and the ground wire, and the cathode of the comparator U7A is connected between the resistor R32 and the resistor R34;
a comparator U7B, a resistor R33 and a resistor R41 which are connected in series with each other, and a capacitor CF2 are connected between the outside of the thyristor Q13 and the ground line, and the cathode of the comparator U7A is connected between the resistor R32 and the resistor R34.
Preferably, the bias amplifying module is formed by connecting a transistor MJE340 and a transistor MJE350 in parallel, and the intermediate amplifying module is formed by connecting a transistor MJE15030 and a transistor MJE15031 in parallel.
Preferably, the power output amplifying module is formed by connecting a high-performance transistor MJE4343 and a high-performance transistor MJE4343 in parallel.
Compared with the prior art, the invention has the following advantages:
1. the adjusting tube in the power module adopts a thyristor instead of a traditional triode or MOS tube, the introduced thyristor can generate larger current, and the output stage of the power module is connected with a group of capacitors with large capacitance values, specifically 10mF, in parallel, the group of capacitors are energy storage devices and can provide large current support in short-time pulse test, wherein the high-source part is 50A, and the low-source part is 10A.
2. The power amplifier module is designed in three stages and comprises a bias amplifier module, a middle-stage amplifier module and a power output amplifier module, wherein the power output amplifier module is realized by connecting 4 pairs of high-performance transistors MJE4343 and MJE4353 in parallel, a push-pull structure realizes the maximum output dynamic voltage range and current amplification capacity, through test verification, the power amplifier modules can be further connected in parallel according to current requirements to arbitrarily amplify the load capacity, and through a parallel power amplifier unit array, the output current can be up to 1250A or above.
Drawings
FIG. 1 is a diagram of an overall power module circuit device of the present invention;
FIG. 2 is a schematic frame diagram of the power amplifier module of the present invention;
FIG. 3 is a schematic diagram of a high voltage source circuit in the high voltage source under test according to the present invention;
FIG. 4 is a schematic diagram of a high-power current source circuit in the high-power supply under test according to the present invention;
FIG. 5 is a schematic diagram of a low-source voltage source circuit in the high-source power supply under test according to the present invention;
FIG. 6 is a schematic diagram of a low-source current source circuit in a high-source power supply under test according to the present invention;
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and 2, the present invention provides a technical solution: a power supply and analog signal current and voltage control device for semiconductor test comprises a power supply module 1 and a power amplification module electrically connected with the power supply module;
the power supply module 1 is divided into a high-source power supply and a low-source power supply; the power module 1 is characterized in that an external 220V alternating current is connected with a rectifier bridge A2 through a transformer T, the rectifier bridge A2 is connected with a capacitor C9 and a capacitor C10, a thyristor Q12 and a thyristor Q13 are connected to the outside of the rectifier bridge A2, a ground wire is connected between the capacitor C9 and the capacitor C10, a comparator U7A, a resistor R32 and a resistor R34 which are connected in series with each other, a capacitor CF1 are connected between the outside of a thyristor Q12 and the ground wire, and the cathode of the comparator U7A is connected between the resistor R32 and the resistor R34;
a comparator U7B, a resistor R33 and a resistor R41 which are connected in series with each other, a capacitor CF2 are further connected between the outside of the thyristor Q13 and the ground wire, and the cathode of the comparator U7A is connected between the resistor R32 and the resistor R34;
in the using process, the external 220V alternating current is transformed by the transformer T, rectified into direct current by the rectifier bridge and filtered into constant voltage by the capacitor C9 and the capacitor C10.
Initially, the thyristor Q12 is not turned on, the output voltage is 0, the comparison is performed by the comparator U7A, the anode terminal is greater than 5V at this time, so the output voltage Q10 is turned on, the thyristor Q12 is also turned on, the voltage is output to the capacitor CF1 at this time, when the capacitor CF1 is fully charged, the voltage continues to rise, after the voltage is divided by the resistor R32 and the resistor R33, when the voltage is greater than 5V, the comparator U7B outputs a negative voltage, the Q10 is turned off, and the thyristor Q12 is also turned off.
The voltage stabilizing principle is that when the voltage is too low, the voltage between the resistor R32 and the resistor R34 is reduced, the output voltage of the comparator U7A is increased, the output voltage of the Q10 is increased, and the thyristor Q12 is connected, namely the voltage is increased;
when the voltage is too high, the voltage between the resistor R32 and the resistor R34 rises, the output voltage of the comparator U7A decreases, and the output voltage of the Q10 decreases, and the thyristor Q12 is turned off, i.e., the voltage decreases.
The output voltage can be controlled through the process, and the capacitor CF1 uses a large capacitor of 10mF as an energy storage device, so that large current can be released during the instant pulse test, and the test process of the semiconductor device is conveniently completed.
The power amplifier module comprises a bias amplification module 2, a middle-stage amplification module 3 and a power output amplification module 4, wherein the middle-stage amplification module 3 is provided with two parts which are respectively connected with the power module 1 and the bias amplification module 2 in parallel, and the power output amplification module 4 is provided with four parts which are respectively connected with the two middle-stage amplification modules 3 and the power module 1 in parallel.
The bias amplifying module 2 is composed of a transistor MJE340 and a transistor MJE350 which are connected in parallel, the intermediate amplifying module 3 is composed of a transistor MJE15030 and a transistor MJE15031 which are connected in parallel, and the power output amplifying module 4 is composed of a high-performance transistor MJE4343 and a high-performance transistor MJE4343 which are connected in parallel.
The power amplifier adopts a three-stage push-pull mode, a current signal sent by the operational amplifier of the power supply module 1 firstly pushes the transistor MJE340 of the bias amplification module 2, and if the current does not reach the opening current of the transistor MJE340, the three-stage amplification is completely cut off, and the operational amplifier directly outputs the current signal.
If the current reaches the on-current of the transistor MJE340, the bias amplifier module 2 is operated, the transistor MJE340 outputs a signal to the intermediate amplifier module 3, the transistor MJE15030 and the transistor MJE15031 of the intermediate amplifier module 3 are operated, and similarly, if the current does not reach the on-current of MJE15031, the intermediate amplifier module 3 is not operated, the transistor MJE340 amplifies the output, and so on, the transistors MJE4343 of the four power output amplifier modules 4 are finally driven to output the current, as shown in fig. 2:
in the figure, the triode of one bias amplification module 2 drives the triodes of two intermediate amplification modules 3, then drives four transistors MJE4343 of a power output amplification module 4, the stage amplification is realized, one power amplifier can be compatible with micro current and large current, the minimum current reaches 100nA, the maximum current can reach 50A, the precision and the reliability in the test process are improved, and the test efficiency is improved.
When the voltage source is high in the test process, a simplified schematic diagram is shown in FIG. 3; where R113 is R2116 and R175 is R176, the voltage applied across the device CE under test in fig. 3, i.e. VCE, is controlled by the input voltage Ui, and by adding a voltage of-10V to Ui, a voltage of-2000V to +2000V can be generated at CE, since U121 is a follower
Va＝VE
Since R176 is R175 and U129 is an inverter, it is also possible to provide a power supply circuit for a vehicle
Vd＝-VE
According to operational amplifier formula
Because R113 ═ R2116, brings into the above formula
The voltage applied to the tested device is determined by the control voltage Ui and linearly changes with the Ui, and in actual use, the voltage is divided into three gears which are 0-10V respectively; 0-100V; 0 to 2000V. The operation is good, and the loading voltage is accurate.
When a high-source current source is tested, a simplified schematic diagram is shown in FIG. 4;
the figure shows the flow of current through the device under test, i.e. the ICE. The ICE is controlled by the input voltage Ui. By applying a voltage of-10V to Ui, a maximum current of-1250A to +1250A can be generated at CE. Because R220 is in series with the device under test, the current flowing through R220 is equal to ICE.
Since U210 is a follower, it is not necessary to provide a signal to the follower
Vf＝VE
According to operational amplifier formula
IE and the current of the resistor R220 are
Brought into the above formula
As can be seen from the above formula, the current applied to the device under test is determined by the control voltage Ui and linearly changes with Ui, and in practical use, the current is divided into 11 gears, which are 0-1 uA respectively; 0-10 uA; 0-100 uA; 0-1 mA; 0-10 mA; 0-100 mA; 0-1A; 0-10A; 0 to 50A; 0 to 500A; 0-1250A, good operation and accurate loading voltage.
When the source voltage is low in the test process, a simplified schematic diagram is shown in fig. 5;
the figure is to load a voltage across the device under test GE, i.e., VGE. VGE is controlled by the input voltage Ui. By applying a voltage of-10V to Ui, a voltage of-20V to +20V can be generated at GE.
The analysis method is similar to a high-source voltage source, and the final formula is as follows:
it can be seen that the voltage applied to the device under test is determined by the control voltage Ui and varies linearly with Ui.
A simplified schematic diagram is shown in fig. 6 when a low-source current source is tested;
in the figure, a current to be loaded flows through a device to be tested, namely IGE, the IGE is controlled by an input voltage Ui, and a current ranging from-10A to +10A can be generated at GE by adding a voltage ranging from-10V to Ui;
the analysis method is similar to a high-source current source, and the final formula is
It can be seen that the current applied to the device under test is determined by the control voltage Ui and varies linearly with Ui.
In practical use, 8 gears are divided, and the gear number is 0-1 uA; 0-10 uA; 0-100 uA; 0-1 mA; 0-10 mA; 0-100 mA; 0-1A; 0-10A, good operation and accurate voltage loading.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A power supply and analog signal current-voltage control device for semiconductor testing is characterized in that: comprises a power supply module (1) and a power amplifier module electrically connected with the power supply module;
the power supply module (1) is divided into a high-source power supply and a low-source power supply;
the power amplifier module comprises a bias amplification module (2), a middle-stage amplification module (3) and a power output amplification module (4), wherein the middle-stage amplification module (3) is provided with two parts which are respectively connected with a power module (1) and the bias amplification module (2) in parallel, and the power output amplification module (4) is provided with four parts which are respectively connected with the two middle-stage amplification modules (3) and the power module (1) in parallel.
2. The power supply and analog signal current and voltage control device for semiconductor test as claimed in claim 1, wherein the power module (1) is externally connected with 220V ac power and is connected with a rectifier bridge a2 through a transformer T, the rectifier bridge a2 is connected with a capacitor C9 and a capacitor C10, a thyristor Q12 and a thyristor Q13 are connected with the rectifier bridge a2, and a ground line is connected between the capacitor C9 and the capacitor C10.
3. The power supply and analog signal current-voltage control device for semiconductor test according to claim 2, wherein a comparator U7A, a resistor R32 and a resistor R34 connected in series with each other, and a capacitor CF1 are further connected between the outside of the thyristor Q12 and the ground line, and the cathode of the comparator U7A is connected between the resistor R32 and the resistor R34;
a comparator U7B, a resistor R33 and a resistor R41 which are connected in series with each other, and a capacitor CF2 are connected between the outside of the thyristor Q13 and the ground line, and the cathode of the comparator U7A is connected between the resistor R32 and the resistor R34.
4. The power supply and analog signal current-voltage control device for semiconductor test according to claim 1, wherein the bias amplification module (2) is composed of a transistor MJE340 and a transistor MJE350 connected in parallel, and the intermediate amplification module (3) is composed of a transistor MJE15030 and a transistor MJE15031 connected in parallel.
5. The power supply and analog signal current-voltage control device for semiconductor test according to claim 1, wherein the power output amplifying module (4) is composed of a high performance transistor MJE4343 and a high performance transistor MJE4343 connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110150403.4A CN112904174A (en) | 2021-02-03 | 2021-02-03 | Power supply and analog signal current and voltage control device for semiconductor test |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110150403.4A CN112904174A (en) | 2021-02-03 | 2021-02-03 | Power supply and analog signal current and voltage control device for semiconductor test |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5389894A (en) * | 1992-09-03 | 1995-02-14 | Sgs-Thomson Microelectronics, Inc. | Power amplifier having high output voltage swing and high output drive current |
| CN101647197A (en) * | 2006-11-16 | 2010-02-10 | 恒星射频公司 | Pulse amplifier |
| CN101647198A (en) * | 2006-11-16 | 2010-02-10 | 恒星射频公司 | Distributed multi-stage amplifier |
| CN206226304U (en) * | 2016-11-30 | 2017-06-06 | 西安易恩电气科技有限公司 | A kind of high-power DC power supply device |
| CN109901039A (en) * | 2019-03-29 | 2019-06-18 | 国网上海市电力公司 | A kind of converter valve thyristor presses component test set and method |
| CN110441668A (en) * | 2019-08-19 | 2019-11-12 | 西安易恩电气科技有限公司 | A kind of high-power IGBT test macro |
-
2021
- 2021-02-03 CN CN202110150403.4A patent/CN112904174A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5389894A (en) * | 1992-09-03 | 1995-02-14 | Sgs-Thomson Microelectronics, Inc. | Power amplifier having high output voltage swing and high output drive current |
| CN101647197A (en) * | 2006-11-16 | 2010-02-10 | 恒星射频公司 | Pulse amplifier |
| CN101647198A (en) * | 2006-11-16 | 2010-02-10 | 恒星射频公司 | Distributed multi-stage amplifier |
| CN206226304U (en) * | 2016-11-30 | 2017-06-06 | 西安易恩电气科技有限公司 | A kind of high-power DC power supply device |
| CN109901039A (en) * | 2019-03-29 | 2019-06-18 | 国网上海市电力公司 | A kind of converter valve thyristor presses component test set and method |
| CN110441668A (en) * | 2019-08-19 | 2019-11-12 | 西安易恩电气科技有限公司 | A kind of high-power IGBT test macro |
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