CN112886846A - Hybrid clamp five-level voltage source type converter and control method - Google Patents
Hybrid clamp five-level voltage source type converter and control method Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
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Abstract
A hybrid clamp five-level voltage source type converter and a control method belong to the field of power electronic conversion devices. Comprising 4 capacitors, 4 terminals, 12 insulated gate bipolar transistors, and 2 diodes. The output voltage Vxo of the converter is triggered and controlled by a controller, the controller is a conventional trigger controller and controls an insulated gate bipolar transistor, and the control output voltages are Vdc, 3Vdc/4, Vdc/2, Vdc/4 and 0 respectively; vdc represents the dc bus voltage and defines the igbt on and off states, with 1 on and 0 off. The invention has the advantages that: all insulated gate bipolar transistors of the hybrid clamp five-level voltage source type converter bear equal voltage, and compared with a flying capacitor type five-level converter, the hybrid clamp five-level voltage source type converter uses less capacitors, so that the size of the device is reduced; compared with a diode clamping type five-level converter, the three-level converter has the capacity of balancing capacitor voltage, is simple in topological structure and easy to control, and is suitable for application occasions of medium-high voltage and high power.
Description
Background
In recent years, with the development of power electronic technology and control technology, power electronic devices have been widely used, and the power electronic devices have higher and higher capabilities of high power, high voltage resistance and low harmonic disturbance. The multi-level converter has the advantages of high power, low switching frequency, small output harmonic, high dynamic response speed, good electromagnetic compatibility and the like, can ensure that power electronic devices with low voltage withstanding values can be reliably applied to the high-voltage high-power field, and effectively reduces higher harmonics generated by Pulse Width Modulation (PWM) control. However, the conventional flying capacitor type five-level converter has inherent defects such as a large number of capacitors and imbalance between capacitor voltages of a diode clamp type five-level converter, and thus, popularization and application of a five-level converter in practice are inhibited.
In practical application, the five-level converter must also consider the factor of voltage sharing of the insulated gate bipolar transistor, and because the parasitic inductance and the parasitic capacitance of the insulated gate bipolar transistors of different models are different in the five-level converter, the voltages at two ends of the two insulated gate bipolar transistors of different models which are connected in series are different, and finally the insulated gate bipolar transistors of different models can be damaged, so the insulated gate bipolar transistors of different models cannot be used in series; meanwhile, when designing and installing, different types of insulated gate bipolar transistors can be different in size, so that the insulated gate bipolar transistors cannot be mixed in practical use.
Disclosure of Invention
In view of the problems in the prior art, the present invention provides a hybrid clamp five-level voltage source converter, which uses a small number of capacitors, does not have the problem of unbalanced capacitor voltages, and has the same withstand voltage for each insulated gate bipolar transistor.
In order to achieve the above object, the present hybrid clamp five-level voltage source converter includes a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a first terminal, a second terminal, a third terminal, a fourth terminal, an insulated gate bipolar transistor IGBT1, an IGBT2, an IGBT3, an IGBT4, an IGBT5, an IGBT6, an IGBT7, an IGBT8, an IGBT9, an IGBT10, an IGBT11, an IGBT12, and two diodes VD1, VD 2;
the first terminal and the capacitor C1 are connected to the collector of the insulated gate bipolar transistor IGBT 1;
the second terminal, the capacitor C1, the capacitor C2, and the emitter of the insulated gate bipolar transistor IGBT4 are connected to the collector of the insulated gate bipolar transistor IGBT 5;
the third terminal and IGBT capacitor C2 are connected to the emitter of insulated gate bipolar transistor IGBT 8;
the emitter of the insulated gate bipolar transistor IGBT1 and the collector of the insulated gate bipolar transistor IGBT2, and the emitter of the insulated gate bipolar transistor IGBT3 and the collector of the insulated gate bipolar transistor IGBT4 are connected to the two poles of the capacitor C3, respectively; the emitter of the insulated gate bipolar transistor IGBT5 and the collector of the insulated gate bipolar transistor IGBT6, and the emitter of the insulated gate bipolar transistor IGBT7 and the collector of the insulated gate bipolar transistor IGBT8 are connected to the two poles of the capacitor C4, respectively;
the collector of the insulated-gate bipolar transistor IGBT9 is connected to the emitter of the insulated-gate bipolar transistor IGBT2 and the collector of the insulated-gate bipolar transistor IGBT 3. The emitter of the insulated gate bipolar transistor IGBT12 is connected to the emitter of the insulated gate bipolar transistor IGBT6 and the collector of the insulated gate bipolar transistor IGBT 7;
the emitter of the insulated gate bipolar transistor IGBT10 is connected to the collector of the insulated gate bipolar transistor IGBT 11;
the cathode of the diode VD1 is connected to the emitter of the insulated gate bipolar transistor IGBT9 and the collector of the insulated gate bipolar transistor IGBT 10; the cathode of the diode VD2 is connected with the anode of the diode VD1 and a connecting terminal;
the cathode of the diode VD2 is connected to the emitter of the insulated gate bipolar transistor IGBT11 and the collector of the IGBT 12;
the control method of the converter is as follows:
the output voltage Vxo is triggered and controlled by a controller, wherein the controller is a conventional trigger controller and controls the insulated gate bipolar transistor, and the output voltages are respectively Vdc, 3Vdc/4, Vdc/2, Vdc/4 and 0; vdc represents the dc bus voltage and defines the igbt on and off states, with 1 on and 0 off.
When the converter output voltage is vdc, the number of converter output levels is 4, only 1 switching state A is needed at the time, the insulated gate bipolar transistors IGBT1, IGBT2, IGBT9 and IGBT10 are conducted, when the current is more than 0, the current flows out of the converter through the insulated gate bipolar transistors IGBT1, IGBT2, IGBT9 and IGBT10, and when the current is less than 0, the current flows into the converter through the body diodes connected in parallel between the emitter and collector of the insulated gate bipolar transistors IGBT1, IGBT2, IGBT9 and IGBT 10.
When the output voltage of the converter is 3V dc/4, the output level number of the converter is 3, and only 2 switch states B1-B2 exist: when the switching state is B1, the insulated gate bipolar transistors IGBT1, IGBT3, IGBT9, and IGBT10 are turned on, and when the current is greater than 0, the current flows out of the inverter through the body diodes of the insulated gate bipolar transistors IGBT1, IGBT9, IGBT10, and IGBT3, and when the current is less than 0, the current flows into the inverter through the body diodes of the insulated gate bipolar transistors IGBT1, IGBT9, IGBT10, and the insulated gate bipolar transistor IGBT3, and the current flows through the capacitor C3 at this time; when the switching state is B2, the insulated-gate bipolar transistors IGBT2, IGBT4, IGBT9, and IGBT10 are turned on, and when the current is greater than 0, the current flows out of the inverter through the insulated-gate bipolar transistors IGBT2, IGBT9, IGBT10, and the body diode of the insulated-gate bipolar transistor IGBT4, and when the current is less than 0, the current flows into the inverter through the body diode of the insulated-gate bipolar transistors IGBT2, IGBT9, IGBT10, and the insulated-gate bipolar transistor IGBT4, and at this time, the current flows through the capacitor C3.
When the output voltage of the converter is V dc/2, the output level number of the converter is 2, and only 2 switch states C1-C2 exist: when the switching state is C1, the insulated gate bipolar transistors IGBT10 and IGBT11 are turned on, and when the current is greater than 0, the current flows out of the inverter through the insulated gate bipolar transistor IGBT10 and the clamp diode VD9, and when the current is less than 0, the current flows into the inverter through the insulated gate bipolar transistor IGBT11 and the clamp diode VD10, and at this time, the current flows through the capacitor C1; when the switching state is C2, the insulated gate bipolar transistors IGBT1, IGBT4, IGBT5, IGBT7, IGBT11, and IGBT12 are turned on, and when the current is greater than 0, the current flows out of the converter through the insulated gate bipolar transistors IGBT1, IGBT4, IGBT5, and the body diodes of the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and when the current is less than 0, the current flows into the converter through the body diodes of the insulated gate bipolar transistors IGBT1, IGBT4, and IGBT5, and the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and the current flows through the capacitors C3 and C4.
When the output voltage of the converter is V dc/4, the output level number of the converter is 1, and only 2 switch states D1-D2 exist: when the switching state is D1, the insulated gate bipolar transistors IGBT5, IGBT7, IGBT11, and IGBT12 are turned on, and when the current is greater than 0, the current flows out of the inverter through the insulated gate bipolar transistor IGBT5 and the body diodes of the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and when the current is less than 0, the current flows into the inverter through the body diode of the insulated gate bipolar transistor IGBT5 and the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and at this time, the current flows through the capacitors C1 and C4; when the switching state is D2, the insulated gate bipolar transistors IGBT1, IGBT4, IGBT7, IGBT8, IGBT11, and IGBT12 are turned on, and when the current is greater than 0, the current flows out of the converter through the insulated gate bipolar transistors IGBT1, IGBT4, and the body diodes of the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11, and IGBT12, and when the current is less than 0, the current flows into the converter through the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11, IGBT12, and the body diodes of the insulated gate bipolar transistors IGBT1, and IGBT4, and the current flows through the capacitors C2 and C3.
When the converter output voltage is 0, the number of converter output levels is 0, only 1 switching state E is needed at this time, the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11 and IGBT12 are conducted, when the current is more than 0, the current flows out of the converter through body diodes of the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11 and IGBT12, and when the current is less than 0, the current flows into the converter through the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11 and IGBT 12.
Compared with the prior art, the voltages at the two ends of the two capacitors C1 and C2 of the hybrid clamping five-level voltage source type conversion device are 1/2 of the direct-current bus voltage respectively, the voltages at the two ends of the capacitors C3 and C4 are 1/4 of the direct-current bus voltage respectively, the voltage borne by each insulated gate bipolar transistor is 1/4 of the direct-current bus voltage, the withstand voltages borne by all the insulated gate bipolar transistors are the same, the insulated gate bipolar transistors of the same model can be selected during use, so that the type selection of the switch tube is very convenient, and the switch tube of the same model only needs to be selected; in addition, the packaging of all the switch tubes is the same, and the design and installation of the switch tubes are more convenient.
Drawings
Fig. 1 is a topology diagram of a hybrid clamped five level voltage source converter of the present invention;
FIG. 2a is a current loop diagram of a hybrid clamp five level voltage source converter of the present invention with switch state A;
fig. 2B is a current loop diagram of the hybrid clamp five-level voltage source converter of the present invention with the switch state B1;
fig. 2c is a current loop diagram of the hybrid clamp five level voltage source converter of the present invention with the switch state B2;
fig. 2d is a current loop diagram of the hybrid clamp five level voltage source converter of the present invention with the switch state C1;
fig. 2e is a current loop diagram of the hybrid clamp five level voltage source converter of the present invention with the switching state C2;
fig. 2f is a current loop diagram of the hybrid clamp five level voltage source converter of the present invention with the switching state D1;
fig. 2g is a current loop diagram of the hybrid clamp five level voltage source converter of the present invention with the switching state D2;
fig. 2h is a current loop diagram when the switching state of the hybrid clamp five-level voltage source converter of the present invention is E.
Detailed Description
The invention is described in detail below with reference to the drawings and the detailed description.
As shown in fig. 1, the hybrid clamp five-level voltage source converter includes a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a first terminal, a second terminal, a third terminal, a fourth terminal, an insulated gate bipolar transistor IGBT1, an IGBT2, an IGBT3, an IGBT4, an IGBT5, an IGBT6, an IGBT7, an IGBT8, an IGBT9, an IGBT10, an IGBT11, an IGBT12, and two diodes VD1, VD 2;
the first terminal and the capacitor C1 are connected to the collector of the insulated gate bipolar transistor IGBT 1;
the second terminal, the capacitor C1, the capacitor C2, and the emitter of the insulated gate bipolar transistor IGBT4 are connected to the collector of the insulated gate bipolar transistor IGBT 5;
the third terminal and IGBT capacitor C2 are connected to the emitter of insulated gate bipolar transistor IGBT 8;
the emitter of the insulated gate bipolar transistor IGBT1 and the collector of the insulated gate bipolar transistor IGBT2, and the emitter of the insulated gate bipolar transistor IGBT3 and the collector of the insulated gate bipolar transistor IGBT4 are connected to the two poles of the capacitor C3, respectively; the emitter of the insulated gate bipolar transistor IGBT5 and the collector of the insulated gate bipolar transistor IGBT6, and the emitter of the insulated gate bipolar transistor IGBT7 and the collector of the insulated gate bipolar transistor IGBT8 are connected to the two poles of the capacitor C4, respectively;
the collector of the insulated-gate bipolar transistor IGBT9 is connected to the emitter of the insulated-gate bipolar transistor IGBT2 and the collector of the insulated-gate bipolar transistor IGBT 3. The emitter of the insulated gate bipolar transistor IGBT12 is connected to the emitter of the insulated gate bipolar transistor IGBT6 and the collector of the insulated gate bipolar transistor IGBT 7;
the emitter of the insulated gate bipolar transistor IGBT10 is connected to the collector of the insulated gate bipolar transistor IGBT 11.
The cathode of the diode VD1 is connected to the emitter of the insulated gate bipolar transistor IGBT9 and the collector of the insulated gate bipolar transistor IGBT 10; the cathode of the diode VD2 is connected with the anode of the diode VD1 and a connecting terminal; the cathode of the diode VD2 is connected to the emitter of the insulated gate bipolar transistor IGBT11 and the collector of the IGBT 12;
the output of five level voltages can be realized by controlling the on and off of different insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, and IGBT 12.
In the specific implementation of the invention, the insulated gate bipolar transistors IGBT1, IGBT2, IGBT3, IGBT4, IGBT5, IGBT6, IGBT7, IGBT8, IGBT9, IGBT10, IGBT11, IGBT12, capacitor C3, capacitor C4, diode VD1, diode VD2, the driving board and the control board are integrated into a larger module.
The voltage between the first terminal 1 and the third terminal 3 is the dc bus voltage.
When the hybrid clamp five-level voltage source type converter provided by the invention operates stably, the voltages at the two ends of the capacitors C1 and C2 are required to be controlled to be 1/2 of the voltage of the direct-current bus respectively, and the voltages at the two ends of the capacitors C3 and C4 are required to be controlled to be 1/4 of the voltage of the direct-current bus respectively. When the voltages across the capacitors C1 and C2 are 1/2 of the dc bus voltage, respectively, and the voltages across the capacitors C3 and C4 are 1/4 of the dc bus voltage, respectively, the voltage borne by each igbt is 1/4 of the dc bus voltage. Therefore, all the insulated gate bipolar transistors in the invention bear the same withstand voltage, and the insulated gate bipolar transistors of the same type can be selected when in use.
Defining the switching state of the insulated gate bipolar transistor IGBT is shown as the following formula
The switching states of the converter are shown in the following table:
TABLE 1 switching states of the converters
The control method of the converter is as follows:
(1) when the output voltage of the converter is V dc;
the number of inverter output levels is 4, and only 1 switching state a is present, and the IGBT1, the IGBT2, the IGBT9, and the IGBT10 are turned on, and when the current is greater than 0, the current flows out of the inverter through the IGBT1, the IGBT2, the IGBT9, and the IGBT10, and when the current is less than 0, the current flows into the inverter through the body diode connected in parallel between the emitter and the collector of the IGBT1, the IGBT2, the IGBT9, the IGBT 10.
(2) When the output voltage of the converter is 3V dc/4;
the number of converter output levels is 3, and only 2 switch states B1-B2 are provided: when the switching state is B1, the insulated gate bipolar transistors IGBT1, IGBT3, IGBT9, and IGBT10 are turned on, and when the current is greater than 0, the current flows out of the inverter through the body diodes of the insulated gate bipolar transistors IGBT1, IGBT9, IGBT10, and IGBT3, and when the current is less than 0, the current flows into the inverter through the body diodes of the insulated gate bipolar transistors IGBT1, IGBT9, IGBT10, and the insulated gate bipolar transistor IGBT3, and the current flows through the capacitor C3 at this time; when the switching state is B2, the insulated-gate bipolar transistors IGBT2, IGBT4, IGBT9, and IGBT10 are turned on, and when the current is greater than 0, the current flows out of the inverter through the insulated-gate bipolar transistors IGBT2, IGBT9, IGBT10, and the body diode of the insulated-gate bipolar transistor IGBT4, and when the current is less than 0, the current flows into the inverter through the body diode of the insulated-gate bipolar transistors IGBT2, IGBT9, IGBT10, and the insulated-gate bipolar transistor IGBT4, and at this time, the current flows through the capacitor C3.
(3) When the output voltage of the converter is V dc/2;
when the output voltage of the converter is V dc/2, the output level number of the converter is 2, and only 2 switch states C1-C2 exist: when the switching state is C1, the insulated gate bipolar transistors IGBT10 and IGBT11 are turned on, and when the current is greater than 0, the current flows out of the inverter through the insulated gate bipolar transistor IGBT10 and the clamp diode VD9, and when the current is less than 0, the current flows into the inverter through the insulated gate bipolar transistor IGBT11 and the clamp diode VD10, and at this time, the current flows through the capacitor C1; when the switching state is C2, the insulated gate bipolar transistors IGBT1, IGBT4, IGBT5, IGBT7, IGBT11, and IGBT12 are turned on, and when the current is greater than 0, the current flows out of the converter through the insulated gate bipolar transistors IGBT1, IGBT4, IGBT5, and the body diodes of the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and when the current is less than 0, the current flows into the converter through the body diodes of the insulated gate bipolar transistors IGBT1, IGBT4, and IGBT5, and the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and the current flows through the capacitors C3 and C4.
(4) When the output voltage of the converter is V dc/4;
the number of the output levels of the converter is 1, and only 2 switch states D1-D2 are provided at the moment: when the switching state is D1, the insulated gate bipolar transistors IGBT5, IGBT7, IGBT11, and IGBT12 are turned on, and when the current is greater than 0, the current flows out of the inverter through the insulated gate bipolar transistor IGBT5 and the body diodes of the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and when the current is less than 0, the current flows into the inverter through the body diode of the insulated gate bipolar transistor IGBT5 and the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and at this time, the current flows through the capacitors C1 and C4; when the switching state is D2, the insulated gate bipolar transistors IGBT1, IGBT4, IGBT7, IGBT8, IGBT11, and IGBT12 are turned on, and when the current is greater than 0, the current flows out of the converter through the insulated gate bipolar transistors IGBT1, IGBT4, and the body diodes of the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11, and IGBT12, and when the current is less than 0, the current flows into the converter through the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11, IGBT12, and the body diodes of the insulated gate bipolar transistors IGBT1, and IGBT4, and the current flows through the capacitors C2 and C3.
(5) When the converter output voltage is 0;
the number of inverter output levels is 0, and only 1 switching state E is present, and the IGBT7, the IGBT8, the IGBT11, and the IGBT12 are turned on, and when the current is greater than 0, the current flows out of the inverter through body diodes of the IGBT7, the IGBT8, the IGBT11, and the IGBT12, and when the current is less than 0, the current flows into the inverter through the IGBT7, the IGBT8, the IGBT11, and the IGBT 12.
Claims (7)
1. A hybrid clamp five-level voltage source type converter is characterized by comprising a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a first terminal (1), a second terminal (2), a third terminal (3) and a fourth terminal (4), an insulated gate bipolar transistor IGBT1, an IGBT2, an IGBT3, an IGBT4, an IGBT5, an IGBT6, an IGBT7, an IGBT8, an IGBT9, an IGBT10, an IGBT11, an IGBT12 and two diodes VD1 and VD 2;
the first terminal (1) and the capacitor C1 are connected to the collector of an insulated gate bipolar transistor IGBT 1;
the second terminal (2), the capacitor C1, the capacitor C2 and the emitter of the insulated gate bipolar transistor IGBT4 are connected to the collector of the insulated gate bipolar transistor IGBT 5;
the third terminal (3) and the IGBT capacitor C2 are connected to the emitter of an insulated gate bipolar transistor IGBT 8;
the emitter of the insulated gate bipolar transistor IGBT1 and the collector of the insulated gate bipolar transistor IGBT2, and the emitter of the insulated gate bipolar transistor IGBT3 and the collector of the insulated gate bipolar transistor IGBT4 are connected to the two poles of the capacitor C3, respectively; the emitter of the insulated gate bipolar transistor IGBT5 and the collector of the insulated gate bipolar transistor IGBT6, and the emitter of the insulated gate bipolar transistor IGBT7 and the collector of the insulated gate bipolar transistor IGBT8 are connected to the two poles of the capacitor C4, respectively;
the collector of the insulated-gate bipolar transistor IGBT9 is connected to the emitter of the insulated-gate bipolar transistor IGBT2 and the collector of the insulated-gate bipolar transistor IGBT 3. The emitter of the insulated gate bipolar transistor IGBT12 is connected to the emitter of the insulated gate bipolar transistor IGBT6 and the collector of the insulated gate bipolar transistor IGBT 7;
the emitter of the insulated gate bipolar transistor IGBT10 is connected to the collector of the insulated gate bipolar transistor IGBT 11;
the cathode of the diode VD1 is connected to the emitter of the insulated gate bipolar transistor IGBT9 and the collector of the insulated gate bipolar transistor IGBT 10; the cathode of the diode VD2 is connected with the anode of the diode VD1 and the connecting terminal (2); the cathode of the diode VD2 is connected to the emitter of the insulated gate bipolar transistor IGBT11 and the collector of the IGBT 12.
2. A control method of a hybrid clamp five-level voltage source converter according to claim 1, characterized in that the output voltage Vxo is triggered and controlled by a controller, wherein the controller is a conventional trigger controller, and controls the insulated gate bipolar transistors to control the output voltages to be Vdc, 3Vdc/4, Vdc/2, Vdc/4 and 0; vdc represents the dc bus voltage and defines the igbt on and off states, with 1 on and 0 off.
3. The control method according to claim 2, characterized in that when the converter output voltage is vdc, the number of converter output levels is 4, when there are only 1 switching state a, the insulated gate bipolar transistors IGBT1, IGBT2, IGBT9, IGBT10 are on, when the current is greater than 0, the current flows out of the converter through insulated gate bipolar transistors IGBT1, IGBT2, IGBT9, IGBT10, and when the current is less than 0, the current flows into the converter through body diodes connected in parallel between the emitters and collectors of insulated gate bipolar transistors IGBT1, IGBT2, IGBT9, IGBT 10.
4. A control method according to claim 2, characterized in that when the converter output voltage is 3vdc/4, the number of converter output levels is 3, and there are only 2 switch states B1-B2: when the switching state is B1, the insulated gate bipolar transistors IGBT1, IGBT3, IGBT9, and IGBT10 are turned on, and when the current is greater than 0, the current flows out of the inverter through the body diodes of the insulated gate bipolar transistors IGBT1, IGBT9, IGBT10, and IGBT3, and when the current is less than 0, the current flows into the inverter through the body diodes of the insulated gate bipolar transistors IGBT1, IGBT9, IGBT10, and the insulated gate bipolar transistor IGBT3, and the current flows through the capacitor C3 at this time; when the switching state is B2, the insulated-gate bipolar transistors IGBT2, IGBT4, IGBT9, and IGBT10 are turned on, and when the current is greater than 0, the current flows out of the inverter through the insulated-gate bipolar transistors IGBT2, IGBT9, IGBT10, and the body diode of the insulated-gate bipolar transistor IGBT4, and when the current is less than 0, the current flows into the inverter through the body diode of the insulated-gate bipolar transistors IGBT2, IGBT9, IGBT10, and the insulated-gate bipolar transistor IGBT4, and at this time, the current flows through the capacitor C3.
5. The control method according to claim 2, characterized in that when the converter output voltage is vdc/2, the number of converter output levels is 2, and only 2 switch states C1-C2: when the switching state is C1, the insulated gate bipolar transistors IGBT10 and IGBT11 are turned on, and when the current is greater than 0, the current flows out of the inverter through the insulated gate bipolar transistor IGBT10 and the clamp diode VD9, and when the current is less than 0, the current flows into the inverter through the insulated gate bipolar transistor IGBT11 and the clamp diode VD10, and at this time, the current flows through the capacitor C1; when the switching state is C2, the insulated gate bipolar transistors IGBT1, IGBT4, IGBT5, IGBT7, IGBT11, and IGBT12 are turned on, and when the current is greater than 0, the current flows out of the converter through the insulated gate bipolar transistors IGBT1, IGBT4, IGBT5, and the body diodes of the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and when the current is less than 0, the current flows into the converter through the body diodes of the insulated gate bipolar transistors IGBT1, IGBT4, and IGBT5, and the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and the current flows through the capacitors C3 and C4.
6. The control method according to claim 2, characterized in that when the converter output voltage is vdc/4, the number of converter output levels is 1, and there are only 2 switch states D1-D2: when the switching state is D1, the insulated gate bipolar transistors IGBT5, IGBT7, IGBT11, and IGBT12 are turned on, and when the current is greater than 0, the current flows out of the inverter through the insulated gate bipolar transistor IGBT5 and the body diodes of the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and when the current is less than 0, the current flows into the inverter through the body diode of the insulated gate bipolar transistor IGBT5 and the insulated gate bipolar transistors IGBT7, IGBT11, and IGBT12, and at this time, the current flows through the capacitors C1 and C4; when the switching state is D2, the insulated gate bipolar transistors IGBT1, IGBT4, IGBT7, IGBT8, IGBT11, and IGBT12 are turned on, and when the current is greater than 0, the current flows out of the converter through the insulated gate bipolar transistors IGBT1, IGBT4, and the body diodes of the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11, and IGBT12, and when the current is less than 0, the current flows into the converter through the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11, IGBT12, and the body diodes of the insulated gate bipolar transistors IGBT1, and IGBT4, and the current flows through the capacitors C2 and C3.
7. The control method according to claim 2, characterized in that when the converter output voltage is 0, the number of converter output levels is 0, and there are only 1 switching states E at this time, the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11, IGBT12 are on, and when the current is greater than 0, the current flows out of the converter through the body diodes of the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11, IGBT12, and when the current is less than 0, the current flows into the converter through the insulated gate bipolar transistors IGBT7, IGBT8, IGBT11, IGBT 12.
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| CN202110215688.5A CN112886846B (en) | 2021-02-26 | 2021-02-26 | Hybrid clamping five-level voltage source type converter and control method |
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| CN202110215688.5A CN112886846B (en) | 2021-02-26 | 2021-02-26 | Hybrid clamping five-level voltage source type converter and control method |
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| CN114640253A (en) * | 2022-03-24 | 2022-06-17 | 苏州罗约科技有限公司 | Hybrid three-level flying capacitor Boost circuit |
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