CN112880414A - Roasting battery material inert atmosphere cooling device and application method thereof - Google Patents

Roasting battery material inert atmosphere cooling device and application method thereof Download PDF

Info

Publication number
CN112880414A
CN112880414A CN202110086821.1A CN202110086821A CN112880414A CN 112880414 A CN112880414 A CN 112880414A CN 202110086821 A CN202110086821 A CN 202110086821A CN 112880414 A CN112880414 A CN 112880414A
Authority
CN
China
Prior art keywords
semiconductor
cooling
heat
cold
battery material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202110086821.1A
Other languages
Chinese (zh)
Other versions
CN112880414B (en
Inventor
吴飞翔
杨凌志
薛智宸
于环宇
胡航
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central South University
Original Assignee
Central South University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central South University filed Critical Central South University
Priority to CN202110086821.1A priority Critical patent/CN112880414B/en
Publication of CN112880414A publication Critical patent/CN112880414A/en
Application granted granted Critical
Publication of CN112880414B publication Critical patent/CN112880414B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D15/00—Handling or treating discharged material; Supports or receiving chambers therefor
    • F27D15/02—Cooling
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B9/00—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point
    • F25B9/02—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point using Joule-Thompson effect; using vortex effect
    • F25B9/04—Compression machines, plants or systems, in which the refrigerant is air or other gas of low boiling point using Joule-Thompson effect; using vortex effect using vortex effect
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D17/00—Arrangements for using waste heat; Arrangements for using, or disposing of, waste gases
    • F27D17/004—Systems for reclaiming waste heat
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H02N11/002—Generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/25—Process efficiency

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Secondary Cells (AREA)
  • Battery Electrode And Active Subsutance (AREA)

Abstract

The invention discloses an inert atmosphere cooling device for a roasted battery material, which comprises an inert gas bottle, a vortex tube, an inert atmosphere cooling box, an inert gas storage bag, a semiconductor hot end heat-conducting ceramic plate and a semiconductor temperature difference power generation module. The invention also discloses an application method of the roasting battery material inert atmosphere cooling device, which is used for carrying out radiation-convection comprehensive heat exchange on the battery material in the cooling cavity, absorbing heat by using the semiconductor hot end heat-conducting ceramic plate and generating power by using the semiconductor temperature difference power generation module to provide power for fluid conveying in the roasting cooling system. The invention can effectively solve the problem that the final performance of the battery material is influenced by natural cooling of the battery material, so that the roasted battery material is rapidly cooled and cooled by comprehensive radiation-convection heat exchange in an inert atmosphere to improve the performance of the battery material, and the waste heat can be fully utilized.

Description

Roasting battery material inert atmosphere cooling device and application method thereof
Technical Field
The invention relates to the technical field of battery material preparation devices, in particular to a roasted battery material inert atmosphere cooling device and an application method thereof.
Background
The battery material preparation process usually needs a roasting step, and the morphology, crystal structure and electrochemical performance of the sintered product are usually greatly related to the sintering system and cooling system. Generally, the degree of crystallinity of the material can be improved by improving the supercooling degree through rapid cooling, and crystal grains are refined, so that the material has better electrochemical performance. Patent CN109148879A discloses a method for synthesizing a lithium-rich manganese-based positive electrode material by liquid nitrogen quenching, which indicates that the electrochemical performance of the material can be improved by increasing the cooling speed.
After the battery material is roasted, the battery material is difficult to be fully cooled in a short time due to overhigh roasting temperature, and the degree of crystallinity obtained by a sintered product is often not high enough due to low supercooling degree, so that the refinement of crystal grains is not facilitated, the transmission of lithium ions in the particles is influenced, and the multiplying power performance of the assembled battery is poor. At the present stage, the battery material is cooled by hooking the battery material out of a quartz tube by using iron wires and naturally cooling the battery material in the air or naturally cooling the battery material by introducing argon into a double-temperature-zone open type tube furnace. After the electrode material is taken out, the high-temperature electrode material placed in the air is easily oxidized by the air, so that the obtained electrode material is difficult to meet the requirements; the latter is naturally cooled in an argon atmosphere, but the cooling period is too long, so that the normal process and period of battery material preparation are affected, excessive argon resource waste is caused, products with fine crystal grains and high crystallinity cannot be obtained, and a large amount of heat converted from electric energy in the tube furnace is directly dissipated, so that the maximum utilization of energy is not facilitated.
Disclosure of Invention
The invention aims to solve the technical problem of overcoming the defects in the prior art and provides a roasted battery material inert atmosphere cooling device which can quickly cool and cool a roasted battery material in an inert atmosphere so as to improve the performance of the battery material and can fully utilize waste heat and an application method thereof.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
an inert atmosphere cooling device for a baked battery material, comprising:
an inert gas bottle for providing an inert gas;
the input end of the vortex tube is connected with the inert gas bottle, and the output end of the vortex tube comprises a vortex tube hot end and a vortex tube cold end;
the inert atmosphere cooling box is used for carrying out radiation-convection comprehensive heat exchange cooling on the battery material in a closed environment, a cooling cavity for placing the roasted battery material is arranged in the inert atmosphere cooling box, and the cold end of the vortex tube is communicated with the input end of the cooling cavity;
the hot end of the vortex tube and the output end of the cooling cavity are both communicated with the input end of the inert gas storage bag;
one side of the semiconductor hot end heat-conducting ceramic plate is arranged adjacent to the cooling cavity;
and the semiconductor temperature difference power generation module is arranged close to the other side of the semiconductor hot end heat-conducting ceramic plate.
Foretell calcination battery material inert atmosphere heat sink, it is preferred, calcination battery material inert atmosphere heat sink still includes water-cooling heat sink, water-cooling heat sink includes:
the water-cooling interlayer is arranged close to the outer side of the cooling cavity, and cooling water flows through the water-cooling interlayer;
the input end of the cooling water tank is communicated with the output end of the water-cooling interlayer, and the output end of the cooling water tank is communicated with the input end of the water-cooling interlayer;
and the heat conduction pipe is used for transferring the heat of the cooling water to the semiconductor hot end heat conduction ceramic plate, one end of the heat conduction pipe is arranged in the cooling water tank, and the other end of the heat conduction pipe is connected with the semiconductor hot end heat conduction ceramic plate.
Above-mentioned roasting battery material inert atmosphere heat sink, preferably, the inside of water-cooling intermediate layer is equipped with polylith cooling water flow baffle, and is adjacent cooling water flow baffle sets up in the past.
Preferably, a divergent nozzle is arranged between the cold end of the vortex tube and the input end of the cooling cavity, the end with the smaller diameter of the divergent nozzle is connected with the cold end of the vortex tube, and the end with the larger diameter of the divergent nozzle is connected with the input end of the cooling cavity.
In the above inert atmosphere cooling device for battery material roasting, preferably, a quartz tube shelf for placing a quartz tube to be cooled is fixed at the bottom of the cooling cavity, and a plurality of quartz tube shelf air holes are formed in the quartz tube shelf.
Above-mentioned roasting battery material inert atmosphere heat sink, preferably, semiconductor thermoelectric generation module includes:
one side of the semiconductor hot end metal plate is arranged close to the semiconductor hot end heat conducting ceramic plate;
one side of the n-type semiconductor is arranged close to the other side of the semiconductor hot-end metal plate;
one side of the p-type semiconductor is arranged close to the other side of the semiconductor hot-end metal plate, and the n-type semiconductor and the p-type semiconductor are arranged at intervals;
the insulating and heat-insulating filling layer is filled in the gap between the n-type semiconductor and the p-type semiconductor;
the semiconductor cold-end metal plate comprises a first semiconductor cold-end metal plate and a second semiconductor cold-end metal plate, the first semiconductor cold-end metal plate is abutted against one side of the n-type semiconductor, which is far away from the semiconductor hot-end metal plate, the second semiconductor cold-end metal plate is abutted against one side of the p-type semiconductor, which is far away from the semiconductor hot-end metal plate, and the first semiconductor cold-end metal plate and the second semiconductor cold-end metal plate are arranged at intervals;
the semiconductor cold end ceramic plate is arranged close to the other side of the semiconductor cold end metal plate;
the battery is connected with first semiconductor cold junction metal sheet and second semiconductor cold junction metal sheet respectively through semiconductor thermoelectric generation circuit, and is connected with on the battery and is used for right fluid among the heat sink carries out the load device who carries, and is concrete, and the load device that the fluid carried includes pump and/or air-blower.
Above-mentioned roasting battery material inert atmosphere heat sink, more preferably, semiconductor thermoelectric generation module includes:
a plurality of n-type semiconductors and a plurality of p-type semiconductors, wherein the n-type semiconductors and the p-type semiconductors are alternately arranged, and adjacent n-type semiconductors and p-type semiconductors are arranged at intervals;
the semiconductor hot end metal plates and the semiconductor cold end metal plates are respectively arranged at two sides of the n-type semiconductor and the p-type semiconductor, the adjacent n-type semiconductor and the adjacent p-type semiconductor form a semiconductor group, the semiconductor hot end metal plates at one side of the semiconductor group are connected, the semiconductor cold end metal plates at the other side of the semiconductor group are not connected, the semiconductor hot end metal plates at one side of the adjacent semiconductor group are not connected, the semiconductor cold end metal plates at the other side of the adjacent semiconductor group are connected, and the semiconductor hot end metal plates are arranged close to the semiconductor hot end heat conducting ceramic plate;
the semiconductor cold end ceramic plate is arranged close to the plurality of semiconductor cold end metal plates;
the insulating and heat-insulating filling layer is filled in the gap between the n-type semiconductor and the p-type semiconductor;
the storage battery is connected with the semiconductor hot end metal plates at two ends or the semiconductor cold end metal plates at two ends through the semiconductor temperature difference power generation circuit respectively, a load device used for conveying the fluid in the cooling device is connected onto the storage battery, and specifically, the load device used for conveying the fluid comprises a pump and/or an air blower.
The above inert atmosphere cooling device for the roasted battery material is preferable, the inert atmosphere cooling box comprises a box body and a box cover which can be connected in a sealing mode, the cooling cavity is formed in the box body, the semiconductor hot end heat conducting ceramic plate is arranged on the box cover, and the inner wall surface of the box body and the bottom surface of the box cover are both provided with heat radiation absorption layers.
As a general technical concept, the invention also discloses an application method of the inert atmosphere cooling device for the battery material, the battery material after being roasted is placed in a cooling cavity of the inert atmosphere cooling box, the inert gas bottle is opened, the inert gas passes through the vortex tube and then is divided into two parts, namely cold gas flow and hot gas flow, wherein the cold gas flows through the cold end of the vortex tube and enters the cooling cavity, the cold gas is discharged from the output end of the cooling cavity after being subjected to heat convection with the battery material and then enters the inert gas storage bag for storage, the hot gas flows through the hot end of the vortex tube and directly enters the inert gas storage bag for storage, and the semiconductor hot end heat-conducting ceramic plate absorbs the heat of the thermal radiation of the battery material in the cooling cavity and utilizes the semiconductor temperature difference power generation module to generate power so as to.
In the application method, preferably, the cooling water in the water-cooling interlayer exchanges heat with the cooling cavity and then flows into the cooling water tank, the heat pipe transfers the heat of the cooling water to the semiconductor hot-end heat-conducting ceramic plate, and the semiconductor thermoelectric power generation module is used for generating power to provide power for fluid transportation in the cooling device.
Compared with the prior art, the invention has the advantages that:
1. the battery material is cooled in a radiation-convection comprehensive heat exchange mode, the heat transfer coefficient is high, the cooling speed of the battery material is high, the efficiency is high, the supercooling degree is high, meanwhile, the battery material is cooled in an inert atmosphere, the battery material is prevented from being oxidized in the cooling process, the property of the battery material cannot be influenced, and the final performance of the battery material is improved.
2. The battery material after roasting can be used for preheating the inert gas in the inert gas bottle, the utilization rate of the part of heat is improved through the vortex tube, the cooling effect and the inert gas preheating effect of the battery material are enhanced, meanwhile, the preheated inert gas can be used in other environments needing heating, the energy input in the next round of battery material roasting process is reduced, the energy is saved, the energy utilization rate is high, and meanwhile, the inert gas resource is effectively recycled and utilized.
3. The invention has comprehensive overall functions and compact and reasonable structure, can fully utilize waste heat in the roasting process of the battery material to meet the functions of cooling, waste heat recovery, thermoelectric generation, shielding gas preheating and the like of the battery material, can be used for power consumption equipment through the thermoelectric generation, such as energy required by fluid delivery, does not need to be added with energy for the equipment, and can fully utilize the recovered energy to operate.
Drawings
Fig. 1 is a schematic structural diagram of a battery material roasting and cooling system in an inert atmosphere in example 1.
FIG. 2 is a schematic view showing the structure of an inert atmosphere cooling box in example 1.
Fig. 3 is a schematic perspective view of the water-cooled temperature-reducing interlayer in example 1.
Fig. 4 is a front view of the water-cooled temperature-reducing interlayer in example 1.
Fig. 5 is a top view of the water-cooled temperature-reducing interlayer in example 1.
FIG. 6 is a schematic view showing the structure of a quartz tube in example 1.
FIG. 7 is a schematic view of the structure of the semiconductor thermoelectric power generation device in embodiment 1.
FIG. 8 is a schematic view of the structure of a semiconductor thermoelectric power generation device in example 2.
Illustration of the drawings:
1-an inert gas bottle, 2-an inert gas bottle mouth control valve, 3-an inert gas bottle airflow pipeline, 4-an inert gas bottle airflow pipeline movable threaded interface, 5-an inert gas bottle external pipeline, 6-a vortex tube air inlet pipeline flow regulating valve, 7-a vortex tube hot end, 8-a vortex tube hot end external pipeline threaded interface, 9-a vortex tube air inlet pipeline, 10-a cooling cavity, 11-a vortex tube cold end, 12-a vortex tube cold end external pipeline threaded interface, 13-a divergent nozzle, 14-a cooling cavity low-temperature argon air inlet pipeline, 15-a water cooling interlayer, 16-a water cooling interlayer high-temperature cooling water outlet pipeline control valve, 17-a water cooling interlayer high-temperature cooling water outlet, 18-a water cooling interlayer high-temperature cooling water outlet pipeline, 19-a front protection valve of a small cooling water pump, 20-a small cooling water pump, 21-a rear protection valve of the small cooling water pump, 22-an external threaded interface of a divergent nozzle pipe, 23-a flow regulating valve of a low-temperature argon gas inlet pipeline of a cooling cavity, 24-an upper and lower connecting part, 25-a vortex tube, 26-a threaded interface of an outlet pipeline of a heat-conducting oil cavity, 27-an outlet pipeline of the heat-conducting oil cavity, 28-an outlet pipeline control valve of the heat-conducting oil cavity, 29-an outlet of the heat-conducting oil cavity, 30-an external pipeline of the outlet pipeline of the heat-conducting oil cavity, 31-a heat-conducting oil cavity, 32-a heat-conducting ceramic plate at a semiconductor hot end, 33-an external pipeline at a hot end of the vortex tube, 34-a cold end of the heat, 38-a heat-conducting oil pump rear protective valve, 39-a vortex tube hot end external pipeline control valve, 40-an inert gas storage bag first gas inlet pipeline, 41-an inert gas storage bag first gas inlet pipeline inlet, 42-an inert gas storage bag, 43-an inert gas storage bag second gas inlet pipeline, 44-an inert gas storage bag second gas inlet pipeline control valve, 45-an inert gas storage bag second gas inlet pipeline inlet, 46-an inert gas storage bag gas outlet pipeline outlet, 47-an inert gas storage bag gas outlet pipeline, 48-an inert gas storage bag gas outlet pipeline control valve, 49-a small blower gas inlet pipeline, 50-a small blower, 51-a small blower gas outlet pipeline, 52-a small blower gas outlet pipeline adjusting valve, 53-main argon gas transmission and distribution pipeline of a double-temperature-zone open-type tubular furnace, 54-crack gas outlet, 55-threaded interface of a pipeline at the inlet of a spiral heat exchange tube, 56-control valve of the pipeline at the inlet of the spiral heat exchange tube, 57-inlet of the spiral heat exchange tube, 58-heat exchange tube, 59-threaded interface of a pipeline at the inlet of a heat-conducting oil chamber, 60-external pipeline at the outlet of the spiral heat exchange tube, 61-threaded interface of the external pipeline at the outlet of the spiral heat exchange tube, 62-control valve of the pipeline at the outlet of the spiral heat exchange tube, 63-outlet of the spiral heat exchange tube, 64-inlet of the heat-conducting oil chamber, 65-inlet of the heat-conducting oil chamber, 66-control valve of the pipeline at the inlet of the heat-, 72-cooling water tank outlet, 73-cooling water tank outlet pipeline control valve, 74-cooling water tank outlet pipeline, 75-heat pipe hot end, 76-cooling water tank inlet pipeline, 77-cooling water tank inlet pipeline control valve, 78-cooling cavity high-temperature argon gas outlet pipeline, 79-cooling cavity high-temperature argon gas outlet pipeline control valve, 80-water-cooling interlayer low-temperature cooling water inlet, 81-water-cooling interlayer low-temperature cooling water inlet pipeline, 82-box cover interlayer heat preservation and insulation material, 83-box body, 84-box cover, 85-inert atmosphere cooling box, 86-quartz tube shelf, 87-quartz tube shelf air hole, 88-cooling water flow partition, 89-insulation filling layer, 90-semiconductor hot end metal plate, 91-n type semiconductor, 92-p type semiconductor, 93-small heat conduction oil pump power-on circuit switch, 94-crucible for battery material roasting, 95-storage battery, 96-small cooling water pump power-on circuit switch, 97-heat conduction oil pump power-on circuit, 98-quartz tube, 99-semiconductor thermoelectric power generation circuit switch, 100-voltage stabilizer, 101-semiconductor cold end ceramic plate, 102-semiconductor cold end metal plate, 103-semiconductor thermoelectric power generation circuit, 104-small blower power-on circuit switch, 105-small cooling water pump power-on circuit, 106-small brushless blower motor, 107-small blower power-on circuit, 108-battery material, 109-cooling water tank.
Detailed Description
In order to facilitate understanding of the invention, the invention will be described more fully and in detail with reference to the accompanying drawings and preferred embodiments, but the scope of the invention is not limited to the specific embodiments below.
Example 1:
referring to fig. 1, a battery material roasting and cooling system under an inert atmosphere is shown, and the roasting and cooling system comprises a battery material roasting device and a battery material inert atmosphere cooling device.
The battery material roasting device comprises a tube furnace 69 for roasting the battery material 108, an internal roasting area 68 is arranged in the tube furnace 69, and specifically, the tube furnace 69 is a double-temperature-area open-type tube furnace.
The battery material inert atmosphere cooling device mainly comprises a radiation-convection comprehensive cooling and heat recovery device, a semiconductor module temperature difference power generation device and an argon preheating and recycling device.
The radiation-convection comprehensive cooling and heat recovery device mainly comprises a vortex tube cold end 11, a cooling cavity 10, a water-cooling interlayer 15, a small cooling water pump 20, a heat-conducting oil cavity 31, a small heat-conducting oil pump 37, a heat-conducting pipe 58, a spiral heat exchange pipe 67, an inert atmosphere cooling box 85, a quartz tube shelf 86, quartz tube shelf air holes 87, a cooling water flow partition plate 88, a cooling water tank 109, and auxiliary pipelines and valves thereof. The method has the main functions of rapidly cooling the battery material 108 roasted in the tube-type furnace 69, preventing the battery material from being affected by local oxidation, and simultaneously recovering the high-temperature battery material 108, the crucible 94 for roasting the battery material, the quartz tube 98 and the high-level heat source of the roasting area 68 in the double-temperature-zone open-type tube furnace to drive the subsequent semiconductor temperature difference power generation device to operate.
After the battery material 108 is roasted, the temperature inside the tube furnace 69, the surface temperature of the quartz tube 98 and the battery material 108 reach about 1000 ℃, and the heat dissipation capacity of the radiation heat exchange in the high-temperature area is in direct proportion to the fourth power of the temperature, so that the battery material 108 is quickly cooled by absorbing a large amount of sensible heat by using a high-absorption-rate radiation plate and matching with the direct convection heat exchange of air flow, the heat exchange coefficient can be obviously increased, the heat exchange capacity is enhanced, a large amount of heat is quickly dissipated from the battery material 108, the surface temperature of the battery material is reduced, and the subsequent assembly of the battery material 108 and the roasting link of the battery material 108 in the next batch are. Meanwhile, the radiation plate can carry a large amount of heat, the heat can be supplied to the hot end of a subsequent semiconductor thermoelectric generation link for use, the temperature of the argon flow after temperature rise is high, the argon flow can be stored and supplied to the next battery material roasting process to serve as protective gas, the input of extra cold materials is reduced, and energy is saved.
The argon preheating and recycling device mainly comprises an inert gas bottle 1, a vortex tube hot end 7, a cooling cavity 10, a vortex tube cold end 11, an inert gas storage bag 42, a small blower 50, a crack gas outlet 54, and auxiliary pipelines and valves thereof. The method has the main effects that when the protective gas in the battery material cooling process is formed by using argon, the battery material is cooled, the argon absorbs certain heat to raise the temperature, and the argon is continuously used in the following battery material roasting process, so that the energy can be saved and a better local protection effect can be formed.
The vortex tube 25 is operated with compressed gas expanding in the nozzle and then entering the vortex tube 25 tangentially at a high velocity. When the airflow rotates at a high speed in the vortex tube 25, the airflow is separated into two parts of airflow with unequal total temperature after vortex conversion, the temperature of the airflow at the central part is low, the temperature of the airflow at the outer part is high, and the ratio of cold flow to hot flow is adjusted, so that the optimal refrigeration effect or heating effect can be obtained. In the step of cooling the battery material, the cold air generated by the vortex tube 25 is rapid, the flow and the temperature of the cold air can be rapidly adjusted through the valve, a large amount of argon rich in cold energy can be provided for the cooling process of the battery material, and the cooling process of the battery material is greatly accelerated. Meanwhile, the hot end 7 of the vortex tube can also generate a part of argon flow with higher temperature and containing a large amount of heat, and the argon flow can be subsequently supplied to the battery material roasting process of the next batch to serve as protective gas, so that the input of cold materials is reduced, and the loss of heat can be reduced.
The semiconductor thermoelectric power generation device mainly comprises a semiconductor hot end heat conduction ceramic plate 32 and a semiconductor thermoelectric power generation module 35, wherein the semiconductor thermoelectric power generation module 35 comprises an insulating and heat-insulating filling layer 89, a semiconductor hot end metal plate 90, an n-type semiconductor 91, a p-type semiconductor 92, a storage battery 95, a voltage stabilizer 100, a semiconductor cold end ceramic plate 101, a semiconductor cold end metal plate 102, and an attached switch, a power line and the like. The main function of the device is to utilize the heat recovered by the radiation-convection comprehensive cooling and heat recovery device, obtain partial electric energy by means of the thermoelectric generation effect of the semiconductor, drive the subsequent operation of the small cooling water pump 20, the small heat conduction oil pump 37 and the small blower 50, and simultaneously complete the cooling task of the electrode material more quickly.
The semiconductor thermoelectric power generation device does not use an external power supply, quickly cools the roasted battery material 108, ensures that the battery material 108 is not oxidized and deteriorated under the high-temperature condition, accelerates the experiment progress, saves time, is mainly realized by the semiconductor Seebeck effect of the device, has larger thermoelectric force of a semiconductor, and can be used as a thermoelectric generator. The concentration of hot end holes of the p-type semiconductor 92 is high, the holes diffuse from the high temperature end to the low temperature end, under the condition of a passage, space charges (negative charges at the hot end and positive charges at the cold end) are formed at the two ends of the p-type semiconductor 92, an electric field appears in the semiconductor, when the diffusion effect and the drift effect of the electric field are mutually offset, a stable state is reached, and electromotive force, namely temperature difference electromotive force, caused by temperature gradient appears at the two ends of the semiconductor. The direction of the thermoelectromotive force of the p-type semiconductor 92 is from a low-temperature end to a high-temperature end (the Seebeck coefficient is negative), and conversely, the direction of the thermoelectromotive force of the n-type semiconductor 91 is from a high-temperature end to a low-temperature end (the Seebeck coefficient is positive), so that an electric field exists in the semiconductor with temperature difference, the Seebeck coefficient of a common semiconductor is hundreds of mV/K, and therefore, in the occasion with large temperature difference, the electric energy requirement for driving a small heat conduction oil pump, a small cooling water pump and a small blower can be completely met by utilizing the generated energy of the semiconductor temperature difference, and the purpose of cooling the battery material 108 after.
Specifically, the connection relationship and the function of each component are as follows:
the inert gas bottle 1 in this embodiment is used for providing inert gas, specifically, its interior contains low-temperature high-pressure compressed argon, which is a commonly used shielding gas in the roasting process in the battery material 108 preparation process, when in use, the inert gas bottle opening control valve 2 is opened, argon gas flow can finally be introduced into the quartz tube 98 in the tube furnace 69 through related pipelines, and the original air in the quartz tube 98 is expelled, so as to form the shielding gas in the roasting process of the battery material 108.
The vortex tube 25, the input of vortex tube 25 links to each other with inert gas bottle 1, the output of vortex tube 25 includes vortex tube hot junction 7 and vortex tube cold junction 11, concretely, vortex tube inlet line 9 of vortex tube 25 passes through inert gas bottle external pipeline 5 and inert gas bottle air flow pipeline 3 and links to each other with inert gas bottle 1, its vortex tube hot junction 7 passes through vortex tube hot junction external pipeline 33 and links to each other with inert gas storage package first inlet line 40, for inert gas storage package 42 fills the higher argon gas of temperature, vortex tube cold junction 11 passes through divergent nozzle 13 and links to each other with cooling chamber low temperature argon gas inlet line 14, provide the lower argon gas of temperature for cooling chamber 10.
The inert atmosphere cooling box 85 is used for carrying out radiation-convection comprehensive heat exchange cooling on battery materials 108 in a closed environment, a cooling cavity 10 for placing the battery materials 108 after roasting is arranged in the inert atmosphere cooling box 85, a cold end 11 of a vortex tube is communicated with an input end of the cooling cavity 10, the inert atmosphere cooling box 85 comprises a box body 83 and a box cover 84 which are connected in a sealing mode, the connecting position between the box body 83 and the box cover 84 is an upper connecting portion 24 and a lower connecting portion 24, the requirement for the upper connecting portion 24 and the lower connecting portion 24 is that when the box body is closed, the interior cannot leak air, the box body 83 and the box cover 84 can be completely coupled, no external air enters, the box body is a pure closed box body, and the cooling cavity 10 is located inside the inert atmosphere cooling box.
The output ends of the vortex tube hot end 7 and the cooling cavity 10 are communicated with the input end of the inert gas storage bag 42, and the output end of the inert gas storage bag 42 is communicated with the inner roasting area 68 of the tube furnace 69, specifically, the inert gas storage bag 42 is provided with two high-temperature argon gas inlet pipelines, namely an inert gas storage bag first inlet pipeline 40 and an inert gas storage bag second inlet pipeline 43, which are used for respectively storing argon gas with higher temperature from the vortex tube hot end 7 and the cooling cavity 10; and these high temperature argon gases are released through the inert gas storage bag outlet pipe 47 to serve as a shielding gas during firing of the next batch of cell material 108. The inert gas storage bag 42 is required to be wrapped by a heat insulating material on the outer wall surface, and meanwhile, the material has certain plasticity and can store enough argon gas with higher temperature. The inert gas storage bag first gas inlet pipe 40 is connected to the inert gas storage bag first gas inlet pipe inlet 41, the inert gas storage bag second gas inlet pipe 43 is connected to the inert gas storage bag second gas inlet pipe inlet 45, and the inert gas storage bag gas outlet pipe 47 is connected to the inert gas storage bag gas outlet pipe outlet 46.
One side of the semiconductor hot end heat-conducting ceramic plate 32 is arranged adjacent to the cooling cavity 10, and specifically, the semiconductor hot end heat-conducting ceramic plate 32 is positioned inside the box cover 84 and is in a reverse T shape, the lower part area is larger, and the upper part area is slightly smaller; the surface of the lower part of the semiconductor hot end heat conducting ceramic plate 32 facing the cooling cavity 10 is covered with a radiation high-absorptivity material as a thermal radiation absorption layer, so that the absorption of radiation heat of the quartz tube 98 and the battery material 108 can be further strengthened, the temperature of the semiconductor hot end heat conducting ceramic plate is increased, and a larger temperature difference of semiconductor thermoelectric power generation is formed; the upper peripheral area of the semiconductor hot end heat conducting ceramic plate 32 is a heat conducting oil chamber 31, and a heat conducting pipe 58 is nested inside the heat conducting oil chamber. The upper face of which abuts against the semiconductor hot-end metal plate 90. The semiconductor hot end heat conducting ceramic plate 32 collects the high temperature heat carried away by the heat conducting oil in the internal roasting area 68 of the battery material of the double-temperature-area open type tubular furnace, and the heat carried away by the cooling water of the quartz tube 98 and the battery material 108 in the cooling cavity 10 and directly obtained by radiation from the lower part of the semiconductor hot end heat conducting ceramic plate 32.
And a tube furnace waste heat transfer mechanism for transferring the waste heat transfer of the inner baking zone 68 of the tube furnace 69 to the semiconductor hot end heat-conducting ceramic plate 32. Specifically, the tube furnace waste heat transfer mechanism comprises a spiral heat exchange tube 67, the spiral heat exchange tube 67 can be inserted into an internal roasting area 68 of the tube furnace 69, heat conduction oil flows through the spiral heat exchange tube 67, a heat conduction oil cavity 31 is formed beside a semiconductor hot end heat conduction ceramic plate 32, and the input end and the output end of the spiral heat exchange tube 67 are communicated with the heat conduction oil cavity 31. The heat conducting oil flows into the spiral heat exchange tube 67 from the heat conducting oil chamber 31, absorbs the waste heat of the inner roasting area 68 in the process of flowing through the spiral heat exchange tube 67, and then returns to the heat conducting oil chamber 31 to transfer the heat to the semiconductor hot end heat conducting ceramic plate 32, so that the waste heat recovery of the inner roasting area 68 is realized through the circulation of the heat conducting oil. The spiral heat exchange tube 67 can be well coupled with the inner roasting area 68 of the tube furnace 69, heat conducting oil circulates inside the tube furnace, the material is copper tubes, a large amount of heat inside the inner roasting area 68 of the double-temperature-area open-type tube furnace can be rapidly recovered through dividing wall type heat exchange, and after the roasting of the battery material 108 is finished, the quartz tube 98 is taken out and directly inserted into the inner roasting area 68 of the tube furnace 69 to perform heat recovery. The spiral heat exchange tube 67 is provided with a spiral heat exchange tube inlet 57 and a spiral heat exchange tube outlet 63.
Further, spiral heat exchange tube 67 includes spiral section and the straightway of intercommunication each other, and the spiral section spirals along the inner wall of the inside calcination district 68 of tube furnace 69 and extends, and the straightway turns back and passes the spiral hollow portion setting of spiral section, and the open end of spiral section is spiral heat exchange tube 67's input, and the open end of straightway is spiral heat exchange tube 67's output. The structure of the spiral heat exchange tube 67 is matched with the heat distribution of the inner roasting area 68 of the tube furnace 69, the length is prolonged by adopting a mode of combining a spiral section and a straight line section, the heat recovery is more favorably, quickly and efficiently, and the waste heat recovery efficiency is improved.
More specifically, the heat conducting oil chamber 31 is located inside the box cover 84, between the box cover interlayer heat insulating material 82 and the semiconductor hot end heat conducting ceramic plate 32, and surrounds the periphery of the upper partial area of the semiconductor hot end heat conducting ceramic plate 32, and mainly has the function of recovering high-temperature heat from the baking area 68 inside the tube furnace 69 and transferring the high-temperature heat to the semiconductor hot end heat conducting ceramic plate 32, so that a larger temperature difference is formed between the cold end and the hot end of the semiconductor thermoelectric power generation device, and more electric energy is produced. The heat conduction oil chamber 31 is provided with a heat conduction oil chamber inlet 64 and a heat conduction oil chamber outlet 29, the heat conduction oil chamber inlet 64 being connected to the heat conduction oil chamber inlet conduit 65, and the heat conduction oil chamber outlet 29 being connected to the heat conduction oil chamber outlet conduit 27.
In this embodiment, a crack gas outlet 54 for guiding the gas flow to the inner wall surface of the inner baking region 68 is provided at the joint of the inert gas storage bag 42 and the tube furnace 69, the crack gas outlet 54 includes a main pipe section and an annular diverging section which are communicated with each other, the main pipe section is connected to the output end of the inert gas storage bag 42, and the annular diverging section is matched with the inner wall of the inner baking region 68 and connected to the input end of the tube furnace 69. Specifically, after the battery material 108 in the current batch is cooled, the main argon gas transmission and distribution pipeline 53 of the dual-temperature-zone open-type tube furnace needs to be connected to one side of the quartz tube 98 of the tube furnace 69 before the next batch of battery material 108 is roasted, and the contact is complete, so that no gas leakage is ensured; meanwhile, argon gas flow with higher temperature is distributed through the crack gas outlet 54, the crack gas outlet 54 is an outer edge crack gas flow outlet, and the gas flow direction is close to the wall surface of the quartz tube 98, so that the inner temperature of the quartz tube 98 can be more uniform, the central gas flow is guaranteed to be converged to the edge, and the temperature distribution is more uniform.
In this embodiment, the heat exchanger further comprises a water-cooling heat sink, wherein the water-cooling heat sink comprises a water-cooling interlayer 15, a cooling water tank 109 and a heat pipe 58.
The water-cooling interlayer 15 is tightly attached to the outer side of the cooling cavity 10, cooling water flows in the water-cooling interlayer 15, specifically, the water-cooling interlayer 15 is arranged on the periphery of the cooling cavity 10 and specifically located in the interlayer between the cooling cavity 10 and the wall surface of the box body 85, the cooling water flows inside, internal media of the cooling cavity 10 and the surrounding water-cooling interlayer 15 cannot contact with each other, and low-temperature argon gas flow from the cold end 11 of the vortex tube is arranged inside the cooling cavity 10. The water-cooling interlayer 15 is provided with a water-cooling interlayer high-temperature cooling water outlet 17 and a water-cooling interlayer low-temperature cooling water inlet 80.
As shown in fig. 3 to 5, in the present embodiment, a plurality of cooling water flow partition plates 88 are disposed inside the water-cooling temperature-reducing interlayer 15, and adjacent cooling water flow partition plates 88 are staggered. Specifically, the surface of the water-cooling temperature-reducing interlayer 15 facing the temperature-reducing cavity 10 is covered with a radiation high-absorptivity material as a thermal radiation absorption layer, so that the absorption of the radiation heat of the quartz tube 98 and the battery material 108 can be further enhanced, and the heat can be transferred to the cooling water inside; the staggered and spaced cooling water flow partition plates 88 can isolate water flow and reduce the flow rate of cooling water, so that the retention time of the cooling water in the water-cooling interlayer 15 is increased, and the water flow can fully absorb heat.
And the input end of the cooling water tank 109 is communicated with the output end of the water-cooling interlayer 15, and the output end of the cooling water tank 109 is communicated with the input end of the water-cooling interlayer 15. Specifically, the cold water tank 109 is provided with a cooling water tank inlet 71 and a cooling water tank outlet 72.
And a heat pipe 58 for transferring heat of the cooling water to the semiconductor hot side heat conductive ceramic plate 32, wherein one end of the heat pipe 58 is disposed in the cooling water tank 109, and the other end of the heat pipe 58 is connected to the semiconductor hot side heat conductive ceramic plate 32. The heat pipe hot end 75 of the heat pipe 58 is located in the cooling water tank 109, is in direct contact with the cooling water with higher temperature in the cooling water tank 109, and absorbs the heat of the high-temperature cooling water, and the heat pipe cold end 34 of the heat pipe 58 is embedded in the semiconductor hot end heat conducting ceramic plate 32 to release the heat of the high-temperature cooling water to the semiconductor hot end heat conducting ceramic plate 32.
In this embodiment, be equipped with divergent spray tube 13 between vortex tube cold junction 11 and the input of cooling chamber 10, the less one end of divergent spray tube 13 pipe diameter links to each other with vortex tube cold junction 11, the great one end of divergent spray tube 13 pipe diameter links to each other with the input of cooling chamber 10, and is concrete, the one end of divergent spray tube 13 links to each other with vortex tube cold junction 11, and the other end links to each other with cooling chamber low temperature argon gas admission line 14, and the main effect is through the divergent section, reduces the low temperature argon gas air velocity that comes from vortex tube cold junction 11, thereby make the low temperature argon gas air current longer in the inside dwell time that cools down chamber 10 inside, can fully absorb the heat that comes from quartz capsule 98 and battery material 108, rise self temperature, store certain heat, be convenient for the jetting flow of the higher argon gas flow of subsequent.
As shown in fig. 2 and 6, in the present embodiment, a quartz tube shelf 86 for placing a quartz tube 98 to be cooled is fixed at the bottom of the cooling chamber 10, and a plurality of quartz tube shelf air holes 87 are formed in the quartz tube shelf 86. The quartz tube shelf 86 is located inside the cooling chamber 10 and mainly functions to place the high-temperature quartz tube 98 from the inside of the tube furnace 69, so as to cool the high-temperature quartz tube 98 and the battery material 108 inside the high-temperature quartz tube 98. The quartz tube shelf 86 is flexible and has an edge facing the quartz tube 98. the material of the shelf is preferably copper, and the shelf has a plurality of quartz tube shelf air holes 87 therein to facilitate the passage of air flow and improve heat transfer efficiency.
In order to enable the cooling water and the heat conduction oil to flow normally, a small cooling water pump 20 is arranged on a pipeline through which the cooling water flows, a small heat conduction oil pump 37 is arranged on the pipeline through which the heat conduction oil flows, the power of the small heat conduction oil pump 37 and the power of the small cooling water pump 20 are small, the main effect is that the heat conduction oil and the cooling water have certain flow velocity inside a pipeline, but the flow velocity is not required to be too fast, so that the power demand is small, and the semiconductor temperature difference power generation module 35 is used for generating power to drive the heat conduction oil. The conduction oil pump conduction line 97 is provided with a small conduction oil pump conduction line switch 93, and the small cooling water pump conduction line 105 is provided with a small cooling water pump conduction line switch 96.
In order to output the high temperature argon gas in the inert gas storage bag 42 at a high pressure, a small blower 50 is provided on the high temperature argon gas delivery line, which is located inside the pipe, absorbs the high temperature argon gas from the inert gas storage bag 42, increases the pressure thereof, and finally blows the gas into the inner baking zone 68 of the tube furnace 69 at the slit gas outlet 54, and the small blower 50 is also driven by the power generation of the semiconductor thermoelectric generation module 35. The input end of the small blower 50 is connected to a small blower airflow inlet duct 49, the output end thereof is connected to a small blower airflow outlet duct 51, and a small blower energization line switch 104 and a small blower brushless motor 106 are provided on a small blower energization line 107.
The semiconductor thermoelectric power generation module 35 generates power through temperature difference and stores the power in the storage battery 95, the small heat conduction oil pump 37, the small cooling water pump 20 and the small blower 50 are all used as load devices of the storage battery 95, the power requirements of the small heat conduction oil pump 37 and the small cooling water pump 20 are small, the storage battery 95 can meet the power requirements and surplus power is supplied to the main power consumption equipment, namely the small blower 50 is the maximum power consumption equipment of the power stored by the semiconductor thermoelectric power generation device and is also a direct power consumption object of the power storage of the power generation device.
In this embodiment, the semiconductor thermoelectric generation module 35 is disposed closely to the other side of the semiconductor hot-end heat-conducting ceramic plate 32. Specifically, as shown in fig. 7, the semiconductor thermoelectric generation module 35 includes: a semiconductor hot-end metal plate 90, one side of which is arranged against the semiconductor hot-end heat-conducting ceramic plate 32; an n-type semiconductor 91 having one side disposed closely to the other side of the semiconductor hot-end metal plate 90; a p-type semiconductor 92, one side of which is arranged close to the other side of the semiconductor hot-end metal plate 90, and the n-type semiconductor 91 and the p-type semiconductor 92 are arranged at intervals; an insulating and heat insulating filling layer 89 filled in the gap between the n-type semiconductor 91 and the p-type semiconductor 92; the semiconductor cold-end metal plate 102 comprises a first semiconductor cold-end metal plate and a second semiconductor cold-end metal plate, the first semiconductor cold-end metal plate is abutted against one side of the n-type semiconductor 91 far away from the semiconductor hot-end metal plate 90, the second semiconductor cold-end metal plate is abutted against one side of the p-type semiconductor 92 far away from the semiconductor hot-end metal plate 90, and the first semiconductor cold-end metal plate and the second semiconductor cold-end metal plate are arranged at intervals; a semiconductor cold-end ceramic plate 101 arranged against the other side of the semiconductor cold-end metal plate 102; the storage battery 95 is respectively connected with the first semiconductor cold-end metal plate and the second semiconductor cold-end metal plate through a semiconductor thermoelectric power generation circuit 103, and the storage battery 95 is connected with a load device for conveying fluid in the roasting cooling system, wherein the load device specifically comprises a small heat conduction oil pump 37, a small cooling water pump 20 and a small air blower 50; the voltage stabilizer 100 is arranged on the semiconductor temperature difference power generation circuit 103, and a semiconductor temperature difference power generation circuit switch 99 is further arranged on the semiconductor temperature difference power generation circuit 103.
The gas pipeline valve in this embodiment, for example: the device comprises an inert gas bottle mouth control valve 2, a vortex tube inlet pipeline flow regulating valve 6, a cooling cavity low-temperature argon inlet pipeline flow regulating valve 23, a vortex tube hot end external pipeline control valve 39, an inert gas storage bag second inlet pipeline control valve 44, an inert gas storage bag outlet pipeline control valve 48, a small blower gas outlet pipeline regulating valve 52 and a cooling cavity high-temperature argon outlet pipeline control valve 79, wherein the valves have flow control and cut-off functions as required by the requirements, and can effectively control the gas flow and the opening and closing of corresponding pipelines.
The heat transfer oil circulation pipeline valve in this embodiment, if: the heat-conducting oil cavity outlet pipeline control valve 28, the heat-conducting oil pump front protection valve 36, the heat-conducting oil pump rear protection valve 38, the spiral heat exchange tube inlet pipeline control valve 56, the spiral heat exchange tube outlet pipeline control valve 62 and the heat-conducting oil cavity inlet pipeline control valve 66 are required to have the functions of opening and closing corresponding pipelines, do not need the flow regulation function and have high-temperature resistance to a certain degree.
The cooling water circulation pipeline valve in this embodiment is as follows: the water-cooling interlayer high-temperature cooling water outlet pipeline control valve 16, the small cooling water pump front protection valve 19, the small cooling water pump rear protection valve 21, the cooling water tank outlet pipeline control valve 73 and the cooling water tank inlet pipeline control valve 77 need to have flow regulation and opening and closing functions.
The threaded interface in this embodiment, for example: the device comprises an inert gas bottle airflow pipeline movable threaded interface 4, a vortex tube hot end external pipeline threaded interface 8, a vortex tube cold end external pipeline threaded interface 12, a divergent nozzle external threaded interface 22, a heat-conducting oil cavity outlet pipeline threaded interface 26, a spiral heat exchange tube inlet pipeline threaded interface 55, a heat-conducting oil cavity inlet pipeline threaded interface 59 and a spiral heat exchange tube outlet external pipeline threaded interface 61. These threaded interfaces are mainly used to perform the connection and disconnection of the relative pipes, while facilitating the maintenance and replacement operations of the partial fittings. The structure or form of the device is not particularly required, and only the related functions are required to be satisfied.
The application method of the embodiment is as follows:
(1) the cell material 108 is baked after firing. It is necessary to take the box cover 84 of the inert atmosphere cooling box 85 away, then take the high temperature quartz tube 98 out of the interior of the tube furnace 69, place it on the quartz tube shelf 86, and quickly cover the box cover 84 to ensure that it is airtight, and then insert the spiral heat exchange tube 67 into the interior of the tube furnace 69;
(2) and (5) cooling the battery material. Opening an inert gas bottle mouth control valve 2, a vortex tube air inlet pipeline flow regulating valve 6, a water-cooling interlayer high-temperature cooling water outlet pipeline control valve 16, a small cooling water pump front protection valve 19, a small cooling water pump rear protection valve 21, a cooling cavity low-temperature argon air inlet pipeline flow regulating valve 23, a heat-conducting oil cavity outlet pipeline control valve 28, a heat-conducting oil pump front protection valve 36, a heat-conducting oil pump rear protection valve 38, a vortex tube hot end external pipeline control valve 39, an inert gas storage bag second air inlet pipeline control valve 44, an inert gas storage bag air outlet pipeline control valve 48, a small blower air outlet pipeline regulating valve 52, a spiral heat exchange tube inlet pipeline control valve 56, a spiral heat exchange tube outlet pipeline control valve 62, a heat-conducting oil cavity inlet pipeline control valve 66, a cooling water tank outlet pipeline control valve 73, a water cooling tank outlet pipeline control valve 73, A cooling water tank inlet pipeline control valve 77 and a cooling cavity high-temperature argon gas outlet pipeline control valve 79; closing the inert gas storage bag gas outlet pipeline control valve 48 and the small blower gas outlet pipeline adjusting valve 52; starting the small cooling water pump 20 and the small heat conduction oil pump 37; the small blower 50 is turned off.
High-pressure argon is released from the inert gas bottle 1 and enters the vortex tube 25 through the inert gas bottle airflow pipeline 3, the inert gas bottle external pipeline 5 and the vortex tube air inlet pipeline 9, and the argon airflow can be divided into high-temperature argon airflow with higher temperature and low-temperature argon airflow with lower temperature due to the energy separation function of the vortex tube 25. The high-temperature argon gas flow with higher temperature enters an inert gas storage bag 42 to be stored through a vortex tube hot end 7, a vortex tube hot end external connection pipeline 33 and an inert gas storage bag first gas inlet pipeline 40. The lower low temperature argon gas flow of temperature passes through vortex tube cold junction 11, divergent spray tube 13, during cooling chamber low temperature argon gas inlet line 14 enters into cooling chamber 10, carries out the heat convection and cools down to high temperature quartz capsule 98 and battery material 108 that lie in quartz capsule shelf 86, thereby takes away a large amount of heats, becomes the higher high temperature argon gas flow of temperature, this strand of the higher high temperature argon gas flow of temperature after the heat absorption intensifies enters into inert gas storage package 42 through cooling chamber high temperature argon gas outlet pipe 78, high temperature argon gas rising pipe 70 and inert gas storage package second inlet line 43 and stores.
Meanwhile, the surface temperature of the radiation water-cooling interlayer 15 receiving the high-temperature radiation heat of the quartz tube 98 and the battery material 108 rises, the temperature of the cooling water in the interlayer rises, and the cooling water with higher temperature carries the high-temperature radiation heat, enters the cooling water tank 109 through the water-cooling interlayer high-temperature cooling water outlet pipeline 18 and the cooling water tank inlet pipeline 76, and transfers the heat to the heat pipe hot end 75 in the cooling water tank 109. After the cooling water releases heat, the temperature is reduced, and the cooling water continues to enter the water-cooling interlayer 15 along the cooling water tank outlet pipeline 74 and the water-cooling interlayer low-temperature cooling water inlet pipeline 81 for the next cycle. While the hot end 75 of the tube carries heat through the cold end 34 of the tube, releasing it to the semiconductor hot end conductive ceramic plate 32, which raises its temperature.
The heat conducting oil inside the spiral heat exchange tube 67 is heated, and then carries a large amount of heat inside the tube furnace 69, enters the heat conducting oil chamber 31 through the spiral heat exchange tube outlet external pipeline 60 and the heat conducting oil chamber inlet pipeline 65, and transfers the heat to the semiconductor hot end heat conducting ceramic plate 32, so that the temperature of the semiconductor hot end heat conducting ceramic plate is increased. The temperature of the heat transfer oil releasing heat is reduced, and the heat transfer oil continues to enter the spiral heat exchange tube 67 along the external pipeline 30 of the outlet pipeline of the heat transfer oil cavity, so that the next heat exchange cycle is performed.
The semiconductor hot-end heat conducting ceramic plate 32 receives a large amount of heat and then the temperature rises, the heat is further transferred to the semiconductor hot-end metal plate 90, the semiconductor cold-end ceramic plate 101 is not heated by an additional heat source and is in direct contact with the external environment, the temperature is lower, and therefore the temperature of the semiconductor cold-end metal plate 102 is lower, so that temperature difference is formed at two ends of the n-type semiconductor 91 and the p-type semiconductor 92 which are connected in series, based on the Seebeck effect, the thermoelectromotive force is formed in a loop of the n-type semiconductor 91 and the p-type semiconductor 92 which are connected in series, and the current generated by the thermoelectromotive force can be transmitted to.
The quartz tube 98 and the battery material 108 with higher temperature carry out high-temperature radiation heat exchange with the water-cooling interlayer 15 and the lower end of the semiconductor hot-end heat-conducting ceramic plate 32, carry out convection heat exchange with the low-temperature argon gas flow from the cold end 11 of the vortex tube, can lose a large amount of heat, and the surface temperature can be rapidly reduced, so that the cooling speed of the battery material 108 can be effectively increased, and the cooling process is carried out in the protection of the argon gas flow, so that the phenomenon of oxidative deterioration can not occur.
(3) And after the battery material is cooled, roasting the battery material of the next batch, and blowing argon gas flow with higher temperature. At this time, the cover 84 of the inert atmosphere cooling box 85 should be removed first, the high temperature quartz tube 98 and the battery material 108 which has been completely cooled inside should be taken out on the quartz tube shelf 86, then the spiral heat exchange tube 67 inserted inside the tube furnace 69 should be taken out, and the quartz tube 98 should be placed in the internal firing zone 68 of the two-temperature zone open type tube furnace after being filled with a new batch of battery material to be fired.
A bottle mouth control valve 2 for closing the inert gas bottle, a flow regulating valve 6 for a vortex tube gas inlet pipeline, a water-cooling interlayer high-temperature cooling water outlet pipeline control valve 16, a front protection valve 19 of a small cooling water pump, a rear protection valve 21 of the small cooling water pump, a flow regulating valve 23 for a cooling cavity low-temperature argon gas inlet pipeline, a heat-conducting oil cavity outlet pipeline control valve 28, a front protection valve 36 of the heat-conducting oil pump, a rear protection valve 38 of the heat-conducting oil pump, an external pipeline control valve 39 at the hot end of the vortex tube, a second gas inlet pipeline control valve 44 of an inert gas storage bag, an inert gas storage bag gas outlet pipeline control valve 48, a small blower gas outlet pipeline regulating valve 52, a spiral heat exchange tube inlet pipeline control valve 56, a spiral heat exchange tube outlet pipeline control valve 62, a heat-conducting oil cavity inlet pipeline control valve 66, a cooling, A cooling water tank inlet pipeline control valve 77 and a cooling cavity high-temperature argon gas outlet pipeline control valve 79; opening an air outlet pipeline control valve 48 of the inert gas storage bag and an air outlet pipeline adjusting valve 52 of the small blower; the small cooling water pump 20 and the small heat conduction oil pump 37 are turned off; the small blower 50 is turned on.
The high temperature argon gas flow at this stage has a high temperature, but a low pressure, and does not have a blowing condition, and it is necessary to blow the argon gas by the power supplied from the small blower 50, and the battery 95 at this stage is always in a discharge state and supplies electric power only to the small blower 50. The argon gas transmission and distribution main pipe 53 of the double-temperature-zone open type tube furnace is connected to one side of a quartz pipe 98 of the tube furnace 69 and is in complete contact, so that gas leakage is guaranteed. While dispensing a relatively high temperature argon stream through the nip outlet 54. The argon flow can meet the use requirement of the battery material roasting process.
When the argon flow with higher temperature can not meet the dosage requirement of the battery material roasting process, the inert gas bottle mouth control valve 2, the vortex tube gas inlet pipeline flow regulating valve 6, the cooling cavity low-temperature argon gas inlet pipeline flow regulating valve 23, the cooling cavity high-temperature argon gas outlet pipeline control valve 79, the vortex tube hot end external pipeline control valve 39 and the inert gas storage bag second gas inlet pipeline control valve 44 need to be opened again, so that the supply of argon gas is ensured.
Example 2:
this embodiment is substantially the same as embodiment 1, and mainly differs therefrom in that: as shown in fig. 8, in the present embodiment, the semiconductor thermoelectric generation module 35 includes: two n-type semiconductors 91 and two p-type semiconductors 92, the n-type semiconductors 91 and the p-type semiconductors 92 being alternately arranged (i.e., corresponding to the first and third p-type semiconductors 92 from left to right in the drawing, and the second and fourth n-type semiconductors 91, 92), and the adjacent n-type semiconductors 91 and p-type semiconductors 92 being arranged at intervals; the semiconductor hot end metal plates 90 and the semiconductor cold end metal plates 102 are respectively arranged at two sides of the n-type semiconductor 91 and the p-type semiconductor 92, the adjacent n-type semiconductor 91 and the adjacent p-type semiconductor 92 form a semiconductor group, the semiconductor hot end metal plates 90 at one side of the semiconductor group are connected, the semiconductor cold end metal plates 102 at the other side of the semiconductor group are not connected, the semiconductor hot end metal plates 90 at one side of the other adjacent semiconductor group of the semiconductor group are not connected, the semiconductor cold end metal plates 102 at the other side of the semiconductor group are connected, and the semiconductor hot end metal plates 90 are arranged close to the semiconductor hot end heat conducting ceramic plate 32; a semiconductor cold-side ceramic plate 101 disposed against the plurality of semiconductor cold-side metal plates 102; an insulating and heat insulating filling layer 89 filled in the gap between the n-type semiconductor 91 and the p-type semiconductor 92; the storage battery 95 is respectively connected with the semiconductor hot end metal plates 90 at two ends or the semiconductor cold end metal plates 102 at two ends through a semiconductor temperature difference power generation circuit 103, and the storage battery 95 is connected with a load device for conveying fluid in the roasting and cooling system, wherein the load device is specifically a small heat conduction oil pump 37, a small cooling water pump 20 and a small blower 50; the voltage regulator 100 is provided on the semiconductor thermoelectric power generation line 103.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.

Claims (10)

1. The utility model provides a calcination battery material inert atmosphere heat sink which characterized in that includes:
an inert gas bottle (1) for supplying an inert gas;
the input end of the vortex tube (25) is connected with the inert gas bottle (1), and the output end of the vortex tube (25) comprises a vortex tube hot end (7) and a vortex tube cold end (11);
the device comprises an inert atmosphere cooling box (85) used for carrying out radiation-convection comprehensive heat exchange cooling on a battery material (108) in a closed environment, wherein a cooling cavity (10) used for placing the roasted battery material (108) is arranged in the inert atmosphere cooling box (85), and a cold end (11) of a vortex tube is communicated with an input end of the cooling cavity (10);
the output ends of the hot end (7) of the vortex tube and the cooling cavity (10) are communicated with the input end of the inert gas storage bag (42);
the semiconductor hot end heat conduction ceramic plate (32) is arranged at one side of the semiconductor hot end heat conduction ceramic plate and is adjacent to the cooling cavity (10);
and the semiconductor temperature difference power generation module (35) is arranged close to the other side of the semiconductor hot end heat conduction ceramic plate (32).
2. The inert atmosphere cooling device for battery roasting materials of claim 1, further comprising a water cooling device, wherein the water cooling device comprises:
the water-cooling interlayer (15) is arranged to be tightly attached to the outer side of the cooling cavity (10), and cooling water flows through the water-cooling interlayer (15);
the input end of the cooling water tank (109) is communicated with the output end of the water-cooling interlayer (15), and the output end of the cooling water tank (109) is communicated with the input end of the water-cooling interlayer (15);
and the heat conduction pipe (58) is used for transferring the heat of the cooling water to the semiconductor hot end heat conduction ceramic plate (32), one end of the heat conduction pipe (58) is arranged in the cooling water tank (109), and the other end of the heat conduction pipe (58) is connected with the semiconductor hot end heat conduction ceramic plate (32).
3. The inert atmosphere cooling device for the roasted battery material as claimed in claim 2, wherein a plurality of cooling water flow partition plates (88) are arranged inside the water-cooling interlayer (15), and the adjacent cooling water flow partition plates (88) are arranged in a staggered manner.
4. The inert atmosphere cooling device for the roasted battery material as claimed in claim 1, wherein a divergent nozzle (13) is arranged between the cold end (11) of the vortex tube and the input end of the cooling cavity (10), the end with the smaller pipe diameter of the divergent nozzle (13) is connected with the cold end (11) of the vortex tube, and the end with the larger pipe diameter of the divergent nozzle (13) is connected with the input end of the cooling cavity (10).
5. The inert atmosphere cooling device for the roasted battery material is characterized in that a quartz tube shelf (86) for placing a quartz tube (98) to be cooled is fixed at the bottom of the cooling cavity (10), and a plurality of quartz tube shelf air holes (87) are formed in the quartz tube shelf (86).
6. Inert atmosphere cooling device for baked battery materials according to claim 1, characterized in that the semiconductor thermoelectric generation module (35) comprises:
a semiconductor hot end metal plate (90) with one side arranged against the semiconductor hot end heat conducting ceramic plate (32);
an n-type semiconductor (91) having one side disposed against the other side of the semiconductor hot-end metal plate (90);
a p-type semiconductor (92), one side of which is arranged close to the other side of the semiconductor hot-end metal plate (90), and the n-type semiconductor (91) and the p-type semiconductor (92) are arranged at intervals;
an insulating and heat-insulating filling layer (89) filled in the gap between the n-type semiconductor (91) and the p-type semiconductor (92);
the semiconductor cold-end metal plate (102) comprises a first semiconductor cold-end metal plate and a second semiconductor cold-end metal plate, the first semiconductor cold-end metal plate is abutted against one side, away from the semiconductor hot-end metal plate (90), of the n-type semiconductor (91), the second semiconductor cold-end metal plate is abutted against one side, away from the semiconductor hot-end metal plate (90), of the p-type semiconductor (92), and the first semiconductor cold-end metal plate and the second semiconductor cold-end metal plate are arranged at intervals;
a semiconductor cold end ceramic plate (101) arranged against the other side of the semiconductor cold end metal plate (102);
battery (95), through semiconductor thermoelectric generation circuit (103) respectively with first semiconductor cold junction metal sheet and second semiconductor cold junction metal sheet be connected, and be connected with on battery (95) and be used for right fluid among the heat sink carries out the load device of carrying.
7. Inert atmosphere cooling device for baked battery materials according to claim 1, characterized in that the semiconductor thermoelectric generation module (35) comprises:
a plurality of n-type semiconductors (91) and a plurality of p-type semiconductors (92), wherein the n-type semiconductors (91) and the p-type semiconductors (92) are alternately arranged, and the adjacent n-type semiconductors (91) and the adjacent p-type semiconductors (92) are arranged at intervals;
the semiconductor hot end metal plates (90) and the semiconductor cold end metal plates (102) are respectively arranged on two sides of an n-type semiconductor (91) and a p-type semiconductor (92), the adjacent n-type semiconductor (91) and the adjacent p-type semiconductor (92) form a semiconductor group, the semiconductor hot end metal plates (90) on one side of the semiconductor group are connected, the semiconductor cold end metal plates (102) on the other side of the semiconductor group are not connected, the semiconductor hot end metal plates (90) on one side of the adjacent semiconductor group are not connected, the semiconductor cold end metal plates (102) on the other side of the adjacent semiconductor group are connected, and the semiconductor hot end metal plates (90) are arranged close to the semiconductor hot end heat conducting ceramic plate (32);
a semiconductor cold-side ceramic plate (101) disposed against the plurality of semiconductor cold-side metal plates (102);
an insulating and heat-insulating filling layer (89) filled in the gap between the n-type semiconductor (91) and the p-type semiconductor (92);
and the storage battery (95) is respectively connected with the semiconductor hot end metal plates (90) at two ends or the semiconductor cold end metal plates (102) at two ends through a semiconductor temperature difference power generation circuit (103), and the storage battery (95) is connected with a load device for conveying the fluid in the cooling device.
8. The inert atmosphere cooling device for the battery-roasting material as recited in claim 1, wherein the inert atmosphere cooling box (85) comprises a box body (83) and a box cover (84) which are connected in a sealing manner, the cooling cavity (10) is arranged in the box body (83), the semiconductor hot-end heat-conducting ceramic plate (32) is arranged on the box cover (84), and the inner wall surface of the box body (83) and the bottom surface of the box cover (84) are both provided with heat radiation absorbing layers.
9. A method for using the inert atmosphere cooling device for battery material calcination according to any one of claims 1 to 8, it is characterized in that the battery material (108) after being roasted is put into a cooling cavity (10) of an inert atmosphere cooling box (85), an inert gas bottle (1) is opened, the inert gas is divided into a cold air flow and a hot air flow after passing through a vortex tube (25), wherein, cold air flows through the cold end (11) of the vortex tube and enters the cooling cavity (10) to be discharged from the output end of the cooling cavity (10) after being subjected to heat convection with the battery material (108), then the gas enters an inert gas storage bag (42) for storage, hot gas flows through the hot end (7) of the vortex tube and directly enters the inert gas storage bag (42) for storage, the semiconductor hot end heat-conducting ceramic plate (32) absorbs heat radiated by the battery material (108) in the cooling cavity (10), and a semiconductor temperature difference power generation module (35) is used for generating power to provide power for fluid transportation in the cooling device.
10. The application method of the inert atmosphere cooling device for the roasted battery material is characterized in that cooling water in the water-cooling interlayer (15) exchanges heat with the inside of the cooling cavity (10) and then flows into the cooling water tank (109), the heat pipe (58) transfers the heat of the cooling water to the semiconductor hot end heat conducting ceramic plate (32), and a semiconductor thermoelectric power generation module (35) is used for generating power to provide power for fluid conveying in the cooling device.
CN202110086821.1A 2021-01-22 2021-01-22 Roasting battery material inert atmosphere cooling device and application method thereof Active CN112880414B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110086821.1A CN112880414B (en) 2021-01-22 2021-01-22 Roasting battery material inert atmosphere cooling device and application method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110086821.1A CN112880414B (en) 2021-01-22 2021-01-22 Roasting battery material inert atmosphere cooling device and application method thereof

Publications (2)

Publication Number Publication Date
CN112880414A true CN112880414A (en) 2021-06-01
CN112880414B CN112880414B (en) 2021-10-15

Family

ID=76050105

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110086821.1A Active CN112880414B (en) 2021-01-22 2021-01-22 Roasting battery material inert atmosphere cooling device and application method thereof

Country Status (1)

Country Link
CN (1) CN112880414B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1696681A (en) * 2005-05-30 2005-11-16 华中科技大学 Equipment for measuring Seebeck coefficient and resistivity of semiconductor material
JP2013069975A (en) * 2011-09-26 2013-04-18 Toshiba Corp Thermoelectric power generation device and thermoelectric power generation method
CN107741159A (en) * 2017-11-13 2018-02-27 晶科能源有限公司 A kind of retracting device and recycling system of silicon ingot heat
CN111043801A (en) * 2019-12-26 2020-04-21 南京工业大学 Air conditioner outdoor unit defrosting system and method integrating vortex tube and semiconductor refrigerating sheet
CN111057844A (en) * 2019-12-17 2020-04-24 中南大学 Roasted pellet cooling machine for laboratory and application method thereof
CN111168076A (en) * 2020-01-03 2020-05-19 广东工业大学 Preparation system and preparation method for nano conductor or semiconductor material with controllable size
CN111534674A (en) * 2020-03-25 2020-08-14 佛山津西金兰冷轧板有限公司 Annealing hydrogen processing system

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1696681A (en) * 2005-05-30 2005-11-16 华中科技大学 Equipment for measuring Seebeck coefficient and resistivity of semiconductor material
JP2013069975A (en) * 2011-09-26 2013-04-18 Toshiba Corp Thermoelectric power generation device and thermoelectric power generation method
CN107741159A (en) * 2017-11-13 2018-02-27 晶科能源有限公司 A kind of retracting device and recycling system of silicon ingot heat
CN111057844A (en) * 2019-12-17 2020-04-24 中南大学 Roasted pellet cooling machine for laboratory and application method thereof
CN111043801A (en) * 2019-12-26 2020-04-21 南京工业大学 Air conditioner outdoor unit defrosting system and method integrating vortex tube and semiconductor refrigerating sheet
CN111168076A (en) * 2020-01-03 2020-05-19 广东工业大学 Preparation system and preparation method for nano conductor or semiconductor material with controllable size
CN111534674A (en) * 2020-03-25 2020-08-14 佛山津西金兰冷轧板有限公司 Annealing hydrogen processing system

Also Published As

Publication number Publication date
CN112880414B (en) 2021-10-15

Similar Documents

Publication Publication Date Title
US10012447B2 (en) Method and apparatus for storing thermal energy in thermal masses for electricity generation
ES2207742T3 (en) FUEL BATTERY SYSTEM FOR THE PRODUCTION OF ELECTRICITY, HEATING, COOLING AND VENTILATION.
CN101401252A (en) Temperature controller
CN109585729A (en) A kind of controlling temp type power battery pack
CN110120568B (en) Low-energy-consumption power battery heat dissipation and heat preservation system utilizing thermoelectric power generation and application
CN112880404B (en) Battery material roasting and cooling system under inert atmosphere and application method thereof
CN106299543A (en) A kind of graphene battery group heat management system
CN107666024A (en) A kind of liquid-cooled heat management system of battery bag
CN108362151B (en) Heat storage and energy storage power generation system
CN113130937A (en) Heat exchange device, fuel cell system and temperature control method thereof
CN112880414B (en) Roasting battery material inert atmosphere cooling device and application method thereof
CN115513572A (en) Semiconductor temperature control system of energy storage battery pack
CN101783631A (en) Semiconductor thermoelectric generator
US6520249B2 (en) Low-temperature waste-heat-gas driven refrigeration system
CN115810770A (en) System for heating solid hydrogen storage bottle by utilizing waste heat
CN110061321A (en) A kind of power battery thermal management system based on thermoelectricity and vortex tube
CN207265193U (en) It is a kind of to utilize the lithium battery preheating of two phase flow power type separate heat pipe and cooling system
CN210533065U (en) High-efficient cooling system of fritting furnace
US2973623A (en) Elastic fluid power plant with matrices of solid material for heat transfer and regeneration
CN108767372A (en) Battery thermal management system, accumulator and automobile
CN210569953U (en) Magnetic material fritting furnace
CN208332817U (en) A kind of novel water-cooled cooling-water machine
CN208507896U (en) Battery thermal management system, battery and automobile
CN206056000U (en) A kind of electric card refrigerating plant of fluid heat transfer
JPH109709A (en) Metal hydride adsorption type thermally driven refrigerating machine

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant