CN112877741B - Bubble removal method - Google Patents
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- CN112877741B CN112877741B CN202110040352.XA CN202110040352A CN112877741B CN 112877741 B CN112877741 B CN 112877741B CN 202110040352 A CN202110040352 A CN 202110040352A CN 112877741 B CN112877741 B CN 112877741B
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
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Abstract
The invention discloses a bubble removing method, which is used for removing bubbles on the surface of a wafer when the wafer is electroplated, and comprises the following steps: s10, controlling the wafer to be immersed into the electroplating pool along with the wafer clamp in a posture inclined relative to the electroplating liquid level, and enabling the dead zone of the wafer clamp to be located in the overflow area of the electroplating pool; and S20, controlling the wafer clamp to move along the direction parallel to or close to the electroplating liquid level, so that the dead zone of the wafer clamp leaves the overflow area of the electroplating pool. The bubble removing method utilizes the characteristic that the liquid level of the overflow area of the electroplating pool is higher than the electroplating liquid level of the electroplating pool, the wafer is driven by the wafer clamp to be immersed into the electroplating liquid level in a face-down posture, the dead zone of the wafer clamp is moved to the overflow area, bubbles in the dead zone are taken out by utilizing the overflow flow of the electroplating liquid, and the purpose of quickly and reliably eliminating the bubbles is achieved.
Description
Technical Field
The invention relates to the field of wafer electroplating, in particular to a bubble removal method.
Background
The wafer is easy to generate bubbles in the process of entering the electroplating cavity along with the clamp, the bubbles can stay at the inner side of the wafer clamp, and when the bubbles stay on the surface to be electroplated of the wafer, the position cannot be electroplated, so that the existence of the bubbles directly influences the electroplating quality.
As shown in FIG. 1, in the prior art, when a wafer 2 'mounted on a wafer chuck 1' is immersed in a plating solution in a plating bath in a face-down posture, since an inner peripheral edge 11 'of the wafer chuck 1' is higher than a wafer surface, even if the wafer chuck 1 'is tilted as shown in FIG. 1, bubbles 3' are formed from residual gas during immersion in the plating solution and stay between a corner between the inner peripheral edge 11 'of the wafer chuck 1' and the wafer 2 ', which is a dead zone 12'. Even if the wafer chuck 1 ' is further tilted, there is still a bubble 3 ' remaining in the dead zone 12 '. The bubbles can be expelled from the dead zone only by placing the wafer chuck 1' upright or upside down (i.e., with the wafer facing upward).
However, immersing the wafer in the plating liquid in a standing or inverted posture requires a high mechanical structure in the plating equipment, and although bubbles in the dead zone can be completely removed, the mechanical structure is complicated, the equipment cost is high, and the reliability is low.
Disclosure of Invention
The invention aims to overcome the defects of complex mechanical structure, high cost and low reliability of equipment caused by removing bubbles in a dead zone of a wafer clamp in the prior art, and provides a bubble removing method.
The invention solves the technical problems through the following technical scheme:
a bubble removing method for removing bubbles from a surface of a wafer when the wafer is plated, the bubble removing method comprising:
s10, controlling the wafer to be immersed into the electroplating pool along with the wafer clamp in a posture inclined relative to the electroplating liquid level, and enabling the dead zone of the wafer clamp to be located in the overflow area of the electroplating pool;
and S20, controlling the wafer clamp to move along the direction parallel to or close to the electroplating liquid level, so that the dead zone of the wafer clamp leaves the overflow area of the electroplating pool.
The bubble removing method utilizes the characteristic that the liquid level of an overflow area of the electroplating pool is higher than the electroplating liquid level of the electroplating pool, the wafer is driven by the wafer clamp to be immersed into the electroplating liquid level in a face-down posture, the dead zone of the wafer clamp is moved to the overflow area, and bubbles in the dead zone are taken out by utilizing the overflow flow of the electroplating liquid, so that the purpose of eliminating the bubbles is realized.
According to the bubble removing method, an additional mechanical structure is not needed to be added in the electroplating equipment, and the purpose of removing bubbles can be achieved only by using an existing mechanism in the electroplating equipment, so that compared with the scheme that the wafer clamp is immersed in the electroplating solution in a vertical or inverted posture due to the additional mechanical structure, the bubble removing method can effectively simplify the complexity of the electroplating equipment, save the cost and is high in reliability.
Preferably, step S11 is included between step S10 and step S20: and controlling the wafer clamp to rotate by taking the central axis of the wafer clamp as a center.
After the dead zone of the wafer clamp is moved to the overflow area, the wafer clamp is rotated, and the electroplating solution is brought into the dead zone by utilizing the tension of the surface of the wafer to the electroplating solution, so that the aim of replacing bubbles in the dead zone by the electroplating solution is fulfilled. On the basis that bubbles in the dead zone are taken out in an electroplating solution overflowing mode, the electroplating solution is filled into the dead zone in a rotary wafer clamp mode, the bubbles are discharged, and the purpose of completely, reliably and thoroughly eliminating the bubbles is achieved.
Preferably, in step S11, the number of rotations of the wafer chuck is greater than two rotations.
This scheme setting improves through rotatory wafer anchor clamps mode, utilizes liquid tension to carry over the effect of remaining bubble in the blind spot out.
Preferably, in step S11, the rotation speed of the wafer chuck ranges from 40 rpm to 200 rpm.
This scheme setting improves through rotatory wafer anchor clamps mode, utilizes liquid tension to carry over the effect of remaining bubble in the blind spot out. The rotating speed is higher than 40 revolutions per minute, bubbles are guaranteed to be taken out of the dead zone, the rotating speed is lower than 200 revolutions per minute, the phenomenon that the load on the wafer and the wafer clamp is increased due to overhigh rotating speed is avoided, and the reliability of equipment is improved.
Preferably, step S10 includes:
adjusting the posture of the wafer clamp to be inclined relative to the electroplating liquid level;
controlling the wafer clamp to dip into the electroplating pool along a downward direction, and stopping dipping when the dead zone of the wafer clamp is close to the electroplating liquid surface;
and controlling the wafer clamp to move along the direction parallel to the electroplating liquid level, so that the dead zone of the wafer clamp moves to the overflow area of the electroplating pool.
The scheme arrangement provides a specific scheme for moving the dead zone of the wafer clamp to the overflow area of the electroplating pool under the condition that the wafer clamp inclines relative to the electroplating liquid level, and the purpose of reliably replacing gas in the dead zone with electroplating liquid is achieved. In the moving scheme, the moving amplitude of the wafer clamp relative to the electroplating pool is small, so that the process of eliminating bubbles does not occupy too much time, and the overall electroplating efficiency can be ensured.
Preferably, in step S10, the step of: controlling the wafer chuck to immerse in the plating bath in a downward direction, stopping immersion when the dead zone of the wafer chuck approaches the plating bath surface, and: and controlling the wafer clamp to move along the direction parallel to the electroplating liquid level, so that the dead zone of the wafer clamp is moved to the overflow area of the electroplating pool and executed simultaneously.
The scheme is arranged, the wafer clamp is controlled to move downwards to be close to the electroplating pool and move the dead zone to the overflow zone in parallel, so that the wafer clamp can be immersed in the electroplating pool with less time and movement distance, bubbles in the dead zone are eliminated, the time is saved, and the flow steps are simplified.
Preferably, the included angle of the wafer clamp relative to the electroplating liquid level when the wafer clamp is immersed in the electroplating pool ranges from 0 degree to 5 degrees.
Within the angle range, the inclination amplitude of the wafer clamp is small, so that the mechanical structure for controlling the inclination of the wafer clamp cannot generate excessive load, and the corresponding mechanical structure for implementing the step of inclining the wafer clamp can be simplified.
Preferably, in step S20, the moving direction of the wafer chuck is controlled such that the inner peripheral edge of the wafer chuck is immersed under the plating liquid surface when the dead zone of the wafer chuck is away from the overflow area of the plating bath.
The scheme is arranged, so that the wafer clamp is prevented from being immersed in the electroplating solution completely after being moved out of an overflow area, and the influence on the bubble elimination effect caused by the fact that the external air reflows to the dead zone due to the fact that the dead zone of the wafer clamp is too high from the interval of the electroplating solution surface is avoided.
Preferably, in step S20, the wafer clamp is controlled to move towards the center of the electroplating pool in the direction close to the electroplating liquid level, so that the dead zone of the wafer clamp is away from the overflow area of the electroplating pool.
According to the scheme, the wafer clamp is moved along the direction close to the electroplating liquid level, so that the wafer clamp is gradually close to the electroplating liquid level when the wafer clamp is moved out of an overflow area, and the phenomenon that the external air reflows to the dead area due to the fact that the distance between the dead area of the wafer clamp and the electroplating liquid level is too high is avoided.
Preferably, step S30 is further included after step S20: controlling the wafer chuck to be completely immersed into the electroplating liquid level along a downward direction.
A wafer plating apparatus characterized by employing the bubble removing method as described above.
According to the wafer electroplating equipment, the characteristic that the liquid level of the overflow area of the electroplating pool is higher than the electroplating liquid level of the electroplating pool is utilized, the wafer is driven by the wafer clamp to immerse into the electroplating liquid level in a face-down posture, the dead zone of the wafer clamp is moved to the overflow area, and bubbles in the dead zone are taken out through overflow flow of the electroplating liquid, so that the purpose of eliminating the bubbles is achieved. Compared with other devices, the wafer electroplating device has the advantages of simpler structure, lower cost and higher reliability while eliminating bubbles in the wafer clamp.
The positive progress effects of the invention are as follows: according to the bubble removing method and the wafer electroplating equipment, the characteristic that the liquid level of an overflow area of an electroplating pool is higher than the electroplating liquid level of the electroplating pool is utilized, the wafer is driven by a wafer clamp to be immersed into the electroplating liquid level in a face-down posture, the dead zone of the wafer clamp is moved to the overflow area, bubbles in the dead zone are taken out through overflow flow of electroplating liquid, and the purpose of eliminating the bubbles is achieved.
According to the bubble removing method and the wafer electroplating equipment adopting the bubble removing method, an additional mechanical structure is not required to be added in the electroplating equipment, and the purpose of removing bubbles can be achieved only by utilizing an existing mechanism in the electroplating equipment, so that compared with the scheme that the wafer clamp is immersed in the electroplating solution in a vertical or inverted posture due to the arrangement of the additional mechanical structure, the bubble removing method can effectively simplify the complexity of the electroplating equipment, save the cost and achieve high reliability.
Drawings
Fig. 1 is a schematic diagram of the location of a dead zone on a wafer chuck of the prior art.
Fig. 2 is a schematic structural diagram (a) of a wafer chuck of a wafer plating apparatus according to an embodiment of the invention.
Fig. 3 is a schematic flow chart of a bubble removal method according to an embodiment of the invention.
FIG. 4 is a schematic diagram (I) illustrating a state of the wafer chuck relative to the plating bath according to an embodiment of the present invention.
FIG. 5 is a schematic diagram of a wafer chuck according to an embodiment of the present invention in a state corresponding to the electroplating bath.
FIG. 6 is a schematic view (III) of a wafer chuck relative to a plating bath according to an embodiment of the present invention.
Fig. 7 is a schematic diagram (a) illustrating the movement of the wafer chuck according to an embodiment of the present invention.
Fig. 8 is a partially enlarged view of a wafer plating apparatus according to an embodiment of the present invention.
Fig. 9 is a schematic diagram (two) illustrating the movement of the wafer chuck according to an embodiment of the present invention.
Description of reference numerals:
background
Wafer clamp 1 ″
Inner peripheral edge 11
Wafer 2 ″
The invention
Connecting end 14
Electroplating pool 4
Plating liquid level 41
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention.
The invention provides a bubble removing method which is applied to wafer electroplating equipment and is used for enabling a wafer 2 to be immersed into an electroplating pool 4 along with a wafer clamp 1 before the wafer electroplating equipment carries out electroplating work on the wafer 2, and avoiding bubbles from influencing the normal implementation of electroplating.
As shown in fig. 2, in the embodiment, the wafer 2 is mounted on the wafer holder 1, the end of the wafer holder 1 facing away from the wafer 2 is a connection end 14, and the connection end 14 is used for connecting with an external driving mechanism (not shown in the figure) to generate displacement through the operation of the driving mechanism, so as to achieve the purpose of driving the wafer 2 and the wafer holder 1 to move (or turn/rotate) along a specific direction. The state shown in fig. 2 is a wafer placing state of the wafer holder 1, and the wafer 2 is placed and fixed on the wafer holder 1 with the plating surface facing upward. Then, the driving mechanism drives the entire wafer chuck 1 to turn over by driving the connecting end 14 to turn over, so that the plating surface of the wafer 2 faces downward, and then the driving mechanism drives the wafer 2 to move downward along with the wafer chuck 1 to dip below the plating liquid level 41 of the plating tank 4.
As shown in fig. 3, the bubble removing method provided in this embodiment at least includes the following steps:
s10, the wafer 2 is controlled to be immersed into the plating bath 4 with the wafer holder 1 in an inclined posture with respect to the plating liquid level 41, and the dead zone 12 of the wafer holder 1 is located in the overflow area 42 of the plating bath 4.
And S20, controlling the wafer clamp 1 to move along the direction parallel to or close to the plating liquid level 41, and enabling the dead zone 12 of the wafer clamp 1 to leave the overflow area 42 of the plating pool 4.
In the embodiment shown in fig. 4, the driving mechanism controls the wafer holder 1 to incline relative to the plating liquid level 41, and the inclination angle can be between 0 ° and 5 °. Then, the wafer holder 1 is further controlled to be slowly immersed into the plating bath 4 in such an inclined posture, and the plating surface of the wafer 2 is continuously in contact with the plating liquid, and at this time, even if the wafer holder 1 is completely immersed into the plating liquid, the air remains in the dead space 12 located above the wafer holder 1 and near the inner peripheral edge 11 thereof and cannot be removed, thereby forming air bubbles which affect the normal implementation of plating. The position of the overflow area 42 in the plating bath 4 in the present embodiment is shown in FIGS. 4 and 5, and the plating liquid overflows from the peripheral side of the plating bath 4 in the direction indicated by the broken-line arrow in FIG. 4, so that the level of the plating liquid in the overflow area 42 is higher than the plating liquid level 41.
Therefore, as shown in fig. 5, in the bubble removing method of the present embodiment, the driving mechanism is controlled to drive the wafer holder 1 to move, and the wafer holder 1 is moved to make the dead zone 12 of the wafer holder located in the overflow area 42 of the plating tank 4, at this time, the overflowing plating solution continuously flows through the dead zone 12, and the gas in the dead zone 12 is taken out, and then the wafer holder 1 is further moved and completely immersed in the plating solution, and no bubble exists in the wafer holder 1, thereby achieving the purpose of removing the bubble.
The bubble removing method utilizes the characteristic that the liquid level of an overflow area 42 of a plating tank 4 is higher than the plating liquid level 41 of the plating tank 4, the wafer clamp 1 is immersed into the plating liquid level 41 with the wafer 2 facing downwards, and the dead zone 12 of the wafer clamp 1 is moved to the overflow area 42, so that bubbles in the dead zone 12 are taken out through the overflow flow of the plating liquid, and the purpose of eliminating the bubbles is achieved.
According to the bubble removing method, an additional mechanical structure is not needed to be added in the electroplating equipment, and the purpose of removing bubbles can be achieved only by using an existing mechanism in the electroplating equipment, so that compared with the scheme that the additional mechanical structure is arranged to enable the wafer clamp 1 to be immersed into the electroplating solution in a vertical or inverted posture, the bubble removing method can effectively simplify the complexity of the electroplating equipment, save the cost and is high in reliability.
On this basis, as shown in fig. 6, the wafer 2 may be driven by the wafer chuck 1 to rotate, so that the wafer 2 rotates around the central axis 13 of the wafer chuck 1. After the dead zone 12 of the wafer chuck 1 is moved to the overflow area 42, the wafer chuck 1 is rotated to bring the plating solution into the dead zone 12 by the tension of the surface of the wafer 2 against the plating solution, thereby replacing the bubbles in the dead zone 12 with the plating solution. Thus. On the basis of carrying out bubbles in the dead zone 12 in a plating solution overflow mode, the plating solution is filled into the dead zone 12 in a mode of rotating the wafer clamp 1, the bubbles are discharged, and the purpose of completely, reliably and thoroughly eliminating the bubbles is achieved.
The wafer chuck 1 is provided with a driving motor therein for rotating the portion of the wafer chuck 1 holding the wafer 2, and a mechanism for rotating the wafer 2 is also required in the normal plating process of the wafer 2. In other words, the solution for driving the wafer 2 to rotate to further eliminate the bubbles can also use the electroplating equipment in the prior art, so that the bubble elimination method can be used to eliminate the bubbles on the premise of modifying the electroplating equipment to a lower degree.
Therefore, in the present embodiment, between steps S10 and S20, step S11 is further included: the wafer holder 1 is controlled to rotate around the central axis 13 of the wafer holder 1. The number of rotation turns of the wafer clamp 1 is larger than two turns, meanwhile, the rotation speed of the wafer clamp 1 is larger than 40 revolutions per minute, bubbles are guaranteed to be taken out of the dead zone 12, meanwhile, the rotation speed of the wafer clamp 1 is smaller than 200 revolutions per minute, the phenomenon that the load on the wafer 2 and the wafer clamp 1 is increased due to overhigh rotation speed is avoided, and the reliability of equipment is improved.
Wherein the driving mechanism controls the wafer clamp 1 to move from the position shown in fig. 4 to the position shown in fig. 5, at least comprises the movement along two directions, firstly, the wafer clamp 1 is controlled to dip into the electroplating pool 4 along the downward direction, and the dipping is stopped when the dead zone 12 of the wafer clamp 1 approaches to the electroplating liquid surface 41; next, the wafer holder 1 is controlled to move in a direction parallel to the plating liquid surface 41, so that the dead zone 12 of the wafer holder 1 moves into the overflow area 42 of the plating bath 4.
In the present embodiment, the movement of the wafer holder 1 in the downward direction and the movement of the wafer holder 1 in the direction parallel to the plating liquid level 41 (i.e., the horizontal direction) are controlled simultaneously.
If the freedom of movement of the driving mechanism is high, the wafer holder 1 can be moved along the path indicated by the dotted arrow in fig. 7, so that the dead zone 12 of the wafer holder 1 is moved into the overflow zone 42 while the wafer holder 1 is moved from top to bottom to the plating bath 4, thereby synchronously immersing the other zones of the wafer holder 1 below the plating liquid level 41. According to the moving scheme, the movement of the wafer clamp 1 which is downwards close to the electroplating pool 4 and the movement of the dead zone 12 which is parallelly moved to the overflow zone are simultaneously carried out, so that the wafer clamp 1 keeps moving in the same direction, the wafer clamp can be immersed in the electroplating pool 4 by taking less time and moving distance, bubbles in the dead zone 12 are eliminated, the time is saved, the total time consumed by electroplating a single wafer 2 can be reduced, and the flow steps are simplified.
Wherein, when the wafer 2 is located at the position shown in fig. 5, there should be a gap between the inner periphery 11 of the wafer holder 1 and the edge of the plating bath 4 to avoid collision. In this example. As shown in fig. 8, the minimum distance L from the edge of the plating bath 4 to the inner peripheral edge 11 of the wafer chuck 1 can be set to 1 mm.
Then, as shown in fig. 9, the driving mechanism drives the wafer holder 1 to move toward the center of the plating bath 4 along the direction indicated by the dashed arrow in fig. 9, which is close to the plating solution surface 41. After the wafer clamp 1 moves to the center position of the electroplating pool 4, the driving mechanism drives the wafer clamp 1 to move downwards and immerse in the electroplating pool 4. The wafer clamp 1 is driven to move towards the direction close to the electroplating liquid level 41, the purpose of gradually approaching the electroplating liquid level 41 is achieved, and the phenomenon that the external air reflows into the dead zone 12 due to the fact that the dead zone 12 of the wafer clamp 1 is too high from the electroplating liquid level 41 is avoided. Of course, in other embodiments, the wafer holder 1 may also be moved in a direction parallel to the plating liquid level 41, in order to likewise prevent air from flowing back into the dead space 12.
When the wafer holder 1 is moved away from the overflow area 42, it is ensured that the inner peripheral edge 11 of the wafer holder 1 is completely submerged below the plating liquid level 41, so as to avoid air backflow caused by the inner peripheral edge 11 of the wafer holder 1 being higher than the plating liquid level 41. This can be achieved by the drive mechanism controlling the wafer holder 1 to move in a direction close to or parallel to the plating liquid level 41.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.
Claims (9)
1. A bubble removing method for removing bubbles on a wafer surface when electroplating the wafer, the bubble removing method comprising:
s10, controlling the wafer to be immersed into a plating tank along with the wafer clamp in a posture inclined relative to the plating liquid level, and enabling the dead zone of the wafer clamp to be located in the overflow area of the plating tank, wherein the liquid level of the overflow area of the plating tank is higher than the plating liquid level;
and S20, controlling the wafer clamp to move along a direction parallel to or close to the electroplating liquid level, so that when the dead zone of the wafer clamp leaves the overflow area of the electroplating pool, the inner side periphery of the wafer clamp is immersed under the electroplating liquid level, and the dead zone is the corner area between the inner side periphery of the wafer clamp and the wafer, wherein residual gas stays when the wafer clamp is immersed in the electroplating liquid.
2. The bubble removing method according to claim 1, comprising, between step S10 and step S20, step S11: and controlling the wafer clamp to rotate by taking the central axis of the wafer clamp as a center.
3. The bubble removal method of claim 2, wherein the wafer chuck rotates more than two times in step S11.
4. The bubble removal method of claim 2, wherein in step S11, the wafer chuck rotates at a speed ranging from 40 rpm to 200 rpm.
5. The bubble removing method according to claim 1, comprising in step S10:
adjusting the posture of the wafer clamp to be inclined relative to the electroplating liquid level;
controlling the wafer clamp to dip into the electroplating pool along a downward direction, and stopping dipping when the dead zone of the wafer clamp is close to the electroplating liquid surface;
and controlling the wafer clamp to move along the direction parallel to the electroplating liquid level, so that the dead zone of the wafer clamp moves to the overflow area of the electroplating pool.
6. The bubble removing method according to claim 5, wherein in step S10, the step of controlling the wafer chuck to immerse in the plating bath in a downward direction, the step of stopping the immersion when the dead zone of the wafer chuck approaches the plating liquid surface, and the step of controlling the wafer chuck to move in a direction parallel to the plating liquid surface so that the dead zone of the wafer chuck moves into an overflow area of the plating bath are simultaneously performed.
7. The bubble removing method according to claim 1, wherein in step S10, the wafer chuck is immersed in the plating bath at an angle ranging from 0 ° to 5 ° with respect to the plating liquid level, excluding 0 °.
8. The bubble removal method according to claim 1, wherein in step S20, the wafer holder is controlled to move toward a central position of the plating bath in a direction close to the plating liquid surface so that the dead zone of the wafer holder is separated from an overflow region of the plating bath.
9. The bubble removing method according to claim 1, further comprising a step S30 after the step S20 of: controlling the wafer chuck to be completely immersed into the electroplating liquid level along a downward direction.
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| CN202110040352.XA CN112877741B (en) | 2021-01-13 | 2021-01-13 | Bubble removal method |
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| CN112813482B (en) * | 2020-12-30 | 2021-11-02 | 泉芯集成电路制造(济南)有限公司 | Chip electroplating system and chip electroplating control method |
| CN113862746B (en) * | 2021-11-09 | 2023-02-17 | 新阳硅密（上海）半导体技术有限公司 | Pre-wetting system and method for electroplating process |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001234395A (en) * | 2000-02-28 | 2001-08-31 | Tokyo Electron Ltd | Wafer plating device |
| JP4108941B2 (en) * | 2000-10-31 | 2008-06-25 | 株式会社荏原製作所 | Substrate gripping apparatus, processing apparatus, and gripping method |
| US6964792B1 (en) * | 2000-11-03 | 2005-11-15 | Novellus Systems, Inc. | Methods and apparatus for controlling electrolyte flow for uniform plating |
| JP2002220692A (en) * | 2001-01-24 | 2002-08-09 | Ebara Corp | Plating equipment and method |
| US6524463B2 (en) * | 2001-07-16 | 2003-02-25 | Technic, Inc. | Method of processing wafers and other planar articles within a processing cell |
| CN1674231A (en) * | 2002-07-25 | 2005-09-28 | 松下电器产业株式会社 | Plating apparatus |
| US7727863B1 (en) * | 2008-09-29 | 2010-06-01 | Novellus Systems, Inc. | Sonic irradiation during wafer immersion |
| US20160237584A1 (en) * | 2015-02-12 | 2016-08-18 | Applied Materials, Inc. | Electroplating with reduced air bubble defects |
| CN106226242A (en) * | 2016-07-26 | 2016-12-14 | 江苏师范大学 | The electrode process with special pattern processing method analyzes system |
| CN108735595A (en) * | 2017-04-13 | 2018-11-02 | Rct解决方法有限责任公司 | Method and apparatus for being chemically treated semiconductor substrate |
| KR101972663B1 (en) * | 2017-10-27 | 2019-08-16 | 인하대학교 산학협력단 | Deep type electro polishing apparatus |
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