CN112864303A - Preparation method of photoelectric detector based on laser-induced graphene/perovskite - Google Patents
Preparation method of photoelectric detector based on laser-induced graphene/perovskite Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
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- 239000011248 coating agent Substances 0.000 claims abstract description 10
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- 239000004642 Polyimide Substances 0.000 claims description 7
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- 238000005516 engineering process Methods 0.000 claims description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 239000005022 packaging material Substances 0.000 claims description 4
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- -1 Polydimethylsiloxane Polymers 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims description 2
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- 238000001514 detection method Methods 0.000 abstract description 4
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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Abstract
The invention discloses a method for a photoelectric detector based on laser-induced graphene/perovskite, which comprises the following steps: (1) carrying out patterned irradiation on the substrate film by using a laser to obtain a laser-induced graphene layer with a specific shape; (2) coating the perovskite spin-coating liquid on the middle area of the laser-induced graphene layer, and baking the perovskite in a drying oven until the perovskite is completely dried to obtain a composite structure; (3) and then covering the surface of the composite structure by using a packaging film material for packaging, and connecting metal wires on two sides of the laser-induced graphene electrode to complete the preparation of the laser-induced graphene/perovskite photoelectric detector. The preparation method is simple and convenient, the detector is thin and easy to bend, the photoelectric detection performance is good, the circulation stability is strong, and the method can be used for wearable photoelectric detection equipment.
Description
Technical Field
The invention belongs to the technical field of photoelectric devices, and particularly relates to a preparation method of a photoelectric detector based on laser-induced graphene/perovskite.
Background
The photothermal effect is essentially a coupling of the seebeck effect and the photothermal effect, and thermoelectric output can be realized without a direct external heat source. Solar thermoelectric generators were reported as early as 1954, but the equipment of such devices was expensive and inefficient [ Telks M. Solar thermoelectric Generatorrs [J]. Journal of Applied Physics. 1954. 25(6)]. In 2011, d.kraemer et al, academy of massachusetts, usa, prepared a planar thermoelectric generation assembly with a generation efficiency of 4.6%, but due to its rigid structure and heavy assembly, the device was not suitable for wearable electronic devices [ krarmer D, Poudel B, Feng H P, et al, High-performance flat-panel thermoelectric generators with High thermal concentration [ J]. Nat Mater. 2011. 10(7):532-538]. In 2015, W.Zhu et al of Beijing aerospace university prepared a Bi-Te based layered flexible thermoelectric power generation device, the middle of the device was provided with a heat absorption layer for absorbing light and heating, and the incident light intensity was 120mW/cm2Can generate 12K working temperature difference and output 40mV voltage [ Zhu W, Deng Y, Gao M, et al, high Bi-Te based flexible thin-film solar thermal generator with light sensing feature [ J]. Energy Conversion and Management, 2015. 106：1192-1200]. In 2017, researchers at the university of Korea-weishan national science and technology have prepared Bi-integrated substrates on flexible substrates2Te3Base thermoelectric couple and submicron thick Ti/MgF2Wearable flexible thermoelectric device with superlattice solar energy absorption layer, wherein the device is at 1000W/m2Can generate 20.9 ℃ working temperature difference and output 55mV open circuit voltage, but the solar light absorption layer of the device needs complicated design and MgF adopted2The material is toxic, limiting the possibility of its use [ Jung Y S, Jeong D H, Kang S B. et al. week solar thermoelectric generator drive by unprecedented high temperature difference [ J]. Nano Energy, 2017.40:663-672]。
The development of the laser direct writing technology (DLW) solves the problems of heavy device, complex design and the like. Compared with the traditional electronic manufacturing technology, the direct laser writing technology is simple in preparation method, does not need a mask, and is particularly suitable for manufacturing cheap flexible electronic products in high flux and large scale as non-contact and mask-free manufacturing. Lin et al, university of rice, materials science and nanoengineering, 2014, prepared three-dimensional polyimide film (PI) on polyimide film (PI) by DLW with carbon dioxide laserPorous graphene electrodes. The result shows that the DLW process can directly induce graphene on a Polyimide (PI) film, and has the advantages of simple operation, high processing speed and high patterning precision. Wherein graphene is a carbon-based two-dimensional material with extremely high specific surface area (2630 m)2/g) and excellent electrical conductivity (200S/m), while having superior thermoelectric properties due to the perovskite, including high seebeck index and ultra-low thermal conductivity. Based on the above, the subject group provides an infrared photoelectric detector based on a laser direct writing polyimide induced graphene material and combining graphene and perovskite.
Disclosure of Invention
In view of this, the present invention provides a method for manufacturing a photodetector based on laser-induced graphene/perovskite, which is directed to the defects and shortcomings of the prior art. The method is low in cost and simple in process, and can be used for flexible wearable equipment.
In order to achieve the above object, the present invention is achieved by the following technical means.
The invention relates to a preparation method of a photoelectric detector based on laser-induced graphene/perovskite, which comprises the following process steps:
(1) preparing patterned laser-induced graphene:
placing a substrate material on a laser direct writing processing system for scanning irradiation, and controlling laser direct writing parameters by using a laser direct writing technology and according to a designed detector pattern to obtain a laser-induced graphene film;
(2) coating of perovskite solution:
uniformly coating a perovskite solution on the middle part of the laser direct writing area prepared in the step (1) by adopting a spin coating method, and then placing the device in a baking oven until the perovskite suspension coating solution is completely attached to a detector structure to obtain a composite structure of laser-induced graphene and perovskite;
(3) device package
And finally, packaging the photoelectric detector, covering a packaging material in the composite region in the step (2), and adhering the edges of the packaging material by using a binder, so that the laser-induced graphene/perovskite photoelectric detector is prepared.
The preparation method of the laser-induced graphene/perovskite photoelectric detector in the step (1) is characterized in that the adopted laser can be a semiconductor laser, a carbon dioxide laser or a femtosecond laser and the like.
The preparation method for the laser-induced graphene/perovskite photoelectric detector in the step (2) in the method is characterized in that the adopted perovskite solution can be CH3NH3PbI3Solution, CsPbBr3And (3) solution.
The preparation method of the laser-induced graphene/perovskite-based photodetector in the step (3) is characterized in that the wavelength of the adopted laser is infrared light.
The method for encapsulating the laser-induced graphene/perovskite photodetector in the step (3) is characterized in that the adopted encapsulating material comprises polydimethylsiloxane PDMS or polyurethane PU material.
Compared with the prior art, the invention has the following advantages:
1. according to the invention, the preparation of graphene by laser direct writing polyimide is combined with perovskite to prepare a photoelectric detector, and the detector can detect infrared light invisible to naked eyes.
2. The manufacturing process is simple and quick, and can be applied to large-scale production.
3. The device has thin thickness, easy bending, certain flexibility and only 1.6cm of area2And thus may be used in flexible wearable devices.
Drawings
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings, in which:
FIG. 1 is a schematic cross-sectional view of the apparatus of the present invention;
FIG. 2 is a schematic diagram of the preparation process of the present invention;
FIG. 3 is a diagram of the photoelectric response test of the present invention.
In the figure, 1-polyimide film, 2-graphene layer prepared by laser direct writing, 3-perovskite layer, 4-packaging layer, 5-lead, 6-laser irradiation and 7-external circuit.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings; it should be understood that the preferred embodiments are illustrative of the invention only and are not limiting upon the scope of the invention.
FIG. 1 is a block diagram of the preparation process of the present invention, and the following section is a detailed description of each of the technical schemes.
(1) Preparing patterned laser-induced graphene:
and carrying out laser direct writing on the detection device pattern by the semiconductor laser. The wavelength of the semiconductor laser is 450 nm, the speed adopted during direct writing is 100 mm/s, and the power is 1750 mW. The direct writing process adopts a transverse scanning mode, the laser direct writing pattern is designed through a computer terminal, then is guided into easy Engrave software, and is controlled by the software to perform laser direct writing. The 450 nm laser acts on the polyimide film, the polyimide film is induced into the graphene material, and the material is high in heat-conducting property and capable of rapidly transferring a heat effect. The structure is shown in FIG. 2 (b) and has an area of 1.424cm2。
(2) Coating of perovskite solutions
Yellow transparent CH3NH3PbI3And (3) drawing the perovskite solution to the upper end and the lower end of the carbonization pattern prepared by laser direct writing in the step (1), wherein the coating position is shown in fig. 2, and after coating is finished, baking the device drying oven for 20 min at 30 ℃ until the solution on the device is completely dried, so that the preliminary preparation of the laser-induced graphene/perovskite-based photoelectric detector is finished. Perovskite CH3NH3PbI3The detector also has super thermoelectric properties, such as high Seebeck coefficient and ultra-low thermal conductivity, and plays a role in improving the photo-thermal electrical property of the detector. As shown in fig. 3, when infrared light irradiates the surface of the detector, the crystal lattice of the porous graphite is impacted by photons, vibration is enhanced, temperature is raised,i.e. the conversion of light radiation into heat energy. The temperature difference is formed between one end and the other end of the light irradiation part after the temperature rise, and finally the concentration difference of star carriers in the thermoelectric material drives a plurality of hot terminals in the material to directionally move to the cold end of the material for accumulation, so that a built-in potential difference is formed, and the direct current can be directly led out by an external lead.
(3) Device package
And packaging the photoelectric detector by using the PDMS film. And (d) leading out a lead as shown in fig. 2(d), covering the top end and the bottom end of the detector with PDMS, and adhering edges of the PDMS by using an adhesive, so that the preparation of the laser-induced graphene/perovskite-based photoelectric detector is completed. An I-t curve for testing the infrared light detection performance of the laser-induced graphene/perovskite-based photodetector is shown in fig. 3, and the infrared light with the power of 871mW emitted by a 980nm fiber laser is used for testing.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and it is apparent that those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (5)
1. A preparation method of a photoelectric detector based on laser-induced graphene perovskite mainly provides a flexible photoelectric detector component which is low in cost and easy to produce based on a mode of combining a laser direct writing technology and a two-dimensional material, and is characterized by comprising the following process steps:
preparing patterned laser-induced graphene:
placing a substrate material on a laser direct writing processing system for scanning irradiation, and controlling laser direct writing parameters by using a laser direct writing technology and according to a designed detector pattern to obtain a laser-induced graphene film;
coating of perovskite solution:
uniformly coating a perovskite solution on the middle part of the laser direct writing area prepared in the step (1) by adopting a spin coating method, and then placing the device in a baking oven until the perovskite suspension coating solution is completely attached to a detector structure to obtain a composite structure of laser-induced graphene and perovskite;
device package
And finally, packaging the photoelectric detector, covering a packaging material in the composite region in the step (2), and adhering the edges of the packaging material by using a binder, so that the laser-induced graphene/perovskite photoelectric detector is prepared.
2. The method for preparing a laser-induced graphene/perovskite photodetector as claimed in claim 1, wherein the laser used can be a semiconductor laser, a carbon dioxide laser or a femtosecond laser.
3. The method for preparing a laser-induced graphene/perovskite photodetector as claimed in claim 1, wherein the substrate material comprises polyimide, or a lignin film, or polyetheretherketone, or paper.
4. The method according to claim 1, wherein the perovskite solution used is CH3NH3PbI3Solutions, or CsPbBr3And (3) solution.
5. The method for encapsulating a laser-induced graphene/perovskite photodetector as claimed in claim 1, wherein the encapsulating material comprises Polydimethylsiloxane (PDMS) or Polyurethane (PU) material.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410330A (en) * | 2021-06-22 | 2021-09-17 | 金华紫芯科技有限公司 | Solar blind ultraviolet detector of graphene amorphous gallium oxide film |
| CN114740615A (en) * | 2022-04-11 | 2022-07-12 | 南京邮电大学 | Adjustable terahertz attenuator and preparation method thereof |
| CN115780207A (en) * | 2022-12-05 | 2023-03-14 | 南方科技大学 | Perovskite thin film post-treatment method based on laser-induced secondary crystallization |
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| CN107039257A (en) * | 2017-04-06 | 2017-08-11 | 清华大学深圳研究生院 | A kind of graphical preparation method of induced with laser graphene and extent product |
| CN107195787A (en) * | 2017-06-16 | 2017-09-22 | 陕西师范大学 | Self-driven photodetector based on Graphene electrodes and perovskite light-absorption layer and preparation method thereof |
| CN107206741A (en) * | 2014-11-26 | 2017-09-26 | 威廉马歇莱思大学 | Graphene mixing material for the induced with laser of electronic installation |
| CN108630813A (en) * | 2018-05-08 | 2018-10-09 | 四川大学 | A kind of flexibility perovskite luminous energy capture and storage assembly and preparation method thereof |
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2021
- 2021-01-07 CN CN202110016686.3A patent/CN112864303A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107206741A (en) * | 2014-11-26 | 2017-09-26 | 威廉马歇莱思大学 | Graphene mixing material for the induced with laser of electronic installation |
| CN106129253A (en) * | 2016-07-19 | 2016-11-16 | 中国科学院重庆绿色智能技术研究院 | A kind of photo-detector of Graphene perovskite composite construction and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410330A (en) * | 2021-06-22 | 2021-09-17 | 金华紫芯科技有限公司 | Solar blind ultraviolet detector of graphene amorphous gallium oxide film |
| CN113410330B (en) * | 2021-06-22 | 2022-07-22 | 金华紫芯科技有限公司 | Solar blind ultraviolet detector for graphene amorphous gallium oxide film |
| CN114740615A (en) * | 2022-04-11 | 2022-07-12 | 南京邮电大学 | Adjustable terahertz attenuator and preparation method thereof |
| CN115780207A (en) * | 2022-12-05 | 2023-03-14 | 南方科技大学 | Perovskite thin film post-treatment method based on laser-induced secondary crystallization |
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Application publication date: 20210528 |