CN112864150B - 超结功率器件 - Google Patents

超结功率器件 Download PDF

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CN112864150B
CN112864150B CN201911184109.4A CN201911184109A CN112864150B CN 112864150 B CN112864150 B CN 112864150B CN 201911184109 A CN201911184109 A CN 201911184109A CN 112864150 B CN112864150 B CN 112864150B
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龚轶
袁愿林
刘伟
刘磊
毛振东
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Suzhou Dongwei Semiconductor Co ltd
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Abstract

本发明实施例提供的一种超结功率器件，包括至少一个第一MOSFET单元和至少一个第二MOSFET单元，第一MOSFET单元在超结功率器件开启和关断时具有不同的阈值电压，超结功率器件在反向导通时，反向电流可以流过第一MOSFET单元，这提高了超结功率器件的反向恢复速度；第二MOSFET单元相较于第一MOSFET单元具有更短的电流沟道，可以有效控制超结功率器件的芯片尺寸。本发明实施例的超结功率器件在具有快的反向恢复速度的同时还具有小的芯片尺寸。

Description

超结功率器件
技术领域
本发明属于半导体超结功率器件技术领域，特别是涉及一种反向恢复速度快且芯片尺寸小的半导体超结功率器件。
背景技术
现有技术的一种半导体超结功率器件的剖面结构如图1所示，包括：n型漏区50，n型漏区50通过漏极接触金属层58接漏极电压；位于n型漏区50之上的n型漂移区51，位于n型漂移区51顶部的p型体区52，位于p型体区52内的n型源区53，n型源区53和p型体区52通过源极接触金属层57接源极电压；位于p型体区下方的p型柱状掺杂区59；位于p型体区52内且介于n型源区53和n型漂移区51之间的电流沟道，以及控制该电流沟道开启和关断的栅极结构，该栅极结构包括栅介质层54和栅极55。
现有技术的半导体超结功率器件在关断时，反向电流会流过半导体超结功率器件内寄生的体二极管，此时体二极管的电流存在注入少子载流子现象，而这些少子载流子在半导体超结功率器件再一次开启时进行反向恢复，导致较大的反向恢复电流，反向恢复时间长。目前通常采用寿命控制技术如：电子辐照、深能级复合中心等来提高半导体超结功率器件的反向恢复速度，该方法的缺点是工艺难度高、制造成本昂贵，而且不能准确控制半导体超结功率器件的反向恢复速度。
发明内容
有鉴于此，本发明的目的是提供一种反向恢复速度快的超结功率器件，以解决现有技术中的超结功率器件因少子载流子注入问题造成的反向恢复时间长的技术问题。
本发明实施例提供的一种超结功率器件，包括：
n型漏区，位于所述n型漏区之上的n型漂移区，位于所述n型漂移区内的多个p型柱状掺杂区，位于每个所述p型柱状掺杂区之上的p型体区，以及至少一个第一MOSFET单元和至少一个第二MOSFET单元；
所述第一MOSFET单元包括：位于所述p型体区内的第一n型源区；位于所述p型体区之上的第一栅极结构，所述第一栅极结构包括第一栅介质层以及位于所述第一栅介质层之上的第一栅极和n型浮栅，且在横向上，所述n型浮栅位于靠近所述n型漂移区的一侧，所述第一栅极位于靠近所述第一n型源区的一侧并延伸至所述n型浮栅之上，所述第一栅极通过电容耦合作用于所述n型浮栅；位于所述第一栅介质层中的一个开口，所述n型浮栅通过所述开口与所述p型体区接触形成p-n结二极管；
所述第二MOSFET单元包括：位于所述p型体区内的第二n型源区，用于控制介于所述第二n型源区和所述n型漂移区之间的电流沟道的开启和关断的第二栅极结构，所述第二栅极结构包括第二栅介质层和第二栅极。
可选的，本发明所述的超结功率器件，所述第二MOSFET单元还包括凹陷在所n型漂移区内的栅沟槽，所述第二栅介质层和所述第二栅极位于所述栅沟槽内。
可选的，本发明所述的超结功率器件，所述第一n型源区和所述第二n型源区位于同一个所述p型体区内。
可选的，本发明所述的超结功率器件，所述第一n型源区和所述第二n型源区位于两个不同的所述p型体区内。
可选的，本发明所述的超结功率器件，所述第一栅极延伸至所述n型浮栅之上且覆盖所述n型浮栅靠近所述n型漂移区一侧的侧壁。
可选的，本发明所述的超结功率器件，所述第一MOSFET单元的第一栅极与所述第一n型源区电性连接。
本发明实施例提供的一种超结功率器件在反向导通时，第一MOSFET单元具有低阈值电压，使得第一MOSFET单元在低栅极电压(或0V电压)下导通，从而能够增加流过第一MOSFET单元的反向电流，进而能够减少流过超结功率器件中寄生的体二极管的电流，提高超结功率器件的反向恢复速度。第二MOSFET单元具有比第一MOSFET单元更短的电流沟道，用于控制超结功率器件的芯片尺寸，使得超结功率器件在具有快的反向恢复速度的同时还具有小的芯片尺寸。
附图说明
为了更加清楚地说明本发明示例性实施例的技术方案，下面对描述实施例中所需要用到的附图做一简单介绍。
图1是现有技术的超结功率器件的等效电路示意图；
图2是本发明提供的一种超结功率器件的第一个实施例的剖面结构示意图；
图3是本发明提供的一种超结功率器件的第二个实施例的剖面结构示意图；
图4是本发明提供的一种超结功率器件的第三个实施例的剖面结构示意图。
具体实施方式
以下将结合本发明实施例中的附图，通过具体实施方式，完整地描述本发明的技术方案。同时，为清楚地说明本发明的具体实施方式，说明书附图中所列示意图，放大了本发明所述的层和区域的尺寸，且所列图形大小并不代表实际尺寸。说明书中所列实施例不应仅限于说明书附图中所示区域的特定形状，而是包括所得到的形状如制备引起的偏差等。
图2是本发明提供的一种超结功率器件的第一个实施例的剖面结构示意图，如图2所示，本发明实施例提供的一种超结功率器件包括n型漏区20，位于n型漏区20之上的n型漂移区21，位于n型漂移区中的多个p型柱状掺杂区29，图2中仅示例性的示出了两个p型柱状掺杂区29，第一p型柱状掺杂区29与相邻的n型漂移区21之间形成电荷平衡，用以提高超结功率器件的耐压；位于每个p型柱状掺杂区29之上的p型体区22，以及至少一个第一MOSFET单元200和至少一个第二MOSFET单元300，在图2中仅示例性的示出了一个第一MOSFET单元200和一个第二MOSFET单元300。
本发明实施例的第一MOSFET单元200包括：位于p型体区22内的第一n型源区23；位于p型体区22之上的第一栅极结构，该第一栅极结构包括第一栅介质层24、n型浮栅25和第一栅极26，第一栅极26和n型浮栅25位于第一栅介质层24之上，且在横向上，n型浮栅25位于靠近n型漂移区21的一侧，第一栅极26位于靠近第一n型源区23的一侧且延伸至n型浮栅25之上，第一栅极26和n型浮栅25由绝缘介质层27隔离，第一栅极26通过电容耦合作用于n型浮栅25。绝缘介质层27通常为二氧化硅。在n型浮栅25下方的第一栅介质层24中形成有一个开口28，n型浮栅25开口28与p型体区22接触形成p-n结二极管。
如图2所示，本发明实施例的第二MOSFET单元300包括位于p型体区22内的第二n型源区33，在图2所示的本发明实施例的超结功率器件中，第一MOSFET单元200的第一n型源区23和第二MOSFET单元300的第二n型源区33形成在两个不同的p型体区22中；位于p型体区22之上的第二栅介质层34以及位于第二栅介质层34之上的第二栅极36，第二栅极36可以通过栅极电压来控制第二MOSFET单元300的电流沟道(即介于第二n型源区33与n型漂移区21之间的电流沟道)的开启和关断。
本发明实施例的超结功率器件，在正向阻断状态时，n型漏区20被施加高电压，第一MOSFET单元200中的p-n结二极管被正向偏置，n型浮栅25被充入正电荷，这使得n型浮栅25下面的电流沟道的阈值电压Vht1降低。
本发明实施例的超结功率器件在正向阻断状态和正向开启状态时，漏源电压Vds大于0V，n型浮栅25下面的电流沟道的阈值电压Vht1对整个第一MOSFET单元200的阈值电压Vth的影响很低，第一MOSFET单元200仍具有高阈值电压。本发明实施例的超结功率器件在关断时，当源漏电压Vsd大于0V时，n型浮栅25下面的电流沟道的阈值电压Vht1对整个第一MOSFET单元200的阈值电压Vth的影响很大，使得第一MOSFET单元200具有低阈值电压Vth，从而使第一MOSFET单元200的电流沟道在低栅极电压(或0V电压)下导通，从而能够增加流过第一MOSFET单元200的反向电流，减少流过超结功率器件中寄生的体二极管的电流，提高超结功率器件的反向恢复速度。
本发明实施例的超结功率器件中的第一MOSFET单元200用于调节超结功率器件的反向恢复速度，但是由于第一栅极26和n型浮栅25横向设置，同时受第一栅介质层24中的开口28的尺寸的限制，第一MOSFET单元200具有很长的电流沟道，这会增加超结功率器件芯片的尺寸，不利于超结功率器件进行更小尺寸的封装。本发明实施例通过设置第二MOSFET单元300，第二MOSFET单元300不设置n型浮栅结构，这可以使得第二MOSFET单元300相较于第一MOSFET单元200具有短的电流沟道，因此，通过设置第一MOSFET单元200和第二MOSFET单元300的比例，可以在保证超结功率器件具有快的反向恢复速度的前提下，还可以有效控制超结功率器件的芯片尺寸，从而使超结功率器件芯片可以进行更小尺寸的封装。
本发明实施例的超结功率器件，由于第一MOSFET单元200和第二MOSFET单元300具有不同的栅极结构，为避免第一MOSFET单元200和第二MOSFET单元300具有不同的阈值电压，可以使得第一MOSFET单元200的第一栅极26与第一n型源区23电性连接，即第一栅极26接源极电压，此时第一MOSFET单元200仅用于流过反向电流，而不提供超结功率器件的开启电流，这可以保证超结功率器件的电流沟道开启的一致性。
图3是本发明提供的一种超结功率器件的第二个实施例的剖面结构示意图，与图2所示的本发明的第一个实施例所述超结功率器件结构不同的是，本实施例中的第一n型源区23和第二n型源区33形成在同一个p型体区22内，同时，第二MOSFET单元300还包括一个凹陷在n型漂移区21内的栅沟槽，第二栅介质层34和第二栅极36均形成在该栅沟槽内。采用垂直电流沟道结构的第二MOSFET单元300可以进一步减小超结功率器件的芯片尺寸。
图4是本发明提供的一种超结功率器件的第三个实施例的剖面结构示意图，与图3所示的本发明的第二个实施例所述超结功率器件结构不同的是，本实施例中的第一MOSFET单元200的第一栅极26延伸至n型浮栅25之上且覆盖n型浮栅25靠近n型漂移区21一侧的侧壁，这可以进一步增大第一栅极26覆盖n型浮栅25的面积，进而能够增大第一栅极26对n型浮栅26的电容耦合率。
以上具体实施方式及实施例是对本发明技术思想的具体支持，不能以此限定本发明的保护范围，凡是按照本发明提出的技术思想，在本技术方案基础上所做的任何等同变化或等效的改动，均仍属于本发明技术方案保护的范围。

Claims (6)

1.一种超结功率器件，其特征在于，包括：
n型漏区，位于所述n型漏区之上的n型漂移区，位于所述n型漂移区内的多个p型柱状掺杂区，位于每个所述p型柱状掺杂区之上的p型体区，以及至少一个第一MOSFET单元和至少一个第二MOSFET单元；
所述第一MOSFET单元包括：位于所述p型体区内的第一n型源区；位于所述p型体区之上的第一栅极结构，所述第一栅极结构包括第一栅介质层以及位于所述第一栅介质层之上的第一栅极和n型浮栅，且在横向上，所述n型浮栅位于靠近所述n型漂移区的一侧，所述第一栅极位于靠近所述第一n型源区的一侧并延伸至所述n型浮栅之上，所述第一栅极通过电容耦合作用于所述n型浮栅；位于所述第一栅介质层中的一个开口，所述n型浮栅通过所述开口与所述p型体区接触形成p-n结二极管；
所述第二MOSFET单元包括：位于所述p型体区内的第二n型源区，用于控制介于所述第二n型源区和所述n型漂移区之间的电流沟道的开启和关断的第二栅极结构，所述第二栅极结构包括第二栅介质层和第二栅极。
2.如权利要求1所述的超结功率器件，其特征在于，所述第二MOSFET单元还包括凹陷在所n型漂移区内的栅沟槽，所述第二栅介质层和所述第二栅极位于所述栅沟槽内。
3.如权利要求1所述的超结功率器件，其特征在于，所述第一n型源区和所述第二n型源区位于同一个所述p型体区内。
4.如权利要求1所述的超结功率器件，其特征在于，所述第一n型源区和所述第二n型源区位于两个不同的所述p型体区内。
5.如权利要求1所述的超结功率器件，其特征在于，所述第一栅极覆盖所述n型浮栅靠近所述n型漂移区一侧的侧壁。
6.如权利要求1所述的超结功率器件，其特征在于，所述第一MOSFET单元的第一栅极与所述第一n型源区电性连接。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576646A (zh) * 2013-10-11 2015-04-29 苏州东微半导体有限公司 一种集成电路芯片及其制造方法
CN106229343A (zh) * 2016-08-12 2016-12-14 上海鼎阳通半导体科技有限公司 超结器件
CN109755241A (zh) * 2017-11-01 2019-05-14 苏州东微半导体有限公司 一种功率mosfet器件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1420457B1 (en) * 2002-11-14 2012-01-11 STMicroelectronics Srl Manufacturing method of an insulated gate power semiconductor device with Schottky diode
JP2007059636A (ja) * 2005-08-25 2007-03-08 Renesas Technology Corp Ｄｍｏｓｆｅｔおよびプレーナ型ｍｏｓｆｅｔ
US7928470B2 (en) * 2005-11-25 2011-04-19 Denso Corporation Semiconductor device having super junction MOS transistor and method for manufacturing the same
JP2009088005A (ja) * 2007-09-27 2009-04-23 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US8324053B2 (en) * 2009-09-30 2012-12-04 Alpha And Omega Semiconductor, Inc. High voltage MOSFET diode reverse recovery by minimizing P-body charges
JP5665567B2 (ja) * 2011-01-26 2015-02-04 株式会社東芝 半導体素子
CN103915439A (zh) * 2013-01-09 2014-07-09 苏州东微半导体有限公司 一种半导体器件及其制造方法
JP6298307B2 (ja) * 2014-02-03 2018-03-20 エイブリック株式会社 半導体メモリ装置およびその製造方法
US9324856B2 (en) * 2014-05-30 2016-04-26 Texas Instruments Incorporated MOSFET having dual-gate cells with an integrated channel diode
US9553087B1 (en) * 2015-11-02 2017-01-24 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
CN110061057B (zh) * 2019-05-06 2020-08-18 重庆大学 一种具有集成隧穿二极管的超结功率mosfet

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576646A (zh) * 2013-10-11 2015-04-29 苏州东微半导体有限公司 一种集成电路芯片及其制造方法
CN106229343A (zh) * 2016-08-12 2016-12-14 上海鼎阳通半导体科技有限公司 超结器件
CN109755241A (zh) * 2017-11-01 2019-05-14 苏州东微半导体有限公司 一种功率mosfet器件

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