CN112864034B - Aluminum corrosion treatment method and system - Google Patents
Aluminum corrosion treatment method and system Download PDFInfo
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- CN112864034B CN112864034B CN201911180695.5A CN201911180695A CN112864034B CN 112864034 B CN112864034 B CN 112864034B CN 201911180695 A CN201911180695 A CN 201911180695A CN 112864034 B CN112864034 B CN 112864034B
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
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Abstract
The invention discloses a treatment method and a system for aluminum corrosion, wherein the treatment method comprises the following steps: s1, judging whether aluminum corrosion occurs on the target surface where the metal aluminum on the processed object is located, and if so, executing a step S2; s2, immersing the target surface into an acidic corrosive liquid, and enabling the acidic corrosive liquid to perform isotropic reaction with the metal aluminum so as to remove corrosives generated on the metal aluminum. According to the invention, whether the surface of the silicon wafer where the metal aluminum is located is corroded by the aluminum can be automatically, timely and accurately determined through image comparison and/or fluorescence analysis, namely, the corrosion phenomenon can be found at the initial stage of aluminum corrosion, and then the silicon wafer which is corroded by the aluminum is immersed into acid corrosive liquid for corrosion treatment, so that the mixture of the aluminum and the halogen element is rapidly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, and the continuous deterioration caused by the continuous reaction of the halogen element and the aluminum is avoided, so that the reliability of the product is effectively ensured.
Description
Technical Field
The invention relates to a semiconductor process treatment method, in particular to a treatment method and a treatment system for aluminum corrosion.
Background
Aluminum is a common interconnect lead metal material in semiconductor integrated circuits, and aluminum is the most common metal material in the metallization process of semiconductor fabrication. Among them, aluminum Corrosion (aluminum corrosion) phenomenon, that is, a phenomenon that metallic aluminum reacts with halogen elements such as F/CL (fluorine/chlorine) to generate a corrosive substance containing F/CL, is a common phenomenon, specifically shown in fig. 1 and 2, where a represents a silicon wafer and B represents a corrosive substance. Once aluminum corrosion occurs on the silicon wafer, if not accurately treated in time, the F/CL can continuously react with aluminum, so that the corrosion is further deteriorated, and the reliability of the product is seriously affected.
Disclosure of Invention
The invention aims to overcome the defect that in the prior art, halogen elements continuously react with aluminum after aluminum corrosion occurs so as to influence the reliability of products.
The invention solves the technical problems by the following technical scheme:
the invention provides a treatment method of aluminum corrosion, which comprises the following steps:
s1, judging whether aluminum corrosion occurs on the target surface where the metal aluminum on the processed object is located, and if so, executing a step S2;
s2, immersing the target surface into an acidic corrosive liquid, and enabling the acidic corrosive liquid to perform isotropic reaction with the metal aluminum so as to remove corrosives generated on the metal aluminum.
Preferably, step S2 further comprises:
s3, washing the target surface by adopting deionized water.
Preferably, step S1 includes:
s11, scanning the target surface by adopting scanning equipment and acquiring a target image;
s12, judging whether the target image is consistent with the sample image, if so, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface.
Preferably, step S1 includes:
s13, adopting at least one light beam with a set incidence angle to irradiate the target surface and obtaining the reflection angle of the corresponding reflected light beam;
s14, judging whether the reflection angle is equal to the set incidence angle, if so, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface; or alternatively, the first and second heat exchangers may be,
when a plurality of light beams with the set incidence angles are used to irradiate the target surface, the step S13 further includes:
s15, acquiring the first quantity of the reflected light beams with the same reflection angle;
s16, calculating the ratio of the first quantity to the total quantity of the light beams with the set incidence angles;
s17, judging whether the ratio exceeds a set threshold value, if so, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface.
Preferably, the corrosives are a mixture containing aluminum and halogen elements;
the step S1 comprises the following steps:
s18, adopting fluorescence analysis equipment to emit incident light with set wavelength to the target surface and acquiring a corresponding fluorescence image;
s19, analyzing the fluorescent image, judging whether halogen elements exist, and if so, determining that aluminum corrosion occurs on the target surface; otherwise, determining that aluminum corrosion does not occur on the target surface.
Preferably, the acidic corrosive liquid comprises 65% -85% of phosphoric acid, 5% -15% of acetic acid, 1% -5% of nitric acid, 1% -3% of fluoboric acid and 2% -5% of water.
Preferably, the chemical reaction time in the step S2 is 1-2 minutes, and the chemical reaction rate is 180-220A/min; and/or the number of the groups of groups,
the object to be processed comprises a silicon wafer.
The invention also provides a processing system for aluminum corrosion, which comprises a judging module and a processing module;
the judging module is used for judging whether aluminum corrosion occurs on the target surface where the metal aluminum is located on the processed object, and if so, the processing module is called;
the processing module is used for immersing the target surface into an acidic corrosive liquid, so that the acidic corrosive liquid and the metal aluminum perform isotropic reaction, and corrosives generated on the metal aluminum are removed.
Preferably, the processing system further comprises a rinse module;
the rinsing module is used for rinsing the target surface by deionized water.
Preferably, the judging module comprises a target image unit and a third judging unit;
the target image unit is used for scanning the target surface by adopting scanning equipment and acquiring a target image;
the third judging unit is used for judging whether the target image is consistent with the sample image or not, if so, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface.
Preferably, the judging module comprises a reflection angle obtaining unit and a first judging unit;
the reflection angle acquisition unit is used for adopting at least one light beam with a set incidence angle to irradiate the target surface and acquiring the reflection angle of the corresponding reflection light beam;
the first judging unit is used for judging whether the reflection angle is equal to the set incidence angle or not, and if yes, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface; or alternatively, the first and second heat exchangers may be,
when a plurality of light beams with the set incidence angles are adopted to irradiate the target surface, the judging module comprises a quantity obtaining unit, a ratio calculating unit and a second judging unit;
the quantity acquisition unit is used for acquiring a first quantity of the reflected light beams with the same reflection angle;
the ratio calculating unit is used for calculating the ratio of the first quantity to the total quantity of the light beams with the set incidence angles;
the second judging unit is used for judging whether the ratio exceeds a set threshold value, and if so, determining that the aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface.
Preferably, the corrosives are a mixture containing aluminum and halogen elements;
the judging module comprises a fluorescent image acquisition unit and a fourth judging unit;
the fluorescence image acquisition unit is used for transmitting incident light with set wavelength to the target surface by adopting fluorescence analysis equipment and acquiring a corresponding fluorescence image;
the fourth judging unit is used for analyzing the fluorescent image and judging whether halogen elements exist or not, and if so, determining that aluminum corrosion occurs on the target surface; otherwise, determining that aluminum corrosion does not occur on the target surface.
Preferably, the acidic corrosive liquid comprises 65% -85% of phosphoric acid, 5% -15% of acetic acid, 1% -5% of nitric acid, 1% -3% of fluoboric acid and 2% -5% of water.
Preferably, the chemical reaction time corresponding to the removal of the corrosive substances in the processing module is 1-2 minutes, and the chemical reaction rate is 180-220A/min; and/or the number of the groups of groups,
the object to be processed comprises a silicon wafer.
The invention has the positive progress effects that:
according to the invention, whether the surface of the silicon wafer where the metal aluminum is located is corroded by the aluminum can be automatically, timely and accurately determined through image comparison and/or fluorescence analysis, namely, the corrosion phenomenon can be found at the initial stage of aluminum corrosion, and then the silicon wafer which is corroded by the aluminum is immersed into an acidic corrosive liquid for corrosion treatment, so that the mixture of the aluminum and the halogen element is rapidly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, and the continuous deterioration caused by the continuous reaction of the halogen element and the aluminum is avoided, so that the reliability of the product is effectively ensured.
Drawings
FIG. 1 is a first electron microscope scan image of aluminum corrosion occurring on a conventional silicon wafer.
FIG. 2 is a second electron microscope scan image of aluminum corrosion occurring on a conventional silicon wafer.
FIG. 3 is a flow chart showing a method for treating aluminum corrosion according to example 1 of the present invention.
Fig. 4 is a first electron microscope scanning image processed by the aluminum etching processing method of embodiment 1 of the present invention.
Fig. 5 is a second electron microscope scanning image after the treatment of aluminum corrosion in example 1 of the present invention.
FIG. 6 is a first flowchart of the aluminum etching treatment method of embodiment 2 of the present invention.
FIG. 7 is a second flowchart of the treatment method of aluminum corrosion of example 2 of the present invention.
FIG. 8 is a third flowchart of the method for treating aluminum corrosion according to example 2 of the present invention.
Fig. 9 is a fourth flowchart of the treatment method of aluminum corrosion of embodiment 2 of the present invention.
FIG. 10 is a first fluorescence image of the fluorescence analysis before treatment of the aluminum corrosion treatment method of example 2 of the present invention.
FIG. 11 is a second fluorescence image of fluorescence analysis after treatment by the treatment method of aluminum corrosion of example 2 of the present invention.
FIG. 12 is a schematic block diagram of an aluminum corrosion treatment system according to example 3 of the present invention.
FIG. 13 is a schematic view of a first module of the aluminum corrosion treatment system of example 4 of the present invention.
FIG. 14 is a second block diagram of the aluminum corrosion treatment system of example 4 of the present invention.
FIG. 15 is a third block diagram of an aluminum corrosion treatment system according to example 4 of the present invention.
FIG. 16 is a fourth block diagram of an aluminum corrosion treatment system according to example 4 of the present invention.
Detailed Description
The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention.
Example 1
As shown in fig. 3, the treatment method of aluminum corrosion of the present embodiment includes:
s101, judging whether aluminum corrosion occurs on the target surface where the metal aluminum on the processed object is located, if so, executing a step S102;
wherein the object to be processed includes, but is not limited to, a silicon wafer.
S102, immersing the target surface in an acidic corrosive liquid, and enabling the acidic corrosive liquid to perform isotropic reaction with the metal aluminum so as to remove corrosives generated on the metal aluminum.
Wherein the corrosives are a mixture containing aluminum and halogen elements (such as fluorine, chlorine and the like).
The acidic corrosive liquid comprises 65% -85% of phosphoric acid, 5% -15% of acetic acid, 1% -5% of nitric acid, 1% -3% of fluoboric acid and 2% -5% of water.
The chemical reaction time is 1-2 minutes, and the chemical reaction rate is 180-220A/min. Preferably, the chemical reaction rate is about 200 a/min.
In addition, the length of the chemical reaction time is positively related to the thickness of the metal aluminum, and is also related to the process requirement, and if the requirement on the corrosion degree of the metal aluminum is not high, the chemical reaction time can be flexibly controlled; if it is desired that the metallic aluminum is not corroded as much as possible, it is necessary to clean the corrosive and to shorten the chemical reaction time as much as possible.
S103, flushing the target surface by deionized water.
Specifically, 1) putting the silicon wafer into an etching liquid tank, fully immersing the silicon wafer into an acidic etching liquid, fully contacting and reacting metallic aluminum and corrosives on the target surface of the silicon wafer with the acidic etching liquid, and enabling the acidic etching liquid and the metallic aluminum to perform isotropic reaction, wherein the chemical reaction time is controlled to be 1 minute, and the chemical reaction rate is 200A/min, namely, the corrosives generated on the surface of an aluminum strip or on the side wall of the aluminum strip can be effectively thrown away by consuming aluminum, so that continuous deterioration caused by continuous reaction of fluorine, chlorine and the like with the aluminum is avoided. 2) And placing the reacted silicon wafer into a deionized water tank, flushing the surface where the metal aluminum is positioned by adopting deionized water, setting the flushing time of equipment to be 1 minute each time, and the flushing times to be 10 times, wherein the water flow strength can be specifically set according to the working characteristics of the equipment, so that the whole treatment process is completed. The flushing time and the flushing times can also be adjusted and set according to actual conditions.
As shown in fig. 4, the surface of the silicon wafer after the etching material B in fig. 1 is removed is shown; as shown in fig. 5, the surface of the silicon wafer after the etching material B in fig. 2 is removed, that is, the etching material in the surface of the silicon wafer is completely removed by the treatment method of this embodiment, so that the metal aluminum is effectively inhibited from continuing to be corroded. The scales in fig. 1, 2, 4 and 5 are all 1 um.
In the embodiment, whether the surface of the silicon wafer where the metal aluminum is located is corroded by the aluminum can be automatically, timely and accurately determined, namely, the corrosion phenomenon can be found at the initial stage of aluminum corrosion, and then the silicon wafer which is corroded by the aluminum is immersed into an acid corrosive liquid for corrosion treatment, so that the mixture of the aluminum and the halogen element is rapidly removed, namely, the metal aluminum is prevented from being further corroded by simple and effective wet treatment, and the continuous deterioration caused by the continuous reaction of the halogen element and the aluminum is avoided, so that the reliability of the product is effectively ensured.
Example 2
The treatment method of aluminum corrosion of this example is a further improvement of example 1, specifically:
as shown in fig. 6, step S101 includes:
s1011, scanning the target surface by adopting scanning equipment and acquiring a target image;
s1012, judging whether the target image is consistent with the sample image, if so, determining that aluminum corrosion does not occur on the surface of the target; otherwise, determining that aluminum corrosion occurs on the target surface. Or alternatively, the first and second heat exchangers may be,
as shown in fig. 7, step S101 includes:
s1013, adopting at least one light beam with a set incidence angle to irradiate the target surface and obtaining the reflection angle of the corresponding reflected light beam;
s1014, judging whether the reflection angle is equal to the set incidence angle, if so, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the surface of the target; or alternatively, the first and second heat exchangers may be,
as shown in fig. 8, when a plurality of light beams with set incident angles are irradiated to the target surface, step S1013 further includes:
s1015, obtaining a first number of reflected light beams with the same reflection angle;
s1016, calculating the ratio of the first quantity to the total quantity of the light beams with the set incidence angles;
s1017, judging whether the ratio exceeds a set threshold value, if so, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface. Or alternatively, the first and second heat exchangers may be,
as shown in fig. 9, step S101 includes:
s1018, emitting incident light with a set wavelength to the target surface by adopting fluorescence analysis equipment and acquiring a corresponding fluorescence image;
s1019, analyzing the fluorescent image, judging whether halogen elements exist, and if so, determining that aluminum corrosion occurs on the surface of the target; otherwise, it is determined that no aluminum corrosion of the target surface occurs.
As shown in fig. 10, the horizontal axis represents the characteristic energy of the element, the unit keV, and the vertical axis represents the relative reference value of the element at a constant voltage of an SEM electron microscope (scanning electron microscope). In the figure, C, D and E are both expressed as chlorine elements (corresponding to different energy levels), F is an oxygen element, belongs to an interference element, and G is an aluminum element, namely the aluminum corrosion of the target surface of the silicon wafer is indicated.
After the treatment method of the embodiment is adopted to treat aluminum corrosion on the silicon wafer, as shown in fig. 11, H in the figure represents an aluminum element, that is, no aluminum corrosion occurs on the target surface of the silicon wafer at this time, the generated corrosive substances are completely treated, and only the aluminum element remains, so that continuous degradation caused by continuous reaction of aluminum and halogen elements with aluminum is inhibited, and meanwhile, the effectiveness of the treatment method of wet corrosion of the embodiment is also verified.
In addition, in the embodiment, two analysis methods of image comparison and fluorescence analysis can be combined to improve the accuracy of judging whether aluminum corrosion occurs on the surface of the silicon wafer where the metal aluminum is located.
In the embodiment, whether the surface of the silicon wafer where the metal aluminum is located is corroded by the aluminum can be automatically, timely and accurately determined through image comparison and/or fluorescence analysis, namely, the corrosion phenomenon can be found at the initial stage of aluminum corrosion, and then the silicon wafer which is corroded by the aluminum is immersed into an acidic corrosive liquid for corrosion treatment, so that the mixture of the aluminum and the halogen element is rapidly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, and the continuous reaction of the halogen element and the aluminum is avoided to be continuously deteriorated, so that the reliability of the product is effectively ensured.
Example 3
As shown in fig. 12, the treatment system for aluminum corrosion of the present embodiment includes a judgment module 1, a treatment module 2, and a rinse module 3.
The judging module 1 is used for judging whether aluminum corrosion occurs on the target surface where the metal aluminum is located on the processed object, and if so, the processing module 2 is called.
Wherein the object to be processed includes, but is not limited to, a silicon wafer.
The processing module 2 is used for immersing the target surface in an acidic corrosive liquid, so that the acidic corrosive liquid and the metal aluminum perform isotropic reaction, and corrosives generated on the metal aluminum are removed.
Wherein the corrosives are a mixture containing aluminum and halogen elements.
The acidic corrosive liquid comprises 65% -85% of phosphoric acid, 5% -15% of acetic acid, 1% -5% of nitric acid, 1% -3% of fluoboric acid and 2% -5% of water.
The chemical reaction time is 1-2 minutes, and the chemical reaction rate is 180-220A/min. Preferably, the chemical reaction rate is about 200 a/min.
In addition, the length of the chemical reaction time is positively related to the thickness of the metal aluminum, and is also related to the process requirement, and if the requirement on the corrosion degree of the metal aluminum is not high, the chemical reaction time can be flexibly controlled; if it is desired that the metallic aluminum is not corroded as much as possible, it is necessary to clean the corrosive and to shorten the chemical reaction time as much as possible. The rinse module 3 is used to rinse the target surface with deionized water.
Specifically, 1) putting the silicon wafer into an etching liquid tank, fully immersing the silicon wafer into an acidic etching liquid, fully contacting and reacting metallic aluminum and corrosives on the target surface of the silicon wafer with the acidic etching liquid, and enabling the acidic etching liquid and the metallic aluminum to perform isotropic reaction, wherein the chemical reaction time is controlled to be 1 minute, and the chemical reaction rate is 200A/min, namely, the corrosives generated on the surface of an aluminum strip or on the side wall of the aluminum strip can be effectively thrown away by consuming aluminum, so that continuous deterioration caused by continuous reaction of fluorine, chlorine and the like with the aluminum is avoided. 2) And placing the reacted silicon wafer into a deionized water tank, flushing the surface where the metal aluminum is positioned by adopting deionized water, setting the flushing time of equipment to be 1 minute each time, and the flushing times to be 10 times, wherein the water flow strength can be specifically set according to the working characteristics of the equipment, so that the whole treatment process is completed. The flushing time and the flushing times can also be adjusted and set according to actual conditions.
FIG. 4 shows the surface of the silicon wafer after the etching material in FIG. 1 is removed; as shown in fig. 5, in the case of fig. 2 after the corrosive substances are removed, that is, the corrosive substances in the surface of the silicon wafer are completely removed by the treatment method of the embodiment, so that the corrosion of the metal aluminum is effectively inhibited from continuing. The scales in fig. 1, 2, 4 and 5 are all 1 um.
In the embodiment, whether the surface of the silicon wafer where the metal aluminum is located is corroded by the aluminum can be automatically, timely and accurately determined, namely, the corrosion phenomenon can be found at the initial stage of aluminum corrosion, and then the silicon wafer which is corroded by the aluminum is immersed into an acid corrosive liquid for corrosion treatment, so that the mixture of the aluminum and the halogen element is rapidly removed, namely, the metal aluminum is prevented from being further corroded by simple and effective wet treatment, and the continuous deterioration caused by the continuous reaction of the halogen element and the aluminum is avoided, so that the reliability of the product is effectively ensured.
Example 4
The aluminum corrosion treatment system of this example is a further improvement over example 3, specifically:
as shown in fig. 13, the judgment module 1 includes a target image unit 4 and a third judgment unit 5;
the target image unit 4 is used for scanning the target surface by adopting a scanning device and acquiring a target image;
the third judging unit 5 is used for judging whether the target image is consistent with the sample image, if so, determining that the aluminum corrosion does not occur on the surface of the target; otherwise, determining that aluminum corrosion occurs on the target surface. Or alternatively, the first and second heat exchangers may be,
as shown in fig. 14, the judgment module 1 includes a reflection angle acquisition unit 6 and a first judgment unit 7.
The reflection angle acquisition unit 6 is used for illuminating the target surface with at least one light beam with a set incidence angle and acquiring the reflection angle of the corresponding reflected light beam;
the first judging unit 7 is used for judging whether the reflection angle is equal to the set incidence angle, and if so, determining that the aluminum corrosion does not occur on the surface of the target; otherwise, determining that aluminum corrosion occurs on the target surface. Or alternatively, the first and second heat exchangers may be,
as shown in fig. 15, when a plurality of light beams of set incident angles are irradiated to the target surface, the judgment module 1 includes a number acquisition unit 8, a ratio calculation unit 9, and a second judgment unit 10.
The number acquisition unit 8 is configured to acquire a first number of reflected light beams having the same reflection angle;
the ratio calculating unit 9 is used for calculating the ratio of the first quantity to the total quantity of the light beams with the set incidence angle;
the second judging unit 10 is used for judging whether the ratio exceeds a set threshold value, and if so, determining that the aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface. Or alternatively, the first and second heat exchangers may be,
as shown in fig. 16, the judgment module 1 includes a fluorescent image acquisition unit 11 and a fourth judgment unit 12;
the fluorescence image acquisition unit 11 is used for transmitting incident light with a set wavelength to the target surface by adopting fluorescence analysis equipment and acquiring a corresponding fluorescence image;
the fourth judging unit 12 is used for analyzing the fluorescent image to judge whether halogen elements exist, and if so, determining that aluminum corrosion occurs on the surface of the target; otherwise, it is determined that no aluminum corrosion of the target surface occurs.
As shown in fig. 10, the horizontal axis represents the characteristic energy of the element, the unit keV, and the vertical axis represents the relative reference value of the element at a constant voltage of an SEM electron microscope (scanning electron microscope). In the figure, C, D and E are both expressed as chlorine elements (corresponding to different energy levels), F is an oxygen element, belongs to an interference element, and G is an aluminum element, namely the aluminum corrosion of the target surface of the silicon wafer is indicated.
After the treatment method of the embodiment is adopted to treat aluminum corrosion on the silicon wafer, as shown in fig. 11, H in the figure represents an aluminum element, that is, no aluminum corrosion occurs on the target surface of the silicon wafer at this time, the generated corrosive substances are completely treated, and only the aluminum element remains, so that continuous degradation caused by continuous reaction of aluminum and halogen elements with aluminum is inhibited, and meanwhile, the effectiveness of the treatment method of wet corrosion of the embodiment is also verified.
In addition, in the embodiment, two analysis methods of image comparison and fluorescence analysis can be combined to improve the accuracy of judging whether aluminum corrosion occurs on the surface of the silicon wafer where the metal aluminum is located.
In the embodiment, whether the surface of the silicon wafer where the metal aluminum is located is corroded by the aluminum can be automatically, timely and accurately determined through image comparison and/or fluorescence analysis, namely, the corrosion phenomenon can be found at the initial stage of aluminum corrosion, and then the silicon wafer which is corroded by the aluminum is immersed into an acidic corrosive liquid for corrosion treatment, so that the mixture of the aluminum and the halogen element is rapidly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, and the continuous reaction of the halogen element and the aluminum is avoided to be continuously deteriorated, so that the reliability of the product is effectively ensured.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the principles and spirit of the invention, but such changes and modifications fall within the scope of the invention.
Claims (8)
1. A method of treating aluminum corrosion, the method comprising:
s1, judging whether aluminum corrosion occurs on the target surface where the metal aluminum on the processed object is located, and if so, executing a step S2;
s2, immersing the target surface into an acidic corrosive liquid, and enabling the acidic corrosive liquid to perform isotropic reaction with the metal aluminum so as to remove corrosives generated on the metal aluminum;
the step S1 comprises the following steps:
s13, adopting at least one light beam with a set incidence angle to irradiate the target surface and obtaining the reflection angle of the corresponding reflected light beam;
s14, judging whether the reflection angle is equal to the set incidence angle, if so, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface; or alternatively, the first and second heat exchangers may be,
when a plurality of light beams with the set incidence angles are used to irradiate the target surface, the step S13 further includes:
s15, acquiring the first quantity of the reflected light beams with the same reflection angle;
s16, calculating the ratio of the first quantity to the total quantity of the light beams with the set incidence angles;
s17, judging whether the ratio exceeds a set threshold value, if so, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface.
2. The method of treating aluminum corrosion according to claim 1, further comprising, after step S2:
s3, washing the target surface by adopting deionized water.
3. The method for treating aluminum corrosion according to claim 1, wherein the acidic corrosion liquid comprises 65% -85% phosphoric acid, 5% -15% acetic acid, 1% -5% nitric acid, 1% -3% fluoroboric acid and 2% -5% water.
4. The method of claim 1, wherein the chemical reaction time in step S2 is 1 to 2 minutes, and the chemical reaction rate is 180 a/min to 220 a/min; and/or the number of the groups of groups,
the object to be processed comprises a silicon wafer.
5. The aluminum corrosion treatment system is characterized by comprising a judging module and a treatment module;
the judging module is used for judging whether aluminum corrosion occurs on the target surface where the metal aluminum is located on the processed object, and if so, the processing module is called;
the processing module is used for immersing the target surface into an acidic corrosive liquid, so that the acidic corrosive liquid and the metal aluminum perform isotropic reaction to remove corrosives generated on the metal aluminum;
the judging module comprises a reflection angle obtaining unit and a first judging unit;
the reflection angle acquisition unit is used for adopting at least one light beam with a set incidence angle to irradiate the target surface and acquiring the reflection angle of the corresponding reflection light beam;
the first judging unit is used for judging whether the reflection angle is equal to the set incidence angle or not, and if yes, determining that aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface; or alternatively, the first and second heat exchangers may be,
when a plurality of light beams with the set incidence angles are adopted to irradiate the target surface, the judging module comprises a quantity obtaining unit, a ratio calculating unit and a second judging unit;
the quantity acquisition unit is used for acquiring a first quantity of the reflected light beams with the same reflection angle;
the ratio calculating unit is used for calculating the ratio of the first quantity to the total quantity of the light beams with the set incidence angles;
the second judging unit is used for judging whether the ratio exceeds a set threshold value, and if so, determining that the aluminum corrosion does not occur on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface.
6. The aluminum corrosion treatment system of claim 5, wherein the treatment system further comprises a rinse module;
the rinsing module is used for rinsing the target surface by deionized water.
7. The aluminum corrosion treatment system of claim 5, wherein the acidic corrosion solution comprises 65% -85% phosphoric acid, 5% -15% acetic acid, 1% -5% nitric acid, 1% -3% fluoroboric acid, and 2% -5% water.
8. The aluminum corrosion processing system of claim 5, wherein the processing module has a chemical reaction time of 1 to 2 minutes for removing the corrosive species at a chemical reaction rate of 180 to 220 a/min; and/or the number of the groups of groups,
the object to be processed comprises a silicon wafer.
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