CN112858167B - Scanning method, system, medium and device for multi-row dual-energy linear array detector - Google Patents
Scanning method, system, medium and device for multi-row dual-energy linear array detector Download PDFInfo
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Abstract
The invention provides a scanning method, a system, a medium and a device for a multi-row dual-energy linear array detector, wherein the method comprises the following steps: collecting high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; the method comprises the steps of processing high-energy image data and low-energy image data by adopting a DTDI accumulation workflow based on an FPGA circuit to obtain the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector; calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness; and fusing the hue, saturation and brightness of each pixel point based on a conversion formula to generate an RGB image. The invention discloses a scanning method, a scanning system, a scanning medium and a scanning device for a multi-row linear array detector, which are used for realizing high spatial resolution under the condition of low X-ray dosage.
Description
Technical Field
The invention relates to the technical field of linear array detector detection, in particular to a scanning method, a scanning system, a scanning medium and a scanning device for a multi-row dual-energy linear array detector.
Background
Currently, in the field of food foreign matter detection, there are two trends, one is to utilize a multi-energy spectrum to realize the discrimination of substance properties, so as to improve the foreign matter recognition rate; one is to use the delay integration acquisition technique (TDI, time delay integrate) to amplify small signals and improve the signal-to-noise ratio, thereby identifying finer foreign objects. In the conventional design of the X-ray linear array detector for detecting the foreign matters in food, monocrystalline silicon is used as a photodiode for receiving visible light, and the price and the performance are balanced; furthermore, pixel size requirements are typically standardized to 0.4mm. That is, the common types of line scan X-ray detectors, all single row 0.4mm pitch single crystal silicon linear arrays, clearly suffer from several drawbacks:
1. under the consideration of cost factors, the linear array detector is basically in a single-energy form, and foreign matters can be judged only through the change of gray values, so that risks of missed judgment and misjudgment exist.
2. Most of them have no substance property recognition capability, resulting in an increased difficulty in recognizing foreign substances of a thin object at a low density.
3. The one-dimensional single-row linear array has the advantages that the pixels are generally standard 0.4mm, the requirements of the ray sources are high, high mA exposure under a certain kV is needed to realize high signal to noise ratio, the high-power ray sources are needed, and the one-dimensional single-row linear array has good heat radiator and scheme, so that the system cost is increased, and the stability and durability of the system are reduced.
4. Because of the limitation of a mechanical structure, the size compression is required in the width and the height, so that the dual-energy substance attribute discrimination and the sensor technology of multiple rows of TDIs are difficult to combine into one for subsystem design and development, and meanwhile, the two technologies are realized, the price is high, and the market competitiveness is insufficient.
5. For meat products, the bone fragments are detected, the defect of single energy is obvious, the high-level identification and elimination cannot be realized, and the dual-energy fusion, subtraction contrast enhancement and substance identification are more advantageous.
6. The wafer (wafer) of monocrystalline silicon is mainly 8 inches, and currently, in the field of food foreign matter detection, FSI (front irradiation process, front side irradiation) is basically adopted, so that smaller pixels and more rows of designs cannot be realized. Under the constraint of a collimation width after 3.2mm, 4 rows can be realized under the condition of 0.4mm pitch by a common FSI process. With BSI technology, 8 rows can be implemented at 0.4mm pitch.
It is therefore desirable to be able to solve the problem of how to increase the resolution of a linear array detector at low cost.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method, a system, a medium and a device for scanning a multi-row dual-energy linear array detector, which are used for solving the problem of improving the resolution of the linear array detector under the condition of low cost in the prior art.
To achieve the above and other related objects, the present invention provides a scanning method of a multi-row dual-energy linear array detector, comprising the steps of: collecting high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; the monocrystalline silicon multi-row dual-energy linear array detector comprises: the single crystal silicon low-energy PD module of more than or equal to four rows, the single crystal silicon high-energy PD module of more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper for filtering, the single crystal silicon low-energy PD module of more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module of more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD modules with the power higher than or equal to four rows, the monocrystalline silicon high-energy PD modules with the power higher than or equal to four rows, the reading chip and the connector are all electrically connected on the PCB; the method comprises the steps of processing high-energy image data and low-energy image data by adopting a DTDI accumulation workflow based on an FPGA circuit to obtain the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector; calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness; and fusing the hue, saturation and brightness of each pixel point based on a conversion formula to generate an RGB image.
In order to achieve the above object, the present invention further provides a multi-row dual-energy linear array detector scanning system, including: the device comprises an acquisition module, an accumulation module, a calculation module and a generation module;
the acquisition module is used for acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; the monocrystalline silicon multi-row dual-energy linear array detector comprises: the single crystal silicon low-energy PD module of more than or equal to four rows, the single crystal silicon high-energy PD module of more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper for filtering, the single crystal silicon low-energy PD module of more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module of more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD modules with the power higher than or equal to four rows, the monocrystalline silicon high-energy PD modules with the power higher than or equal to four rows, the reading chip and the connector are all electrically connected on the PCB; the accumulation module is used for processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation workflow based on an FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector; the calculation module is used for calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness; the generating module is used for fusing the hue, the saturation and the brightness of each pixel point based on a conversion formula to generate an RGB image.
To achieve the above object, the present invention also provides a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements any of the above-described multi-row line detector scanning methods.
In order to achieve the above object, the present invention further provides a scanning device for a multi-row linear array detector, including: a processor and a memory; the memory is used for storing a computer program; the processor is connected with the memory and is used for executing the computer program stored in the memory so as to enable the multi-row linear array detector scanning device to execute any multi-row linear array detector scanning method.
Finally, the invention also provides a multi-row linear array detector scanning system, which comprises a multi-row linear array detector scanning device and an FPGA circuit; the multi-row linear array detector scanning device comprises: the PCB comprises four or more rows of monocrystalline silicon low-energy PD modules, four or more rows of monocrystalline silicon high-energy PD modules, a reading chip, a connector and a PCB with a middle layer as a filter layer, wherein the four or more rows of monocrystalline silicon low-energy PD modules are arranged on one side of the PCB, and the four or more rows of monocrystalline silicon high-energy PD modules are arranged on the other side of the PCB; the monocrystalline silicon low-energy PD modules with the height greater than or equal to four rows, the monocrystalline silicon high-energy PD modules with the height greater than or equal to four rows, the reading chip and the connector are electrically connected with the PCB; the FPGA circuit is used for realizing the splicing, packaging and uploading of the high-energy image data and the low-energy image data to the upper computer.
As described above, the scanning method, the scanning system, the scanning medium and the scanning device for the multi-row linear array detector have the following beneficial effects: for achieving high spatial resolution at low X-ray doses.
Drawings
FIG. 1a is a flow chart of a scanning method of a multi-row dual-energy linear array detector according to an embodiment of the invention;
FIG. 1b is a flow chart of a scanning method of a multi-row dual-energy linear array detector according to another embodiment of the present invention;
FIG. 1c is a flow chart of a scanning method of a multi-row dual-energy linear array detector according to another embodiment of the present invention;
FIG. 2 is a schematic diagram of a scanning system of a multi-row dual-energy linear array detector according to an embodiment of the invention;
FIG. 3 is a schematic diagram showing a scanning device of a multi-row dual-energy linear array detector according to an embodiment of the invention;
FIG. 4a is a schematic diagram showing a scanning device of a multi-row dual-energy linear array detector according to another embodiment of the scanning system of the present invention;
FIG. 4b is a side view of a scanning device for a multi-row dual-energy linear array detector according to another embodiment of the scanning system for a multi-row dual-energy linear array detector of the present invention;
FIG. 4c is a schematic diagram showing a scanning system of a multi-row dual-energy linear array detector according to another embodiment of the present invention;
FIG. 4d is a flow chart of a scanning system of a multi-row dual-energy linear array detector according to another embodiment of the invention
Description of element reference numerals
21. Acquisition module
22. Accumulation module
23. Calculation module
24. Generating module
31. Processor and method for controlling the same
32. Memory device
4. Double PD module
41. Monocrystalline silicon low-energy PD module
42. Monocrystalline silicon high-energy PD module
43. Reading chip
44. Connector with a plurality of connectors
45. PCB board with middle layer embedded with copper for filtering
5 FPGA circuit
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present invention by way of illustration, so that only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
The scanning method, the scanning system, the scanning medium and the scanning device of the multi-row dual-energy linear array detector are used for realizing high spatial resolution under the condition of low X-ray dosage.
As shown in fig. 1a, in an embodiment, the scanning method of the multi-row dual-energy linear array detector of the present invention includes the following steps:
s11, acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; the monocrystalline silicon multi-row dual-energy linear array detector comprises: the single crystal silicon low-energy PD module of more than or equal to four rows, the single crystal silicon high-energy PD module of more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper for filtering, the single crystal silicon low-energy PD module of more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module of more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD modules with the power higher than or equal to four rows, the monocrystalline silicon high-energy PD modules with the power higher than or equal to four rows, the reading chip and the connector are all electrically connected on the PCB.
And step S12, processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation workflow based on an FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector.
Specifically, the processing the high-energy image data and the low-energy image data by adopting the DTDI (digital time delay integrate) accumulation workflow based on the FPGA circuit to obtain the high-energy detector output signal intensity and the low-energy detector output signal intensity includes: the FPGA circuit opens a plurality of cache spaces and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and the adder is used for realizing signal accumulation of the same target information, and outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector after the accumulation of a preset level is completed. As shown in fig. 1b, high-energy image data and low-energy image data are acquired using a plurality of single-crystal silicon multi-row dual-energy linear array detectors; the monocrystalline silicon multi-row dual-energy linear array detector comprises: eight rows of monocrystalline silicon low-energy PD modules and eight rows of monocrystalline silicon high-energy PD modules. The FPGA circuit opens a plurality of cache spaces and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and the adder is used for realizing signal accumulation of the same target information, and outputting the output signal intensity of one frame of high-energy detector or the output signal intensity of the low-energy detector after the accumulation of the preset eight layers is completed. The output 8A is the first in fig. 1 b. With an FPGA circuit as an operation core, DTDI (digital integration delay) is realized: the FPGA circuit opens a plurality of cache spaces for storing each row of data; the signal accumulation of the same target information is realized through an adder; after the 8-stage accumulation is completed, outputting one frame (one line) of data; because the calculation is performed in the FPGA circuit, the time consumption is little, and the high-speed characteristic of the single-row linear array can still be achieved; with the DTDI-post data, the signal-to-noise ratio is improved, the contrast is enhanced, and foreign objects or abnormal gaps are more easily observed from the gray scale image.
And S13, calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness.
Specifically, the calculating the transparency of each pixel channel based on the high-energy detector output signal intensity and the low-energy detector output signal intensity by using a mapping formula, and converting the transparency into the hue, the saturation and the brightness includes: collecting the output signal intensity of an empty high-energy detector and the output signal intensity of an empty low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors during empty; collecting the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with a first atomic number and a second atomic number, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number; collecting the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of an object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency of the object to be detected; and calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in the boundary curve coordinate system.
Specifically, the output signal intensity of an empty high-energy detector and the output signal intensity of an empty low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors during empty are collected.
The output signal intensity of the empty high-energy detector is I 0H And the output signal intensity of the empty low-energy detector is I 0L . Wherein: i H 、I L The signal intensity output by the high-energy detector and the signal intensity output by the low-energy detector are respectively; i 0H 、I 0L The output signal intensity of the empty high-energy detector and the output signal intensity of the empty low-energy detector are respectively; mu (mu) (E,Z) A line attenuation coefficient of the detected object; z is the atomic number of the detected object; t is the thickness of the detected object along the ray direction; e (E) H 、E L The energy of the X-rays received by the high and low energy detectors, respectively.
And acquiring the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of the two critical substances with the first atomic number and the second atomic number, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number. Specifically, the first atomic number is 10 and the second atomic number is 18. And calculating the high-energy detector output signal intensity and the low-energy detector output signal intensity of two critical substances with atomic numbers Z=10 and Z=18, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances, and fitting a boundary curve by using a polynomial. T (T) H For high energy transparency, T L Is low energy transparency. A first atomic number of10 and the different thicknesses of the detected first atomic number 10 material are fitted to a boundary curve of the first atomic number 10 material using a polynomial, and the second atomic number 18 high and low energy transparency and the different thicknesses of the detected second atomic number 18 material are fitted to a boundary curve of the second atomic number 18 material using a polynomial. The boundary curve can be formed by fitting different thicknesses of the detected first material with the atomic number of 10 to the x-axis, and the ratio of the high-energy transparency to the low-energy transparency of the detected first material with the atomic number of 10 to the y-axis, so as to obtain the boundary curve of the first material with the atomic number of 10. The boundary curve may be fitted by measuring the different thickness of the second 18 atomic number substance as the x-axis and measuring the ratio of the high energy transparency to the low energy transparency of the second 18 atomic number substance as the y-axis to obtain the boundary curve of the second 18 atomic number substance. And overlapping the two boundary curves to obtain boundary curves of two critical substances.
The following formula is a high and low energy transparency calculation formula:
And collecting the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector of the object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency of the object to be detected. Calculating the output signal intensity I of the high-energy detector of the object to be detected based on the following formula H And low energy detector output signal strength I L 。
The corresponding T is calculated based on the following formula H High energy transparency and T L Low energy transparency.
And calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in the boundary curve coordinate system. The positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in the boundary curve coordinate system refer to the positions of the high-energy transparency and the low-energy transparency obtained by adopting the same fitting method in the boundary curve coordinate system. For example, the boundary curve may be fitted by measuring the different thickness of the first atomic number 10 material as the x-axis, and measuring the ratio of the high energy transparency to the low energy transparency of the first atomic number 10 material as the y-axis, to obtain the boundary curve of the first atomic number 10 material. And then, according to the position in the boundary curve coordinate system where the ratio of the corresponding high-energy transparency and the low-energy transparency of the object to be detected is located. And calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode.
Hue calculation: first, defining different hue ranges for each region, wherein the hue range of the organic matter region is R 1 -R 2 The mixture is G 1 -G 2 The inorganic matters are B1-B2; taking the example of (TH, TL) falling in the mixture zone,
the hue H calculation formula is:
the hue H of the organic matters is calculated by the following formula:
the hue H of the inorganic substance is calculated by the following formula:
saturation calculation
S＝S 0 +(1-S 0 )(T H +T L )/2
Wherein S is 0 The saturation reference value is to prevent the pixels with low gray scale from becoming gray because of too low saturation.
Brightness calculation
And S14, fusing the hue, the saturation and the brightness of each pixel point based on a conversion formula to generate an RGB image.
Specifically, an image rendering algorithm based on the HSB color mode fuses the hue, saturation and brightness of each pixel point to generate an RGB image. The conversion formula is an existing conversion formula.
Specifically, the principle of contrast enhancement is shown in fig. 1 c. The radiation source still adopts a single source, a narrow fan-shaped beam is supplied to a plurality of monocrystalline silicon multi-row dual-energy linear array detectors through a collimation slit, and the monocrystalline silicon multi-row dual-energy linear array detectors acquire high-energy image data and low-energy image data through one-time exposure; then, the two images are processed by an online algorithm computing technology, an interested target is extracted, and foreign matters are identified. The principle of the algorithm is that the intensity performance of the high-energy image and the low-energy image is different due to the fact that the transmission efficiency of different materials to X-rays is different; the intensity level is adjusted according to the ratio therebetween, and then unnecessary parts are subtracted to extract the target material information. Through a contrast change algorithm, dual-energy subtraction is realized, non-interested background information is subtracted, and a target area is subjected to contrast improvement, so that finer foreign matters are identified; through calculation and conversion of dual-energy data, after the X-ray perspective technology and the dual-energy technology are fused, the equivalent atomic numbers of the substances at any positions can be obtained, and color coding is provided according to different atomic numbers of the substances: firstly, calculating an R value according to high and low energy data of a dual-energy transmission image of a known substance, and coloring an object through the R value; secondly, establishing a mathematical model for converting gray data into an HSB color space, and converting the HSB color space into an RGB color space based on an HSB-to-RGB formula; finally, through dual energy, the problem that the small objects with low density are difficult to identify is solved, and accurate grabbing identification can be performed through the color difference.
As shown in fig. 2, in an embodiment, the multi-row dual-energy linear array detector scanning system of the present invention includes an acquisition module 21, an accumulation module 22, a calculation module 23 and a generation module 24; the acquisition module is used for acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; the monocrystalline silicon multi-row dual-energy linear array detector comprises: the single crystal silicon low-energy PD module of more than or equal to four rows, the single crystal silicon high-energy PD module of more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper for filtering, the single crystal silicon low-energy PD module of more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module of more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD modules with the power higher than or equal to four rows, the monocrystalline silicon high-energy PD modules with the power higher than or equal to four rows, the reading chip and the connector are all electrically connected on the PCB; the accumulation module is used for processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation workflow based on an FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector; the calculation module is used for calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness; the generating module is used for fusing the hue, the saturation and the brightness of each pixel point based on a conversion formula to generate an RGB image.
Specifically, the accumulating module is configured to process the high-energy image data and the low-energy image data by using a DTDI accumulating workflow based on an FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and the steps include: the FPGA circuit opens a plurality of cache spaces and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and the adder is used for realizing signal accumulation of the same target information, and outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector after the accumulation of a preset level is completed.
Specifically, the calculating module is configured to calculate, based on the high-energy detector output signal intensity and the low-energy detector output signal intensity, a transparency of each pixel point using a mapping formula, and converting the transparency into a hue, a saturation, and a brightness includes: collecting the output signal intensity of an empty high-energy detector and the output signal intensity of an empty low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors during empty; collecting the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with a first atomic number and a second atomic number, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number; collecting the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of an object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency of the object to be detected; and calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in the boundary curve coordinate system.
It should be noted that, the structures and principles of the acquisition module 21, the accumulation module 22, the calculation module 23 and the generation module 24 are in one-to-one correspondence with the steps in the scanning method of the multi-row linear array detector, so that the description thereof is omitted herein.
It should be noted that, it should be understood that the division of the modules of the above system is merely a division of a logic function, and may be fully or partially integrated into a physical entity or may be physically separated. And these modules may all be implemented in software in the form of calls by the processing element; or can be realized in hardware; the method can also be realized in a form of calling software by a processing element, and the method can be realized in a form of hardware by a part of modules. For example, the x module may be a processing element that is set up separately, may be implemented in a chip of the apparatus, or may be stored in a memory of the apparatus in the form of program code, and the function of the x module may be called and executed by a processing element of the apparatus. The implementation of the other modules is similar. In addition, all or part of the modules can be integrated together or can be independently implemented. The processing element described herein may be an integrated circuit having signal processing capabilities. In implementation, each step of the above method or each module above may be implemented by an integrated logic circuit of hardware in a processor element or an instruction in a software form.
For example, the modules above may be one or more integrated circuits configured to implement the methods above, such as: one or more application specific integrated circuits (Application Specific Integrated Circuit, abbreviated as ASIC), or one or more microprocessors (Micro Processor Uint, abbreviated as MPU), or one or more field programmable gate arrays (Field Programmable Gate Array, abbreviated as FPGA circuits), or the like. For another example, when a module above is implemented in the form of a processing element scheduler code, the processing element may be a general-purpose processor, such as a central processing unit (Central Processing Unit, CPU) or other processor that may invoke the program code. For another example, the modules may be integrated together and implemented in the form of a system-on-a-chip (SOC).
In an embodiment of the present invention, the present invention further includes a computer readable storage medium having a computer program stored thereon, where the program when executed by a processor implements any of the above-mentioned multi-row dual-energy linear array detector scanning methods.
Those of ordinary skill in the art will appreciate that: all or part of the steps for implementing the method embodiments described above may be performed by computer program related hardware. The aforementioned computer program may be stored in a computer readable storage medium. The program, when executed, performs steps including the method embodiments described above; and the aforementioned storage medium includes: various media that can store program code, such as ROM, RAM, magnetic or optical disks.
As shown in fig. 3, in an embodiment, the multi-row dual-energy linear array detector scanning apparatus of the present invention includes: a processor 31 and a memory 32; the memory 32 is used for storing a computer program; the processor 31 is connected to the memory 32, and is configured to execute a computer program stored in the memory 32, so that the multi-row dual-energy linear array detector scanning device executes any one of the multi-row linear array detector scanning methods.
Specifically, the memory 32 includes: various media capable of storing program codes, such as ROM, RAM, magnetic disk, U-disk, memory card, or optical disk.
Preferably, the processor 31 may be a general-purpose processor, including a central processing unit (Central Processing Unit, abbreviated as CPU), a network processor (Network Processor, abbreviated as NP), etc.; but also digital signal processors (Digital Signal Processor, DSP for short), application specific integrated circuits (Application Specific Integrated Circuit, ASIC for short), field programmable gate arrays (Field Programmable Gate Array, FPGA for short) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.
Specifically, as shown in fig. 4a-4b, the single crystal silicon multi-row dual-energy linear array detector (dual-row PD module 4) includes: the high-energy single crystal silicon PD module comprises four or more rows of single crystal silicon low-energy PD modules 41 (L-PDM), four or more rows of single crystal silicon high-energy PD modules 42 (H-PDM), a read-out chip 43 (readout integrated circuit, ROIC), a connector 44 (connector) and a PCB board 45 with an intermediate layer embedded with copper for filtering, wherein the four or more rows of single crystal silicon low-energy PD modules 41 are arranged on one side of the PCB board, and the four or more rows of single crystal silicon high-energy PD modules 42 are arranged on the other side of the PCB board; the monocrystalline silicon low-energy PD modules 41, 42, the readout chip 43 and the connector 44 which are more than or equal to four rows are all electrically connected on the PCB board. For example: the monocrystalline silicon low-energy PD modules 41 of four rows or more may be: four rows of monocrystalline silicon low-energy PD modules, six rows of monocrystalline silicon low-energy PD modules or eight rows of monocrystalline silicon low-energy PD modules. The low energy PD module is low energy photodiode module (L-PDM), and the high energy PD module is high energy photodiode module (H-PDM). The intermediate layer is copper sheet 451. The monocrystalline silicon low-energy PD modules 41 and 42 with the size greater than or equal to four rows are used for transmitting information to the readout chip 43, the reading chip transmits the information to the connector 44, so that the connector 44 forwards the information to the FPGA circuit 5, the FPGA circuit 5 opens a plurality of buffer spaces, and data of the monocrystalline silicon low-energy PD modules and the monocrystalline silicon high-energy PD modules 42 in each row are respectively stored; and the adder is used for realizing signal accumulation of the same target information, and outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector after the accumulation of a preset level is completed.
The two-path PD sensor is designed to be a monocrystalline silicon low-energy PD module 41 (L-PDM) with the size larger than or equal to four rows and a monocrystalline silicon high-energy PD module 42 (H-PDM) with the size larger than or equal to four rows, can sense two X-ray energy spectrums (soft rays and hard rays), is based on the fact that the slit size of a collimator is between 0.3 and 0.5mm after a complete machine system, and is designed to be a PD module of a pitch=0.4 mm in principle, and the PD module of a monocrystalline silicon PD scheme with the size larger than or equal to 8 rows is the standard pixel size for detecting food foreign matters. PD (photodiode) senses that visible light information is converted into corresponding electric signals, and the two paths of PD modules do not directly convert X-ray signals. Thus, by different selection of the two scintillator materials (based on different absorption-conversion characteristics of the X-ray), the conversion of the X-ray of the two spectra into visible light is achieved. The upper monocrystalline silicon low-energy PD module is not completely and thoroughly absorbed and converted into soft X-ray, and the low-energy level X-ray is further isolated through a filtering copper sheet with a certain thickness (the thickness is generally between 0.1 and 0.6 mm), so that the high-energy level X-ray is ensured to be absorbed and converted by the high-energy PD module, the calculation of the equivalent atomic number of the material attribute by a dual-energy algorithm is improved, and the accurate material attribute identification (organic matters, inorganic matters or mixtures) is realized. The ROIC (readout chip 43) adopts 256 channels, and can receive analog information input (2×128 channels) of every two rows of pixels, so as to implement signal acquisition, integration amplification and a/D conversion, and at the same time, transmit the digital signal to the signal processing circuit through the connector for further processing of the image. All pixel channels are independent, and meanwhile, signals are collected and converted, so that high-speed and parallel processing is realized, the detection of a moving object is ensured, distortion, dislocation and delay are avoided, and the accuracy and the effectiveness of calculation are ensured.
As shown in fig. 4c, the multi-row dual-energy linear array detector scanning system includes: a plurality of monocrystalline silicon multi-row dual-energy linear array detectors (double-row PD modules 4) and an FPGA circuit 5. The FPGA circuit 5 is used for splicing, packaging and uploading high-energy image data and low-energy image data to upper computer software, and the FPGA circuit 5 is used for opening a plurality of cache spaces and respectively storing data of the monocrystalline silicon low-energy PD module 41 and the monocrystalline silicon high-energy PD module 42 of each row; and the adder is used for realizing signal accumulation of the same target information, and outputting the output signal intensity of a frame of high-energy detector or the output signal intensity of a low-energy detector after the accumulation of a preset level is completed. And outputting the output signal intensity of the high-energy detector or the output signal intensity of the low-energy detector to a PC (host computer).
The electronic circuit of the multi-row dual-energy linear array detector scanning system is shown as 4 c. The core of the hardware innovation design is that the modularization of each processing unit is realized, and the mutual instruction signals and data signals are distributed in LVDS, so that the stability and the high speed are ensured. PD sensor board, integrated PD module, ROIC, guarantee all channel's signal is gathered, integration amplification, A/D conversion at the same time; the control of the read board to the PD sensor board is realized by using the FPC through a connector interface, one of the two functions is that the ROIC is controlled to work through instructions, and the other is that the parallel transmission of multiple paths of digital signals is realized through the LVDS technology; after the read board realizes the data splicing, multiplexing and parallel transmission are performed by utilizing an LVDS data transmission technology, and the packing and uploading work is completed on the core board; the Core board provides a power supply scheme to ensure the working voltage of each module; the FPGA circuit 5 includes, in a modular design, a PD sensor board (single crystal silicon multi-row dual-energy linear array detector), a readboard (readout board), and a core board (core board): read board and core board. The system is beneficial to system stability, reduces power consumption, and realizes the application of different detection sizes, namely the platform concept, through the combination of different numbers.
In the FPGA circuit, signal superposition is carried out based on configured M-level parameters, the superposition mode is carried out according to a Row superposition and Row shifting method, and the same information points are accumulated for M times to be output; when the running direction of the transmission belt is changed, the starting point of TDI is also different, turning accumulation is needed, and the splicing direction is required to be consistent with the Scan direction; once N exposures have been made in one job, the final image forms an image height of n+m-1, as shown in the 8-exposure 8-level TDI example shown in fig. 4d below.
The invention is based on monocrystalline silicon sensor technology, utilizes BSI packaging technology to realize application of multiple rows of small pixel sizes, and can fully cover various small-size foreign matters and detect with low density. Based on the DTDI technology, the delay accumulation of the ray energy is realized, the signal to noise ratio is improved, the performance energy of the bulb tube is reduced (the power consumption requirements of the whole machine on heat dissipation and the bulb tube are reduced), the protection level is reduced, the equipment is more stable, the durability is better, the image is clearer, and the misjudgment rate of the algorithm foreign matter elimination is reduced. Synchronously, the high-low sensors are utilized to absorb and convert two energy levels of the ray energy spectrum, meanwhile, dual-energy data are collected, the target image is colored, real-time discrimination of the material attribute is realized, and the depth and width of foreign object attribute identification are expanded. The sensor technology and the electronics technology of the dual-energy and TDI discrimination technologies are integrated and synchronously realized in one subsystem, so that the accuracy of data, the real-time performance and the high efficiency of discrimination are ensured, the cost of products is greatly reduced, and the cost performance is improved.
Summarizing, the following is true: the method is suitable for detecting foreign matters or defects of various doors, and particularly for detecting high frame rate. A product can be basically fully covered, for example, the dual-energy technology can be used only one of the two according to the use requirement, and a customer can flexibly select. The signal detection of the two technical principles is realized, the recognition capability is improved, and the contrast image of the image is enhanced (the signal-to-noise ratio of the image is better). The two technical means, hardware integration, good system stability, accord with the characteristics of 'small and exquisite' of detector, not only can cover food foreign matter detection, also can cover industry nondestructive detection, and quality level judgement of industry products such as daily necessities, bedding, etc., and holistic application scope is wider, realizes the multi-purpose target of a tractor. On the hardware circuit, a combined and modularized design is adopted, when one module is touched to be abnormal, the module can be replaced by a standby piece, so that the maintenance time and the cost are reduced, and the on-site support of a maintenance engineer is not needed.
The invention solves the problems that some application scene pain points which cannot be automatically identified and removed exist in the current food foreign matter detection field, and can realize the opening or closing of functions through software setting, so that the detection targeting is more definite.
In summary, the scanning method, system, medium and device of the multi-row dual-energy linear array detector of the invention are used for realizing high spatial resolution under the condition of low X-ray dose. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (8)
1. The scanning method of the multi-row dual-energy linear array detector is characterized by comprising the following steps of:
collecting high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; the monocrystalline silicon multi-row dual-energy linear array detector comprises: the single crystal silicon low-energy PD module of more than or equal to four rows, the single crystal silicon high-energy PD module of more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper for filtering, the single crystal silicon low-energy PD module of more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module of more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD modules with the power higher than or equal to four rows, the monocrystalline silicon high-energy PD modules with the power higher than or equal to four rows, the reading chip and the connector are all electrically connected on the PCB;
The method comprises the steps of processing high-energy image data and low-energy image data by adopting a DTDI accumulation workflow based on an FPGA circuit to obtain the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector;
calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness;
fusing the hue, saturation and brightness of each pixel point based on a conversion formula to generate an RGB image;
the processing of the high-energy image data and the low-energy image data to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector by adopting the DTDI accumulation workflow based on the FPGA circuit comprises the following steps:
the FPGA circuit opens a plurality of cache spaces and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and (3) signal accumulation of the same target information is realized in the FPGA circuit through an adder based on the configured M-level parameters, and after accumulation of a preset level is completed, the output signal intensity of a frame of high-energy detector or the output signal intensity of a frame of low-energy detector is output.
2. The method of claim 1, wherein calculating the transparency of each pixel channel based on the high-energy detector output signal intensity and the low-energy detector output signal intensity using a mapping formula, and converting the transparency into hue, saturation, and brightness comprises:
Collecting the output signal intensity of an empty high-energy detector and the output signal intensity of an empty low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors during empty;
collecting the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with a first atomic number and a second atomic number, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number;
collecting the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of an object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency of the object to be detected;
and calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in the boundary curve coordinate system.
3. The method of claim 2, wherein the first atomic number is 10 and the second atomic number is 18.
4. A multi-row dual-energy linear array detector scanning system, comprising: the device comprises an acquisition module, an accumulation module, a calculation module and a generation module;
The acquisition module is used for acquiring high-energy image data and low-energy image data by using a plurality of monocrystalline silicon multi-row dual-energy linear array detectors; the monocrystalline silicon multi-row dual-energy linear array detector comprises: the single crystal silicon low-energy PD module of more than or equal to four rows, the single crystal silicon high-energy PD module of more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper for filtering, the single crystal silicon low-energy PD module of more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module of more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD modules with the power higher than or equal to four rows, the monocrystalline silicon high-energy PD modules with the power higher than or equal to four rows, the reading chip and the connector are all electrically connected on the PCB;
the accumulation module is used for processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation workflow based on an FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector;
the calculation module is used for calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness;
The generating module is used for fusing the hue, saturation and brightness of each pixel point based on a conversion formula to generate an RGB image;
the accumulation module is used for processing the high-energy image data and the low-energy image data by adopting a DTDI accumulation workflow based on an FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and comprises the following steps:
the FPGA circuit opens a plurality of cache spaces and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and (3) signal accumulation of the same target information is realized in the FPGA circuit through an adder based on the configured M-level parameters, and after accumulation of a preset level is completed, the output signal intensity of a frame of high-energy detector or the output signal intensity of a frame of low-energy detector is output.
5. The multi-row dual-energy linear array detector scanning system of claim 4, wherein the computing module is configured to calculate a transparency of each pixel point using a mapping formula based on the high-energy detector output signal intensity and the low-energy detector output signal intensity, and converting the transparency to a hue, a saturation, and a brightness comprises:
collecting the output signal intensity of an empty high-energy detector and the output signal intensity of an empty low-energy detector of a plurality of monocrystalline silicon multi-row dual-energy linear array detectors during empty;
Collecting the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of two critical substances with a first atomic number and a second atomic number, respectively calculating the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number, and fitting a boundary curve based on the high-energy transparency and the low-energy transparency of the two critical substances with the first atomic number and the second atomic number;
collecting the output signal intensity of a high-energy detector and the output signal intensity of a low-energy detector of an object to be detected, and calculating the corresponding high-energy transparency and low-energy transparency of the object to be detected;
and calculating the hue, saturation and brightness of each pixel point by adopting a hue, saturation and brightness calculation mode according to the positions of the high-energy transparency and the low-energy transparency corresponding to each pixel point in the boundary curve coordinate system.
6. A computer readable storage medium having a computer program stored thereon, wherein the computer program is executed by a processor to implement the multi-row dual energy linear array detector scanning method of any one of claims 1 to 3.
7. A multi-row dual-energy linear array detector scanning device, comprising: a processor and a memory;
the memory is used for storing a computer program;
The processor is connected to the memory, and is configured to execute a computer program stored in the memory, so that the multi-row linear array detector scanning apparatus performs the multi-row linear array detector scanning method according to any one of claims 1 to 3.
8. The multi-row dual-energy linear array detector scanning system is characterized by comprising a multi-row dual-energy linear array detector scanning device and an FPGA circuit;
the multi-row dual-energy linear array detector scanning device comprises: the single crystal silicon low-energy PD module of more than or equal to four rows, the single crystal silicon high-energy PD module of more than or equal to four rows, the reading chip, the connector and the middle layer are PCB boards embedded with copper for filtering, the single crystal silicon low-energy PD module of more than or equal to four rows is arranged on one side of the PCB boards, and the single crystal silicon high-energy PD module of more than or equal to four rows is arranged on the other side of the PCB boards; the monocrystalline silicon low-energy PD modules with the power higher than or equal to four rows, the monocrystalline silicon high-energy PD modules with the power higher than or equal to four rows, the reading chip and the connector are all electrically connected on the PCB;
the FPGA circuit is used for realizing the splicing, packaging and uploading of the high-energy image data and the low-energy image data to the upper computer software for image post-processing;
The FPGA circuit is used for realizing the splicing, packaging and uploading of the high-energy image data and the low-energy image data to the upper computer software for image post-processing, and comprises the following steps:
processing the high-energy image data and the low-energy image data based on a DTDI accumulation workflow of the FPGA circuit to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector;
calculating the transparency of each pixel point by adopting a mapping formula based on the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector, and converting the transparency into hue, saturation and brightness;
fusing the hue, saturation and brightness of each pixel point based on a conversion formula to generate an RGB image;
the processing of the high-energy image data and the low-energy image data to obtain the output signal intensity of the high-energy detector and the output signal intensity of the low-energy detector by adopting the DTDI accumulation workflow based on the FPGA circuit comprises the following steps:
the FPGA circuit opens a plurality of cache spaces and respectively stores data of the monocrystalline silicon low-energy PD module and the monocrystalline silicon high-energy PD module in each row; and (3) signal accumulation of the same target information is realized in the FPGA circuit through an adder based on the configured M-level parameters, and after accumulation of a preset level is completed, the output signal intensity of a frame of high-energy detector or the output signal intensity of a frame of low-energy detector is output.
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