CN112838134B - Copper indium gallium selenium thin film solar cell and preparation method thereof - Google Patents

Copper indium gallium selenium thin film solar cell and preparation method thereof Download PDF

Info

Publication number
CN112838134B
CN112838134B CN202110098410.4A CN202110098410A CN112838134B CN 112838134 B CN112838134 B CN 112838134B CN 202110098410 A CN202110098410 A CN 202110098410A CN 112838134 B CN112838134 B CN 112838134B
Authority
CN
China
Prior art keywords
layer
indium gallium
copper indium
back electrode
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110098410.4A
Other languages
Chinese (zh)
Other versions
CN112838134A (en
Inventor
王正安
来华杭
郭峰
俞峰
周海龙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Shangfang Electronic Equipment Co ltd
Original Assignee
Zhejiang Shangfang Electronic Equipment Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Shangfang Electronic Equipment Co ltd filed Critical Zhejiang Shangfang Electronic Equipment Co ltd
Priority to CN202110098410.4A priority Critical patent/CN112838134B/en
Publication of CN112838134A publication Critical patent/CN112838134A/en
Application granted granted Critical
Publication of CN112838134B publication Critical patent/CN112838134B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The application discloses a copper indium gallium selenium thin film solar cell and a preparation method thereof, wherein the copper indium gallium selenium thin film solar cell comprises: the copper indium gallium selenide solar cell comprises a substrate, a molybdenum back electrode layer, a copper indium gallium selenide absorption layer, a buffer layer and a window layer which are sequentially arranged from bottom to top, wherein the molybdenum back electrode layer is positioned in the copper indium gallium selenide absorption layer, the thickness of the copper indium gallium selenide absorption layer is 2.3-3 mu m, the thickness of the molybdenum back electrode layer is 1.9-2.1 mu m, the molybdenum back electrode layer is provided with hollowed-out areas allowing light to pass through, the hollowed-out areas are regularly arranged, and the area of each hollowed-out area is 14-25 mu m 2 . The copper indium gallium selenide thin film solar cell provided by the application can absorb about 50% -70% of back light to generate electricity, and the photoelectric conversion efficiency is improved.

Description

Copper indium gallium selenium thin film solar cell and preparation method thereof
Technical Field
The application relates to the technical field of photovoltaics, in particular to a copper indium gallium diselenide thin film solar cell and a preparation method thereof.
Background
In the prior art, the structure of the copper indium gallium diselenide thin film solar cell is shown in fig. 1, and the main structure of the cell is as follows from bottom to top: a substrate 1, a silicon nitride barrier layer 2 (SiNx), a molybdenum back electrode layer 3 (Mo), a copper indium gallium selenium absorber layer 4 (CIGS), a cadmium sulfide buffer layer 5 (CdS), an intrinsic zinc oxide window layer 6 (i-ZnO) and an aluminum doped zinc oxide window layer 7 (AZO).
The functions of the layers are simply expressed as follows:
a) The substrate 1 mainly provides support for the battery device. Conventional substrates typically use float Glass, i.e., glass substrates (Glass) typically have a thickness of 2-5mm, corresponding devices typically are used in the building photovoltaic integration field, and specific flexible devices typically use stainless steel sheets as the substrate material, 0.1-0.5mm thick.
b) The silicon nitride barrier layer 2 is mainly used for blocking impurity ions (metal ions such as sodium, calcium, iron and the like) in the glass substrate from entering the battery device to influence the performance of the battery, and the stainless steel substrate uses chromium metal as the barrier layer, and the thickness of the silicon nitride barrier layer is 100-200nm.
c) The molybdenum back electrode layer 3 exists as a back electrode of the device and is positioned on one side of the P-type semiconductor material to provide a path for the directional movement of electrons, and the thickness of the molybdenum back electrode layer is about 300nm.
d) The copper indium gallium selenide absorption layer 4 is a light absorption material of the whole solar cell device, and after reaching the layer, light is absorbed by the layer and excited in the layer to generate photo-generated electron-hole pairs. The copper indium gallium selenide material is a P-type semiconductor material, and the thickness of the copper indium gallium selenide absorption layer is generally 1.5-2.5 mu m.
e) The cadmium sulfide buffer layer 5 is used as an N-type semiconductor material and forms a PN junction with a P-type copper indium gallium selenide material, photo-generated electron-hole pairs generated by light absorbed by the copper indium gallium selenide material are separated by a built-in electric field of PN in the PN junction region, a photo-generated potential difference is formed, and the thickness of the cadmium sulfide buffer layer is 30-70nm.
f) The intrinsic zinc oxide and the aluminum-doped zinc oxide together form a window layer. The window layer provides a path for light to enter the device on the one hand, and on the other hand, exists as a front electrode of the cell device, provides a path for electron flow of the solar cell, and has a thickness of typically 800-1200nm.
g) After a load is connected between the front electrode and the back electrode, under the action of the photo-generated potential difference, a current forms a passage between the two electrodes to generate photo-generated current for supplying power to an external load.
In the conventional copper indium gallium diselenide solar cell device shown in fig. 1, the molybdenum back electrode layer 3 is designed to be a complete molybdenum metal film layer, the device can only absorb the light entering the absorption layer from the front electrode (window layer) and generate a photovoltaic effect, and the light at the back of the device can be blocked by the molybdenum back electrode layer and cannot enter the absorption layer at all, so that the photoelectric conversion efficiency is affected.
Disclosure of Invention
Based on the structure, the copper indium gallium diselenide thin film solar cell structure provided by the application fully utilizes the front light and simultaneously utilizes most of the back light to perform photoelectric conversion, so that the photoelectric conversion efficiency of the solar cell is improved.
A copper indium gallium diselenide thin film solar cell comprising: the substrate, the molybdenum back electrode layer, the copper indium gallium selenide absorption layer, the buffer layer and the window layer are sequentially arranged from bottom to top;
the molybdenum back electrode layer is positioned in the copper indium gallium selenide absorption layer, the thickness of the copper indium gallium selenide absorption layer is 2.3-3 mu m, the thickness of the molybdenum back electrode layer is 1.9-2.1 mu m, the molybdenum back electrode layer is provided with hollowed-out areas allowing light to pass through, the hollowed-out areas are regularly arranged, and the area of each hollowed-out area is 14-25 mu m 2 。
The following provides several alternatives, but not as additional limitations to the above-described overall scheme, and only further additions or preferences, each of which may be individually combined for the above-described overall scheme, or may be combined among multiple alternatives, without technical or logical contradictions.
Optionally, the molybdenum back electrode layer includes a first surface and a second surface parallel to each other, the first surface is in contact with the substrate, and the second surface is in the copper indium gallium selenide absorption layer.
Optionally, the distance between the second surface and the buffer layer is 0.4-0.7 μm.
Optionally, each hollow area is rectangular, and each hollow area is arranged in a matrix.
Optionally, the distance between the nearest edges of two adjacent hollow areas is 0.3-0.5 μm.
Optionally, a barrier layer is further disposed between the substrate and the molybdenum back electrode layer, the first surface of the molybdenum back electrode layer is in contact with the barrier layer, and the second surface is in the copper indium gallium selenide absorption layer.
Optionally, the window layer includes: an intrinsic zinc oxide window layer in contact with the buffer layer, and an aluminum-doped zinc oxide window layer in contact with the intrinsic zinc oxide window layer.
Optionally, the thickness of the barrier layer is 100-200nm.
Optionally, the thickness of the intrinsic zinc oxide window layer is 20-50nm, and the thickness of the aluminum-doped zinc oxide window layer is 800-1000nm.
The application also provides a preparation method of the copper indium gallium selenide thin-film solar cell, the molybdenum back electrode layer, the copper indium gallium selenide absorption layer, the buffer layer and the window layer are sequentially prepared on a substrate, and the preparation process of the molybdenum back electrode layer comprises the following steps:
an initial film layer is obtained by magnetron sputtering;
and etching the initial film layer by using laser to obtain the molybdenum back electrode layer.
The copper indium gallium selenide thin film solar cell provided by the application can absorb about 50% -70% of back light to generate electricity, and the photoelectric conversion efficiency is improved.
Drawings
Fig. 1 is a block diagram of a copper indium gallium diselenide thin film solar cell in the prior art;
FIG. 2 is a block diagram of a CIGS thin film solar cell according to the present application;
fig. 3 is a schematic diagram of a molybdenum back electrode layer in a copper indium gallium diselenide thin film solar cell according to the present application.
In the figure: 1. a substrate; 2. a barrier layer; 3. a molybdenum back electrode layer; 4. a copper indium gallium selenium absorption layer; 5. a buffer layer; 6. an intrinsic zinc oxide window layer; 7. an aluminum-doped zinc oxide window layer; 8. and (5) a hollowed-out area.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
For a better description and illustration of embodiments of the application, reference should be made to one or more of the accompanying drawings, but the additional details or examples used to describe the drawings should not be construed as limiting the scope of any of the inventive, presently described embodiments or preferred modes of carrying out the application.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. When an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
Referring to fig. 2 and 3, a copper indium gallium diselenide thin film solar cell includes: the substrate 1, the molybdenum back electrode layer 3, the copper indium gallium selenide absorption layer 4, the buffer layer 5 and the window layer which are sequentially arranged from bottom to top, wherein the molybdenum back electrode layer 3 is positioned in the copper indium gallium selenide absorption layer 4, the thickness d5 of the copper indium gallium selenide absorption layer 4 is 2.3-3 mu m, the thickness d3 of the molybdenum back electrode layer 3 is 1.9-2.1 mu m, the molybdenum back electrode layer 3 is provided with hollowed-out areas 8 allowing light to pass through, the hollowed-out areas 8 are a plurality of regularly arranged, and the area of each hollowed-out area 8 is 14-25 mu m 2 。
The thickness of the molybdenum back electrode layer 3 is increased more than that of a molybdenum back electrode of a conventional copper indium gallium selenide absorption layer 4, and the molybdenum back electrode layer 3 is completely embedded into the copper indium gallium selenide absorption layer 4, so that the contact area between the molybdenum back electrode layer 3 and the copper indium gallium selenide absorption layer 4 is increased on one hand, and the transmission performance of carriers is ensured; on the other hand, the migration length of the photo-generated carriers in the absorption layer is shortened, and the recombination probability of the photo-generated carriers in the absorption layer is reduced.
In the traditional copper indium gallium selenide thin film solar cell, the carrier collecting length of the molybdenum back electrode layer 3 is about 2-2.5 mu m, and in the application, the carrier collecting length of the molybdenum back electrode layer 3 is 0.5-2.1 mu m, which is more beneficial to the carrier collecting, reduces the carrier recombination possibility, improves the filling factor of the copper indium gallium selenide thin film solar cell, and further increases the photoelectric conversion efficiency of the cell.
The thicker molybdenum back electrode layer 3 is completely buried in the copper indium gallium selenide absorption layer 4, so that the path of diffuse reflection light entering the absorption layer is increased, the contact area with the copper indium gallium selenide absorption layer 4 material is ensured, and the collection performance of carriers and the conductivity of the material are ensured.
Referring to fig. 2, the hollowed-out area 8 of the molybdenum back electrode layer 3 with the hollowed-out area 8 provides a channel for diffuse reflection light on the back surface to enter the absorption layer, the area of the hollowed-out area 8 determines that the diffuse reflection light enters the absorption layer in a diffraction light mode, and the light entering the back surface is absorbed by the absorption layer and excites the photo-generated carrier pair as the light entering the front surface after entering the absorption layer, so that the overall light absorption capacity of the battery is finally improved, the short-circuit current of the battery is improved, and the final photoelectric conversion efficiency of the battery is increased.
As shown in fig. 2, the hollowed-out area 8 of the molybdenum back electrode layer 3 allows light to pass through from the back surface, and on the other hand, light loss from the front surface is caused, so that the shape, arrangement and area of the hollowed-out area 8 need to be reasonably optimized to balance advantages and disadvantages.
The molybdenum back electrode layer 3 comprises a first surface and a second surface parallel to each other, the first surface being in contact with the substrate 1, the second surface being in the copper indium gallium selenide absorbing layer 4. In one embodiment, as shown in fig. 2, a barrier layer 2 is further disposed between the substrate 1 and the molybdenum back electrode layer 3, and a first surface of the molybdenum back electrode layer 3 contacts the barrier layer 2, and a second surface is located in the copper indium gallium selenide absorption layer 4.
The distance between the second surface and the buffer layer 5 is 0.4-0.7 μm. In one embodiment, as shown in fig. 2, the distance d1 between the second surface and the buffer layer 5 is 0.5 μm.
Referring to fig. 2 and 3, each hollow area 8 is rectangular, and each hollow area 8 is arranged in a matrix.
In one embodiment, the hollow area 8 is square, and the side length d2 of the square is 0.4 μm.
The distance between the nearest edges of two adjacent hollow areas 8 is 0.3-0.5 mu m.
In one embodiment, the distance d4 between the nearest edges of two adjacent hollow areas 8 is 0.5 μm.
Referring to fig. 2, the window layer includes: an intrinsic zinc oxide window layer 6 in contact with the buffer layer 5, and an aluminum-doped zinc oxide window layer 7 in contact with the intrinsic zinc oxide window layer 6.
The thickness of the barrier layer 2 is 100-200nm. The thickness of the intrinsic zinc oxide window layer 6 is 20-50nm, and the thickness of the aluminum-doped zinc oxide window layer 7 is 800-1000nm.
The application provides a preparation method of a copper indium gallium selenide thin-film solar cell, which sequentially prepares a molybdenum back electrode layer 3, a copper indium gallium selenide absorption layer 4, a buffer layer 5 and a window layer on a substrate 1, wherein the preparation process of the molybdenum back electrode layer 3 comprises the following steps:
an initial film layer is obtained by magnetron sputtering;
and etching the initial film layer by utilizing laser to obtain the molybdenum back electrode layer 3.
The preparation method of the copper indium gallium diselenide thin film solar cell provided by the application specifically comprises the following steps:
(1) Substrate 1 cleaning (one-time cleaning): taking a glass substrate as an example, sequentially performing cleaning processes such as dust removal by a hairbrush, primary washing by deionized water, ultrasonic cleaning, secondary cleaning by deionized water, air knife drying, static electricity removal and the like on the glass substrate to obtain the glass substrate;
(2) Preparation of a barrier layer: the clean glass substrate enters a magnetron sputtering device to prepare the barrier layer 2 silicon nitride. The barrier layer 2 silicon nitride is prepared by using a high-purity silicon target reaction magnetron sputtering mode. The sputtering atmosphere is the mixed atmosphere of argon and nitrogen, the ratio of the nitrogen to the argon is about 0.8-1.0, the sputtering pressure is kept between 0.3 Pa and 0.8Pa, and the thickness of the silicon nitride film is 100-200nm.
(3) Molybdenum back electrode layer 3 preparation: the molybdenum electrode layer is prepared by adopting a magnetron sputtering mode, and the thickness of the film layer is about 1900-2100nm and is about 4-5 times of the thickness of the traditional molybdenum back electrode layer 3 during sputtering.
The molybdenum back electrode layer 3 was processed in accordance with the structure shown in fig. 3 using a laser apparatus to prepare a mesh structure shown in fig. 3. The width of the grid structure of the molybdenum electrode is about 300-500nm, the mesh size is about 4 mu m multiplied by 4 mu m, and P1 scribing is carried out while preparing the grid structure.
(4) And (3) secondary cleaning: and cleaning the substrate after laser scribing by using a cleaning machine, wherein the cleaning machine is mainly used for cleaning metal dust residues generated in the laser process.
(5) Sputtering a preformed layer of an absorber layer: and respectively sputtering a sodium-doped copper gallium layer (CuGa: na), a CuGa layer and an In metal layer on the substrate by using magnetron sputtering, wherein Cu/(in+Ga) of the film layer is approximately equal to 0.89-0.91, ga/(in+Ga) is approximately equal to 0.3, and the thickness of the whole film layer is approximately 800-1000nm.
(6) Selenizing and vulcanizing the prefabricated layer: and (3) carrying out selenizing treatment on the prefabricated layer in Se atmosphere, wherein the temperature is kept at 250-300 ℃ in the first stage, and annealing is carried out for 20-40 minutes. And in the second stage, se atmosphere in the furnace chamber is maintained, the temperature is quickly raised to 550-600 ℃, and annealing is performed for 20-40 minutes. Finally let in H 2 S gas, carrying out vulcanization treatment on the surface of the film layer at 550-600 ℃ for about 6-10 minutes, introducing argon gas to protect the film layer, and cooling. The thickness of the copper indium gallium diselenide absorbing layer 4 after the selenization and sulfidation processes is about 2.5 μm.
(7) And (3) rapidly (less than 30 minutes) carrying out chemical water area method deposition of the cadmium sulfide film on the substrate after cooling. Cadmium acetate, ammonium humate, thiourea and ammonia water with certain concentration are used to prepare a reaction solution, the cooled substrate is placed in the reaction solution, the temperature of the solution is kept at about 45-70 ℃, and the reaction time is about 7-15 minutes (different temperatures correspond to different reaction times). The thickness of the cadmium sulfide buffer layer 5 is about 30-60 nm. After the chemical reaction is finished, cleaning the surface of the film layer by using a cleaning machine, removing deposited large particles and residual chemical components, and finally drying and removing static electricity by using an air knife.
(8) Preparing an intrinsic zinc oxide layer by magnetron sputtering: the magnetron sputtering method is used for preparing the target material, the target material is undoped high-purity zinc oxide target material, the sputtering is carried out under the mixed atmosphere of argon and oxygen, the oxygen content is kept between 5 and 10 percent, and the sputtering air pressure is 0.8 to 1.5Pa. The thickness of the intrinsic zinc oxide film layer is about 20-50 nm.
(9) A mechanical needle was used for the P2 scribe process.
(10) Preparing an aluminum-doped zinc oxide layer by magnetron sputtering: the preparation method adopts a magnetron sputtering mode, and the target material is an aluminum-doped high-purity zinc oxide target material (98:2=ZnO: al 2 O 3 The sputtering is carried out under the mixed atmosphere of argon and oxygen, the oxygen content is kept between 0.2 and 0.5 percent, and the sputtering pressure is between 0.2 and 0.5Pa. The thickness of the aluminum-doped zinc oxide film layer is about 800-1000nm, the square resistance of the film layer is less than 10ohm/≡, and the average transmittance of visible light (380-780 nm) is more than 80%.
(11) A mechanical needle was used for the P3 scribe process.
(12) Testing and packaging the solar cell device.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims (6)

1. A copper indium gallium diselenide thin film solar cell comprising: the substrate, the molybdenum back electrode layer, the copper indium gallium selenide absorption layer, the buffer layer and the window layer are sequentially arranged from bottom to top and are characterized in that,
the thickness of the copper indium gallium selenide absorbing layer and the molybdenum back electrode layer is uniform and continuously distributed;
the copper indium gallium selenide absorbing layers are continuously distributed, the molybdenum back electrode layer is located in the copper indium gallium selenide absorbing layers, the molybdenum back electrode layer and the copper indium gallium selenide absorbing layers form a layer with uniform thickness, the thickness of the copper indium gallium selenide absorbing layer is 2.3-3 mu m, the thickness of the molybdenum back electrode layer is 1.9-2.1 mu m, the molybdenum back electrode layer is provided with hollowed-out areas allowing light to pass through, the hollowed-out areas are regularly distributed, and the area of each hollowed-out area is 14-25 mu m 2 The method comprises the steps of carrying out a first treatment on the surface of the The distance between the nearest edges of two adjacent hollow areas is 0.3-0.5 mu m;
the molybdenum back electrode layer comprises a first surface and a second surface which are parallel to each other, a blocking layer is further arranged between the substrate and the molybdenum back electrode layer, the first surface of the molybdenum back electrode layer is in contact with the blocking layer, the second surface is positioned in the copper indium gallium selenide absorption layer, and the distance between the second surface and the buffer layer is 0.4-0.7 mu m.
2. The copper indium gallium diselenide thin film solar cell according to claim 1, wherein each hollowed-out area is rectangular, and each hollowed-out area is arranged in a matrix.
3. The copper indium gallium diselenide thin film solar cell of claim 1, wherein the window layer comprises: an intrinsic zinc oxide window layer in contact with the buffer layer, and an aluminum-doped zinc oxide window layer in contact with the intrinsic zinc oxide window layer.
4. The copper indium gallium diselenide thin film solar cell of claim 1, wherein the thickness of the barrier layer is 100-200nm.
5. A copper indium gallium diselenide thin film solar cell according to claim 3, wherein the intrinsic zinc oxide window layer has a thickness of 20-50nm and the aluminum doped zinc oxide window layer has a thickness of 800-1000nm.
6. A method for preparing the copper indium gallium selenide thin-film solar cell according to any one of claims 1 to 5, wherein the molybdenum back electrode layer, the copper indium gallium selenide absorption layer, the buffer layer and the window layer are sequentially prepared on a substrate, and the preparation process of the molybdenum back electrode layer comprises the following steps:
an initial film layer is obtained by magnetron sputtering;
and etching the initial film layer by using laser to obtain the molybdenum back electrode layer.
CN202110098410.4A 2021-01-25 2021-01-25 Copper indium gallium selenium thin film solar cell and preparation method thereof Active CN112838134B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110098410.4A CN112838134B (en) 2021-01-25 2021-01-25 Copper indium gallium selenium thin film solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110098410.4A CN112838134B (en) 2021-01-25 2021-01-25 Copper indium gallium selenium thin film solar cell and preparation method thereof

Publications (2)

Publication Number Publication Date
CN112838134A CN112838134A (en) 2021-05-25
CN112838134B true CN112838134B (en) 2023-08-15

Family

ID=75931432

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110098410.4A Active CN112838134B (en) 2021-01-25 2021-01-25 Copper indium gallium selenium thin film solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN112838134B (en)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101379622A (en) * 2006-01-30 2009-03-04 本田技研工业株式会社 Solar cell and its manufacturing method
CN102544138A (en) * 2012-02-08 2012-07-04 南开大学 Copper indium gallium selenium thin film solar cell provided with aluminum nitride (AIN) thin film layer
JP5116869B1 (en) * 2011-09-02 2013-01-09 昭和シェル石油株式会社 Thin film solar cell and manufacturing method thereof
CN103941471A (en) * 2014-04-29 2014-07-23 京东方科技集团股份有限公司 Color film substrate, manufacturing method thereof and display device
FR3051601A1 (en) * 2016-05-20 2017-11-24 Electricite De France THIN FILM PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME
CN107919404A (en) * 2017-12-11 2018-04-17 北京四方创能光电科技有限公司 A kind of preparation method of thin-film solar cells light-transmitting component
CN207834314U (en) * 2018-06-08 2018-09-07 汉能新材料科技有限公司 Solar cell
CN109065650A (en) * 2018-09-28 2018-12-21 北京铂阳顶荣光伏科技有限公司 Light transmission film method for manufacturing solar battery and light transmission film solar battery
CN208608207U (en) * 2018-07-25 2019-03-15 汉能光伏科技有限公司 Solar power generation component and thin-film solar cells
CN110047966A (en) * 2019-04-26 2019-07-23 潮州市亿加光电科技有限公司 A kind of flexible substrates CIGS solar battery and preparation method thereof
CN111863978A (en) * 2019-04-29 2020-10-30 北京铂阳顶荣光伏科技有限公司 Solar cell and preparation method thereof

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101379622A (en) * 2006-01-30 2009-03-04 本田技研工业株式会社 Solar cell and its manufacturing method
JP5116869B1 (en) * 2011-09-02 2013-01-09 昭和シェル石油株式会社 Thin film solar cell and manufacturing method thereof
CN102544138A (en) * 2012-02-08 2012-07-04 南开大学 Copper indium gallium selenium thin film solar cell provided with aluminum nitride (AIN) thin film layer
CN103941471A (en) * 2014-04-29 2014-07-23 京东方科技集团股份有限公司 Color film substrate, manufacturing method thereof and display device
FR3051601A1 (en) * 2016-05-20 2017-11-24 Electricite De France THIN FILM PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME
CN107919404A (en) * 2017-12-11 2018-04-17 北京四方创能光电科技有限公司 A kind of preparation method of thin-film solar cells light-transmitting component
CN207834314U (en) * 2018-06-08 2018-09-07 汉能新材料科技有限公司 Solar cell
CN208608207U (en) * 2018-07-25 2019-03-15 汉能光伏科技有限公司 Solar power generation component and thin-film solar cells
CN109065650A (en) * 2018-09-28 2018-12-21 北京铂阳顶荣光伏科技有限公司 Light transmission film method for manufacturing solar battery and light transmission film solar battery
CN110047966A (en) * 2019-04-26 2019-07-23 潮州市亿加光电科技有限公司 A kind of flexible substrates CIGS solar battery and preparation method thereof
CN111863978A (en) * 2019-04-29 2020-10-30 北京铂阳顶荣光伏科技有限公司 Solar cell and preparation method thereof

Also Published As

Publication number Publication date
CN112838134A (en) 2021-05-25

Similar Documents

Publication Publication Date Title
KR20100073717A (en) Solar cell and method of fabricating the same
JP2010239139A (en) Photovoltaic device
KR102350885B1 (en) Solar cell
US20120138129A1 (en) Bifacial solar cell
KR20150031889A (en) Solar cell
KR101686663B1 (en) Thin Back Contact Solar Cells and Manufacturing Method thereof
US20130152999A1 (en) Photovoltaic component for use under concentrated solar flux
JP2006128630A (en) Photovoltaic device
KR20100098008A (en) Solar cell
CN103081123A (en) Device for generating solar power and method for manufacturing same
KR101848853B1 (en) Semi-transparent CIGS solar cells and method of manufacture the same and BIPV module comprising the same
KR101428146B1 (en) Solar cell module and method of fabricating the same
KR20120024048A (en) Solar cell and method of manufacturing the same
KR20140066963A (en) Solar cell and manufacturing method thereof
JPH09172193A (en) Thin film solar battery
CN112838134B (en) Copper indium gallium selenium thin film solar cell and preparation method thereof
KR20100090015A (en) Solar cell and method for fabricating the same
KR101863068B1 (en) Solar Cell and method of manufacturing the same
Doroody et al. Impact of back surface field (BSF) layers in cadmium telluride (CdTe) solar cells from numerical calculation
Ore et al. HIT Solar Cell With V20x Window Layer
CN102856421A (en) Novel three-junction thin-film solar cell and production method thereof
KR20210050564A (en) Absorber layer post-treatment method
CN114744063B (en) Solar cell, production method and photovoltaic module
WO2017163520A1 (en) Solar cell, solar cell module, and method for manufacturing solar cell
CN219019437U (en) Perovskite-cadmium telluride/selenium-doped cadmium telluride laminated solar cell

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant