CN112837848A

CN112837848A - Nano-silver conductive film, preparation method thereof and electronic device

Info

Publication number: CN112837848A
Application number: CN201911159821.9A
Authority: CN
Inventors: 高菁; 孟锴
Original assignee: Nanchang OFilm Display Technology Co Ltd
Current assignee: Nanchang OFilm Display Technology Co Ltd
Priority date: 2019-11-22
Filing date: 2019-11-22
Publication date: 2021-05-25

Abstract

The application discloses a nano-silver conductive film and a preparation method thereof. The preparation method of the nano-silver conductive film comprises the following steps: forming a conductive layer on a substrate through a first material; wherein the first material comprises a photosensitive material; etching the conductive layer by using an etching solution to form a conductive pattern layer; and irradiating the conductive pattern layer by using first ultraviolet light to make the photosensitive material alkaline. The preparation method of the nano-silver conductive film can prevent the etching solution remained in the nano-silver conductive film from continuously corroding the nano-silver conductive film, so that the reliability of preparing the nano-silver conductive film is improved. The application also provides an electronic device comprising the nano silver conductive film.

Description

Nano-silver conductive film, preparation method thereof and electronic device

Technical Field

The present disclosure relates to the field of conductive film technology, and more particularly, to a nano-silver conductive film, a method for manufacturing the same, and an electronic device using the same.

Background

The etching method is a method for selectively corroding or stripping the surface of the substrate or the surface covering film according to the mask pattern or design requirements. Etching methods are widely used in the semiconductor field, for example: display field, integrated circuit field. The etching method can be divided into dry etching and wet etching. Among them, wet etching is widely used for etching of metal thin films and oxide thin films. Wet etching is a technique of immersing an etching object in an etching solution to perform etching.

However, the wet etching has a risk of incomplete cleaning of the etching solution, so that a part of the etching solution remains in the etching object, and the remaining etching solution can continuously and slowly corrode the etching object, thereby burying hidden troubles for subsequent finished conductive films and electronic devices and influencing the reliability of the conductive films and the electronic devices.

Disclosure of Invention

The application provides a preparation method of a nano-silver conductive film. The preparation method of the nano-silver conductive film can prevent the etching solution remained in the nano-silver conductive film from continuously corroding the nano-silver conductive film, so that the reliability of the nano-silver conductive film is improved. The application also provides a nano-silver conductive film prepared by the preparation method.

In a first aspect, the present application provides a method for preparing a nano silver conductive film. The preparation method of the nano-silver conductive film comprises the following steps:

forming a conductive layer on a substrate through a first material; wherein the first material comprises a photosensitive material;

etching the conductive layer by using an acidic etching solution to form a conductive pattern layer;

and irradiating the conductive pattern layer by adopting first ultraviolet light so as to make the photosensitive material be alkaline.

The method of adding the photosensitive layer into the conductive pattern layer or covering the photosensitive layer on the conductive pattern layer is adopted, so that the alkalinity of the photosensitive material in the photosensitive layer after illumination is opposite to the acidity of the residual etching solution, the etching solution remained in the conductive pattern layer is neutralized, the conductive pattern layer is prevented from being slowly corroded by the residual etching solution, and the reliability of the nano silver conductive film is greatly improved.

In one embodiment, before the etching the conductive layer with the acidic etching solution to form the conductive pattern layer and after the forming the conductive layer on the substrate with the first material, the preparation method further includes:

and forming a protective layer on the conductive layer, wherein the protective layer is formed by coating a material with fluidity and then curing. The protective layer can prevent the conductive layer from being oxidized.

In one embodiment, the step of forming a protective layer on the conductive layer comprises:

coating a flowable material to cover the conductive layer;

curing the flowable material by irradiation of a second ultraviolet light to form the protective layer;

wherein a wavelength band of the second ultraviolet light is different from a wavelength band of the first ultraviolet light. The ultraviolet light with different wave bands is adopted, so that the substances in the conductive layer are not influenced when the protective layer is cured.

In one embodiment, the first ultraviolet light has a wavelength band in the range of 320nm to 380nm and the second ultraviolet light has a wavelength band in the range of 200nm to 320 nm;

alternatively, the first ultraviolet light has a wavelength band in the range of 200nm to 320nm, and the second ultraviolet light has a wavelength band in the range of 320nm to 380 nm. These two bands of ultraviolet light are most favorable for curing of the material and avoid interaction.

In one embodiment, the conductive pattern layer is a nano silver wire conductive film, the etching solution is acidic, and the photosensitive material is a photobase generator. The photobase generator can neutralize the residual acid etching solution.

In one embodiment, the photosensitive material contains a compound having a nitrogen atom and a conjugated multiple bond, and the conjugated multiple bond shortens or disappears under irradiation of the first ultraviolet light.

In one embodiment, the first ultraviolet light is formed by irradiation using one or more of a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a xenon lamp, or a metal halide lamp.

In a second aspect, the application also provides a preparation method of the nano silver conductive film. The preparation of the nano-silver conductive film comprises the following steps:

forming a conductive layer on the substrate through a second material; wherein the second material comprises a conductive material;

forming a photosensitive layer on the conductive layer by a photosensitive material;

and irradiating the photosensitive layer by using first ultraviolet light to make the photosensitive material alkaline.

In one embodiment, before the etching the conductive layer with the acidic etching solution to form the conductive pattern layer and after forming the photosensitive layer on the conductive layer by the photosensitive material, the preparation method further includes:

and forming a protective layer on the photosensitive layer, wherein the protective layer is formed by coating a material with fluidity and then curing.

In one embodiment, the step of forming a photosensitive layer on the conductive layer by a photosensitive material includes:

coating the photosensitive material on the conductive layer;

curing the photosensitive material at a preset temperature to form the photosensitive layer.

In one embodiment, the conductive pattern layer is a nano silver wire conductive film, and the etching solution is acidic.

In a third aspect, the application also provides a preparation method of the nano silver conductive film. The preparation method of the nano-silver conductive film comprises the following steps:

forming a protective layer on the conductive layer by a third material; wherein the third material comprises a photosensitive material;

and irradiating the protective layer by adopting first ultraviolet light to make the photosensitive material alkaline.

In a fourth aspect, the present application also provides a nano silver conductive film. The nano silver conductive film is prepared according to the preparation method.

In one embodiment, the nano silver conductive film is applied to a touch screen, and the nano silver conductive film is a touch component.

In a fifth aspect, the present application further provides an electronic device. The electronic device comprises the nano silver conductive film.

In the embodiment of the application, in the preparation process of the nano-silver conductive film, the method of adding the photosensitive material into the conductive pattern layer or covering the photosensitive layer on the conductive pattern layer is adopted, so that the photosensitive material in the photosensitive layer shows alkalinity after illumination, and the alkalinity is opposite to the acidity of the residual etching solution so as to neutralize the etching solution remained in the conductive pattern layer, thereby avoiding the slow corrosion of the conductive pattern layer by the residual etching solution and greatly improving the reliability of the nano-silver conductive film.

Drawings

In order to more clearly illustrate the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

FIG. 1 is a schematic structural diagram of an electronic device provided herein;

fig. 2 is a schematic step diagram of a method for preparing a nano silver conductive film according to a first embodiment;

fig. 3 is a schematic process flow diagram of a process for preparing a nano silver conductive film by using the preparation method of the first embodiment;

fig. 4 is a schematic step diagram of a method for preparing a nano silver conductive film according to a second embodiment;

FIG. 5 is a schematic process flow diagram of a process for preparing a nano-silver conductive film by using the preparation method of the second embodiment;

FIG. 6 is a flowchart illustrating the step S220 shown in FIG. 4;

fig. 7 is a schematic step diagram of a third embodiment of a method for preparing a nano-silver conductive film provided by the present application;

fig. 8 is a schematic process flow diagram of a process for preparing a nano silver conductive film by using the preparation method of the third embodiment;

FIG. 9 is a flowchart illustrating the step S320 shown in FIG. 4;

fig. 10 is a schematic view of the steps of a method for preparing a nano silver conductive film according to a fourth embodiment;

fig. 11 is a schematic process flow diagram of a process for preparing a nano silver conductive film by using the preparation method of the fourth embodiment.

Detailed Description

Technical solutions in embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, and not all embodiments. In the present invention, the embodiments and features of the embodiments may be combined with each other without conflict. All other embodiments obtained by a person of ordinary skill in the art without any inventive work based on the embodiments in the present application are within the scope of protection of the present application.

The embodiment of the application provides an electronic device. The electronic device comprises a nano silver conductive film. The electronic device can be a mobile phone, a large-size display, a tablet computer, an electronic reader, a notebook computer, a vehicle-mounted device or a wearable device and the like. The nano silver conductive film is applied to a touch screen, a display screen or a touch component in the touch screen. In the embodiment of the present application, the description is given by taking the application of the nano-silver conductive film to the touch component of the touch screen as an example.

Referring to fig. 1, fig. 1 is a schematic structural view of a nano silver conductive film applied to a touch screen. The touch screen 100 includes a cover plate 10, a nano-silver conductive film 20, and a display module 30, which are sequentially stacked. The cover plate 10 and the nano silver conductive film 20 are both located on the light emitting side of the display module 30. The display component 30 is used for displaying pictures. When the user uses the touch screen 100, the cover 10 faces the user. The cover plate 10 plays a role in protecting the nano silver conductive film 20 and the display module 30, and can print different colors, patterns and signs to play a role in decorating and beautifying the touch screen.

It can be understood that, when the nano silver conductive film 20 is a touch screen, the nano silver conductive film 20 can be a touch sensing element for sensing the touch operation of the contact. The contacts may be user fingers, touch pens, etc.

As shown in fig. 1, in the embodiment of the present application, the nano silver conductive film 20 is located between the display assembly 30 and the cover plate 10, so that the distance between the nano silver conductive film 20 and the contact can be reduced, thereby improving the touch sensing performance. In other embodiments, the nanosilver conductive film 20 can also be integrated into the display element 30, for example, the display element 30 can be an in-cell (in-cell) touch display screen, so that the touch screen is thinner and lighter. The embodiment of the present application does not limit the specific position of the display module 30 relative to the nano-silver conductive film 20.

With reference to fig. 2 and fig. 3, fig. 2 is a schematic view illustrating a first embodiment of a method for manufacturing a nano-silver conductive film according to the present application; fig. 3 is a schematic process flow diagram of the preparation method of the first embodiment for preparing the nano silver conductive film. The nano silver conductive film 20 includes a substrate 21.

The preparation method of the nano-silver conductive film comprises the following steps:

s110: forming a conductive layer 220 by a first material on the substrate 21; wherein the first material comprises a photosensitive material.

The substrate 21 may be a rigid material (e.g., a glass substrate) or a flexible material (e.g., a polymer). In the present embodiment, the substrate 21 is described by taking a flexible material as an example. For example, the substrate 21 may be made of a flexible material such as Cyclic Olefin Polymer (COP), polyethylene terephthalate (PET), Polycarbonate (PC), or polymethyl methacrylate (PMMA).

In the embodiment, the substrate 21 is made of a flexible material, so that the flexibility of the nano silver conductive film 20 is improved, and the nano silver conductive film is favorably applied to products such as flexible display screens and large-size touch screens.

It is understood that in the first embodiment of the present application, the first material includes not only the conductive material, but also the photosensitive material, such as photobase generator, which is a novel photoinitiator that can generate both free radicals to initiate radical polymerization and basic substances such as tertiary amines after photolysis. The photosensitive material forms a photosensitive layer 230. As shown in fig. 3, the photosensitive layer 230 is located in the conductive layer 220.

The conductive layer 220 is formed on the substrate 21, and a photosensitive material and a conductive material can be coated on the substrate 21 and mixed to form a composite layer of the conductive layer 220 and the sensing layer 230.

It is understood that a photosensitive material is added as an additive to the conductive material so that the photosensitive layer 230 is provided in the conductive layer 220. The photosensitive material can be cured under irradiation of light of a certain wavelength band (for example, ultraviolet light), and the photosensitive material can also be thermally cured.

S120: the conductive layer 220 is etched using an acidic etchant to form the conductive pattern layer 22.

It is understood that the conductive pattern layer 22 is the final form of the conductive layer 220 after being patterned by the etching process. The photosensitive material can also be etched by the etching liquid. As shown in fig. 3, the conductive pattern layer 22 includes a conductive layer 220 and a photosensitive layer 230, which are patterned by an etching process to form the conductive pattern layer 22 and the patterned photosensitive layer 23.

Before the etching of the conductive layer 220 with the etching solution, the method for preparing the nano-silver conductive film further includes: and forming an etching liquid resistant protective layer, and curing the etching liquid resistant protective layer by heating.

The projection of the etching-resistant liquid protective layer on the substrate 21 is the projection of the etched conductive pattern layer 22 on the substrate 21. The purpose of development is achieved in this step.

When the conductive layer 220 is etched by using the etching solution, the conductive layer 220 not protected by the etching solution resistant protective layer is etched and taken out, and finally the patterned conductive pattern layer 22 is obtained.

It will be appreciated that the conductive layer 220 is patterned by a development and etching process to form the conductive pattern layer 22.

S130: the conductive pattern layer 22 is irradiated with the first ultraviolet light to make the photosensitive material alkaline.

It can be understood that the photosensitive material after being irradiated by the first ultraviolet light exhibits an alkalinity opposite to an acidity exhibited by the etching solution.

In the embodiment of the present application, the photosensitive layer 230 including a photosensitive material is added to the conductive layer 220, so that the alkalinity of the conductive pattern layer 22 appearing under the irradiation of the first ultraviolet light is opposite to the acidity of the etching solution, thereby neutralizing the etching solution remaining in the conductive pattern layer 22, avoiding the remaining etching solution from continuously corroding the conductive pattern layer 22, and improving the reliability of the nano-silver conductive film.

And, the photosensitive material is directly located in the conductive pattern layer 22, and under the irradiation of the first ultraviolet light, the residual etching liquid in the conductive pattern layer 22 can be neutralized quickly and effectively, so that the reliability of the nano silver conductive film is improved.

It can be understood that, in the embodiment of the present application, since the nano silver conductive film can be etched by the acidic etching solution, the acidic etching solution is used to etch the nano silver conductive film, and the photosensitive material which is alkaline under illumination is used to neutralize the acidic etching solution remained in the conductive pattern layer, so that the reliability of the nano silver conductive film is improved. In other embodiments, when the semiconductor component is etched by using alkaline etching liquid, the photosensitive material can use an acidic photoacid generator under illumination, so as to neutralize the alkaline etching liquid remained in the conductive pattern layer, thereby improving the reliability of the semiconductor component. That is, the photosensitive material exhibits an acidity-basicity opposite to that of the etching liquid under light irradiation, and the etching liquid remaining in the conductive pattern layer can be solved.

As shown in fig. 3, after the first ultraviolet light irradiation, the method for preparing a nano silver conductive film further includes:

forming an insulating layer 24 on the conductive pattern layer 22;

forming a wiring layer 25 on the insulating layer 24;

a dielectric layer 26 is imaged on the routing layer 25.

It is understood that the method for preparing the nano-silver conductive film further includes sequentially forming an insulating layer 24, a routing layer 25 and a dielectric layer 26 on the conductive pattern layer 22.

The insulating layer 24 is located between the conductive pattern layer 22 and the routing layer 25. Dielectric layer 26 is located on a side of routing layer 25 away from substrate 21. The dielectric layer 26 is made of an insulating material. The dielectric layer 26 can protect the wiring layer 25 and prevent the exposed wiring layer 25 from affecting the performance of the nano-silver conductive film 20, thereby improving the performance of the nano-silver conductive film 20.

The wiring layer 25 is correspondingly connected with each pattern in the conductive pattern layer 22, so that the signal of the conductive pattern layer 22 is transmitted to the circuit board, and the touch operation of the nano-silver conductive film 20 is realized. The insulating layer 24 is located between the conductive pattern layer 22 and the routing layer 25, so as to prevent each of the traces in the routing layer 25 from being electrically connected to the conductive pattern layer 22, which may cause short circuit of the conductive pattern layer 22.

In one embodiment, the nano-silver conductive film 20 is a touch device. The conductive material used for the conductive pattern layer 22 is a nano silver wire (AgNW). That is, the conductive pattern layer 22 is a nano silver wire conductive film. The preparation process of the nano-silver conductive film comprises the steps of coating a whole layer of nano-silver conductive layer 220 on a transparent substrate, and patterning the nano-silver conductive layer 220 to form the transparent conductive film with the nano-grade silver wire conductive network pattern. In other embodiments, other conductive materials can be used for the conductive pattern layer 22, such as: copper nanowires, or other etchable conductive materials.

The nano silver wire has excellent conductivity of silver, nano size effect, excellent light transmittance and bending resistance, and is widely applied to products such as large-size touch screens, flexible display screens, touch screens and the like.

In the embodiment of the present application, the nano silver conductive film 20 uses a nano silver wire instead of using an ITO (indium tin oxide) transparent conductive material in the conventional technology, which not only reduces the cost of raw materials of the nano silver conductive film 20, simplifies the preparation process, but also increases the light transmittance of the nano silver conductive film 20.

The diameter of the nano silver wire is too thick, the haze of the conductive film of the nano silver wire is increased, and the diameter of the nano silver wire is too thin, so that the phenomenon of 'open circuit' of the nano silver wire is easily caused. Optionally, the length of the silver nanowires is 20 μm to 150 μm, and the diameter is in the range of 10nm to 60 nm. The thickness of the substrate 21 is too thick to be beneficial for practical production, and too thin can not play a bearing role, so that the conductive film of the nano silver wire is curled. Optionally, the thickness of the substrate 21 is in the range of 10um to 300 um.

In one embodiment, the substrate 21 includes one or more materials of a resin, a dispersant, a thickener, or a surfactant. Wherein one or more of the resin, the dispersant, the thickener or the surfactant is a substance left after the nano silver wire coating liquid is coated on the substrate 21 and dried.

Wherein the resin acts as an adhesive to the substrate 21 to reduce migration of the silver nanowires. The dispersing agent can uniformly disperse the nano silver wires to avoid the aggregation of the nano silver wires. The thickening agent adjusts the viscosity of the nano silver wire ink, and is convenient for coating. The surfactant increases the wettability of the surface of the nano silver wire and adjusts the surface tension of the nano silver wire to facilitate coatability.

In the embodiment of the present application, the substrate 21 includes one or more materials of a resin, a dispersant, a thickener, or a surfactant, which can improve the reliability of the conductive pattern layer 22.

Accordingly, the etching solution is acidic. For example: the mixed solution of hydrochloric acid and nitric acid is used to pattern the nano silver conductive layer 220, resulting in the conductive pattern layer 22. In the embodiment of the present application, the specific type of the acidic etching solution is not limited.

Further, the photosensitive material is a photobase generator. The photosensitive material contains a compound having a nitrogen atom and a conjugated multiple bond. The conjugated multiple bonds are shortened or disappeared under the irradiation of the first ultraviolet light.

It is understood that when the conjugated multiple bonds in the photosensitive material are shortened or disappeared by the irradiation of the first ultraviolet light, the photosensitive material is basic. For example: methylaminoisopropyltropone, 2-isopropylaminotropolone, and the like. In the embodiment of the present application, the number of nitrogen-containing atoms in the photosensitive material is not limited, and the specific type of the conjugated multiple bond in the photosensitive material is not limited.

Here, the photosensitive material refers to a compound which exhibits basicity or increases basicity by irradiation of first ultraviolet light. In addition, the alkali refers to a property of curing a resin cured by the action of alkali. Alkaline indicates that the pH of the material is greater than 7.0.

In the embodiment of the application, the photosensitive material contains the compound with the nitrogen atom and the conjugated multiple bond, so that the alkaline developing efficiency of the photosensitive material under the irradiation of the first ultraviolet light can be effectively improved, the acidic etching solution can be quickly and effectively neutralized, the silver nanowire is prevented from being slowly corroded, and the reliability of the silver nanowire transparent conductive film is further improved.

The photosensitive material is alkaline under the irradiation of the first ultraviolet light, and can inhibit the generation of unnecessary byproducts such as gas and water, so that the reliability of the transparent conductive film of the nano silver wire is further improved.

In one embodiment, the first ultraviolet light has a wavelength band in the range of 320nm to 380 nm. For example, the first ultraviolet light is formed by irradiation using one or more of a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a xenon lamp, or a metal halide lamp.

In the embodiment of the present application, ultraviolet light invisible to the naked eye is adopted as the first ultraviolet light waveband, so that light pollution caused when the first ultraviolet light irradiates the nano silver conductive film 20 is avoided.

With continuing reference to fig. 4 and 5, fig. 4 is a schematic diagram illustrating a second embodiment of a method for fabricating a nano-silver conductive film according to the present application; fig. 5 is a schematic process flow diagram of a process for preparing a nano silver conductive film by using the preparation method of the second embodiment. Differences between the present embodiment and the first embodiment will be mainly described below, and most technical contents of the present embodiment that are the same as those of the foregoing embodiment will not be described below.

s210: forming a conductive layer 220 by a first material on the substrate 21; wherein the first material comprises a photosensitive material.

The specific steps included in S210 refer to S110.

S220: forming a protective layer 27 on the conductive layer 220; the protective layer 27 is formed by applying a material having fluidity and then curing the material.

The material having fluidity is a resin that can be cured by irradiation with light. The resin may be used by containing one or more of a thermoplastic resin, a thermosetting resin, and a second ultraviolet-curable resin. In the embodiments of the present application, the kind of the material having the fluidity is not particularly limited.

For example, the thermoplastic resin may be: polyethylene, polypropylene, polyvinyl chloride, polystyrene, polymethyl methacrylate, polyester, polyoxymethylene, polyamide, polyphenylene oxide, and the like. The thermosetting resin may be unsaturated polyester, amino resin, and silicone ether resin, such as melamine formaldehyde resin, furan resin, polybutadiene resin, or silicone resin, in addition to the phenol resin and epoxy resin that are generally used. The second uv curable resin may be epoxy acrylic resin, urethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin, vinyl resin, and the like.

S230: the conductive layer 220 is etched using an acidic etchant to form the conductive pattern layer 22.

The specific steps included in S230 are referred to as S120.

S240: the conductive pattern layer 22 is irradiated with the first ultraviolet light to make the photosensitive material alkaline.

The specific steps included in S240 are referred to as S130. It will be appreciated that the curing band of the protective layer 27 is different from the curing band of the photosensitive layer.

In the embodiment of the present application, when the conductive layer 220 is a conductive film of a nano silver wire, the nano silver wire is formed by coating with an aqueous coating solution, so that the nano silver wire is not firmly attached to the substrate 21 when coated on the substrate 21, and the nano silver wire is not flat after being cured, and therefore, after the nano silver wire is coated on the substrate 21, the protective layer 27 is further coated, which not only can increase the adhesion of the conductive layer 220 on the substrate 21 and avoid the migration of the nano silver wire, but also can avoid the defect of an upper layer material caused by the protrusion of the conductive layer 220, thereby improving the reliability of the conductive film 20 of the nano silver.

Moreover, after the protective layer 27 is formed, the conductive layer 220 is etched by using the etching solution, and after the conductive layer 220 is etched by using the etching solution, the photosensitive layer 230 is irradiated by using the first ultraviolet light, so that the photosensitive layer 230 is prevented from being alkaline too early, and the photosensitive layer 230 is alkaline after the conductive pattern layer 22 is etched by using the etching solution, so that the etching solution remained in the conductive pattern layer 22 is effectively neutralized.

Referring to fig. 6, fig. 6 is a schematic flowchart of step S220 shown in fig. 4. The step of forming the protective layer 27 on the conductive layer 220 includes:

s221: a flowable material is coated to cover the conductive layer 220.

S222: curing the flowable material using a second ultraviolet light irradiation to form a protective layer 27; wherein the second ultraviolet light has a wavelength band different from that of the first ultraviolet light.

It will be appreciated that the protective layer 27 is cured at different times than the photosensitive layer. The range of the wave band of the second ultraviolet light is staggered with the range of the wave band of the first ultraviolet light.

Since the etching of the conductive pattern layer 22 by the etching solution is performed after the protective layer 27 is cured by the second uv light, the photosensitive layer needs to be alkaline after the conductive pattern layer 22 is etched, so that the subsequent photosensitive layer is alkaline under the irradiation of the first uv light to neutralize the etching solution remaining in the conductive pattern layer 22. Since the photosensitive layer needs to be alkaline under the irradiation of the first ultraviolet light after the conductive pattern layer 22 is etched, the photosensitive material in the photosensitive layer does not change and is alkaline when the second ultraviolet light irradiates the protective layer 27.

In one embodiment, the first ultraviolet light has a wavelength band in the range of 320nm to 380nm, and the second ultraviolet light has a wavelength band in the range of 200nm to 320 nm. For example, the curing wavelength of the photosensitive layer 23 is 340nm, and the curing wavelength of the protective layer 27 is 254 nm. In this case, the protective layer 27 may be a mixture of an epoxy resin, pentaerythritol tetrakis (thioglycolate), and N-methyl-2-cyanopyrrole.

In another embodiment, the second ultraviolet light has a wavelength band in the range of 320nm to 380nm and the first ultraviolet light has a wavelength band in the range of 200nm to 320 nm. For example, the curing wavelength of the protective layer 27 is 365nm, and the curing wavelength of the photosensitive layer 23 is 250 nm.

In the embodiment of the present application, ultraviolet light invisible to naked eyes is adopted in both the first ultraviolet light waveband and the second ultraviolet light waveband, so that light pollution caused by the first ultraviolet light and the second ultraviolet light when the nano silver conductive film 20 is irradiated by the light is avoided.

With continuing reference to fig. 7 and 8, fig. 7 is a schematic view illustrating a third embodiment of a method for fabricating a nano-silver conductive film according to the present application; fig. 8 is a schematic process flow diagram of a process for preparing a nano silver conductive film by using the preparation method of the third embodiment. Differences between the present embodiment and the first embodiment will be mainly described below, and most technical contents of the present embodiment that are the same as those of the foregoing embodiment will not be described below.

s310: forming a conductive layer 220 by a second material on the substrate 21; wherein the second material comprises a conductive material.

It is understood that, in the present embodiment, the conductive layer 220 includes a conductive material and does not include a photosensitive material. The conductive material used for the conductive pattern layer 22 is a nano silver wire (AgNW). That is, the conductive pattern layer 22 is a nano silver wire conductive film.

S320: a photosensitive layer is formed on the conductive layer 220 by a photosensitive material.

It is understood that, in the present embodiment, the photosensitive layer is located in a different layer structure from the conductive pattern layer 22, and the photosensitive layer is located on the conductive pattern layer 22. As shown in fig. 8, the photosensitive layer is located on the upper layer of the conductive layer 220.

S330: a protective layer 27 is formed on the photosensitive layer, and the protective layer 27 is formed by applying a material having fluidity and then curing.

The specific steps included in S330 are referred to as S220.

S340: the conductive layer 220 is etched using an acidic etchant to form the conductive pattern layer 22.

The specific steps included in S340 are referred to as S120.

S350: the conductive pattern layer 22 is irradiated with the first ultraviolet light to make the photosensitive material alkaline.

The specific steps included in S350 are referred to as S130. It will be appreciated that the curing band of the protective layer 27 is different from the curing band of the photosensitive layer.

In the embodiment of the present application, after the conductive layer 220 is formed by coating the conductive material on the substrate 21, the photosensitive material is coated on the conductive layer 220 to form a photosensitive layer, so that the photosensitive layer is located between the conductive pattern layer 22 and the protection layer 27, and the photosensitive material in the photosensitive layer can be prevented from affecting the performance of the conductive material in the conductive pattern layer 22, thereby improving the conductivity of the conductive pattern layer 22.

Referring to fig. 9, fig. 9 is a schematic flowchart of step S320 shown in fig. 4.

The step of forming a photosensitive layer on the conductive layer 220 by a photosensitive material includes:

s321: coating a photosensitive material on the conductive layer 220;

s322: the photosensitive material is cured at a predetermined temperature to form the photosensitive layer 230.

It can be understood that, in the embodiment of the present application, before the conductive layer 220 is etched by using the etching solution, the photosensitive material is already cured, so that the photosensitive material is prevented from being lost by the etching solution during the etching process, and the alkaline property of the photosensitive material after etching under the irradiation of the first ultraviolet light can effectively neutralize the residual etching solution, thereby improving the reliability of the nano-silver conductive film 20.

With reference to fig. 10 and 11, fig. 10 is a schematic view illustrating a fourth embodiment of a method for manufacturing a nano-silver conductive film according to the present application; fig. 11 is a schematic process flow diagram of a process for preparing a nano silver conductive film by using the preparation method of the fourth embodiment. Differences between the present embodiment and the first embodiment will be mainly described below, and most technical contents of the present embodiment that are the same as those of the foregoing embodiment will not be described below.

s410: forming a conductive layer 220 by a second material on the substrate 21; wherein the second material comprises a conductive material.

The specific steps included in S410 are referred to as S310.

S420: forming a protective layer 27 on the conductive layer 220 by a third material; wherein the third material comprises a photosensitive material.

The photosensitive material used for the photosensitive layer and the fluid material used for the protective layer 27 are mixed and then coated on the conductive pattern layer 22, so that the photosensitive layer is embedded in the protective layer 27. It is understood that the third material includes not only a flowable material but also a photosensitive material.

It will be appreciated that the photosensitive material is added as an additive to the flowable material so that the photosensitive layer is located in the protective layer 27. Wherein, the photosensitive material and the material with fluidity can be etched by the etching liquid.

S430: the conductive layer 220 is etched using an acidic etchant to form the conductive pattern layer 22.

The specific steps included in S430 are as described in S120.

S440: the protective layer 27 is irradiated with a first ultraviolet ray to make the photosensitive material alkaline.

The specific steps included in S440 are referred to as S130. It will be appreciated that the curing band of the protective layer 27 is different from the curing band of the photosensitive layer.

In the embodiment of the present application, after the conductive layer 220 is formed by coating the conductive material on the substrate 21, the photosensitive material and the flowable material are mixed and coated on the conductive layer 220, so that the photosensitive layer is located in the protective layer 27, the photosensitive material in the photosensitive layer can be prevented from affecting the performance of the conductive material in the conductive pattern layer 22, and the conductive performance of the conductive pattern layer 22 can be improved.

Wherein, the protective layer 27 is interlaced with the curing wave band range of the photosensitive layer 23. That is, the protective layer 27 and the photosensitive layer 23 are cured by irradiation with light of different wavelength bands. It will be appreciated that the protective layer 27 and the photosensitive layer 23 cure at different times.

In the embodiment of the present application, the wavelength range of the curing of the protective layer 27 is staggered with the wavelength range of the curing of the photosensitive layer 23, so that the photosensitive material in the photosensitive layer 23 is prevented from becoming alkaline too early when the protective layer 27 is cured under light irradiation, and the photosensitive layer 23 becomes alkaline after the conductive pattern layer 22 is etched by the etching solution, thereby effectively neutralizing the etching solution remained in the conductive pattern layer 22.

The foregoing detailed description of the embodiments of the present application has been presented to illustrate the principles and implementations of the present application, and the above description of the embodiments is only provided to help understand the methods and their core ideas of the present application; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims

1. A preparation method of a nano-silver conductive film is characterized by comprising the following steps:

2. The method according to claim 1, wherein before the etching the conductive layer with the acidic etching liquid to form the conductive pattern layer and after the forming the conductive layer on the substrate with the first material, the method further comprises:

and forming a protective layer on the conductive layer, wherein the protective layer is formed by coating a material with fluidity and then curing.

3. The method of manufacturing according to claim 2, wherein the step of forming a protective layer on the conductive layer includes:

coating a flowable material to cover the conductive layer;

wherein a wavelength band of the second ultraviolet light is different from a wavelength band of the first ultraviolet light.

4. The method of claim 3, wherein the first ultraviolet light has a wavelength in a range of 320nm to 380nm, and the second ultraviolet light has a wavelength in a range of 200nm to 320 nm;

alternatively, the first ultraviolet light has a wavelength band in the range of 200nm to 320nm, and the second ultraviolet light has a wavelength band in the range of 320nm to 380 nm.

5. The production method according to any one of claims 1 to 4, wherein the conductive pattern layer is a silver nanowire conductive layer, and the photosensitive material is a photobase generator.

6. The production method according to any one of claims 1 to 4, wherein the photosensitive material contains a compound having a nitrogen atom and a conjugated multiple bond, and the conjugated multiple bond shortens or disappears under irradiation of the first ultraviolet light.

7. The production method according to claim 5, wherein the first ultraviolet light is formed by irradiation using one or more of a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a xenon lamp, or a metal halide lamp.

8. A preparation method of a nano-silver conductive film is characterized by comprising the following steps:

9. The production method according to claim 8, wherein before the etching of the conductive layer with the acidic etching liquid to form a conductive pattern layer and after forming a photosensitive layer on the conductive layer by a photosensitive material, the production method further comprises:

10. The production method according to claim 8, wherein the step of forming a photosensitive layer on the conductive layer by a photosensitive material comprises:

coating the photosensitive material on the conductive layer;

11. The production method according to any one of claims 8 to 10, wherein the conductive pattern layer is a silver nanowire conductive layer, and the photosensitive material is a photobase generator.

12. A preparation method of a nano-silver conductive film is characterized by comprising the following steps:

13. The method according to claim 12, wherein the conductive pattern layer is a silver nanowire conductive layer, and the photosensitive material is a photobase generator.

14. A nano silver conductive film, characterized in that it is prepared according to the preparation method of any one of claims 1 to 13.

15. An electronic device comprising the nano-silver conductive film according to claim 14.