CN112835271B - Exposure method for lithographic apparatus with rotary exchange double workpiece stage - Google Patents
Exposure method for lithographic apparatus with rotary exchange double workpiece stage Download PDFInfo
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- CN112835271B CN112835271B CN202110067156.1A CN202110067156A CN112835271B CN 112835271 B CN112835271 B CN 112835271B CN 202110067156 A CN202110067156 A CN 202110067156A CN 112835271 B CN112835271 B CN 112835271B
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000008569 process Effects 0.000 claims abstract description 18
- 238000001459 lithography Methods 0.000 claims abstract description 6
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 238000005259 measurement Methods 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000012546 transfer Methods 0.000 claims description 15
- 230000009977 dual effect Effects 0.000 claims description 13
- 230000004075 alteration Effects 0.000 claims description 11
- 230000010363 phase shift Effects 0.000 claims description 8
- 238000006073 displacement reaction Methods 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 84
- 210000000887 face Anatomy 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides an exposure method of a lithography device with a rotary exchange double workpiece table, wherein the lithography device comprises an exposure unit, the exposure unit comprises a measuring station and an exposure station, and the measuring station executing step comprises a first measuring step and a second measuring step; the exposure station executing step comprises a first exposure step and a second exposure step; wherein the first exposure step includes pre-exposure preparation, alignment of the first or second workpiece stage; the second exposure step comprises the step of executing an exposure process on the wafer to be processed; the first and second workpiece tables operate in parallel, and the first measuring step and the first exposing step are synchronously executed; or, the second measuring step and the second exposing step are synchronously executed, so that the exposure precision is improved and the productivity bottleneck is optimized.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing lithography equipment, in particular to an exposure method of a lithography device with a rotary exchange double workpiece table.
Background
In order to improve productivity, the conventional photolithography machine generally adopts a double stage technique like ASML corporation in netherlands or adopts a tandem stage technique of Nikon corporation in japan.
The double-workpiece-table photoetching machine of the Dutch ASML company is provided with a workpiece table on a measuring station and an exposing station respectively, each workpiece table is respectively provided with a silicon wafer, and the silicon wafers on the measuring station are aligned and leveled in coordinates while the silicon wafers on the exposing station are aligned and exposed in a mask; and exchanging the stations through a horizontal movement mode, then exchanging the exposed silicon wafers on the measuring station for coordinate alignment and leveling, and simultaneously, exchanging the exposed silicon wafers on the exposing station for mask alignment and exposure. The horizontal movement mode enables the exposed silicon wafer to undergo coordinate alignment and leveling twice, and the beat is slower.
A tandem stage lithographic apparatus of Nikon corporation is provided with a stage and a measuring stage. Wherein, carrying out wafer loading and unloading and pre-alignment of the silicon wafer on the workpiece table; and the measuring table is sequentially moved to an exposure station and an alignment station to finish mask alignment. Then, the silicon wafer on the workpiece table is aligned and leveled, and then the silicon wafer is exposed, wherein the exposure station and the alignment station of the serial workpiece table are operated independently, and the beat is slower.
Therefore, improving the operation efficiency of the dual stage is one of the targets of the current development of the photolithography machine, and the efficiency of changing the stage directly affects the operation efficiency of the dual stage and the yield of the photolithography machine, so that it is necessary to reduce the standby time beyond exposure to further improve the productivity.
Disclosure of Invention
The present invention has for its object to overcome the above-mentioned drawbacks of the prior art and to provide an exposure method for a lithographic apparatus with a rotary swap dual stage.
In order to achieve the above object, the present invention provides an exposure method of a lithographic apparatus having a rotary exchange dual stage, the lithographic apparatus comprising an exposure unit, the exposure unit comprising a measurement station and an exposure station, the dual stage comprising first and second stages correspondingly disposed below the measurement station and the exposure station, the first and second stages being disposed on both sides of a rotating portion and symmetrically disposed, the rotating portion driving the first and second stages to rotate relative to the rotating portion; the measuring station executing step comprises a first measuring step and a second measuring step; the exposure station executing step comprises a first exposure step and a second exposure step; wherein the first measuring step includes measuring a position and an orientation of the wafer to be processed relative to the first or second workpiece stage; the second measuring step comprises measuring the deformation of the wafer to be processed; the first exposure step includes pre-exposure preparation, alignment of the first or second workpiece stage; the second exposure step comprises the step of executing an exposure process on the wafer to be processed; the first and second workpiece tables operate in parallel, and the first measuring step and the first exposing step are synchronously executed; or, the second measuring step and the second exposing step are performed synchronously.
Preferably, a measuring bracket is arranged at the top of the measuring station, and two opposite leveling sensors and a silicon wafer alignment sensor positioned between the leveling sensors are arranged on the measuring bracket; the leveling sensor faces downwards to the outer edge of the wafer to be processed vertically, and the silicon wafer alignment sensor faces downwards to the circle center of the wafer to be processed vertically.
Preferably, the first and second workpiece tables are respectively provided with a measurement and control chip, and the measurement and control chip is positioned at the outer edges of the first and second workpiece tables; the measurement and control chip is also arranged on the rotating part; and the measurement and control chip is provided with a first phase displacement grating and a second phase displacement grating.
Preferably, 3 zero position interferometers are arranged above the first and second workpiece tables, and the zero position interferometers are arranged along the circumference of the crystal to be processed; an alignment mark is arranged on the wafer to be processed; the photomask is provided with a mask reference grating, the photomask is arranged on a mask platform, the mask platform is also provided with an energy sensor and a first reference grating, the energy sensor is respectively arranged on two sides of the photomask, the first reference grating is arranged on the upper side of the photomask, and the lower side of the photomask is also respectively provided with a second reference grating, a third reference grating and a fourth reference grating from top to bottom.
Preferably, the alignment of the first or second workpiece stage includes initial zero alignment of the workpiece stage and precise alignment of the workpiece stage; the initial zero alignment of the workpiece table obtains the initial position of the wafer to be processed through the zero interferometer; the workpiece stage fine alignment includes the first reference grating being aligned with the first phase shift grating and the second reference grating being aligned with the second phase shift grating.
Preferably, after the initial zero alignment of the workpiece stage, the first exposure step further comprises a specular aberration measurement, and the aberration parameters in the exposure process are adjusted by the third reference grating.
Preferably, after the alignment of the first or second workpiece stage, the first exposure step further includes an exposure energy correction that measures the exposure slit uniformity of the exposed wafer in the exposure process through the fourth reference grating, and calibrates the exposure slit uniformity of the wafer to be processed.
Preferably, before the first exposure step, the exposure station performing step further includes an exposure energy calibration step, and the exposure energy calibration step is performed in a process that the rotating portion drives the first and second workpiece tables to rotate relative to the rotating portion.
Preferably, mask measuring gratings are further arranged on the first workpiece table and the second workpiece table; the exposure energy calibration step sets the light source power in the exposure process through the mask reference grating, the mask measurement grating and the energy sensor.
Preferably, the lithographic apparatus further comprises a transfer unit for transferring the exposed wafer on the first or second stage to a post-station; or, transferring the wafer to be processed from the front station to the first or the second workpiece stage, positioning the wafer to be processed and generating positioning parameters.
It can be seen from the above technical solution that the present invention provides an exposure method of a lithographic apparatus having a rotary swap dual stage, wherein the first measurement step and the first exposure step are performed simultaneously by parallel operation of the first and second stages; or, the second measuring step and the second exposing step are synchronously executed, so that the exposure precision is improved and the productivity bottleneck is optimized.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a measuring support, a first and a second workpiece stage according to an embodiment of the invention;
FIG. 2 is a schematic view of first and second workpiece stages according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a photomask blank according to an embodiment of the present invention.
Detailed Description
In order to make the contents of the present invention more clear and understandable, the contents of the present invention will be further described with reference to the accompanying drawings. Of course, the invention is not limited to this particular embodiment, and common alternatives known to those skilled in the art are also encompassed within the scope of the invention.
In the following detailed description of the embodiments of the present invention, the structures of the present invention are not drawn to a general scale, and the structures in the drawings are partially enlarged, deformed, and simplified, so that the present invention should not be construed as being limited thereto.
To make the objects, technical solutions and advantages of the present invention more apparent, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which fig. 1 is a schematic view of a measuring stand, a first and a second workpiece tables according to an embodiment of the present invention; FIG. 2 is a schematic view of first and second workpiece stages according to an embodiment of the invention; FIG. 3 is a schematic diagram of a photomask blank according to an embodiment of the present invention.
The lithographic apparatus of the present invention includes a transfer unit and an exposure unit. The conveying unit is used for conveying the exposed wafer on the first or second workpiece table to a rear station; or, transferring the wafer to be processed from the front station to the first or the second workpiece stage, positioning the wafer to be processed and generating positioning parameters. The transfer unit includes an electromechanical arm, in this embodiment, the exposure unit is connected to the developing unit, and the transfer unit is located between the exposure unit and the developing unit, where the electromechanical arm is used to transfer the exposed wafer on the first or second workpiece stage to a station to be developed of the developing unit, or transfer the wafer to be processed from the station to be lithographically developed of the developing unit to the first or second workpiece stage. The electric mechanical arm is controlled by the brushless permanent magnet servo motor and the closed-loop control circuit, has more than two degrees of freedom, and prevents backlog or overlong waiting time of wafers to be processed caused by delay and interruption of transmission signals due to overlong measuring or exposure time. In another embodiment, the exposed wafer is transferred to the first or the second workpiece stage again by the transferring unit for re-exposure treatment, and the specific front station and the back station are not limited herein according to the actual production situation.
The exposure unit comprises a measuring station and an exposure station, the double workpiece tables comprise a first workpiece table and a second workpiece table which are correspondingly arranged below the measuring station and the exposure station, and the first workpiece table and the second workpiece table are respectively arranged on two sides of the rotating part and are symmetrically arranged. The rotating part drives the first and second workpiece tables to rotate relative to the rotating part. In another embodiment, the first and second work stations (short range stations) are disposed together on both ends of one rotary station (long range station). The rotary platform can drive the first and second workpiece tables to exchange positions between the measuring station and the exposure station through horizontal rotation. And the first and second workpiece tables are respectively provided with a measurement and control chip, the measurement and control chip is positioned at the outer edges of the first and second workpiece tables, and the measurement and control chip is provided with a first phase displacement grating and a second phase displacement grating.
As shown in fig. 1, in the embodiment of the invention, a first workpiece table 1 and a second workpiece table 2 are respectively arranged on the left side and the right side, a rotating part for connecting the first workpiece table 1 and the second workpiece table 2 is arranged in the middle, and measurement and control pieces are respectively arranged on the left side and the right side of the first workpiece table 1 and the right side of the second workpiece table 2, wherein the measurement and control piece positioned on the right side of the first workpiece table 1 is arranged on the rotating part. In this embodiment, the first workpiece stage 1 is used to describe the measuring station, and the second workpiece stage 2 is used to describe the exposing station, and after the operations on the wafers to be processed placed on the first and second workpiece stages are completed, the first and second workpiece stages are rotated horizontally relative to each other to realize the position exchange between the measuring station and the exposing station, which is not limited herein.
The top of the measuring station is provided with a measuring bracket, and the measuring bracket is provided with two opposite leveling sensors and a silicon wafer alignment sensor positioned between the leveling sensors; the leveling sensor faces downwards to the outer edge of the wafer to be processed on the first workpiece table 1 vertically, and the silicon wafer alignment sensor faces downwards to the circle center of the wafer to be processed vertically. Measuring the measurement and control chip correspondingly through the leveling sensor to obtain the vertical distance between the first or second workpiece table and the measuring bracket; and measuring the measurement and control chip through the silicon chip alignment sensor to obtain the position of the first or second workpiece table relative to the horizontal direction of the measurement bracket.
And 3 zero interferometers are respectively arranged above the first workpiece table and the second workpiece table, and are arranged along the circumferential edge of the crystal to be processed.
As shown in fig. 2, two zero interferometers are arranged above two corners of the outer edges of the first and second workpiece tables, and a third zero interferometer is arranged above one corner of the inner edge connected with the rotating part, and the third zero interferometer can be arranged above any one corner of the two corners of the inner edge connected with the rotating part. Mask measuring gratings are respectively arranged on the first workpiece table and the second workpiece table, and are used for corresponding to mask reference gratings on a photomask on the mask table so as to realize exposure alignment. As shown in fig. 2, a transmission image sensor measurement grating is further provided between the zero interferometer at one side of the first and second workpiece stages and the wafer to be processed. In this embodiment, the rotating portion is provided with a pupil aberration sensor measurement grating, as shown in fig. 2, which is disposed on a side adjacent to the third null interferometer for alignment of the rotating portion.
And a mask reference grating is arranged on the photomask, and the mask reference grating is used for aligning the measurement and control chip so as to enable the photomask platform to be roughly positioned relative to the first or the second workpiece platform. The photomask is arranged on a mask platform, an energy sensor and a first reference grating are further arranged on the mask platform, the energy sensor is respectively arranged on two sides of the photomask, the first reference grating is arranged on the upper side of the photomask, and a second reference grating, a third reference grating and a fourth reference grating are further respectively arranged on the lower side of the photomask from top to bottom.
As shown in fig. 3, the photomask is electrostatically adsorbed on the mask stage, the energy sensors are respectively arranged at the left side and the right side of the photomask, a first reference grating is arranged at the upper part of the photomask, a second reference grating, a third reference grating and a fourth reference grating are respectively arranged from top to bottom on the mask stage, in this embodiment, as shown in fig. 3, the second reference grating comprises a TIS reference grating 2, the third reference grating comprises an imaging reference grating, and the fourth reference grating comprises a light spot and a slit reference grating. Wherein the second reference grating works together with the first reference grating for alignment between the first and second work tables and the photomask. The third reference grating is used for measuring mirror aberration; the fourth reference grating is used for energy control in the exposure process.
The above is merely illustrative of the embodiments of the present invention, and the present invention is not limited thereto. The exposure method of the lithographic apparatus with a rotary swap dual stage according to the present invention will be described below with reference to specific embodiments.
And conveying and positioning the wafer to be processed from the front station through a conveying unit, and generating positioning parameters.
In this embodiment, the transfer unit includes an atmospheric transfer unit and a vacuum transfer unit, and the transfer of the wafer to be processed or the exposed wafer is performed by an electromechanical arm having two or more degrees of freedom disposed in the atmospheric transfer unit and the vacuum transfer unit. The wafer to be processed passes through the atmosphere conveying unit, is conveyed to the vacuum conveying unit, and is conveyed to the measuring station of the exposure unit through the electromechanical arm.
The measuring station executing step comprises a first measuring step and a second measuring step.
First, a first wafer to be processed is transferred to a measuring station of an exposure unit via the electromechanical arm, and a first measuring step is performed on the first or second workpiece stage.
The first measuring step includes measuring a position and an orientation of the wafer to be processed relative to the first or second workpiece stage; the second measuring step includes measuring an amount of deformation of the wafer to be processed.
Specifically, according to first positioning information of the first wafer to be processed on the conveying unit, first pre-aligning the first wafer to be processed, and measuring an initial position of the first wafer to be processed through a zero interferometer on the first or second workpiece stage; measuring a measurement and control piece on the first or second workpiece table through the leveling sensor to obtain the vertical distance between the first or second workpiece table and a measuring bracket; and measuring a measurement and control piece on the first or second workpiece table through the silicon wafer alignment sensor to obtain the horizontal position of the first workpiece table relative to the measuring bracket.
And then, performing rough height positioning and rough alignment on the first wafer to be processed.
Specifically, the leveling sensor measures an edge non-leveling area of the first wafer to be processed. Performing alignment scanning on the focal plane to determine the height of a first wafer to be processed by using the initial positioning silicon wafer plane; and an alignment mark is arranged on the first wafer to be processed, the alignment mark is measured by a silicon wafer alignment sensor, the rotation angle of the silicon wafer is preliminarily determined, and preparation is made for subsequent fine alignment.
Then, a second measurement step is performed on the first wafer to be processed, the second measurement step including measuring an amount of deformation of the wafer to be processed.
Specifically, the second measurement step measures the surface flatness of the first wafer to be processed, which is translated under the leveling sensor, thereby measuring the vertical height of the first wafer to be processed with respect to the first or second work stage.
After the second measuring step is completed, the rotating part drives the first workpiece table and the second workpiece table to rotate, and the first workpiece table or the second workpiece table rotates from the measuring station to the exposing station. Meanwhile, the conveying unit conveys the second wafer to be processed to the empty second or first workpiece stage, the second wafer to be processed performs a first measurement step and a second measurement step at the measurement station, and the step of the second wafer to be processed at the measurement station is the same as the step of the first wafer to be processed at the measurement station, which is not described herein. In this embodiment, a cylindrical grating ruler is disposed above the rotating portion, and the rotating magnetic levitation motor disposed corresponding to the cylindrical grating ruler drives the first and second workpiece tables to switch between the measuring station and the exposing station.
And the first wafer to be processed is positioned on the first or the second workpiece table after being rotated and positioned at an exposure station, and a first exposure step and a second exposure step are executed. The first exposure step includes pre-exposure preparation, alignment of the first or second workpiece stage; the second exposure step includes performing an exposure process on the wafer to be processed.
In this embodiment, before the first exposure step, the exposure station performing step further includes an exposure energy calibration step, and the exposure energy calibration step is performed in a process in which the rotating portion drives the first and second workpiece tables to rotate relative to the rotating portion. Mask measuring gratings are further arranged on the first workpiece table and the second workpiece table; the exposure energy calibration step sets the light source power in the exposure process through the mask reference grating, the mask measurement grating and the energy sensor.
Specifically, a mask reference grating is arranged on the photomask, and the combined action of the mask reference grating on the photomask, the mask measuring grating on the first or second workpiece table and the two energy sensors on the photomask platform is completed. In this embodiment, the mask measurement grating includes a small Kong Guangjiang sensor and an exposure slit sensor measurement grating that prepares the first wafer to be processed for pre-exposure preparation by measuring the exposure slit edge to obtain source energy control and dose evaluation of the exposed wafer during the exposure process. This step is accomplished simultaneously during rotation of the first or second workpiece stage from the measurement station to the exposure station.
And then, preparing the first wafer to be processed before exposure, namely adjusting the exposure energy and the exposure light intensity required by the exposure process by the exposure unit according to an exposure energy calibration step.
Then, performing alignment of the first or second workpiece stage, the alignment of the first or second workpiece stage including initial zero alignment of the workpiece stage and precision alignment of the workpiece stage; the initial zero alignment of the workpiece table obtains the initial position of the wafer to be processed through the zero interferometer; the workpiece stage fine alignment includes the first reference grating being aligned with the first phase shift grating and the second reference grating being aligned with the second phase shift grating.
Specifically, the initial position of the first wafer to be processed is measured by three zero interferometers, and after the initial zero alignment of the workpiece stage, the first exposure step further includes specular aberration measurement, and aberration parameters in the exposure process are adjusted by the third reference grating. Since the mirror surface of the exposure device is heated under the conditions of higher energy and light intensity, the mirror surface is compensated by the related aberration parameters. And carrying out mirror aberration measurement on the first wafer to be processed to ensure the exposure quality.
And then, performing workpiece stage precise alignment, wherein the workpiece stage precise alignment aligns the first phase shift grating through the first reference grating, aligns the second phase shift grating through the second reference grating, and precisely positions the first or second workpiece stage through a photomask so as to obtain the optimal imaging position relative to the exposure stage.
Then, exposure energy correction is performed. Specifically, the fourth reference grating measures the uniformity of the exposure slit of the exposed wafer in the exposure process, and calibrates the uniformity of the exposure slit of the wafer to be processed. Preferably, the exposure energy correction is performed at each wafer to be processed. It should be noted that, the first wafer to be processed completes a first exposure step on the first or second workpiece stage; and the second wafer to be processed synchronously completes a first measurement step on the second or first workpiece stage in parallel.
And finally, executing a second exposure step by the first wafer to be processed, and synchronously executing a second measurement step by the second wafer to be processed in parallel.
Then, the rotating part drives the first workpiece table and the second workpiece table to rotate, and the first workpiece table or the second workpiece table rotates from the exposure station to the measurement station; the second or first workpiece stage rotates from the measurement station to the exposure station. The transfer unit unloads the first wafer to be processed and transfers a third wafer to be processed to the first or second stage. The first and second work tables have 6 degrees of freedom with respect to the rotating portion, whereby parallel operation of the exposure station and the measuring station is achieved.
In this embodiment, there are several lots of wafers to be processed waiting for exposure by the exposure apparatus, and before each lot of work, the exposure apparatus performs alignment of the photomask and the first and second work tables, and fine adjustment of wafer lot parameters.
Specifically, the alignment steps of the photomask and the first and second workpiece tables are the same as those of the photomask and the first and second workpiece tables of the first wafer to be processed, and will not be described herein. Wafer lot parameter tuning includes aligning the objective lens system with the optical aberration sensors on the photomask to the measurement and control chips on the first and second workpiece tables, optimizing the mirror parameters to ensure the imaging effect, and completing the fine alignment of the photomask table and the first and second workpiece tables.
The first measuring step and the first exposing step are synchronously executed through the parallel operation of the first workpiece stage and the second workpiece stage; or, the second measuring step and the second exposing step are synchronously executed, so that the exposure precision is improved and the productivity bottleneck is optimized.
The foregoing description is only of the preferred embodiments of the present invention, and the embodiments are not intended to limit the scope of the invention, so that all changes made in the equivalent structures of the present invention described in the specification and the drawings are included in the scope of the invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The exposure method of the lithography device with the rotary exchange double workpiece tables is characterized in that the lithography device comprises an exposure unit, the exposure unit comprises a measuring station and an exposure station, the double workpiece tables comprise a first workpiece table and a second workpiece table which are correspondingly arranged below the measuring station and the exposure station, the first workpiece table and the second workpiece table are respectively arranged on two sides of a rotating part and are symmetrically arranged, and the rotating part drives the first workpiece table and the second workpiece table to rotate relative to the rotating part; the measuring station executing step comprises a first measuring step and a second measuring step; the first workpiece table and the second workpiece table are respectively provided with a measurement and control chip, and the measurement and control chip is positioned at the outer edges of the first workpiece table and the second workpiece table; the measurement and control chip is provided with a first phase displacement grating and a second phase displacement grating; the exposure station is provided with a mask platform, a photomask, a mask reference grating arranged on the photomask and energy sensors respectively arranged on two sides of the photomask are arranged on the mask platform, and a first reference grating and a second reference grating are respectively arranged on the upper side and the lower side of the photomask; the exposure station executing step comprises a first exposure step and a second exposure step; wherein,
The first measuring step includes measuring a position and an orientation of a wafer to be processed relative to the first or second workpiece stage; the second measuring step comprises measuring the deformation of the wafer to be processed;
The first exposure step includes pre-exposure preparation, alignment of the first or second workpiece stage; the second exposure step comprises the step of executing an exposure process on the wafer to be processed;
the first and second workpiece tables operate in parallel, and the first measuring step and the first exposing step are synchronously executed; or, the second measuring step and the second exposing step are performed synchronously.
2. The method of exposing a lithographic apparatus having a rotary swap dual stage according to claim 1, wherein the top of the measurement station is provided with a measurement stand, the measurement stand is provided with two opposing leveling sensors, and a silicon wafer alignment sensor located between the leveling sensors; the leveling sensor faces downwards to the outer edge of the wafer to be processed vertically, and the silicon wafer alignment sensor faces downwards to the circle center of the wafer to be processed vertically.
3. The exposure method of a lithographic apparatus having a rotary swap dual stage according to claim 1, wherein the monitor panel is further provided on the rotary part.
4. The exposure method of a lithographic apparatus having a rotary swap dual stage according to claim 3, wherein 3 zero position interferometers are provided above the first and second stages, the zero position interferometers being provided along the circumference of the wafer to be processed; an alignment mark is arranged on the wafer to be processed; and a third reference grating and a fourth reference grating are sequentially arranged on the lower side of the second reference grating.
5. The method of exposing a lithographic apparatus having a rotary swap dual stage according to claim 4, wherein the alignment of the first or second stage comprises an initial zero alignment of the stage, and a fine alignment of the stage; the initial zero alignment of the workpiece table obtains the initial position of the wafer to be processed through the zero interferometer; the workpiece stage fine alignment includes the first reference grating being aligned with the first phase shift grating and the second reference grating being aligned with the second phase shift grating.
6. The method of claim 5, wherein after initial zero alignment of the stage, the first exposing step further comprises specular aberration measurement, and aberration parameters in the exposure process are adjusted by the third reference grating.
7. The method of claim 5, wherein after alignment of the first or second stage, the first exposure step further comprises an exposure energy correction that measures an exposure slit uniformity of an exposed wafer in an exposure process through the fourth reference grating and calibrates the exposure slit uniformity of the wafer to be processed.
8. The exposure method of claim 4, wherein the exposure station performing step further includes an exposure energy calibration step before the first exposure step, and the exposure energy calibration step is performed while the rotating portion rotates the first and second stages relative to the rotating portion.
9. The method of exposing a lithographic apparatus having a rotary swap dual stage according to claim 8, wherein the first and second stages are further provided with mask measurement gratings; the exposure energy calibration step sets the light source power in the exposure process through the mask reference grating, the mask measurement grating and the energy sensor.
10. The exposure method of a lithographic apparatus having a rotary swap dual stage according to claim 1, wherein the lithographic apparatus further comprises a transfer unit for transferring the exposed wafer on the first or second stage to a post-station; or, transferring the wafer to be processed from the front station to the first or the second workpiece stage, positioning the wafer to be processed and generating positioning parameters.
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| CN113804112A (en) * | 2021-08-16 | 2021-12-17 | 北京华卓精科科技股份有限公司 | Displacement measurement system and lithographic apparatus |
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