CN112825286A - Capacitor and preparation method thereof - Google Patents
Capacitor and preparation method thereof Download PDFInfo
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- CN112825286A CN112825286A CN201911152619.3A CN201911152619A CN112825286A CN 112825286 A CN112825286 A CN 112825286A CN 201911152619 A CN201911152619 A CN 201911152619A CN 112825286 A CN112825286 A CN 112825286A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title description 8
- 239000010409 thin film Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000003792 electrolyte Substances 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910021389 graphene Inorganic materials 0.000 claims description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 11
- 239000011259 mixed solution Substances 0.000 claims description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- XQHAGELNRSUUGU-UHFFFAOYSA-M lithium chlorate Chemical compound [Li+].[O-]Cl(=O)=O XQHAGELNRSUUGU-UHFFFAOYSA-M 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 claims description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 6
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002042 Silver nanowire Substances 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 229920000428 triblock copolymer Polymers 0.000 claims description 3
- 238000009987 spinning Methods 0.000 claims 1
- 210000000225 synapse Anatomy 0.000 abstract description 8
- 210000005036 nerve Anatomy 0.000 abstract description 5
- 238000013473 artificial intelligence Methods 0.000 abstract description 2
- 230000000638 stimulation Effects 0.000 description 14
- 230000006870 function Effects 0.000 description 7
- 239000004372 Polyvinyl alcohol Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 description 5
- 238000013528 artificial neural network Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- -1 Polyethylene terephthalate Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 210000004556 brain Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 230000001537 neural effect Effects 0.000 description 2
- 210000002569 neuron Anatomy 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002064 nanoplatelet Substances 0.000 description 1
- 235000001968 nicotinic acid Nutrition 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000003518 presynaptic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/003—Apparatus or processes for encapsulating capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/224—Housing; Encapsulation
Abstract
The present invention provides a capacitor, comprising: a substrate (1) on which a first electrode (2), a second electrode (3) and a thin film (4) are formed; the thin film (4) comprises two parts of thin films which are respectively connected with the first electrode (2) and the second electrode (3), the two parts of thin films form a pair of interdigital electrodes (5), electrolyte (6) is filled between the pair of interdigital electrodes (5), and the electrolyte (6) is in contact with the substrate (1); the capacitor can simulate the nerve synapse, and is further applied to the field of artificial intelligence.
Description
Technical Field
The invention relates to the fields of flexible electronic devices, micro capacitors and bionics, in particular to a capacitor and a preparation method thereof.
Background
With the rapid development of the information field, people expect that the way of processing information in the future can perform autonomous learning and thinking like the brain, so that the artificial neural network is constructed by using electronic devices, and the abstract simulation of the artificial neural network from the information processing point of view becomes a hot point for the research of a new generation of computer systems. The neurosynaptic is a site where functional connection between neurons in the brain occurs, its own plasticity is considered as a basis for biological learning and memory, and the function of the simulated synapse is considered as a key step in constructing an artificial neural network. The traditional method of combining a plurality of transistors and capacitors is a feasible scheme for constructing the artificial neural network, but the application of the scheme is limited due to the complex preparation process and high energy consumption of devices.
In the field of simulated nerve synapses, discrete devices of artificial synapse units developed at present, including two-terminal device atom switches, memristors, ion/electron hybrid transistors, ferroelectric transistors and three-terminal nerve morphors, all require external power sources as energy sources, so that the environment is not environment-friendly enough. Meanwhile, as the demand of people for wearable electronics is higher and higher, the devices are prepared from rigid substrates, so that the prepared devices have low applicability.
The neuromorphic device and the system based on the double electric layer transistor realize the functions of exciting post-emergent current and double-pulse facilitation of biological synapses, and although the functions can realize short-time facilitation and double-pulse facilitation, the device cannot be widely applied to wearable electronic equipment due to the rigid substrate of a single device.
Disclosure of Invention
Technical problem to be solved
The invention provides a capacitor and a preparation method thereof, which are at least used for solving the problems of complex preparation process, high energy consumption of devices and non-wearing.
(II) technical scheme
The present invention provides a capacitor, comprising: a substrate 1 on which a first electrode 2, a second electrode 3 and a thin film 4 are formed; the thin film 4 comprises two parts of thin films which are respectively connected with the first electrode 2 and the second electrode 3, the two parts of thin films form a pair of interdigital electrodes 5, electrolyte 6 is filled between the pair of interdigital electrodes 5, and the electrolyte 6 is in contact with the substrate 1.
Alternatively, the distance range between the interdigital electrodes 5 is greater than 0 and equal to or less than 0.2 mm.
Optionally, the film 4 is a graphene film.
Optionally, the substrate 1 is a flexible substrate that is bendable.
Optionally, the first electrode 2 and the second electrode 3 are flexible stretchable electrodes, and the flexible stretchable electrodes are at least one of silver nanowires, carbon tubes, and graphene.
Optionally, the electrolyte 6 is a lithium chlorate solution.
A device comprises a plurality of capacitors which are interconnected by first and second electrodes 2, 3.
A method of making a capacitor comprising: s1, preparing a thin film 4 on the substrate 1, and preparing an interdigital electrode 5 on the thin film 4; s2, filling electrolyte 6 between the interdigital electrodes 5, and packaging the film 4; s3, the first electrode 2 and the second electrode 3 are formed at opposite edges of the film 4, resulting in a capacitor.
Alternatively, in step S1, the preparing the thin film 4 on the substrate 1 includes: and spin-coating the mixed solution of polyvinylidene fluoride, graphene and N, N-dimethylformamide on the substrate 6, and heating to form the film 4.
Alternatively, in step S3, preparing the first electrode 2 and the second electrode 3 outside the two opposite edges of the thin film 4 includes: the flexible stretchable material is added to a mixed solution of triblock copolymers of styrene, toluene and isoprene, and then spin-coated on opposite edges of the thin film 4.
(III) advantageous effects
1. The interdigital electrodes and the electrolyte between the interdigital electrodes have high inosculation degree with biological nerve synapse behaviors, can simulate nerve synapses, and is further applied to the field of artificial intelligence;
2. the electrode material of the interdigital electrode comprises graphene microchip, and can be applied to the fields of automobiles, standby power supplies, renewable energy sources and uninterrupted energy sources;
3. the super capacitor provided by the invention has the advantages of simple structure and easiness in preparation, and the flexible substrate is used, so that the super capacitor provided by the invention has the characteristic of being flexible and is suitable for industrial production;
4. the length range of the super capacitor provided by the invention is 30-40mm, the width range is 15-20mm, and the single capacitors can be connected through the conducting wire to form the super capacitor array, so that the super capacitor array can be applied to complex sensitive, non-empirical and empirical learning functions.
Drawings
Fig. 1 schematically shows a structural view of a capacitor provided by an embodiment of the present invention;
FIG. 2 is a flow chart schematically illustrating a method for fabricating a capacitor according to an embodiment of the present invention;
FIG. 3 schematically illustrates a neural activity output graph provided by an embodiment of the present invention;
FIG. 4 is a graph schematically illustrating the variation of output voltage with stimulation current provided by an embodiment of the present invention;
FIG. 5 is a graph schematically illustrating output voltage as a function of stimulation time, provided by an embodiment of the present invention;
FIG. 6 schematically illustrates a graph of capacitor double pulse facilitation over time provided by an embodiment of the present invention;
FIG. 7 is a graph schematically illustrating the change in the two-pulse facilitation index of a capacitor over time provided by an embodiment of the present invention;
fig. 8 schematically shows a relationship among the frequency characteristic, the output voltage, and time of the capacitor provided by the embodiment of the present invention.
Description of reference numerals: 1-a substrate; 2-a first electrode; 3-a second electrode; 4-a film; 5-interdigital electrodes; 6-electrolyte.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
Referring to fig. 1, fig. 1 schematically illustrates a structure of a capacitor provided in an embodiment of the present invention; the capacitor includes: a substrate 1 on which a first electrode 2, a second electrode 3 and a thin film 4 are formed; the thin film 4 includes two portions of thin films, one of which is denoted by 41 and the other of which is denoted by 42, in this embodiment, the thin film 41 is a negative electrode, the thin film 42 is a positive electrode, the thin film 41 and the thin film 42 are respectively connected to the first electrode 2 and the second electrode 3, the two portions of thin films form a pair of interdigital electrodes 5, an electrolyte 6 is filled between the pair of interdigital electrodes 5, and the electrolyte 6 is in contact with the substrate 1. Wherein, the distance range between the interdigital electrodes 5 is more than 0 and less than 0.2mm, and the smaller the distance is, the higher the capacitance of the capacitor is.
In this embodiment, the substrate 1 is a flexible substrate, and the flexible substrate may be, for example, Polyethylene terephthalate (PET), Polyimide (PI), Polydimethylsiloxane (PDMS), or a Polyurethane (PU), and the specific material is not limited in particular.
In this embodiment, the film 4 is a graphene film, and the graphene film has an advantage of good conductivity when used as a capacitor material.
In this embodiment, the first electrode 2 and the second electrode 3 are flexible stretchable electrodes, the flexible stretchable electrodes are made of at least one of silver nanowires, carbon tubes and graphene, the flexible stretchable electrodes have a length ranging from 5mm to 10mm, a width ranging from 5mm to 10mm and a thickness ranging from 0.1mm to 0.5mm, and the electrodes of the flexible stretchable electrodes may be circular or n-sided, where n is greater than or equal to 3.
In this embodiment, the substrate length of the capacitor is 30mm to 40mm, and the substrate width is 15mm to 20 mm.
The embodiment of the invention also provides a device, the device comprises a plurality of capacitors, the plurality of capacitors are connected with each other through the first electrode 2 and the second electrode 3, an m × n device array can be manufactured, the first electrode 2 and the second electrode 3 can be connected through a lead, for example, and the formed device can realize complex joint learning functions such as sensitivity, non-empirical mode, empirical mode and the like.
The embodiment of the present invention further provides a method for manufacturing a capacitor, and referring to fig. 2, fig. 2 schematically illustrates a flowchart of a method for manufacturing a capacitor according to the embodiment of the present invention, where the method includes:
s1, preparing a thin film 4 on the substrate 1, and preparing the interdigital electrode 5 on the thin film 4.
Wherein the above-mentioned preparing the thin film 4 on the substrate 1 comprises: firstly, respectively ultrasonically cleaning a substrate 1 by using acetone, ethanol or water to obtain a cleaned substrate 1;
then, 0.15g of graphene microchip and 6ml of N, N-Dimethylformamide (DMF) are mixed and subjected to ultrasonic treatment to obtain a mixed solution 1;
next, 0.1g of polyvinylidene fluoride (- (CH)2-CF2)nPVDF) is added into the mixed solution A, mixed solution B is obtained after stirring, the mixed solution B is dripped onto the substrate 1, and the substrate 1 is heated for 2 hours at the temperature of 100 ℃ to obtain a film 4;
finally, the interdigital electrode 5 is produced on the thin film 4 using a laser marking machine.
In this embodiment, the mass of the graphene nanoplatelets, the volume of DMF, the mass of PVDF, the stirring time, the heating temperature, and the heating time are not particularly limited.
And S2, filling electrolyte 6 between the interdigital electrodes 5 and packaging the film 4.
Adding 3g of polyvinyl alcohol (PVA) into 20ml of deionized water, and then carrying out oil bath for 1 hour at the heating temperature of 95 ℃ to obtain a PVA solution; preparing 10ml of 2mol/ml lithium chlorate solution, and dropwise adding the lithium chlorate solution into the PVA solution to obtain electrolyte 6;
and dripping an electrolyte 6 between the interdigital electrodes 5, contacting the electrolyte 6 with the substrate 1, and packaging the film 4.
In this example, the PVA quality, the volume of deionized water, the oil bath temperature, the oil bath time, and the concentration and volume of the lithium chlorate solution are not particularly limited.
S3, the first electrode 2 and the second electrode 3 are formed at opposite edges of the film 4, resulting in a capacitor.
After the flexible stretchable material is added into a mixed solution of triblock copolymer consisting of styrene, toluene and isoprene, the mixture is coated on two opposite edges of the thin film 4 in a spin coating mode, the mixed solution formed by the flexible stretchable material is contacted with the interdigital electrodes 5, and the first electrode 2 and the second electrode 3 are formed after the mixed solution formed by the flexible stretchable material is dried, so that the capacitor is obtained.
For the dimensional parameters and material types of the structures in the preparation method, reference is made to the above-mentioned structural embodiments, which are not described herein again.
Referring to fig. 3, fig. 3 schematically illustrates a neural activity output graph provided by an embodiment of the present invention. After a pulse signal is given to the capacitor at a certain moment, the output voltage of the capacitor is rapidly increased in a very short time range and then is reduced along with the time, and the reduction process is that the output voltage is rapidly reduced in a very short time firstly and is converted into a gentle reduction after a certain output voltage value is reached. FIG. 3 is a graph showing the time characteristics of a capacitor according to an embodiment of the present invention, which can verify that the capacitor according to an embodiment of the present invention has the characteristics of a neurosynaptic signal. Referring to fig. 4, fig. 4 is a graph schematically illustrating the variation of the output voltage with the stimulation current according to the embodiment of the present invention. When the stimulus current is 0, the output voltage of the capacitor in the embodiment of the present invention also shows 0, and after the intensity of the stimulus current is gradually increased, the intensity of the output voltage is also gradually increased, so that when an external stimulus current is applied to the capacitor in the embodiment, an output voltage value uniquely corresponding to the external stimulus current can be obtained.
Referring to fig. 5, fig. 5 is a graph schematically illustrating the variation of the output voltage with stimulation time according to the embodiment of the present invention. As can be seen from fig. 5, at the initial time, the capacitor in this embodiment has a specific voltage value, and when the stimulation time is gradually increased, the output voltage of the capacitor is gradually increased, but the rate of the increase of the output voltage of the capacitor along with the stimulation time is gradually decreased along with the increase of the stimulation time.
Referring to fig. 6, fig. 6 schematically illustrates a graph of capacitor double pulse facilitation over time, as provided by an embodiment of the present invention. When the capacitor in this embodiment is stimulated with double pulses, two peaks of output voltage varying with stimulation time are obtained, and the second peak increases by a larger magnitude than the first peak, which reflects the fact that the capacitor in this embodiment has a double-pulse facilitation (PPF) characteristic of synapses, with an intermediate neuron function and a pre-synaptic action mechanism in patch-clamp reactions.
Referring to fig. 7, fig. 7 is a graph schematically illustrating the change of the two-pulse facilitation index of the capacitor over time according to an embodiment of the present invention. As the stimulation time was increased, the PPF index decreased, indicating that the link between successive stimulation pulses decreased as the stimulation time increased.
Referring to fig. 8, fig. 8 schematically illustrates a relationship diagram between the frequency characteristic, the output voltage and the time of the capacitor provided by the embodiment of the present invention. As the stimulation time increases, the magnitude of the increase in output voltage is greater as the stimulation frequency increases, indicating that the magnitude of the increase in stimulation intensity corresponding to the output voltage is also greater.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A capacitor, comprising:
a substrate (1) on which a first electrode (2), a second electrode (3) and a thin film (4) are formed;
the thin film (4) comprises two parts of thin films which are respectively connected with the first electrode (2) and the second electrode (3), a pair of interdigital electrodes (5) are formed by the two parts of thin films, electrolyte (6) is filled between the pair of interdigital electrodes (5), and the electrolyte (6) is in contact with the substrate (1).
2. Capacitor according to claim 1, wherein the distance between the interdigitated electrodes (5) ranges not more than 0.2 mm.
3. Capacitor according to claim 1, wherein the film (4) is a graphene film.
4. The capacitor according to claim 1, wherein the substrate (1) is a bendable flexible substrate.
5. The capacitor according to claim 1, wherein the first electrode (2), the second electrode (3) are flexible stretchable electrodes, the flexible stretchable electrodes being at least one of silver nanowires, carbon tubes and graphene.
6. The capacitor according to claim 1, wherein the electrolyte (6) is a lithium chlorate solution.
7. A device comprising a plurality of capacitors as claimed in any one of claims 1 to 6, which are interconnected by means of the first electrode (2) and the second electrode (3).
8. A method of making a capacitor comprising:
s1, preparing a thin film (4) on a substrate (1), and preparing interdigital electrodes (5) on the thin film (4);
s2, filling electrolyte (6) between the interdigital electrodes (5) and encapsulating the thin film (4);
s3, preparing a first electrode (2) and a second electrode (3) at two opposite edges of the film (4) to obtain the capacitor.
9. The method of claim 8, wherein the step S1 of preparing the thin film (4) on the substrate (1) comprises:
and spin-coating a mixed solution of polyvinylidene fluoride, graphene and N, N-dimethylformamide on a substrate (6), and heating to form the film (4).
10. The method according to claim 8, wherein the preparing of the first electrode (2) and the second electrode (3) at two opposite edges of the thin film (4) in step S3 comprises:
the flexible stretchable material is added into a mixed solution of triblock copolymer consisting of styrene, toluene and isoprene, and then is coated on two opposite edges of the film (4) in a spinning mode.
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| CN201911152619.3A CN112825286A (en) | 2019-11-20 | 2019-11-20 | Capacitor and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104211047A (en) * | 2013-05-30 | 2014-12-17 | 纳米新能源（唐山）有限责任公司 | Graphene, graphene electrode, graphene supercapacitor and preparation method thereof |
| CN107221447A (en) * | 2017-07-03 | 2017-09-29 | 中国科学院宁波材料技术与工程研究所 | A kind of graphene flexible compound electrode, its preparation method and flexible super capacitor |
| US20180082796A1 (en) * | 2015-05-20 | 2018-03-22 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Supercapacitors with oriented carbon nanotubes and method of producing them |
| CN109841426A (en) * | 2019-01-21 | 2019-06-04 | 宁波石墨烯创新中心有限公司 | Graphene-based flexible electrode and preparation method thereof |
-
2019
- 2019-11-20 CN CN201911152619.3A patent/CN112825286A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104211047A (en) * | 2013-05-30 | 2014-12-17 | 纳米新能源（唐山）有限责任公司 | Graphene, graphene electrode, graphene supercapacitor and preparation method thereof |
| US20180082796A1 (en) * | 2015-05-20 | 2018-03-22 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Supercapacitors with oriented carbon nanotubes and method of producing them |
| CN107221447A (en) * | 2017-07-03 | 2017-09-29 | 中国科学院宁波材料技术与工程研究所 | A kind of graphene flexible compound electrode, its preparation method and flexible super capacitor |
| CN109841426A (en) * | 2019-01-21 | 2019-06-04 | 宁波石墨烯创新中心有限公司 | Graphene-based flexible electrode and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| HEE UK LEE 等: "《Effect of gel electrolytes on the performance of a minimized flexible micro-supercapacitor based on graphene/PEDOT composite using pen lithography》", 《JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY》 * |
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