CN112820772A - Floating structure and groove discrete groove gate IGBT device - Google Patents
Floating structure and groove discrete groove gate IGBT device Download PDFInfo
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- CN112820772A CN112820772A CN202110153724.XA CN202110153724A CN112820772A CN 112820772 A CN112820772 A CN 112820772A CN 202110153724 A CN202110153724 A CN 202110153724A CN 112820772 A CN112820772 A CN 112820772A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 238000002955 isolation Methods 0.000 claims abstract description 8
- 210000000746 body region Anatomy 0.000 claims description 12
- 239000011800 void material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 15
- 230000008569 process Effects 0.000 abstract description 14
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a trench gate IGBT device with a floating structure and a trench separated, which comprises: a collector metal; a collector region of a first conductivity type on an upper surface of the collector metal; the field stop layer of the second conduction type is positioned on the upper surface of the collector region of the first conduction type; a drift region of the second conductivity type on an upper surface of the field stop layer of the second conductivity type; a trench structure located within the drift region of the second conductivity type; the first conductive type floating space area is positioned between the groove structures and does not overlap with the groove structures; emitter metal covering the whole device; an isolation dielectric layer is arranged between the first conductive type floating space region and the emitting electrode metal. The invention improves the dv/dt control capability of the IGBT in the switching-on process, reduces the EMI interference in the switching-on and switching-off process, and can improve the device withstand voltage of the IGBT at the same time.
Description
Technical Field
The invention relates to the technical field of power semiconductor devices, in particular to a trench gate IGBT device with a floating structure and a trench separated from each other.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a novel power electronic device compounded by a MOS field effect and a bipolar transistor. The MOSFET has the advantages of large input resistance, easy driving and simple control; and the bipolar transistor has the advantages of low conduction voltage reduction and large on-state current. The composite material has become one of core components in modern power electronic circuits, and is widely applied to the fields of traffic, energy, industry, household appliances and the like.
In the opening process of the existing trench gate IGBT device, due to accumulation of holes on the side wall of the trench, the dv/dt control capability of the IGBT in the opening process is reduced, EMI interference cannot be effectively inhibited, and improvement of the withstand voltage of the IGBT device is difficult to achieve at the same time.
Disclosure of Invention
The invention aims to provide a trench gate IGBT device with a floating structure and a trench separated from each other, which improves the dv/dt control capability of the IGBT in the switching-on process, reduces EMI interference in the switching-on and switching-off process, and can improve the device withstand voltage of the IGBT at the same time.
In order to realize the purpose, the following technical scheme is adopted:
a floating structure and trench separated trench gate IGBT device, comprising:
a collector metal;
a collector region of a first conductivity type on an upper surface of the collector metal;
the field stop layer of the second conduction type is positioned on the upper surface of the collector region of the first conduction type;
a drift region of the second conductivity type on an upper surface of the field stop layer of the second conductivity type;
the groove structure is positioned in the drift region of the second conduction type and extends along the thickness direction of the drift region of the second conduction type; the groove structure comprises a groove, a wide part and a narrow part, wherein the wide part and the narrow part are positioned in the groove;
the first conductive type floating space area is positioned between the groove structures and does not overlap with the groove structures; the minimum distance between the wide part and the first conductive type floating space area is smaller than the minimum distance between the narrow part and the first conductive type floating space area;
emitter metal covering the whole device; an isolation dielectric layer is arranged between the first conductive type floating space region and the emitting electrode metal.
Preferably, the groove structure is of an inverted T-shaped structure, the wide part is located at the transverse end of the inverted T-shaped structure, and the narrow part is located at the vertical end of the inverted T-shaped structure.
Preferably, the wide portion comprises a wide portion electrode and a wide portion medium filled between the wide portion electrode and the inner wall of the groove; the narrow part comprises a narrow part electrode and a narrow part medium filled between the narrow part electrode and the inner side wall of the groove; the wide portion electrode is connected to the narrow portion electrode.
Preferably, the junction depth of the first conductive-type floating-out region is not less than the depth of the narrow-portion electrode.
Preferably, the method further comprises the following steps:
a body region of the second conductivity type located outside the trench structure;
a body region of the first conductivity type on an upper surface of the body region of the second conductivity type;
the upper surface of the body region of the first conductivity type is provided with an emitter region of the first conductivity type and an emitter region of the second conductivity type in parallel, and the emitter region of the second conductivity type is arranged close to the trench structure.
Preferably, the isolation dielectric layer extends to cover the trench structure and a portion of the upper surface of the second conductive type emitter region.
Preferably, the emitter metal is connected to the emitter region of the first conductivity type and the emitter region of the second conductivity type.
By adopting the scheme, the invention has the beneficial effects that:
according to the invention, the floating empty area of the first conduction type is designed not to be overlapped with the groove structure, so that a large amount of accumulation of cavities on the side wall of the groove in the opening process of the IGBT is effectively prevented, thereby reducing the displacement current, improving the dv/dt control capability in the opening process of the IGBT and effectively reducing the EMI noise. Meanwhile, the wide part of the inverted T-shaped groove structure effectively reduces the distance between the groove structure and the first conductive type floating space area, so that the electric field peak value at the corner of the wide part is effectively reduced, and the voltage resistance of the IGBT is improved.
Drawings
FIG. 1 is a schematic structural view of the present invention;
wherein the figures identify the description:
1-collector metal, 2-collector region of the first conductivity type,
3-field stop layer of the second conductivity type, 4-drift region of the second conductivity type,
5-a floating space of the first conductivity type, 6-emitter metal,
7-a wide part, 8-a narrow part,
9-body regions of the second conductivity type, 10-body regions of the first conductivity type,
11-an emitter region of a first conductivity type, 12-an emitter region of a second conductivity type,
13-an isolation dielectric layer, 71-a broad width electrode,
72-wide portion dielectric, 81-narrow portion electrode,
82-narrow section medium.
Detailed Description
The invention is described in detail below with reference to the figures and the specific embodiments.
Referring to fig. 1, the present invention provides a trench gate IGBT device with a floating structure and a trench separated from each other, including: a collector metal 1; a collector region 2 of the first conductivity type on the upper surface of the collector metal 1; a field stop layer 3 of the second conductivity type located on the upper surface of the collector region 2 of the first conductivity type; a drift region 4 of the second conductivity type on an upper surface of the field stop layer 3 of the second conductivity type; a trench structure located in the drift region 4 of the second conductivity type and extending in a thickness direction of the drift region 4 of the second conductivity type; the groove structure comprises a groove, a wide part 7 and a narrow part 8 which are positioned in the groove, and the wide part 7 is positioned below the narrow part 8; the first conductive type floating space region 5 is positioned between the groove structures, and the first conductive type floating space region 5 is not overlapped with the groove structures; the minimum distance between the wide part 7 and the first-conductivity-type floating space 5 is smaller than the minimum distance between the narrow part 8 and the first-conductivity-type floating space 5, namely, the distance between the groove structure and the first-conductivity-type floating space 5 is reduced due to the design of the wide part 7; emitter metal 6 covering the whole device; an isolation medium layer 13 is arranged between the first conductive type floating space region 5 and the emitter metal 6.
The groove structure is of an inverted T-shaped structure, the wide part 7 is located at the transverse end of the inverted T-shaped structure, and the narrow part 8 is located at the vertical end of the inverted T-shaped structure. The wide portion 7 includes a wide portion electrode 71, and a wide portion dielectric 72 filled between the wide portion electrode 71 and the inner wall of the trench; the narrow portion 8 comprises a narrow portion electrode 81 and a narrow portion medium 82 filled between the narrow portion electrode 81 and the inner side wall of the groove; the wide portion electrode 71 is connected to the narrow portion electrode 81.
With continued reference to fig. 1, point a is located on the trench sidewall corresponding to narrow portion 8 and point B is located on the trench sidewall corresponding to wide portion 7. In the existing IGBT device structure, because the A point is overlapped with the first conductive type floating area 5, a large amount of holes are accumulated at the A point of the side wall of the groove in the opening process of the IGBT, so that the potential at the A point is suddenly changed, the displacement current of a grid electrode is increased, and the dv/dt in the opening process of the IGBT can not be controlled.
In the invention, the floating area 5 of the first conduction type is not overlapped with the groove structure at the point A and the point B, the point A and the point B are both positioned in the drift area 4 of the second conduction type, and the drift area 4 of the second conduction type is used as a hole barrier, thereby effectively preventing the accumulation of holes at the point, reducing the displacement current of the grid electrode and effectively controlling dv/dt in the turn-on process of the IGBT. Meanwhile, the wide part 7 is arranged below the narrow part 8 of the groove structure, the distance between the B point and the first conductive type floating space area 5 is obviously smaller than the distance between the A point and the first conductive type floating space area 5, and the distance between the groove structure and the first conductive type floating space area 5 is effectively reduced, so that the electric field peak value at the corner of the wide part 7 is effectively reduced, and the voltage resistance of the IGBT is improved. Therefore, the invention can improve the dv/dt control capability of the IGBT, reduce the EMI interference in the switching process, and simultaneously improve the voltage resistance of the IGBT device through the arrangement of the inverted T-shaped groove structure.
The junction depth of the first conductive-type floating gate 5 is not less than the depth of the narrow portion electrode 81. The first conductivity type floating region 5 is electrically floating and not connected to the emitter metal 6.
In addition, the trench gate IGBT device provided by the invention further comprises: a body region 9 of the second conductivity type located outside the trench structure; a body region 10 of the first conductivity type located on the upper surface of the body region 9 of the second conductivity type; the upper surface of the body region 10 of the first conductivity type is provided with an emitter region 11 of the first conductivity type and an emitter region 12 of the second conductivity type in parallel, and the emitter region 12 of the second conductivity type is arranged close to the trench structure. The isolation dielectric layer 13 extends over the trench structure and a portion of the upper surface of the emitter region 12 of the second conductivity type. The emitter metal 6 is connected to an emitter region 11 of the first conductivity type, an emitter region 12 of the second conductivity type.
The first conductive type floating space region 5 between the groove structures is not overlapped with the groove structures, so that a large amount of cavities on the side walls of the grooves are effectively prevented from being accumulated in the opening process of the IGBT, the displacement current is reduced, the dv/dt control capability in the opening process of the IGBT is improved, and the EMI noise is effectively reduced. However, the floating space region 5 of the first conductivity type is not overlapped with the trench structure, which may result in a reduction of the IGBT withstand voltage, and the larger the distance between the floating space region 5 of the first conductivity type and the trench structure is, the lower the withstand voltage is, the more the present invention effectively reduces the distance between the trench structure and the floating space region 5 of the first conductivity type through the wide portion 7 of the inverted T-shaped trench structure, thereby effectively reducing the electric field peak at the corner of the wide portion 7, and improving the IGBT withstand voltage.
In an embodiment, the first conductive type may include a P type, and at this time, the second conductive type may include an N type.
In another embodiment, the first conductive type may include an N-type, and at this time, the second conductive type may include a P-type.
The semiconductor involved in the IGBT device can be made of bulk silicon, silicon carbide, gallium arsenide, indium phosphide, silicon germanium or other semiconductor materials.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. A floating structure and trench-separated trench gate IGBT device is characterized by comprising:
a collector metal;
a collector region of a first conductivity type on an upper surface of the collector metal;
the field stop layer of the second conduction type is positioned on the upper surface of the collector region of the first conduction type;
a drift region of the second conductivity type on an upper surface of the field stop layer of the second conductivity type;
the groove structure is positioned in the drift region of the second conduction type and extends along the thickness direction of the drift region of the second conduction type; the groove structure comprises a groove, a wide part and a narrow part, wherein the wide part and the narrow part are positioned in the groove;
the first conductive type floating space area is positioned between the groove structures and does not overlap with the groove structures; the minimum distance between the wide part and the first conductive type floating space area is smaller than the minimum distance between the narrow part and the first conductive type floating space area;
emitter metal covering the whole device; an isolation dielectric layer is arranged between the first conductive type floating space region and the emitting electrode metal.
2. The trench gate IGBT device with the floating structure separated from the trench according to claim 1, wherein the trench structure is in an inverted T-shaped structure, the wide part is located at the transverse end of the inverted T-shaped structure, and the narrow part is located at the vertical end of the inverted T-shaped structure.
3. The floating structure and trench discrete trench gate IGBT device of claim 1 wherein the wide portion comprises a wide portion electrode and a wide portion dielectric filling between the wide portion electrode and the trench inner wall; the narrow part comprises a narrow part electrode and a narrow part medium filled between the narrow part electrode and the inner side wall of the groove; the wide portion electrode is connected to the narrow portion electrode.
4. The floating structure and trench separated trench gate IGBT device of claim 3, wherein the floating void region of the first conductivity type has a junction depth no less than a depth of the narrow portion electrode.
5. The floating structure and trench separated trench gate IGBT device of claim 1 further comprising:
a body region of the second conductivity type located outside the trench structure;
a body region of the first conductivity type on an upper surface of the body region of the second conductivity type;
the upper surface of the body region of the first conductivity type is provided with an emitter region of the first conductivity type and an emitter region of the second conductivity type in parallel, and the emitter region of the second conductivity type is arranged close to the trench structure.
6. The floating structure and trench separated trench gate IGBT device of claim 5, wherein the isolation dielectric layer extends to cover the trench structure and a portion of the upper surface of the emitter region of the second conductivity type.
7. The floating structure and trench separated trench gate IGBT device of claim 5, wherein the emitter metal is connected to the emitter region of the first conductivity type and the emitter region of the second conductivity type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110153724.XA CN112820772A (en) | 2021-02-04 | 2021-02-04 | Floating structure and groove discrete groove gate IGBT device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110153724.XA CN112820772A (en) | 2021-02-04 | 2021-02-04 | Floating structure and groove discrete groove gate IGBT device |
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| Publication Number | Publication Date |
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| CN112820772A true CN112820772A (en) | 2021-05-18 |
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| CN202110153724.XA Pending CN112820772A (en) | 2021-02-04 | 2021-02-04 | Floating structure and groove discrete groove gate IGBT device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117410322A (en) * | 2023-12-15 | 2024-01-16 | 深圳天狼芯半导体有限公司 | Groove type super junction silicon MOSFET and preparation method |
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2021
- 2021-02-04 CN CN202110153724.XA patent/CN112820772A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117410322A (en) * | 2023-12-15 | 2024-01-16 | 深圳天狼芯半导体有限公司 | Groove type super junction silicon MOSFET and preparation method |
| CN117410322B (en) * | 2023-12-15 | 2024-05-28 | 深圳天狼芯半导体有限公司 | Groove type super junction silicon MOSFET and preparation method |
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