CN112817073B - Infrared wave absorbing device based on principle of non-reflection filter - Google Patents
Infrared wave absorbing device based on principle of non-reflection filter Download PDFInfo
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- CN112817073B CN112817073B CN202011625320.8A CN202011625320A CN112817073B CN 112817073 B CN112817073 B CN 112817073B CN 202011625320 A CN202011625320 A CN 202011625320A CN 112817073 B CN112817073 B CN 112817073B
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- 239000006096 absorbing agent Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 238000003384 imaging method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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Abstract
The invention relates to an infrared wave absorbing device based on a principle of a reflection-free filter, which comprises a plurality of wave absorbing units which are sequentially arranged, wherein each wave absorbing unit comprises a conductive reflecting layer, a dielectric layer and a micro-structure unit layer which are sequentially attached from bottom to top, the micro-structure unit layer is formed by four identical isosceles right triangle units which are rotated around the central point of the micro-structure unit layer by four times, each isosceles right triangle unit consists of a large isosceles right triangle and a small isosceles right triangle, and in each isosceles right triangle unit, the bevel edges of the large isosceles right triangle and the small isosceles right triangle are close to and parallel. The wave absorber has the advantages of simple structure, thin thickness, four absorption peaks in the mid-infrared band of 4.1-4.7 mu m, high absorption rate and great application potential in the fields of military, environmental monitoring, imaging systems and the like.
Description
Technical Field
The invention belongs to the technical field of infrared metamaterials, and particularly relates to an infrared wave absorber based on a principle of a non-reflection filter.
Background
Metamaterials refer to a class of composite materials with artificially designed structures, and are referred to as metamaterials because of some extraordinary electromagnetic properties that natural materials do not possess. The electromagnetic metamaterial can regulate and control the phase, amplitude and polarization state of electromagnetic waves by means of a specific artificial structure, so that various extraordinary physical phenomena are realized, and special functions such as negative refractive index, electromagnetic stealth, perfect lens perfect absorption and the like can be realized. The metamaterial wave absorber is a device which can convert electromagnetic wave energy incident to the surface of the metamaterial wave absorber into other energy to be lost through a special mechanism and material.
Mid-infrared radiation is generally defined as electromagnetic waves with a wavelength in the range of 2.5-25 μm, and can be used for detecting the content of molecules and identifying the types of the molecules, and can also realize the imaging of the molecules, thereby having wide application in the fields of military affairs, environmental monitoring, medical treatment, basic research and the like. Therefore, the research on the metamaterial absorber in the mid-infrared band has important significance. The existing infrared wave absorber only has a single absorption frequency band generally, and the super-surface structure of the existing infrared wave absorber is complex in appearance, so that the existing infrared wave absorber is not beneficial to large-scale processing and production.
Disclosure of Invention
The invention aims to solve the defects of the prior art and provides an infrared wave absorber based on the principle of a non-reflection filter, which has a simple structure, is thin, has four absorption peaks in a wave band of 4.1-4.7 mu m, has high absorption rate and is sensitive to polarization.
Technical scheme
An infrared wave absorbing device based on a principle of a reflection-free filter comprises a plurality of wave absorbing units which are sequentially arranged, wherein each wave absorbing unit comprises a conductive reflecting layer, a dielectric layer and a micro-structure unit layer which are sequentially attached from bottom to top, the micro-structure unit layer is formed by four identical isosceles right triangle units which are formed by four times of rotation around the central point of the micro-structure unit layer, each isosceles right triangle unit consists of a large isosceles right triangle and a small isosceles right triangle, and in each isosceles right triangle unit, the bevel edges of the large isosceles right triangle and the small isosceles right triangle are close to and parallel; the material of the microstructure unit layer is selected from any one of metal, graphene or ITO; the material of the conductive reflecting layer is one of metal or ITO.
Further, in the isosceles right triangle unit, the side length of the large isosceles right triangle right angle is 1.000 μm, the side length of the small isosceles right triangle right angle is 0.707 μm, and the distance between the hypotenuses of the large isosceles right triangle and the small isosceles right triangle is 0.200 μm.
Further, the dielectric layer is a polyimide film with a dielectric constant of 2.88 and a loss tangent of 0.0032.
Further, the thickness of the dielectric layer is 3.00 μm.
Further, the thicknesses of the conductive reflecting layer and the microstructure unit layer are both 0.100 μm.
The invention has the beneficial effects that: the invention provides an infrared wave absorber based on a principle of a non-reflection filter, which comprises a plurality of wave absorbing units which are arranged in sequence, wherein each wave absorbing unit comprises a conductive reflecting layer, a dielectric layer and a microstructure unit layer which are sequentially attached from bottom to top, the microstructure unit layer has a unique structure, 4 absorption peaks can be obtained in the wave band of 4.1-4.7 μm, the bottom conductive reflection layer is made of metal or ITO with strong electromagnetic wave reflection effect, can ensure that no electromagnetic wave is transmitted, the electromagnetic wave entering the wave absorber is completely lost under the action of dielectric loss and ohmic loss, the infrared wave absorber has simple structure, thin thickness, easy integration and flexibility, the material has four absorption peaks and high absorption rate in the middle infrared band, and has wide application in the fields of military affairs, environmental monitoring, medical treatment, basic research and the like.
Drawings
FIG. 1 is a schematic three-dimensional structure diagram of a wave absorbing unit of an infrared absorber based on the principle of a non-reflection filter in example 1;
FIG. 2 is a front view of a wave absorbing unit of an infrared absorber based on the principle of a non-reflection filter in example 1;
FIG. 3 is an array diagram of an infrared absorber based on the principle of a reflectionless filter in embodiment 1;
FIG. 4 is a graph showing the absorption characteristics of the infrared absorber based on the principle of the reflectionless filter in example 1 in the 4.1-4.7 μm wavelength band;
in the figure, 1-microstructure unit layer; 2-a dielectric layer; 3-conductive reflective layer.
Detailed Description
The invention is described in detail below with reference to the figures and the detailed description.
Example 1
Referring to fig. 1-3, an infrared wave absorbing device based on the principle of a reflection-free filter comprises a plurality of wave absorbing units arranged in sequence, each wave absorbing unit comprises a conductive reflecting layer 3, a dielectric layer 2 and a microstructure unit layer 1 which are sequentially attached from bottom to top, the microstructure unit layer 1 is formed by four identical isosceles right triangle units which are formed by four rotations around the center point of the microstructure unit layer, each isosceles right triangle unit consists of a big isosceles right triangle and a small isosceles right triangle, in each isosceles right triangle unit, the hypotenuses of the large isosceles right triangle and the small isosceles right triangle are close to and parallel to each other, in this embodiment, the length of the right angle of the big isosceles right triangle is 1.000 mu m, the length of the right angle of the small isosceles right triangle is 0.707 mu m, and the distance between the hypotenuses of the big isosceles right triangle and the small isosceles right triangle in the same unit is 0.200 mu m.
In this embodiment, the dielectric layer is a polyimide film having a dielectric constant of 2.88 and a loss tangent of 0.0032, and has a thickness of 3.000 μm; the conductive reflecting layer and the microstructure unit layer have a conductivity of 5.8 × 107S/m, and the thickness is 0.100 μm.The infrared absorber based on the principle of the reflectionless filter has the corresponding lattice constant L of 5.000 μm, the rest parameter structures of X1 of 1 μm, X2 of 0.707 μm, W1 of 0.707 μm, W2 of 0.200 μm, the line widths W of the large isosceles right triangle and the small isosceles right triangle of 0.100 μm, and the lengths of the base angles of the large isosceles right triangle and the small isosceles right triangle close to the central point from the central point are both 2.236 μm.
A CST microwave working chamber is adopted to carry out simulation test on the infrared wave absorber based on the principle of the non-reflection filter in the embodiment 1, FIG. 4 is an absorption characteristic curve diagram of the infrared wave absorber based on the principle of the non-reflection filter in the embodiment 1 in a wave band of 4.1-4.7 μm, and as can be seen from FIG. 4, the corresponding absorption rates of the infrared wave absorber based on the principle of the non-reflection filter in the invention at the wavelengths of 4.17 μm, 4.29 μm, 4.41 μm and 4.61 μm are respectively 94.00 percent, 97.09 percent, 92.75 percent and 98.42 percent
The preparation method of the infrared wave absorber based on the principle of the non-reflection filter comprises the following steps: plating conductive reflecting layers with the thickness of 0.100 mu m on two surfaces of the dielectric layer in a film plating mode, etching the structure of the microstructure unit layer on one surface of the microstructure unit layer in a chemical etching mode to obtain a wave absorbing unit, and sequentially arranging a plurality of wave absorbing units together to obtain the infrared wave absorber.
Claims (5)
1. An infrared wave absorbing device based on a reflection-free filter principle comprises a plurality of wave absorbing units which are sequentially arranged, wherein each wave absorbing unit comprises a conductive reflecting layer, a dielectric layer and a micro-structure unit layer which are sequentially attached from bottom to top; the material of the microstructure unit layer is selected from any one of metal, graphene or ITO; the material of the conductive reflecting layer is one of metal or ITO.
2. An infrared absorber based on the principle of a reflectionless filter as set forth in claim 1, wherein in said isosceles right triangle unit, the length of the right angle side of the large isosceles right triangle is 1.000 μm, the length of the right angle side of the small isosceles right triangle is 0.707 μm, and the distance between the hypotenuses of the large isosceles right triangle and the small isosceles right triangle is 0.200 μm.
3. The infrared absorber based on the principle of the reflectionless filter of claim 1, wherein the dielectric layer is a polyimide film having a dielectric constant of 2.88 and a loss tangent of 0.0032.
4. An infrared absorber based on the principle of a reflectionless filter as set forth in claim 1, wherein the dielectric layer has a thickness of 3.00 μm.
5. The infrared absorber based on the principle of the reflectionless filter of claim 1, 2, 3, or 4, wherein the thickness of the conductive reflective layer and the microstructure unit layers are each 0.100 μm.
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| JP2006301585A (en) * | 2005-03-22 | 2006-11-02 | Seiko Epson Corp | Optical product and method of manufacturing optical product |
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| CN104503008B (en) * | 2014-12-30 | 2017-01-18 | 太原理工大学 | Compound structure with function of improving wide-spectrum light absorption efficiency |
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| CN107057148A (en) * | 2017-01-24 | 2017-08-18 | 北京理工大学珠海学院 | A kind of preparation method of absorbing material |
| CN207338648U (en) * | 2017-10-11 | 2018-05-08 | 南京邮电大学 | Programmable/controllable multifrequency wave absorbing device based on solid state plasma |
| CN107978870B (en) * | 2017-11-13 | 2020-02-18 | 南京邮电大学 | Narrow-band wave absorber based on plasma metamaterial regulation and control |
| CN108183337B (en) * | 2018-01-09 | 2020-04-07 | 南京邮电大学 | Wide-angle insensitive plasma metamaterial broadband wave absorber |
| CN108183341B (en) * | 2018-03-09 | 2020-08-14 | 南京邮电大学 | Tunable ultra-wideband wave absorber with multilayer support structure |
| CN109326854B (en) * | 2018-09-10 | 2020-07-17 | 桂林电子科技大学 | Graphene-based intermediate infrared tunable band-stop filter |
| CN110808474A (en) * | 2019-11-11 | 2020-02-18 | 上海理工大学 | Metamaterial capable of realizing polarization-independent electromagnetic induction-like transparent effect |
| CN110896171A (en) * | 2019-11-19 | 2020-03-20 | 南京航空航天大学 | Ultra-wideband polarization conversion super-surface structure |
| CN110850517A (en) * | 2019-11-29 | 2020-02-28 | 安阳师范学院 | Dual-band terahertz wave absorber with graphene super-surface |
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