CN112816847A - High-power semiconductor device electrifying heating performance testing device - Google Patents
High-power semiconductor device electrifying heating performance testing device Download PDFInfo
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Abstract
The invention relates to a high-power semiconductor device electrifying heating performance testing device, which comprises: the semiconductor device unit can be in contact with the semiconductor device unit, is a heat dissipation unit in which the semiconductor device dissipates heat, is connected with a temperature measurement unit which is used for detecting the temperature of the heat dissipation unit, is connected with the heat dissipation unit and the temperature measurement unit and is used for driving the heat dissipation unit and a driving unit which is in contact with the semiconductor device unit, and is connected with the heat dissipation unit and is used for intelligently controlling the heat dissipation unit to dissipate heat of the semiconductor device in the semiconductor device unit. According to the scheme of the invention, good contact between the thermocouple and the surface of the radiator is effectively ensured, and the temperature measurement accuracy and the consistency of measurement results are greatly improved. The intelligent temperature control of the water inlet temperature is realized, the problem of large fluctuation of the water inlet temperature is solved, the frequency conversion water pump does not need to be turned off when the IGBT device is replaced, and the test efficiency is greatly improved.
Description
Technical Field
The invention relates to the technical field of electronic component thermal control, in particular to a device for testing the power-on heating performance of a high-power semiconductor device.
Background
The flexible direct current transmission has wide technical requirements in China, and is an important means for realizing large-scale renewable energy grid connection and improving the control level of a complex power grid. A flexible direct-current transmission converter valve is core equipment for realizing alternating-current and direct-current electric energy conversion. As the transmission capacity of the flexible direct current transmission project is larger and larger, the requirement on the operation reliability of the converter valve is extremely high.
The converter valve has high voltage grade and large conversion electric energy, and when in operation, the high-power semiconductor device IGBT generates huge heat and transmits the heat to a cooling water channel through a matched radiator, so that the high-power semiconductor device IGBT is a core component of the flexible direct-current transmission converter valve, and the operational characteristics of the high-power semiconductor device IGBT are good and bad and whether the high-power semiconductor device IGBT can reliably operate or not are closely related to the operation of a power grid.
However, the high-power semiconductor device IGBT in China starts late, the design of the domestic IGBT is not verified by long-term operation tests, and the performance testing device of the high-power semiconductor device generally adopts a mode of arranging a thermocouple in a groove and cooling by a simple water system at present, so that the problems of inaccurate testing temperature and large water inlet temperature fluctuation exist, the performance testing of the high-power semiconductor device IGBT is inaccurate, and the performance of the IGBT cannot be tested reliably and fully. Therefore, how to accurately, quickly, stably and reliably test the performance of the IGBT becomes a constraint factor for restricting the large-scale production of domestic IGBT devices and the large-scale renewable energy grid connection.
Disclosure of Invention
The present invention is directed to solve at least one of the problems in the background art, and provides an apparatus for testing the heating performance of a high power semiconductor device.
In order to achieve the above object, the present invention provides a device for testing the heating performance of a high power semiconductor device, comprising: the semiconductor device unit can be in contact with the semiconductor device unit, is a heat dissipation unit in which the semiconductor device dissipates heat, is connected with a temperature measurement unit which is used for detecting the temperature of the heat dissipation unit, is connected with the heat dissipation unit and the temperature measurement unit and is used for driving the heat dissipation unit and a driving unit which is in contact with the semiconductor device unit, and is connected with the heat dissipation unit and is used for intelligently controlling the heat dissipation unit to dissipate heat of the semiconductor device in the semiconductor device unit.
According to one aspect of the invention, the semiconductor device unit comprises a semiconductor device composed of an insulated gate bipolar transistor chip and a diode chip, and a power supply control module for providing power supply and operation control commands for the semiconductor device.
According to an aspect of the present invention, the heat dissipating unit includes first and second heat sinks respectively located at opposite sides of the semiconductor device unit.
According to an aspect of the present invention, the temperature measuring unit includes a first temperature measuring member connected to a side of the first heat sink away from the semiconductor device unit, and a second temperature measuring member connected to a side of the second heat sink away from the semiconductor device unit.
According to one aspect of the invention, the driving unit comprises a first hydraulic driver connected with the first temperature measuring part and the first radiator for driving the first temperature measuring part and the first radiator to reciprocate, and a second hydraulic driver connected with the second temperature measuring part and the second radiator for driving the second temperature measuring part and the second radiator to reciprocate.
According to an aspect of the present invention, the driving unit further includes a support structure including a first fixed plate for supporting the first hydraulic actuator, a second fixed plate for supporting the second hydraulic actuator, and a support column supporting the first fixed plate and the second fixed plate from both ends.
According to one aspect of the invention, the intelligent temperature control water cooling unit comprises a radiator water outlet pipe and a radiator water inlet pipe which are connected with the first radiator and the second radiator, an intelligent temperature control water tank which is connected with the radiator water outlet pipe and the radiator water inlet pipe, a variable frequency water pump arranged on the radiator water outlet pipe, a circulating water pipe connected with the radiator water outlet pipe and the radiator water inlet pipe, and a first electromagnetic valve and a second electromagnetic valve which are respectively arranged at the connection position of the radiator water outlet pipe and the internal circulating water pipe and the connection position of the radiator water inlet pipe and the internal circulating water pipe.
According to one aspect of the invention, the first heat sink and the second heat sink are made of aluminum or copper, and the thermal conductivity of the first heat sink and the second heat sink is not less than 45W/m.K in principle;
the first radiator and the second radiator have the thermal resistance variation range of 2k/kW-15k/kW within the flow range of 5-20L;
the surface roughness of the first radiator and the second radiator is less than or equal to 0.5 mu m, the flatness is less than or equal to 0.02mm, and the parallelism is less than or equal to 0.03 mm;
and heat-conducting silicone grease is coated between the contact surfaces of the first radiator and the semiconductor device and between the contact surfaces of the second radiator and the semiconductor device, so that the contact thermal resistance of the contact surfaces is less than 0.1 k/kW.
According to one aspect of the invention, the surface roughness of the first temperature measurement piece and the second temperature measurement piece is less than or equal to 0.8 mu m, the planeness is less than or equal to 0.025mm, and the parallelism is less than or equal to 0.05 mm.
According to one aspect of the invention, a plurality of grooves are arranged on each of the first temperature measuring part and the second temperature measuring part, temperature measuring thermocouples are arranged in the grooves, and the diameter of each groove is less than 2.5 mm;
the groove is also internally provided with a spring for supporting the temperature thermocouple, the material of the spring meets the requirements that the deformation amount is less than 0.001mm within the temperature range of-20 ℃ to 150 ℃, and the expansion amount of the spring during working is not less than 2 mm.
According to one scheme of the invention, the driving unit comprises a first hydraulic driver which is connected with the first temperature measuring part and the first radiator and is used for driving the first temperature measuring part and the first radiator to reciprocate, and a second hydraulic driver which is connected with the second temperature measuring part and the second radiator and is used for driving the second temperature measuring part and the second radiator to reciprocate. According to the arrangement, the first radiator and the first temperature measuring part can be driven to move up and down from the upper part through the first hydraulic driver, the second radiator and the second temperature measuring part are driven to move up and down through the second hydraulic driver, and therefore the IGBT device located between the two radiators can be clamped between the two radiators through the driving of the hydraulic driver to carry out power-on heating performance testing. Therefore, the operation in the test process is very convenient, and the heating performance test of the semiconductor device can be realized by using a simple structure.
According to one scheme of the invention, the intelligent temperature control water cooling unit comprises a radiator water outlet pipe and a radiator water inlet pipe which are connected with a first radiator and a second radiator, an intelligent temperature control water tank connected with the radiator water outlet pipe and the radiator water inlet pipe, a variable frequency water pump arranged on the radiator water outlet pipe, a circulating water pipe connected with the radiator water outlet pipe and the radiator water inlet pipe, and a first electromagnetic valve and a second electromagnetic valve which are respectively arranged at the connection part of the radiator water outlet pipe and the internal circulating water pipe and the connection part of the radiator water inlet pipe and the internal circulating water pipe. The variable frequency water pump can realize flow variable frequency adjustment under different input voltage frequencies, and the intelligent temperature control water tank is internally provided with a heating and cooling module, so that the temperature of cooling water can be adjusted from-20 ℃ to 90 ℃. The intelligent temperature control water cooling unit has good pipeline sealing performance, and the water pressure resistance is not lower than 1.6 MPa. The intelligent temperature control water cooling unit performs test system flow control through combined action of the variable frequency water pump, the first electromagnetic valve and the second electromagnetic valve, the flow control range is 5-20L/min, and the flow regulation precision is 0.01L. The intelligent temperature control water cooling unit realizes a flowing double-circulation loop through the action of the first electromagnetic valve and the second electromagnetic valve. For example, when an IGBT device is subjected to an energization heating performance test, the action positions of the first electromagnetic valve and the second electromagnetic valve are parallel to the flowing direction of water, so that heat emitted by the IGBT device is taken away by water flowing in the first radiator and the second radiator. When not carrying out IGBT device performance test, first solenoid valve and second solenoid valve action position all are perpendicular with the flow direction of water, guarantee that the cooling water realizes the inner loop through inner circulation water pipe in intelligence control by temperature change water-cooling unit is inside.
According to the scheme provided by the invention, the arrangement method of the elastic jacking integrated temperature thermocouple is provided, so that the good contact between the thermocouple and the surface of the radiator is effectively ensured, and the temperature measurement accuracy and the consistency of the measurement result are greatly improved. The design of dual-cycle intelligent temperature control water cooling system is creatively provided, the intelligent temperature control adjustment of the water inlet temperature is realized, the problem of large fluctuation of the water inlet temperature is solved, the variable frequency water pump does not need to be turned off when the IGBT device is replaced, and the test efficiency is greatly improved. Meanwhile, the device is high in integration level and convenient and fast to operate. Through the intelligent temperature control water cooling unit, the hydraulic drive integrated optimization design and the application of the intelligent screen, the test platform is compact and intelligent in operation. The device can realize the simple and efficient test of the power-on heating performance of the high-power semiconductor device, has simple operation, accurate, clear and intuitive test result and can effectively save the test cost.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which correspond to the figures in which like reference numerals refer to similar elements and which are not to scale unless otherwise specified.
Fig. 1 is a schematic diagram showing a structure of an energization heating performance test apparatus for a high power semiconductor device according to an embodiment of the present invention;
fig. 2 schematically shows a block diagram of a semiconductor device cell according to an embodiment of the present invention;
FIG. 3 schematically shows a block diagram of an intelligent temperature controlled water cooling unit according to an embodiment of the present invention;
FIG. 4 is a schematic view illustrating a structure in which thermocouples are disposed on first and second temperature measuring members according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the scope of the present invention.
Fig. 1 is a schematic diagram showing a configuration of an apparatus for testing heat generation performance of a power semiconductor device according to an embodiment of the present invention. As shown in fig. 1, the apparatus for testing the power-on heating performance of a high power semiconductor device according to the present invention comprises: the semiconductor device unit 1 can be in contact with the semiconductor device unit 1, and comprises a heat dissipation unit 2 for dissipating heat of the semiconductor device, a temperature measurement unit 3 connected with the heat dissipation unit 2 and used for detecting the temperature of the heat dissipation unit 2, a driving unit 4 connected with the heat dissipation unit 2 and the temperature measurement unit 3 and used for driving the heat dissipation unit 2 to be in contact with the semiconductor device unit 1, and an intelligent temperature control water cooling unit 5 connected with the heat dissipation unit 2 and used for intelligently controlling the heat dissipation unit 2 to dissipate heat of the semiconductor device in the semiconductor device unit 1.
Fig. 2 schematically shows a block diagram of a semiconductor device cell according to an embodiment of the present invention. As shown in fig. 2, in the present embodiment, the semiconductor device unit 1 includes a semiconductor device 101 composed of an insulated gate bipolar transistor chip 1011 and a diode chip 1012, and a power supply control module 102 that supplies power and operation control commands to the semiconductor device 101. In this embodiment, the semiconductor device 101 is, for example, an IGBT device, the IGBT device is composed of an insulated gate bipolar transistor chip 1011 and a diode chip 1012, when it is verified that the IGBT device is driven by an external power supply to operate, a power supply and a control command required for operation are from the power supply control module 102, and when it is required to verify a performance test of the IGBT device at an external temperature, the power supply control module 102 does not operate.
Further, as shown in fig. 1, in the present embodiment, the heat radiating unit 2 includes a first heat sink 201 and a second heat sink 202 respectively located on opposite sides (i.e., upper and lower sides in fig. 1) of the semiconductor device unit 1. The temperature measuring unit 3 includes a first temperature measuring member 301 connected to a side (i.e., an upper surface in fig. 1) of the first heat sink 201 away from the semiconductor device unit 1, and a second temperature measuring member 302 connected to a side (i.e., a lower surface in fig. 1) of the second heat sink 202 away from the semiconductor device unit 1.
In the present embodiment, the driving unit 4 includes a first hydraulic driver 401 connected to the first temperature measuring device 301 and the first radiator 201 for driving the first temperature measuring device 301 and the first radiator 201 to reciprocate, and a second hydraulic driver 402 connected to the second temperature measuring device 302 and the second radiator 202 for driving the second temperature measuring device 302 and the second radiator 202 to reciprocate. By the arrangement, the first radiator 201 and the first temperature measuring part 301 can be driven to move up and down by the first hydraulic driver 401 from the upper side, and the second radiator 202 and the second temperature measuring part 302 can be driven to move up and down by the second hydraulic driver 402, so that the IGBT device between the two radiators can be clamped between the two radiators by the driving of the hydraulic drivers to carry out the performance test of electrifying and heating. Therefore, the operation in the test process is very convenient, and the heating performance test of the semiconductor device can be realized by using a simple structure.
Furthermore, as shown in fig. 1, the drive unit 4 further includes a support structure 403, the support structure 403 including a first fixed plate 4031 for supporting the first hydraulic actuator 401, a second fixed plate 4032 for supporting the second hydraulic actuator 402, and a support column 4033 for supporting the first fixed plate 4031 and the second fixed plate 4032 from both ends. So set up for overall structure rigidity intensity is high, and the drive process is reliable and stable, makes the capability test process safe more high-efficient.
Further, fig. 3 schematically shows a structure diagram of the intelligent temperature-controlled water-cooling unit according to an embodiment of the present invention. As shown in fig. 3, in the present embodiment, the intelligent temperature-controlled water cooling unit 5 includes a radiator outlet pipe 501 and a radiator inlet pipe 502 connected to the first radiator 201 and the second radiator 202, an intelligent temperature-controlled water tank 503 connected to the radiator outlet pipe 501 and the radiator inlet pipe 502, a variable-frequency water pump 504 disposed on the radiator outlet pipe 502, an internal circulating water pipe 505 connected to the radiator outlet pipe 501 and the radiator inlet pipe 502, and a first electromagnetic valve 506 and a second electromagnetic valve 507 disposed at a connection between the radiator outlet pipe 501 and the internal circulating water pipe 505 and a connection between the radiator inlet pipe 502 and the internal circulating water pipe 505, respectively. In this embodiment, the variable frequency water pump 504 can realize variable frequency adjustment of flow rate under different input voltage frequencies, and the intelligent temperature control water tank 503 is provided with a heating and cooling module therein, so that the temperature of cooling water can be adjusted from-20 ℃ to 90 ℃. The intelligent temperature control water cooling unit 5 has good pipeline sealing performance, and the water pressure resistance is not lower than 1.6 MPa. The intelligent temperature control water cooling unit 5 performs flow control of the test system through combined action of the variable frequency water pump 504, the first electromagnetic valve 506 and the second electromagnetic valve 507, the flow control range is 5-20L/min, and the flow regulation precision is 0.01L. The intelligent temperature control water cooling unit 5 realizes a flow double circulation loop through the actions of the first electromagnetic valve 506 and the second electromagnetic valve 507. For example, when an IGBT device is subjected to an energization heating performance test, the operating positions of the first solenoid valve 506 and the second solenoid valve 507 are both parallel to the flow direction of water, so as to ensure that heat generated by the IGBT device is taken away by water flowing through the first radiator 201 and the second radiator 202. When the performance test of the IGBT device is not carried out, the action positions of the first electromagnetic valve 506 and the second electromagnetic valve 507 are perpendicular to the flowing direction of water, and the internal circulation of cooling water in the intelligent temperature control water cooling unit 5 through the internal circulation water pipe 505 is guaranteed.
In addition to the above arrangement of the present invention, according to an embodiment of the present invention, the structural forms of the internal flow passages of the first heat sink 201 and the second heat sink 202 are arranged to be the same or different according to the test requirements, and the structural forms are not limited to the labyrinth type, the wave shape, and the like. The first heat sink 201 and the second heat sink 202 are made of aluminum or copper, and the thermal conductivity thereof is not less than 45W/m.k in principle. The thermal resistance of the first radiator 201 and the second radiator 202 ranges from 2k/kW to 15k/kW within the flow range of 5L to 20L. The surface roughness of the first radiator 201 and the second radiator 202 is less than or equal to 0.5 mu m, the planeness is less than or equal to 0.02mm, and the parallelism is less than or equal to 0.03 mm. And heat-conducting silicone grease is coated between the contact surfaces of the first radiator 201 and the second radiator 202 and the IGBT device to ensure that the contact thermal resistance of the contact surfaces is less than 0.1 k/kW.
The first temperature measurement piece 301 and the second temperature measurement piece 302 are temperature measurement panels, and the structural form, the material and the component parts of the first temperature measurement piece 301 and the second temperature measurement piece 302 are the same. The surface roughness of the first temperature measurement part 301 and the second temperature measurement part 302 is less than or equal to 0.8 mu m, the planeness is less than or equal to 0.025mm, and the parallelism is less than or equal to 0.05 mm. The first temperature measuring part 301 and the second temperature measuring part 302 are provided with temperature measuring thermocouples by adopting a drilling method, namely, the lower surface of the first temperature measuring part 301 and the upper surface of the second temperature measuring part 302 are provided with a plurality of cylindrical grooves 3021, the structure is shown in fig. 4, the aperture size of the grooves 3021 is smaller than 2.5mm, so as to ensure that the temperature distribution on the surfaces of the second temperature measuring part 302 and the first temperature measuring part 301 is minimally influenced. The temperature thermocouple is tightly attached to the surfaces of the first radiator 201 and the second radiator 202 by a spring pre-tightening mode, namely, a spring for supporting the temperature thermocouple is further arranged in the groove 3021, so that when the upper radiator and the lower radiator clamp the IGBT device, the temperature thermocouple is tightly contacted with the first radiator 201 and the second radiator 202 under the action force of the spring due to extrusion force, and effective temperature measurement is realized. In the embodiment, the material of the spring meets the requirements that the deformation amount is less than 0.001mm within the temperature range of-20 ℃ to 150 ℃, and the expansion amount of the spring during working is not less than 2 mm.
In the present embodiment, the second hydraulic actuator 402 and the first hydraulic actuator 401 are independently electrically controlled, and the second hydraulic actuator 402 and the first hydraulic actuator 401 are electrically controlled differently according to the test requirements, and the accuracy of the deviation control of the hydraulic pressures of the second hydraulic actuator 402 and the first hydraulic actuator 401 is less than 0.01T and does not change by more than 0.1% within 24 h. When the IGBT device under test is placed between the first radiator 201 and the second radiator 202, the second hydraulic driver 402 and the first hydraulic driver 401 are activated to bring the IGBT device into close contact with the first radiator 201 and the second radiator 202.
In the present embodiment, second fixed plate 4032 and first fixed plate 4031 are cast and made of steel, second fixed plate 4032 and first fixed plate 4031 have a thickness of not less than 200mm and are configured in a square shape, and second fixed plate 4032 and first fixed plate 4031 are operated together with second hydraulic actuator 402 and first hydraulic actuator 401 by support column 4033.
Besides, as shown in fig. 1, according to an embodiment of the present invention, the IGBT further includes an intelligent display screen 6 electrically connected to the semiconductor device unit 1, the size of the intelligent display screen 6 is not less than 12 inches, the intelligent display screen 6 has internal data processing, data storage and test data playback functions, and the intelligent display screen 6 can display temperature change curves and temperature data of the IGBT device under different conditions of testing. The intelligent display screen 6 has a USB flash disk interface function, and test record data can be transmitted out through the USB flash disk.
According to the scheme of the invention, the arrangement method of the elastic jacking integrated temperature thermocouple is provided, so that the good contact between the thermocouple and the surface of the radiator is effectively ensured, and the temperature measurement accuracy and the consistency of measurement results are greatly improved. The design of dual-cycle intelligent temperature control water cooling system is creatively provided, the intelligent temperature control adjustment of the water inlet temperature is realized, the problem of large fluctuation of the water inlet temperature is solved, the variable frequency water pump does not need to be turned off when the IGBT device is replaced, and the test efficiency is greatly improved. Meanwhile, the device is high in integration level and convenient and fast to operate. Through the intelligent temperature control water cooling unit, the hydraulic drive integrated optimization design and the application of the intelligent screen, the test platform is compact and intelligent in operation. The device can realize the simple and efficient test of the power-on heating performance of the high-power semiconductor device, has simple operation, accurate, clear and intuitive test result and can effectively save the test cost.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (10)
1. A high-power semiconductor device electrifying heating performance testing device is characterized by comprising: semiconductor device unit (1), can with semiconductor device unit (1) contact is wherein radiating heat dissipation unit (2) of semiconductor device, with heat dissipation unit (2) are connected and are used for detecting temperature measurement unit (3) of heat dissipation unit (2) temperature, with heat dissipation unit (2) with temperature measurement unit (3) are connected and are used for the drive heat dissipation unit (2) with drive unit (4) of semiconductor device unit (1) contact, with heat dissipation unit (2) are connected and are used for intelligent control heat dissipation unit (2) are right semiconductor device carries out radiating intelligent control by temperature change water cooling unit (5) in semiconductor device unit (1).
2. The power-on heating performance testing device of the high-power semiconductor device according to claim 1, wherein the semiconductor device unit (1) comprises a semiconductor device (101) consisting of an insulated gate bipolar transistor chip (1011) and a diode chip (1012), and a power control module (102) for providing power and operation control commands for the semiconductor device (101).
3. The device for testing the energization heating performance of a high-power semiconductor device according to claim 2, wherein the heat dissipation unit (2) comprises a first heat sink (201) and a second heat sink (202) respectively located at two opposite sides of the semiconductor device unit (1).
4. The device for testing the power-on heating performance of the high-power semiconductor device according to claim 3, wherein the temperature measuring unit (3) comprises a first temperature measuring part (301) connected with one side of the first heat sink (201) far away from the semiconductor device unit (1) and a second temperature measuring part (302) connected with one side of the second heat sink (202) far away from the semiconductor device unit (1).
5. The device for testing the power-on heating performance of the high-power semiconductor device according to claim 4, wherein the driving unit (4) comprises a first hydraulic driver (401) connected with the first temperature measuring part (301) and the first heat sink (201) for driving the first temperature measuring part (301) and the first heat sink (201) to reciprocate, and a second hydraulic driver (402) connected with the second temperature measuring part (302) and the second heat sink (202) for driving the second temperature measuring part (302) and the second heat sink (202) to reciprocate.
6. The device for testing the energization heating performance of a high-power semiconductor device according to claim 5, wherein the driving unit (4) further comprises a supporting structure (403), and the supporting structure (403) comprises a first fixing plate (4031) for supporting the first hydraulic actuator (401), a second fixing plate (4032) for supporting the second hydraulic actuator (402), and a supporting column (4033) for supporting the first fixing plate (4031) and the second fixing plate (4032) from both ends.
7. The power-on heating performance testing apparatus for high power semiconductor device according to claim 6, it is characterized in that the intelligent temperature control water cooling unit (5) comprises a radiator water outlet pipe (501) and a radiator water inlet pipe (502) which are connected with the first radiator (201) and the second radiator (202), an intelligent temperature control water tank (503) connected with the radiator water outlet pipe (501) and the radiator water inlet pipe (502), a variable frequency water pump (504) arranged on the radiator water outlet pipe (501), and an internal circulation water pipe (505) connected with the radiator water outlet pipe (501) and the radiator water inlet pipe (502), and a first electromagnetic valve (506) and a second electromagnetic valve (507) which are respectively arranged at the joint of the radiator water outlet pipe (501) and the internal circulating water pipe (505) and the joint of the radiator water inlet pipe (502) and the internal circulating water pipe (505).
8. The device for testing the energization heating performance of a high-power semiconductor device according to claim 3, wherein the first heat sink (201) and the second heat sink (202) are made of aluminum or copper, and have a thermal conductivity not less than 45W/m.K;
the first radiator (201) and the second radiator (202) have the thermal resistance variation range of 2k/kW-15k/kW within the flow range of 5-20L;
the surface roughness of the first radiator (201) and the second radiator (202) is less than or equal to 0.5 mu m, the planeness is less than or equal to 0.02mm, and the parallelism is less than or equal to 0.03 mm;
and heat-conducting silicone grease is coated between the contact surfaces of the first radiator (201) and the second radiator (202) and the semiconductor device (101), so that the contact thermal resistance of the contact surfaces is less than 0.1 k/kW.
9. The device for testing the energization heating performance of the high-power semiconductor device according to claim 4, wherein the surface roughness of the first temperature measuring part (301) and the second temperature measuring part (302) is less than or equal to 0.8 μm, the flatness is less than or equal to 0.025mm, and the parallelism is less than or equal to 0.05 mm.
10. The device for testing the energization heating performance of the high-power semiconductor device according to claim 9, wherein a plurality of grooves (3021) are formed on each of the first temperature measuring part (301) and the second temperature measuring part (302), a temperature measuring thermocouple is arranged in each groove (3021), and the diameter of each groove (3021) is less than 2.5 mm;
the groove (3021) is also internally provided with a spring for supporting the temperature thermocouple, the spring is made of a material which can meet the requirements that the deformation amount is less than 0.001mm within the temperature range of-20 ℃ to 150 ℃, and the expansion amount of the spring is not less than 2mm when the spring works.
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| CN211616524U (en) * | 2019-12-02 | 2020-10-02 | 湖北民族大学 | Fast mode temperature control device and system of moulding plastics in coordination |
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| CN113391182A (en) * | 2021-06-09 | 2021-09-14 | 中车青岛四方车辆研究所有限公司 | IGBT thermal simulation device and semi-physical IGBT thermal simulation system |
| CN113391182B (en) * | 2021-06-09 | 2022-12-06 | 中车青岛四方车辆研究所有限公司 | IGBT thermal simulation device and semi-physical IGBT thermal simulation system |
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