CN112812559A - Insulating PI film and preparation method thereof - Google Patents
Insulating PI film and preparation method thereof Download PDFInfo
- Publication number
- CN112812559A CN112812559A CN202110118506.2A CN202110118506A CN112812559A CN 112812559 A CN112812559 A CN 112812559A CN 202110118506 A CN202110118506 A CN 202110118506A CN 112812559 A CN112812559 A CN 112812559A
- Authority
- CN
- China
- Prior art keywords
- film
- parts
- insulating
- nano
- boron carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 29
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 25
- 239000002105 nanoparticle Substances 0.000 claims abstract description 17
- 239000011491 glass wool Substances 0.000 claims abstract description 11
- 229920002285 poly(styrene-co-acrylonitrile) Polymers 0.000 claims abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 10
- 229920001515 polyalkylene glycol Polymers 0.000 claims abstract description 9
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 claims abstract description 7
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 7
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052580 B4C Inorganic materials 0.000 claims description 27
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 27
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 14
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 14
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 6
- 238000013329 compounding Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- 229920002164 Polyalkylene glycol copolymer Polymers 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003137 locomotive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
- C08G73/1071—Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2425/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Derivatives of such polymers
- C08J2425/02—Homopolymers or copolymers of hydrocarbons
- C08J2425/04—Homopolymers or copolymers of styrene
- C08J2425/08—Copolymers of styrene
- C08J2425/12—Copolymers of styrene with unsaturated nitriles
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2471/00—Characterised by the use of polyethers obtained by reactions forming an ether link in the main chain; Derivatives of such polymers
- C08J2471/02—Polyalkylene oxides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/02—Fibres or whiskers
- C08K7/04—Fibres or whiskers inorganic
- C08K7/14—Glass
Abstract
The invention discloses an insulating PI film which is characterized by comprising the following components in parts by weight: 30-70 parts of pyromellitic dianhydride; 20-60 parts of biphenyl tetracarboxylic dianhydride; 20-50 parts of PPD; 20-60 parts of ODA; 5-20 parts of polyalkylene glycol; 5-20 parts of a styrene-acrylonitrile copolymer; 3-10 parts of aluminum oxide; 5-15 parts of superfine glass wool; 3-15 parts of mixed nano particles; 40-90 parts of a solvent. In the invention, the polyalkylene glycol and the styrene-acrylonitrile copolymer are compounded for use, so that the insulating property and the strength of the PI film are improved; the addition of the alumina and the superfine glass wool further improves the insulating property and the heat resistance; when the nano silicon dioxide and the nano silicon nitride are compounded for use, the reduction of the insulating property can not be caused on the premise of obviously improving the high temperature resistance, the strength and the scratch resistance of the PI film, so that the comprehensive performance of the PI film can be improved.
Description
Technical Field
The invention relates to the field of PI films, in particular to an insulating PI film and a preparation method thereof.
Background
As a special engineering material, PI films (polyimide films) have been widely used in the fields of aviation, aerospace, electrical/electronic, microelectronics, nano, liquid crystal, separation films, lasers, locomotives, automobiles, precision machinery, and automatic office machines. The PI film has excellent properties, and is widely applied to more and more electronic products, and with the development of products to which the PI film is applied, higher requirements are put on the properties of the PI film, such as insulation property, heat resistance, strength and the like, for example, the PI insulating film needs to have good insulation property, heat resistance and proper strength at the same time to meet the application requirements. Therefore, how to improve the comprehensive performance of the PI film is a problem that needs to be solved urgently.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide an insulating PI film and a method for manufacturing the same, aiming at the above-mentioned deficiencies in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that: an insulating PI film comprises the following components in parts by weight:
preferably, the solvent is any one or more of N, N-dimethylformamide, dimethylacetamide and triethylamine.
Preferably, the mixed nanoparticles are a mixture of nano-silica and nano-boron carbide.
Preferably, the mass ratio of the nano silicon dioxide to the nano boron carbide in the mixed nanoparticles is 2: 1.
Preferably, the particle size of the nano silicon dioxide and the particle size of the nano boron carbide are both 20-60 nm.
Preferably, the insulating PI film comprises the following components in parts by weight:
preferably, the insulating PI film comprises the following components in parts by weight:
preferably, the insulating PI film comprises the following components in parts by weight:
preferably, the method for preparing the insulating PI film includes the steps of:
1) mixing nano silicon dioxide and nano boron carbide and preparing a dispersion liquid;
2) adding pyromellitic dianhydride, biphenyl tetracarboxylic dianhydride, PPD, ODA, polyalkylene glycol, styrene-acrylonitrile copolymer, alumina, superfine glass wool and the dispersion liquid obtained in the step 1) into a solvent, and uniformly mixing;
3) coating the mixture obtained in the step 2) on a release layer, curing to form a semi-finished PI film, and then pressing another release layer on the surface of the semi-finished PI film to obtain the insulated PI film.
The invention has the beneficial effects that:
the insulating PI film has excellent insulating property, high temperature resistance and strength; the polyalkylene glycol and the styrene-acrylonitrile copolymer are compounded for use, so that the insulating property and the strength of the PI film are improved; the addition of the alumina and the superfine glass wool further improves the insulating property and the heat resistance; when the nano silicon dioxide and the nano silicon nitride are compounded for use, the reduction of the insulating property can not be caused on the premise of obviously improving the high temperature resistance, the strength and the scratch resistance of the PI film, so that the comprehensive performance of the PI film can be improved; the insulating PI film has excellent comprehensive performance and the preparation method is simple.
Detailed Description
The present invention is further described in detail below with reference to examples so that those skilled in the art can practice the invention with reference to the description.
It will be understood that terms such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
The invention provides an insulating PI film which comprises the following components in parts by weight:
wherein the solvent is any one or more of N, N-dimethylformamide, dimethylacetamide and triethylamine.
Wherein the mixed nano particles are a mixture of nano silicon dioxide and nano boron carbide. In a further preferred embodiment, the mass ratio of the nano-silicon dioxide to the nano-boron carbide in the mixed nanoparticles is 2: 1. The particle sizes of the nano silicon dioxide and the boron carbide are both 20-60 nm.
The nano silicon dioxide has a rigid inner core structure, and can improve the strength and the insulating property of the PI film. The introduction of the nano boron carbide can obviously improve the high temperature resistance of the PI film and further improve the strength, but the introduction of the single nano boron carbide can easily reduce the insulating property of the PI film. When the nano silicon dioxide and the nano silicon nitride are compounded for use, the reduction of the insulating property can not be caused on the premise of obviously improving the high temperature resistance, the strength and the scratch resistance of the PI film, so that the comprehensive performance of the PI film can be improved.
Pyromellitic dianhydride is used as rigid dianhydride, so that the hardness can be improved; the strength can be improved by compounding the biphenyl tetracarboxylic dianhydride and the pyromellitic dianhydride. PPD (p-phenylenediamine) is rigid diamine and can enhance rigidity, ODA (diaminodiphenyl ether) is flexible diamine and can enhance flexibility, and p-phenylenediamine and diaminodiphenyl ether are compounded for use to balance rigidity and flexibility, so that the obtained PI film has proper rigidity and flexibility.
The addition of the polyalkylene glycol can effectively improve the insulating property of the PI film, the styrene-acrylonitrile copolymer can improve the strength and the heat resistance of the PI film, the compounding of the polyalkylene glycol and the styrene-acrylonitrile copolymer can improve the comprehensive performance of the PI film,
the addition of the alumina can improve corona resistance and insulation performance, the superfine glass wool has the outstanding advantages of light weight, low heat conductivity coefficient, good thermal insulation performance, corrosion resistance and heat resistance, and the insulation performance and mechanical performance of the PI film can be further improved by compounding the superfine glass wool with the alumina.
In a preferred embodiment, the method for preparing the insulating PI film includes the steps of:
1) mixing nano silicon dioxide and nano boron carbide and preparing a dispersion liquid;
2) adding pyromellitic dianhydride, biphenyl tetracarboxylic dianhydride, PPD, ODA, polyalkylene glycol, styrene-acrylonitrile copolymer, alumina, superfine glass wool and the dispersion liquid obtained in the step 1) into a solvent, and uniformly mixing;
3) coating the mixture obtained in the step 2) on a release layer, curing to form a semi-finished PI film, and then pressing another release layer on the surface of the semi-finished PI film to obtain the insulated PI film.
Further specific examples and comparative examples are provided below to further illustrate the present invention.
The test methods used in the following examples are all conventional methods unless otherwise specified.
Example 1
An insulating PI film comprising the following components in parts by weight:
wherein the solvent is N, N-dimethylformamide. The mixed nano particles are a mixture of nano silicon dioxide and nano boron carbide, the mass ratio of the nano silicon dioxide to the nano boron carbide in the mixed nano particles is 2:1, and the particle sizes of the nano silicon dioxide and the nano boron carbide are both 20-60 nm.
The preparation method of the insulating PI film comprises the following steps:
1) firstly, taking N, N-dimethylformamide, mixing nano silicon dioxide and nano boron carbide in N, N-dimethylformamide and preparing into a dispersion liquid;
2) adding pyromellitic dianhydride, biphenyl tetracarboxylic dianhydride, PPD, ODA, polyalkylene glycol, styrene-acrylonitrile copolymer, alumina, superfine glass wool and the dispersion liquid obtained in the step 1) into the residual N, N-dimethylformamide, and uniformly mixing;
3) coating the mixture obtained in the step 2) on a release layer, curing at the low temperature of 100-150 ℃ for 5-15min to form a semi-finished PI film, and then laminating another release layer on the surface of the semi-finished PI film to obtain the insulating PI film.
Example 2
An insulating PI film comprises the following components in parts by weight:
wherein the solvent is N, N-dimethylformamide. The mixed nano particles are a mixture of nano silicon dioxide and nano boron carbide, the mass ratio of the nano silicon dioxide to the nano boron carbide in the mixed nano particles is 2:1, and the particle sizes of the nano silicon dioxide and the nano boron carbide are both 20-60 nm.
The preparation method is the same as that of example 1.
Example 3
An insulating PI film comprises the following components in parts by weight:
wherein the solvent is N, N-dimethylformamide. The mixed nano particles are a mixture of nano silicon dioxide and nano boron carbide, the mass ratio of the nano silicon dioxide to the nano boron carbide in the mixed nano particles is 2:1, and the particle sizes of the nano silicon dioxide and the nano boron carbide are both 20-60 nm.
The preparation method is the same as that of example 1.
Comparative example 1
The only difference from example 1 is that: the components of the composition do not include polyalkylene glycol and styrene-acrylonitrile copolymer.
Comparative example 2
The only difference from example 1 is that: the composition does not include alumina.
Comparative example 3
The only difference from example 1 is that: the composition does not include superfine glass wool.
Comparative example 4
The only difference from example 1 is that: the composition does not include mixed nanoparticles.
Comparative example 5
The only difference from example 1 is that: the mixed nanoparticles are replaced by nanosilica.
Comparative example 6
The only difference from example 1 is that: the mixed nanoparticles are replaced by nano boron carbide.
The volume resistivity, heat distortion temperature and surface hardness of the PI film samples obtained in examples 1 to 3 and comparative examples 1 to 6 were measured by the following methods:
the volume resistivity test method comprises the following steps: measured according to GB/T1410-2006;
surface hardness: measured according to GB/T6739-2006.
The results are shown in table 1 below:
as can be seen from the comparison results of examples 1-3 and comparative examples 1-5, the PI film obtained by the invention has excellent insulating property, high temperature resistance, high hardness and excellent scratch resistance.
From the comparison results of example 1 with comparative example 1, it can be seen that the polyalkylene glycol and styrene-acrylonitrile copolymer can improve the strength and heat resistance of the PI film;
from the comparison results of example 1 and comparative example 2, it can be seen that the addition of alumina can improve the insulating property of the PI film;
from the comparison result of the example 1 and the comparative example 3, the superfine glass wool can improve the insulating property and the heat resistance of the PI film;
from the comparison result of the embodiment 1 and the comparative example 4, the addition of the mixed nanoparticles can obviously improve the insulating property, the high temperature resistance and the surface hardness of the PI film, and further, the results of the comparative examples 5 and 6 are combined, so that the effect obtained by singly using any one of the nano silicon dioxide and the nano boron carbide is not as good as the effect obtained by compounding the nano silicon dioxide and the nano boron carbide, and the effect of compounding the nano silicon dioxide and the nano boron carbide can not cause the reduction of the insulating property on the premise of obviously improving the high temperature resistance, the strength and the scratch resistance of the PI film, which shows that the combination property of the PI film is improved by the complementation enhancement of the nano silicon dioxide and the nano.
While embodiments of the invention have been disclosed above, it is not limited to the applications listed in the description and the embodiments, which are fully applicable in all kinds of fields of application of the invention, and further modifications may readily be effected by those skilled in the art, so that the invention is not limited to the specific details without departing from the general concept defined by the claims and the scope of equivalents.
Claims (9)
2. the insulating PI film of claim 1 wherein the solvent is any one or more of N, N-dimethylformamide, dimethylacetamide and triethylamine.
3. The insulating PI film of claim 1, wherein the mixed nanoparticles are a mixture of nano-silica and nano-boron carbide.
4. The insulating PI film of claim 3 wherein a mass ratio of nanosilica and nano boron carbide in said mixed nanoparticles is 2: 1.
5. The insulating PI film of claim 4 wherein said nanosilica and said nanosborocarbide each have a particle size of 20-60 nm.
9. the insulating PI film according to any one of claims 2 to 8, wherein the preparation method comprises the steps of:
1) mixing nano silicon dioxide and nano boron carbide and preparing a dispersion liquid;
2) adding pyromellitic dianhydride, biphenyl tetracarboxylic dianhydride, PPD, ODA, polyalkylene glycol, styrene-acrylonitrile copolymer, alumina, superfine glass wool and the dispersion liquid obtained in the step 1) into a solvent, and uniformly mixing;
3) coating the mixture obtained in the step 2) on a release layer, curing to form a semi-finished PI film, and then pressing another release layer on the surface of the semi-finished PI film to obtain the insulated PI film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110118506.2A CN112812559A (en) | 2021-01-28 | 2021-01-28 | Insulating PI film and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110118506.2A CN112812559A (en) | 2021-01-28 | 2021-01-28 | Insulating PI film and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112812559A true CN112812559A (en) | 2021-05-18 |
Family
ID=75859910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110118506.2A Pending CN112812559A (en) | 2021-01-28 | 2021-01-28 | Insulating PI film and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112812559A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114369361A (en) * | 2021-12-31 | 2022-04-19 | 广州惠利电子材料有限公司 | Insulating PI membrane material |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102668108A (en) * | 2009-11-20 | 2012-09-12 | E.I.内穆尔杜邦公司 | Assemblies comprising a polyimide film and an electrode, and methods relating thereto |
CN105307861A (en) * | 2013-05-31 | 2016-02-03 | 株式会社钟化 | Insulated coating material and use of same |
CN109161198A (en) * | 2018-08-24 | 2019-01-08 | 桂林电器科学研究院有限公司 | A kind of low thermal coefficient of expansion matt black polyamide thin film and preparation method thereof |
CN109880366A (en) * | 2019-03-12 | 2019-06-14 | 无锡创彩光学材料有限公司 | A kind of high insulation resistance black polyamide composite membrane and preparation method thereof |
-
2021
- 2021-01-28 CN CN202110118506.2A patent/CN112812559A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102668108A (en) * | 2009-11-20 | 2012-09-12 | E.I.内穆尔杜邦公司 | Assemblies comprising a polyimide film and an electrode, and methods relating thereto |
CN105307861A (en) * | 2013-05-31 | 2016-02-03 | 株式会社钟化 | Insulated coating material and use of same |
CN109161198A (en) * | 2018-08-24 | 2019-01-08 | 桂林电器科学研究院有限公司 | A kind of low thermal coefficient of expansion matt black polyamide thin film and preparation method thereof |
CN109880366A (en) * | 2019-03-12 | 2019-06-14 | 无锡创彩光学材料有限公司 | A kind of high insulation resistance black polyamide composite membrane and preparation method thereof |
Non-Patent Citations (4)
Title |
---|
刘洋等: "方波脉冲下纳米氧化硅掺杂对聚酰亚胺绝缘性能的影响", 《高压电器》 * |
刘洋等: "纳米氧化铝掺杂对高速动车组牵引电机绝缘性能的影响", 《铁道学报》 * |
张兴涛等: "无机纳米掺杂对聚酰亚胺绝缘性能影响", 《高压电器》 * |
张兴涛等: "聚酰亚胺纳米复合薄膜耐电晕机理研究", 《绝缘材料》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114369361A (en) * | 2021-12-31 | 2022-04-19 | 广州惠利电子材料有限公司 | Insulating PI membrane material |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110452418B (en) | High-thermal-conductivity polyimide film prepared from core-shell structure heat-conducting filler and preparation method thereof | |
US11945924B2 (en) | Fluorine-containing resin composition, and resin vanish, fluorine-containing dielectric sheet, laminate, copper clad laminate and printed circuit board containing the same | |
CN109401313B (en) | Polyimide film and preparation method thereof | |
WO2018181606A1 (en) | Heat-conducting member and heat-dissipating structure including said heat-conducting member | |
TW202307023A (en) | Fluorine-containing resin-based resin composition and application thereof | |
CN112812341B (en) | High-thermal-conductivity composite particle/polyimide film with four-needle-shaped structure and preparation method thereof | |
CN109438735B (en) | High-thermal-conductivity polyimide-based composite film and preparation method thereof | |
WO2011111684A1 (en) | Thermally conductive polyimide film and thermally conductive laminate produced using same | |
Li et al. | Improvements in transmittance, mechanical properties and thermal stability of silica–polyimide composite films by a novel sol–gel route | |
CN111471300A (en) | Heat-conducting polyimide insulating film and preparation method thereof | |
CN111471299B (en) | Heat-conducting and insulating polyimide nano composite film and preparation method thereof | |
CN115584129A (en) | Heat-conducting silica gel sheet and preparation method thereof | |
CN112812559A (en) | Insulating PI film and preparation method thereof | |
CN115806685A (en) | Polyimide film and preparation method thereof | |
CN111925543A (en) | Low-humidity low-thermal expansion coefficient polyimide composite film material and preparation method thereof | |
Weng et al. | Improved thermal conductivities of epoxy resins containing surface functionalized BN nanosheets | |
CN112708274A (en) | Heat-conducting insulating polyimide film and preparation method thereof | |
CN112521720A (en) | Resin composition for metal-clad foil plate and application thereof | |
CN112920603A (en) | High-temperature-resistant scratch-resistant high-transparency PI film | |
EP1441008B1 (en) | Curable epoxy resin compositions and process for production thereof | |
CN114032024B (en) | Preparation method of insulating paint with heat transfer function | |
CN114835861A (en) | Low-dielectric high-thermal-conductivity composite film and preparation method thereof | |
CN113292933B (en) | High-thermal-conductivity-coefficient pressure-sensitive adhesive and high-thermal-conductivity-coefficient pressure-sensitive adhesive tape | |
CN113501984B (en) | Graphene in-situ modified polyimide film and preparation method thereof | |
CN104070772A (en) | Production process of high-thermal conductivity resin glued copper foil |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210518 |