CN112779519A - Low-dielectric-constant silicon oxide film layer, preparation method thereof and semiconductor component - Google Patents
Low-dielectric-constant silicon oxide film layer, preparation method thereof and semiconductor component Download PDFInfo
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- CN112779519A CN112779519A CN201911092609.5A CN201911092609A CN112779519A CN 112779519 A CN112779519 A CN 112779519A CN 201911092609 A CN201911092609 A CN 201911092609A CN 112779519 A CN112779519 A CN 112779519A
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- oxide film
- silicon oxide
- film layer
- gas
- dielectric constant
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Abstract
A preparation method of a silicon oxide film layer with a low dielectric constant comprises the following steps: placing the substrate in a reaction chamber of plasma chemical vapor deposition; introducing plasma excitation gas, reaction gas and gaseous alcohol compounds or mixtures thereof into the reaction chamber for vapor deposition to obtain the silicon oxide film with low dielectric constant; the reaction gas comprises silicon source gas and oxygen source gas, and the introduction of the alcohol compound or the mixture thereof is later than that of the plasma excitation gas. The invention also provides a silicon oxide film layer prepared by the preparation method of the silicon oxide film layer with the low dielectric constant, and a semiconductor component comprising the silicon oxide film layer prepared by the preparation method of the silicon oxide film layer with the low dielectric constant.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a silicon oxide film with a low dielectric constant, a preparation method of the silicon oxide film and a semiconductor component with the silicon oxide film.
Background
Semiconductor components are now widely used. Semiconductor components typically include an electrically insulating material and electrically conductive structures disposed in the electrically insulating material. In the big data age, information processing of electronic products is continuously developing towards high frequency and high speed digitization of signal transmission. The dielectric constant of the electrically insulating material of the connecting conductive structure in the semiconductor component is an important factor influencing the high-speed operation of the semiconductor component.
Disclosure of Invention
In view of the above, the present invention provides a method for preparing a silicon oxide film with a low dielectric constant.
In addition, it is necessary to provide a silicon oxide film layer prepared by the method for preparing a silicon oxide film layer with a low dielectric constant, and a semiconductor component comprising the silicon oxide film layer prepared by the method for preparing a silicon oxide film layer with a low dielectric constant.
A preparation method of a silicon oxide film layer with a low dielectric constant comprises the following steps:
placing the substrate in a reaction chamber of plasma chemical vapor deposition; and
introducing plasma excitation gas, reaction gas and gaseous alcohol compounds or mixtures thereof into the reaction chamber for vapor deposition to obtain the silicon oxide film with low dielectric constant;
the reaction gas comprises silicon source gas and oxygen source gas, and the introduction of the alcohol compound or the mixture thereof is later than that of the plasma excitation gas.
A silicon oxide film layer prepared by the preparation method of the silicon oxide film layer with low dielectric constant.
A semiconductor component comprises the silicon oxide film layer prepared by the preparation method of the silicon oxide film layer with the low dielectric constant.
Compared with the prior art, the silicon oxide film layer prepared by the preparation method disclosed by the invention is low in dielectric constant, and is beneficial to high-speed operation of a semiconductor component when applied to the semiconductor component.
Drawings
FIG. 1 is a flow chart of a method for preparing a low-k silicon oxide film according to an embodiment of the present invention.
The following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Some embodiments of the invention are described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Referring to fig. 1, an embodiment of the invention provides a method for preparing a silicon oxide film with a low dielectric constant, which includes the following steps:
step S1, the substrate is placed in a reaction chamber of plasma chemical vapor deposition.
In this embodiment, the substrate is a silicon substrate.
Step S2 of preheating the substrate placed in the reaction chamber.
In this embodiment, the substrate is preheated to 100 ℃ to 1000 ℃.
Step S3, introducing plasma excitation gas, reaction gas, gaseous alcohol compound or their mixture into the reaction chamber for vapor deposition to obtain the low dielectric constant silicon oxide film. The reaction gas comprises silicon source gas and oxygen source gas, and the introduction of the alcohol compound or the mixture of the alcohol compound is later than that of the plasma excitation gas so as to reduce the evaporation of the alcohol compound or the mixture of the alcohol compound and the mixture of the alcohol compound.
Wherein the low-dielectric-constant silicon oxide film layer has a dielectric constant of 1.0 to 3.0. The silicon oxide film layer with the low dielectric constant is of a porous structure.
The plasma chemical vapor deposition may be Plasma Enhanced Chemical Vapor Deposition (PECVD) or High Density Plasma Chemical Vapor Deposition (HDPCVD).
In this embodiment, specifically, the vapor deposition may be performed under the conditions of an operating temperature of 100 ℃ to 1000 ℃, an operating pressure of 0.1mTorr to 9Torr, and an operating power of 50W to 5000W to induce the formation of the low-k silicon oxide film layer.
The plasma excitation gas may be selected from, but not limited to, at least one of argon, nitrogen, helium, and hydrogen.
In this embodiment, the flow rate of the reaction gas is 100sccm to 10000sccm during vapor deposition.
The silicon source gas may be selected from, but not limited to, at least one of silane (e.g., monosilane, disilane, etc.) and ethyl silicate (TEOS). The oxygen source gas may be selected from, but not limited to, at least one of oxygen gas and laughing gas.
The chemical structural formula of the alcohol compound is CxHyOzWherein x, y and z are independently selected from 1 to 10. For example, the alcohol compound may be methanol, ethanol, or the like.
In this embodiment, the flow rate of the alcohol compound or the mixture thereof during the vapor deposition is 5sccm to 10000 sccm.
In this embodiment, the content of the alcohol compound or the mixture thereof is increased during the chemical vapor deposition, which is beneficial for obtaining a silicon oxide film with a lower dielectric constant.
In other embodiments, step S2 may be omitted.
In other embodiments, after step S1 and before step S2 or step S3, the method for preparing a low-k silicon oxide film may further include: and vacuumizing the reaction chamber.
The embodiment of the invention also provides the silicon oxide film with the low dielectric constant prepared by the preparation method, and the silicon oxide film with the low dielectric constant can be also applied to semiconductor components. Wherein, the silicon oxide film layer with low dielectric constant is a porous structure, and the dielectric constant of the silicon oxide film layer is 1.0 to 3.0.
Compared with the prior art, the silicon oxide film layer prepared by the preparation method disclosed by the invention is low in dielectric constant, and is beneficial to high-speed operation of a semiconductor component when applied to the semiconductor component.
It should be understood that the above examples are only for illustrating the present invention and are not to be construed as limiting the present invention. It will be apparent to those skilled in the art that various other changes and modifications can be made in the technical spirit of the present invention within the scope of the appended claims.
Claims (10)
1. A preparation method of a silicon oxide film layer with a low dielectric constant comprises the following steps:
placing the substrate in a reaction chamber of plasma chemical vapor deposition; and
introducing plasma excitation gas, reaction gas and gaseous alcohol compounds or mixtures thereof into the reaction chamber for vapor deposition to obtain the silicon oxide film with low dielectric constant;
the reaction gas comprises silicon source gas and oxygen source gas, and the introduction of the alcohol compound or the mixture thereof is later than that of the plasma excitation gas.
2. The method of claim 1, wherein the vapor deposition conditions are controlled to: the working temperature is 100 ℃ to 1000 ℃, the working pressure is 0.1mTorr to 9Torr, and the working power is 50W to 5000W, so as to induce the formation of the silicon oxide film layer with low dielectric constant.
3. The method as claimed in claim 1, wherein the reaction gas has a flow rate of 100sccm to 10000sccm, and the alcohol compound or the mixture thereof has a flow rate of 5sccm to 10000 sccm.
4. The method of claim 1, wherein the plasma excitation gas is at least one selected from the group consisting of argon, nitrogen, helium, and hydrogen.
5. The method of claim 1, wherein the silicon source gas is at least one of silane and ethyl silicate, and the oxygen source gas is at least one of oxygen and laughing gas.
6. The method of claim 1, wherein the alcohol compound has a chemical formula of CxHyOzWherein x, y and z are each selected from 1 to 10.
7. The method of claim 1, wherein the low-k silicon oxide film has a dielectric constant of 1.0 to 3.0.
8. The method of claim 1, wherein after the step of disposing the substrate in the reaction chamber for plasma chemical vapor deposition and before the step of introducing the plasma excitation gas, the reaction gas, and the alcohol compound or the mixture thereof into the reaction chamber for vapor deposition, the method further comprises:
and vacuumizing the reaction chamber.
9. A silicon oxide film layer produced by the method for producing a silicon oxide film layer having a low dielectric constant as defined in any one of claims 1 to 8.
10. A semiconductor device comprising the silicon oxide film layer produced by the method for producing a low dielectric constant silicon oxide film layer according to any one of claims 1 to 8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911092609.5A CN112779519A (en) | 2019-11-11 | 2019-11-11 | Low-dielectric-constant silicon oxide film layer, preparation method thereof and semiconductor component |
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| CN201911092609.5A CN112779519A (en) | 2019-11-11 | 2019-11-11 | Low-dielectric-constant silicon oxide film layer, preparation method thereof and semiconductor component |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677625A (en) * | 2004-03-31 | 2005-10-05 | 半导体工程研究所股份有限公司 | Deposition method and semiconductor device |
| US20080200034A1 (en) * | 2007-02-21 | 2008-08-21 | Qinghuang Lin | Method to remove beol sacrificial materials and chemical residues by irradiation |
| CN102686773A (en) * | 2010-03-16 | 2012-09-19 | 东京毅力科创株式会社 | Film forming method and film forming apparatus |
| CN104120404A (en) * | 2014-07-23 | 2014-10-29 | 国家纳米科学中心 | Ultra-thin silicon oxide film material and manufacturing method thereof |
-
2019
- 2019-11-11 CN CN201911092609.5A patent/CN112779519A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1677625A (en) * | 2004-03-31 | 2005-10-05 | 半导体工程研究所股份有限公司 | Deposition method and semiconductor device |
| US20080200034A1 (en) * | 2007-02-21 | 2008-08-21 | Qinghuang Lin | Method to remove beol sacrificial materials and chemical residues by irradiation |
| CN102686773A (en) * | 2010-03-16 | 2012-09-19 | 东京毅力科创株式会社 | Film forming method and film forming apparatus |
| CN104120404A (en) * | 2014-07-23 | 2014-10-29 | 国家纳米科学中心 | Ultra-thin silicon oxide film material and manufacturing method thereof |
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