CN112768376A - Wafer cleaning device and wafer cleaning method - Google Patents
Wafer cleaning device and wafer cleaning method Download PDFInfo
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- CN112768376A CN112768376A CN202011630195.XA CN202011630195A CN112768376A CN 112768376 A CN112768376 A CN 112768376A CN 202011630195 A CN202011630195 A CN 202011630195A CN 112768376 A CN112768376 A CN 112768376A
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- wafer
- cleaning
- carbon dioxide
- liquid carbon
- positioner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a wafer cleaning device and a wafer cleaning method, comprising the steps of placing a wafer on a positioner for positioning; vacuumizing the vacuum generating assembly to enable vacuum to be formed between the positioner and the wafer; the drive component drives the positioner to rotate, so as to drive the wafer to rotate; the controller controls a gas transmission pipeline to transmit liquid carbon dioxide to the corresponding nozzle according to the first cleaning instruction so as to clean the lower surface of the wafer; the liquid carbon dioxide is used for cleaning the lower surface of the wafer and then is changed into gaseous carbon dioxide to enter the recovery cavity, and the recovery cavity recovers the gaseous carbon dioxide. For the device microstructure with high depth-width ratio under the nanometer size of the surface of the wafer, residues such as water molecules and the like can be easily removed, and carbon dioxide not only has an effective cleaning effect, but also has an effective drying effect and can be mixed with other cleaning agents for use.
Description
Technical Field
The invention relates to the field of wafer manufacturing technology, in particular to a wafer cleaning device and a wafer cleaning method.
Background
Wafer refers to the process of cleaning the wafer used for manufacturing silicon semiconductor circuit, and removing the pollutants generated by contacting with various organic matters, particles and metals in the process of continuously processing, shaping and polishing the wafer. Is an important process step in the wafer manufacturing process.
In a semiconductor cleaning process, particularly in the manufacture of high-level wafer products such as logic integrated circuits, storage, power devices and the like, the wafer products are processed by various complicated processes such as photolithography, wet process, deposition, oxidation and the like, and the process of cleaning the substrate is performed before or after each process to remove foreign matters and particles generated in each process, thereby ensuring the accuracy and reproducibility of the subsequent process yield.
In the semiconductor wet process required by the related 65-14nm pitch and the wafer product corresponding to the pitch of less than 14nm and up to 5nm, especially under the action of the size effect, the core problem of the wafer wet process is that liquid remains in the nano-sized high aspect ratio microstructure, the possible liquid tension cannot be effectively improved, and the high aspect ratio microstructure is difficult to clean, and the wafer cleaning device in the prior art has a non-compact structure, and cannot realize multi-condition spray cleaning.
Disclosure of Invention
The invention provides a wafer cleaning device and a wafer cleaning method, and aims to solve the technical problems that a wafer high-aspect-ratio microstructure is difficult to clean in the prior art and the like.
A wafer cleaning device for cleaning the lower surface of a wafer, comprising:
a positioner for positioning the wafer,
the driving assembly is used for driving the positioner to rotate;
the vacuum generating assembly is arranged on the positioner and enables vacuum to be formed between the positioner and the wafer;
a cleaning assembly positioned between the positioner and the wafer, the cleaning assembly comprising:
the mounting seat is arranged on the positioner;
the nozzles are arranged in the mounting seat, and are obliquely arranged with the lower surface of the wafer;
each nozzle is respectively connected with a gas transmission pipeline for transmitting cleaning agent to the nozzle, wherein the cleaning agent comprises liquid carbon dioxide;
the recovery cavity comprises a plurality of recovery rings and is used for recovering the cleaning agent after the wafer is cleaned;
the controller is used for controlling a gas pipeline to convey liquid carbon dioxide to the corresponding nozzle according to the first cleaning instruction so as to clean the lower surface of the wafer;
further, the wafer cleaning device is also provided with a heating component which is connected with a controller, and the controller controls the heating component to generate heat to heat the liquid carbon dioxide when the liquid carbon dioxide is used for cleaning the lower surface of the wafer.
Further, the controller controls a gas pipeline to intermittently deliver liquid carbon dioxide to the corresponding nozzle to clean the lower surface of the wafer.
Furthermore, a vacuum channel for accommodating the vacuum pipeline is arranged in the center of the mounting seat, six nozzles are uniformly arranged on the periphery of the vacuum channel, and jet ports of the nozzles point to the direction departing from the vacuum channel.
A wafer cleaning method using the wafer cleaning device comprises the following steps:
step A1, placing the wafer on a positioner for positioning;
step A2, the vacuum generating assembly is vacuumized to form vacuum between the positioner and the wafer;
step A3, the drive component drives the positioner to rotate, thereby driving the wafer to rotate;
step A4, the controller controls a gas transmission pipeline to transmit liquid carbon dioxide to the corresponding nozzle according to the first cleaning instruction so as to clean the lower surface of the wafer;
step A5, the liquid carbon dioxide cleans the lower surface of the wafer and then turns into gaseous carbon dioxide to enter the recovery cavity, and the recovery cavity recovers the gaseous carbon dioxide.
Further, the wafer cleaning apparatus is further provided with a heating member connected to the controller, and in step a4, the controller controls the heating member to generate heat to heat the liquid carbon dioxide when cleaning the lower surface of the wafer with the liquid carbon dioxide.
Further, in step a4, the controller controls the gas transmission pipeline to intermittently transmit liquid carbon dioxide to the corresponding nozzle to clean the lower surface of the wafer.
Further, the cleaning agent comprises nitrogen and liquid carbon dioxide, and the step A4 is as follows: and the controller controls one gas transmission pipeline to transmit liquid carbon dioxide to the corresponding nozzle according to the second cleaning instruction, and simultaneously controls the other gas transmission pipeline to transmit nitrogen to the corresponding nozzle so as to simultaneously clean the lower surface of the wafer by using the nitrogen and the liquid carbon dioxide.
Further, the cleaning agent comprises a first cleaning agent and a liquid second cleaning agent, the second cleaning agent is different from the first cleaning agent, the first cleaning agent is liquid carbon dioxide, and the step A4 is as follows: the controller controls one gas transmission pipeline to transmit the first cleaning agent to the corresponding nozzle according to the third cleaning instruction, and simultaneously controls the other gas transmission pipeline to transmit the second cleaning agent to the corresponding nozzle, so that the lower surface of the wafer is cleaned after the second cleaning agent is atomized.
Further, the second cleaning agent is one of a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of ammonia water and hydrogen peroxide, hydrofluoric acid or ultrapure water.
The beneficial technical effects of the invention are as follows: for the device microstructure with high depth-width ratio under the nanometer size of the surface of the wafer, residues such as water molecules and the like can be easily removed, and carbon dioxide not only has an effective cleaning effect, but also has an effective drying effect and can be mixed with other cleaning agents for use.
Drawings
FIG. 1 is a schematic view of a wafer cleaning apparatus according to the present invention;
FIG. 2 is a schematic view of a wafer cleaning apparatus according to the present invention;
FIG. 3 is a schematic view of a wafer cleaning apparatus according to the present invention;
FIG. 4 is a schematic diagram of a cleaning assembly of a wafer cleaning apparatus according to the present invention;
FIG. 5 is a schematic diagram of a connection control structure of a wafer cleaning apparatus according to the present invention;
FIG. 6 is a schematic diagram of a carbon dioxide fluid removal high aspect ratio structure for a wafer cleaning apparatus and method in accordance with the present invention;
FIG. 7 is a schematic diagram of the effect of carbon dioxide fluid in removing moisture from high aspect ratio structures according to the present invention;
FIG. 8 is a diagram illustrating the effect of removing moisture from a high aspect ratio structure according to the prior art;
FIG. 9 is a schematic diagram of a wafer cleaning method according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
Referring to fig. 1 to 5, a wafer cleaning apparatus for cleaning a lower surface of a wafer includes:
a positioner (1) for positioning the wafer,
the driving assembly (2) is used for driving the positioner to rotate;
the vacuum generating assembly (3) is arranged on the positioner and enables vacuum to be formed between the positioner and the wafer;
a cleaning assembly (4) positioned between the positioner and the wafer, the cleaning assembly (4) comprising:
a mounting seat (41) arranged on the positioner (1);
a plurality of nozzles (42) provided in the mounting seat (41), the nozzles (42) being arranged obliquely to the lower surface of the wafer;
each nozzle (42) is respectively connected with a gas transmission pipeline (43) for transmitting cleaning agent to the nozzle (42), wherein the cleaning agent comprises liquid carbon dioxide;
the recovery cavity (5) comprises a plurality of recovery rings and is used for recovering the cleaning agent after the wafer is cleaned;
the controller (6) is connected with the driving assembly (2) and is used for controlling the driving assembly (2) to drive and controlling a gas pipeline (43) to convey liquid carbon dioxide to the corresponding nozzle (42) according to a first cleaning instruction so as to clean the lower surface of the wafer;
furthermore, the wafer cleaning device is also provided with a heating component (7) which is connected with a controller (6), and the controller (6) controls the heating component (7) to generate heat to heat the liquid carbon dioxide when the liquid carbon dioxide is used for cleaning the lower surface of the wafer.
Further, the controller (6) controls a gas delivery pipe (43) to intermittently deliver liquid carbon dioxide to the corresponding nozzle (42) to clean the lower surface of the wafer.
Furthermore, a vacuum channel for accommodating the vacuum pipeline is arranged in the center of the mounting seat (41), six nozzles (42) are uniformly arranged around the vacuum channel, and the jet ports of the nozzles (42) point to the direction away from the vacuum channel.
Referring to fig. 6, in particular, the carbon dioxide fluid can effectively remove the residue in the high aspect ratio structure, but it can also be used for cleaning the surface of the wafer, and the carbon dioxide has the dual functions of cleaning and drying.
Specifically, the use of carbon dioxide and nitrogen in combination can speed up the wafer cleaning process.
Specifically, the heating member (7) is arranged to instantaneously contact the wafer with the output liquid carbon dioxide.
Specifically, during the cleaning process, the positioner (1) is rotated to achieve a conjugate time difference with the CO2 fluid.
Specifically, the intermittent injection of the CO2 fluid can achieve the self-change of CO2 in partial cleaning into gas released in the recovery cavity for recovery.
Fig. 8 shows a structure after a general cleaning process in the prior art is used for cleaning, and it is seen that in the prior art, moisture in a device is not easily cleaned, and the device structure is easily destroyed due to too large surface tension of water molecules.
Fig. 7 shows the structure after the carbon dioxide cleaning process of the present invention, which can effectively remove the moisture and other residues from the high aspect ratio structure of the device, and the CO2 is cleaned and then changed into gas to be removed.
Referring to fig. 9, the present invention further provides a wafer cleaning method using the aforementioned wafer cleaning apparatus, including the steps of:
step A1, placing the wafer on a positioner (1) for positioning;
step A2, vacuumizing the vacuum generating assembly (3) to form vacuum between the positioner and the wafer;
step A3, the drive component (2) drives the positioner to rotate, thereby driving the wafer to rotate;
step A4, the controller (6) controls a gas transmission pipeline (43) to transmit liquid carbon dioxide to the corresponding nozzle (42) according to the first cleaning instruction so as to clean the lower surface of the wafer;
step A5, the liquid carbon dioxide cleans the lower surface of the wafer and then turns into gaseous carbon dioxide to enter the recovery cavity (5), and the recovery cavity (5) recovers the gaseous carbon dioxide.
Further, the wafer cleaning apparatus is further provided with a heating member (7) connected to the controller (6), and in step a4, the controller (6) controls the heating member (7) to generate heat to heat the liquid carbon dioxide when cleaning the lower surface of the wafer using the liquid carbon dioxide.
Further, in step a4, the controller (6) controls the gas transmission pipeline (43) to intermittently transmit liquid carbon dioxide to the corresponding nozzle (42) to clean the lower surface of the wafer.
Further, the cleaning agent comprises nitrogen and liquid carbon dioxide, and the step A4 is as follows: the controller (6) controls one gas transmission pipeline (43) to transmit liquid carbon dioxide to the corresponding nozzle (42) according to the second cleaning instruction, and controls the other gas transmission pipeline (43) to transmit nitrogen to the corresponding nozzle (42) so as to clean the lower surface of the wafer by using the nitrogen and the liquid carbon dioxide simultaneously.
Further, the cleaning agent comprises a first cleaning agent and a liquid second cleaning agent, the second cleaning agent is different from the first cleaning agent, the first cleaning agent is liquid carbon dioxide, and the step A4 is as follows: the controller (6) controls one gas transmission pipeline (43) to transmit the first cleaning agent to the corresponding nozzle (42) according to the third cleaning instruction, and simultaneously controls the other gas transmission pipeline (43) to transmit the second cleaning agent to the corresponding nozzle (42), so that the lower surface of the wafer is cleaned after the second cleaning agent is atomized.
Further, the second cleaning agent is one of a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of ammonia water and hydrogen peroxide, hydrofluoric acid or ultrapure water.
Specifically, the carbon dioxide fluid can effectively remove the residue in the high aspect ratio structure, and certainly, the carbon dioxide fluid can also be used for cleaning the surface of a common wafer, and the carbon dioxide fluid has the dual effects of cleaning and drying.
Specifically, the use of carbon dioxide and nitrogen in combination can speed up the wafer cleaning process.
Specifically, the heating member (7) is arranged to instantaneously contact the wafer with the output liquid carbon dioxide.
Specifically, during the cleaning process, the positioner (1) is rotated to achieve a conjugate time difference with the CO2 fluid.
Specifically, the intermittent injection of the CO2 fluid can achieve the self-change of CO2 in partial cleaning into gas released in the recovery cavity for recovery.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. A wafer cleaning apparatus for cleaning a lower surface of a wafer, comprising:
a positioner (1) for positioning a wafer,
a drive assembly (2) for driving the positioner to rotate;
the vacuum generating assembly (3) is arranged on the positioner and enables vacuum to be formed between the positioner and the wafer;
a cleaning assembly (4) between the positioner and the wafer, the cleaning assembly (4) comprising:
a mounting seat (41) arranged on the positioner (1);
a plurality of nozzles (42) disposed within the mounting base (41), the nozzles (42) being arranged obliquely to a lower surface of the wafer;
each nozzle (42) is respectively connected with a gas transmission pipeline (43) for transmitting cleaning agent to the nozzle (42), wherein the cleaning agent comprises liquid carbon dioxide;
the recovery cavity (5) comprises a plurality of recovery rings and is used for recovering the cleaning agent after the wafer is cleaned;
and the controller (6) is used for controlling the gas transmission pipeline (43) to transmit the liquid carbon dioxide to the corresponding nozzle (42) according to a first cleaning instruction so as to clean the lower surface of the wafer.
2. A wafer cleaning apparatus according to claim 1, wherein a heating member (7) is further provided, and the controller (6) is connected to the wafer cleaning apparatus, and the controller (6) controls the heating member (7) to generate heat to heat the liquid carbon dioxide when the liquid carbon dioxide is used to clean the lower surface of the wafer.
3. A wafer cleaning apparatus as claimed in claim 1, wherein said controller (6) controls one of said gas delivery pipes (43) to intermittently deliver said liquid carbon dioxide to a corresponding one of said nozzles (42) to clean the lower surface of said wafer.
4. A wafer cleaning apparatus as claimed in claim 1, characterized in that a vacuum channel for accommodating a vacuum line is provided centrally in the mounting seat (41), six nozzles (42) are arranged uniformly around the vacuum channel, and the ejection openings of the nozzles (42) point away from the vacuum channel.
5. A wafer cleaning method using the wafer cleaning apparatus according to any one of claims 1 to 4, comprising the steps of:
step A1, placing the wafer on a positioner (1) for positioning;
step A2, vacuumizing a vacuum generating assembly (3) to form vacuum between the positioner and the wafer;
step A3, a driving component (2) drives the positioner to rotate, so as to drive the wafer to rotate;
step A4, the controller (6) controls one gas transmission pipeline (43) to transmit the liquid carbon dioxide to the corresponding nozzle (42) according to a first cleaning instruction so as to clean the lower surface of the wafer;
step A5, the liquid carbon dioxide cleans the lower surface of the wafer and then turns into gaseous carbon dioxide to enter the recovery cavity (5), and the recovery cavity (5) recovers the gaseous carbon dioxide.
6. A wafer cleaning method according to claim 5, wherein the wafer cleaning apparatus is further provided with a heating member (7) connected to the controller (6), and in the step A4, the controller (6) controls the heating member (7) to generate heat to heat the liquid carbon dioxide when the liquid carbon dioxide is used to clean the lower surface of the wafer.
7. The wafer cleaning method as claimed in claim 5, wherein in the step A4, the controller (6) controls the gas transmission pipeline (43) to intermittently transmit the liquid carbon dioxide to the corresponding nozzle (42) to clean the lower surface of the wafer.
8. The method as claimed in claim 5, wherein the cleaning agent comprises nitrogen and liquid carbon dioxide, and the step A4 is: the controller (6) controls one gas transmission pipeline (43) to transmit the liquid carbon dioxide to the corresponding nozzle (42) according to a second cleaning instruction, and controls the other gas transmission pipeline (43) to transmit nitrogen to the corresponding nozzle (42) so as to clean the lower surface of the wafer by using the nitrogen and the liquid carbon dioxide at the same time.
9. The method as claimed in claim 5, wherein the cleaning agent comprises a first cleaning agent and a second cleaning agent in liquid state, the second cleaning agent is different from the first cleaning agent, the first cleaning agent is liquid carbon dioxide, and the step A4 is as follows: and the controller (6) controls one gas transmission pipeline (43) to correspondingly transmit the first cleaning agent to the nozzle (42) according to a third cleaning instruction, and simultaneously controls the other gas transmission pipeline (43) to correspondingly transmit a second cleaning agent to the nozzle (42), so that the second cleaning agent is atomized and then used for cleaning the lower surface of the wafer.
10. The wafer cleaning method according to claim 9, wherein the second cleaning agent is one of a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of ammonia water and hydrogen peroxide, hydrofluoric acid, and ultrapure water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011630195.XA CN112768376B (en) | 2020-12-30 | 2020-12-30 | Wafer cleaning device and wafer cleaning method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011630195.XA CN112768376B (en) | 2020-12-30 | 2020-12-30 | Wafer cleaning device and wafer cleaning method |
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| CN112768376A true CN112768376A (en) | 2021-05-07 |
| CN112768376B CN112768376B (en) | 2022-12-16 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113319044A (en) * | 2021-06-11 | 2021-08-31 | 湖南国创同芯科技有限公司 | Impact type wafer cleaning machine |
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| Publication number | Publication date |
|---|---|
| CN112768376B (en) | 2022-12-16 |
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