CN112768348B - 一种铌酸锂材料刻蚀及提高侧壁角度的优化方法 - Google Patents
一种铌酸锂材料刻蚀及提高侧壁角度的优化方法 Download PDFInfo
- Publication number
- CN112768348B CN112768348B CN202110059078.0A CN202110059078A CN112768348B CN 112768348 B CN112768348 B CN 112768348B CN 202110059078 A CN202110059078 A CN 202110059078A CN 112768348 B CN112768348 B CN 112768348B
- Authority
- CN
- China
- Prior art keywords
- etching
- lithium niobate
- side wall
- optimization method
- improving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 238000005530 etching Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000000463 material Substances 0.000 title claims abstract description 25
- 238000005457 optimization Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000001312 dry etching Methods 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000012937 correction Methods 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012670 alkaline solution Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910001868 water Inorganic materials 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 239000003929 acidic solution Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000011232 storage material Substances 0.000 abstract description 2
- 230000015654 memory Effects 0.000 description 14
- 210000004027 cell Anatomy 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
- H01L21/30635—Electrolytic etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
本发明属于存储材料制备技术领域,具体为一种铌酸锂材料刻蚀及提高侧壁角度的优化方法。本发明方法包括:硬掩膜制作、倾斜刻蚀、金属黑化修正侧壁以及湿法腐蚀清洗。与传统的直接利用干法刻蚀铌酸锂图形不同,本方法将干法刻蚀与湿法刻蚀相结合,不仅能够获得刻蚀角度陡直、侧壁光滑的铌酸锂图形,而且刻蚀效率也极高,同时可对铌酸锂图形进行后期修正。本发明方法对基于铌酸锂材料的纳米加工具有极大意义,并且不会破坏材料的铁电特性。
Description
技术领域
本发明属于存储材料制备技术领域,具体涉及一种铌酸锂材料刻蚀及提高侧壁角度的优化方法。
背景技术
铌酸锂单晶材料因具有独特的光电、压电和铁电等特性,在声表面波器件、光电调制器、压电传感器和铁电存储器领域有着广泛的应用。基于导电畴壁的原理,利用铌酸锂材料制作而成的非易失性铁电畴壁存储器和铁电场效应管极大促进了纳米畴壁电子学的发展。而且,利用离子刀(Smart Cut)方法,能够制备亚微米厚度的铌酸锂单晶薄膜,然后与SiO2/Si衬底或Si基读写电路基片键合到一起,使得大规模制造与CMOS工艺兼容的铁电畴壁存储器成为了可能,该存储器有着巨大的市场应用前景。与没有刻蚀的薄膜表面存储单元相比,将铌酸锂薄膜表面刻蚀成凸块结构的存储单元有着更好的信息读写功能,且凸块侧边的倾斜角越高,信息的保持性能会越好。但是对于高倾斜角的铌酸锂凸块的加工仍然是一个国际难题。通常对于铌酸锂凸块的制造,可以使用微机械加工、激光加工刻蚀、干法刻蚀、湿法刻蚀。其中湿法刻蚀与干法刻蚀是微电子集成电路中比较常用的两种方法,但是湿法刻蚀具有很差的各项异性,并且刻蚀速率较慢。干法刻蚀需要用到氟基气体,这必然会造成LiF的生成,从而阻碍对铌酸锂单元的进一步刻蚀。据文献报道,可利用质子交换的方式改变铌酸锂的化学配比,形成新的化合物可以提高侧壁的刻蚀角度,但是此方法会对材料的铁电性造成不可逆的损害,无法实现信息存储功能。作为存储器及光电器件,铌酸锂的刻蚀角度对器件性能影响较大,所以探索一套新的刻蚀方案能够刻蚀出陡直、光滑的铌酸锂图形至关重要。
发明内容
本发明的目的在于克服上述现有技术存在的缺陷而提供一种铌酸锂材料刻蚀及提高侧壁角度的优化方法。该方法由多种工艺步骤组成,通过这些工艺结合起来,可以刻蚀出侧壁几乎垂直的铌酸锂凸块图形。
本发明提供的铌酸锂材料刻蚀及提高侧壁角度的优化方法,具体步骤为:
(1)在铌酸锂基片表面制作硬掩膜;
(2)通过干法刻蚀铌酸锂;
(3)利用金属黑化,修正铌酸锂图形的侧壁;
(4)使用湿法腐蚀清洗刻蚀后的基片。
本发明中,所述铌酸锂材料包括但不限于铌酸锂单晶、铌酸锂薄膜、掺杂MgO、Mn2O5、或Fe2O3的铌酸锂盐单晶或薄膜。
本发明中,所述在铌酸锂基片表面制作硬掩膜,具体流程为:
(1)在铌酸锂基片上生长种子层;
(2)使用光刻技术制作出所需的图形;
(3)利用电镀方法制备掩膜。
其中,所述种子层的材料是可导电的金属,包括Cr、Au、Pt、Al或Ti。
其中,所述硬掩膜为耐刻蚀金属,例如Ni、或Cu,厚度为10纳米-20微米。
本发明中,所述干法刻蚀铌酸锂,可以采取倾斜样品的方式进行刻蚀,其倾斜角度为1°-89°;优选倾斜角度为15°-70°。
其中,所述干法刻蚀铌酸锂,具体倾斜角度与倾斜刻蚀时间根据刻蚀速率与目标刻蚀深度决定。
本发明中,所述利用金属黑化进行侧壁修正,其主要流程为:在刻蚀后的样品表面生长金属,并在高温下进行退火,之后使用腐蚀溶液清洗黑化后的金属。
其中,使用的金属的化学活性较高,能够吸取铌酸锂晶体中的氧原子,包括但不限于Mg、Zn、Al、Li或Cu。
其中,所述退火时间为1分钟-100小时,温度为100℃-800℃,具体数值根据刻蚀深度,刻蚀角度等条件确定。优选退火时间2-50小时,退火温度为400℃-700℃。
其中,所述使用的腐蚀溶液为酸性溶液或碱性溶液,酸性溶液为盐酸、氢氟酸或硝酸,碱性溶液为氢氧化钠、氨水;这些溶液的溶剂包括过氧化氢或去离子水,根据实际情况,选择一种或多种溶液的混合液进行腐蚀。
其中,所述腐蚀溶液清洗的过程中可使用水浴加热,温度为0℃-100℃。优选水浴加热温度为60℃-85℃。
本发明方法的优点:将干法刻蚀与湿法腐蚀相结合,并在干法刻蚀过程中倾斜放置样品,这样可以使得更多的等离子体轰击到铌酸锂图形侧壁,之后使用湿法腐蚀去除刻蚀副产物,通过这种方式可以有效的减弱副产物LiF对刻蚀的影响,并且使侧壁更加光滑。利用金属黑化修正图形侧壁,主要利用黑化区域能够一定程度上加速腐蚀铌酸锂,从而使得侧壁的倾斜角度更加陡直。本发明方法对基于铌酸锂材料的纳米加工及其存储、光电等器件性能改善具有极大意义。
附图说明
图1为本发明实施例的铌酸锂图形的刻蚀流程示意图。
图2为利用对比例提供的刻蚀方法和本发明实施例提供的刻蚀方法分别刻蚀出的铌酸锂图形扫描电镜(SEM)图形。
图3为利用对比例提供的刻蚀方法和本发明实施例提供的刻蚀方法分别制备出的存储单元的SEM图像。
图4为利用对比例提供的刻蚀方法和本发明实施例提供的刻蚀方法分别制备出的存储单元的电滞回线图。
图5为利用对比例提供的刻蚀方法和本发明实施例提供的刻蚀方法分别制备出的存储单元的矫顽电场拟合图。
图6为本发明实施例所述的黑化后铌酸锂图形SEM图。
具体实施方式
以下结合附图和实施例对本发明进行进一步说明。
在附图中,为了清楚起见,夸大了层和区域的厚度,图中所示的各部分之间的尺寸比例关系并不反映实际的尺寸比例关系。
图1为利用本发明刻蚀铌酸锂凸块的过程。所选用的铌酸锂材料为5mol%MgO掺杂的X切铌酸锂单晶片。首先在其表面利用磁控溅射生长20纳米厚的Cr和40纳米厚的Au作为种子层,然后利用电子束光刻技术制作出铌酸锂图形,如图1a所示。之后在曝光出图形的区域电镀100纳米的Ni作为硬掩膜,并用丙酮去除多余的光刻胶,如图1b-c所示。之后利用反应离子刻蚀(RIE)***对种子层和铌酸锂进行刻蚀。首先采用Ar和Ar/O2分别对Au和Cr进行刻蚀,之后使用Ar和SF6混合气体对铌酸锂进行刻蚀,其速率为8纳米每分钟。为了获得深度大约为100纳米的铌酸锂图形,总刻蚀时间为12分钟。整个过程共可分为三步:(1)以正常方式刻蚀铌酸锂6分钟,如图1d所示;(2)将一侧抬高使样品与水平面呈15°夹角,在同样的刻蚀参数下刻蚀3分钟,如图1e所示;(3)使样品另一侧抬高,形成15°夹角,继续刻蚀3分钟,如图1f所示。
在刻蚀之后使用碱性溶液对样品进行清洗,所用的溶液为NH4OH,H2O2,H2O按照1:1:1的比例混合而成,并在85℃下进行水浴加热,清洗10分钟。
为了验证本实施例的刻蚀效果,我们也使用传统方法进行刻蚀作为对比例。在对比例中,我们使用金属Cr作为硬掩膜的材料,利用Ar和SF6直接对铌酸锂刻蚀12分钟。
图2为利用对比例提供的刻蚀方法刻蚀铌酸锂12分钟(左图)与利用本实施例提供的刻蚀方法刻蚀铌酸锂12分钟(右图)的SEM图像,可以明显看出其侧壁的刻蚀角度从70°增加至83°。
图3为利用对比例提供的刻蚀方法(左图)和利用本实施例提供的刻蚀方法(右图)分别制备的铌酸锂存储单元的SEM图像。插图中展示的为相应的铌酸锂侧壁的倾斜角度。
图4为图3中相应存储单元的电滞回线测量结果。可以看出随着角度的增加电滞回线关于电压轴呈更加对称化的趋势,并且印记电压从5V(70°刻蚀角度),减小至1.85V(83°刻蚀角度)。可以看出利用本发明制作的铌酸锂存储器在极化保持特性上有了极大的提高。
图5为图3中相应存储单元的矫顽电场拟合示意图,可以看出矫顽电场在刻蚀角度大的存储单元中也有了明显减小,这意味着能够在更低的电压下对其进行读写操作。
图6为使用300纳米厚的金属Al在400℃的条件下黑化4小时后的SEM图像,可以看出侧壁倾角几乎垂直。
综上,本发明所提供的一种铌酸锂材料刻蚀及侧壁角度优化方法,将硬掩膜制作、倾斜刻蚀、金属黑化修正侧壁以及湿法腐蚀清洗结合起来,能够获得侧壁陡直且光滑的铌酸锂图形,为之后的铌酸锂加工技术提供了极大的帮助。
可以理解的是,以上实施方式仅仅是为了说明本发明可用于的领域之一,然而本发明并不局限于此。对于本领域内的普通技术人员在本发明公开的技术范围内,可轻易想到的变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (6)
1.一种铌酸锂材料刻蚀及提高侧壁角度的优化方法,其特征在于,具体步骤为:
(1)在铌酸锂基片表面制作硬掩膜;
(2)通过干法刻蚀铌酸锂;
(3)利用金属黑化,修正铌酸锂图形的侧壁;利用金属黑化进行侧壁修正,其流程为:在刻蚀后的样品表面生长金属,并在高温下进行退火,之后使用腐蚀溶液清洗黑化后的金属;其中,所使用金属的化学活性较高,能够吸取铌酸锂晶体中的氧原子,选自Mg、Zn、Al、Li或Cu;所述退火时间为1分钟-100小时,温度为100℃-800℃;
(4)使用湿法腐蚀清洗刻蚀后的基片;
其中,所述铌酸锂材料选自铌酸锂单晶、铌酸锂薄膜、掺杂MgO、Mn2O5或Fe2O3的铌酸锂盐单晶或薄膜。
2.根据权利要求1所述的铌酸锂材料刻蚀及提高侧壁角度的优化方法,其特征在于,所述在铌酸锂基片表面制作硬掩膜,具体流程为:
(1)在铌酸锂基片上生长种子层;
(2)使用光刻技术制作出所需的图形;
(3)利用电镀方法制备掩膜;
其中,所述种子层材料选自Cr、Au、Pt、Al或Ti;所述硬掩膜为耐刻蚀金属,选自Ni或Cu,厚度为10纳米-20微米。
3.根据权利要求2所述的铌酸锂材料刻蚀及提高侧壁角度的优化方法,其特征在于,所述干法刻蚀铌酸锂,采取倾斜样品的方式进行刻蚀,其倾斜角度为1°-89°。
4.根据权利要求3所述的铌酸锂材料刻蚀及提高侧壁角度的优化方法,其特征在于,所述干法刻蚀铌酸锂,具体倾斜角度与倾斜刻蚀时间根据刻蚀速率与目标刻蚀深度决定。
5.根据权利要求1所述的铌酸锂材料刻蚀及提高侧壁角度的优化方法,其特征在于,所述腐蚀溶液为酸性溶液或碱性溶液,酸性溶液为盐酸、氢氟酸或硝酸,碱性溶液为氢氧化钠或氨水。
6.根据权利要求1所述的铌酸锂材料刻蚀及提高侧壁角度的优化方法,其特征在于,所述腐蚀溶液清洗的过程中使用水浴加热,温度为0℃-100℃。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110059078.0A CN112768348B (zh) | 2021-01-18 | 2021-01-18 | 一种铌酸锂材料刻蚀及提高侧壁角度的优化方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110059078.0A CN112768348B (zh) | 2021-01-18 | 2021-01-18 | 一种铌酸锂材料刻蚀及提高侧壁角度的优化方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112768348A CN112768348A (zh) | 2021-05-07 |
CN112768348B true CN112768348B (zh) | 2022-05-20 |
Family
ID=75702320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110059078.0A Active CN112768348B (zh) | 2021-01-18 | 2021-01-18 | 一种铌酸锂材料刻蚀及提高侧壁角度的优化方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112768348B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113687466B (zh) * | 2021-08-03 | 2022-09-16 | 上海交通大学 | 基于金属硬掩模的铌酸锂薄膜光子芯片及其加工方法 |
CN114924341B (zh) * | 2022-05-06 | 2023-06-06 | 上海交通大学 | 提高fib刻蚀超浅光栅结构侧壁垂直度的方法及*** |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5106471A (en) * | 1990-04-02 | 1992-04-21 | Motorola, Inc. | Reactive ion etch process for surface acoustic wave (SAW) device fabrication |
WO1996008036A1 (en) * | 1994-09-02 | 1996-03-14 | Stichting Voor De Technische Wetenschappen | Process for producing micromechanical structures by means of reactive ion etching |
JP2006165228A (ja) * | 2004-12-07 | 2006-06-22 | Toyama Prefecture | プラズマエッチング方法 |
CN102304767A (zh) * | 2011-08-25 | 2012-01-04 | 中国科学院半导体研究所 | 一种制备铌酸锂表面图形的方法 |
CN105048103A (zh) * | 2015-06-25 | 2015-11-11 | 电子科技大学 | 一种用于吸收太赫兹波的超薄金属膜的制备方法 |
CN111061072A (zh) * | 2020-03-16 | 2020-04-24 | 南京南智先进光电集成技术研究院有限公司 | 一种基于铌酸锂薄膜的光电器件及其制备方法 |
CN112125276A (zh) * | 2020-09-14 | 2020-12-25 | 中北大学 | 一种力学传感器用铌酸锂单晶薄膜图形化刻蚀方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106521633B (zh) * | 2016-12-26 | 2019-12-13 | 福建晶安光电有限公司 | 一种钽酸锂晶体基片的黑化处理方法 |
-
2021
- 2021-01-18 CN CN202110059078.0A patent/CN112768348B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5106471A (en) * | 1990-04-02 | 1992-04-21 | Motorola, Inc. | Reactive ion etch process for surface acoustic wave (SAW) device fabrication |
WO1996008036A1 (en) * | 1994-09-02 | 1996-03-14 | Stichting Voor De Technische Wetenschappen | Process for producing micromechanical structures by means of reactive ion etching |
JP2006165228A (ja) * | 2004-12-07 | 2006-06-22 | Toyama Prefecture | プラズマエッチング方法 |
CN102304767A (zh) * | 2011-08-25 | 2012-01-04 | 中国科学院半导体研究所 | 一种制备铌酸锂表面图形的方法 |
CN105048103A (zh) * | 2015-06-25 | 2015-11-11 | 电子科技大学 | 一种用于吸收太赫兹波的超薄金属膜的制备方法 |
CN111061072A (zh) * | 2020-03-16 | 2020-04-24 | 南京南智先进光电集成技术研究院有限公司 | 一种基于铌酸锂薄膜的光电器件及其制备方法 |
CN112125276A (zh) * | 2020-09-14 | 2020-12-25 | 中北大学 | 一种力学传感器用铌酸锂单晶薄膜图形化刻蚀方法 |
Also Published As
Publication number | Publication date |
---|---|
CN112768348A (zh) | 2021-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN112768348B (zh) | 一种铌酸锂材料刻蚀及提高侧壁角度的优化方法 | |
TWI716046B (zh) | 一種磁性穿隧接面蝕刻方法 | |
US5177031A (en) | Method of passivating etched mirror facets of semiconductor laser diodes | |
CN103114323B (zh) | 一种用于GaN单晶衬底的表面抛光方法 | |
CN112125276A (zh) | 一种力学传感器用铌酸锂单晶薄膜图形化刻蚀方法 | |
TWI719642B (zh) | 磁隧道結刻蝕方法 | |
CN103084353A (zh) | 铝质等离子体室部件的清洁方法 | |
CN103137440B (zh) | 光刻胶移除方法 | |
TWI631080B (zh) | 鎳鈷硫化物合成方法及其電極 | |
TWI499103B (zh) | 磁電阻式隨機存取記憶體裝置及其製造方法 | |
CN103594302B (zh) | 一种GaAs纳米线阵列光电阴极及其制备方法 | |
US20170155044A1 (en) | Nonvolatile resistance random access memory device with low and reliable operating voltage and long-term stability and fabrication method thereof | |
JPH08253881A (ja) | ドライエッチング方法 | |
CN113496949B (zh) | 一种改善栅极结构表面形成金属硅化层后漏电现象的方法 | |
JP3572066B2 (ja) | カンチレバー型近接場探針構造体及びその作製方法 | |
JP4560652B2 (ja) | アンチリフレクション層を具える基板及びその製作方法 | |
CN112310214A (zh) | 一种非易失性铁电存储器及其制备方法 | |
CN113215574B (zh) | 一种用于蓝宝石基底镀铝膜的量子芯片的湿法刻蚀方法 | |
US9966134B1 (en) | Non-volatile resistive random-access memory device with reliable operation indicator, device-to-device uniformity, and multilevel cell storage, and method of manufacturing the same | |
CN107546284A (zh) | 一种倒楔形体陷光结构及其制备方法 | |
CN109037040A (zh) | 提高双大马士革刻蚀次沟槽工艺窗口的方法 | |
CN102054780A (zh) | 提高非易失性存储器性能的方法 | |
CN114717639B (zh) | 基于光电化学腐蚀工艺定位氧化镓晶片表面缺陷的方法 | |
CN112397382B (zh) | 一种多晶硅薄膜的处理方法 | |
US20240093345A1 (en) | Fixed point defect doping method for micro-nanostructure, and nv center sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |