CN112763881B

CN112763881B - Avalanche test parameter selection method, avalanche test parameter selection device, computer equipment and storage medium

Info

Publication number: CN112763881B
Application number: CN202011548035.0A
Authority: CN
Inventors: 明志茂; 江雪晨; 陆裕东; 李汝冠; 岳龙; 赵可沦
Original assignee: Grg Metrology & Test Hunan Co ltd
Current assignee: Grg Metrology & Test Hunan Co ltd
Priority date: 2020-12-23
Filing date: 2020-12-23
Publication date: 2024-05-14
Anticipated expiration: 2040-12-23
Also published as: CN112763881A

Abstract

The application relates to an avalanche test parameter selection method, an avalanche test parameter selection device, computer equipment and a storage medium, which can acquire and analyze a test environment parameter and a related setting parameter of a repetitive avalanche tolerance circuit when the repetitive avalanche tolerance test is carried out on a device to be tested, so as to obtain a junction temperature parameter of the device to be tested under the current setting parameter. And comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to a comparison and analysis result, namely outputting corresponding information with reasonable set parameter or prompting information for adjusting the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche resistance parameters in the repeated avalanche resistance testing operation, so that the set parameters selected by the user can meet the repeated avalanche resistance testing requirement of the device to be tested, and the accuracy of the repeated avalanche resistance testing result can be further ensured.

Description

Avalanche test parameter selection method, avalanche test parameter selection device, computer equipment and storage medium

Technical Field

The present application relates to the field of reliability testing technologies, and in particular, to a method and apparatus for selecting avalanche test parameters, a computer device, and a storage medium.

Background

With the development of the third generation semiconductor technology, silicon carbide MOSFET devices and diodes are increasingly used in special environments such as high-frequency switches and automobile electronics due to the advantages of high frequency, low power consumption, higher power density, lower system cost and the like. These devices, when driving an inductive load, are subject to energy spikes from the non-clamped inductive switch (Unclamped Inductive Switching, UIS). The switching process under non-clamp inductive loads is generally considered to be the most extreme stress situation that MOSFET devices and diode devices can suffer in system applications, because the energy stored in the inductor at loop turn-on must be released entirely by the device under test at turn-off instants, while the high voltages and currents applied to the device under test are extremely prone to device failure, and the damage caused by such failure is often irreparable. Avalanche resistance is therefore often an important indicator of the reliability of silicon carbide devices under test.

The avalanche resistance test is to simulate the process of generating avalanche when the device is practically turned off according to the set voltage, current and inductance conditions, and to see whether the tested device is damaged or not, and the device which cannot bear the set energy is an unqualified product. The avalanche resistance test comprises a single pulse avalanche resistance test and a repeated pulse avalanche resistance test, wherein the measurement conditions of the single pulse avalanche resistance test equipment comprise inductance, a single avalanche current value and power supply voltage in the avalanche process, and compared with the single pulse test, the measurement conditions of the repeated pulse further comprise parameters such as junction temperature, avalanche pulse width, frequency and the like.

Although the specification table for silicon carbide MOSFETs lists the values of the repeated avalanche current and the repeated avalanche energy, along with the measurement conditions, there are typically only the onset temperature of 25 c, the maximum junction temperature of 150 c or 175 c, and the inductance value. To completely evaluate the repeated avalanche capability of the device under test, the related parameters also include steady-state thermal resistance (junction-shell thermal resistance or junction-ring thermal resistance), duty cycle of working pulse, working frequency, duty cycle of avalanche pulse (or avalanche pulse width is directly given), power supply voltage, transient thermal resistance curve and resistive load value, and the selection of these test parameters is different, so that the influence on the repeated avalanche resistance test result is very large. In the actual repeated avalanche resistance testing process, the accuracy of the repeated avalanche resistance testing result is seriously affected due to unreasonable parameter selection, and the conventional repeated avalanche resistance testing operation has the defect of poor testing reliability.

Disclosure of Invention

Based on this, it is necessary to provide an avalanche test parameter selection method, an avalanche test parameter selection device, a computer device and a storage medium for solving the problem of poor test reliability of the conventional repeated avalanche resistance test operation.

An avalanche test parameter selection method comprises the following steps: acquiring a test environment parameter and a set parameter of a repeated avalanche resistance test circuit; obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold; and outputting information with reasonable setting parameters or prompt information for adjusting the setting parameters according to the comparison analysis result.

An avalanche test parameter selection device, comprising: the set parameter acquisition module is used for acquiring the set parameters of the test environment parameters and the repeated avalanche resistance test circuit; the junction temperature parameter analysis module is used for obtaining the junction temperature parameter of the device to be tested under the current set parameter according to the test environment parameter and the set parameter, and comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value; and the selection result prompting module is used for outputting reasonable information of the setting parameters or prompting information for adjusting the setting parameters according to the comparison analysis result.

A computer device comprising a memory storing a computer program and a processor implementing the steps of the method described above when the processor executes the computer program.

A computer readable storage medium having stored thereon a computer program, characterized in that the computer program when executed by a processor realizes the steps of the above method.

According to the avalanche test parameter selection method, the avalanche test parameter selection device, the computer equipment and the storage medium, when the repeated avalanche tolerance test is carried out on the device to be tested, the test parameters and the relevant set parameters of the repeated avalanche tolerance circuit can be obtained and analyzed, and the junction temperature parameters of the device to be tested under the current set parameters are obtained. And comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to a comparison and analysis result, namely outputting corresponding information with reasonable set parameter or prompting information for adjusting the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche resistance parameters in the repeated avalanche resistance testing operation, so that the set parameters selected by the user can meet the repeated avalanche resistance testing requirement of the device to be tested, and the accuracy of the repeated avalanche resistance testing result can be further ensured.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments or the conventional techniques of the present application, the drawings required for the descriptions of the embodiments or the conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.

FIG. 1 is a flow chart of a method for selecting parameters for a metrorrhagia test in an embodiment;

FIG. 2 is a schematic diagram of a repeating avalanche resistance test circuit in accordance with one embodiment;

FIG. 3 is a flowchart of another embodiment of a method for selecting parameters for a metrorrhagia test;

FIG. 4 is a flowchart of a method for selecting parameters for a metrorrhagia test in another embodiment;

FIG. 5 is a schematic diagram of a junction temperature peak analysis flow in an embodiment;

FIG. 6 is a schematic diagram of a repeating avalanche waveform in one embodiment;

FIG. 7 is a schematic diagram of a junction temperature peak analysis flow in another embodiment;

FIG. 8 is a schematic diagram of a repeating avalanche waveform in another embodiment;

FIG. 9 is a schematic diagram of a snow burst test parameter selection device according to an embodiment;

FIG. 10 is a schematic diagram of an internal structure of a computer device according to an embodiment.

Detailed Description

In order that the application may be readily understood, a more complete description of the application will be rendered by reference to the appended drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Referring to fig. 1, an avalanche test parameter selecting method includes steps S100, S200, and S300.

Step S100, obtaining the test environment parameters and the set parameters of the repeated avalanche resistance test circuit.

Specifically, when a user has a need to perform a repeated avalanche resistance test, the user first inputs setting parameters related to the repeated avalanche resistance test circuit to a control device or a processor executing the method for selecting the avalanche test parameters in this embodiment, and at the same time, collects test environment parameters through a corresponding collection device. The repeated avalanche tolerance test is a scheme for simulating the energy peak of the device to be tested, which is born by the non-clamping inductive switch, and detecting and verifying the operation reliability of the device to be tested under the extreme stress condition.

The type of the repeated avalanche resistance test circuit is not the only type, and the repeated avalanche resistance test circuit can be used for testing by simulating the extreme operating environment of the device to be tested by breaking down the device to be tested if a high voltage can be generated. For example, in one embodiment, a schematic diagram of the repetitive avalanche resistance test circuit is shown in fig. 2, where a control terminal of a DUT is used to input a pulse signal VGS for controlling on/off of the DUT, a first terminal of the DUT is connected to one terminal of an adjustable inductor L, another terminal of the adjustable inductor L is connected to one terminal of an adjustable load RL, another terminal of the adjustable load RL is connected to one terminal of a capacitor C and a power supply VDD, and another terminal of the capacitor C is connected to the power supply VDD and a second terminal of the DUT. When the pulse signal VGS input to the DUT controls the DUT to be turned off, the current on the adjustable inductance L cannot be suddenly changed, an induced electromotive force is generated on the adjustable inductance L, and after the induced voltage is applied to the DUT, the DUT is broken down.

It should be noted that the type of setting parameter is not unique, and in one embodiment, the setting parameter includes at least one of a supply voltage value, an inductance value (i.e., an inductance size of the adjustable inductance), a load resistance value (i.e., a resistance size of the adjustable load), an operating pulse duty cycle (i.e., a pulse signal input to the device under test), an operating frequency, a device under test on resistance value, and a device under test breakdown voltage value of the repeated avalanche resistance test circuit. In a more detailed embodiment, the set parameters include a supply voltage value, an inductance value, a load resistance value, an operating pulse duty cycle, an operating frequency, a device under test on-resistance value, and a device under test breakdown voltage value of the repeated avalanche resistance test circuit.

Step S200, obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold.

In particular, a key point in repeating the avalanche resistance test is how to ensure that the junction temperature parameter is within a specified range during continuous avalanche. Therefore, in this embodiment, after the set parameters and the test environment parameters are obtained, analysis and calculation are performed according to the current set parameters and the test environment parameters to obtain junction temperature parameters that can be reached by the device to be tested under the current set parameters, and then the junction temperature parameters are compared with the preset junction temperature threshold value for analysis, so as to determine whether the junction temperature that can be reached under the current set parameters exceeds the preset junction temperature threshold value.

It should be noted that the type of device under test is not the only type and may be a power device such as a transistor or a metal-oxide-semiconductor field effect transistor, and further, in one embodiment, the device under test may be a silicon carbide metal-oxide-semiconductor field effect transistor (SiC MOSFET).

And step S300, outputting reasonable information of the setting parameters or prompt information for adjusting the setting parameters according to the comparison analysis result.

Specifically, the set parameter is reasonable, that is, the junction temperature parameter does not exceed the preset junction temperature threshold, and the information for adjusting the set parameter needs to be output, that is, the junction temperature parameter exceeds the allowed preset junction temperature threshold. After comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, according to different comparison and analysis results, guiding a user to adjust the setting parameter under the condition that the setting parameter is unreasonable, so that the parameter finally used for repeating the avalanche tolerance test meets the test requirement, the junction temperature parameter is always within the preset junction temperature threshold value in the test process, and the accuracy of the avalanche test result is ensured.

In one embodiment, after step S300, further includes: when receiving the start test information, the control pulse generating device sends continuous pulses to the device to be tested so as to control the device to be tested to be turned on or turned off.

Specifically, after the analysis of whether the set parameters meet the test requirements is performed by combining the set parameters input by the user with the set parameters acquired and transmitted by other acquisition devices, when the start test information is received, the pulse generating device is controlled to generate continuous pulses to repeatedly control the on or off of the device to be tested, and under the condition that the device to be tested is disconnected, the repeated avalanche resistance test circuit generates induced electromotive force to be applied to the device to be tested, so that the device to be tested breaks down finally, and the repeated avalanche resistance test is completed.

It should be noted that the specific case of receiving the start test information is not unique. In one embodiment, the analysis may be performed when the test parameters are reasonable, that is, the default is that the start test information is received, and then the repeated avalanche pulse test is directly started. In another embodiment, the information that the setting parameters are reasonable is output when the setting parameters are analyzed to meet the test requirement, in which case the user sends a confirmation instruction or an open instruction, and when the confirmation instruction or the open instruction is received, the start test information is received. In other embodiments, after outputting the prompt information for adjusting the setting parameters, the user still sends a confirmation instruction or an on instruction to the control device 100, which also indicates that the control device 100 receives the start test information.

It can be understood that in one embodiment, if the user adjusts the setting parameters after receiving the prompt information for adjusting the setting parameters, the user also re-combines the adjusted setting parameters with the test environment parameters according to the adjusted setting parameters, and re-performs the reasonable analysis and judgment of the setting parameters until the user sends a confirmation instruction to the control device or the setting parameters are adjusted to meet the test requirements

Referring to fig. 3, in one embodiment, the junction temperature parameter includes a peak junction temperature, and step S300 includes step S310 and step S320.

Step S310, outputting information with reasonable setting parameters when the peak junction temperature is smaller than a preset junction temperature threshold value; step S320, when the peak junction temperature is greater than or equal to the preset junction temperature threshold, a prompt message for adjusting the setting parameters is output.

Specifically, the peak junction temperature is the maximum value that the junction temperature of the device to be tested can reach. In this embodiment, after the peak junction temperature is obtained through calculation, the peak junction temperature is compared with a preset junction temperature threshold value, and whether the peak junction temperature is smaller than the preset junction temperature threshold value is determined. If so, the peak junction temperature is within the allowed junction temperature threshold, the junction temperature of the device to be tested does not exceed the preset junction temperature threshold under the current set parameters, the set parameters are reasonable at this time, the requirement of repeated avalanche resistance test can be met, and the inaccurate repeated avalanche resistance test result is not caused. If not, the peak junction temperature which can be achieved by the device to be tested is too high, and if the avalanche resistance test is repeated by the set parameter, the junction temperature of the device to be tested is possibly beyond the preset junction temperature, so that the measurement result is inaccurate. Therefore, when the peak junction temperature is greater than or equal to the preset junction temperature threshold, a prompt message for adjusting the setting parameters is output to inform the user, so that the user can select whether to adjust the setting parameters according to actual requirements, for example, adjusting the power supply voltage value or the inductance value in the setting parameters.

It should be noted that in one embodiment, the junction temperature parameter further includes an average junction temperature, and the corresponding comparison analysis of the junction temperature parameter with the preset junction temperature threshold includes a comparison analysis of the average junction temperature with a preset junction temperature threshold corresponding to the average junction temperature, and a comparison analysis of the peak junction temperature with a preset junction temperature threshold corresponding to the peak junction temperature. When the average junction temperature and the peak junction temperature are smaller than the corresponding preset junction temperature threshold values, the parameter setting is reasonable, the information with reasonable setting parameters is output, otherwise, the setting parameters are not reasonable, and prompt information for adjusting the setting parameters is output.

Referring to fig. 4, in one embodiment, the junction temperature parameter includes a peak junction temperature, and the step of obtaining the junction temperature parameter of the device under test under the current setting parameter according to the setting parameter includes step S210 and step S220.

Step S210, when the load resistance value of the repeated avalanche resistance testing circuit is not zero, analyzing according to the testing environment parameter and the power supply voltage value, the inductance value, the load resistance value, the duty cycle of working pulse, the working frequency, the on-resistance value of the device to be tested and the breakdown voltage value of the device to be tested, so as to obtain the peak junction temperature of the device to be tested; and step S220, when the load resistance value of the repeated avalanche resistance testing circuit is zero, analyzing according to the testing environment parameter and the power supply voltage value, the inductance value, the duty cycle of the working pulse, the working frequency and the breakdown voltage value of the device to be tested of the repeated avalanche resistance testing circuit to obtain the peak junction temperature of the device to be tested.

Specifically, when the repeated avalanche resistance test is performed, the magnitude of the resistance of the load resistor is adjustable, so that the analysis mode of the corresponding peak junction temperature is not uniform with respect to whether the resistance of the load resistor is zero. In the embodiment, two repeated avalanche pulse test implementation schemes of zero load resistance and non-zero load resistance are provided, when the load resistance is not zero, the load resistance, the power supply voltage value, the inductance value, the duty cycle of the working pulse, the working frequency, the on-resistance value of the device to be tested and the breakdown voltage value of the device to be tested are required to be combined for analysis, so that the corresponding peak junction temperature is obtained, and when the load resistance is zero, the power supply voltage value, the inductance value, the duty cycle of the working pulse, the working frequency and the breakdown voltage value of the device to be tested of the repeated avalanche resistance test circuit are only required to be combined for analysis, so that the final peak junction temperature can be obtained.

It will be appreciated that the specific manner of performing the peak junction temperature analysis is not unique in the case where the load resistance is not zero, and in one embodiment, please refer to fig. 5 in combination, the steps of obtaining the peak junction temperature of the device under test according to the test environment parameter and the repeated power supply voltage value, inductance value, load resistance value, duty cycle of operating pulse, operating frequency, on-resistance value of the device under test and breakdown voltage value of the device under test, include steps S211-S219.

Step S211, analyzing according to the power supply voltage value, the load resistance value and the on-resistance value of the device to be tested of the repeated avalanche resistance test circuit to obtain an avalanche current value; step S212, analyzing according to the avalanche current value, the load resistance value, the power supply voltage, the inductance value of the repeated avalanche resistance measuring circuit and the breakdown voltage value of the device to be measured to obtain an avalanche pulse width; step S213, analyzing according to the avalanche current value, the avalanche pulse width and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; step S214, analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; step S215, analyzing according to the repeated avalanche energy value and the working frequency of the repeated avalanche resistance testing circuit to obtain average avalanche power; step S216, analyzing according to the duty cycle of the working pulse of the repeated avalanche resistance testing circuit, the avalanche current value and the on-resistance value of the device to be tested to obtain average on-power; step S217, analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain an average junction temperature; step S218, analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; step S219, obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.

Specifically, referring to fig. 6 in combination, a schematic diagram of the repetitive avalanche resistance testing circuit shown in fig. 2 is combined, in which VGS is a pulse signal, IAR is an avalanche current, and VDS is a sampling voltage signal between the adjustable inductance L and one end of the DUT in fig. 2. Defining a boundary condition (t=0, i (t) =il=iar), where t=0 is the first pulse end time of the avalanche current value IAR shown in fig. 6, and the relation between the current and the related parameter in the process of obtaining the repeated avalanche resistance is as follows:

Where I (t) represents a current at time t, t represents time, I _AR represents an avalanche current value, R _L represents a load resistance value, L represents an inductance value, V _DD represents a power supply voltage value, and V _AV represents an avalanche voltage. Typically, the avalanche voltage That is, the avalanche voltage is usually about 1.3 times the breakdown voltage BVDSS, and in practical evaluation, the breakdown voltage BVDSS may be 1.3 times to 1.5 times. In another embodiment, to ensure accuracy of the evaluation, the specific size of V _AV can also be measured by a single avalanche.

Knowing the avalanche pulsewidth (t _av) time, the current drops to 0, the avalanche pulsewidth t _av expression can be derived:

Wherein t _av denotes a pulse width, I _AR denotes an avalanche current value, R _L denotes a load resistance value, L denotes an inductance value, V _DD denotes a supply voltage value, and V _AV denotes an avalanche voltage. In the conventional avalanche resistance test, the avalanche pulse width cannot be set, but if the avalanche resistance test needs to be repeated, the corresponding avalanche pulse width needs to be set, so by the scheme of the embodiment, a relational expression of the avalanche pulse width t _av and other parameters is given, and the setting of the parameters becomes possible.

It should be noted that, the calculation manner of the avalanche current value I _AR is not unique, and in this embodiment, since the resistance value of the load resistor is not zero, the power supply voltage value, the load resistance value and the on-resistance value of the device to be tested of the repeated avalanche resistance test circuit can be combined for analysis, so as to obtain the avalanche current value. Further, in a more detailed embodiment, the avalanche current value I _AR is analyzed as follows:

Wherein I _AR denotes an avalanche current value, R _L denotes a load resistance value, V _DD denotes a power supply voltage value, R _DS(_on) denotes an on-resistance value of the device under test.

Further, after the avalanche current value and the avalanche pulse width are obtained by analysis and calculation, the avalanche current value, the avalanche pulse width and the avalanche voltage (for the sake of understanding the various embodiments of the present application, the breakdown voltage BVDSS is equal to 1.3 times of the avalanche voltage) may be further combined for analysis and calculation, so as to obtain the repeated avalanche energy value. In a more detailed embodiment, the repeat avalanche energy value is calculated as follows:

Where E _AR denotes a repetition avalanche energy value, I _AR denotes an avalanche current value, t _av denotes a pulse width, V _AV denotes an avalanche voltage, and x denotes a multiplication.

After the avalanche energy value is obtained, the avalanche power and the average avalanche power are further calculated in combination with the avalanche energy value, and in a more detailed embodiment, the avalanche power and the average avalanche power are calculated as follows:

P_ave＝E_AR*f

wherein, P _AV represents avalanche power, P _ave represents average avalanche power, E _AR represents repetitive avalanche energy value, t _av represents pulse width, f represents operating frequency of repetitive avalanche resistance testing circuit, and x represents multiplication.

In one embodiment, the duty cycle of the working pulse, the avalanche current value and the on-resistance value of the device to be tested of the repeated avalanche resistance test circuit can be combined for analysis, and the average on-power is calculated as follows:

P_cond＝I_L ²*R_DS(on)*D

Wherein, P _cond represents average on power, I _L represents current value flowing through the adjustable inductor, the magnitude of the current value is consistent with that of the avalanche current value I _AR, and D represents duty ratio of working pulse of the repeated avalanche resistance test circuit, that is, duty ratio of pulse signal input to control end of the device to be tested.

When the repeated avalanche tolerance test is carried out and pulse signals are repeatedly input to the control end of the device to be tested for on-off control, the junction temperature of the device to be tested is increased by an average value, and the average value is based on average power consumption and is accompanied with the peak temperature of each pulse. Therefore, in this embodiment, after the average avalanche power, the average conduction power and the test environmental parameter are combined to perform analysis and calculation, the avalanche power and the test environmental parameter are required to be combined to perform analysis and calculation to obtain the junction temperature variation, and finally, the corresponding peak junction temperature can be obtained according to the average junction temperature and the temperature variation. In a more detailed embodiment, the peak junction temperature is calculated as follows:

T_MAX＝T_j-ave+ΔT

Wherein T _MAX represents the peak junction temperature, T _j-ave represents the average junction temperature, and Δt represents the junction temperature variation.

It should be noted that in the actual analysis operation, the test environment parameter may be measured by other devices and finally sent to the control device or the processor executing the method for selecting the snow collapse test parameter in the present application, and finally, the analysis calculation is performed, so as to obtain the peak junction temperature corresponding to the high peak junction temperature. The specific type of test environment parameter is not unique, and in one embodiment, the test environment parameter includes a steady state thermal resistance of the device under test, a transient thermal resistance, an ambient temperature of the environment in which the device under test is located, or a case temperature of the device under test, etc.

It will be appreciated that the manner in which the peak junction temperature analysis calculation is performed in conjunction with the test environment parameters is not exclusive, and in one embodiment, the test environment parameters include an environment temperature, a steady state junction loop thermal resistance value and a transient junction loop thermal resistance value of the device under test, and step S217 includes: analyzing according to the average avalanche power, the average conduction power, the ambient temperature and the steady-state junction loop thermal resistance value to obtain an average junction temperature; the corresponding step S218 includes: and analyzing according to the avalanche power and the transient junction loop thermal resistance value to obtain the junction temperature variation.

Specifically, in this embodiment, the average junction temperature is calculated by using the ambient temperature, and the steady-state thermal resistance of the corresponding device to be tested uses the steady-state junction loop thermal resistance, and the transient thermal resistance uses the transient junction loop thermal resistance. The specific calculation mode of the average junction temperature is as follows:

T_j-ave＝(P_ave+P_cond)R_ja+T_a

Wherein T _j-ave represents an average junction temperature, R _ja represents a steady-state junction loop thermal resistance value, P _ave represents an average avalanche power, P _cond represents an average on power, and T _a represents an ambient temperature. The steady-state junction thermal resistance R _ja and the ambient temperature T _a can be measured by other devices and then sent to a control device or a processor for executing the method for selecting the parameters of the snow collapse test.

Further, the junction temperature variation is calculated as follows: Δt=p _AVZ_ja, where Δt represents the amount of change in temperature, P _AV represents avalanche power, and Z _ja represents the transient loop resistance. Z _ja is the transient junction ring thermal resistance value under the pulse width of t _av, specifically, after the thermal impedance measurement is carried out by the measuring equipment, a transient thermal resistance curve is deduced, and the corresponding transient junction ring thermal resistance value is selected according to t _av.

In another embodiment, the test environment parameters include an average case temperature, a steady state case thermal resistance value and a transient case thermal resistance value of the device under test, and step S217 includes: analyzing according to the average avalanche power, the average conduction power and the average shell temperature and steady-state shell thermal resistance value to obtain the average junction temperature; step S218 includes: and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain the junction temperature variation.

Specifically, in this embodiment, the temperature of the housing of the device to be tested (i.e., the average housing temperature) is used to calculate the average junction temperature, and the steady-state thermal resistance of the corresponding device to be tested uses the steady-state housing thermal resistance, and the transient thermal resistance uses the transient housing thermal resistance. The specific calculation mode of the average junction temperature is as follows:

T_j-ave＝(P_ave+P_cond)R_jc+T_c

Wherein T _j-ave represents an average junction temperature, R _jc represents a steady-state crusting thermal resistance value, P _ave represents an average avalanche power, P _cond represents an average on power, and T _c represents an average crusting temperature. The steady state crusting thermal resistance value R _jc and the average shell temperature T _c can be measured by other devices and then sent to a control device or a processor for executing the method for selecting the parameters of the snow collapse test.

Further, the junction temperature variation is calculated as follows: Δt=p _AVZ_jc, where Δt represents the amount of change in temperature, P _AV represents avalanche power, and Z _jc represents the transient crusting thermal resistance. Z _jc is a transient crusting thermal resistance value under the pulse width of t _av, specifically, a transient thermal resistance curve is deduced after thermal impedance measurement is carried out by measuring equipment, and a corresponding transient crusting thermal resistance value is selected according to t _av.

Referring to fig. 7 in combination, in one embodiment, the steps of obtaining the peak junction temperature of the device under test according to the test environment parameter and the power supply voltage value, the inductance value, the load resistance value, the duty cycle of the working pulse, the working frequency, the on-resistance value of the device under test and the breakdown voltage value of the device under test of the repeated avalanche tolerance test circuit are performed, and the steps include step S221-step S228.

Step S221, analyzing according to the power supply voltage value, the inductance value, the duty ratio of the working pulse and the working frequency of the repeated avalanche resistance test circuit to obtain an avalanche current value; step S222, analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width; step S223, analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; step S224, analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; step S225, analyzing according to the repeated avalanche energy value and the working frequency to obtain average avalanche power; step S226, analyzing according to the average avalanche power and the test environment parameters to obtain an average junction temperature; step S227, analyzing according to the avalanche power and the test environment parameters to obtain the junction temperature variation; and S228, obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.

Specifically, please refer to fig. 8 in combination, wherein VGS is a pulse signal, IAR is an avalanche current, and VDS is a sampled voltage signal between the adjustable inductance L and one end of the DUT in fig. 2. Knowing the avalanche pulse width (t _av) instant, the current drops to 0, deriving the avalanche pulse width t _av expression as:

Wherein t _av denotes an avalanche pulse width, I _AR denotes an avalanche current value, L denotes an inductance value, V _DD denotes a supply voltage value, and V _AV denotes an avalanche voltage. Typically, the avalanche voltage That is, the avalanche voltage is usually about 1.3 times the breakdown voltage BVDSS, and in practical evaluation, the breakdown voltage BVDSS may be 1.3 times to 1.5 times. In another embodiment, to ensure accuracy of the evaluation, the specific size of V _AV can also be measured by a single avalanche. In the conventional avalanche resistance test, the avalanche pulse width cannot be set, but if the avalanche resistance test needs to be repeated, the corresponding avalanche pulse width needs to be set, so by the scheme of the embodiment, a relational expression of the avalanche pulse width t _av and other parameters is given, and the setting of the parameters becomes possible.

It should be noted that the calculation manner of the avalanche current value I _AR is not unique, and in this embodiment, since the resistance value of the load resistor is zero, the power supply voltage value, the inductance value, the duty ratio of the operating pulse and the operating frequency of the repeated avalanche resistance test circuit can be combined to perform analysis and calculation to obtain the corresponding avalanche current value. In a more detailed embodiment, the avalanche current value can be analytically calculated by:

Wherein I _AR represents an avalanche current value, L represents an inductance value, V _DD represents a supply voltage value, D represents a duty ratio of an operating pulse of the repetitive avalanche resistance testing circuit, that is, a duty ratio of a pulse signal input to a control terminal of a device to be tested, f represents an operating frequency of the repetitive avalanche resistance testing circuit, and x represents multiplication.

Further, after the avalanche current value and the avalanche pulse width are obtained by analysis and calculation, the avalanche current value, the inductance value, the supply voltage and the avalanche voltage (for the sake of understanding the embodiments of the present application, the breakdown voltage BVDSS is equal to 1.3 times of the avalanche voltage) may be further combined for analysis and calculation, so as to obtain the repeated avalanche energy value. In a more detailed embodiment, the repeat avalanche energy value is calculated as follows:

P_ave＝E_AR*f

T_MAX＝T_j-ave+ΔT

In one embodiment, the test environment parameters include an environment temperature, a steady state junction loop thermal resistance value and a transient junction loop thermal resistance value of the device under test, and step S226 includes: and analyzing according to the average avalanche power, the ambient temperature and the steady-state junction ring thermal resistance value to obtain the average junction temperature. Step S227 includes: and analyzing according to the avalanche power and the transient junction loop thermal resistance value to obtain the junction temperature variation.

T_j-ave＝P_aveR_ja+T_a

Where T _j-ave represents the average junction temperature, R _ja represents the steady state junction loop thermal resistance, P _ave represents the average avalanche power, and T _a represents the ambient temperature. The steady-state junction thermal resistance R _ja and the ambient temperature T _a can be measured by other devices and then sent to a control device or a processor for executing the method for selecting the parameters of the snow collapse test.

In another embodiment, the test environment parameters include an average case temperature, a steady state case thermal resistance value and a transient case thermal resistance value of the device under test, and step S226 includes: and analyzing according to the average avalanche power, the average shell temperature and the steady-state shell thermal resistance value to obtain the average junction temperature. Step S227 includes: and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain the junction temperature variation.

T_j-ave＝P_aveR_jc+T_c

Wherein T _j-ave represents the average junction temperature, R _jc represents the steady state crusting thermal resistance value, P _ave represents the average avalanche power, and T _c represents the average crusting temperature. The steady state crusting thermal resistance value R _jc and the average shell temperature T _c can be measured by other devices and then sent to a control device or a processor for executing the method for selecting the parameters of the snow collapse test.

In order to facilitate an understanding of the various embodiments of the application, the application is explained below in connection with the detailed embodiments. In a more detailed embodiment, the load resistance value is zero, T _jmax＝150℃,R_ja = 0.2 ℃/W, BVDSS = 100V, the device under test control end pulse frequency f = 100kHz, the duty cycle D = 0.5, the ambient temperature T _a = 25 ℃, the inductance value L = 10 μh, the supply voltage V _DD = 50V, and it is verified whether the above repeated avalanche resistance test parameters meet the highest junction temperature limit.

According toAnalysis and calculation gave I _AR =25a, V _AV =1.3 bvdss=130 (based on the measured values, here for the calculation of the approximation), I _AR is taken to be/>Solving for t _av v=3.125 μs; according toCalculate E _AR = 5.078mJ; substituting known parameters,/>And P _ave＝E_AR x f, solving for P _AV＝1625W,P_ave = 570.8W; from T _j-ave＝P_aveR_ja+T_a, the average junction temperature T _j-ave = 139.16 ℃ is calculated to be smaller than the set junction temperature threshold T _jmax, and further, the peak junction temperature T _MAX =175 ℃ can be calculated.

As can be seen from the above examples, the setting parameters selected by the user can ensure that the average junction temperature does not exceed the preset junction temperature threshold, but the peak junction temperature already exceeds the preset junction temperature threshold, and then a prompt message for adjusting and setting the parameters is output. At this time, the user can evaluate whether the test parameter selection is reasonable or not according to the actual situation, such as the severity of the test, whether the test parameter needs to be adjusted, if so, whether VDD and inductance L need to be adjusted, etc.

According to the avalanche test parameter selection method, when the repeated avalanche resistance test is carried out on the device to be tested, the test environment parameter and the related set parameters of the repeated avalanche resistance circuit can be obtained and analyzed, and the junction temperature parameter of the device to be tested under the current set parameters is obtained. And comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to a comparison and analysis result, namely outputting corresponding information with reasonable set parameter or prompting information for adjusting the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche resistance parameters in the repeated avalanche resistance testing operation, so that the set parameters selected by the user can meet the repeated avalanche resistance testing requirement of the device to be tested, and the accuracy of the repeated avalanche resistance testing result can be further ensured.

It should be understood that, although the steps in the flowcharts of fig. 1, 3-5, and 7 are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps of fig. 1, 3-5, 7 may include multiple sub-steps or phases that are not necessarily performed at the same time, but may be performed at different times, nor does the order in which the sub-steps or phases are performed necessarily occur sequentially, but may be performed alternately or alternately with at least some of the other steps or phases.

Referring to fig. 9, an avalanche test parameter selecting apparatus includes: the junction temperature analysis module 200 and the selection result prompting module 300 are connected with the setting parameter acquisition module 100.

The set parameter obtaining module 100 is configured to obtain a test environment parameter and a set parameter of the repeated avalanche resistance test circuit; the junction temperature parameter analysis module 200 is used for obtaining the junction temperature parameter of the device to be tested under the current set parameter according to the test environment parameter and the set parameter, and comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value; the selection result prompting module 300 is used for outputting information with reasonable setting parameters or prompting information for adjusting the setting parameters according to the comparison analysis result.

In one embodiment, the junction temperature parameter includes a peak junction temperature, and the selection result prompting module 300 is further configured to output information that the setting parameter is reasonable when the peak junction temperature is less than a preset junction temperature threshold; and when the peak junction temperature is greater than or equal to a preset junction temperature threshold value, outputting prompt information for adjusting the set parameters.

In one embodiment, the junction temperature parameter includes a peak junction temperature, and the junction temperature parameter analysis module 200 is further configured to analyze, when the load resistance value of the repeated avalanche resistance testing circuit is not zero, according to the testing environment parameter and the power supply voltage value, the inductance value, the load resistance value, the duty cycle of the working pulse, the working frequency, the on-resistance value of the device to be tested, and the breakdown voltage value of the device to be tested, to obtain a peak junction temperature of the device to be tested; when the load resistance value of the repeated avalanche resistance testing circuit is zero, analyzing according to the testing environment parameters, the power supply voltage value, the inductance value, the duty cycle of the working pulse, the working frequency and the breakdown voltage value of the device to be tested, and obtaining the peak junction temperature of the device to be tested.

In one embodiment, the junction temperature parameter analysis module 200 is further configured to analyze according to a supply voltage value, a load resistance value, and an on-resistance value of a device to be tested of the repeated avalanche resistance test circuit, to obtain an avalanche current value; analyzing according to the avalanche current value, the load resistance value, the power supply voltage, the inductance value of the repeated avalanche resistance testing circuit and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width; analyzing according to the avalanche current value, the avalanche pulse width and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency of the repeated avalanche resistance testing circuit to obtain average avalanche power; analyzing according to the duty ratio of the working pulse of the repeated avalanche resistance testing circuit, the avalanche current value and the on-resistance value of the device to be tested to obtain average on-power; analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain an average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.

In one embodiment, the test environmental parameters include an environmental temperature, a steady-state junction-ring thermal resistance value and a transient junction-ring thermal resistance value of the device to be tested, and the junction-temperature parameter analysis module 200 is further configured to analyze according to the average avalanche power, the average conduction power, the environmental temperature and the steady-state junction-ring thermal resistance value to obtain an average junction temperature; and analyzing according to the avalanche power and the transient junction loop thermal resistance value to obtain the junction temperature variation.

In one embodiment, the test environment parameters include an average junction temperature, a steady-state junction thermal resistance value and a transient junction thermal resistance value of the device to be tested, and the junction temperature parameter analysis module 200 is further configured to analyze according to the average avalanche power, the average conduction power, the average junction temperature and the steady-state junction thermal resistance value to obtain an average junction temperature; and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain the junction temperature variation.

In one embodiment, the junction temperature parameter analysis module 200 is further configured to analyze the power supply voltage value, the inductance value, the duty cycle of the working pulse, and the working frequency of the repeated avalanche resistance test circuit according to the test environmental parameter to obtain an avalanche current value; analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width; analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency to obtain average avalanche power; analyzing according to the average avalanche power and the test environment parameters to obtain an average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.

In one embodiment, the test environmental parameters include an environmental temperature, a steady-state junction-ring thermal resistance value and a transient junction-ring thermal resistance value of the device to be tested, and the junction-temperature parameter analysis module 200 is further configured to analyze according to the average avalanche power, the environmental temperature and the steady-state junction-ring thermal resistance value to obtain an average junction temperature; and analyzing according to the avalanche power and the transient junction loop thermal resistance value to obtain the junction temperature variation.

In one embodiment, the test environment parameters include an average junction temperature, a steady-state junction thermal resistance value and a transient junction thermal resistance value of the device under test, and the junction temperature parameter analysis module 200 is further configured to analyze according to the average avalanche power, the average junction temperature and the steady-state junction thermal resistance value to obtain an average junction temperature. And analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain the junction temperature variation.

For specific limitations of the avalanche test parameter selection device, reference may be made to the above limitations of the avalanche test parameter selection method, and no further description is given here. The above-mentioned avalanche test parameter selection device may be implemented in whole or in part by software, hardware, or a combination thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.

According to the avalanche test parameter selection device, when the repeated avalanche resistance test is carried out on the device to be tested, the test environment parameter and the related set parameters of the repeated avalanche resistance circuit can be obtained and analyzed, and the junction temperature parameter of the device to be tested under the current set parameters is obtained. And comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to a comparison and analysis result, namely outputting corresponding information with reasonable set parameter or prompting information for adjusting the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche resistance parameters in the repeated avalanche resistance testing operation, so that the set parameters selected by the user can meet the repeated avalanche resistance testing requirement of the device to be tested, and the accuracy of the repeated avalanche resistance testing result can be further ensured.

In one embodiment, a computer device is provided, which may be a server, and the internal structure of which may be as shown in fig. 10. The computer device includes a processor, a memory, a network interface, and a database connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, computer programs, and a database. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The database of the computer device is used for storing the setting parameters. The network interface of the computer device is used for communicating with an external terminal through a network connection. The computer program is executed by a processor to implement an avalanche test parameter selection method.

It will be appreciated by those skilled in the art that the structure shown in FIG. 10 is merely a block diagram of some of the structures associated with the present inventive arrangements and is not limiting of the computer device to which the present inventive arrangements may be applied, and that a particular computer device may include more or fewer components than shown, or may combine some of the components, or have a different arrangement of components.

In one embodiment, a computer device is provided comprising a memory and a processor, the memory having stored therein a computer program, the processor when executing the computer program performing the steps of: acquiring a test environment parameter and a set parameter of a repeated avalanche resistance test circuit; obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold value; and outputting information with reasonable setting parameters or prompt information for adjusting the setting parameters according to the comparison analysis result.

In one embodiment, the processor when executing the computer program further performs the steps of: when the load resistance value of the repeated avalanche resistance testing circuit is not zero, analyzing according to the testing environment parameters, the power supply voltage value, the inductance value, the load resistance value, the duty ratio of working pulse, the working frequency, the on-resistance value of the device to be tested and the breakdown voltage value of the device to be tested, and obtaining the peak junction temperature of the device to be tested; when the load resistance value of the repeated avalanche resistance testing circuit is zero, analyzing according to the testing environment parameters, the power supply voltage value, the inductance value, the duty cycle of the working pulse, the working frequency and the breakdown voltage value of the device to be tested, and obtaining the peak junction temperature of the device to be tested.

In one embodiment, the processor when executing the computer program further performs the steps of: analyzing according to the power supply voltage value, the load resistance value and the on-resistance value of the device to be tested of the repeated avalanche resistance test circuit to obtain an avalanche current value; analyzing according to the avalanche current value, the load resistance value, the power supply voltage, the inductance value of the repeated avalanche resistance testing circuit and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width; analyzing according to the avalanche current value, the avalanche pulse width and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency of the repeated avalanche resistance testing circuit to obtain average avalanche power; analyzing according to the duty ratio of the working pulse of the repeated avalanche resistance testing circuit, the avalanche current value and the on-resistance value of the device to be tested to obtain average on-power; analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain an average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.

In one embodiment, the processor when executing the computer program further performs the steps of: analyzing according to the average avalanche power, the average conduction power, the ambient temperature and the steady-state junction loop thermal resistance value to obtain an average junction temperature; and analyzing according to the avalanche power and the transient junction loop thermal resistance value to obtain the junction temperature variation.

In one embodiment, the processor when executing the computer program further performs the steps of: analyzing according to the average avalanche power, the average conduction power and the average shell temperature and steady-state shell thermal resistance value to obtain the average junction temperature; and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain the junction temperature variation.

In one embodiment, the processor when executing the computer program further performs the steps of: analyzing according to the power supply voltage value, the inductance value, the duty ratio of the working pulse and the working frequency of the repeated avalanche resistance testing circuit to obtain an avalanche current value; analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width; analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency to obtain average avalanche power; analyzing according to the average avalanche power and the test environment parameters to obtain an average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.

In one embodiment, the processor when executing the computer program further performs the steps of: analyzing according to the average avalanche power, the ambient temperature and the steady-state junction ring thermal resistance value to obtain an average junction temperature; and analyzing according to the avalanche power and the transient junction loop thermal resistance value to obtain the junction temperature variation.

In one embodiment, the processor when executing the computer program further performs the steps of: analyzing according to the average avalanche power and the average shell temperature and the steady-state shell thermal resistance value to obtain an average junction temperature; and analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain the junction temperature variation.

In one embodiment, a computer readable storage medium is provided, on which a computer program is stored, where the computer program when executed by a processor implements method steps consistent with a method performed by a processor of a computer device as described above, and is not described in detail herein.

Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided herein may include non-volatile and/or volatile memory. The nonvolatile memory can include Read Only Memory (ROM), programmable ROM (PROM), electrically Programmable ROM (EPROM), electrically Erasable Programmable ROM (EEPROM), or flash memory. Volatile memory can include Random Access Memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in a variety of forms such as Static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double Data Rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (SYNCHLINK) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), among others.

The computer equipment and the storage medium can acquire and analyze the relevant set parameters of the repeated avalanche resistance circuit when the repeated avalanche resistance test is carried out on the device to be tested, and obtain the junction temperature parameters of the device to be tested under the current set parameters. And comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value, and finally judging whether the set parameter is reasonable or not according to a comparison and analysis result, namely outputting corresponding information with reasonable set parameter or prompting information for adjusting the set parameter according to the comparison and analysis result. Through the scheme, the user can be guided to set the avalanche resistance parameters in the repeated avalanche resistance testing operation, so that the set parameters selected by the user can meet the repeated avalanche resistance testing requirement of the device to be tested, and the accuracy of the repeated avalanche resistance testing result can be further ensured.

The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the claims. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims

1. An avalanche test parameter selection method is characterized by comprising the following steps:

Acquiring a test environment parameter and a set parameter of a repeated avalanche resistance test circuit;

obtaining junction temperature parameters of the device to be tested under the current set parameters according to the test environment parameters and the set parameters, and comparing and analyzing the junction temperature parameters with a preset junction temperature threshold;

outputting information with reasonable setting parameters or prompt information for adjusting the setting parameters according to the comparison analysis result;

the junction temperature parameter comprises a peak junction temperature, and the step of obtaining the junction temperature parameter of the device to be tested under the current set parameter according to the test environment parameter and the set parameter comprises the following steps:

When the load resistance value of the repeated avalanche resistance testing circuit is not zero, analyzing according to the testing environment parameters and the power supply voltage value, the inductance value, the load resistance value, the duty ratio of working pulse, the working frequency, the on-resistance value of the device to be tested and the breakdown voltage value of the device to be tested of the repeated avalanche resistance testing circuit to obtain the peak junction temperature of the device to be tested; when the load resistance value of the repeated avalanche resistance testing circuit is zero, analyzing according to the testing environment parameter, the power supply voltage value, the inductance value, the duty cycle of working pulse, the working frequency and the breakdown voltage value of the device to be tested, and obtaining the peak junction temperature of the device to be tested;

the step of analyzing according to the test environment parameter and the power supply voltage value, the inductance value, the load resistance value, the duty ratio of working pulse, the working frequency, the on-resistance value of the device to be tested and the breakdown voltage value of the device to be tested of the repeated avalanche resistance test circuit to obtain the peak junction temperature of the device to be tested comprises the following steps:

Analyzing according to the power supply voltage value, the load resistance value and the on-resistance value of the device to be tested of the repeated avalanche resistance test circuit to obtain an avalanche current value; analyzing according to the avalanche current value, the load resistance value, the power supply voltage, the inductance value of the repeated avalanche resistance test circuit and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width; analyzing according to the avalanche current value, the avalanche pulse width and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency of the repeated avalanche resistance measuring circuit to obtain average avalanche power; analyzing according to the duty ratio of the working pulse of the repeated avalanche resistance testing circuit, the avalanche current value and the on-resistance value of the device to be tested to obtain average on-power; analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain an average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.

2. The avalanche test parameter selecting method according to claim 1, wherein the step of outputting information of reasonable setting parameters or prompting information of adjusting setting parameters according to the comparison analysis result comprises:

when the peak junction temperature is smaller than the preset junction temperature threshold value, outputting information with reasonable setting parameters;

And outputting prompt information for adjusting the setting parameters when the peak junction temperature is greater than or equal to the preset junction temperature threshold.

3. The avalanche test parameter selection method according to claim 1, wherein the test environment parameters include an environment temperature, a steady-state junction-ring thermal resistance value and a transient junction-ring thermal resistance value of a device to be tested, and the step of analyzing according to the average avalanche power, the average on power and the test environment parameters to obtain an average junction temperature includes:

analyzing according to the average avalanche power, the average conduction power, the ambient temperature and the steady-state junction ring thermal resistance value to obtain an average junction temperature;

the step of analyzing according to the avalanche power and the test environment parameter to obtain the junction temperature variation comprises the following steps:

Analyzing according to the avalanche power and the transient junction ring thermal resistance value to obtain junction temperature variation;

or, the test environment parameters include an average shell temperature, a steady-state crusting thermal resistance value and a transient crusting thermal resistance value of the device to be tested, and the step of analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain an average junction temperature includes:

analyzing according to the average avalanche power, the average conduction power, the average shell temperature and the steady-state crusting thermal resistance value to obtain an average junction temperature;

And analyzing according to the avalanche power and the transient crusting thermal resistance value to obtain the junction temperature variation.

4. The avalanche test parameter selection method according to claim 1, wherein the step of analyzing according to the test environment parameter and the power supply voltage value, the inductance value, the duty cycle of the operating pulse, the operating frequency and the breakdown voltage value of the device under test to obtain the peak junction temperature of the device under test comprises:

Analyzing according to the power supply voltage value, the inductance value, the duty ratio of the working pulse and the working frequency of the repeated avalanche resistance testing circuit to obtain an avalanche current value;

analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width;

Analyzing according to the avalanche current value, the inductance value, the power supply voltage and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value;

analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power;

analyzing according to the repeated avalanche energy value and the working frequency to obtain average avalanche power;

analyzing according to the average avalanche power and the test environment parameters to obtain an average junction temperature;

analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation;

and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.

5. The avalanche test parameter selection method according to claim 4, wherein the test environment parameters include an environment temperature, a steady-state junction-ring thermal resistance value and a transient junction-ring thermal resistance value of a device to be tested, and the step of analyzing according to the average avalanche power and the test environment parameters to obtain an average junction temperature includes:

Analyzing according to the average avalanche power, the ambient temperature and the steady-state junction ring thermal resistance value to obtain an average junction temperature;

or, the test environment parameters include an average shell temperature, a steady-state crusting thermal resistance value and a transient crusting thermal resistance value of the device to be tested, and the step of analyzing according to the average avalanche power and the test environment parameters to obtain an average junction temperature includes:

Analyzing according to the average avalanche power, the average shell temperature and the steady-state crusting thermal resistance value to obtain an average junction temperature;

6. An avalanche test parameter selection device, comprising:

The set parameter acquisition module is used for acquiring the set parameters of the test environment parameters and the repeated avalanche resistance test circuit;

The junction temperature parameter analysis module is used for obtaining the junction temperature parameter of the device to be tested under the current set parameter according to the test environment parameter and the set parameter, and comparing and analyzing the junction temperature parameter with a preset junction temperature threshold value;

The selection result prompting module is used for outputting reasonable information of the setting parameters or prompting information for adjusting the setting parameters according to the comparison analysis result;

The junction temperature parameter analysis module is further used for analyzing the test environment parameter and the power supply voltage value, the inductance value, the load resistance value, the duty ratio of working pulse, the working frequency, the on-resistance value of the device to be tested and the breakdown voltage value of the device to be tested according to the test environment parameter and the repeated avalanche resistance test circuit when the load resistance value of the repeated avalanche resistance test circuit is not zero; when the load resistance value of the repeated avalanche resistance testing circuit is zero, analyzing according to the testing environment parameter, the power supply voltage value, the inductance value, the duty cycle of working pulse, the working frequency and the breakdown voltage value of the device to be tested, and obtaining the peak junction temperature of the device to be tested;

the junction temperature parameter analysis module is also used for analyzing according to the power supply voltage value, the load resistance value and the on-resistance value of the device to be tested of the repeated avalanche resistance test circuit to obtain an avalanche current value; analyzing according to the avalanche current value, the load resistance value, the power supply voltage, the inductance value of the repeated avalanche resistance test circuit and the breakdown voltage value of the device to be tested to obtain an avalanche pulse width; analyzing according to the avalanche current value, the avalanche pulse width and the breakdown voltage value of the device to be tested to obtain a repeated avalanche energy value; analyzing according to the repeated avalanche energy value and the avalanche pulse width to obtain avalanche power; analyzing according to the repeated avalanche energy value and the working frequency of the repeated avalanche resistance measuring circuit to obtain average avalanche power; analyzing according to the duty ratio of the working pulse of the repeated avalanche resistance testing circuit, the avalanche current value and the on-resistance value of the device to be tested to obtain average on-power; analyzing according to the average avalanche power, the average conduction power and the test environment parameters to obtain an average junction temperature; analyzing according to the avalanche power and the test environment parameters to obtain junction temperature variation; and obtaining a junction temperature peak value according to the average junction temperature and the junction temperature variation.

7. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any one of claims 1 to 5 when the computer program is executed.

8. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 5.