CN112750915A - 一种薄膜砷化镓太阳电池上电极及其制备方法 - Google Patents
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Abstract
一种薄膜砷化镓太阳电池上电极及其制备方法,所述薄膜砷化镓太阳电池上电极包括:底层金属栅极、介质层和顶层金属栅极,其中,所述底层金属栅极、所述介质层和所述顶层金属栅极由内向外依次设置于外延片的外表面上,所述底层金属栅极和所述顶层金属栅极连接。本发明提供的一种薄膜砷化镓太阳电池上电极及其制备方法具有如下优点和积极效果:使用局部绝缘型上电极结构,可以有效避免电池局部受压时造成的短路现象,保证电池输出效率;使用氧化物介质层作为绝缘结构,具有耐高温、结合力好、绝缘性强等特点;采用了光刻技术和真空蒸发技术制备上电极,具有工艺简单、技术成熟等特点。
Description
技术领域
本发明属于半导体技术领域,具体涉及一种薄膜砷化镓太阳电池上电极及其制备方法。
背景技术
金属有机化合物气相外延技术简称MOCVD,是用氢气载气将金属有机化合物蒸汽和非金属氢化物经过多路开关送入反应室内加热的衬底上,通过分解反应而最终在其上生长出外延层的先进技术.它的生长过程涉及流体力学、气相及固体表面反应动力学及二者相耦合的复杂过程,一般其外延生长是在热力学***衡条件下进行的。
以砷化镓为衬底生长制备Ⅲ-Ⅴ族外延结构是制作太阳能电池及LED的重要技术手段,其中,太阳能电池可生长为多结太阳电池,其效率远高于其他种类太阳电池。同时,由于砷化镓属于直接带隙半导体,只需要较薄的结构就可以实现所需功能。目前,薄膜砷化镓太阳电池多使用纯金属体系作为上电极使用,其缺点是由于金属延展性较好且薄膜砷化镓材料较脆,电极受到局部压力时易造成电池破损,上下电极连接短路导致电池输出功率大幅下降。
发明内容
为解决上述问题,本发明提供了一种薄膜砷化镓太阳电池上电极,包括:底层金属栅极、介质层和顶层金属栅极,其中,所述底层金属栅极、所述介质层和所述顶层金属栅极由内向外依次设置于外延片的外表面上,所述底层金属栅极和所述顶层金属栅极连接。
优选地,所述底层金属栅极包括:底层主栅、底层焊点和底层细栅,其中,所述底层主栅设置于太阳电池侧边,所述底层焊点等间距布置于所述底层主栅上,所述底层细栅均匀布置于所述外延片上,且与所述底层主栅垂直。
优选地,所述底层主栅的宽度范围为0.2mm-1mm,所述底层主栅的长度范围为5mm-100mm,所述底层细栅的宽度范围为0.005mm-0.1mm,所述底层细栅的长度范围为5mm-100mm,所述底层焊点的尺寸范围为0.5mm×0.5mm-5mm×5mm。
优选地,所述顶层金属栅极包括:顶层主栅、顶层焊点和顶层细栅,其中,所述顶层主栅设置于所述介质层侧边,所述顶层焊点等间距布置于所述顶层主栅上,所述顶层细栅均匀布置于所述介质层上,且与所述顶层主栅垂直。
优选地,所述顶层主栅的宽度范围为0.2mm-1mm,所述顶层主栅的长度范围为5mm-100mm,所述顶层细栅的宽度范围为0.005mm-0.1mm,所述顶层细栅的长度范围为5mm-100mm,所述顶层焊点的尺寸范围为0.5mm×0.5mm-5mm×5mm。
优选地,所述外延片为薄膜砷化镓外延片,且最外表面为N型砷化镓接触层。
优选地,所述介质膜为SiOx、AlOx、TiOx或SiNx。
优选地,所述介质膜的厚度为20nm-200nm。
优选地,所述介质层为分散不连续的图形,且占据所述底层金属栅极中底层主栅的面积为50%-80%,占据所述底层金属栅极中底层焊点的面积为100%,占据所述底层金属栅极中底层细栅的面积为10%-30%。
本发明还提供了一种薄膜砷化镓太阳电池上电极的制备方法,所述薄膜砷化镓太阳电池上电极包括如上述中任一所述薄膜砷化镓太阳电池上电极,所述方法包括步骤:
将外延片放入丙酮中用超声清洗5分钟以上后冲水甩干;
将所述外延片放入涂胶机台均匀涂覆一层厚度500nm-3000nm的光刻胶;
在所述光刻胶上制作底层金属栅极图形;
将所述外延片放入真空镀膜机中并将所述底层金属栅极图形的一侧朝向蒸发源;
对所述真空镀膜机抽真空,其中真空度小于5E-3Pa;
对所述底层金属栅极图形进行金属蒸发工艺,其中蒸发速率为0.1nm-10nm/s;
对所述真空镀膜机进行充气后取出所述外延片;
将所述外延片放入去胶液中进行10-120min的浸泡;
将所述外延片取出并用棉球或水枪清洗;
将所述外延片放入干净去胶液中用超声清洗1-2min后冲水甩干;
将所述外延片放入涂胶机台均匀涂覆一层厚度500nm-3000nm的光刻胶;
在所述光刻胶上制作介质层图形;
将所述外延片放入真空镀膜机中并将所述介质层图形的一侧朝向蒸发源;
对所述真空镀膜机抽真空,其中真空度小于5E-3Pa;
对所述介质层图形进行金属蒸发工艺,其中蒸发速率为0.1nm-10nm/s;
对所述真空镀膜机进行充气后取出所述外延片;
将所述外延片放入丙酮中用超声清洗5分钟以上后冲水甩干;
将所述外延片放入涂胶机台均匀涂覆一层厚度500nm-3000nm的光刻胶;
在所述光刻胶上制作顶层金属栅极图形;
将所述外延片放入真空镀膜机中并将所述顶层金属栅极图形的一侧朝向蒸发源;
对所述真空镀膜机抽真空,其中真空度小于5E-3Pa;
对所述顶层金属栅极图形进行金属蒸发工艺,其中蒸发速率为0.1nm-10nm/s;
对所述真空镀膜机进行充气后取出所述外延片;
将所述外延片放入去胶液中进行10-120min的浸泡;
将所述外延片取出并用棉球或水枪清洗;
将所述外延片放入干净去胶液中用超声清洗1-2min后冲水甩干。
本发明提供的一种薄膜砷化镓太阳电池上电极及其制备方法具有如下优点和积极效果:
(1)使用局部绝缘型上电极结构,可以有效避免电池局部受压时造成的短路现象,保证电池输出效率;
(2)使用氧化物介质层作为绝缘结构,具有耐高温、结合力好、绝缘性强等特点;
(3)采用了光刻技术和真空蒸发技术制备上电极,具有工艺简单、技术成熟等特点。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。
图1为本发明提供了一种薄膜砷化镓太阳电池上电极中的薄膜砷化镓外延片示意图;
图2为本发明提供了一种薄膜砷化镓太阳电池上电极中的上电极断面结构示意图;
图3为本发明提供了一种薄膜砷化镓太阳电池上电极中上电极底层栅线的俯视示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明了,下面结合具体实施方式并参照附图,对本发明进一步详细说明。应该理解,这些描述只是示例性的,而并非要限制本发明的范围。此外,在以下说明中,省略了对公知结构和技术的描述,以避免不必要地混淆本发明的概念。
如图1-3,在本申请实施例中,本发明提供了一种薄膜砷化镓太阳电池上电极,包括:底层金属栅极3、介质层4和顶层金属栅极5,其中,所述底层金属栅极3、所述介质层4和所述顶层金属栅极5由内向外依次设置于外延片1的外表面上,所述底层金属栅极3和所述顶层金属栅极5连接。
在本申请实施例中,所述外延片1尺寸为2-6英尺,底层金属栅极3和顶层金属栅极5所采用的金属可以是Au、Ag、Cu、Ge、Ni、Ti、Al等单质金属,也可以是上述多种金属的组合,底层金属栅极3和顶层金属栅极5的厚度为1微米-10微米。
在本申请实施例中,所述底层金属栅极3包括:底层主栅7、底层焊点6和底层细栅8,其中,所述底层主栅7设置于太阳电池侧边,所述底层焊点6等间距布置于所述底层主栅7上,所述底层细栅8均匀布置于所述外延片1上,且与所述底层主栅7垂直。
在本申请实施例中,所述底层主栅7的宽度范围为0.2mm-1mm,所述底层主栅7的长度范围为5mm-100mm,所述底层细栅8的宽度范围为0.005mm-0.1mm,所述底层细栅8的长度范围为5mm-100mm,所述底层焊点6的尺寸范围为0.5mm×0.5mm-5mm×5mm。
在本申请实施例中,所述顶层金属栅极5包括:顶层主栅、顶层焊点和顶层细栅,其中,所述顶层主栅设置于所述介质层4侧边,所述顶层焊点等间距布置于所述顶层主栅上,所述顶层细栅均匀布置于所述介质层4上,且与所述顶层主栅垂直。
在本申请实施例中,所述顶层主栅的宽度范围为0.2mm-1mm,所述顶层主栅的长度范围为5mm-100mm,所述顶层细栅的宽度范围为0.005mm-0.1mm,所述顶层细栅的长度范围为5mm-100mm,所述顶层焊点的尺寸范围为0.5mm×0.5mm-5mm×5mm。
在本申请实施例中,所述外延片1为薄膜砷化镓外延片1,且最外表面为N型砷化镓接触层2。
在本申请实施例中,所述介质膜为SiOx、AlOx、TiOx或SiNx。
在本申请实施例中,所述介质膜的厚度为20nm-200nm。
在本申请实施例中,所述介质层4为分散不连续的图形,且占据所述底层金属栅极3中底层主栅7的面积为50%-80%,占据所述底层金属栅极3中底层焊点6的面积为100%,占据所述底层金属栅极3中底层细栅8的面积为10%-30%。
在本申请实施例中,本发明还提供了一种薄膜砷化镓太阳电池上电极的制备方法,所述薄膜砷化镓太阳电池上电极包括如图1-3中所述薄膜砷化镓太阳电池上电极,所述方法包括步骤:
将外延片1放入丙酮中用超声清洗5分钟以上后冲水甩干;
将所述外延片1放入涂胶机台均匀涂覆一层厚度500nm-3000nm的光刻胶;
在所述光刻胶上制作底层金属栅极3图形;
将所述外延片1放入真空镀膜机中并将所述底层金属栅极3图形的一侧朝向蒸发源;
对所述真空镀膜机抽真空,其中真空度小于5E-3Pa;
对所述底层金属栅极3图形进行金属蒸发工艺,其中蒸发速率为0.1nm-10nm/s;
对所述真空镀膜机进行充气后取出所述外延片1;
将所述外延片1放入去胶液中进行10-120min的浸泡;
将所述外延片1取出并用棉球或水枪清洗;
将所述外延片1放入干净去胶液中用超声清洗1-2min后冲水甩干;
将所述外延片1放入涂胶机台均匀涂覆一层厚度500nm-3000nm的光刻胶;
在所述光刻胶上制作介质层4图形;
将所述外延片1放入真空镀膜机中并将所述介质层4图形的一侧朝向蒸发源;
对所述真空镀膜机抽真空,其中真空度小于5E-3Pa;
对所述介质层4图形进行金属蒸发工艺,其中蒸发速率为0.1nm-10nm/s;
对所述真空镀膜机进行充气后取出所述外延片1;
将所述外延片1放入丙酮中用超声清洗5分钟以上后冲水甩干;
将所述外延片1放入涂胶机台均匀涂覆一层厚度500nm-3000nm的光刻胶;
在所述光刻胶上制作顶层金属栅极5图形;
将所述外延片1放入真空镀膜机中并将所述顶层金属栅极5图形的一侧朝向蒸发源;
对所述真空镀膜机抽真空,其中真空度小于5E-3Pa;
对所述顶层金属栅极5图形进行金属蒸发工艺,其中蒸发速率为0.1nm-10nm/s;
对所述真空镀膜机进行充气后取出所述外延片1;
将所述外延片1放入去胶液中进行10-120min的浸泡;
将所述外延片1取出并用棉球或水枪清洗;
将所述外延片1放入干净去胶液中用超声清洗1-2min后冲水甩干。
在本申请实施例中,所采用的光刻胶满足Lift-off要求。
在本申请实施例中,所采用的去胶液为碱性去胶液,碱性去胶液不会腐蚀底层金属栅极和顶层金属栅极。
本发明提供的一种薄膜砷化镓太阳电池上电极及其制备方法具有如下优点和积极效果:
(1)使用局部绝缘型上电极结构,可以有效避免电池局部受压时造成的短路现象,保证电池输出效率;
(2)使用氧化物介质层作为绝缘结构,具有耐高温、结合力好、绝缘性强等特点;
(3)采用了光刻技术和真空蒸发技术制备上电极,具有工艺简单、技术成熟等特点。
应当理解的是,本发明的上述具体实施方式仅仅用于示例性说明或解释本发明的原理,而不构成对本发明的限制。因此,在不偏离本发明的精神和范围的情况下所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。此外,本发明所附权利要求旨在涵盖落入所附权利要求范围和边界、或者这种范围和边界的等同形式内的全部变化和修改例。
Claims (10)
1.一种薄膜砷化镓太阳电池上电极,其特征在于,包括:底层金属栅极、介质层和顶层金属栅极,其中,所述底层金属栅极、所述介质层和所述顶层金属栅极由内向外依次设置于外延片的外表面上,所述底层金属栅极和所述顶层金属栅极连接。
2.根据权利要求1所述的薄膜砷化镓太阳电池上电极,其特征在于,所述底层金属栅极包括:底层主栅、底层焊点和底层细栅,其中,所述底层主栅设置于太阳电池侧边,所述底层焊点等间距布置于所述底层主栅上,所述底层细栅均匀布置于所述外延片上,且与所述底层主栅垂直。
3.根据权利要求2所述的薄膜砷化镓太阳电池上电极,其特征在于,所述底层主栅的宽度范围为0.2mm-1mm,所述底层主栅的长度范围为5mm-100mm,所述底层细栅的宽度范围为0.005mm-0.1mm,所述底层细栅的长度范围为5mm-100mm,所述底层焊点的尺寸范围为0.5mm×0.5mm-5mm×5mm。
4.根据权利要求1所述的薄膜砷化镓太阳电池上电极,其特征在于,所述顶层金属栅极包括:顶层主栅、顶层焊点和顶层细栅,其中,所述顶层主栅设置于所述介质层侧边,所述顶层焊点等间距布置于所述顶层主栅上,所述顶层细栅均匀布置于所述介质层上,且与所述顶层主栅垂直。
5.根据权利要求4所述的薄膜砷化镓太阳电池上电极,其特征在于,所述顶层主栅的宽度范围为0.2mm-1mm,所述顶层主栅的长度范围为5mm-100mm,所述顶层细栅的宽度范围为0.005mm-0.1mm,所述顶层细栅的长度范围为5mm-100mm,所述顶层焊点的尺寸范围为0.5mm×0.5mm-5mm×5mm。
6.根据权利要求1所述的薄膜砷化镓太阳电池上电极,其特征在于,所述外延片为薄膜砷化镓外延片,且最外表面为N型砷化镓接触层。
7.根据权利要求1所述的薄膜砷化镓太阳电池上电极,其特征在于,所述介质膜为SiOx、AlOx、TiOx或SiNx。
8.根据权利要求1所述的薄膜砷化镓太阳电池上电极,其特征在于,所述介质膜的厚度为20nm-200nm。
9.根据权利要求1所述的薄膜砷化镓太阳电池上电极,其特征在于,所述介质层为分散不连续的图形,且占据所述底层金属栅极中底层主栅的面积为50%-80%,占据所述底层金属栅极中底层焊点的面积为100%,占据所述底层金属栅极中底层细栅的面积为10%-30%。
10.一种薄膜砷化镓太阳电池上电极的制备方法,其特征在于,所述薄膜砷化镓太阳电池上电极包括如权利要求1-9中任一所述薄膜砷化镓太阳电池上电极,所述方法包括步骤:
将外延片放入丙酮中用超声清洗5分钟以上后冲水甩干;
将所述外延片放入涂胶机台均匀涂覆一层厚度500nm-3000nm的光刻胶;
在所述光刻胶上制作底层金属栅极图形;
将所述外延片放入真空镀膜机中并将所述底层金属栅极图形的一侧朝向蒸发源;
对所述真空镀膜机抽真空,其中真空度小于5E-3Pa;
对所述底层金属栅极图形进行金属蒸发工艺,其中蒸发速率为0.1nm-10nm/s;
对所述真空镀膜机进行充气后取出所述外延片;
将所述外延片放入去胶液中进行10-120min的浸泡;
将所述外延片取出并用棉球或水枪清洗;
将所述外延片放入干净去胶液中用超声清洗1-2min后冲水甩干;
将所述外延片放入涂胶机台均匀涂覆一层厚度500nm-3000nm的光刻胶;
在所述光刻胶上制作介质层图形;
将所述外延片放入真空镀膜机中并将所述介质层图形的一侧朝向蒸发源;
对所述真空镀膜机抽真空,其中真空度小于5E-3Pa;
对所述介质层图形进行金属蒸发工艺,其中蒸发速率为0.1nm-10nm/s;
对所述真空镀膜机进行充气后取出所述外延片;
将所述外延片放入丙酮中用超声清洗5分钟以上后冲水甩干;
将所述外延片放入涂胶机台均匀涂覆一层厚度500nm-3000nm的光刻胶;
在所述光刻胶上制作顶层金属栅极图形;
将所述外延片放入真空镀膜机中并将所述顶层金属栅极图形的一侧朝向蒸发源;
对所述真空镀膜机抽真空,其中真空度小于5E-3Pa;
对所述顶层金属栅极图形进行金属蒸发工艺,其中蒸发速率为0.1nm-10nm/s;
对所述真空镀膜机进行充气后取出所述外延片;
将所述外延片放入去胶液中进行10-120min的浸泡;
将所述外延片取出并用棉球或水枪清洗;
将所述外延片放入干净去胶液中用超声清洗1-2min后冲水甩干。
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