CN112750676B

CN112750676B - Plasma processing device

Info

Publication number: CN112750676B
Application number: CN202011334077.4A
Authority: CN
Inventors: 崔都嵋
Original assignee: LG Display Optoelectronics Technology China Co Ltd
Current assignee: LG Display Optoelectronics Technology China Co Ltd
Priority date: 2020-11-24
Filing date: 2020-11-24
Publication date: 2022-07-08
Anticipated expiration: 2040-11-24
Also published as: CN112750676A

Abstract

The embodiment of the invention discloses a plasma processing device. The plasma processing apparatus includes: the reaction chamber is used for carrying out plasma reaction; the upper electrode is arranged at the top of the reaction chamber, and the lower electrode is arranged at the bottom of the reaction chamber; the first temperature adjusting part and the second temperature adjusting part are both arranged at the top of the reaction chamber, the vertical projection of the plane of the upper electrode is positioned in the upper electrode, and the vertical projection of the plane of the upper electrode surrounds the upper electrode. The embodiment of the invention can avoid the condition that the reaction chamber of the whole plasma processing device can only heat and cool the edge area of the upper electrode, prevent the temperature difference between the middle area and the edge area of the reaction chamber from being overlarge, improve the temperature uniformity of the reaction chamber, improve the reaction environment of plasma etching and deposition and ensure the plasma processing effect.

Description

Plasma processing device

Technical Field

The embodiment of the invention relates to the field of semiconductor manufacturing, in particular to a plasma processing device.

Background

At present, the plasma technology is widely applied to etching of surface substances and deposition of thin films. In the aspect of etching surface substances, plasma etching has the advantages of good etching rate and anisotropy, etching selectivity, process repeatability and the like; in the field of thin film Deposition, Plasma Enhanced Chemical Vapor Deposition (PECVD) is widely used in industry due to its advantages of low Deposition temperature, small influence on the substrate, high Deposition speed, and good film thickness and component uniformity.

The principle of plasma etching is to form a plasma from a gas exposed to an electric field, thereby generating ionized gas and gas composed of released energetic electrons, thereby forming plasma or ions, and atoms of the ionized gas are accelerated by the electric field, releasing sufficient force to tightly adhere materials or etch surfaces. In a plasma etch process or deposition process, the uniformity of the etch or deposition depends in part on the temperature uniformity of the gas inside the chamber. In the existing plasma processing device, a heating module and a cooling module in a reaction chamber are usually arranged around the edge of an upper electrode, and in the process of adjusting the temperature of the reaction chamber by using the heating module and the cooling module, the temperature of the whole chamber can be controlled only by adjusting the local temperature of the edge area of the upper electrode, so that the local temperature difference of the temperature of the whole reaction chamber is easily overlarge, the temperature is not uniform, the etching or deposition uniformity is poor, and the plasma processing effect is influenced.

Disclosure of Invention

The invention provides a plasma processing device, which is used for improving the structural layout of temperature regulation in a reaction chamber and improving the temperature uniformity of the reaction chamber in the plasma processing process.

An embodiment of the present invention provides a plasma processing apparatus, including:

the reaction chamber is used for carrying out plasma reaction;

the upper electrode is arranged at the top of the reaction chamber, and the lower electrode is arranged at the bottom of the reaction chamber;

the first temperature adjusting part and the second temperature adjusting part are arranged at the top of the reaction chamber, the vertical projection of the plane of the upper electrode is located in the upper electrode, and the vertical projection of the plane of the upper electrode surrounds the upper electrode.

Optionally, the first temperature adjustment section includes a plurality of first heating sections and a plurality of first cooling sections;

the vertical projections of the plurality of first heating parts on the plane of the upper electrode are uniformly distributed in the upper electrode, and the vertical projections of the plurality of first cooling parts on the plane of the upper electrode are uniformly distributed in the upper electrode.

Optionally, the vertical projections of the plurality of first heating portions on the plane where the upper electrode is located correspond to the vertical projections of the plurality of first cooling portions on the plane where the upper electrode is located one by one and are at least partially overlapped.

Optionally, the plurality of first heating portions are arranged in an array, or the plurality of first heating portions are uniformly arranged along a circumference.

Optionally, the second temperature adjustment portion includes a second heating portion and a second cooling portion, and a perpendicular projection of the second heating portion and the second cooling portion on a plane where the upper electrode is located surrounds the upper electrode.

Optionally, the first cooling part and the second cooling part are both cooling pipes;

the adjacent two first cooling parts are communicated with each other, and the adjacent first cooling parts and the adjacent second cooling parts are communicated with each other, so that the plurality of first cooling parts and the second cooling parts form a communication pipeline which comprises a cooling liquid inlet and a cooling liquid outlet;

two adjacent first heating parts are connected with each other, and the adjacent first heating parts and the second heating parts are connected with each other, so that the plurality of first heating parts and the plurality of second heating parts form a heating network;

the plasma processing apparatus further includes a heating control section and a cooling supply section; the heating control part is connected with the heating network and is used for controlling the heating of the heating network; the cooling supply part is connected with the cooling liquid inlet and the cooling liquid outlet and used for supplying cooling liquid to the communication pipeline and driving the cooling liquid to circulate.

Optionally, the plasma processing apparatus further comprises temperature sensors electrically connected to the heating control part and the cooling supply part, respectively;

the temperature sensor is used for detecting the temperature of the reaction chamber; the heating control part is used for controlling the heating network to heat according to the temperature of the reaction chamber, and/or the cooling supply part is used for driving the cooling liquid in the communication pipeline to circulate according to the temperature of the reaction chamber.

Optionally, the first cooling part and the second cooling part are both cooling pipes; the first cooling part and the second cooling part each comprise a cooling liquid inlet and a cooling liquid outlet;

the plasma processing apparatus further includes a heating control section and a cooling supply section; the heating control part is respectively connected with the plurality of first heating parts and the plurality of second heating parts and is used for independently controlling the first heating parts and the second heating parts to heat; the cooling supply part is connected with the cooling liquid inlets and the cooling liquid outlets of the plurality of first cooling parts and the plurality of second cooling parts respectively, and is used for independently supplying cooling liquid to the first cooling parts and the second cooling parts and driving the circulation of the cooling liquid.

Optionally, the plasma processing apparatus further comprises a plurality of temperature sensors uniformly disposed in the reaction chamber, the plurality of temperature sensors being electrically connected to the heating control part and the cooling supply part, respectively;

the temperature sensors are used for detecting the temperatures of different areas of the reaction chamber; the heating control part is used for controlling the first heating part or the second heating part at the corresponding position to heat according to the temperatures of different areas of the reaction chamber; and/or the cooling supply part is used for driving the cooling liquid in the first cooling part or the second cooling part at the corresponding position to circulate according to the temperature of different areas of the reaction chamber.

Optionally, the first heating part and the second heating part are heating wires or heating plates.

In the plasma processing apparatus provided in the embodiment of the present invention, the first temperature adjustment portion and the second temperature adjustment portion are disposed at the top of the reaction chamber, the first temperature adjustment portion is disposed in the upper electrode in the vertical projection of the plane of the upper electrode, and the second temperature adjustment portion surrounds the upper electrode in the vertical projection of the plane of the upper electrode, so that the first temperature adjustment portion can be used to perform temperature adjustment and control on the inner region of the coverage area of the upper electrode, and the second temperature adjustment portion is used to perform temperature adjustment and control on the edge region of the coverage area of the upper electrode, thereby improving uniformity of temperature adjustment and control of the reaction chamber of the plasma processing apparatus. The embodiment of the invention can avoid the condition that the reaction chamber of the whole plasma processing device can only heat and cool the edge area of the upper electrode, prevent the temperature difference between the middle area and the edge area of the reaction chamber from being overlarge, improve the temperature uniformity of the reaction chamber, improve the reaction environment of plasma etching and deposition and ensure the plasma processing effect.

Drawings

Fig. 1 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present invention;

FIG. 2 is a perspective view of the top of a reaction chamber of the plasma processing apparatus of FIG. 1;

FIG. 3 is a cross-sectional view of a top region of a reaction chamber of the plasma processing apparatus of FIG. 1;

FIG. 4 is a perspective view of the top of another plasma processing apparatus provided by an embodiment of the present invention;

FIG. 5 is a schematic view of another plasma processing apparatus according to an embodiment of the present invention;

FIG. 6 is a schematic view showing a structure of a first temperature adjusting section in the plasma processing apparatus shown in FIG. 5;

FIG. 7 is a schematic view showing a structure of a second temperature adjusting section in the plasma processing apparatus shown in FIG. 5.

Wherein, the reaction chamber 10, the upper electrode 21, the lower electrode 22, the first temperature regulating part 31, the second temperature regulating part 32, the first heating part 311, the first cooling part 312, the second heating part 321, the second cooling part 322, the heating control part 40, the cooling supply part 50 and the temperature sensor 60.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not to be construed as limiting the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

Fig. 1 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the present invention, fig. 2 is a perspective view of a top portion of a reaction chamber of the plasma processing apparatus shown in fig. 1, and referring to fig. 1 and 2, the plasma processing apparatus includes: a reaction chamber 10 for performing a plasma reaction; an upper electrode 21 and a lower electrode 22, wherein the upper electrode 21 is disposed at the top of the reaction chamber 10, and the lower electrode 22 is disposed at the bottom of the reaction chamber 10; the first temperature adjusting part 31 and the second temperature adjusting part 32 are disposed on the top of the reaction chamber 10, the first temperature adjusting part 31 is located in the upper electrode 21 in a vertical projection of the plane of the upper electrode 21, and the second temperature adjusting part 32 surrounds the upper electrode 21 in a vertical projection of the plane of the upper electrode 21.

The reaction chamber 10 may be a vacuum chamber, the upper electrode 21 and the lower electrode 22 are substantially an upper electrode and a lower electrode, the upper electrode 21 and the lower electrode 22 are located in the vacuum chamber and connected to a radio frequency power source (not shown) to form a voltage difference between the upper electrode 21 and the lower electrode 22, when performing plasma etching or deposition, a small amount of process gas molecules are contained in the reaction chamber 10, and the voltage difference between the upper electrode 21 and the lower electrode 22 is used to excite the process gas molecules in the reaction chamber 10 in a vacuum environment to generate plasma. The upper electrode 21 and the lower electrode 22 are respectively located at the top and bottom of the reaction chamber 10, and the middle region thereof is used for filling a process gas to form plasma, while a substrate to be processed is fixed in the region and is processed using the plasma. Taking the etching process as an example, the formed plasma bombards or sputters the material to be etched on the substrate to be etched on the lower electrode 22 to form a volatile substance, thereby achieving the purpose of etching. It is understood that the reaction chamber 10 is provided with a base for supporting a substrate to be processed, and the lower electrode 22 may be provided on the base. In addition, the bottom of the reaction chamber 10 should be provided with an exhaust hole to communicate with an external air pump (not shown), so that the volatile substance can be exhausted by the external air pump, and the inside of the reaction chamber 10 can maintain a proper working pressure.

During plasma processing of an etch process or a deposition process, it is desirable to provide a working environment for the process gases, wherein temperature control is involved. In this embodiment, the second temperature adjustment portion 32 is disposed in the reaction chamber 10, and the second temperature adjustment portion 32 surrounds the region covered by the upper electrode 21, that is, the second temperature adjustment portion 32 is disposed mainly in the edge region of the reaction chamber 10. It will be appreciated that during the heating or cooling of the edge regions of the reaction chamber 10, the middle region will gradually increase or decrease in temperature, and the further away from the edge regions, the slower the temperature change, thereby creating a significant temperature difference. Since the region covered by the upper electrode 21 is a main region for plasma formation, the temperature difference affects the efficiency of plasma formation and the uniformity of plasma processing. In this embodiment, the first temperature adjustment portion 31 is disposed in the reaction chamber 10, the first temperature adjustment portion 31 is located in the region covered by the upper electrode 21, and can simultaneously perform temperature regulation on the middle region of the reaction chamber 10, and further the first temperature adjustment portion 31 and the second temperature adjustment portion 32 can respectively perform temperature adjustment on the middle region and the edge region of the reaction chamber 10, so as to prevent the middle region and the edge region from generating obvious temperature difference, and improve the uniformity of the internal temperature of the reaction chamber 10.

It should be noted that the first temperature adjustment portion 31 and the second temperature adjustment portion 32 are disposed at the top of the reaction chamber 10, and can cover the entire reaction chamber, so as to uniformly control the temperature of the reaction chamber. And, two temperature regulation parts are provided at the top of the reaction chamber 10, which not only facilitates installation, but also reduces the structural complexity of the bottom bearing region by using the effective region of the top. Alternatively, the first temperature adjusting part 31 and the second temperature adjusting part 32 may be disposed between the ceiling of the reaction chamber 10 and the upper electrode 21, or the first temperature adjusting part 31 and the second temperature adjusting part 32 may be disposed in the ceiling. For a specific setting, the skilled person can make a reasonable arrangement according to the structure and components of the top of the reaction chamber, without being limited thereto.

With continued reference to fig. 1 and 2, optionally, in the present embodiment, the first temperature adjustment section 31 may be provided to include a plurality of first heating sections 311 and a plurality of first cooling sections 312; the plurality of first heating portions 311 are uniformly distributed in the upper electrode 21 in a vertical projection on the plane of the upper electrode 21, and the plurality of first cooling portions 312 are uniformly distributed in the upper electrode 21 in a vertical projection on the plane of the upper electrode 21. In addition, the second temperature adjustment portion 32 may further include a second heating portion 321 and a second cooling portion 322, and a vertical projection of the second heating portion 321 and the second cooling portion 322 on the plane of the upper electrode 21 may surround the upper electrode 21.

First, the second heating part 321 and the second cooling part 322 are disposed around the edge of the upper electrode 21, so as to ensure that the edge region of the reaction chamber 10 can be controlled by temperature. Meanwhile, the first temperature adjusting part 31 is provided as a plurality of first heating parts 311 and a plurality of first cooling parts 312, and different positions in the area covered by the upper electrode 21 can be temperature-adjusted using the plurality of first heating parts 311 and the plurality of first cooling parts 312, respectively. Obviously, the plurality of first heating parts 311 and the plurality of first cooling parts 312 may ensure a relatively uniform temperature of the area covered by the upper electrode 21, i.e., may make the temperature inside the reaction chamber 10 more uniform. It is understood that the greater the arrangement density and the greater the number of the first heating part 311 and the first cooling part 312, the more uniform the internal temperature of the reaction chamber 10. Other functional structures or components, such as metal windows, temperature sensors, etc., are also disposed on the top of the reaction chamber 10. In order to avoid influencing the arrangement and assembly of other functional components, the first temperature adjustment portion 31 is provided with the plurality of first heating portions 311 and the plurality of first cooling portions 312, so that the installation area at the top can be saved, other component structures can be conveniently accommodated, and meanwhile, the material cost can be saved. In addition, the plurality of first heating parts 311 and the plurality of first cooling parts 312 also contribute to realizing individual regulation and control of local temperature, so that temperature control is more refined.

Fig. 3 is a cross-sectional view of the top region of the reaction chamber of the plasma processing apparatus shown in fig. 1, and referring to fig. 3, in this embodiment, a vertical projection of the plurality of first heating portions 311 on the plane of the upper electrode 21 may be selected to correspond to a vertical projection of the plurality of first cooling portions 312 on the plane of the upper electrode 21, and all of the first heating portions and the first cooling portions may at least partially overlap. Further, the first heating part 311 and the first cooling part 312 may be arranged to overlap in a vertical projection of the plane in which the upper electrode 21 is located. At this time, the first heating part 311 and the first cooling part 312 regulate and control the temperature of the same position, so that the temperature change of a certain position can be accurately controlled, the local temperature difference caused by the heating of the first heating part 311 and the cooling dislocation of the first cooling part 312 is prevented, and the problem of temperature difference caused by structural design is avoided.

On the basis of the above-described embodiments, the present invention provides various embodiments for the arrangement of the plurality of first heating sections. Referring to fig. 2, in this embodiment, the plurality of first heating portions 311 may be arranged in an array, and on the basis that the first heating portions 311 and the first cooling portions 312 are overlapped up and down, the first cooling portions 312 are also arranged in an array. Fig. 4 is a perspective view of the top of another plasma processing apparatus according to an embodiment of the present invention, and referring to fig. 4, in another embodiment of the present invention, a plurality of first heating portions 311 may be optionally disposed to be uniformly arranged along the circumference. It is understood that the shape of the plasma processing apparatus can be freely designed by those skilled in the art, and thus, the shape of the reaction chamber 10 may be changed. In the rectangular reaction chamber as shown in fig. 2, in order to ensure that the plurality of first heating parts 311 are uniformly arranged, an array structure may be provided. In the circular reaction chamber as shown in fig. 4, also to ensure that the plurality of first heating parts 311 are uniformly arranged, a circumferential arrangement may be provided. Of course, the two arrangements shown above are only two specific embodiments of the present invention, and those skilled in the art can also adjust and modify the above arrangements, for example, for an array arrangement, the first heating portions of adjacent rows may be arranged to be staggered with each other, and for a circumferential arrangement, the first heating portions may be arranged to be uniformly arranged on a plurality of circumferences, which is not limited herein.

In the embodiment of the present invention, the first heating portion and the second heating portion may be heating wires or heating plates, and the heating control of the first heating portion and the second heating portion may be realized by using the connection of the conductive wires. And the heating temperature can be gradually reduced and the heating speed can be reduced by changing the power supply, and the variation trend of the heating temperature can be adaptively adjusted according to the actual temperature condition, so that the heating speed and the heating variation trend can be accurately controlled.

Fig. 5 is a schematic structural diagram of another plasma processing apparatus according to an embodiment of the present invention, fig. 6 is a schematic structural diagram of a first temperature adjustment portion in the plasma processing apparatus shown in fig. 5, and fig. 7 is a schematic structural diagram of a second temperature adjustment portion in the plasma processing apparatus shown in fig. 5, in this embodiment, referring to fig. 6 first, two adjacent first heating portions 311 are optionally connected to each other, and adjacent first heating portions 311 and second heating portions 321 are connected, so that a plurality of first heating portions 311 and second heating portions 321 form a heating network; referring to fig. 7, both the optional first cooling portion 312 and the second cooling portion 322 are cooling ducts; the adjacent two first cooling portions 312 are communicated with each other, and the adjacent first cooling portions 312 and the adjacent second cooling portions 322 are communicated with each other, so that a plurality of first cooling portions 312 and second cooling portions 322 form a communication channel, and the communication channel includes a cooling liquid inlet and a cooling liquid outlet. Referring to fig. 5, the plasma processing apparatus further includes a heating control part 40 and a cooling supply part 50; the heating control part 40 is connected with the heating network and used for controlling the heating of the heating network; the cooling supply portion 50 is connected to the cooling liquid inlet and the cooling liquid outlet, and is used for supplying the cooling liquid to the communication pipe and driving the cooling liquid to circulate.

The cooling liquid generally adopts water with higher specific heat capacity and other additives to form, so that the boiling point of the cooling liquid can be adjusted by using the additives while the heat absorption capacity is ensured to realize cooling, and the cooling liquid can tolerate higher temperature without boiling. The cooling pipe may be made of metal or metal alloy with good heat conductivity, and is not limited herein. In this embodiment, the heating control unit 40 and the cooling supply unit 50 can respectively control the heating and cooling in an integrated manner, so that the temperature of the entire reaction chamber 10 can be adjusted more synchronously, thereby reducing the temperature difference in a local area and improving the temperature uniformity of the reaction chamber.

Further, referring to fig. 5, the plasma processing apparatus may further include a temperature sensor 60, the temperature sensor 60 being electrically connected to the heating control part 40 and the cooling supply part 50, respectively; the temperature sensor 60 is used to detect the temperature of the reaction chamber 10; the heating control part 40 is used for controlling the heating network to heat according to the temperature of the reaction chamber 10, and/or the cooling supply part 50 is used for driving the cooling liquid circulation in the communication pipeline according to the temperature of the reaction chamber 10.

The temperature sensor 60 is required to be disposed inside the reaction chamber 10, and may be disposed at a middle position of the top plate, so as to monitor the overall temperature of the reaction chamber 10. In this embodiment, the heating control unit 40 and the cooling supply unit 50 are respectively connected to the temperature sensor 60, so that feedback adjustment can be performed according to the monitored temperature of the reaction chamber 10, and the temperature of the reaction chamber 10 can meet the environmental requirements of plasma processing, thereby ensuring better plasma processing effect.

In another embodiment of the present invention, the optional first cooling portion and the second cooling portion are both cooling pipes; the first cooling part and the second cooling part respectively comprise a cooling liquid inlet and a cooling liquid outlet; the plasma processing apparatus further includes a heating control unit and a cooling supply unit; the heating control part is respectively connected with the first heating parts and the second heating parts and is used for independently controlling the first heating parts and the second heating parts to heat; the cooling supply part is respectively connected with the cooling liquid inlets and the cooling liquid outlets of the first cooling part and the second cooling part and is used for independently supplying cooling liquid to the first cooling part and the second cooling part and driving the cooling liquid to circulate.

At this moment, every first heating portion and second heating portion can heat alone, and every first cooling portion and second cooling portion can cool off alone, to reaction chamber's temperature regulation and control, and it can not only synchronous heating synchronous cooling to realize holistic temperature regulation, also can adjust the temperature of corresponding position more thinly, avoid local difference in temperature too big, improve reaction chamber's temperature homogeneity. In addition, this embodiment carries out local temperature regulation through independent control, not only can improve the temperature control fineness while, can also improve temperature regulation's power, reduces the equipment consumption.

Further, in this embodiment, the optional plasma processing apparatus further includes a plurality of temperature sensors, the plurality of temperature sensors being uniformly disposed in the reaction chamber, the plurality of temperature sensors being electrically connected to the heating control part and the cooling supply part, respectively; the temperature sensors are used for detecting the temperatures of different areas of the reaction chamber; the heating control part is used for controlling the first heating part or the second heating part at the corresponding position to heat according to the temperatures of different areas of the reaction chamber; and/or the cooling supply part is used for driving the cooling liquid circulation in the first cooling part or the second cooling part at the corresponding position according to the temperatures of different areas of the reaction chamber.

The heating control part and the cooling supply part can distinguish the positions of the temperatures detected by different temperature sensors in the reaction chamber, and store the mapping relation between different positions of the reaction chamber and the heating part and the cooling part, so as to determine the heating part or the cooling part corresponding to the positions according to the mapping relation; and then, according to the detected temperature, driving the corresponding heating part to heat or driving the corresponding cooling part to cool, and ensuring that the temperature of the position is in the target temperature range. It can be understood that the present embodiment can realize local temperature regulation, which can be applied not only in the processing stage to ensure uniformity of the plasma processing process, but also in the heating stage between the processing stages to uniformly raise the temperature of the reaction chamber between the processing stages.

In the temperature control process of the heating control unit and the cooling supply unit in this embodiment, the temperature control needs to be performed according to a preset working temperature range to ensure that the plasma processing in the reaction chamber works normally. For example, the working temperature range may involve a lower temperature limit and an upper temperature limit, and when the temperature detected by the temperature sensor is lower than the lower temperature limit, the heating control portion controls the heating portion to heat and raise the temperature; when the temperature detected by the temperature sensor is higher than the upper temperature limit, the corresponding cooling supply unit performs cooling under control to reduce the temperature.

It should be noted that, a person skilled in the art may also set a temperature range setting module in the heating control unit and the cooling supply unit, and input an operating temperature range on site through the temperature range setting module, so as to perform temperature regulation according to the operating temperature range, thereby ensuring that the plasma processing in the reaction chamber operates normally.

It is to be noted that the foregoing description is only exemplary of the invention and that the principles of the technology may be employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A plasma processing apparatus, comprising:

the reaction chamber is used for carrying out plasma reaction;

the upper electrode is arranged at the top of the reaction chamber, and the lower electrode is oppositely arranged at the bottom of the reaction chamber;

the first temperature adjusting part and the second temperature adjusting part are arranged at the top of the reaction chamber, the vertical projection of the first temperature adjusting part on the plane of the upper electrode is positioned in the upper electrode, and the vertical projection of the second temperature adjusting part on the plane of the upper electrode surrounds the upper electrode;

the first temperature adjusting part includes a plurality of first heating parts and a plurality of first cooling parts; the vertical projections of the plurality of first heating parts on the plane of the upper electrode are uniformly distributed in the upper electrode, and the vertical projections of the plurality of first cooling parts on the plane of the upper electrode are uniformly distributed in the upper electrode;

the second temperature adjusting part comprises a second heating part and a second cooling part, and the vertical projection of the second heating part and the second cooling part on the plane of the upper electrode surrounds the upper electrode.

2. The plasma processing apparatus according to claim 1, wherein a vertical projection of the plurality of first heating portions on a plane on which the upper electrode is located corresponds to a vertical projection of the plurality of first cooling portions on a plane on which the upper electrode is located, and each of the first heating portions and the first cooling portions at least partially overlap.

3. The plasma processing apparatus according to claim 2, wherein the plurality of first heating portions are arranged in an array, or the plurality of first heating portions are uniformly arranged along a circumference.

4. The plasma processing apparatus according to claim 1, wherein the first cooling portion and the second cooling portion are both cooling ducts;

two adjacent first heating parts are connected with each other, and the adjacent first heating parts and the adjacent second heating parts are connected with each other, so that the plurality of first heating parts and the plurality of second heating parts form a heating network;

5. The plasma processing apparatus according to claim 4, further comprising temperature sensors electrically connected to the heating control section and the cooling supply section, respectively;

6. The plasma processing apparatus according to claim 4, wherein the first cooling portion and the second cooling portion are both cooling ducts; the first cooling part and the second cooling part respectively comprise a cooling liquid inlet and a cooling liquid outlet;

the plasma processing apparatus further includes a heating control section and a cooling supply section; the heating control part is respectively connected with the plurality of first heating parts and the plurality of second heating parts and is used for independently controlling the first heating parts and the second heating parts to heat; the cooling supply part is connected to the cooling liquid inlet and the cooling liquid outlet of the plurality of first cooling parts and the plurality of second cooling parts, respectively, and is configured to independently supply cooling liquid to the first cooling part and the second cooling part and drive circulation of the cooling liquid.

7. The plasma processing apparatus according to claim 6, further comprising a plurality of temperature sensors uniformly disposed in the reaction chamber, the plurality of temperature sensors being electrically connected to the heating control section and the cooling supply section, respectively;

8. The plasma processing apparatus according to claim 1, wherein the first heating portion and the second heating portion are heating wires or heating plates.