CN112746318A - Beam source furnace shutter for three-state molecular beam epitaxy - Google Patents
Beam source furnace shutter for three-state molecular beam epitaxy Download PDFInfo
- Publication number
- CN112746318A CN112746318A CN202011453051.1A CN202011453051A CN112746318A CN 112746318 A CN112746318 A CN 112746318A CN 202011453051 A CN202011453051 A CN 202011453051A CN 112746318 A CN112746318 A CN 112746318A
- Authority
- CN
- China
- Prior art keywords
- shutter
- source furnace
- beam source
- state
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a beam source furnace shutter for three-state molecular beam epitaxy, which is additionally provided with a third beam source furnace protection state on the basis of two states of beam opening and beam closing, wherein the shutter in the beam source furnace protection state can effectively prevent material fragments adsorbed on the inner wall of a cold shield from falling into a beam source furnace, and has the advantages of protecting source materials in the beam source furnace from being polluted by the material fragments, optimizing the quality of an epitaxial film, effectively improving the stability and repeatability of evaporation beam, reducing the maintenance time of equipment, improving the production efficiency of the equipment and the like.
Description
Technical Field
The invention relates to semiconductor equipment, in particular to a beam source furnace shutter for three-state molecular beam epitaxy.
Background
Molecular Beam Epitaxy (MBE) is a method of preparing a single crystal thin film by ejecting each component constituting a crystal and doped atoms or molecules from a beam source furnace onto a substrate surface at a certain thermal movement speed and in a certain composition ratio for epitaxial growth in an ultra-high vacuum environment.
The beam source furnace and the beam source furnace shutters are important components of molecular beam epitaxy equipment, the beam source furnace obtains stable and controllable evaporation beam current by heating source materials in a crucible, each beam source furnace is provided with an independent beam source furnace shutter, and the beam source furnace shutters realize on-off control of the evaporation beam current through releasing or blocking. The beam source furnace shutter in the prior art is mainly divided into two forms: the linear motion shutter and the rotary motion shutter only have two states of beam opening and beam closing.
The cold shield is also one of the important components of molecular beam epitaxy equipment, and is generally cooled by liquid nitrogen, and the working temperature is about 77K: the device is used for adsorbing redundant atoms or molecules which do not participate in epitaxial growth and improving the vacuum degree in the cavity; and the second is used for absorbing redundant heat radiation from the beam source furnace heater and the sample frame heater and reducing the heat load in the cavity. However, after the molecular beam epitaxy equipment is operated for a long time, materials adsorbed on the inner wall of the cold shield are accumulated and gradually thickened, and finally material fragments which are easy to fall off are formed, and once the material fragments fall into the lower beam source furnace, the material fragments cross-contaminate source materials in the beam source furnace, the quality of an epitaxial film is influenced, evaporation beam current is also uncontrollable, and the stability and repeatability of a subsequent process are influenced.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the beam source furnace shutter for the three-state molecular beam epitaxy, which can protect source materials in the beam source furnace from being polluted by material fragments, optimize the quality of an epitaxial film and effectively improve the stability and the repeatability of evaporation beam current.
In order to solve the technical problems, the invention adopts the following technical scheme:
a beam source furnace shutter for three-state molecular beam epitaxy is provided with three states, namely a beam opening state, a beam closing state and a beam source furnace protection state; when the shutter is in a beam opening state, the shutter blades completely avoid a beam evaporation path; when the shutter is in a beam off state, the shutter blades completely block a beam evaporation path; when the shutter is in the beam source furnace protection state, the shutter blade is positioned above the furnace opening of the beam source furnace to prevent the material fragments adsorbed on the inner wall of the cold shield from falling into the beam source furnace.
As a further improvement of the above technical solution: the shutter comprises shutter blades, a shutter rod and a shutter flange, wherein the shutter blades are positioned in the vacuum chamber, the shutter rod is used for driving the shutter blades to swing up and down and stretch linearly, and the shutter flange is used for installing the shutter rod.
As a further improvement of the above technical solution: one end of the shutter rod is positioned in the vacuum chamber, and the other end of the shutter rod is positioned outside the vacuum chamber and is connected with a driving device.
As a further improvement of the above technical solution: the driving device realizes vacuum dynamic sealing through a corrugated pipe.
As a further improvement of the above technical solution: the shutter blade is made of high-temperature-resistant metal materials or ceramic materials, and the shutter rod is made of high-temperature-resistant metal materials or ceramic materials.
As a further improvement of the above technical solution: the shutter blade is fixedly connected with the shutter rod, and an included angle between the shutter blade and the shutter rod is 60-150 degrees.
Compared with the prior art, the invention has the advantages that: the beam source furnace shutter for three-state molecular beam epitaxy disclosed by the invention has the advantages that the third beam source furnace protection state is newly added on the basis of two states of beam opening and beam closing, and the shutter in the beam source furnace protection state can effectively prevent material fragments adsorbed on the inner wall of a cold shield from falling into a beam source furnace, so that the problems of easy pollution of source materials in the beam source furnace, poor quality of an epitaxial film, poor stability and repeatability of an evaporation beam in the prior art and the like are solved, the equipment maintenance time is reduced, and the equipment production efficiency is improved.
Drawings
FIG. 1 is a schematic side view of a beam source furnace shutter for three-state molecular beam epitaxy according to the present invention.
Fig. 2 is a schematic top view of the beam source furnace for three-state molecular beam epitaxy according to the present invention, when the shutter is in a beam off state.
The reference numerals in the figures denote: 1. a vacuum chamber; 21. a shutter flange; 22. a shutter lever; 23. a shutter blade; 3. a beam source furnace; 31. a beam source furnace flange; 32. a crucible; 4. a beam evaporation path; 5. cooling the screen; 6. a sample holder; 7. a substrate.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples of the specification.
Fig. 1 to 2 show an embodiment of a beam source furnace shutter for three-state molecular beam epitaxy according to the present invention, which includes a shutter blade 23 located in a vacuum chamber 1, a shutter lever 22 for driving the shutter blade 23 to swing up and down and to linearly extend and retract, and a shutter flange 21 for mounting the shutter lever 22. The shutter blade 23 may be in a suitable shape such as a circle, an ellipse, a droplet, a square, a diamond, or a polygon.
In the shutter of the beam source furnace for three-state molecular beam epitaxy, the shutter blade 23 can be driven by the shutter rod 22 to swing and stretch, when the shutter blade 23 completely avoids the beam evaporation path 4 (shown as the position I in fig. 1), the shutter blade is in a beam opening state, and when the shutter blade 23 completely blocks the beam evaporation path 4 (shown as the position II in fig. 1), the shutter blade is in a beam closing state. In addition, the shutter blade 23 can further move to the position (shown as the position (c) in fig. 1) above the furnace mouth of the beam source furnace 3, namely, the shutter blade 23 is in the protection state of the beam source furnace 3, and at the moment, the shutter blade 23 can prevent the material fragments adsorbed on the inner wall of the cold shield 5 from falling into the beam source furnace 3, so that the source material in the beam source furnace 3 is protected from being polluted by the material fragments, the quality of an epitaxial film is optimized, meanwhile, the stability and the repeatability of evaporation beam current are effectively improved, the equipment maintenance time is reduced, and the equipment production efficiency is improved.
Further, in the present embodiment, one end of the shutter rod 22 is located inside the vacuum chamber 1, and the other end of the shutter rod 22 is located outside the vacuum chamber 1 and is connected to a driving device (not shown in the figure, for example, it may be pneumatic, electric, or manual).
Preferably, the driving device realizes vacuum dynamic sealing through a bellows (not shown in the figure).
As a preferable technical solution, the shutter blade 23 is made of a high temperature resistant metal material (e.g. tantalum, molybdenum, etc.) or a ceramic material (e.g. Al)2O3PBN, etc.), the shutter lever 22 is made of a high temperature resistant metal material (e.g., tantalum, molybdenum, etc.) or a ceramic material (e.g., Al)2O3PBN, etc.).
As a preferred technical scheme, the shutter blade 23 is fixedly connected with the shutter rod 22, and the included angle between the shutter blade 23 and the shutter rod 22 is 60-150 degrees (or other suitable angles), so that the shutter blade 23 can effectively prevent material fragments adsorbed on the inner wall of the cold shield 5 from falling into the beam source furnace 3 when in the third position, can effectively shield the beam evaporation path 4 when in the second position, and can effectively avoid the beam evaporation path 4 when in the first position.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (6)
1. A beam source furnace shutter for three-state molecular beam epitaxy is characterized in that: the method has three states: a beam opening state, a beam closing state and a beam source furnace protection state; when the shutter is in a beam opening state, the shutter blades (23) completely avoid the beam evaporation path (4); when the shutter is in a beam off state, the shutter blades (23) completely block the beam evaporation path (4); when the shutter is in a beam source furnace protection state, the shutter blade (23) is positioned above a furnace opening of the beam source furnace (3) to prevent the material fragments adsorbed on the inner wall of the cold shield (5) from falling into the beam source furnace (3).
2. The beam source furnace shutter for three-state molecular beam epitaxy of claim 1, wherein: the device comprises shutter blades (23) positioned in a vacuum chamber (1), a shutter rod (22) used for driving the shutter blades (23) to swing up and down and linearly stretch and retract, and a shutter flange (21) used for installing the shutter rod (22).
3. The beam source furnace shutter for three-state molecular beam epitaxy of claim 2, wherein: one end of the shutter rod (22) is positioned in the vacuum chamber (1), and the other end of the shutter rod (22) is positioned outside the vacuum chamber (1) and is connected with a driving device.
4. The beam source furnace shutter for three-state molecular beam epitaxy of claim 3, wherein: the driving device realizes vacuum dynamic sealing through a corrugated pipe.
5. The beam source furnace shutter for three-state molecular beam epitaxy of claim 4, wherein: the shutter blade (23) is made of high-temperature-resistant metal materials or ceramic materials, and the shutter rod (22) is made of high-temperature-resistant metal materials or ceramic materials.
6. The beam source furnace shutter for three-state molecular beam epitaxy of claim 5, wherein: the shutter blades (23) are fixedly connected with the shutter rod (22), and an included angle between each shutter blade (23) and the shutter rod (22) is 60-150 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011453051.1A CN112746318B (en) | 2020-12-11 | 2020-12-11 | Beam source furnace shutter for three-state molecular beam epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011453051.1A CN112746318B (en) | 2020-12-11 | 2020-12-11 | Beam source furnace shutter for three-state molecular beam epitaxy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112746318A true CN112746318A (en) | 2021-05-04 |
| CN112746318B CN112746318B (en) | 2022-02-18 |
Family
ID=75649186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011453051.1A Active CN112746318B (en) | 2020-12-11 | 2020-12-11 | Beam source furnace shutter for three-state molecular beam epitaxy |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112746318B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113463189A (en) * | 2021-06-21 | 2021-10-01 | 湖南烁科晶磊半导体科技有限公司 | Double-shutter molecular beam epitaxy source furnace system and molecular beam epitaxy equipment |
| CN113928872A (en) * | 2021-09-27 | 2022-01-14 | 中国电子科技集团公司第十一研究所 | Material slag collecting device for molecular beam epitaxy equipment |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62115820A (en) * | 1985-11-15 | 1987-05-27 | Agency Of Ind Science & Technol | Molecular beam crystal growth device |
| CN102534511A (en) * | 2012-02-28 | 2012-07-04 | 东北大学 | Film vapor deposition device and application method thereof |
| CN103103480A (en) * | 2011-11-15 | 2013-05-15 | 中国科学院物理研究所 | Film deposition equipment and film deposition method |
| CN205386377U (en) * | 2015-12-17 | 2016-07-20 | 江西冠能光电材料有限公司 | Organic material quick -witted adjustable fender that purifys |
| CN106298577A (en) * | 2016-10-18 | 2017-01-04 | 中国工程物理研究院激光聚变研究中心 | A kind of method of monocrystal thin films sedimentation rate on-line determination and application |
| CN108165946A (en) * | 2018-02-02 | 2018-06-15 | 深圳华远微电科技有限公司 | A kind of Ion Cleaning magnetic control sputtering system |
| CN208201096U (en) * | 2018-04-02 | 2018-12-07 | 杭州赛威斯真空技术有限公司 | Organic matter electron gun furnace for organic matter evaporation coating machine |
-
2020
- 2020-12-11 CN CN202011453051.1A patent/CN112746318B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62115820A (en) * | 1985-11-15 | 1987-05-27 | Agency Of Ind Science & Technol | Molecular beam crystal growth device |
| CN103103480A (en) * | 2011-11-15 | 2013-05-15 | 中国科学院物理研究所 | Film deposition equipment and film deposition method |
| CN102534511A (en) * | 2012-02-28 | 2012-07-04 | 东北大学 | Film vapor deposition device and application method thereof |
| CN205386377U (en) * | 2015-12-17 | 2016-07-20 | 江西冠能光电材料有限公司 | Organic material quick -witted adjustable fender that purifys |
| CN106298577A (en) * | 2016-10-18 | 2017-01-04 | 中国工程物理研究院激光聚变研究中心 | A kind of method of monocrystal thin films sedimentation rate on-line determination and application |
| CN108165946A (en) * | 2018-02-02 | 2018-06-15 | 深圳华远微电科技有限公司 | A kind of Ion Cleaning magnetic control sputtering system |
| CN208201096U (en) * | 2018-04-02 | 2018-12-07 | 杭州赛威斯真空技术有限公司 | Organic matter electron gun furnace for organic matter evaporation coating machine |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113463189A (en) * | 2021-06-21 | 2021-10-01 | 湖南烁科晶磊半导体科技有限公司 | Double-shutter molecular beam epitaxy source furnace system and molecular beam epitaxy equipment |
| CN113928872A (en) * | 2021-09-27 | 2022-01-14 | 中国电子科技集团公司第十一研究所 | Material slag collecting device for molecular beam epitaxy equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112746318B (en) | 2022-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112746318B (en) | Beam source furnace shutter for three-state molecular beam epitaxy | |
| CN1067446C (en) | Superhigh vacuum chemical vapor phase deposition epitoxy system | |
| CN109652762B (en) | Preparation method of antimony-sulfur-selenium alloy film | |
| EP4190946A1 (en) | Crucible movable beam source furnace for molecular-beam epitaxy | |
| TW201807225A (en) | Deposition systems including effusion sources, and related methods | |
| US9458553B2 (en) | Method for growing GZO (ZnO:Ga) crystals | |
| CN102051589B (en) | Method for preparing amorphous silicon carbide film and epitaxial film at low temperature | |
| CN103215646A (en) | Novel production method of c-orientation sapphire single crystal | |
| US20220307156A1 (en) | Single Crystal Pulling Apparatus Hot-Zone Structure, Single Crystal Pulling Apparatus and Crystal Ingot | |
| CN109928640B (en) | Inorganic lead-cesium halide nanocrystalline composite chalcogenide glass ceramic material and preparation method thereof | |
| CN106830081B (en) | A kind of MoO2The preparation method of nanometer rods | |
| CN102312293B (en) | Method for growing large size Ta2O5 single crystal by using floating zone method | |
| CN204325549U (en) | A kind of silicon carbide crystal growing device | |
| CN102618269A (en) | Method for preparing nano luminescent material with CdS/Sn alloplasmic structure | |
| CN100434573C (en) | Method for developing aluminum nitride crystal in large size through flow of plasma flame | |
| CN102605420A (en) | Full-angle view window of kyropoulos method mono-crystal furnace | |
| CN113463189A (en) | Double-shutter molecular beam epitaxy source furnace system and molecular beam epitaxy equipment | |
| CN219363869U (en) | Beam mechanical controllable molecular beam epitaxy metal element source furnace with valve block | |
| CN102097314B (en) | Laser heat treatment device and method for accurately controlling cooling process | |
| CN1259468C (en) | Crystal semiconductor material series A2 MM'3 Q6 | |
| CN110904510A (en) | Single crystal furnace for InSb crystal growth | |
| CN105543795A (en) | Growing method for polycrystalline silicon carbide thin film | |
| CN110158151A (en) | For the crucible cover of silicon carbide monocrystal growth, crucible and the method for crystal growth | |
| CN101962801B (en) | Method for rapidly growing Nb205 crystal | |
| CN100427641C (en) | Superhigh vacuum chemical vapor deposition epitoxy system with rotary lining |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |