CN112736176B - Method for improving luminous efficiency of light-emitting diode - Google Patents
Method for improving luminous efficiency of light-emitting diode Download PDFInfo
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- CN112736176B CN112736176B CN201910975239.3A CN201910975239A CN112736176B CN 112736176 B CN112736176 B CN 112736176B CN 201910975239 A CN201910975239 A CN 201910975239A CN 112736176 B CN112736176 B CN 112736176B
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- transparent electrode
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 41
- 239000002019 doping agent Substances 0.000 claims abstract description 38
- 238000002347 injection Methods 0.000 claims abstract description 13
- 239000007924 injection Substances 0.000 claims abstract description 13
- 238000012546 transfer Methods 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- 239000007772 electrode material Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000002086 nanomaterial Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 239000002356 single layer Substances 0.000 description 5
- 239000002238 carbon nanotube film Substances 0.000 description 4
- -1 oxides Chemical class 0.000 description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- VASOMTXTRMYSKD-UHFFFAOYSA-N (2,3,4,5,6-pentafluorophenyl)boronic acid Chemical compound OB(O)C1=C(F)C(F)=C(F)C(F)=C1F VASOMTXTRMYSKD-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to the field of manufacturing of light-emitting diodes, in particular to a method for improving the light-emitting efficiency of a light-emitting diode through an anti-reflection type dopant thin film. According to the method, the anti-reflection type dopant film is introduced between the transparent electrode and the light emitting layer, and the light outcoupling efficiency and the charge injection efficiency of the transparent electrode are improved through the anti-reflection type dopant film, so that the light emitting efficiency of the light emitting diode is improved: an anti-reflection type dopant film is formed on the surface of the transparent electrode, and the optical anti-reflection effect of the film is utilized to promote the waveguide mode to be coupled into the transparent electrode, so that the light-emitting rate of the light-emitting diode is improved; and simultaneously, the transparent electrode is doped by utilizing the surface charge transfer effect of the film so as to improve the work function of the transparent electrode, thereby improving the charge injection efficiency of the electrode. The method does not need to use a complex micro-nano structure, has high compatibility with the manufacturing process of the light-emitting diode, and provides a simple and effective technical approach for developing the high-performance light-emitting diode.
Description
The technical field is as follows:
the invention relates to the field of manufacturing of light-emitting diodes, in particular to a method for improving the light-emitting efficiency of a light-emitting diode through an anti-reflection type dopant thin film, which is suitable for various electroluminescent diodes comprising a light-emitting layer and a transparent electrode structure.
Background art:
light emitting diodes have increasingly wide application in the fields of display and illumination. The transparent electrode is an important component of the light emitting diode, and has a crucial influence on both light outcoupling and charge injection of the light emitting diode, thereby significantly affecting the light emitting efficiency of the device. The prior art is mainly directed to the improvement of a single property, such as: the micro-nano structure is adopted to improve the outcoupling efficiency of a waveguide mode or a substrate mode, and the chemical dopant is adopted to improve the work function and the conductivity of the transparent electrode so as to promote charge injection. However, how to improve the performance of both aspects and achieve a great increase in the light emitting efficiency is still a difficult problem to be solved in the art.
The invention content is as follows:
the invention aims to provide a method for improving the luminous efficiency of a light-emitting diode, which introduces an anti-reflection type dopant film between a transparent electrode and a luminous layer, and improves the light outcoupling efficiency and the charge injection efficiency of the transparent electrode simultaneously through the anti-reflection type dopant film, thereby greatly improving the luminous efficiency of the light-emitting diode.
The technical scheme of the invention is as follows:
a method for improving the luminous efficiency of a light-emitting diode is characterized in that an anti-reflection type dopant film is introduced between a transparent electrode and a luminous layer, and the light outcoupling efficiency and the charge injection efficiency of the transparent electrode are improved simultaneously through the anti-reflection type dopant film, so that the luminous efficiency of the light-emitting diode is improved: an anti-reflection type dopant film is formed on the surface of the transparent electrode, and the optical anti-reflection effect of the film is utilized to promote the waveguide mode to be coupled into the transparent electrode, so that the light-emitting rate of the light-emitting diode is improved; and simultaneously, the transparent electrode is doped by utilizing the surface charge transfer effect of the film so as to improve the work function of the transparent electrode, thereby improving the charge injection efficiency of the electrode.
In the method for improving the luminous efficiency of the light-emitting diode, the dopant is an inorganic substance, an organic substance or a combination of the inorganic substance and the organic substance, and includes but is not limited to one or more of acids, oxides, chlorides, organic substances of alkali metals and high molecular polymers.
The method for improving the luminous efficiency of the light-emitting diode has the advantages that the refractive index of the anti-reflection type dopant film is lower than that of the transparent electrode and the transparent substrate, and the light transmittance is high and ranges from 80% to 100%.
In the method for improving the luminous efficiency of the light-emitting diode, the anti-reflection type dopant forms a continuous film on the surface of the transparent electrode, and the thickness of the film is 1-1000 nanometers.
In the method for improving the luminous efficiency of the light-emitting diode, the doping principle of the anti-reflection type dopant is surface charge transfer, namely, after the dopant is contacted with the surface of the transparent electrode, the dopant and the transparent electrode generate charge transfer, so that the transparent electrode material is doped; the doping type is either p-type or n-type.
The method for improving the luminous efficiency of the light-emitting diode is characterized in that the method for forming the anti-reflection type dopant thin film on the surface of the transparent electrode comprises one or the combination of more than two of physical vapor deposition, chemical vapor deposition, solution soaking, pulling, spin coating, spray coating, blade coating, wire rod coating, printing and roll coating.
In the method for improving the luminous efficiency of the light emitting diode, the transparent electrode material is an inorganic substance or an organic substance, including but not limited to graphene, carbon nanotubes or a conductive polymer.
In the method for improving the luminous efficiency of the light-emitting diode, the transparent electrode is formed on the surface of the transparent substrate by adopting a transferring, depositing or coating method, and the transparent substrate is made of rigid or flexible materials including but not limited to glass, quartz or flexible transparent organic matters.
The design idea of the invention is as follows:
the invention adopts the anti-reflection type dopant film, and organically combines the electrical modulation of the dopant with the optical modulation of the anti-reflection film to realize the photoelectric co-modulation of the light emitting process of the light emitting diode, thereby simultaneously improving the charge injection efficiency and the light outcoupling efficiency of the transparent electrode.
The invention has the characteristics and beneficial effects that:
1. the invention breaks through the limitation that the existing method only improves single performance, realizes the synchronous improvement of the waveguide mode outcoupling efficiency and the charge injection efficiency of the transparent electrode, and greatly improves the luminous efficiency of the light-emitting diode.
2. The method of the invention does not need to use a complex micro-nano structure, has simple process and high compatibility with the manufacturing process of the light-emitting diode.
Description of the drawings:
fig. 1 is a schematic view of a bottom emission structure of a light emitting diode in embodiment 1. In the figure, 101 a polyethylene terephthalate (PET) transparent substrate, 102 a single layer of graphene, 103 an anti-reflection dopant film, 104 a light emitting layer, 105 an aluminum film.
Fig. 2 is a schematic diagram of a top-emission structure of the light emitting diode in embodiment 2. In the figure, a glass transparent substrate 201, an aluminum film 202, a luminescent layer 203, a pentafluorophenylboronic acid film 204, and a carbon nanotube film 205 are shown.
The specific implementation mode is as follows:
the present invention will be described in further detail below with reference to examples.
Example 1
As shown in fig. 1, in the present embodiment, the light emitting diode is a bottom emission structure, and the anode uses a single layer of graphene 102 on the surface of a polyethylene terephthalate (PET) transparent substrate 101 as a transparent electrode. An anti-reflection type dopant film 103 (with a thickness of 10 nm) is used between the anode and the light-emitting layer 104, the composition of the film is tetrafluorophenyl boric acid or other p-type dopant with anti-reflection effect and light transmittance of 80-100%, the cathode adopts an aluminum film 105 (with a thickness of 100 nm), and the aluminum film 105 is positioned on the light-emitting layer 104. And sequentially forming an anti-reflection type dopant film, a light-emitting layer and an aluminum film cathode on the surface of the single-layer graphene anode. The light emitting diode has the advantages that the light emitting rate of the light emitting layer on the anode side and the hole injection efficiency of the anode to the light emitting layer are improved simultaneously, and the external quantum efficiency of the light emitting diode is 29%.
Example 2
The difference from the example 1 is that:
as shown in fig. 2, in this embodiment, the light emitting diode is a top-emission structure, an aluminum thin film 202 (with a thickness of 150 nm) on the surface of a glass transparent substrate 201 is used as a bottom transparent cathode, and a carbon nanotube thin film 205 (with a thickness of 10 nm) is used as a top transparent anode. And sequentially forming a luminescent layer 203, a tetrapentafluorophenylboronic acid film 204 and a carbon nanotube film transparent anode on the surface of the aluminum film cathode, wherein the external quantum efficiency of the light-emitting diode is 20%.
Example 3
The difference from the embodiment 1 is that:
in this embodiment, the light emitting diode has a fully transparent structure, the anode uses single-layer graphene on the surface of a polyethylene terephthalate (PET) transparent substrate as a transparent electrode, and the cathode uses a carbon nanotube film (with a thickness of 8 nm). A tetrafluorophenyl boric acid film, a light-emitting layer and a carbon nano tube film cathode are sequentially formed on the surface of a single-layer graphene anode, and the external quantum efficiency of the light-emitting diode reaches 30%.
The embodiment result shows that the anti-reflection type dopant film is introduced between the transparent electrode and the light-emitting layer, and the light outcoupling efficiency and the charge injection efficiency of the transparent electrode are improved simultaneously through the anti-reflection type dopant film, so that the light-emitting efficiency of the light-emitting diode is improved. The method does not need to use a complex micro-nano structure, has high compatibility with the manufacturing process of the light-emitting diode, and provides a simple and effective technical approach for developing the high-performance light-emitting diode.
Claims (8)
1. A method for improving the luminous efficiency of a light-emitting diode is characterized in that an anti-reflection type dopant film is introduced between a transparent electrode and a luminous layer, and the light outcoupling efficiency and the charge injection efficiency of the transparent electrode are improved simultaneously through the anti-reflection type dopant film, so that the luminous efficiency of the light-emitting diode is improved: an anti-reflection type dopant film is formed on the surface of the transparent electrode, and the optical anti-reflection effect of the film is utilized to promote the waveguide mode to be coupled into the transparent electrode, so that the light-emitting rate of the light-emitting diode is improved; simultaneously, the transparent electrode is doped by utilizing the surface charge transfer function of the film so as to improve the work function of the transparent electrode, thereby improving the charge injection efficiency of the electrode;
forming a continuous film with the anti-reflection type dopant on the surface of the transparent electrode, wherein the thickness range of the continuous film is 1 to 1000 nanometers; the anti-reflection type dopant film has a refractive index lower than that of the transparent electrode and the transparent substrate, and has high light transmittance within a light transmittance range of 80 to 100 percent; wherein, the transparent substrate and the anti-reflection type dopant film are respectively positioned at two sides of the transparent electrode;
the doping principle of the anti-reflection dopant is surface charge transfer, namely, after the dopant is contacted with the surface of the transparent electrode, charge transfer is generated between the dopant and the surface of the transparent electrode, so that the transparent electrode material is doped; the doping type is p-type or n-type.
2. The method of claim 1, wherein the dopant is inorganic, organic, or a combination thereof.
3. The method of claim 2, wherein the dopant comprises one or more of an acid, an oxide, a chloride, an organic compound of an alkali metal, and a high molecular polymer.
4. The method of claim 1, wherein the step of forming the anti-reflection type dopant thin film on the surface of the transparent electrode comprises one or more of physical vapor deposition, chemical vapor deposition, solution dipping, drawing, spin coating, spray coating, blade coating, wire bar coating, printing, and roll coating.
5. The method of claim 1, wherein the transparent electrode material is inorganic or organic.
6. The method of claim 5, wherein the transparent electrode material comprises graphene, carbon nanotubes, or a conductive polymer.
7. The method of claim 1, wherein the transparent electrode is formed on the surface of the transparent substrate by transfer, deposition or coating, and the transparent substrate is rigid or flexible.
8. The method of claim 7, wherein the transparent substrate material comprises glass, quartz or a flexible transparent organic.
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| CN109216521A (en) * | 2018-10-30 | 2019-01-15 | 扬州乾照光电有限公司 | A kind of preparation method and LED chip of LED chip |
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| KR101342664B1 (en) * | 2012-02-01 | 2013-12-17 | 삼성전자주식회사 | Light emitting diode for emitting ultraviolet |
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| CN103682152A (en) * | 2012-09-25 | 2014-03-26 | 国际商业机器公司 | Transparent conductive electrode and forming method therefor, organic light emitting diode (OLED) device and forming method therefor |
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| CN103345963B (en) * | 2013-06-28 | 2015-07-15 | 重庆墨希科技有限公司 | Graphene composite transparent electrode and preparation method and application thereof |
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| CN107785466A (en) * | 2016-08-26 | 2018-03-09 | 中国科学院金属研究所 | A kind of transparency LED based on Graphene electrodes and preparation method thereof |
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| CN1581518A (en) * | 2003-08-01 | 2005-02-16 | 厦门三安电子有限公司 | Surface anti-reflection light-emitting diode |
| CN105449059A (en) * | 2015-11-24 | 2016-03-30 | 山东浪潮华光光电子股份有限公司 | GaN-based LED chip with current-expanding antireflection film layers, and preparation method for GaN-based LED chip |
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