CN112717685A - Purifying agent for removing trace impurities in high-purity gas and preparation method and application thereof - Google Patents

Purifying agent for removing trace impurities in high-purity gas and preparation method and application thereof Download PDF

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CN112717685A
CN112717685A CN202011508500.8A CN202011508500A CN112717685A CN 112717685 A CN112717685 A CN 112717685A CN 202011508500 A CN202011508500 A CN 202011508500A CN 112717685 A CN112717685 A CN 112717685A
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purifying agent
active component
purity gas
trace impurities
removing trace
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CN112717685B (en
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杜霞茹
徐卫
侯蕾
李楠
于志日
肖菲
吴熠
李宏涛
刘振峰
刘金刚
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Dalian Samat Chemicals Co ltd
DALIAN CATALYTIC ENGINEERING TECHNOLOGY Ltd
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Dalian Samat Chemicals Co ltd
DALIAN CATALYTIC ENGINEERING TECHNOLOGY Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/74General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/86Catalytic processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/26Drying gases or vapours
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/46Removing components of defined structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/46Removing components of defined structure
    • B01D53/62Carbon oxides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D53/00Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34Chemical or biological purification of waste gases
    • B01D53/74General processes for purification of waste gases; Apparatus or devices specially adapted therefor
    • B01D53/86Catalytic processes
    • B01D53/8671Removing components of defined structure not provided for in B01D53/8603 - B01D53/8668
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    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/002Mixed oxides other than spinels, e.g. perovskite
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/889Manganese, technetium or rhenium
    • B01J23/8892Manganese
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J23/00Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
    • B01J23/70Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
    • B01J23/76Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
    • B01J23/84Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
    • B01J23/889Manganese, technetium or rhenium
    • B01J23/8898Manganese, technetium or rhenium containing also molybdenum
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2257/00Components to be removed
    • B01D2257/10Single element gases other than halogens
    • B01D2257/104Oxygen
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2257/00Components to be removed
    • B01D2257/10Single element gases other than halogens
    • B01D2257/108Hydrogen
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2257/00Components to be removed
    • B01D2257/50Carbon oxides
    • B01D2257/502Carbon monoxide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2257/00Components to be removed
    • B01D2257/50Carbon oxides
    • B01D2257/504Carbon dioxide
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D2257/00Components to be removed
    • B01D2257/80Water
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2523/00Constitutive chemical elements of heterogeneous catalysts

Abstract

The invention relates to a gas purification technology in chemical industry, in particular to a purifying agent for removing trace impurities in high-purity gas by a one-step method, a preparation method and application thereof. The purifying agent consists of an active component, a carrier and a binder; wherein, the active component accounts for 60 to 90 percent of the total weight of the catalyst, the carrier accounts for 9 to 20 percent of the total weight of the catalyst, and the binder accounts for 1 to 20 percent of the total weight of the catalyst; the active components are three or more compounds of Ni, Cu, Mn, Fe and Mo, and the carrier is SiO2Or SiO2A composite oxide with MOx. Book (I)The product of the invention is suitable for purifying nitrogen, hydrogen, oxygen, argon, helium, methane and organic gas, can be widely applied to the industries of semiconductors, optical fibers, steel and petrochemical industry, has high impurity removal capacity and long service life, and is suitable for large-scale industrial use.

Description

Purifying agent for removing trace impurities in high-purity gas and preparation method and application thereof
Technical Field
The invention relates to a gas purification technology in chemical industry, in particular to a purifying agent for removing trace impurities in high-purity gas by a one-step method, a preparation method and application thereof.
Background
The high-purity gas can be used as carrier gas and protective gas in the manufacturing and production processes of large-scale integrated circuits, liquid crystal displays, polycrystalline silicon and thin-film solar cells, novel electric light sources, photoelectric semiconductor devices and optical fiber communication devices so as to manufacture electronic elements with reliable performance. The purity of the industrially produced high-purity gas usually contains 5N (99.999%) or even 4N (99.99%), and also contains impurities such as hydrogen, oxygen, carbon monoxide, carbon dioxide, water and the like, and the high-purity gas needs to be purified and removed until the gas purity reaches 7N (99.99999%) to meet the requirements of manufacturing electronic devices.
The purificant/catalyst used in the related patent literature and industrial production for removing impurities is divided into two categories, the first category is catalytic deoxidizer, the working principle is that hydrogen or carbon monoxide in a gas source is utilized to generate chemical reaction under the action of the catalyst to generate water or carbon dioxide, then the traditional adsorbents such as molecular sieve, silica gel and alumina are used for dehydration, and finally the 13X molecular sieve is used for removing carbon dioxide. The purification process needs three purification materials, uses three purification devices and occupies a large area. The second category is metal getters, usually based on titanium, which react with many elements and compounds at high temperatures of 300-. The method has the problems of high operation temperature, low safety, low capacity, high cost and the like. Therefore, it is necessary to develop a purifying agent capable of removing trace impurities in high-purity gas in one step.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provides a purifying agent for removing trace impurities in high-purity gas by a one-step method and a preparation method and application thereof.
In order to achieve the purpose, the invention adopts the technical scheme that:
a purifying agent for removing trace impurities in high-purity gas consists of active components, a carrier and a binder; wherein, the active component accounts for 60 to 90 percent of the total weight of the catalyst, the carrier accounts for 9 to 20 percent of the total weight of the catalyst, and the binder accounts for 1 to 20 percent of the total weight of the catalyst; the active components are three or more compounds of Ni, Cu, Mn, Fe and Mo, and the carrier is SiO2Or SiO2A composite oxide with MOx.
The active component is Cu/Ni with the weight ratio of 0.1-1.6; the weight ratio of Mn to Ni is 0.2-1.8; the weight ratio of Mo to Ni is 0.01-0.35; the weight ratio of Fe/Ni is 0.05-1.
M in the MOx is Al or Ti, and x is 1-2.
The carrier SiO2Is SiO2One or more of powder, silica sol and diatomite.
The binder is one or more of kaolin, high alumina cement, pseudo-boehmite or silica sol.
A preparation method of a purifying agent for removing trace impurities in high-purity gas,
(1) mixing and dissolving soluble metal salt of an active component precursor in deionized water, adding a carrier under the condition of stirring, and heating to 60-85 ℃ for later use;
(2) adding a sodium carbonate solution into the system in the step (1) under the condition of stirring until the pH value of the system is 8-10, and then aging for 1-8 hours at the temperature of 60-85 ℃;
(3) centrifuging the aged system, collecting precipitate, dispersing the precipitate in water of 60-85 deg.C, repeatedly washing to neutrality, drying, and roasting to obtain active component powder;
(4) and fully mixing the obtained active component powder with a binder, and airing and roasting overnight at room temperature to obtain the purifying agent.
The soluble metal salt of the active component precursor in the step (1) comprises nickel nitrate/nickel acetate, manganese nitrate/manganese acetate and ferric nitrate/ferric acetate; cobalt nitrate/acetate, ammonium molybdate;
collecting the precipitate, drying the precipitate at a low temperature of between 80 and 150 ℃, and roasting the precipitate at a temperature of between 300 and 500 ℃ for 2 to 4 hours to obtain active component powder;
and (4) fully mixing the powder and the binder in the step (4), forming, drying overnight at room temperature, roasting at the temperature of 300 ℃ and 500 ℃ for 2-4 hours, and cooling to room temperature to obtain the high-performance high-temperature-resistant high-performance high-temperature.
The application of a purifying agent for removing trace impurities in high-purity gas, wherein the purifying agent is applied to the purification of nitrogen, hydrogen, oxygen, argon, helium, methane and organic gas.
The application method of the purifying agent comprises the steps of activating the purifying agent by using hydrogen-containing atmosphere before use, removing gas to be treated containing impurities of oxygen, hydrogen, carbon monoxide, carbon dioxide and water through a purifying agent bed layer, and reducing and regenerating the purifying agent when the impurity content at the outlet of the purifying agent bed layer exceeds 10 ppb. The purifying agent of the invention can be reduced and regenerated on site and can be reused.
The invention has the beneficial effects that:
1. the purifying agent of the invention adopts the domestic metal mineral resources with rich resources as the raw materials, and the price is low, thus having stronger market competitiveness.
2. The purifying agent of the present invention can eliminate high impurity in one stepTrace amount of pure gas H2、O2、CO、CO2、H2O and other impurities are removed to 1ppb at room temperature, and the requirements of the semiconductor industry, the electronic industry, the steel industry and the chemical industry on the content of the impurities in the high-purity gas are met.
3. The purifying agent has high impurity removing capacity and high removing precision, can be repeatedly regenerated and used, can effectively purify various impurities in one operation unit, simplifies the gas purification process and reduces the operation energy consumption. Can be widely applied to the purification of bulk gases such as oxygen, hydrogen, helium, argon, nitrogen and the like and organic gases such as low-carbon small-molecular hydrocarbons such as methane, ethylene, propylene and the like.
Detailed Description
The following examples are presented to further illustrate embodiments of the present invention, and it should be understood that the embodiments described herein are for purposes of illustration and explanation only and are not intended to limit the invention.
Example 1
Taking 106gCu (NO)3)2.3H2O、1012gNi(NO3)2.6H2O、138gMn(NO3)2(50 wt.%) and 126gFe (NO)3)3.9H2Dissolving O in 2600ml deionized water, adding 69g metatitanic acid (less than 200 meshes) and 60g SiO while stirring2Forming suspension A (smaller than 200 meshes), and heating to 70 ℃ for later use; preparing 2mol/L sodium carbonate solution B; and dripping the suspension A into the suspension B under the stirring state until the pH value is 9, aging for 1 hour at 70 ℃, filtering, washing, drying, and roasting for 2 hours at 300 ℃ to obtain active component powder.
The powder obtained above was ground to 300 mesh or less, and 67ml (28% SiO) was added2pH value of 8),25g of pseudo-thin powder are fully and uniformly mixed, extruded by a strip extruder to be formed, kept stand in the air and dried, roasted at 300 ℃ for 4 hours and naturally cooled to room temperature for later use.
Example 2
Taking 152gCu (NO)3)2.3H2O、1265gNi(NO3)2.6H2O、378gMn(NO3)2Dissolving 50 wt% of the mixture in 2500ml of deionized water, adding 50g of diatomite (smaller than 200 meshes) while stirring to form a suspension A, and heating to 80 ℃ for later use; preparing 2mol/L sodium carbonate solution B; and dripping the solution B into the solution A under the stirring state until the pH value is 9, aging for 5 hours at 80 ℃, then filtering, washing, drying, and roasting for 4 hours at 300 ℃ to obtain active component powder.
Grinding the obtained powder to below 300 meshes, adding 85g of kaolin, fully and uniformly mixing, rolling and molding by using a sugar coating machine, standing in air, airing, roasting at 300 ℃ for 4 hours, and naturally cooling to room temperature for later use.
Example 3
Take 455gCu (NO)3)2.3H2O、389gNi(NO3)2.6H2O、441gMn(NO3)2(50 wt.%) was dissolved in 2300ml of deionized water, and 268ml of an alkaline silica sol (28% SiO) was added with stirring2pH value of 8) to form a suspension A, and heating to 70 ℃; preparing 2mol/L sodium carbonate solution B; and dripping the solution B into the solution A under the stirring state until the pH value is 9, aging for 8 hours at 70 ℃, then filtering, washing, drying, and roasting for 3 hours at 450 ℃ to obtain active component powder.
The powder obtained above was ground to 300 mesh or less, and 50g of diatomaceous earth (SiO) was added2Content is more than or equal to 90 percent), 75g of pseudo-thin powder is fully and uniformly mixed, rolled and molded by a sugar coating machine, kept stand in air and dried, roasted at 450 ℃ for 4 hours and naturally cooled to room temperature for later use.
Example 4
Take 61g (NH)4)6Mo7O24.4H2O、304gCu(NO3)2.3H2O、584g Ni(NO3)2.6H2O、315gMn(NO3)2(50 wt.%) was dissolved in 2400ml of deionized water and 25g of TiO was added with stirring2179ml of alkaline silica sol (28% SiO)2pH value of 8) to form a suspension A, and heating to 60 ℃; preparing 2mol/L sodium carbonate solution B; dripping solution A into solution B under stirring to pH 8, aging at 60 deg.C for 1 hr, filtering, washing, oven drying, and calcining at 500 deg.CActive ingredient powder was obtained in 2 hours.
The powder obtained above was ground to 300 mesh or less, and 50g of diatomaceous earth (SiO) was added2Content is more than or equal to 90 percent), 105g of high-alumina cement is fully and uniformly mixed, rolled and molded by a sugar coating machine, kept stand in the air and dried, roasted at 500 ℃ for 4 hours and naturally cooled to room temperature for later use.
Example 5
Taking 379gFe (NO)3)3.9H2O、76gCu(NO3)2.3H2O、292gNi(NO3)2.6H2O、694gMn(NO3)2(50 wt%) was dissolved in 2000ml of deionized water, and 45g of pseudo-thin powder and 25g of SiO were added under stirring2Forming a suspension A and heating to 70 ℃; preparing 2mol/L sodium carbonate solution B; and dripping the solution B into the solution A under the stirring state until the pH value is 8.5, aging for 3 hours at 70 ℃, then filtering, washing, drying, and roasting for 2 hours at 350 ℃ to obtain active component powder.
100ml (28% SiO) are added2pH value of 8),50g of metatitanic acid are fully and uniformly mixed, extruded by a bar extruder for forming, kept stand in air and dried, roasted at 350 ℃ for 4 hours, and naturally cooled to room temperature for later use.
Example 6
Taking 227gCu (NO)3)2.3H2O、265gNi(NO3)2.6H2O、189gMn(NO3)2(50 wt.%) was dissolved in 1400ml of deionized water, and 89ml of an alkaline silica sol (28% SiO) was added with stirring2pH value of 8) to form a suspension A, and heating to 85 ℃; preparing 2mol/L sodium carbonate solution B; and dripping the solution B into the solution A under the stirring state until the pH value is 9, aging for 4 hours at 85 ℃, then filtering, washing, drying, and roasting for 3 hours at 400 ℃ to obtain active component powder.
The powder obtained above was ground to 300 mesh or less, and 50g of diatomaceous earth (SiO) was added2Content is more than or equal to 90 percent), 75g of pseudo-thin powder is fully and uniformly mixed, rolled and molded by a sugar coating machine, kept stand in the air and dried, roasted at 400 ℃ for 4 hours and naturally cooled to room temperature for later use.
Example 7
The purifiers of examples 1 to 6 were measured for impurity removal capacity and removal depth. The measurement method is as follows: taking 20ml of sample, loading the sample into a stainless steel reactor with the diameter of 15mm, introducing nitrogen with the volume proportion of 2 percent of hydrogen at the temperature of 250 ℃, and keeping the volume space velocity for 500h-1Reducing for 12h and then cooling to room temperature. Introducing balance gases of argon, methane and helium at normal pressure and 25 ℃; nitrogen, the impurity composition being 200ppmO2-200ppmH2、-200ppmCO-200ppmCO2-200ppmH2Mixed raw material gas of O, the gas volume space velocity is 5000h-1. The impurity content in the reacted gas was detected on-line during the test, and the experiment was stopped when the impurity concentration after the reaction exceeded 10ppb (v/v).
Figure BDA0002845625990000041
Figure BDA0002845625990000051
The data in Table 1 show that the purifiers of examples 1-6 are directed to impurity O in high purity gas feed gas2、H2、CO、CO2And H2O has good adsorption capacity and purification depth.
Example 8
The scavenger prepared in example 5 was subjected to a multiple "regeneration activation-cycle test". The measurement method is as follows: taking 20ml of sample, loading the sample into a stainless steel reactor with the diameter of 15mm, introducing nitrogen with the volume proportion of 2 percent of hydrogen at the temperature of 250 ℃, and keeping the volume space velocity for 500h-1Reducing for 12h and then cooling to room temperature. (1) At normal pressure and 25 ℃, the composition of 200ppmO is introduced2-200ppmH2-200ppmCO-200ppmCO2-200ppmH2O, the balance being mixed raw material gas of nitrogen, the gas volume space velocity being 5000h-1. The impurity content in the reacted gas was detected on-line during the test, and the experiment was stopped when the impurity concentration after the reaction exceeded 10ppb (v/v). (2) Switching to high-purity nitrogen for system purging, heating to 250 ℃, and introducingNitrogen with 2% hydrogen by volume ratio at a volume space velocity of 500h-1Reducing for 12H, then cutting in high-purity nitrogen to continuously purge H in tail gas2The content is less than 10ppb, and the raw material gas is cut into the raw material gas after being reduced to room temperature for the second evaluation test. The above steps (1) and (2) are repeated, and the experimental results are summarized in the following table 2.
Figure BDA0002845625990000052
As can be seen from the data in the table, the purifying agent prepared in example 5 still maintains higher adsorption capacity and lower purification depth after 50 purification-regeneration cycle tests, and still has adsorption capacity not lower than 80% compared with the experimental result of the first test.

Claims (9)

1. A purifying agent for removing trace impurities in high-purity gas is characterized in that: the purifying agent consists of an active component, a carrier and a binder; wherein, the active component accounts for 60 to 90 percent of the total weight of the catalyst, the carrier accounts for 9 to 20 percent of the total weight of the catalyst, and the binder accounts for 1 to 20 percent of the total weight of the catalyst; the active components are three or more compounds of Ni, Cu, Mn, Fe and Mo, and the carrier is SiO2Or SiO2A composite oxide with MOx.
2. The purifying agent for removing trace impurities from high-purity gas according to claim 1, which comprises: the active component is Cu/Ni with the weight ratio of 0.1-1.6; the weight ratio of Mn to Ni is 0.2-1.8; the weight ratio of Mo to Ni is 0.01-0.35; the weight ratio of Fe/Ni is 0.05-1.
3. The purifying agent for removing trace impurities from high-purity gas according to claim 1, which comprises: m in the MOx is Al or Ti, and x is 1-2.
4. The purifying agent for removing trace impurities from high-purity gas according to claim 1, which comprises: the carrier SiO2Is SiO2Powder and silica solOne or more of diatomite; the binder is one or more of kaolin, high alumina cement, pseudo-boehmite or silica sol.
5. A method for preparing a purifying agent for removing trace impurities in high-purity gas according to claim 1, which is characterized in that:
(1) mixing and dissolving soluble metal salt of an active component precursor in deionized water, adding a carrier under the condition of stirring, and heating to 60-85 ℃ for later use;
(2) adding a sodium carbonate solution into the system in the step (1) under the condition of stirring until the pH value of the system is 8-10, and then aging for 1-8 hours at the temperature of 60-85 ℃;
(3) centrifuging the aged system, collecting precipitate, dispersing the precipitate in water of 60-85 deg.C, repeatedly washing to neutrality, drying, and roasting to obtain active component powder;
(4) and fully mixing the obtained active component powder with a binder, and airing and roasting overnight at room temperature to obtain the purifying agent.
6. The process for preparing a purifying agent for removing trace impurities from a high-purity gas as claimed in claim 5, wherein: the soluble metal salt of the active component precursor in the step (1) comprises nickel nitrate/nickel acetate, manganese nitrate/manganese acetate and ferric nitrate/ferric acetate; cobalt nitrate/acetate, ammonium molybdate.
7. The process for preparing a purifying agent for removing trace impurities from a high-purity gas as claimed in claim 5, wherein: and (3) collecting the precipitate, drying the precipitate at a low temperature of between 80 and 150 ℃, and roasting the precipitate at a temperature of between 300 and 500 ℃ for 2 to 4 hours to obtain active component powder.
8. The process for preparing a purifying agent for removing trace impurities from a high-purity gas as claimed in claim 5, wherein: and (4) fully mixing the powder and the binder in the step (4), forming, drying overnight at room temperature, roasting at the temperature of 300 ℃ and 500 ℃ for 2-4 hours, and cooling to room temperature to obtain the high-performance high-temperature-resistant high-performance high-temperature.
9. The use of the scavenger for removing trace impurities in high-purity gas according to claim 1, wherein the scavenger comprises: the use of said scavenger for the purification of nitrogen, hydrogen, oxygen, argon, helium, methane and organic gases.
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CN114146685A (en) * 2021-12-09 2022-03-08 大连圣迈化学有限公司 Nickel-based purifying agent and preparation method and application thereof

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