CN112713873A - Surface acoustic wave filter with multilayer thin film structure - Google Patents
Surface acoustic wave filter with multilayer thin film structure Download PDFInfo
- Publication number
- CN112713873A CN112713873A CN202011592828.2A CN202011592828A CN112713873A CN 112713873 A CN112713873 A CN 112713873A CN 202011592828 A CN202011592828 A CN 202011592828A CN 112713873 A CN112713873 A CN 112713873A
- Authority
- CN
- China
- Prior art keywords
- layer
- acoustic wave
- surface acoustic
- film structure
- wave filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000010410 layer Substances 0.000 claims abstract description 50
- 239000002346 layers by function Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical group CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- OJCDKHXKHLJDOT-UHFFFAOYSA-N fluoro hypofluorite;silicon Chemical compound [Si].FOF OJCDKHXKHLJDOT-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- 230000008719 thickening Effects 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 238000004891 communication Methods 0.000 abstract description 5
- 238000001228 spectrum Methods 0.000 abstract description 5
- 239000002131 composite material Substances 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000013468 resource allocation Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a surface acoustic wave device, in particular to a surface acoustic wave filter with a multilayer thin film structure; the filter comprises a piezoelectric layer and metal finger strips arranged in a comb shape above the piezoelectric layer, a functional layer is arranged below the piezoelectric layer, a high-sound-velocity layer is arranged below the functional layer, and a supporting substrate is arranged below the high-sound-velocity layer. The piezoelectric ceramic piezoelectric transducer comprises a piezoelectric layer and metal fingers arranged in a comb shape above the piezoelectric layer, and is characterized in that a functional layer is arranged below the piezoelectric layer, a high-speed layer is arranged below the functional layer, and a supporting substrate is arranged below the high-speed layer; the invention utilizes the composite film structure of the piezoelectric layer to inhibit bulk wave scattering, and further reduces the clutter loss of the surface wave by weighting the metal finger, thereby realizing the surface acoustic wave filter with low loss, high squareness and high temperature stability and meeting the filter requirement of the future communication dense frequency spectrum.
Description
Technical Field
The invention relates to a surface acoustic wave device, in particular to a surface acoustic wave filter with a multilayer thin film structure.
Background
In recent years, mobile communication data traffic and the number of Long Term Evolution (LTE) bands required by 3GPP have increased significantly, and thus band resource allocation of LTE and enhanced LTE (LTE-a) spectrum is becoming more congested; in addition, Carrier Aggregation (CA) technology for uplink and High Power User Equipment (HPUE) have also begun to find application in various communication systems. To meet these new functions and frequency band requirements, acoustic filters are required to have lower insertion loss, steeper transition band characteristics, higher temperature stability, higher power tolerance, expanded operable frequency range, higher linearity, smaller size, and higher integration; among them, a higher Q value and a smaller Temperature Coefficient of Frequency (TCF) are two of the most critical factors for realizing a high-performance acoustic wave resonator.
At present, the main methods for improving the Q value of the SAW device and improving the TCF performance are as follows: optimizing the orientation angle of the substrate, improving the electrode structure and improving the material performance, heterogeneous material combination and the like. Recent advances have been made using temperature compensated SAW (TC-SAW) technology, which has not only good TCF performance but also high Q values. In addition, an acoustic plate wave (acoustic plate wave) device has a high acoustic wave propagation speed and a large electromechanical coupling coefficient (k)2) Significant progress has also been made in recent years. However, the above techniques are difficult to achieve both an extremely high Q value and a minimum TCF, and are not suitable for application scenarios with spectrum congestion.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a high-performance surface acoustic wave filter with a multilayer thin-film structure, and weights the filter fingers to achieve a high Q value while maintaining a small TCF performance.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the utility model provides a surface acoustic wave filter of multilayer film structure, including the piezoelectric layer with the metal finger that the comb shape of piezoelectric layer top set up be provided with the functional layer below the piezoelectric layer be provided with the high acoustic velocity layer below the functional layer be provided with the supporting substrate below the high acoustic velocity layer.
Further, the thicknesses of the piezoelectric layer, the functional layer and the high acoustic velocity layer are all less than or equal to one acoustic wavelength, that is, the thicknesses of the thin film structures are controlled within one acoustic wavelength.
Further, the functional layer material adopts silicon dioxide (SiO)2) Silicon oxynitride (SiON), silicon oxyfluoride (SiOF) or tantalum pentoxide (Ta)2O5)。
Further, the piezoelectric layer is made of Lithium Tantalate (LT) or Lithium Niobate (LN).
Further, the material of the high-acoustic-velocity layer adopts metal, sapphire and aluminum oxide (Al)2O3) Silicon nitride (SiN), or aluminum nitride (AlN).
Further, the metal finger or the acoustic channel is set to be inclined.
Preferably, the range of the inclination angle is 0-20 degrees.
Furthermore, widening or thickening processing is carried out at the tail end of the metal finger strip, and piston type weighting is formed.
Optionally, the ends of the spaced metal fingers are piston weighted.
Optionally, all metal finger tips are piston weighted.
Compared with the prior art, the invention has the following beneficial effects:
(1) high Q value: the surface acoustic wave filter has the characteristic of high Q value, and the novel multilayer film structure of the invention focuses the energy of surface acoustic waves on the surface of the substrate, so that the waves are propagated without bulk wave loss on the substrate; meanwhile, the metal finger strips are subjected to weighting design, so that the energy loss of the surface wave can be reduced, and the peak value Q of the Q value of the resonance unit is enabled to be in a frequency band of 1.9GHzmaxUp to 3000 or more, and the resonant unit Q of the conventional SAW filtermaxAt about 1000;
(2) low frequency Temperature Coefficient (TCF): the invention can improve the temperature coefficient of frequency, and achieve ideal TCF by controlling the linear expansion coefficient and the sound velocity of each layer of film;
(3) good heat dissipation: the invention also shows good heat dissipation characteristic, when high-power electric signals are input, the metal finger strips generate heat; more heat is generated upon input of a more intense signal, which may lead to equipment failure, including electrode failure. The filter can efficiently dissipate heat generated by the metal finger strip electrodes to the substrate, so that the temperature rise of the electrodes is restrained, and the temperature rise is nearly half lower than that of the traditional SAW filter. The invention has smaller frequency temperature coefficient and better heat dissipation characteristic, and ensures the stability of the frequency response of the SAW filter at high temperature.
(4) The multi-layer thin film structure and the finger weighting mode designed by the filter can reduce clutter loss, and simultaneously realize high Q value and high temperature stability so as to meet the increasingly crowded spectrum application requirements in future communication.
Drawings
FIG. 1 is a schematic structural diagram of a surface acoustic wave filter with a multilayer thin film structure according to an embodiment of the present invention;
FIG. 2 is a diagram of a metal finger tilt weighting scheme in an embodiment of the present invention;
FIG. 3 is a diagram of an acoustic channel tilt weighting scheme in an embodiment of the present invention;
FIG. 4 is a block diagram of a spaced piston weighting scheme in an embodiment of the present invention;
FIG. 5 is a block diagram of a spaced piston weighting scheme in an embodiment of the present invention;
in the figure, 1, support substrate, 2, high acoustic velocity layer, 3, functional layer, 3, piezoelectric layer, 5, metal fingers, 6, electrical connection port, 7, acoustic channel.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a surface acoustic wave filter of a multilayer thin film structure according to an embodiment of the present invention, and as shown in fig. 1, the surface acoustic wave filter of the multilayer thin film structure includes a piezoelectric layer 4 and a metal finger 5 arranged in a comb shape above the piezoelectric layer 4, a functional layer 3 is arranged below the piezoelectric layer 4, a high acoustic velocity layer 2 is arranged below the functional layer 3, and a support substrate 1 is arranged below the high acoustic velocity layer 2.
In the embodiment of the invention, for the purposes of high temperature stability and high Q, the supporting substrate 1 in the surface acoustic wave filter with a multilayer film structure of the invention takes the composite film as a substrate, the temperature stability is improved and the energy loss of bulk waves is reduced by utilizing the temperature complementary characteristics and different acoustic impedance characteristics of each layer in the composite film, and meanwhile, the transverse mode is restrained by weighting the resonator fingers, the energy loss of the surface acoustic wave is further reduced, and the Q value of the resonator is improved.
Specifically, in some embodiments, the supporting substrate 1 is made of a silicon material. The silicon material is selected as the supporting base, and the heat dissipation device has the advantages of being fast in heat dissipation, low in cost, easy to integrate and the like.
The material of the high acoustic speed layer 2 can adopt metal, sapphire, alumina, silicon nitride (SiN) and aluminum nitride (AlN).
The material of the functional layer 3 can adopt silicon dioxide (SiO)2) Silicon oxynitride (SiON), silicon oxyfluoride (SiOF), tantalum pentoxide (Ta)2O5)。
The piezoelectric layer 4 can be made of lithium tantalate or lithium niobate.
The temperature stability is improved and the energy loss of bulk waves is reduced by utilizing the temperature complementary characteristics and different acoustic impedance characteristics of different film layers in the acoustic channel; the present invention thus controls the total thickness of the piezoelectric layer 4, the functional layer 3 and the high acoustic velocity layer 2 to within one acoustic wavelength, wherein the acoustic velocity of the material used in the high acoustic velocity layer 2 is higher than that of the other layers, and is therefore referred to as a high acoustic velocity layer.
In some embodiments, since the acoustic velocity of silicon is higher than that of the piezoelectric material, silicon may be used for the high acoustic velocity layer 2, and likewise, silicon may be used for the support substrate.
Because the transverse mode brings a large amount of surface acoustic wave energy loss, the transverse mode also needs to be further restrained.
Fig. 2 is a diagram illustrating a tilted weighting structure of a metal finger in an embodiment of the present invention, as shown in fig. 2, in this embodiment, one end of the metal finger 5 is connected to an electrical port 6; the electrical connection port 6 serves as a main bus bar and can be guided to the acoustic channel 7; the acoustic channel 7 is a surface acoustic wave propagation channel formed by interdigital transducers, generally between bus bars on the upper and lower sides (only one bus bar is shown in fig. 2); in the embodiment, the metal finger strips 5 are inclined by a certain angle, that is, the metal finger strips can be inclined left and right in a certain manner, and generally the angle can be ensured to be about 0-10 degrees; and ensures that these metal fingers 5 are parallel to each other while the bus bars are still horizontal and parallel to each other, thereby ensuring that the area formed between the bus bars (the area covering all the metal fingers 5), i.e., the acoustic channel 7, is still horizontal.
Fig. 3 is a diagram of an inclined weighted structure of an acoustic channel in an embodiment of the present invention, as shown in fig. 3, in this embodiment, the metal finger 5 is kept in a normal vertical state, and the acoustic channel 7 is inclined at a certain angle, in this process, the bus bar 6 can be inclined at a certain angle, which is the essence that the multiple thin films except the metal finger 5 are inclined to ensure that the metal finger 5 is still in a vertical state, and the other hierarchical structures maintain an inclined state, so that the acoustic channel 7 is in an inclined state.
It will be appreciated that, assuming in a conventional state, a state in which the metal fingers 5 are vertically downward in a top view of the filter, the acoustic channel 7 assumes a rectangular shape (or a quasi-rectangular shape); in the above embodiment of the present invention, the metal finger 5 or the acoustic channel 7 is tilted, so that the metal finger 5 is in a state of being tilted left and right or the acoustic channel 7 is in a state of being parallelogram; therefore, a certain included angle is formed between the metal finger and the acoustic channel 7, and a transverse mode in the filter is effectively inhibited; of course, the above example is only a specific sound channel structure, and the tilt modes of other irregular sound channels can be adaptively adjusted by referring to the tilt mode of the rectangular sound channel structure.
In some preferred embodiments, the inclination angle of the metal finger strip is set between 0-20 degrees regardless of the inclination of the metal finger strip or the inclination of the acoustic channel, so that the transverse mode can be effectively inhibited at the angle, and the stability of the structure can be ensured.
In some feasible embodiments, the sound channel and the metal finger strip are tilted at the same time, that is, the sound channel is tilted at a certain angle, and the metal finger strip is also tilted at a certain angle.
Fig. 4 is a structure diagram of a spaced piston type weighting according to an embodiment of the present invention, and as shown in fig. 4, fig. 4 is a top view of the metal finger 5, in this embodiment, the end of the metal finger 5 spaced in the comb-shaped metal finger 5 is widened or thickened, so as to increase the cross-sectional area of the metal finger 4.
Fig. 5 is a structure diagram of a spaced piston type weighting according to an embodiment of the present invention, as shown in fig. 5, fig. 5 is a top view of the metal finger 5, and in this embodiment, the ends of all the metal fingers 5 in the comb-tooth-shaped metal finger are widened or thickened, so as to increase the cross-sectional area of the metal finger 5.
In the embodiment of the present invention, the widening process refers to increasing the width of the end of the metal finger 5, i.e. decreasing the finger spacing between the end of the finger and the end of the adjacent finger relative to the width; the thickening refers to an increase in thickness at the end of the metal finger 5, i.e. such that the finger end is convex upwards.
It is understood that the metal finger strips 5 of the present invention can also form a transducer and the like with other structures, and those skilled in the art can fully understand and apply the present invention according to the actual situation.
In some embodiments, the slant weights and the piston weights may be set simultaneously, for example, the metal finger 4 may be set slantwise, and the ends of the metal finger 4 are widened or thickened, and the specific embodiments of the slant weights and the piston weights may be randomly combined, which is not intended to exemplify the invention.
The invention adopts a high-performance filter with a thin film structure, which consists of a supporting substrate, a high sound velocity layer, a functional layer, a piezoelectric layer and metal fingers, firstly utilizes the piezoelectric composite thin film structure to inhibit bulk wave scattering, and secondly carries out weighting design on the metal fingers to further reduce the clutter loss of surface waves, thereby realizing a surface acoustic wave filter with low loss, high rectangularity and high temperature stability, and meeting the requirements of filters with dense frequency spectrums for future communication.
The above examples of the present invention are merely illustrative of the present invention and are not intended to limit the embodiments of the present invention. Variations and modifications in other variations will occur to those skilled in the art upon reading the foregoing description. Not all embodiments are exhaustive. All obvious changes and modifications of the present invention are within the scope of the present invention.
In the description of the present invention, it is to be understood that the terms "coaxial", "bottom", "one end", "top", "middle", "other end", "upper", "one side", "top", "inner", "outer", "front", "center", "both ends", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "disposed," "connected," "fixed," "rotated," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; the terms may be directly connected or indirectly connected through an intermediate, and may be communication between two elements or interaction relationship between two elements, unless otherwise specifically limited, and the specific meaning of the terms in the present invention will be understood by those skilled in the art according to specific situations.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The utility model provides a surface acoustic wave filter of multilayer film structure, including the piezoelectric layer with the metal finger that the comb was set up above the piezoelectric layer, its characterized in that be provided with the functional layer below the piezoelectric layer be provided with the high acoustic velocity layer below the functional layer be provided with the supporting substrate below the high acoustic velocity layer.
2. A surface acoustic wave filter of a multilayer thin film structure as set forth in claim 1, wherein thicknesses of said piezoelectric layer, said functional layer and said high acoustic velocity layer are each less than or equal to one acoustic wavelength.
3. A surface acoustic wave filter of a multilayer thin film structure as set forth in claim 1, wherein said functional layer is made of silicon dioxide (SiO)2) Silicon oxynitride (SiON), silicon oxyfluoride (SiOF) or tantalum pentoxide (Ta)2O5)。
4. A surface acoustic wave filter of a multilayer thin film structure as set forth in claim 1, wherein a material of said piezoelectric layer is Lithium Tantalate (LT) or Lithium Niobate (LN).
5. A surface acoustic wave filter of a multilayer thin film structure as set forth in claim 1, wherein said high acoustic velocity layer is made of metal, sapphire, alumina (Al)2O3) Silicon nitride (SiN), or aluminum nitride (AlN).
6. A surface acoustic wave filter of a multilayer thin film structure as set forth in claim 1, wherein said metal finger or said acoustic channel is set to an oblique angle.
7. A surface acoustic wave filter of a multilayer thin film structure as set forth in claim 6, wherein said inclination angle is in the range of 0 to 20 °.
8. A surface acoustic wave filter of a multilayer thin film structure as set forth in claim 1, 6 or 7, wherein widening or thickening is performed at the ends of said metal fingers to form piston weights.
9. A surface acoustic wave filter of a multilayer thin film structure as set forth in claim 8, wherein the ends of the metal fingers spaced apart are piston-weighted.
10. A surface acoustic wave filter of a multilayer thin film structure as set forth in claim 8, wherein all the ends of the metal fingers are piston-weighted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011592828.2A CN112713873A (en) | 2020-12-29 | 2020-12-29 | Surface acoustic wave filter with multilayer thin film structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011592828.2A CN112713873A (en) | 2020-12-29 | 2020-12-29 | Surface acoustic wave filter with multilayer thin film structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112713873A true CN112713873A (en) | 2021-04-27 |
Family
ID=75546217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011592828.2A Pending CN112713873A (en) | 2020-12-29 | 2020-12-29 | Surface acoustic wave filter with multilayer thin film structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112713873A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115378398A (en) * | 2022-10-21 | 2022-11-22 | 阿尔伯达(苏州)科技有限公司 | Transverse mode suppression electroacoustic transducer |
| CN115632629A (en) * | 2022-10-20 | 2023-01-20 | 重庆大学 | Elastic wave device for realizing transverse wave suppression and manufacturing method |
| CN116032242A (en) * | 2023-03-30 | 2023-04-28 | 阿尔伯达(苏州)科技有限公司 | Surface acoustic wave resonator with parasitic mode suppression layer |
| WO2023202597A1 (en) * | 2022-04-19 | 2023-10-26 | 天通瑞宏科技有限公司 | Surface acoustic wave resonator |
| CN117526897A (en) * | 2024-01-04 | 2024-02-06 | 苏州达波新材科技有限公司 | Dual-mode surface acoustic wave device and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102714490A (en) * | 2010-01-25 | 2012-10-03 | 埃普科斯股份有限公司 | Electroacoustic transducer having reduced losses due to transverse emission and improved performance due to suppression of transverse modes |
| CN108631747A (en) * | 2018-04-12 | 2018-10-09 | 无锡市好达电子有限公司 | A kind of SAW filter materials |
| CN110892640A (en) * | 2017-07-20 | 2020-03-17 | 株式会社村田制作所 | Multiplexer, high-frequency front-end circuit and communication device |
-
2020
- 2020-12-29 CN CN202011592828.2A patent/CN112713873A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102714490A (en) * | 2010-01-25 | 2012-10-03 | 埃普科斯股份有限公司 | Electroacoustic transducer having reduced losses due to transverse emission and improved performance due to suppression of transverse modes |
| CN110892640A (en) * | 2017-07-20 | 2020-03-17 | 株式会社村田制作所 | Multiplexer, high-frequency front-end circuit and communication device |
| CN108631747A (en) * | 2018-04-12 | 2018-10-09 | 无锡市好达电子有限公司 | A kind of SAW filter materials |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023202597A1 (en) * | 2022-04-19 | 2023-10-26 | 天通瑞宏科技有限公司 | Surface acoustic wave resonator |
| CN115632629A (en) * | 2022-10-20 | 2023-01-20 | 重庆大学 | Elastic wave device for realizing transverse wave suppression and manufacturing method |
| CN115378398A (en) * | 2022-10-21 | 2022-11-22 | 阿尔伯达(苏州)科技有限公司 | Transverse mode suppression electroacoustic transducer |
| CN115378398B (en) * | 2022-10-21 | 2023-02-07 | 阿尔伯达(苏州)科技有限公司 | Transverse mode suppression electroacoustic transducer |
| CN116032242A (en) * | 2023-03-30 | 2023-04-28 | 阿尔伯达(苏州)科技有限公司 | Surface acoustic wave resonator with parasitic mode suppression layer |
| CN116032242B (en) * | 2023-03-30 | 2023-08-25 | 阿尔伯达(苏州)科技有限公司 | Surface acoustic wave resonator with parasitic mode suppression layer |
| CN117526897A (en) * | 2024-01-04 | 2024-02-06 | 苏州达波新材科技有限公司 | Dual-mode surface acoustic wave device and preparation method thereof |
| CN117526897B (en) * | 2024-01-04 | 2024-03-22 | 苏州达波新材科技有限公司 | Dual-mode surface acoustic wave device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112713873A (en) | Surface acoustic wave filter with multilayer thin film structure | |
| US11114996B2 (en) | Transversely-excited film bulk acoustic resonators with molybdenum conductors | |
| US10992283B2 (en) | High power transversely-excited film bulk acoustic resonators on rotated Z-cut lithium niobate | |
| US11967945B2 (en) | Transversly-excited film bulk acoustic resonators and filters | |
| Takai et al. | Incredible high performance SAW resonator on novel multi-layerd substrate | |
| US20200373907A1 (en) | Transversely-excited film bulk acoustic resonator with multi-pitch interdigital transducer | |
| JP3879643B2 (en) | Piezoelectric resonator, piezoelectric filter, communication device | |
| US11356077B2 (en) | Acoustic resonators and filters with reduced temperature coefficient of frequency | |
| TW202002304A (en) | Frequency control of spurious shear horizontal mode by adding high velocity layer in a lithium niobate filter | |
| CN108039872A (en) | A kind of resonator structure for high-performance SAW filter designs | |
| CN102223142A (en) | Acoustic resonator | |
| JP5890670B2 (en) | Filter and duplexer | |
| WO2024001352A1 (en) | Acoustic wave device structure with temperature compensation characteristic, and filter and electronic device | |
| US20220029605A1 (en) | Surface acoustic wave resonator and multiplexer including the same | |
| US11909381B2 (en) | Transversely-excited film bulk acoustic resonators with two-layer electrodes having a narrower top layer | |
| US12009798B2 (en) | Transversely-excited film bulk acoustic resonators with electrodes having irregular hexagon cross-sectional shapes | |
| US20210376814A1 (en) | Transversely-excited film bulk acoustic resonators with two-layer electrodes | |
| CN115443610A (en) | Surface acoustic wave electroacoustic device using gap grating to reduce transverse mode | |
| US20240113679A1 (en) | Surface acoustic wave devices with lithium niobate piezoelectric material | |
| Zheng et al. | A comparative study of acoustic loss in piezoelectric on insulator (POI) substrates | |
| WO2023123465A1 (en) | Filter, radio frequency system, and electronic device | |
| CN218416337U (en) | Resonator and filter | |
| US20240022234A1 (en) | Filters using transversly-excited film bulk acoustic resonators with frequency-setting dielectric layers | |
| US11901878B2 (en) | Transversely-excited film bulk acoustic resonators with two-layer electrodes with a wider top layer | |
| CN219304811U (en) | Resonator with a plurality of resonators |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220525 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Applicant after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: 400060 No. 14, Huayuan Road, Nan'an District, Chongqing Applicant before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute |
|
| TA01 | Transfer of patent application right | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210427 |
|
| RJ01 | Rejection of invention patent application after publication |