CN112701464B

CN112701464B - Millimeter wave package antenna and array antenna

Info

Publication number: CN112701464B
Application number: CN202011582203.8A
Authority: CN
Inventors: 高永振; 杨波; 伍尚坤; 高霞; 朱继宏; 王彪; 张志梅; 邱诗彬
Original assignee: Comba Network Systems Co Ltd
Current assignee: Comba Network Systems Co Ltd
Priority date: 2020-12-28
Filing date: 2020-12-28
Publication date: 2024-04-26
Anticipated expiration: 2040-12-28
Also published as: CN112701464A

Abstract

When the beam forming chip works, an external device sends antenna signals to the beam forming chip through a second radio frequency circuit layer and a second radio frequency signal input/output pin of the beam forming chip, and radio frequency signals are input to the first radio frequency circuit layer through a first radio frequency signal input/output pin of the beam forming chip and are transmitted to the radiation unit layer through the first radio frequency circuit layer. Antenna signals received by the radiation unit layer can enter the beam forming chip through the first radio frequency signal input/output pin, and are output to the second radio frequency circuit layer through the second radio frequency signal input/output pin of the beam forming chip, and are fed back to an external device through the second radio frequency circuit layer. Therefore, the millimeter wave package antenna and the array antenna can realize the input and output of radio frequency signals of the radiation unit layers of the multi-layer circuit board with the HDI design, and can be suitable for the production and manufacture of the HDI technology with mature technology, thereby having low cost, small volume and light weight.

Description

Millimeter wave package antenna and array antenna

Technical Field

The present invention relates to the field of communications antennas, and in particular, to a millimeter wave package antenna and an array antenna.

Background

With the development of 5G communication technology, in order to overcome the problem of shortage of sub-6G spectrum resources, millimeter waves have significant advantages in terms of large-bandwidth and high-rate communication. However, in the 5G millimeter wave band, the electromagnetic wave signal has large space loss and short propagation path.

The traditional 5G millimeter wave monopole array antenna meets the requirement of hybrid-Beamforming (hybrid Beamforming) application scene MIMO communication through two array antennas with different polarizations, and is generally realized by adopting an LTCC (Low Temperature Co-FIRED CERAMIC low-temperature co-fired ceramic) process, and has a large limitation on the large-scale application of 5G millimeter wave communication due to the high cost of the LTCC process.

Disclosure of Invention

Based on this, it is necessary to overcome the defects of the prior art, and to provide a millimeter wave package antenna and an array antenna, which can be applied to the production and manufacture of the HDI technology with mature technology, and can realize low cost, small volume and light weight.

The technical scheme is as follows:

A millimeter wave package antenna comprising a multilayer circuit board, the multilayer circuit board comprising: the radiating unit layer is provided with a plurality of radiating oscillator sheets and two feed plates which are arranged corresponding to the radiating oscillator sheets; the beam forming chip is provided with a first radio frequency signal input/output pin, a second radio frequency signal input/output pin and a grounding pin; the high-frequency dielectric material is arranged between the first stratum and the second radio frequency circuit layer; the first radio frequency signal input/output pin is electrically connected to the first radio frequency circuit layer, the first radio frequency circuit layer is electrically connected with the feed plate, the first stratum is electrically connected with the grounding pin, and the second radio frequency signal input/output pin is electrically connected to the second radio frequency circuit layer.

When the millimeter wave package antenna and the beam forming chip work, the external device sends the antenna signal to the beam forming chip through the second radio frequency circuit layer and the second radio frequency signal input and output pin of the beam forming chip, and the radio frequency signal is input to the first radio frequency circuit layer through the first radio frequency signal input and output pin of the beam forming chip and is transmitted to the radiation unit layer through the first radio frequency circuit layer. In addition, the antenna signal received by the radiation unit layer can also enter the beam forming chip through the first radio frequency signal input/output pin, and is output to the second radio frequency circuit layer through the second radio frequency signal input/output pin of the beam forming chip, and is fed back to an external device through the second radio frequency circuit layer. Therefore, the radio frequency signal input and output of the radiation unit layer of the multi-layer circuit board with the HDI design can be realized, and the multi-layer circuit board can be suitable for the production and manufacture of the HDI technology with mature technology, thereby having low cost, small volume and light weight.

In one embodiment, the first radio frequency circuit layer includes an N-division power division feeder, the first radio frequency signal input/output pin is electrically connected to a combining end of the N-division power division feeder, and a plurality of branch ends of the N-division power division feeder are respectively and correspondingly electrically connected to the feed disks.

In one embodiment, the multi-layer circuit board further includes a control signal layer, the control signal layer is provided with a control circuit, and the beam forming chip is further provided with a control pin, and the control pin is electrically connected with the control circuit.

In one embodiment, the multilayer circuit board further comprises a power plane layer; the beam forming chip is also provided with a power pin, and the power pin is electrically connected with the power plane of the power plane layer.

In one embodiment, the multilayer circuit board further comprises a second formation, a third formation, and a fourth formation; the radiation unit layer, the second stratum, the power plane layer, the third stratum, the control signal layer, the fourth stratum, the first radio frequency circuit layer, the first stratum and the second radio frequency circuit layer are sequentially stacked from top to bottom; the beam forming chip is arranged on the second radio frequency circuit layer.

In one embodiment, the multilayer circuit board is provided with a plurality of first vertical interconnection metallized through holes, the plurality of first vertical interconnection metallized through holes are arranged in one-to-one correspondence with the plurality of feed plates, the first vertical interconnection metallized through holes penetrate through the radiation unit layer to the first radio frequency circuit layer, one end of each first vertical interconnection metallized through hole is electrically connected with the feed plate, and the other end of each first vertical interconnection metallized through hole is electrically connected with the branch end of the N power division feeder;

The multi-layer circuit board is also provided with a plurality of second vertical interconnection metallized through holes, the second vertical interconnection metallized through holes penetrate through the first radio frequency circuit layer to the second radio frequency circuit layer, one end of each second vertical interconnection metallized through hole is electrically connected with the combined end of the N-division power division feeder, and the other end of each second vertical interconnection metallized through hole is electrically connected with the first radio frequency signal input/output pin;

the multilayer circuit board is also provided with a third vertical interconnection metallization via; the third vertical interconnection metallization via penetrates through the second stratum to the second radio frequency circuit layer, one end of the third vertical interconnection metallization via is electrically connected with the control circuit, and the other end of the third vertical interconnection metallization via is electrically connected with the control pin;

the multi-layer circuit board is also provided with a plurality of fourth vertical interconnection metallization via holes, the fourth vertical interconnection metallization via holes penetrate through the second stratum to the second radio frequency circuit layer, and the power supply surface of the power supply plane layer is electrically connected with the grounding pin through the fourth vertical interconnection metallization via holes;

The multi-layer circuit board is further provided with a plurality of fifth vertical interconnection metallization via holes and a plurality of sixth vertical interconnection metallization via holes, the fifth vertical interconnection metallization via holes penetrate through the first radio frequency circuit layer from the second stratum, the sixth vertical interconnection metallization via holes penetrate through the second radio frequency circuit layer from the first radio frequency circuit layer, the fifth vertical interconnection metallization via holes are electrically connected with the sixth vertical interconnection metallization via holes, the first stratum, the second stratum, the third stratum and the fourth stratum are electrically connected with each other through the fifth vertical interconnection metallization via holes, and the sixth vertical interconnection metallization via holes are electrically connected with the grounding pin.

In one embodiment, the periphery of the first vertical interconnect metallization via is surrounded by a plurality of spaced apart fifth vertical interconnect metallization vias, and the periphery of the second vertical interconnect metallization via is surrounded by a plurality of spaced apart sixth vertical interconnect metallization vias.

In one embodiment, the multilayer circuit board is further provided with a first-order metallized via hole, the first-order metallized via hole penetrates through the second radio frequency circuit layer from the first stratum, and the first stratum is electrically connected with the grounding pin through the first-order metallized via hole.

In one embodiment, the multilayer circuit board further comprises a metal-free wiring layer located between the radiating element layer and the second ground layer.

In one embodiment, the metal-free wiring layer is two layers, the control signal layer is two layers, and high-frequency dielectric materials are arranged between each adjacent layer of the radiation unit layer, the metal-free wiring layer, the second stratum, the power plane layer, the third stratum, the control signal layer, the fourth stratum, the first radio frequency circuit layer, the first stratum and the second radio frequency circuit layer.

An array antenna comprises more than two millimeter wave package antennas.

When the array antenna and the beam forming chip work, the external device sends antenna signals to the beam forming chip through the second radio frequency circuit layer and the second radio frequency signal input and output pin of the beam forming chip, and radio frequency signals are input to the first radio frequency circuit layer through the first radio frequency signal input and output pin of the beam forming chip and are transmitted to the radiation unit layer through the first radio frequency circuit layer. In addition, the antenna signal received by the radiation unit layer can also enter the beam forming chip through the first radio frequency signal input/output pin, and is output to the second radio frequency circuit layer through the second radio frequency signal input/output pin of the beam forming chip, and is fed back to an external device through the second radio frequency circuit layer. Therefore, the radio frequency signal input and output of the radiation unit layer of the multi-layer circuit board with the HDI design can be realized, and the multi-layer circuit board can be suitable for the production and manufacture of the HDI technology with mature technology, thereby having low cost, small volume and light weight.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application.

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of a beam forming chip of a millimeter wave package antenna according to an embodiment of the present invention;

fig. 2 is a schematic cross-sectional view of a millimeter wave package antenna according to an embodiment of the invention;

Fig. 3 is a schematic structural diagram of a radiating element layer of a millimeter wave package antenna according to an embodiment of the present invention;

Fig. 4 is a schematic structural diagram of a metal-free wiring layer of a millimeter wave package antenna according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of a second stratum of a millimeter wave package antenna according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram of a power plane layer of a millimeter wave package antenna according to an embodiment of the present invention;

Fig. 7 is a schematic structural diagram of a control signal layer of a millimeter wave package antenna according to an embodiment of the present invention;

fig. 8 is a schematic structural diagram of a first radio frequency circuit layer of a millimeter wave package antenna according to an embodiment of the present invention;

fig. 9 is a schematic structural diagram of a first stratum of a millimeter wave package antenna according to an embodiment of the present invention;

fig. 10 is a schematic structural diagram of a second radio frequency circuit layer of a millimeter wave package antenna according to an embodiment of the present invention;

fig. 11 is a schematic structural diagram of a radiation unit layer of an array antenna according to an embodiment of the invention;

fig. 12 is a schematic structural diagram of a second rf signal input/output pin connected to a power division feeding network in an array antenna according to an embodiment of the present invention;

Fig. 13 is a schematic layout diagram of a plurality of beamforming chips in an array antenna according to an embodiment of the invention.

10. A radiation element layer; 11. a radiating oscillator piece; 12. a feed plate; 20. a beam forming chip; 21. a first radio frequency signal input/output pin; 22. a second radio frequency signal input/output pin; 23. a ground pin; 24. a control pin; 25. a power pin; 30. a first radio frequency circuit layer; 31. one-N power division feeder; 311. a combining end; 312. a branch end; 40. a first formation; 50. a second radio frequency circuit layer; 60. a control signal layer; 61. a control circuit; 70. a power plane layer; 71. a power plane; 81. a second formation; 82. a third formation; 83. a fourth formation; 91. a first vertical interconnect metallization via; 92. a first anti-pad; 93. a second vertical interconnect metallization via; 94. a second anti-pad; 95. a third vertical interconnect metallization via; 96. a third anti-bonding pad; 97. a fourth vertical interconnect metallization via; 98. a fourth anti-pad; 981. a first power supply surface; 991. a fifth vertical interconnect metallization via; 992. a sixth vertical interconnect metallization via; 993. first-order metallization via holes; 994. a metal-free wiring layer; 995. a fifth anti-pad; 996. a second power supply surface; 101. a first dielectric layer; 102. a second dielectric layer; 103. a third dielectric layer; 104. a fourth dielectric layer; 105. a fifth dielectric layer; 106. a sixth dielectric layer; 107. a seventh dielectric layer; 108. an eighth dielectric layer; 109. a ninth dielectric layer; 110. a tenth dielectric layer; 111. an eleventh dielectric layer; 121. sixteen-power-division feed network; 123. a radio frequency feed port; 124. a digital multi-pin socket; 125. a connection pad; 126. a daisy chain main line; 127. microstrip lines.

Detailed Description

In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.

Referring to fig. 1 and 2, fig. 1 is a schematic diagram illustrating a structure of a beam forming chip 20 of a millimeter wave package antenna according to an embodiment of the invention; fig. 2 is a schematic cross-sectional view of a millimeter wave package antenna according to an embodiment of the invention. The millimeter wave package antenna provided by the embodiment of the invention comprises a multilayer circuit board. The multilayer circuit board includes: the radiation unit layer 10, the beam forming chip 20, the first radio frequency circuit layer 30, the first stratum 40 and the second radio frequency circuit layer 50 are stacked in this order.

Referring to fig. 2 and 3, the radiating element layer 10 is provided with a plurality of radiating element sheets 11, and two feeding plates 12 corresponding to the radiating element sheets 11. The radiating oscillator piece 11 is, for example, square, circular, elliptical, or the like, and is not limited thereto.

Referring to fig. 1 and 2, the beam forming chip 20 is provided with a first rf signal input/output pin 21, a second rf signal input/output pin 22 and a ground pin 23.

Referring to fig. 2, a high-frequency dielectric material is disposed between the first rf circuit layer 30 and the first formation 40, and between the first formation 40 and the second rf circuit layer 50. The first rf signal input/output pin 21 is electrically connected to the first rf circuit layer 30, and the first rf circuit layer 30 is electrically connected to the feed tray 12. The first ground layer 40 is electrically connected to the ground pin 23. The second rf signal input/output pin 22 is electrically connected to the second rf circuit layer 50.

Specifically, referring to fig. 8, fig. 8 is a schematic structural diagram of a first radio frequency circuit layer 30 of a millimeter wave package antenna according to an embodiment of the invention. The first radio frequency line layer 30 includes a divide-by-N power division feeder 31. The first rf signal input/output pin 21 is electrically connected to the combining terminal 311 of the N-division power division feeder 31. The branch ends 312 of the N-division power division feeder line 31 are respectively and electrically connected to the feed plates 12.

When the above millimeter wave package antenna and the beam forming chip 20 are in operation, the external device sends the antenna signal to the beam forming chip 20 through the second radio frequency circuit layer 50 and the second radio frequency signal input/output pin 22 of the beam forming chip 20, and inputs the radio frequency signal to the first radio frequency circuit layer 30 through the first radio frequency signal input/output pin 21 of the beam forming chip 20, and the radio frequency signal is transmitted to the radiation unit layer 10 by the first radio frequency circuit layer 30. In addition, the antenna signal received by the radiation unit layer 10 may also enter the beam forming chip 20 through the first rf signal input/output pin 21, be output to the second rf circuit layer 50 through the second rf signal input/output pin 22 of the beam forming chip 20, and be fed back to an external device through the second rf circuit layer 50. Thus, the radio frequency signal input and output of the radiation unit layer 10 of the multilayer circuit board designed by the HDI (HIGH DENSITY Interconnector high-density interconnection) can be realized, and the radiation unit layer can be applicable to the production and manufacture of the HDI technology with mature technology, thereby having low cost, small volume and light weight.

It should be noted that, of course, the millimeter wave package antenna is not limited to be manufactured by using the HDI process, and the millimeter wave package antenna can also be manufactured by using the LTCC process.

Referring to fig. 1 again, it should be noted that the number of the second rf signal input/output pins 22 of the beamforming chip 20 is not limited, and is schematically shown in the drawings in this embodiment; in addition, the number of the first rf signal input/output pins 21 of the beamforming chip 20 is not limited, and may be, for example, one, two, three, four or other numbers, and four first rf signal input/output pins 21 are arranged in a 2X2 array in this embodiment, which is illustrated in fig. 1. Of course, the arrangement of the first rf signal input/output pins 21 may be 8, for example, and may be arranged in a 2X4 array. The number of the ground pins 23 of the beam forming chip 20 is not limited, and may be one, two, three, four, or other numbers.

Referring to fig. 3, it should be noted that the corresponding arrangement of the two feeding pads 12 and the radiating element sheet 11 refers to that the two feeding pads 12 are oppositely disposed at the periphery of the radiating element sheet 11, and a connecting line of the centers of the two feeding pads 12 passes through the center of the radiating element sheet 11. The feeding plate 12 may be spaced apart from the edge of the radiating element piece 11 to perform coupling feeding, or may be directly connected to the edge of the radiating element piece 11. The two feed plates 12 feed the radiating element sheet 11 with a first polarization direction signal (for example, a +45° polarization direction signal or a-45 ° polarization direction signal) to realize a millimeter wave single polarization 5G array antenna. When the feeding disc 12 and the edge of the radiating oscillator piece 11 are provided with a gap for coupling feeding, broadband characteristics can be realized, and the frequency band of 5GNRn258 of 24.25 GHz-27.5 GHz can be covered.

Further, the two feed pads 12 and one radiating element sheet 11 form one array element, and as shown in a dashed line box P in fig. 3, two array elements form one-drive-two sub-array, and in fig. 3,4 identical sub-array elements are shared to form a 2×2 one-drive-two sub-array. In addition, the horizontal spacing between adjacent sub-array units is S1 as shown in fig. 3, and S1 is generally smaller than half wavelength, and is optimized according to beam scanning range, sidelobe and grating lobe requirements, and the like. The vertical spacing between adjacent sub-array units is S2 as shown in fig. 3, and S2 may be slightly larger than half a wavelength, and is optimized according to beam scanning range, sidelobe and grating lobe requirements, etc. It should be noted that one wavelength is equal to the speed of light/antenna frequency, i.e. is related to the antenna frequency, which is for example 26GHz, and one wavelength is about 11.5mm.

Referring to fig. 2 and 8, it should be noted that N in the N-division power division feeder 31 is a natural number not less than 2, and may be, for example, 2, 3, 4, 6, 8, etc. In the present embodiment, N in the one-to-N power-division feeder 31 illustrated in fig. 8 is specifically 4.

Referring to fig. 1, fig. 2, and fig. 7, fig. 7 is a schematic diagram illustrating a control signal layer 60 of a millimeter wave package antenna according to an embodiment of the invention. In one embodiment, the multi-layer circuit board further includes a control signal layer 60. The control signal layer 60 is provided with control lines 61. The beam forming chip 20 is also provided with a control pin 24. The control pin 24 is electrically connected to the control line 61. In this way, the external device sends the trigger signals to the beamforming chips 20 through the control signal layer 60, so as to trigger the beamforming chips 20, and the beamforming chips 20 perform related actions after being triggered.

Specifically, the control pins 24 provided on the beam forming chip 20 may be one, two or other numbers, without limitation. In this embodiment, there are two control pins 24 of the beam forming chip 20, and one of the control pins 24 is, for example, a TDD (Test-Driven Development, test drive development) switching control pin, so as to implement time division switching control on the TDD signal. The other control pin 24 is, for example, an SPI (SERIAL PERIPHERAL INTERFACE ) control pin, and implements configuration of the chip, including phase control, amplitude control, power detection, temperature compensation, and the like.

The control signal layer 60 is configured to be one layer, two layers, three layers or other numbers according to the actual wiring condition, and the specific number of layers is not limited. In the present embodiment, the control signal layer 60 illustrated in fig. 2 is two layers.

Referring to fig. 1, fig. 2, and fig. 6, fig. 6 is a schematic structural diagram of a power plane layer 70 of a millimeter wave package antenna according to an embodiment of the invention. Further, the multilayer circuit board also includes a power plane layer 70. The beam forming chip 20 is also provided with a power pin 25. The power pins 25 are electrically connected to the power plane 71 of the power plane 70. It should be noted that the power pins 25 of the beamforming chip 20 are one, two, three, four or other numbers, and the number is not limited. In this embodiment, the number of power supply pins 25 of the beam forming chip 20 illustrated in fig. 1 is four, and the power supply voltages to which the four power supply pins 25 are connected are the same.

Referring to fig. 2 and fig. 5, fig. 5 is a schematic diagram illustrating a structure of a second ground layer 81 of a millimeter wave package antenna according to an embodiment of the invention. In one embodiment, the multilayer circuit board further includes a second formation 81, a third formation 82, and a fourth formation 83. The radiation unit layer 10, the second stratum 81, the power plane layer 70, the third stratum 82, the control signal layer 60, the fourth stratum 83, the first radio frequency circuit layer 30, the first stratum 40, and the second radio frequency circuit layer 50 are sequentially stacked from top to bottom. The beam forming chip 20 is disposed on the second radio frequency line layer 50. Thus, the second formation 81 serves as a reference formation for the radiating element layer 10, providing a reference ground plane for the radiating element layer 10 in order to achieve the radiating characteristics of the antenna element. The second stratum 81 and the third stratum 82 are respectively located at two sides of the power plane layer 70, so that isolation of the power plane layer 70 is achieved, mutual interference between the power plane layer 70 and the control signal layer 60 is prevented, and adverse effects on performance of the beam forming chip 20 can be avoided. The fourth formation 83 enables isolation of the control signal layer 60 from the first radio frequency circuitry layer 30. The first stratum 40 can isolate the first radio frequency circuit layer 30 from the second radio frequency circuit layer 50, and is also a reference ground plane of the first radio frequency circuit layer 30 and the second radio frequency circuit layer 50.

The second formation 81, the third formation 82 and the fourth formation 83 have the same structure, and the structure of the second formation 81 is schematically shown in fig. 5.

Referring to fig. 2, further, the multi-layer circuit board is provided with a plurality of first vertical interconnect metallization vias 91. The first vertical interconnection metallized via holes 91 are arranged in a one-to-one correspondence with the feed pads 12, the first vertical interconnection metallized via holes 91 penetrate through the radiation unit layer 10 to the first radio frequency circuit layer 30, one end of each first vertical interconnection metallized via hole 91 is electrically connected with the feed pad 12, and the other end of each first vertical interconnection metallized via hole 91 is electrically connected with the branch end 312 of one N power division feeder line 31.

It will be appreciated that in order to avoid the first vertical interconnect metallization via 91 being electrically connected to the lines of the second layer 81, the power plane layer 70, the third layer 82, the control signal layer 60 and the fourth layer 83, the second layer 81, the power plane layer 70, the third layer 82, the control signal layer 60 and the fourth layer 83 are provided with first anti-pads 92 circumferentially arranged around the first vertical interconnect metallization via 91.

Further, the multilayer circuit board is further provided with a number of second vertical interconnect metallization vias 93. The second vertical interconnection metallization via 93 penetrates from the first radio frequency circuit layer 30 to the second radio frequency circuit layer 50, one end of the second vertical interconnection metallization via 93 is electrically connected with the combined end 311 of the N-power division feeder line 31, and the other end of the second vertical interconnection metallization via 93 is electrically connected with the first radio frequency signal input/output pin 21.

It will be appreciated that in order to avoid the second vertical interconnect metallization via 93 being electrically connected to the ground plane of the first formation 40, a second anti-pad 94 is provided on the first formation 40 circumferentially disposed around the second vertical interconnect metallization via 93.

Further, the multilayer circuit board is also provided with a third vertical interconnect metallization via 95. The third vertical interconnection metallization via 95 penetrates from the second ground layer 81 to the second radio frequency circuit layer 50, one end of the third vertical interconnection metallization via 95 is electrically connected to the control circuit 61, and the other end of the third vertical interconnection metallization via 95 is electrically connected to the control pin 24.

It will be appreciated that in order to avoid the third vertical interconnect metallization via 95 being electrically connected to the lines of the second ground layer 81, the power plane layer 70, the third ground layer 82, the fourth ground layer 83, the first radio frequency line layer 30 and the first ground layer 40, the second ground layer 81, the power plane layer 70, the third ground layer 82, the fourth ground layer 83, the first radio frequency line layer 30 and the first ground layer 40 are provided with third antipads 96 circumferentially disposed around the third vertical interconnect metallization via 95.

Further, the multi-layer circuit board is further provided with a plurality of fourth vertical interconnection metallized vias 97, the fourth vertical interconnection metallized vias 97 penetrate through the second ground layer 81 to the second radio frequency circuit layer 50, and the power plane 71 of the power plane layer 70 is electrically connected to the ground pins 23 through the fourth vertical interconnection metallized vias 97.

Referring to fig. 5 to 9, it can be understood that, in order to avoid the fourth vertical interconnection metallization via 97 from electrically connecting with the circuits of the second layer 81, the third layer 82, the control signal layer 60, the fourth layer 83 and the first layer 40, the second layer 81, the third layer 82, the fourth layer 83 and the first layer 40 are all provided with fourth anti-pads 98 circumferentially disposed around the fourth vertical interconnection metallization via 97.

Referring to fig. 5 to 9, the number of the fourth vertical interconnect metallization vias 97 is not limited, and may be, for example, one, two, three, four or other numbers, four being illustrated in the present embodiment. Further, the second ground layer 81, the third ground layer 82, the control signal layer 60, the fourth ground layer 83, the first rf circuit layer 30 and the first ground layer 40 are all provided with a first power plane 981, and the fourth vertical interconnect metallization via 97 is electrically connected to the first power plane 981. Wherein the second formation 81, the third formation 82, the fourth formation 83, and the fourth anti-pad 98 on the first formation 40 are circumferentially disposed about the first power plane 981. In this way, the first power plane 981 is capable of achieving electrical conduction between the four fourth vertical interconnect metallization vias 97, thereby enabling benign conduction between the power plane 71 and the power pins 25 of the beamforming chip 20.

Further, the multi-layer circuit board is further provided with a plurality of fifth vertical interconnection metallized vias 991 and a plurality of sixth vertical interconnection metallized vias 992. The fifth vertical interconnect metallization via 991 is penetrated by the second ground layer 81 to the first radio frequency wiring layer 30, the sixth vertical interconnect metallization via 992 is penetrated by the first radio frequency wiring layer 30 to the second radio frequency wiring layer 50, and the fifth vertical interconnect metallization via 991 is electrically connected with the sixth vertical interconnect metallization via 992. The first layer 40, the second layer 81, the third layer 82 and the fourth layer 83 are all electrically connected to each other through a fifth vertical interconnect metallization via 991, and a sixth vertical interconnect metallization via 992 is electrically connected to the ground pin 23.

It will be appreciated that, in order to avoid the fifth vertical interconnect metallization via 991 from electrically connecting with the power plane layer 70 and the circuitry of the control signal layer 60, optionally, a fifth anti-pad 995 is provided on the power plane layer 70 and the control signal layer 60, which is circumferentially disposed around the fifth vertical interconnect metallization via 991. Of course, the fifth anti-pad 995 may not be provided, as long as the fifth vertical interconnect metallization via 991 is avoided from the circuits of the power plane layer 70 and the control signal layer 60 when passing through the circuits of the power plane layer 70 and the control signal layer 60.

Referring to fig. 2 and 5-8, in one embodiment, a plurality of spaced apart fifth vertical interconnect metallization vias 991 are wrapped around the periphery of the first vertical interconnect metallization via 91.

Further, the power plane layers 70 are each provided with a second power plane 996, and the fifth vertical interconnection metallized via 991 is electrically connected to the second power plane 996. Wherein the fifth anti-pad 995 is circumferentially disposed about the second power plane 996 such that the second power plane 996 is spaced apart from the power plane 71. In this way, the second power plane 996 can realize the mutual electrical conduction between the five fifth vertical interconnection metallized vias 991, so that benign conduction between the fifth vertical interconnection metallized vias 991 and the ground pin 23 of the beam forming chip 20 can be realized. The control signal layer 60 may be provided with a power supply surface similarly, and will not be described in detail.

Referring to fig. 2, 9 and 10, fig. 10 is a schematic structural diagram of a second radio frequency circuit layer 50 of a millimeter wave package antenna according to an embodiment of the invention. The periphery of the second vertical interconnect metallization via 93 is surrounded by a plurality of spaced sixth vertical interconnect metallization vias 992. Fourth vertical interconnect metallization via 97 and sixth vertical interconnect metallization via 992.

In this way, the first vertical interconnection metallized via 91 and the peripheral thereof are wound with the plurality of spaced fifth vertical interconnection metallized vias 991, the second vertical interconnection metallized via 93 and the peripheral thereof are wound with the plurality of spaced sixth vertical interconnection metallized vias 992, which are equivalent to coaxial cables, and the signal transmission is more stable.

The number of the fifth vertical interconnect metallization vias 991 around the periphery of the first vertical interconnect metallization via 91 is 5, but may be other numbers, and is not limited thereto. The sixth vertical interconnect metallization via 992, which is illustrated as being around the periphery of the second vertical interconnect metallization via 93, is 4, but may be other numbers, and is not limited thereto.

Referring to fig. 2, 9 and 10, the second rf circuit layer 50 is provided with a microstrip line 127 or a GCPW transmission line, and the microstrip line 127 is taken as an example for illustration. Microstrip line 127 is used to interconnect first rf signal input output pin 21 with second vertical interconnect metallization via 93. Specifically, four microstrip lines 127 electrically connect the four first rf signal input/output pins 21 with the four second vertical interconnect metallization vias 93. In order to achieve phase consistency of each feed, the lengths of the four microstrip lines 127 are required to be equal.

Referring to fig. 2 again, in one embodiment, the multi-layer circuit board is further provided with a first-level metallization via 993, the first-level metallization via 993 penetrates from the first layer 40 to the second radio frequency circuit layer 50, and the first layer 40 is electrically connected to the ground pin 23 through the first-level metallization via 993.

In one embodiment, the vertical via size of the first vertical interconnect metallization via 91, the size of the first anti-pad 92, require the use of electromagnetic simulation tools to accomplish the optimal design.

Referring again to fig. 2 and 4, in one embodiment, the multi-layer circuit board further includes a metal-free wiring layer 994. The metal-free wiring layer 994 is located between the radiating element layer 10 and the second ground layer 81. As such, a metal-free wiring layer 994 is added between the radiating element layer 10 and the second formation 81 in order to increase the distance between the radiating element layer 10 and the second formation 81, i.e., to increase the height of the reference formation of the radiating element layer 10.

Referring to fig. 2, 4 and 7, further, the metal-free wiring layer 994 is two layers, the control signal layer 60 is two layers, and high-frequency dielectric materials are disposed between adjacent layers of the radiating unit layer 10, the metal-free wiring layer 994, the second ground layer 81, the power plane layer 70, the third ground layer 82, the control signal layer 60, the fourth ground layer 83, the first rf circuit layer 30, the first ground layer 40 and the second rf circuit layer 50. Therefore, the top surface and the bottom surface of the multilayer circuit board are of symmetrical structures, the defect of warping can be avoided during lamination processing, and the product quality is ensured.

Referring to fig. 2, more specifically, 11 layers of high-frequency dielectric materials between adjacent layers of the radiation unit layer 10 and the second radio frequency circuit layer 50 are respectively and sequentially referred to as a first dielectric layer 101, a second dielectric layer 102, a third dielectric layer 103, a fourth dielectric layer 104, a fifth dielectric layer 105, a sixth dielectric layer 106, a seventh dielectric layer 107, an eighth dielectric layer 108, a ninth dielectric layer 109, a tenth dielectric layer 110 and an eleventh dielectric layer 111. Wherein the thickness of the first dielectric layer 101 is the same as the thickness of the eleventh dielectric layer 111, for example, 3mil; the thickness of the second dielectric layer 102 is the same as the thickness of the tenth dielectric layer 110, for example 3mil; the thickness of the third dielectric layer 103 is the same as that of the ninth dielectric layer 109, for example, 30mil; the fourth dielectric layer 104 has the same thickness as the eighth dielectric layer 108, for example, 3mil; the thickness of the fifth dielectric layer 105 is the same as that of the seventh dielectric layer 107, for example, 4mil; the thickness of the sixth dielectric layer 106 is, for example, 3mil.

Referring to fig. 2, specifically, the third dielectric layer 103 to the first radio frequency circuit layer 30 may be manufactured by an HDI process, and then the third vertical interconnection metallization via 95, the fourth vertical interconnection metallization via 97 and the fifth vertical interconnection metallization via 991 in the third dielectric layer 103 may be removed by a back drilling process, so that the remaining layers remain, and the hole wall metal layers of the third vertical interconnection metallization via 95, the fourth vertical interconnection metallization via 97 and the fifth vertical interconnection metallization via 991 in the third dielectric layer 103 may be prevented from affecting the radiation performance of the radiation unit layer 10.

Referring to fig. 11 to 12, fig. 11 is a schematic structural diagram of a radiating element layer 10 of an array antenna according to an embodiment of the invention; fig. 12 is a schematic diagram of a structure in which the second rf signal input/output pin 22 is connected to the power division feeding network in the array antenna according to an embodiment of the present invention.

In one embodiment, when the millimeter wave package antenna is manufactured by using the LTCC process, since whether the millimeter wave package antenna is of a symmetrical structure is not required in the manufacturing process of the LTCC process, and no metal wiring layer 994 is required to be disposed between the radiating element layer 10 and the second ground layer 81, the manufacturing process of the LTCC process can also ensure that the millimeter wave package antenna has better flatness. Of course, the metal-free wiring layer 994 may be disposed between the radiation element layer 10 and the second layer 81, and when two metal-free wiring layers 994 are disposed, the two metal-free wiring layers 994 are disposed adjacently above each other.

In one embodiment, the third formation 82 need not be disposed between the power plane layer 70 and the control signal layer 60.

In one embodiment, the control signal layer 60 may be a single layer and may be manufactured using LTCC processing, i.e., without designing the control signal layer 60 as two layers as in fig. 2. When the control signal layer 60 is two layers, the two control signal layers 60 are disposed adjacently above and below.

In one embodiment, an array antenna comprises more than two millimeter wave package antennas of any of the above embodiments.

When the array antenna and the beam forming chip 20 are in operation, an external device sends an antenna signal to the beam forming chip 20 through the second radio frequency circuit layer 50 and the second radio frequency signal input/output pin 22 of the beam forming chip 20, and inputs a radio frequency signal to the first radio frequency circuit layer 30 through the first radio frequency signal input/output pin 21 of the beam forming chip 20, and the radio frequency signal is transmitted to the radiation unit layer 10 through the first radio frequency circuit layer 30. In addition, the antenna signal received by the radiation unit layer 10 may also enter the beam forming chip 20 through the first rf signal input/output pin 21, be output to the second rf circuit layer 50 through the second rf signal input/output pin 22 of the beam forming chip 20, and be fed back to an external device through the second rf circuit layer 50. Thus, the radio frequency signal input and output of the radiation unit layer 10 of the multi-layer circuit board with the HDI design can be realized, and the multi-layer circuit board can be suitable for the production and manufacture of the HDI technology with mature technology, thereby having low cost, small volume and light weight.

Referring to fig. 3 and 11, further, the present embodiment employs a one-drive-two-subarray unit (as shown by the dashed box P in fig. 11) to form an 8×16 array antenna. The whole array antenna is rectangular, the long side of the array antenna is L1 as shown in fig. 11, the length of L1 is 80mm, for example, and the short side of the array antenna is L2 as shown in fig. 11, and the length of L2 is 40mm, for example. According to 3D electromagnetic simulation, the pitching wave beam direction of the array antenna can reach +/-15 degrees, and the azimuth wave beam direction can reach +/-60 degrees.

Referring to fig. 11 and 12, further, when the present embodiment adopts a two-drive sub-array unit to form an 8×16 array antenna, the second rf circuit layer 50 of the array antenna is correspondingly provided with a sixteen-power-division feeding network 121. The sixteen-power-division feed network 121 may be implemented in a cascade manner using, for example, classical wilkinson power-division units. The output of the sixteen-power-division feed network 121 is connected to the second rf signal input/output pin 22 of the beam forming chip 20. Each polarization direction employs 16 beamforming chips 20. In addition, the rf feed 123 of the feed network 121 may be interconnected with other PCBs of the external device by an SMP socket (not shown in the figure), so as to realize feeding and signal receiving to the radiating element layer 10.

Referring to fig. 12 and 13, fig. 13 is a schematic diagram illustrating an arrangement structure of a plurality of beamforming chips 20 in an array antenna according to an embodiment of the invention. A digital multi-pin socket 124 is further disposed in the second radio frequency circuit layer 50, and a plurality of connection pads 125 are disposed on the digital multi-pin socket 124. The internal control traces (see fig. 7) are electrically connected to the connection pads 125 through, for example, daisy chain wiring (see fig. 13 for schematic drawing) through vertical interconnect metallization vias. Through the digital multi-pin socket 124, interconnection with other PCBs of external devices can be realized, so that functions of power supply, logic control and the like of the antenna module are realized.

Fig. 13 illustrates a classical daisy chain wiring interconnect schematic. S3 is the distance between adjacent beamforming chips 20 in the wiring; s4 is the distance of the daisy chain main line 126 to the control pins 24 of the beam forming chip 20, which is as short as possible, improving signal integrity. In the design of the multi-layer circuit board of this embodiment, since the clock rate of the control signal is high (90 MHz), the daisy-chain wiring adopts a series-four structure as shown in fig. 13, for example, in order to avoid the problem of signal integrity. Note that the daisy chain main line 126 is a projection of the control line 61 on the second radio frequency line layer 50.

The simulation performance of the monopole millimeter wave phased active array antenna of the embodiment is shown in the following table:

8 x 16 single polarization active phased array antenna performance

The monopole phased array antenna has the advantages of wide bandwidth, low cost, small volume, light weight and mature process, and can meet the large-scale market demand of 5G millimeter wave communication equipment. Fig. 3 to 12 of the present embodiment illustrate a single-polarized array formed by a single-driven two-array unit, but may be a single-driven one-driven three-array unit, a single-driven four-array unit, or a single-driven other-array unit, which is not limited herein.

The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.

In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.

In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.

Claims

1. A millimeter wave package antenna, comprising a multilayer circuit board, the multilayer circuit board comprising:

The radiating unit layer is provided with a plurality of radiating oscillator pieces, two feed plates are arranged corresponding to each radiating oscillator piece, the two feed plates are oppositely arranged on the periphery of the radiating oscillator piece, and a connecting line of the centers of the two feed plates passes through the center of the radiating oscillator piece;

the beam forming chip is provided with a first radio frequency signal input/output pin, a second radio frequency signal input/output pin and a grounding pin;

The high-frequency dielectric material is arranged between the first stratum and the second radio frequency circuit layer; the first radio frequency circuit layer comprises a N-division power division feeder, the first radio frequency signal input/output pin is electrically connected to a combining end of the N-division power division feeder, and a plurality of branch ends of the N-division power division feeder are respectively and correspondingly electrically connected with a plurality of feed disks; the first stratum is electrically connected with the grounding pin, and the second radio frequency signal input/output pin is electrically connected to the second radio frequency circuit layer.

2. The millimeter wave package antenna of claim 1, wherein said multilayer circuit board further comprises a control signal layer, said control signal layer having a control circuit, said beam forming chip further having a control pin, said control pin electrically connected to said control circuit.

3. The millimeter-wave package antenna of claim 2, wherein said multilayer circuit board further comprises a power plane layer; the beam forming chip is also provided with a power pin, and the power pin is electrically connected with the power plane of the power plane layer.

4. The millimeter wave package antenna of claim 3, wherein said multilayer circuit board further comprises a second layer, a third layer, and a fourth layer; the radiation unit layer, the second stratum, the power plane layer, the third stratum, the control signal layer, the fourth stratum, the first radio frequency circuit layer, the first stratum and the second radio frequency circuit layer are sequentially stacked from top to bottom; the beam forming chip is arranged on the second radio frequency circuit layer.

5. The millimeter wave package antenna according to claim 4, wherein the multilayer circuit board is provided with a plurality of first vertical interconnection metallized vias, the plurality of first vertical interconnection metallized vias are arranged in one-to-one correspondence with the plurality of feed pads, the first vertical interconnection metallized vias penetrate through the first radio frequency circuit layer from the radiating element layer, one end of the first vertical interconnection metallized vias is electrically connected with the feed pads, and the other end of the first vertical interconnection metallized vias is electrically connected with branch ends of the N power division feeder lines;

6. The millimeter wave package antenna of claim 5, wherein a periphery of said first vertical interconnect metallization via is surrounded by a plurality of spaced apart fifth vertical interconnect metallization vias and a periphery of said second vertical interconnect metallization via is surrounded by a plurality of spaced apart sixth vertical interconnect metallization vias.

7. The millimeter wave package antenna of claim 5, wherein said multilayer circuit board is further provided with a first-order metallized via, said first-order metallized via extending from said first ground layer to said second radio frequency circuit layer, said first ground layer being electrically connected to said ground pin through said first-order metallized via.

8. The millimeter-wave package antenna of claim 4, wherein said multilayer circuit board further comprises a metal-free wiring layer located between said radiating element layer and said second ground layer.

9. The millimeter wave package antenna of claim 8, wherein said metal-free wiring layer is two layers, said control signal layer is two layers, and each adjacent layer of said radiating element layer, said metal-free wiring layer, said second ground layer, said power plane layer, said third ground layer, said control signal layer, said fourth ground layer, said first radio frequency circuit layer, said first ground layer, and said second radio frequency circuit layer is provided with a high frequency dielectric material therebetween.

10. An array antenna comprising two or more millimeter wave package antennas according to any one of claims 1 to 9.