CN112701189A - 一种光探测器及制备方法 - Google Patents
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- 238000000034 method Methods 0.000 claims abstract description 21
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Abstract
本发明公开了一种光探测器及制备方法，探测器包括WSe2薄膜材料、ZnTe薄膜材料、n‑Si基底和金属电极；所述的n‑Si基底上生长WSe2薄膜，WSe2薄膜上生长ZnTe薄膜，n‑Si基底、ZnTe薄膜表面分别生长金属电极。本发明制备的光探测器，以n型硅为基底，与集成电路工艺兼容；具有厚度薄、光响应快、可探测黄绿光到近红外波段光的优点。
Description
技术领域
本发明属于器件制备领域，具体涉及一种硅(Si)、硒化钨(WSe2)、碲化锌(ZnTe)作为光电转换材料的可见光、近红外光区域的光电探测器。
背景技术
光电探测器件是能将入射光信号转变成电信号的器件。可探测不同波长的光辐射，用于成像、工业自动化控制、移动物体的跟踪和控制等领域。
硒化钨(WSe2)、碲化锌(ZnTe)是P型半导体材料，与n型硅(n-Si)半导体材料可以形成p-n结，由于三者材料的禁带宽度(Eg)分别约为1.3eV(WSe2)、2.25eV(ZnTe)、1.1eV(Si)，处于可见光和近红外光区域，因此，可以实现可见光与近红外光的探测，探测波长范围约为550-1200nm。
发明内容
本发明针对现有技术的不足，提出了一种光探测器及制备方法。
一种光探测器，包括WSe2薄膜材料、ZnTe薄膜材料、n-Si基底和金属电极；所述的n-Si基底上生长WSe2薄膜，WSe2薄膜上生长ZnTe薄膜，n-Si基底、ZnTe薄膜表面分别生长金属电极。
一种光探测器的制备方法，该方法具体包括以下步骤：
步骤(1).通过化学气相沉积法在n-Si基底表面生长单原子层至10nm厚度的WSe2薄膜；
WSe2固体粉末1～5g，装入石英舟中并放入电炉中的石英管内；石英舟放置在石英管的中间位置；将n-Si基底，用去离子水清洗后氮气吹干，覆盖在石英舟的上面；向石英管中输入载气氩氢混合气，其中氢气的体积含量为5％，载气流量为100sccm；将石英管升温至500～1000℃，升温速率为20～30℃/min；温度升至500～1000℃后保温，保温时间为10～120min；之后将石英管快速冷却到室温，冷却速率为50～100℃/min，然后取出基底，在n-Si基底上获得WS2薄膜，厚度为单原子层至10nm；
步骤(2).在氩气作为保护气氛下，通过磁控溅射法在步骤(1)产物n-Si/WSe2薄膜表面沉积ZnTe薄膜，薄膜厚度20-50nm；溅射靶材为ZnTe，通过该步骤，产物为n-Si/WSe2/ZnTe叠层结构；
步骤(3).在n-Si/WSe2/ZnTe表面沉积金属电极；
通过热蒸发设备，将金属蒸镀到薄膜表面；其中n-Si表面蒸镀金属铝电极，ZnTe表面通过模板蒸镀金电极；形成Al/n-Si/WSe2/ZnTe/Au叠层结构；金属电极厚度20-50nm。
作为优选，所述的石英管内径为1英寸。
作为优选，所述的n-Si基底尺寸为2.5～3.5cm×1.5～2.0cm。
作为优选，步骤(1)所述WS2固体粉末替换为氧化钨和硒。
作为优选，所述磁控溅射为制备薄膜的常用设备。
本发明相对于现有技术具有的效果：本发明制备的光探测器，以n型硅为基底，与集成电路工艺兼容；具有厚度薄、光响应快、可探测黄绿光到近红外波段光的优点。
附图说明
图1为本发明的结构示意图。
具体实施方式
如图1所示，一种光探测器，包括WSe2薄膜材料、ZnTe薄膜材料、n-Si基底和金属电极；所述的n-Si基底4上生长WSe2薄膜3，WSe2薄膜上生长ZnTe薄膜2，n-Si基底蒸镀金属铝电极5、ZnTe薄膜表面蒸镀金电极1。
实施例一：一种光探测器的制备方法，该方法具体包括以下步骤：
步骤(1).通过化学气相沉积法在n-Si基底表面生长单原子层至10nm厚度的WSe2薄膜；
WSe2固体粉末1g，装入石英舟中并放入电炉中的石英管内，所述的石英管内径为1英寸；石英舟放置在石英管的中间位置；将n-Si基底，用去离子水清洗后氮气吹干，覆盖在石英舟的上面，所述的n-Si基底尺寸为2.5cm×2.0cm；向石英管中输入载气氩氢混合气，其中氢气的体积含量为5％，载气流量为100sccm；将石英管升温至500℃，升温速率为20℃/min；温度升至500℃后保温，保温时间为10min；之后将石英管快速冷却到室温，冷却速率为50℃/min，然后取出基底，在n-Si基底上获得WS2薄膜，厚度为单2nm；
步骤(2).在氩气作为保护气氛下，通过磁控溅射法在步骤(1)产物n-Si/WSe2薄膜表面沉积ZnTe薄膜，薄膜厚度20nm；溅射靶材为ZnTe，通过该步骤，产物为n-Si/WSe2/ZnTe叠层结构；
步骤(3).在n-Si/WSe2/ZnTe表面沉积金属电极；
通过热蒸发设备，将金属蒸镀到薄膜表面；其中n-Si表面蒸镀金属铝电极，ZnTe表面通过模板蒸镀金电极；形成Al/n-Si/WSe2/ZnTe/Au叠层结构；金属电极厚度20nm。
实施例二：一种光探测器的制备方法，该方法具体包括以下步骤：
步骤(1).通过化学气相沉积法在n-Si基底表面生长单原子层至10nm厚度的WSe2薄膜；
WSe2固体粉末5g，装入石英舟中并放入电炉中的石英管内，所述的石英管内径为1英寸；石英舟放置在石英管的中间位置；将n-Si基底，用去离子水清洗后氮气吹干，覆盖在石英舟的上面，所述的n-Si基底尺寸为3.5cm×2.0cm；向石英管中输入载气氩氢混合气，其中氢气的体积含量为5％，载气流量为100sccm；将石英管升温至1000℃，升温速率为30℃/min；温度升至1000℃后保温，保温时间为120min；之后将石英管快速冷却到室温，冷却速率为100℃/min，然后取出基底，在n-Si基底上获得WS2薄膜，厚度为10nm；
步骤(2).在氩气作为保护气氛下，通过磁控溅射法在步骤(1)产物n-Si/WSe2薄膜表面沉积ZnTe薄膜，薄膜厚度50nm；溅射靶材为ZnTe，通过该步骤，产物为n-Si/WSe2/ZnTe叠层结构；
步骤(3).在n-Si/WSe2/ZnTe表面沉积金属电极；
通过热蒸发设备，将金属蒸镀到薄膜表面；其中n-Si表面蒸镀金属铝电极，ZnTe表面通过模板蒸镀金电极；形成Al/n-Si/WSe2/ZnTe/Au叠层结构；金属电极厚度40nm。
实施例三：一种光探测器的制备方法，该方法具体包括以下步骤：
步骤(1).通过化学气相沉积法在n-Si基底表面生长单原子层至10nm厚度的WSe2薄膜；
WSe2固体粉末3g，装入石英舟中并放入电炉中的石英管内，所述的石英管内径为1英寸；石英舟放置在石英管的中间位置；将n-Si基底，用去离子水清洗后氮气吹干，覆盖在石英舟的上面，所述的n-Si基底尺寸为3cm×2.0cm；向石英管中输入载气氩氢混合气，其中氢气的体积含量为5％，载气流量为100sccm；将石英管升温至800℃，升温速率为26℃/min；温度升至800℃后保温，保温时间为80min；之后将石英管快速冷却到室温，冷却速率为60℃/min，然后取出基底，在n-Si基底上获得WS2薄膜，厚度为5nm；
步骤(2).在氩气作为保护气氛下，通过磁控溅射法在步骤(1)产物n-Si/WSe2薄膜表面沉积ZnTe薄膜，薄膜厚度30nm；溅射靶材为ZnTe，通过该步骤，产物为n-Si/WSe2/ZnTe叠层结构；
步骤(3).在n-Si/WSe2/ZnTe表面沉积金属电极；
通过热蒸发设备，将金属蒸镀到薄膜表面；其中n-Si表面蒸镀金属铝电极，ZnTe表面通过模板蒸镀金电极；形成Al/n-Si/WSe2/ZnTe/Au叠层结构；金属电极厚度30nm。
Claims (6)
1.一种光探测器，其特征在于：包括WSe2薄膜材料、ZnTe薄膜材料、n-Si基底和金属电极；所述的n-Si基底上生长WSe2薄膜，WSe2薄膜上生长ZnTe薄膜，n-Si基底、ZnTe薄膜表面分别生长金属电极。
2.一种光探测器的制备方法，其特征在于，该方法具体包括以下步骤：
步骤(1).通过化学气相沉积法在n-Si基底表面生长单原子层至10nm厚度的WSe2薄膜；
WSe2固体粉末1～5g，装入石英舟中并放入电炉中的石英管内；石英舟放置在石英管的中间位置；将n-Si基底，用去离子水清洗后氮气吹干，覆盖在石英舟的上面；向石英管中输入载气氩氢混合气，其中氢气的体积含量为5％，载气流量为100sccm；将石英管升温至500～1000℃，升温速率为20～30℃/min；温度升至500～1000℃后保温，保温时间为10～120min；之后将石英管快速冷却到室温，冷却速率为50～100℃/min，然后取出基底，在n-Si基底上获得WS2薄膜，厚度为单原子层至10nm；
步骤(2).在氩气作为保护气氛下，通过磁控溅射法在步骤(1)产物n-Si/WSe2薄膜表面沉积ZnTe薄膜，薄膜厚度20-50nm；溅射靶材为ZnTe，通过该步骤，产物为n-Si/WSe2/ZnTe叠层结构；
步骤(3).在n-Si/WSe2/ZnTe表面沉积金属电极；
通过热蒸发设备，将金属蒸镀到薄膜表面；其中n-Si表面蒸镀金属铝电极，ZnTe表面通过模板蒸镀金电极；形成Al/n-Si/WSe2/ZnTe/Au叠层结构；金属电极厚度20-50nm。
3.根据权利要求1所述的一种光探测器的制备方法，其特征在于：所述的石英管内径为1英寸。
4.根据权利要求1所述的一种光探测器的制备方法，其特征在于：所述的n-Si基底尺寸为2.5～3.5cm×1.5～2.0cm。
5.根据权利要求1所述的一种光探测器的制备方法，其特征在于：步骤(1)所述WS2固体粉末替换为氧化钨和硒。
6.根据权利要求1所述的一种光探测器的制备方法，其特征在于：所述磁控溅射为制备薄膜的常用设备。
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