CN112679114A

CN112679114A - Single silver layer HTLE glass

Info

Publication number: CN112679114A
Application number: CN202110157190.8A
Authority: CN
Inventors: 叶宏
Original assignee: Individual
Current assignee: Individual
Priority date: 2020-11-18
Filing date: 2021-02-04
Publication date: 2021-04-20
Also published as: CN112250322A

Abstract

The invention provides single-silver-layer HTLE glass which comprises a toughened glass substrate (1), wherein a first film dielectric layer (2) is sequentially subjected to magnetron sputtering from inside to outside on the surface of the glass substrate (1); a second film layer protection layer (3); a third film layer functional layer (4); a fourth film protective layer (5); a fifth film dielectric layer (6) with a total of five films. The HTLE film formed by the five film layers only has one layer of silver (functional layer), and high structural strength, high visible light transmittance, low radiance and good heat insulation performance can be highly unified.

Description

Single silver layer HTLE glass

Technical Field

The invention relates to Low-emissivity glass, in particular to HTLE glass (High Transmittance and Low emissivity) with a single silver film layer.

Background

In recent years, to improve the thermal insulation effect, Low-emissivity (Low-e) hollow glass is generally used for one glass or two glass substrates to reduce the radiation heat transfer, and a Low-e film is positioned on the opposite side of the two glasses.

To achieve low emissivity of the glassIn general, on-line low-e glass or double silver layer low-e glass is used as the glass substrate. The on-line low-e glass is prepared by spraying chemical solution containing tin salt as main component onto hot glass surface to form single layer of tin oxide (SnO) with certain low radiation property₂) A compound film. The visible light transmittance of the on-line low-e glass is generally about 0.7, the film layer is firm and durable, and the main defects of the technology are as follows: the film material of the on-line low-e glass is semiconductor oxide, the infrared emissivity of the on-line low-e glass is about 0.2, and the emissivity of a common metal film (such as a silver film) is less than 0.1, so that the on-line low-e glass still has a space for improving the heat insulation performance; and (II) the toughening process of the on-line low-e glass is membrane-toughened, and the problems of color change, deformation and the like can be caused in the toughening process, so that the on-line low-e glass is not adopted in the all-toughened hollow glass, and the strength and the safety performance of the non-all-toughened hollow glass have certain defects. The double-silver-layer low-e hollow glass is generally coated with a double-silver multilayer film structure on the surface of the glass by adopting a magnetron sputtering coating process, wherein the low-e film structure is generally a glass substrate/medium/silver/shielding layer/medium, the emissivity of the low-e film is lower and is generally 0.05-0.1, but the visible light transmittance is lower and is generally 0.4-0.5 because the metal layer in the film structure is thicker.

Therefore, there is a strong need for a glass with high strength, high visible light transmittance, low emissivity and good heat-insulating property to meet the market demand.

Disclosure of Invention

The invention aims to provide single silver layer HTLE glass which has high strength, high visible light transmittance, low radiance and good heat insulation performance.

In order to solve the technical problems, the invention adopts the technical scheme that:

the single-silver-layer HTLE glass comprises a toughened glass substrate (1) and is characterized in that a first film dielectric layer (2) is magnetically sputtered on the surface of the glass substrate from inside to outside in sequence; a second film layer protection layer (3); a third film layer functional layer (4); a fourth film protective layer (5); a fifth film dielectric layer (6) with a total of five films.

As a limitation to the invention, the first film dielectric layer (2) of the five films is a zinc aluminum oxide film, a silicon nitride film or a titanium oxide film, the second film protective layer (3) is a nickel-chromium alloy film or a pure chromium film, the third film functional layer (4) is a silver-copper alloy film or a silver-aluminum alloy film, the fourth film protective layer (5) is a nickel-chromium alloy film or a pure chromium film, and the fifth film dielectric layer (6) is a zinc aluminum oxide film, a silicon nitride film or a titanium oxide film. Wherein the mass ratio of zinc oxide to aluminum oxide in the zinc-aluminum oxide film layer is 98:2, the mass fraction of silver in the silver-copper alloy or silver-aluminum alloy film layer is 90-95%, and the mass fraction of nickel in the nickel-chromium alloy film layer is 70-90%.

As a further limitation of the invention, the thickness of the first film layer dielectric layer (2) is 30-40 nm, the thickness of the second film layer protective layer (3) is 0.5-1.5 nm, the thickness of the third film layer functional layer (4) is 10-15 nm, the thickness of the fourth film layer protective layer (5) is 0.5-1.5 nm, and the thickness of the fifth film layer dielectric layer (6) is 30-40 nm.

After the technical scheme is adopted, the invention has the following advantages:

1. adopt toughened glass as the base plate, improved HTLE glass's structural strength effectively for glass is difficult broken, even can not drop the injury that causes the people after the breakage, has improved its security.

2. The coating layer is sputtered on the glass substrate by adopting a magnetron sputtering method, the binding force between the coating layer and the glass substrate is strong, and the coating layer is compact and uniform.

3. The stability of the doped aluminum oxide in the zinc oxide aluminum and the doped copper and aluminum in the silver-copper alloy or the silver-aluminum alloy are respectively superior to that of pure zinc oxide and silver, the prepared film layer has firm structure and stable property, and the protective layer in the HTLE film can also enhance the stability of the film layer, so the film layer can be popularized and applied under the condition of single-layer glass.

4. The HTLE film is of a single silver layer structure, the thickness of the silver alloy layer is about 10nm and is far lower than that of a double silver layer low-e structure (the sum of the thicknesses of two silver layers is more than 20nm), and the infrared reflectivity exceeding 90% can be provided, so that the low radiance is realized. The dielectric layers on the two sides of the protective layer can reduce the reflectivity of the film layer and improve the transmittance, so that the single silver layer structure can have high visible light transmittance and low radiance, the visible light transmittance of the glass of the HTLE film structure exceeds 0.65, and the radiance is less than 0.1.

5. The radiation heat exchange coefficient of the common glass and the room in room temperature environment is about 5.4W/(m)²K), reduced to 0.42W/(m) with HTLE glass²K). HTLE glass reduces radiant heat loss, improves the heat-insulating property of the glass and reduces energy consumption.

Therefore, the invention can realize the unification of high strength, high light transmittance, low radiance and good heat insulation performance of single-layer glass.

Drawings

Fig. 1 is a schematic structural view of single silver layer HTLE glass, which comprises a tempered glass substrate (1); a first film medium layer (2); a second film layer protection layer (3); a third film layer functional layer (4); a fourth film protective layer (5); and a fifth film medium layer (6) which is provided with five films in total.

Detailed Description

The invention will be further described in the following examples, but it is to be understood that these examples are for illustrative purposes only and are not to be construed as limiting the practice of the invention.

The present invention will be described in detail with reference to specific embodiments, but the technical solution of the present invention is not limited thereto.

Example 1

The method for preparing the single silver layer HTLE glass sequentially comprises the following steps:

1. cleaning and drying the glass substrate, and placing the glass substrate in a vacuum sputtering area;

2. depositing a zinc-aluminum oxide layer (2) on a glass substrate in a magnetron sputtering mode, wherein the target material is a zinc-aluminum oxide round target, the mass ratio of zinc oxide to aluminum oxide is 98:2, the power supply is a radio frequency power supply, the power is 150-250W, the process gas is pure argon, and the deposition is carried out at room temperature;

3. depositing a nickel-chromium alloy layer (3) on the zinc-aluminum oxide layer (2) in a magnetron sputtering mode, wherein the target material is a NiCr alloy round target, the mass fraction of nickel in the nickel-chromium alloy is 70-90%, the power supply is a direct-current power supply, the power is 150-250W, the process gas is pure argon, and the deposition is carried out at room temperature;

4. depositing a silver-copper alloy layer (4) on the nickel-chromium alloy layer (3) in a magnetron sputtering mode, wherein the target material is an AgCu alloy round target, the mass fraction of silver in the silver-copper alloy is 90-95%, the power supply is a direct-current power supply, the power is 150-250W, the process gas is pure argon gas, and the deposition is carried out at room temperature;

5. depositing a nickel-chromium alloy layer (5) on the silver-copper alloy layer (4) in a magnetron sputtering mode, wherein the target material is a NiCr alloy round target, the mass fraction of nickel in the nickel-chromium alloy is 70-90%, the power supply is a direct current power supply, the power is 150-250W, the process gas is pure argon, and the deposition is carried out at room temperature;

6. depositing a zinc oxide aluminum layer (6) on the nickel-chromium alloy layer (5) in a magnetron sputtering mode, wherein the used target material is a zinc oxide aluminum round target, the mass ratio of zinc oxide to aluminum oxide is 98:2, the power supply is a radio frequency power supply, the power is 150-250W, the process gas is pure argon, and the deposition is carried out at room temperature.

The detection results of the single five-layer film HTLE glass are as follows:

the first layer (2) of the five HTLE films is zinc aluminum oxide, and the thickness of the film layer is 30-40 nm; the second layer (3) is nickel-chromium alloy, the mass fraction of nickel in the nickel-chromium alloy is 70-90%, and the thickness of the film layer is 0.5-1.5 nm; the third layer (4) is made of silver-copper alloy, and the thickness of the film layer is 10-15 nm; the fourth layer (5) is nickel-chromium alloy, and the thickness of the film layer is 0.5-1.5 nm; the fifth layer (6) is zinc aluminum oxide, and the thickness of the film layer is 30-40 nm. The visible light transmittance of the HTLE glass was about 0.65 as measured by a spectrophotometer. The emissivity of the HTLE glass was measured to be about 0.07 using a fourier infrared spectrometer.

Example 2

2. depositing a silicon nitride layer (2) on a glass substrate in a magnetron sputtering mode, wherein the target material is a silicon nitride round target, the power supply is a radio frequency power supply, the power is 150-250W, the process gas is pure argon, and the deposition is carried out at room temperature;

3. depositing a nickel-chromium alloy layer (3) on the silicon nitride layer (2) in a magnetron sputtering mode, wherein the target material is a NiCr alloy round target, the mass fraction of nickel in the nickel-chromium alloy is 70-90%, the power supply is a direct-current power supply, the power is 150-250W, the process gas is pure argon, and the deposition is carried out at room temperature;

6. and depositing a silicon nitride layer (6) on the nichrome layer (5) in a magnetron sputtering mode, wherein the used target material is a silicon nitride round target, the power supply is a radio frequency power supply, the power is 150-250W, the process gas is pure argon, and the deposition is carried out at room temperature.

The detection results of the single five-layer film HTLE glass are as follows:

the first layer (2) of the five HTLE films is silicon nitride, and the thickness of the film layer is 30-40 nm; the second layer (3) is nickel-chromium alloy, the mass fraction of nickel in the nickel-chromium alloy is 70-90%, and the thickness of the film layer is 0.5-1.5 nm; the third layer (4) is made of silver-copper alloy, and the thickness of the film layer is 10-15 nm; the fourth layer (5) is nickel-chromium alloy, and the thickness of the film layer is 0.5-1.5 nm; the fifth layer (6) is silicon nitride, and the thickness of the film layer is 30-40 nm. The visible light transmittance of the HTLE glass was measured by a spectrophotometer to be about 0.68. The emissivity of the HTLE glass was measured to be about 0.07 using a fourier infrared spectrometer.

Example 3

2. depositing a titanium oxide layer (2) on a glass substrate in a magnetron sputtering mode, wherein the used target material is a titanium oxide round target, the power supply is a radio frequency power supply, the power is 150-250W, the process gas is pure argon, and the titanium oxide layer is deposited at room temperature;

3. depositing a pure chromium layer (3) on the titanium oxide layer (2) in a magnetron sputtering mode, wherein the used target material is a pure chromium round target, the power supply is a direct-current power supply, the power is 150-250W, the process gas is pure argon, and the pure chromium layer is deposited at room temperature;

4. depositing a silver-copper alloy layer (4) on the pure chromium layer (3) in a magnetron sputtering mode, wherein the target material is an AgCu alloy round target, the power supply is a direct-current power supply, the power is 150-250W, the process gas is pure argon, and the deposition is carried out at room temperature;

5. depositing a pure chromium layer (5) on the silver-copper alloy layer (4) in a magnetron sputtering mode, wherein the used target material is a pure chromium round target, the power supply is a direct-current power supply, the power is 150-250W, the process gas is pure argon, and the pure chromium layer is deposited at room temperature;

6. depositing a titanium oxide layer (6) on the pure chromium layer (5) in a magnetron sputtering mode, wherein the used target material is a titanium oxide round target, the power supply is a radio frequency power supply, the power is 150-250W, the process gas is pure argon, and the deposition is carried out at room temperature.

The detection results of the single five-layer film HTLE glass are as follows:

the first layer (2) of the five HTLE films is titanium oxide, and the thickness of the film layer is 30-40 nm; the second layer (3) is a pure chromium film layer, and the thickness of the film layer is 0.5-1.5 nm; the third layer (4) is silver-aluminum alloy, and the thickness of the film layer is 10-15 nm; the fourth layer (5) is a pure chromium film layer, and the thickness of the film layer is 0.5-1.5 nm; the fifth layer (6) is titanium oxide, and the thickness of the film layer is 30-40 nm. The visible light transmittance of the HTLE glass was measured by a spectrophotometer to be about 0.69. The emissivity of the HTLE glass was measured to be about 0.07 using a fourier infrared spectrometer.

In conclusion, under the condition that single-layer glass is applied, the invention can adopt an HTLE five-layer film process, and realize the long-term stability of the product performance under the condition of ensuring low radiance and high light transmittance.

In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and equivalent changes and modifications made according to the content of the claims of the present invention should be considered as the technical scope of the present invention.

Claims

1. The single-silver-layer HTLE glass comprises a toughened glass substrate (1) and is characterized in that a first film dielectric layer (2) is magnetically sputtered on the surface of the glass substrate from inside to outside in sequence; a second film layer protection layer (3); a third film layer functional layer (4); a fourth film protective layer (5); a fifth film dielectric layer (6) with a total of five films.

2. The single silver layer HTLE glass according to claim 1, wherein the first (2) of said five layers is a zinc aluminum oxide, silicon nitride or titanium oxide layer, the second (3) protective layer is a nickel-chromium alloy or pure chromium layer, the third (4) functional layer is a silver-copper alloy or silver-aluminum alloy layer, the fourth (5) protective layer is a nickel-chromium alloy or pure chromium layer, and the fifth (6) dielectric layer is a zinc aluminum oxide, silicon nitride or titanium oxide layer.

3. The single-silver-layer HTLE glass according to claim 1, wherein the thickness of the first film dielectric layer (2) is 30-40 nm, the thickness of the second film protective layer (3) is 0.5-1.5 nm, the thickness of the third film functional layer (4) is 10-15 nm, the thickness of the fourth film protective layer (5) is 0.5-1.5 nm, and the thickness of the fifth film dielectric layer (6) is 30-40 nm.

4. The single silver layer HTLE glass according to claim 2, wherein the mass ratio of zinc oxide to aluminum oxide in said zinc-aluminum oxide film layer is 98:2, the mass fraction of silver in the silver-copper alloy or silver-aluminum alloy film layer is 90-95%, and the mass fraction of nickel in the nickel-chromium alloy film layer is 70-90%.